Study about the onset of intermediate valency in TmSe0.32Te0.68 under pressure (Englisch)
Nationallizenz
- Neue Suche nach: Boppart, H.
- Neue Suche nach: Rehwald, W.
- Neue Suche nach: Kaldis, E.
- Neue Suche nach: Wachter, P.
- Neue Suche nach: Boppart, H.
- Neue Suche nach: Rehwald, W.
- Neue Suche nach: Kaldis, E.
- Neue Suche nach: Wachter, P.
In:
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
;
117-118
;
573-575
;
1983
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Study about the onset of intermediate valency in TmSe0.32Te0.68 under pressure
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Beteiligte:Boppart, H. ( Autor:in ) / Rehwald, W. ( Autor:in ) / Kaldis, E. ( Autor:in ) / Wachter, P. ( Autor:in )
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Erschienen in:
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Verlag:
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Erscheinungsdatum:01.01.1983
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Format / Umfang:3 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 117-118
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- 5
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Opening addressBalkanski, M. et al. | 1983
- 561
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Static and structural properties of III–V zincblende semiconductorsFroyen, Sverre / Cohen, Marvin L. et al. | 1983
- 565
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Charge density anomalies in Si and InSb the high pressure transitionWeinstein, B.A. / Yoder-Short, D.R. / Colella, R. et al. | 1983
- 567
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Instabilities of polarons in high magnetic fieldsPeeters, F.M. / Devreese, J.T. et al. | 1983
- 570
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Phase transition and chaos in electrical avalenche breakdown caused by weak photoexcitation at 4.2 K in n-GaAsAoki, K. / Miyamae, K. / Kobayashi, T. / Yamamoto, K. et al. | 1983
- 573
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Study about the onset of intermediate valency in TmSe0.32Te0.68 under pressureBoppart, H. / Rehwald, W. / Kaldis, E. / Wachter, P. et al. | 1983
- 576
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Theory of electronic Raman scattering from N-KTaO3Katayama, S. et al. | 1983
- 579
-
Analytic calculation of the structural properties of semiconductorsMula, Gianni et al. | 1983
- 582
-
Direct observation of ferroelectric phase in Pb1−xSnxTeMöllmann, Klaus-Peter / Herrmann, Klaus H. / Enderlein, Rolf et al. | 1983
- 587
-
Generalized electronic susceptibility and charge density waves in transition metal dichalcogenidesSugai, Shunji et al. | 1983
- 590
-
Tunneling investigation of charge density wave energy gap in IT-TaS2Ozaki, H. / Mutoh, T. / Ohshima, H. / Okubora, A. / Yamagata, N. et al. | 1983
- 593
-
The electronic and magnetic properties of transition metal dichalcogenide intercalation complexesFriend, R.H. et al. | 1983
- 599
-
Non-linear conductivity of monoclinic TaS3Hasegawa, Katsuya / Maeda, Atsutaka / Uchida, Shin'ichi / Tanaka, Shōji et al. | 1983
- 602
-
