IEEE Transactions on Electron Devices publication information (Englisch)
In:
IEEE Transactions on Electron Devices
;
67
, 3
;
C2
;
2020
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:IEEE Transactions on Electron Devices publication information
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Erschienen in:IEEE Transactions on Electron Devices ; 67, 3 ; C2
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.03.2020
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Format / Umfang:84424 byte
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 67, Ausgabe 3
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 773
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Changes in the Editorial BoardGhione, Giovanni et al. | 2020
- 777
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Curing of Aged Gate Dielectric by the Self-Heating Effect in MOSFETsPark, Jun-Young / Moon, Dong-Il / Lee, Geon-Beom / Choi, Yang-Kyu et al. | 2020
- 789
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Design and Performance Optimization of Novel Core–Shell Dopingless GAA-Nanotube TFET With Si0.5Ge0.5-Based SourceApoorva / Kumar, Naveen / Amin, S. Intekhab / Anand, Sunny et al. | 2020
- 796
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Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam EpitaxyXiong, Kuanchen / Hwang, James C. M. / Hilse, Maria / Li, Lei / Goritz, Alexander / Lisker, Marco / Wietstruck, Matthias / Kaynak, Mehmet / Engel-Herbert, Roman / Madjar, Asher et al. | 2020
- 802
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Gate-Induced Drain Leakage in Negative Capacitance FinFETsGaidhane, Amol D. / Pahwa, Girish / Verma, Amit / Chauhan, Yogesh Singh et al. | 2020
- 810
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Temperature Dependence of Analog Performance, Linearity, and Harmonic Distortion for a Ge-Source Tunnel FETDatta, Emona / Chattopadhyay, Avik / Mallik, Abhijit / Omura, Yasuhisa et al. | 2020
- 816
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Effects of Interface Traps and Self-Heating on the Performance of GAA GaN Vertical Nanowire MOSFETThingujam, Terirama / Son, Dong-Hyeok / Kim, Jeong-Gil / Cristoloveanu, Sorin / Lee, Jung-Hee et al. | 2020
- 822
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Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance ImagingPavlidis, Georges / Yates, Luke / Kendig, Dustin / Lo, Chien-Fong / Marchand, Hugues / Barabadi, Banafsheh / Graham, Samuel et al. | 2020
- 828
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Ultrathin-Barrier AlGaN/GaN Hybrid-Anode-Diode With Optimized Barrier Thickness for Zero-Bias Microwave MixerZhou, Qi / Zhang, Bo / Xiong, Wei / Yang, Xiu / Zhu, Liyang / Chen, Kuangli / Huang, Peng / Ma, Xiaoyong / Zhou, Chunhua / Chen, Wanjun et al. | 2020
- 834
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Charge-Based Compact Model of Gate Leakage Current for AlInN/GaN and AlGaN/GaN HEMTsDebnath, Ankur / DasGupta, Nandita / DasGupta, Amitava et al. | 2020
- 841
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Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive DislocationsChen, Leilei / Schrimpf, Ronald D. / Fleetwood, Daniel M. / Lu, Hai / Jin, Ning / Yan, Dawei / Cao, Yanrong / Zhao, Linna / Liang, Hailian / Liu, Bin et al. | 2020
- 847
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Augmentation and Assessment of a Universal FET ${I}$ – ${V}$ Model for Simulating GaN HEMTsDasari, Pradeep / Bhattacharya, Sudipto / Karmalkar, Shreepad et al. | 2020
- 855
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An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETsAlbrecht, M. / Klupfel, F. J. / Erlbacher, T. et al. | 2020
- 863
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Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity SiliconBenakaprasad, Bhavana / Eblabla, Abdalla M. / Li, Xu / Crawford, Kevin G. / Elgaid, Khaled et al. | 2020
- 869
