High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma (Englisch)
- Neue Suche nach: Lee, J.-S.
- Neue Suche nach: Wakabayashi, R.
- Neue Suche nach: Saito, T.
- Neue Suche nach: Yoshimatsu, K.
- Neue Suche nach: Kado, M.
- Neue Suche nach: Ohtomo, A.
- Neue Suche nach: Lee, J.-S.
- Neue Suche nach: Wakabayashi, R.
- Neue Suche nach: Saito, T.
- Neue Suche nach: Yoshimatsu, K.
- Neue Suche nach: Kado, M.
- Neue Suche nach: Ohtomo, A.
In:
2019 Compound Semiconductor Week (CSW)
;
1-2
;
2019
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma
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Beteiligte:Lee, J.-S. ( Autor:in ) / Wakabayashi, R. ( Autor:in ) / Saito, T. ( Autor:in ) / Yoshimatsu, K. ( Autor:in ) / Kado, M. ( Autor:in ) / Ohtomo, A. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.05.2019
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Format / Umfang:931492 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
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Synthesis of $\alpha$-Ga2O3 thin films on Au nanoparticles dispersed on sapphire substrates for epitaxial lateral overgrowthKaneko, Kentaro / Masuda, Yasuhisa / Fujita, Shizuo et al. | 2019
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Electrically injected $1.64\ \boldsymbol{\mu} \mathbf{m}$-emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPEKim, Honghyuk / Shi, Bei / Li, Qiang / Rajeev, Ayushi / Lau, Kei May / Kuech, Thomas F. / Mawst, Luke J. et al. | 2019
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Influence of post-annealing on properties of $\alpha$-Ga2O3 epilayer grown by halide vapor phase epitaxySon, Hoki / Choi, Ye-Ji / Ra, Yong-Ho / Lee, Young-Jin / Kim, Jin-Ho / Kim, Sun Woog / Lim, Tae-Young / Hwang, Jonghee / Jeon, Dae-Woo et al. | 2019
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Growth and characterization of InN epi-films on nitrided Si3N4 layer by RF-MOMBEChen, Sheng / Chen, Wei-Chun / Cheng, Chin-Pao et al. | 2019
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Experimental Verification of Substrate Bias Effect on the Gate Charge for GaN HEMTsYang, Wen / Yuan, Jiann-Shiun et al. | 2019
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Evaluation of Rabi frequency and coherence time in the hyperfine structure of 167Er3+ in Y2SiO5 through coherent transientsHiraishi, Masaya / IJspeert, Mark / Tawara, Takehiko / Adachi, Satoru / Omi, Hiroo / Gotoh, Hideki et al. | 2019
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Organic Light-Emitting Diode Composed of an Oligomer Crystal Emission LayerYamao, Takeshi / Nishimura, Koki / Inada, Yuhi / Hotta, Shu et al. | 2019
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Simulation Study of Front-illuminated GaN Avalanche Photodiodes with Hole-initiated MultiplicationWang, Yangqian / Zhang, Yuliang / Yang, Yang A. / Lu, Xing / Zou, Xinbo et al. | 2019
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Threshold voltages of AlGaN/GaN metal-insulator-semiconductor devices with AlN or Al2O3 gate insulatorsDemura, Hirotomo / Deng, Yuchen / Dai Nguyen, Duong / Suzuki, Toshi-Kazu et al. | 2019
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Blue (In, Ga)N Light-Emitting Diodes with Buried $\boldsymbol{n}^{+}-\boldsymbol{p}^{+}$ Tunnel Junctions by Plasma-Assisted Molecular Beam EpitaxyCho, YongJin / Bharadwaj, Shyam / Hu, Zongyang / Nomoto, Kazuki / Jahn, Uwe / Xing, Huili Grace / Jena, Debdeep et al. | 2019
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Extension of excitation energy to generate terahertz wave to smaller than GaAs bandgap energy due to growth of InAs quantum dots and nitrogen doped layerKojima, Osamu / Kita, Takashi et al. | 2019