Electronic transition under pressure in the two-dimensional purple bronze K0.9Mo6O17Dumas, J. / Escribe-Filippini, C. / Marcus, J. / Mercier, J. / Salomon, D. / Schlenker, C. / Razavi, F. et al. | 1983
- 605
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Shubnikov-de Haas oscillations in transition-metal pentatellurideYoshizaki, Ryozo / Izumi, Mitsuru / Harada, Shigeki / Uchinokura, Kunimitsu / Matsuura, Etsuyuki et al. | 1983
- 608
-
Transport and structural properties of the silver intercalation complexes of 2H-TaS2Boebinger, G.S. / Wakefield, N.I.F. / Marseglia, E.A. / Friend, R.H. / Tatlock, G.J. et al. | 1983
- 611
-
Electronic structures of higher stage graphite intercalation compoundsOhno, Takahisa / Kamimura, Hiroshi et al. | 1983
- 614
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Lattice dynamics of graphite intercalation compoundsBatallan, F. / Rosenman, I. / Simon, Ch. / Lauter, H. / Furdin, G. et al. | 1983
- 617
-
Optical transitions in oriented polyacetyleneBaeriswyl, D. / Harbeke, G. / Kiess, H. / Meier, E. / Meyer, W. et al. | 1983
- 620
-
Electronic properties of doped polyacetyleneAlbert, J.P. / Jouanin, C. et al. | 1983
- 623
-
UPS, XPS and auger spectroscopies of tetrathiotetracene (TTT) and bis (tetrathiotetracene)-triiodide (TTT2I3) organic semiconductor surfacesDelrue, J.P. / Boutique, J.P. / Riga, J. / Verbist, J.J. / Canivez, Y. / Laude, L.D. et al. | 1983
- 626
-
Transmission electron microscopy study of undoped and doped polyacetylene filmsRolland, Michel / Abadie, Marc J.M. et al. | 1983
- 631
-
Oscillations of the cyclotron resonance linewidth with landau level filling factor in GaAs/AlGaAs heterostructuresEnglert, Th. / Maan, J.C. / Uihlein, Ch. / Tsui, D.C. / Gossard, A.C. et al. | 1983
- 634
-
Electron mobility and landau level width in modulation-doped GaAs-AlxGa1−xAs heterojunctionsVoisin, P. / Guldner, Y. / Vieren, J.P. / Voos, M. / Maan, J.C. / Delescluse, P. / Linh, Nuyen T. et al. | 1983
- 637
-
Light scattering by two dimensional electron systemsPinczuk, A. / Worlock, J.M. et al. | 1983
- 643
-
Plasmons, intersubband resonance and localization in inversion layers with periodically structured gate electrodesBatke, E. / Heitmann, D. / Mohr, E.G. et al. | 1983
- 646
-
Plasmon excitation by coulomb scattering of electrons in 2D systemsHöpfel, R.A. / Gornik, E. / Gossard, A.C. / Wiegmann, W. et al. | 1983
- 649
-
Cyclotron resonance studies of polarons and screening effects in GaAsLindemann, G. / Seidenbusch, W. / Lassnig, R. / Edlinger, J. / Gornik, E. et al. | 1983
- 652
-
Magnetoresistance in Anderson-localized systemsKamimura, Hiroshi / Kurobe, Atsushi / Takemori, Tadashi et al. | 1983
- 655
-
Magnetoresistance of the 2-D impurity band in silicon inversion layersHartstein, A. / Fowler, A.B. / Woo, K.C. et al. | 1983
- 658
-
High electric field effect on negative magnetoresistance in Si (001) n-inversion layersKawaguchi, Yoichi / Kawaji, Shinji et al. | 1983
- 661
-
Transition from 1-dimensional to 2-dimensional hopping conductivity in silicon accumulation layersFowler, A.B. / Hartstein, A. / Webb, R.A. et al. | 1983
- 667
-
Nonmetallic localization and interaction in one-dimensional (0.1 μm) Si MOSFETsSkocpol, W.J. / Jackel, L.D. / Howard, R.E. / Hu, E.L. / Fetter, L.A. et al. | 1983
- 670
-