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The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTsYang, Feiyuan / Dalcanale, Stefano / Gajda, Mark / Karboyan, Serge / Uren, Michael J. / Kuball, Martin et al. | 2020
- 875
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Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene GatesZhou, Guangnan / Wan, Zeyu / Yang, Gaiying / Jiang, Yang / Sokolovskij, Robert / Yu, Hongyu / Xia, Guangrui et al. | 2020
- 881
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Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access RegionsAzam, Faisal / Tanneeru, Akhilesh / Lee, Bongmook / Misra, Veena et al. | 2020
- 888
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True Random Number Generation From Commodity NVM ChipsChakraborty, Supriya / Garg, Abhilash / Suri, Manan et al. | 2020
- 895
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Strategies to Improve the Accuracy of Memristor-Based Convolutional Neural NetworksPan, Wen-Qian / Chen, Jia / Kuang, Rui / Li, Yi / He, Yu-Hui / Feng, Gui-Rong / Duan, Nian / Chang, Ting-Chang / Miao, Xiang-Shui et al. | 2020
- 902
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Capacitorless 2T-DRAM for Higher Retention Time and Sense MarginAnsari, Md. Hasan Raza / Singh, Jawar et al. | 2020
- 907
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Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and BeyondHuo, Qiang / Wu, Zhenhua / Wang, Xingsheng / Huang, Weixing / Yao, Jiaxin / Bu, Jianhui / Zhang, Feng / Li, Ling / Liu, Ming et al. | 2020
- 915
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Modeling and Simulation of Resistive Random Access Memory With Graphene ElectrodeXie, Hao / Chen, Wenchao / Zhang, Shuo / Zhu, Guodong / Khaliq, Afshan / Hu, Jun / Yin, Wen-Yan et al. | 2020
- 922
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Development of 2T-SONOS Cell Using a Contamination-Free Process Integration for a Highly Reliable Code Storage eNVMPark, Sung-Kun / Kim, Seung-Duk / Lee, Bong-Hoon et al. | 2020
- 929
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Mitigating the Impact of Channel Tapering in Vertical Channel 3-D NANDBhatt, Upendra Mohan / Manhas, Sanjeev Kumar / Kumar, Arvind / Pakala, Mahendra / Yieh, Ellie et al. | 2020
- 937
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An Aging-Resistant NAND Flash Memory Physical Unclonable FunctionSakib, Sadman / Milenkovic, Aleksandar / Rahman, Md Tauhidur / Ray, Biswajit et al. | 2020
- 944
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Vertical Inner Gate Transistors for 4F2 DRAM CellMin, Kyung Kyu / Hwang, Sungmin / Lee, Jong-Ho / Park, Byung-Gook et al. | 2020
- 949
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High-Performance Flexible Resistive RAM With PVP:GO Composite and Ultrathin HfOx Hybrid BilayerVarun, Ishan / Bharti, Deepak / Mahato, Ajay Kumar / Raghuwanshi, Vivek / Tiwari, Shree Prakash et al. | 2020
- 955
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Drain–Erase Scheme in Ferroelectric Field-Effect Transistor—Part I: Device CharacterizationWang, Panni / Wang, Zheng / Shim, Wonbo / Hur, Jae / Datta, Suman / Khan, Asif Islam / Yu, Shimeng et al. | 2020
- 962
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Drain-Erase Scheme in Ferroelectric Field Effect Transistor—Part II: 3-D-NAND Architecture for In-Memory ComputingWang, Panni / Shim, Wonbo / Wang, Zheng / Hur, Jae / Datta, Suman / Khan, Asif Islam / Yu, Shimeng et al. | 2020
- 968
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Interfacial Resistance Characterization for Blade-Type Phase Change Random Access MemoryWen, Jing / Wang, Lei et al. | 2020
- 976
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Annealing Effect on the Performance of Copper Oxide Resistive Memory DevicesHsu, Chih-Chieh / Lin, Yu-Sheng / Cheng, Chao-Wen / Jhang, Wun-Ciang et al. | 2020
- 984