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Picosecond Time-Resolved Excitation Dynamics and Emission Manipulation of Eu3+ Ions Doped into GaNMitchell, Brandon / Wei, Ruoqiao / Timmerman, Dolf / Gregorkiewicz, Tom / Ichikawa, Shuhei / Tatebayashi, Jun / Dierolf, Volkmar / Fujiwara, Yasufumi et al. | 2019
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Fabrication of $02.5 \ \mu\mathrm{m}$ T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical LithographyLiu, Yi-Zhen / Ho, Wei-Chih / Sanyal, Indraneel / Chyi, Jen-Inn et al. | 2019
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Observation of Electroreflectance Spectra of $\beta$-Ga2O3 Single CrystalOnuma, Takeyoshi / Tanaka, Kouya / Sasaki, Kohei / Yamaguchi, Tomohiro / Honda, Tohru / Kuramata, Akito / Yamakoshi, Shizenobu / Higashiwaki, Masataka et al. | 2019
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Investigation of optical loss and bandwidth of InP-organic hybrid optical modulatorSekine, Naoki / Takagi, Shinichi / Takenaka, Mitsuru et al. | 2019
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The thermal stability of $\varepsilon$-Ga2O3 thin films grown on (111) 3C-SiC template substratesKoyama, Masatoshi / Kaneko, Toyokazu / Fujiwara, Sodai / Maemoto, Toshihiko / Sasa, Shigehiko et al. | 2019
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Low-Threshold Vertical Lasing from InP Nanowire Embedded in Cat's Eye AntennaRen, Fangfang / Xu, Weizong / Ye, Jiandong / Tan, Hark Hoe / Jagadish, Chennupati et al. | 2019
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InGaAs Quantum Dot Dual-Band Photodetector of Bipolar PhotocurrentLay, Tsong-Sheng / Lin, Z. H. / Tzeng, T. E. et al. | 2019
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Demonstration of Low-Resistive P-Type Cu4O3 Thin Films by Radio Frequency Sputtering for Low-Cost Thin Film Solar CellsPatwary, Md Abdul Majed / Saito, Katsuhiko / Guo, Qixin / Tanaka, Tooru / Yu, Kin Man / Walukiewicz, Wladek et al. | 2019
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$\mathbf{1545}\ \mu \mathbf{m}$ Quantum Dot Vertical Cavity Surface Emitting Laser with low thresholdParanthoen, Cyril / Levallois, Christophe / Chevalier, Nicolas / Corre, Alain Le / Brevalle, Gaelle / Perrin, Mathieu / Tavernier, Karine / Folliot, Herve / Alouini, Mehdi et al. | 2019
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Thermoelectrically Cooled nBn T2SLs InAs/InAsSb/B-AlAsSb MWIR DetectorMartyniuk, Piotr / Michalczewski, Krystian / Tsai, Tsung Yin / Wu, Chao-Hsin / Wu, Yuh-Renn et al. | 2019
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Using optical emission spectroscopy (OES) to monitor In-line very high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique optoelectrical propertiesLin, Jia-Yan / Hung, Cheng-Yuan / Tien, Wei-Chen / Wu, Hung-Wei / Juang, Yung-Der / Lin, Jia-Hao / Liu, Shih-Kun et al. | 2019
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Electric-field control of optical-spin injection from an InGaAs quantum well to p-doped quantum dotsPark, Soyoung / Chen, Hang / Takayama, Junichi / Hiura, Satoshi / Murayama, Akihiro et al. | 2019
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Photoluminescence Mapping Analysis of In-Plane Ultrahigh-Density InAs/GaAsSb Quantum Dot LayersTatsugi, Sho / Sugiyama, Ryo / Yamaguchi, Koichi et al. | 2019
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Processing of GaN vertical devices: Static Induction TransistorsChowdhury, Srabanti / Chun, Jaeyi et al. | 2019
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Low resistive and low dislocation GaN wafer produced by OVPE methodTakino, Junichi / Sumi, Tomoaki / Okayama, Yoshio / Nobuoka, Masaki / Kitamoto, Akira / Imanishi, Msayuki / Yoshimura, Masashi / Mori, Yusuke et al. | 2019