1-D minigaps in the subband structure of inversion layers on p-InSbEvelbauer, T. / Merkt, U. / Kotthaus, J.P. et al. | 1983
- 673
-
Non-ohmic conduction and weak localization in 1TTaS2Uchida, Shin-ichi / Tanaka, Shoji et al. | 1983
- 676
-
Magnetoresistance in weakly localized regimeFukuyama, Hidetoshi et al. | 1983
- 682
-
The quantum hall effectKlitzing, Klaus v. / Ebert, Günther et al. | 1983
- 688
-
Observation of quantized hall effect and vanishing resistance at fractional Landau level occupationStörmer, H.L. / Tsui, D.C. / Gossard, A.C. / Hwang, J.C.M. et al. | 1983
- 691
-
Electron localization and the quantized hall resistance in silicon inversion layersWakabayashi, J. / Myron, H.W. / Pepper, M. et al. | 1983
- 694
-
Metal-nonmetal transition and superconductivity in amorphous Si1−xAuxSystemYamaguchi, M. / Nishida, N. / Furubayashi, T. / Morigaki, K. / Ishimoto, H. / Ono, K. et al. | 1983
- 697
-
Loss of dimensionality, localisation and conductance oscillations in N-type GaAs FET'sPoole, D.A. / Pepper, M. / Myron, H.W. et al. | 1983
- 700
-
Electronic transport in metallic Ge:Sb at very low temperatureOotuka, Youiti / Kobayashi, Shun'ichi / Sasaki, Wataru et al. | 1983
- 703
-
Effect of tangential magnetic field on the two-dimensional electron transport in NAlGaAs/GaAs superlattices and hetero-interfacesSasaki, H. / Ohno, H. / Nishi, S. / Yoshino, J. et al. | 1983
- 706
-
Quantized hall and transverse resistivities in silicon MOS n-inversion layersYoshihiro, Kazuo / Kinoshita, Joji / Inagaki, Katsuya / Yamanouchi, Chikako / Moriyama, Jiro / Kawaji, Shinji et al. | 1983
- 711
-
Electric field-induced quenching of luminescence in quantum wellsMendez, E.E. / Bastard, G. / Chang, L.L. / Esaki, L. / Morkoc, H. / Fischer, R. et al. | 1983
- 714
-
Extrinsic photoluminescence from GaAs quantum wellsMiller, Robert C. / Gossard, Arthur C. / Tsang, Won T. et al. | 1983
- 717
-
Impurity photoluminescence in GaAs/Ga1−xAlxAs multiple quantum wellsLambert, B. / Deveaud, B. / Regreny, A. / Talalaeff, G. et al. | 1983
- 720
-
2D hot electron transport in a modulation-doped GaAs/AlGaAs interfaceNanbu, K. / Hiyamizu, S. / Inoue, M. / Hida, H. / Inayama, M. / Inuishi, Y. et al. | 1983
- 723
-
Electron transport in heterojunctions and superlatticesHess, K. et al. | 1983
- 729
-
Quantization of photo-excited carriers in GaAs doping superlatticesZeller, Ch. / Vinter, B. / Abstreiter, G. / Ploog, K. et al. | 1983
- 732
-
Time resolved luminescence in n-i-p-i doping superlatticesRehm, W. / Künzel, H. / Döhler, G.H. / Ploog, K. / Ruden, P. et al. | 1983
- 735
-
Electronic properties of InAsGaSb superlatticesGuldner, Y. et al. | 1983
- 741
-
GaSbAlSbInAs multi-heterojunctionsTakaoka, H. / Chang, Chin-An / Mendez, E.E. / Chang, L.L. / Esaki, L. et al. | 1983
- 744
-
Mobility in modulation doped GaAsGaAlAs superlatticesFishman, G. / Calecki, D. et al. | 1983
- 747
-
Electronic structure of semiconductor superlatticesAltarelli, M. et al. | 1983
- 750
-
Hot electron effects in heterolayersPrice, Peter J. et al. | 1983
- 753
-
Two dimensional magnetophonon resonance in GaInAsInP superlatticesBrummell, M.A. / Nicholas, R.J. / Portal, J.C. / Razeghi, M. / Poisson, M.A. et al. | 1983