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Lower Power, Better Uniformity, and Stability CBRAM Enabled by Graphene Nanohole Interface EngineeringLiu, Yanming / Yang, Kunhe / Wang, Xuefeng / Tian, He / Ren, Tian-Ling et al. | 2020
- 989
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A Novel Confined Nitride-Trapping Layer Device for 3-D NAND Flash With Robust Retention PerformancesFu, Chung-Hao / Lue, Hang-Ting / Hsu, Tzu-Hsuan / Chen, Wei-Chen / Lee, Guan-Ru / Chiu, Chia-Jung / Wang, Keh-Chung / Lu, Chih-Yuan et al. | 2020
- 995
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Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nmNishioka, K. / Sato, H. / Endoh, T. / Honjo, H. / Ikeda, S. / Watanabe, T. / Miura, S. / Inoue, H. / Tanigawa, T. / Noguchi, Y. et al. | 2020
- 1001
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Eco-Friendly Fully Water-Driven HfGdO ${_{x}}$ Gate Dielectrics and Its Application in Thin-Film Transistors and Logic CircuitsZhang, Chong / He, Gang / Fang, Zebo / Zhang, Yongchun / Xia, Yufeng / Yang, Bing / Wang, Wenhao / Alam, Fakhari / Cui, Jingbiao et al. | 2020
- 1009
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Amorphous ITZO Thin-Film Transistors by Using Ultrasonic Spray Pyrolysis DepositionLiu, Han-Yin / Hsu, Wei-Chou / Chen, Jui-Hsuan / Hsu, Pei-Huang / Lee, Ching-Sung et al. | 2020
- 1014
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Achieving High Mobility and Excellent Stability in Amorphous In–Ga–Zn–Sn–O Thin-Film TransistorsChoi, Il Man / Kim, Min Jae / On, Nuri / Song, Aeran / Chung, Kwun-Bum / Jeong, Hoon / Park, Jeong Ki / Jeong, Jae Kyeong et al. | 2020
- 1021
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Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K DielectricSaha, Jewel Kumer / Jang, Jin / Billah, Mohammad Masum / Bukke, Ravindra Naik / Kim, Youn Goo / Mude, Narendra Naik / Siddik, Abu Bakar / Islam, Md Mobaidul / Do, Youngbin / Choi, Munsu et al. | 2020
- 1027
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Current Spreading in Back-Contacted GaInP/GaAs Light-Emitting DiodesMyllynen, Antti / Sadi, Toufik / Oksanen, Jani et al. | 2020
- 1034
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Electrical Compact Modeling of SiGe Phototransistor: Impact of the Distributed Nature on Dynamic BehaviorBennour, Alae / Polleux, J. L. / Algani, C. / Tegegne, Z. G. / Mazer, S. et al. | 2020
- 1041
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Design and Optimization of VCSELs for up to 40-Gb/s Error-Free Transmission Through Impurity-Induced DisorderingPeng, Chun-Yen / Cheng, Hao-Tien / Kuo, Hao-Chung / Wu, Chao-Hsin et al. | 2020
- 1047
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Analytical Performance Analysis of CdZnO/ZnO-Based Multiple Quantum Well Solar CellSiddharth, Gaurav / Sengar, Brajendra S. / Garg, Vivek / Khan, Md Arif / Singh, Ruchi / Mukherjee, Shaibal et al. | 2020
- 1052
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A New SCR Structure With High Holding Voltage and Low ON-Resistance for 5-V ApplicationsDo, Kyoung-II / Koo, Yong-Seo et al. | 2020
- 1059
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A Novel Double-RESURF SOI-LIGBT With Improved $V_{\mathrm{\scriptscriptstyle ON}}-{E}_{ \mathrm{\scriptscriptstyle OFF}}$ Tradeoff and Low Saturation CurrentHu, Huan / Kong, Moufu / Yi, Bo / Chen, Xingbi et al. | 2020
- 1066
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A Novel IGBT With High- ${k}$ Dielectric Modulation Achieving Ultralow Turn-Off LossChen, Weizhen / Cheng, Junji / Chen, Xing Bi et al. | 2020
- 1071
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Comparative Study of SiC Planar MOSFETs With Different p-Body DesignsNi, Weijiang / Wang, Xiaoliang / Xu, Miaoling / Li, Mingshan / Feng, Chun / Xiao, Hongling / Jiang, Lijuan / Li, Wei / Wang, Quan et al. | 2020
- 1077