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Growth and characterization of quaternary AlGaInN epitaxial films with alloy compositions around lattice-matched to GaNHarada, Hiroki / Miyoshi, Makoto / Egawa, Takashi / Takeuchi, Tetsuya et al. | 2019
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Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial $\pmb{\beta}$ -Ga2O3 Grown by MOVPEAnooz, Saud Bin / Popp, Andreas / Gruneberg, Raimund / Fiedler, Andreas / Irmscher, Klaus / Schewski, Robert / Albrecht, Martin / Galazka, Zbigniew / Wagner, Gunter et al. | 2019
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Development of Carrier Concentration and Its Effects on the Electrical Stability of Al-doped ZnO Transparent Electrode in Harsh EnvironmentMachda, Fahmi / Ogawa, Takaya / Okumura, Hideyuki / Ishihara, Keiichi N. et al. | 2019
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Impurity and isotope control of cubic and hexagonal boron nitride crystals under solution growth processTaniguchi, Takashi et al. | 2019
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THz Frequency HEMTs: Future Trends and ApplicationsLeuther, Arnulf / Merkle, Thomas / Weber, Rainer / Sommer, Rainer / Tessmann, Axel et al. | 2019
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InP-based devices integrating liquid crystals microcells for a tunable laser emission or a wavelength selective photodetectionLevallois, C. / Boisnard, B. / Paranthoen, C. / Pes, S. / Camps, T. / Sadani, B. / Bouchoule, S. / Dupont, L. / Alouini, M. / Bardinal, V. et al. | 2019
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Interface engineering of Sn-based oxide semiconductorsTsukazaki, Atsushi / Fujiwara, Kohei et al. | 2019
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Liquid Crystals as Polycrystalline Materials for Organic Thin Film TransistorsIino, Hiroaki et al. | 2019
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CSW2019 Author Index| 2019
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Low Loss InP Membrane Photonic Integrated Circuits Enabled by 193-nm Deep UV Lithographyvan Engelen, Jorn / Reniers, Sander / Bolk, Jeroen / Williams, Kevin / van der Tol, Jos / Jiao, Yuqing et al. | 2019
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InxGa1-xN Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) with Growth Rates Up to $1.3\ \boldsymbol{\mu} \mathbf{m}/\mathbf{hr}$Jorgensen, Kelsey F. / Speck, James S. et al. | 2019
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Nanoscale Transfer Printing for the Heterogeneous Integration of Semiconductor Nanowire LasersHurtado, Antonio / Jevtics, Dimitars / Guilhabert, Benoit / Robertson, Joshua / McPhillimy, John / Strain, Michael / Tan, Hoe / Jagadish, Chennupati / Dawson, Martin et al. | 2019
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Spin dependent transport properties of spin bipolar transistors using a (Ga, Fe)Sb/(In, Fe)As p-n junctionChonan, Koki / Arakawa, Yuto / Tanaka, Masaaki / Hai, Pham Nam et al. | 2019
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Spectral Hole Burning Spectroscopy on Quantum Dashes and Quantum Dots for Dual-Frequency Laser EngineeringBrevalle, Gaelle / Perrin, Mathieu / Paranthoen, Cyril / Leger, Yoan / Levallois, Christophe / Chevalier, Nicolas / Folliot, Herve / Alouini, Mehdi et al. | 2019
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Numerical Demonstration of Trade-off between Carrier Confinement Effect and Carrier Transport for Multiple-Quantum-Well Based High-efficiency InGaP Solar CellsHuang, Hsiang-Hung / Toprasertpong, Kasidit / Delamarre, Amaury / Watanabe, Kentaroh / Sugiyama, Masakazu / Nakano, Yoshiaki et al. | 2019
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MOS interface control for GaN power transistorsHashizume, Tamotsu et al. | 2019