- 756
-
Effect of free carrier screening on the electron mobility of GaAs: A study by field-effect measurementsWallis, R.H. et al. | 1983
- 761
-
Theory of semiconductor surface reconstruction: Si(111)-7×7, Si(111)-2×1, and GaAs(110)Pandey, K.C. et al. | 1983
- 767
-
Electronic structure and geometry of group IV semiconductor surfacesHimpsel, F.J. et al. | 1983
- 771
-
On the electronic structure of the Si(100)−2×1 surfacePollmann, J. / Mazur, A. / Schmeits, M. et al. | 1983
- 774
-
Pseudopotential total energy calculations for Si(111)-(1×1) and Si(111)-(2×1)Northrup, John E. / Cohen, Marvin L. et al. | 1983
- 777
-
SiH and SiOH electromodulation at SiSiO2 interfaces in a multiple internal reflectance configurationStella, A. / Miglio, L. / Palik, E.D. / Holm, R.T. / Hughes, H.L. et al. | 1983
- 779
-
Ion beam crystallography of the Si(111)-(7×7) and (1×1) surfacesTromp, R.M. / van Loenen, E.J. / Iwami, M. / Saris, F.W. et al. | 1983
- 781
-
Charge- and spin-density wave instabilities on ideal semiconductor surfacesMuramatsu, A. / Hanke, W. et al. | 1983
- 783
-
The diamond (111) surface: A dilemma resolvedPate, B.B. / Waclawski, B.J. / Stefan, P.M. / Binns, C. / Ohta, T. / Hecht, M.H. / Jupiter, P.J. / Shek, M.L. / Pierce, D.T. / Swanson, N. et al. | 1983
- 786
-
SEXAFS studies of adsorbate structure on Si and Ge surfacesCitrin, P.H. / Rowe, J.E. / Eisenberger, P. / Comin, F. et al. | 1983
- 789
-
Chemisorption and electronic charge transfer at ionic semiconductor surfacesGőpel, W. et al. | 1983
- 792
-
Intensity anomalies of auger electron signals observed by incident beam rocking method for Si(111)7 × 7 and Si(111)√3 ×√3Ag surfacesHorio, Yoshimi / Ichimiya, Ayahiko et al. | 1983
- 794
-
Exploiting photon energy dependence in photoemission from Si(111)-Mo interfaceRossi, G. / Abbati, I. / Braicovich, L. / Lindau, I. / Spicer, W.E. / del Pennino, U. / Nannarone, S. et al. | 1983
- 798
-
Theoretical study of the As(100) surface reconstruction of GaAsChadi, D.J. / Ihm, J. / Tanner, C. / Joannopoulos, J.D. et al. | 1983
- 801
-
Segregation of As on GaAs(110) surfaces observed immediately after cleavageBartels, F. / Clemens, H.J. / Mönch, W. et al. | 1983
- 804
-
Aspects of chemisorption in partially ionic semiconductorsCalandra, C. et al. | 1983
- 810
-
Electronic and vibronic excitations of semiconductor surfaces studied by electron energy loss spectroscopyLüth, Hans et al. | 1983
- 816
-
Electron states at abrupt metal-GaAs(110) interfacesBolmont, D. / Chen, P. / Mercier, V. / Sebenne, C.A. et al. | 1983
- 819
-
Core-level photoemission studies of MBE-grown semiconductor surfacesLudeke, R. / Chiang, T.-C. / Eastman, D.E. et al. | 1983
- 822
-
Core level binding energy shifts for reconstructed GaAs(001) surfacesvan der Veen, J.F. / Smit, L. / Larsen, P.K. / Neave, J.H. et al. | 1983
- 825
-
Surface effects on core electron binding energies of semiconductorsBechstedt, F. / Enderlein, R. / Reichardt, D. et al. | 1983
- 828
-
Theory of amplification and instabilities of surface polaritons in semiconductorsWallis, R.F. / Martin, B.G. / Quinn, J.J. et al. | 1983
- 831
-
An XPS study of silicon/noble metal interfaces: Bonding trends and correlations with the Schottky barrier heightsGrunthaner, P.J. / Grunthaner, F.J. / Madhukar, A. et al. | 1983