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High-Voltage Drain-Extended FinFET With a High- ${k}$ Dielectric Field PlateKim, Hyangwoo / Cho, Hyeonsu / Kong, Byoung Don / Park, Kangwook / Kim, Ilryong / Meyyappan, M. / Baek, Chang-Ki et al. | 2020
- 1085
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Accumulation-Mode Device: New Power MOSFET Breaking Superjunction Silicon Limit by Simulation StudyDuan, Baoxing / Wang, Yandong / Sun, Licheng / Yang, Yintang et al. | 2020
- 1090
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Hot-Carrier-Induced Degradation and Optimization for 700-V High-Voltage Lateral DMOS by the AC StressLiu, Siyang / He, Boyong / Su, Wei / Lu, Li / Ye, Ran / Wu, Haibo / Chen, Hongting / Wu, Wangran / Sun, Weifeng / Ma, Shulang et al. | 2020
- 1098
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Comparative Analysis of IGBT Parameters Variation Under Different Accelerated Aging TestsMohamed Sathik, Mohamed Halick / Sundararajan, Prasanth / Sasongko, Firman / Pou, Josep / Natarajan, Sivakumar et al. | 2020
- 1106
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Investigations on Averaging Mechanisms of Virtual Junction Temperature Determined by VCE (T) Method for IGBTsChen, Jie / Deng, Erping / Xie, Luhong / Ying, Xiaoliang / Huang, Yongzhang et al. | 2020
- 1113
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Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTsHeuken, L. / Vescan, A. / Burghartz, J. N. / Kortemeyer, M. / Ottaviani, A. / Schroder, M. / Alomari, M. / Fahle, D. / Marx, M. / Heuken, M. et al. | 2020
- 1120
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Degradation Mechanism of Ge N+-P Shallow Junction With Thin GeSn Surface LayerTsui, Bing-Yue / Liao, Hsiu-Hsien / Chen, Yi-Ju et al. | 2020
- 1126
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Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact ModelSharma, Chandan / Modolo, Nicola / Wu, Tian-Li / Meneghini, Matteo / Meneghesso, Gaudenzio / Zanoni, Enrico / Visvkarma, Ajay Kumar / Vinayak, Seema / Singh, Rajendra et al. | 2020
- 1132
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Thermoradiative-Thermionic Hybrid Energy Electron DevicesLin, Bihong / Liao, Tianjun et al. | 2020
- 1136
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Nanocomposite Material Characterization of a Solid-State Fractional CapacitorJohn, Dina A. / Banerjee, Susanta / Biswas, Karabi et al. | 2020
- 1143
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Impact of Gate Size on Abnormal Current Rise Under an Electric Field in Organic Thin-Film TransistorsChen, Hong-Chih / Huang, Hui-Chun / Wu, Wen-Chi / Lai, Wei-Chih / Chang, Ting-Chang / Chen, Guan-Fu / Chen, Jian-Jie / Kuo, Chuan-Wei / Zhou, Kuan-Ju / Tu, Yu-Fa et al. | 2020
- 1149
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General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET SensorsMele, L. J. / Palestri, P. / Selmi, L. et al. | 2020
- 1157
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Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETsYesayan, Ashkhen / Jazaeri, Farzan / Sallese, Jean-Michel et al. | 2020
- 1165
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Technological Sensor on Coupled Radial SpiralsPchelnikov, Yuriy N. / Yelizarov, Andrey A. et al. | 2020
- 1171
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Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature SensorLi, Xiaobo / Pu, Taofei / Li, Xianjie / Li, Liuan / Ao, Jin-Ping et al. | 2020
- 1176
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A Highly Sensitive Ammonia (NH3) Sensor Based on a Tungsten Trioxide (WO3) Thin Film Decorated With Evaporated Platinum (Pt) NanoparticlesChang, Ching-Hong / Chou, Tzu-Chieh / Chen, Wei-Cheng / Niu, Jing-Shiuan / Lin, Kun-Wei / Cheng, Shiou-Ying / Liu, Wen-Chau et al. | 2020
- 1183
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A CMOS-MEMS Thermal-Piezoresistive Oscillator for Mass Sensing ApplicationsZope, Anurag A. / Chang, Jung-Hao / Liu, Ting-Yuan / Li, Sheng-Shian et al. | 2020