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n-doped InGaP Nanowire Shells in Core-Shell pn-junctionsLiborius, Lisa / Bieniek, Jan / Nagelein, Andreas / Tegude, Franz-Josef / Poloczek, Artur / Weimann, Nils et al. | 2019
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Effects of p-doping on excited spin states and the dynamics in InGaAs quantum dotsSato, Shino / Murakami, Motoya / Nakamura, Yuto / Hiura, Satoshi / Takayama, Junichi / Murayama, Akihiro et al. | 2019
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Novel Composite Substrates for Thin Film AlGaInP-based High Power LEDsHorng, Ray Hua / Sinha, ShreeKant / Feng, Hsiang-An / Chung, Cheng-Yu / Tu, Chia-Wei et al. | 2019
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High-temperature Plasma-assisted Molecular Beam Epitaxy of hBN LayersCheng, T. S. / Summerfield, A. / Mellor, C. J. / Cassabois, G. / Gil, B. / Eaves, L. / Foxon, C. T. / Beton, P. H. / Novikov, S. V. et al. | 2019
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Quantum entangled photon emitting diodes based on GaAs quantum dots on (111)A: Robustness against increasing temperatureHa, Neul / Mano, Takaaki / Kuroda, Takashi / Sakoda, Kazuaki et al. | 2019
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Effects of Impurity Hubbard Bands on the Hall Effect in n-InPKajikawa, Yasutomo et al. | 2019
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1.2 THz maximum frequency of oscillation achieved by using 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMTSamnouni, M. / Wichmann, N. / Wallart, X. / Coinion, C. / Lepilliet, S. / Bollaert, S. et al. | 2019
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Optical Properties of Room Temperature Single Photon Emitters in GaNKianinia, Mehran / Nguyen, Minh / Zhu, Tongtong / Bradac, Carlo / Toth, Milos / Oliver, Rachel / Aharonovich, Igor et al. | 2019
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Demonstration of Germanium Doping to GaP-based Dilute NitridesYamane, Keisuke / Tanaka, Shunsuke / Wakahara, Akihiro et al. | 2019
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Short/mid-wave two-band type II InAs/GaSb superlattice infrared heterojunction phototransistorHuang, Wenjun / Huang, Jianliang / Zhang, Yanhua / Zhao, Chengcheng / Nie, Biying / Cao, Yulian / Ma, Wenquan et al. | 2019
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Emergent transport phenomena in MBE-grown 2D materials and their heterostructuresNakano, Masaki / Iwasa, Yoshihiro et al. | 2019
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Growth and Deep UV Luminescent Properties of Rocksalt-Structured Ultra-Wide Bandgap MgZnO on MgO SubstratesKaneko, Kentaro / Ishii, Kyohei / Ono, Mizuki / Kudo, Kanta / Onuma, Takeyoshi / Honda, Tohru / Fujita, Shizuo et al. | 2019
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Integrated synthesis of graphene nanoribbon-based field effect transistor with high on/off ratioOgura, Noritada / Suzuki, Hiroo / Kaneko, Toshiro / Kato, Toshiaki et al. | 2019
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Crystalline and Electrical Properties of $\mathrm{Ge}_{1-\mathrm{x}}\mathrm{Sn}_{\mathrm{x}}/\mathrm{Ge}_{1-\mathrm{x}-\mathrm{y}}\mathrm{Si}_{\mathrm{x}}\mathrm{Sn}_{\mathrm{y}}$ Quantum Well StructuresSuwito, Galih Ramadana / Fukuda, Masahiro / Shibayama, Shigehisa / Sakashita, Mitsuo / Nakatsuka, Osamu / Zaima, Shigeaki et al. | 2019
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Device characteristics of solution-processed molecular floating-gate transistor memories based on ambipolar polymer semiconductorsHigashinakaya, Miho / Abe, Hayato / Nagase, Takashi / Kobayashi, Takashi / Naito, Hiroyoshi et al. | 2019