- 834
-
Formation of the Schottky barrier at the Pd/Si interfacePurtell, R.J. / Ho, P.S. / Rubloff, G.W. / Schmid, P.E. et al. | 1983
- 837
-
Electronic states and Schottky barriers at Pd2Si/Si(111) interfacesHerman, Frank / Casula, Francesco / Kasowski, Robert V. et al. | 1983
- 840
-
Electronic properties of gold-silicon (111) 7 × 7 interfacesHouzay, F. / Cros, A. / Salvan, F. / Derrien, J. / Guichar, G.M. / Pinchaux, R. et al. | 1983
- 843
-
Systematic study of 3d transition metal-silicon interfaces by photoemissionShiraki, Y. / Kobayashi, K.L.I. / Daimon, H. / Ishizuka, A. / Sugaki, S. / Murata, Y. et al. | 1983
- 846
-
Si-Metal interface reaction and bulk electronic structure of silicidesFranciosi, A. / Weaver, J.H. et al. | 1983
- 848
-
Photoemission studies of reactive diffusion and localized doping at II–VI compound semiconductor-metal interfacesStoffel, N.G. / Daniels, R. / Brillson, L.J. / Brucker, C.F. / Katnani, A. / Margaritondo, G. et al. | 1983
- 851
-
Stoichiometry effects on Schottky barrier and interface states in GaAs {001}/Al systemBarret, C. / Chekir, F. / Nefatti, T. / Vapaille, A. / Massies, J. et al. | 1983
- 854
-
The interaction of hydrogen with surface states on GaAs(100)Bringans, R.D. / Bachrach, R.Z. et al. | 1983
- 857
-
Observation of nonuniform energy band shifts for Ge on GaAs(110)Zurcher, P. / Anderson, J. / Frankel, D. / Lapeyre, G.J. et al. | 1983
- 860
-
GaAs Schottky diode barrier heights related to surface and interface statesPalau, J.M. / Ismaīl, A. / Testemale, E. / Lassabatère, L. et al. | 1983
- 865
-
Vibrational spectra of defect and alloy atom complexes in amorphous silicon filmsLucovsky, G. / Pollard, W.B. et al. | 1983
- 868
-
Infrared absorption spectra for B- and P-doped a-SiShen, S.C. / Jue, Q.L. et al. | 1983
- 871
-
Raman scattering from hydrogenated amorphous siliconLyon, S.A. / Nemanich, R.J. et al. | 1983
- 874
-
New silicon hydrogen infrared vibrational band associated to HSiCl configurations in an amorphous silicon matrix : Green's function theory approachChevallier, J. / Kalem, S. / Bourneix, J. / Vandevyver, M. et al. | 1983
- 877
-
Spatial charge fluctuations in amorphous siliconReichardt, J. / Johnson, R.L. / Ley, L. et al. | 1983
- 880
-
Structural order and optical properties of tetrahedral amorphous solidsMaley, N. / Pilione, L.J. / Kshirsagar, S.T. / Lannin, J.S. et al. | 1983
- 883
-
The effects of band bending on the photoconductivity in a-Si:HJackson, Warren B. / Thompson, Malcolm J. et al. | 1983
- 886
-
Boron and hydrogen bonding in B-doped a-Si:H — an NMR studyGreenbaum, S.G. / Carlos, W.E. / Taylor, P.C. et al. | 1983
- 889
-
Ultrafast relaxations of photogenerated carriers in amorphous semiconductorsTauc, Jan et al. | 1983
- 894
-
Carrier dynamics in optically illuminated a-Si:HKomuro, Shuji / Okamoto, Hiroaki / Hamakawa, Yoshihiro / Aoyagi, Yoshinobu / Segawa, Yusaburo / Namba, Susumu et al. | 1983
- 897
-
The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous siliconAmer, Nabil M. / Skumanich, Andrew / Jackson, Warren B. et al. | 1983
- 899
-