- 1192
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Stabilized and Equalized Field-Emission Currents From Carbon Nanotube Emitters by Cascade Active-Current-ControlLee, Jeong-Woong / Song, Yoon-Ho / Jeong, Jin-Woo / Kang, Jun-Tae / Kim, Jae-Woo / Park, Sora / Jeon, Hyojin / Go, Eunsol / Ahn, Yujung / Kim, Dae-Jun et al. | 2020
- 1198
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A New Fabrication Method for Serpentine-Folded Waveguide Slow Wave Structure at $W$ -BandPanigrahi, Rajiv / Joy Thomas, M. / Vinoy, K. J. et al. | 2020
- 1205
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An Active Transmission Matrix-Based Nonlinear Analysis for Folded Waveguide TWTZhang, Ruifeng / Gong, Huarong / Lin, Xiaoyi / Wang, Tieyang / Xiao, Xiaoyi / Wang, Zhanliang / Duan, Zhaoyun / Gong, Yubin / Feng, Jinjun / Travish, Gil et al. | 2020
- 1211
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Effect of Tapered Interelectrode Gap Region on Pseudospark-Sourced Electron Beam EmissionKumar, Niraj / Lamba, Ram Prakash / Hossain, Afaque M. / Abhishek, Anand / Prakash, Ram et al. | 2020
- 1215
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Suppression of the Higher-Order Azimuthal Mode Competition in an ${X}$ -Band Triaxial Klystron Amplifier With a Slotted Coaxial WaveguideZhang, Jun / Zhang, Wei / Zhang, Dian / Ju, Jinchuan / Zhong, Huihuang et al. | 2020
- 1221
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Microwave System of Transverse Output for a High-Power ${W}$ -Band Gyro-TWTBogdashov, Alexandr A. / Samsonov, Sergey V. et al. | 2020
- 1227
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Design of Thin Wire Metamaterial-Based Interaction Structure for Backward Wave GenerationNarasimhan, Purushothaman / Jain, Sahil / Gurjar, Nikita / Kumar, Niraj / Ghosh, Sanjay Kumar et al. | 2020
- 1234
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Optimization Design of Flat-Top Pulsed Magnet for an 800-GHz Second Harmonic GyrotronWang, Pengbo / Li, Xiaofeng / Liao, Junkai / Qi, Xin / Han, Xiaotao / Xiao, Houxiu / Li, Liang et al. | 2020
- 1240
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Clustered-Cavity Approach for the Performance Improvement of a Ka-Band Second-Harmonic Gyroklystron AmplifierSwati, M. V. / Chauhan, M. S. / Jain, P. K. et al. | 2020
- 1248
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A $Ka$ -Band Folded Waveguide Traveling Wave Tube With Lumped Resistance Metamaterial AbsorberBai, Ningfeng / Xiang, Wenchen / Shen, Jingxuan / Shen, Changsheng / Sun, Xiaohan et al. | 2020
- 1254
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Development of a Ka-Band Circular TM01 to Rectangular TE10 Mode ConverterChen, Qingyun / Meng, Lin / Yan, Yang / Yuan, Xuesong / Yang, Tongbin / Xie, Jie / Xu, Xiaotao / Wang, Bin / Li, Hailong / Yin, Yong et al. | 2020
- 1259
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Wideband Rectangular TE10 to TE $_{{{n}\text{0}}}$ Mode Converters for Terahertz-Band High-Order Overmoded Planar Slow-Wave StructuresShu, Guoxiang / Cai, Zhirong / Li, Yuchen / Liu, Guo / He, Wenlong et al. | 2020
- 1266
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A Low-Voltage, Premodulation Terahertz Oscillator Based on a Carbon Nanotube Cold CathodeXu, Xiaotao / Yuan, Xuesong / Chen, Qingyun / Cole, Matthew T. / Zhang, Yu / Xie, Jie / Yin, Yong / Li, Hailong / Yan, Yang et al. | 2020
- 1270
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Audio System Fabricated With Flexible Hybrid ElectronicsStreet, Robert A. / Mei, Ping / Krusor, Brent / Lujan, Rene / Karatay, Elif / Pierre, Adrien / Schwartz, David E. / Kor, Sivkheng / Ready, Steve E. et al. | 2020
- 1277
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Effects of Self-Heating on ${f}_{\text{T}}$ and ${f}_{\text{max}}$ Performance of Graphene Field-Effect TransistorsBonmann, Marlene / Krivic, Marijana / Yang, Xinxin / Vorobiev, Andrei / Banszerus, Luca / Stampfer, Christoph / Otto, Martin / Neumaier, Daniel / Stake, Jan et al. | 2020