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Selective area epitaxy of GaP nanowire array on Si (111) by MOCVDChoi, Wonsik / Fan, Shizhao / Mohseni, Parsian / Lee, Minjoo Larry / Li, Xiuling et al. | 2019
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Modulation of Nuclear Quadrupole Effect by a Longitudinal Magnetic Field in Transverse Nuclear Field FormationYamamoto, Sota / Arakawa, Takuya / Matsusaki, Ryosuke / Kaji, Reina / Adachi, Satoru et al. | 2019
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Gate-controlled proximity magnetoresistance in an InAs / (Ga,Fe)Sb quantum well heterostructureTakiguchi, Kosuke / Duc Anh, Le / Chiba, Takahiro / Koyama, Tomohiro / Chiba, Daichi / Tanaka, Masaaki et al. | 2019
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Development of High-power High-thermal Conductivity GaN High Electron Mobility TransistorsLin, Dai-Jie / Lee, Yu-Hsuan / Huang, Jian-Jang et al. | 2019
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Dilute Waveguide Reflective Semiconductor Optical Amplifier for 3D Hybrid Silicon Photonics IntegrationSong, Bowen / Luo, Youning / Pinna, Sergio / Liu, Yuan / Klamkin, Jonathan et al. | 2019
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Spin Detection in GaAs/AlGaAs Quantum Wells by Inverse Spin-Hall EffectSakai, Y. / Chatani, T. / Nakagawa, T. / Ritzmann, J. / Ludwig, A. / Wieck, A.D. / Oiwa, A. et al. | 2019
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Relative intensity noise of silicon-based quantum dot lasersDuan, J. / Huang, H. / Jung, D. / Norman, J. C. / Bowers, J. E. / Grillot, F. et al. | 2019
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Effects of chamber pressure on the hydrogenated amorphous silicon thin film by microwave annealingLin, Jia-Hao / Wu, Hung-Wei / Tien, Wei-Chen / Hung, Cheng-Yuan / Liu, Shih-Kun et al. | 2019
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Taper Length Dependence of Double-Taper-Type Coupler for GaInAsP/SOI Hybrid Integrated PlatformMiyazaki, Takayuki / Tachibana, Fumihito / Kikuchi, Takehiko / Hiratani, Takuo / Yagi, Hideki / Eissa, Moataz / Mitarai, Takuya / Amemiya, Tomohiro / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2019
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Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formationMin Kim, Soo et al. | 2019
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High performance Fully-vertical GaN-on-Si power MOSFETsAbdul Khadar, Riyaz Mohammed / Liu, Chao / Soleimanzadeh, Reza / Matioli, Elison et al. | 2019
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Vertical Ga2O3 Schottky Barrier Diodes with Guard Ring Formed by Nitrogen-Ion ImplantationLin, Chia-Hung / Yuda, Yohei / Wong, Man Hoi / Sato, Mayuko / Takekawa, Nao / Konishi, Keita / Watahiki, Tatsuro / Yamamuka, Mikio / Murakami, Hisashi / Kumagai, Yoshinao et al. | 2019
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Characterization of the Effective Tunneling Time and Phase Relaxation Time in Triple-Barrier Resonant Tunneling DiodesAikawa, Kotaro / Suhara, Michihiko / Asakawa, Kiyoto / Arzi, Khaled / Weimann, Nils / Prost, Werner et al. | 2019
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Demonstration of InAs nanowire vertical transistorsGamo, Hironori / Motohisa, Junichi / Tomioka, Katsuhiro et al. | 2019
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Optical Characterization of Co-doped Single Crystal Organic Semiconductor with Emissive and Assist DopantsWatanabe, Kosuke / Takeuchi, Keita / Abe, Ryogo / Suzuki, Asuka / Kikuchi, Akihiko et al. | 2019
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Strained layer superlattices for dislocation reduction in III-V on V-groove patterned (001) siliconShi, Bei / Wang, Lei / Taylor, Aidan / Brunelli, Simone Suran / Klamkin, Jonathan et al. | 2019