Distribution of recombination lifetimes in doped a-Si:HBiegelsen, David K. / Street, Robert A. / Jackson, Warren B. et al. | 1983
- 902
-
Kinetics of distant-pair recombination: Application to amorphous siliconDunstan, D.J. et al. | 1983
- 905
-
Reverse recovery properties of amorphous and crystalline Si-based pin diodesSilver, M. / Snow, E. / Giles, N.C. / Shaw, M.P. / Cannella, V. / Payson, S. / Ross, R. / Hudgens, S. et al. | 1983
- 908
-
Electronic properties of microcrystalline silicon prepared in the glow discharge plasmaSpear, W.E. / Willeke, G. / LeComber, P.G. et al. | 1983
- 914
-
Dependences of ESR and electrical properties on P doping ratio for microcrystalline SiHasegawa, Seiichi / Narikawa, Shiro / Kurata, Yoshihiro et al. | 1983
- 917
-
Plasma deposited microcrystalline and amorphous silicon — a comparative study of photoluminescenceLeComber, PG / Spear, WE / Bhat, PK / Diprose, G / Searle, TM / Austin, IG et al. | 1983
- 920
-
Efficient visible luminescence from hydrogenated amorphous siliconWolford, D.J. / Scott, B.A. / Reimer, J.A. / Bradley, J.A. et al. | 1983
- 923
-
Optically detected electron-nuclear double resonance in hydrogenated amorphous siliconSano, Y. / Morigaki, K. / Hirabayashi, I. et al. | 1983
- 926
-
Incorporation scheme of H reducing defects in a-Si studied by NMR and ESRShimizu, Tatsuo / Nakazawa, Kenji / Kumeda, Minoru / Ueda, Shoichi et al. | 1983
- 929
-
Recombination effects on transient photocurrent in a-Si:HMatsumoto, Nobuo / Kagawa, Toshiaki / Furukawa, Shoji et al. | 1983
- 932
-
Effective correlation energy of the dangling bond in amorphous siliconAdler, David / Shapiro, Finley R. et al. | 1983
- 935
-
Calculation of the infrared spectra of hydrogenated and fluorinated amorphous SiMartinez, E. / Yndurain, Felix et al. | 1983
- 938
-
Mechanism of impurity diffusion in a-Si:H and diffusion blocking by fluorine inclusionMatsumura, Hideki / Sakai, Kunihiro / Maeda, Masaaki / Furukawa, Seijiro et al. | 1983
- 941
-
Small angle neutron scattering study of structural heterogeneities in a-Si : HBellissent, R. / Chenevas-Paule, A. / Roth, M. et al. | 1983
- 944
-
Local structure and electronic states in hydrogenated amorphous siliconKramer, B. / King, H. / MacKinnon, A. et al. | 1983
- 947
-
Valence band structure of hydrogenated amorphous silicon-carbon alloys studied by photoelectron spectroscopyKatayama, Yoshifumi / Shimada, Toshikazu / Kobayashi, Keisuke L.I. / Jiang, Chang-gen / Daimon, Hiroshi / Murata, Yoshitada et al. | 1983
- 950
-
Amorphous to microcrystalline transitions in Si filmsBustarret, E. / Ranchoux, B. / Hamdi, H. / Deneuville, A. / Huant, S. / Depelsenaire, P. et al. | 1983
- 953
-
Metal-induced crystallization of hydrogenated amorphous Si filmsTsai, C.C. / Nemanich, R.J. / Thompson, M.J. / Stafford, B.L. et al. | 1983
- 959
-
Configurations of a chemically ordered continuous random network to describe the structure of GeSe2 glassNemanich, R.J. / Galeener, F.L. / Mikkelsen, J.C. Jr. / Connell, G.A.N. / Etherington, George / Wright, Adrian C. / Sinclair, Roger N. et al. | 1983
- 962
-
Investigation of large molecular fragments in glassy Ge1−x(Se, or S)xMurase, Kazuo / Fukunaga, Toshiaki / Tanaka, Yoichi / Yakushiji, Kazuyuki / Yunoki, Isamu et al. | 1983
- 965
-