- 1285
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Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power ApplicationsTripathy, Manas Ranjan / Singh, Ashish Kumar / Samad, A. / Chander, Sweta / Baral, Kamalaksha / Singh, Prince Kumar / Jit, Satyabrata et al. | 2020
- 1293
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In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor MemristorCheng, Long / Zheng, Hao-Xuan / Li, Yi / Chang, Ting-Chang / Sze, Simon M. / Miao, Xiangshui et al. | 2020
- 1297
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Mismatch of Ferroelectric Film on Negative Capacitance FETs PerformanceLiang, Yuhua / Zhu, Zhangming / Li, Xueqing / Gupta, Sumeet Kumar / Datta, Suman / Narayanan, Vijaykrishnan et al. | 2020
- 1305
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Au/As2Se3/Ag/As2Se3/Yb Schottky Barriers Designed as Multifunctional DevicesAl Harbi, S. R. / Qasrawi, A. F. et al. | 2020
- 1310
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Impact of Transport Anisotropy on the Performance of van der Waals Materials-Based Electron DevicesCao, Wei / Huang, Mengqi / Yeh, Chao-Hui / Parto, Kamyar / Banerjee, Kaustav et al. | 2020
- 1317
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Design and Optimization of Triple-k Spacer Structure in Two-Stack Nanosheet FET From OFF-State Leakage PerspectiveRyu, Donghyun / Kim, Munhyeon / Kim, Sihyun / Choi, Yunho / Yu, Junsu / Lee, Jong-Ho / Park, Byung-Gook et al. | 2020
- 1323
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Significant Non-Bias-Field Magnetoelectric Response and High Output Power in a Novel Combination Based on Terfenol-D and ElectretsYun, Zhou / Jian, He / Susu, Wang / Jianfeng, Wang / Miaogen, Chen / Haomiao, Zhou / Zhiwei, Jiao / Anli, Lin et al. | 2020
- 1327
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How Can Si/Ge Core/Shell Nanowires Outperform Their Pure Material Counterparts?Lv, Yawei / Wang, Jiawei / Yang, Guanhua / Qin, Wenjing / Li, Ling / Wang, Hao et al. | 2020
- 1334
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Using Superlattice Structure in the Source of GNRFET to Improve Its Switching PerformanceBehtoee, Behrouz / Faez, Rahim / Shahhoseini, Ali / Moravvej-Farshi, Mohammad Kazem et al. | 2020
- 1340
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All-Spin Bayesian Neural NetworksYang, Kezhou / Malhotra, Akul / Lu, Sen / Sengupta, Abhronil et al. | 2020
- 1348
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Semi-Empirical $RC$ Circuit Model for Non-Filamentary Bi-Layer OxRAM DevicesMajumdar, Swatilekha / Chen, Ying / Hudec, Boris / Hou, Tuo-Hung / Suri, Manan et al. | 2020
- 1353
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Augmented DTSCR With Fast Turn-On Speed for Nanoscale ESD Protection ApplicationsDu, Feibo / Song, Wenqiang / Hou, Fei / Liu, Jizhi / Liu, Zhiwei / Liou, Juin J. / Xiong, Xuanlin / Li, Qingsa / Liu, Yang et al. | 2020
- 1357
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Inflection Phenomenon in Cryogenic MOSFET BehaviorBeckers, Arnout / Jazaeri, Farzan / Enz, Christian et al. | 2020
- 1361
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Corrections to “Optimization and Scaling of Ge-Pocket TFET”Li, Weicong et al. | 2020
- 1362
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Introducing IEEE Collabratec| 2020
- 1363
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IEEE Open Access Publishing| 2020
- 1364
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Member Get-A-Member (MGM) Program| 2020
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Table of contents| 2020
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IEEE Transactions on Electron Devices publication information| 2020
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IEEE Transactions on Electron Devices information for authors| 2020