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GaN-based Inverter by Monolithic Integration of Threshold Controlled MOSFETsSekiguchi, Hiroto / Miwa, Kiyomasa / Yamane, Keisuke / Wakahara, Akihiro / Okada, Hiroshi et al. | 2019
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High-Performance In0.53Ga0.47 As FinFETs for logic and RF ApplicationsChang, Edward Yi / Luc, Ho Quang / Lin, Chin Yueh et al. | 2019
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Effect of growth variables on properties of gallium oxide thin films grown by sputteringPatil, Vijay / Lee, Byung-Taek / Jeong, Sang-Hun et al. | 2019
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Transfer printing of III-V devices for silicon photonicsCorbett, B. / Loi, R. / Liu, L. / Roycroft, B. / O'Callaghan, J. et al. | 2019
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Chemical vapor deposition growth of boron incorporated graphitic carbon nitride film for carbon based semiconductor systemsUrakami, Noriyuki / Kosaka, Maito / Hashimoto, Yoshio et al. | 2019
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N-polar GaN HEMT with Al2O3gate insulatorHayasaka, A. / Aonuma, R. / Hotta, K. / Makabe, I. / Yoshida, S. / Miyamoto, Y. et al. | 2019
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GaN HEMT Characterization for Base StationsYamamoto, Hiroshi / Kikuchi, Ken / Ui, Norihiko et al. | 2019
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Investigation of Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before Activation Annealing Using MOS StructuresKamoshida, Ryo / Uetake, Kei / Murai, Shunta / Akazawa, Masamichi et al. | 2019
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The Effect of Tetramethylammonium Hydroxide Treatment on Photoelectrochemical Etched Gallium Nitride Trench StructuresHorikiri, Fumimasa / Ohta, Hiroshi / Asai, Naomi / Narita, Yoshinobu / Yoshida, Takehiro / Mishima, Tomoyoshi et al. | 2019
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Observation of dominant non-local superconducting proximity effect due to electron-electron interaction in a ballistic double nanowireUeda, Kento / Matsuo, Sadashige / Kamata, Hiroshi / Sato, Yosuke / Takeshige, Yusuke / Li, K. / Jeppessen, Soren / Samuelson, Lars / Xu, Hongqi / Tarucha, Seigo et al. | 2019
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Characterization of Si(111) surface nitridation on the properties of Si3N4 films grown by RF-N2 plasma exposureChen, Wei-Chun / Chen, Sheng / Su, James / Chen, Hung-Pin / Lin, Yu-Wei / Cheng, Chin-Pao et al. | 2019
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Relaxed InGaN engineered substrates with lattice parameter of 3,205A and beyond enabling direct emission at 630nmGuiot, Eric / Sotta, David / Ledoux, Olivier / Lagrange, Melanie / Lavaitte, Guillaume / Dussaigne, Amelie / Chenot, Sebastien / Damilano, Benjamin et al. | 2019
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Ultra-high Temperature Growth of Layered Hexagonal Boron Nitride on Sapphire by Molecular Beam EpitaxyPage, Ryan Lowry / Cho, Yongjin / Casamento, Joseph / Rouvimov, Sergei / Xing, Huili Grace / Jena, Debdeep et al. | 2019
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Epitaxial growth of BaSi2 light absorbers by molecular beam epitaxy and significant photoresponsivity enhancement by increased growth temperaturesYamashita, Yudai / Toko, Kaoru / Suemasu, Takashi et al. | 2019
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Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-ScalePan, Dong / Zhao, Jianhua et al. | 2019
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Development of n-type GaN film by Si and Ti co-sputtering technique on a glass substrateLiu, Wei-Sheng / Tan, Chun-Yuan / Chang, Yu-Lin / Tsai, Cheng-Ting et al. | 2019