Local structures of amorphous As-chalcogenide systems by means of high q-neutron scattering and infrared reflectionFukunaga, Toshiharu / Watanabe, Noboru / Arai, Toshihiro / Onari, Seinosuke / Kato, Michio / Mori, Tatsuo / Saegusa, Hiroaki / Yasuoka, Hiroshi / Hatori, Masami / Ohkawa, Katsumi et al. | 1983
- 968
-
Infrared spectroscopy of amorphous hydrogenated GaAs, GaP, GaSb: Evidence for GaHGa bridgesWang, Z.P. / Ley, L. / Cardona, M. et al. | 1983
- 971
-
Preservation of optical selection rules in an amorphous semiconductorBrodsky, M.H. / DiVincenzo, D.P. et al. | 1983
- 974
-
Electron-hole recombination in As2Se3Cavenett, B.C. / Depinna, S.P. / Lamb, W.E. et al. | 1983
- 977
-
Picosecond radiative and nonradiative processes in As2S3 glassKnox, W.H. / Nordlund, T.M. / Weinstein, B.A. / Orlowski, T.E. et al. | 1983
- 980
-
Luminescence, transient transport and photoconductivity in chalcogenide glassesNgai, K.L. / Murayama, Kazuro et al. | 1983
- 983
-
Photoabsorption in amorphous semiconductors using a wave guided CO2 laserZeldov, E. / Weiser, K. et al. | 1983
- 986
-
A thermophonic investigation of switching and memory phenomena in thick amorphous chalcogenide filmsKotz, J. / Shaw, M.P. et al. | 1983
- 989
-
Influence of impurities on the electrical properties of Se65Te35 glassesNagels, P. / Ali, M. / Rotti, M. et al. | 1983
- 992
-
Disorder and optical properties in gallium arsenidePaparoditis, C. / Rideau, A. / Monnom, G. / Gaucherel, Ph. et al. | 1983
- 995
-
The effect of charged additives on the mobility gap and thermal activation energy of As2Se3CuxSawan, Y. / El-Gabaly, M. / Kollias, N. et al. | 1983
- 998
-
Amorphous barium vanadates doped with transition metalsBogomolova, L.D. / Spasibkina, S.N. et al. | 1983
- 1001
-
The electrical conductivity of amorphous antimony and its dependence on film thicknessMackintosh, A.J. / Phillips, R.T. / Yoffe, A.D. et al. | 1983
- 1007
-
The properties of crystalline silicon under laser irradiationCar, R. / Selloni, A. / Janak, J.F. / Pantelides, S.T. et al. | 1983
- 1010
-
Pulsed laser annealing of semiconductors experimental facts and open questionsKurz, H. / Liu, J.M. / Bloembergen, N. et al. | 1983
- 1014
-
Instability of the electron-hole plasma in covalent semiconductorsCombescot, M. / Bok, J. et al. | 1983
- 1017
-
Prospective of application of laser, electron-beam and incoherent light processing to semiconductor technologyLietoila, Arto et al. | 1983
- 1021
-
Observation of a soret-dufour effect for laser-generated carriers in germaniumPreston, John S. / van Driel, Henry M. et al. | 1983
- 1024
-
Time-resolved optical measurement of Si lattice temperature during nanosecond pulsed laser annealingMurakami, Kouichi / Itoh, Hisayoshi / Takita, Kōki / Masuda, Kohzoh et al. | 1983
- 1027
-
Formation of AlSb by laser and capacity discharge annealingBaufay, L. / Andrew, R. / Pigeolet, A. / Laude, L.D. et al. | 1983
- 1030
-
CO2 laser oxidation of siliconBoyd, I.W. / Wilson, J.I.B. et al. | 1983
- 1035
-
Concluding remarksLa Guillaume, C.Benoit A et al. | 1983
- 1038
-
Closing addressBalkanski, M. et al. | 1983
- 1041
-
Author index to parts I and II| 1983
- ii
-
Editorial Board| 1983
- x
-
Committees and sponsors| 1983