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Ultra-low Noise Widely-Tunable Semiconductor Lasers Fully Integrated on SiliconTran, M. A. / Huang, D. / Guo, J. / Peters, J. / Komljenovic, T. / Morton, P. A. / Khurgin, J. B / Morton, C. D. / Bowers, J. E. et al. | 2019
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Investigation of InAs Quantum Dot Deformation During Capping with an InGaAs Layer Using Time-resolved RHEED MeasurementsIkuno, Daigo / Wang, Tao / Okada, Naoki / Ozaki, Nobuhiko et al. | 2019
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Enabling Low Temperature Aluminum Nitride ALD by Use of a Novel Hydrazine SourceAlvarez, Daniel / Spiegelman, Jeffrey J. / Andachi, Keisuke / Kondusamy, Aswin / Kim, Jiyoung et al. | 2019
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Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device ApplicationsKatzer, D Scott / Nepal, Neeraj / Hardy, Matthew T. / Downey, Brian P. / Storm, David F. / Jin, Eric N. / Meyer, David J. / Yan, Rusen / Khalsa, Guru / Wright, John et al. | 2019
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Topological edge state laser using a photonic crystal nanocavity arrayHan, Changhyun / Lee, Myungjae / Kang, Minsu / Jeon, Heonsu et al. | 2019
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Temperature dependence of the intersystem crossing rate in thermally activated delayed fluorescence emittersKobayashi, Takashi / Kawase, Daisuke / Niwa, Akitsugu / Kayamyo, Atsumi / Nagase, Takashi / Goushi, Kenichi / Adachi, Chihaya / Naito, Hiroyoshi et al. | 2019
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Effect of Annealing on The Bottom Cell in GaInP/GaAs/GaInNAsSb Triple Junction Solar Cells by MBE/MOCVD Hybrid GrowthMiyashita, Naoya / He, Yilun / Ahsan, Nazmul / Okada, Yoshitaka et al. | 2019
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Impact of Lowering Threading Dislocation Density on Performances of Vertical GaN p-n Junction DiodesOhta, Hiroshi / Asai, Naomi / Horikiri, Fumimasa / Narita, Yoshinobu / Yoshida, Takehiro / Mishima, Tomoyoshi et al. | 2019
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Uncooled 53-Gbaud PAM4 Operation of EA/DFB and Directly Modulated DFB Laser for 400GbE ApplicationsNaoe, Kazuhiko / Nakajima, Takayuki / Nakai, Yoshihiro / Yamaguchi, Yoriyoshi / Sakuma, Yasushi / Sasada, Noriko et al. | 2019
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Characterization of amorphous aluminium oxide thin films synthesized by mist-CVDYatabe, Zenji / Nishiyama, Koshi / Tsuda, Takaaki / Nishimura, Kazuki / Nakamura, Yusui et al. | 2019
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Breakdown of Pauli spin blockade by phonon irradiation in a GaAs double quantum dotMatsuo, Sadashige / Kuroyama, Kazuyuki / Muramoto, Jo / Valentin, Sascha R. / Ludwig, Arne / Wieck, Andreas D. / Tokura, Yasuhiro / Tarucha, Seigo et al. | 2019
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Enhanced Electrical Properties of AlInN/AlN/GaN Heterostructure using $\mathbf{Al}_{\mathbf{x}}\mathbf{Ga}_{1-\mathbf{x}}\mathbf{N}/\mathbf{Al}_{\mathbf{y}}\mathbf{Ga}_{1-\mathbf{y}}\mathbf{N}$ superlatticeChen, Yu-Chih / Sanyal, Indraneel / Chyi, Jen-Inn et al. | 2019
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Strong Light-Matter Coupling and Photoluminescence Properties of 2D and quasi-2D Perovskite MicrocavitiesZhang, Shuai / Ni, Limeng / Rao, Akshay / Yamashita, Kenichi et al. | 2019
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CVD Growth of BN Thin Films using B2H6Yamada, Hisashi / Inotsume, Sho / Kumagai, Naoto / Yamada, Toshikazu / Shimizu, Mituaki et al. | 2019
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Lateral electronic coupling among self-assembled semiconductor quantum dots promoted by adjoining tunnel-coupled quantum-well potentialsTakayama, Junichi / Hiura, Satoshi / Takeishi, Kazuki / Kiba, Takayuki / Murayam, Akihiro et al. | 2019
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Photonic-crystal Lasers with Extremely Short Embedded Active-regionsTsurugaya, Takuma / Takeda, Koji / Fujii, Takuro / Kuramochi, Eiichi / Shinya, Akihiko / Notomi, Masaya / Kakitsuka, Takaaki / Fukuda, Hiroshi / Matsuo, Shinji et al. | 2019
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Demonstration of a Fully-Vertical GaN MOSFET on SiBiswas, Debaleen / Torii, Naoki / Yamamoto, Keiji / Egawa, Takashi et al. | 2019
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Growth of GaAs/GaNAs/GaAs Core-Multishell Nanowires Lasing at $1\mu \mathrm{m}$Yukimune, Mitsuki / Fujiwara, Ryo / Ishikawa, Fumitaro / Chen, Shula / Chen, Weimin M. / Buyanova, Irina A. et al. | 2019
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Threshold and Resistive Switching Behaviors in Epitaxially Regrown GaN P-N Diodes for High Temperature ApplicationsFu, Kai / Fu, Houqiang / Huang, Xuanqi / Yang, Tsung-Han / Chen, Hong / Montes, Jossue / Yang, Chen / Zhou, Jinan / Zhao, Yuji et al. | 2019
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Current Collapse Suppression by Silicon Substrate Removal Technique in AlGaN/GaN HEMTChen, Yueh-Ting / Huang, Jian-Jang et al. | 2019
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Analysis of threshold voltage in GaN MOSFETs on homoepitaxial p-type GaN layersKikuta, Daigo / Ito, Kenji / Narita, Tetsuo / Kachi, Tetsu et al. | 2019
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One-dimensional electronic states in highly-stacked InAs/GaAs quantum dot superlatticesKaizu, Toshiyuki / Kita, Takashi et al. | 2019
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Performance Projection of 500V – 5kV AlGaAs/GaAs Vertical Polarization and Doped Superjunction (PDSJ) DevicesZhou, Xiang / Chow, T. Paul et al. | 2019
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Diffusive spin dynamics in 10 nm wide InGaAs/InAlAs quantum wellsShida, Hiroki / Saito, Yasuhito / Kawaguchi, Kohei / Takazawa, Ichirota / Kitada, Takahiro / Kohda, Makoto / Ishitani, Yoshihiro / Morita, Ken et al. | 2019
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Physical vapor transport growth of trigonal selenium crystalSuzuki, Yuichiro / Urakami, Noriyuki / Hashimoto, Yoshio et al. | 2019
- 1
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VUV Cathodoluminescence Spectra of Rocksalt-structured MgZnO/MgO Quantum WellsKudo, K. / Ishii, K. / Ono, M. / Fujiwara, Y. / Kaneko, K. / Yamaguchi, T. / Honda, T. / Fujita, S. / Onuma, T. et al. | 2019
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Analysis of emission characteristics of deep levels in GaN by direct photo excitationKikuchi, Moe / Uehara, Daisuke / Ma, Bei / Morita, Ken / Miyake, Hideto / Ishitani, Yoshihiro et al. | 2019
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All solid-state 2D tunnel FETNagashio, Kosuke et al. | 2019
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Turbostratic stacking effect in multilayer graphene on the electrical transport propertiesNegishi, Ryota / Wei, Chaopeng / Ogawa, Yui / Akabori, Masashi / Taniyasu, Yoshikata / Kobayashi, Yoshihiro et al. | 2019
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Voltage and Frequency Dependence of Capacitance Characteristics in Organic MOS CapacitorsKimura, Yoshinari / Hattori, Yoshiaki / Kitamura, Masatoshi et al. | 2019
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Buried-ridge-waveguide Type GaInAsP/InP Membrane Distributed-Reflector Lasers for Reduction of Differential ResistanceTakahashi, Naoki / Nakamura, Nagisa / Yoshida, Takamasa / Fang, Weicheng / Amemiya, Tomohiro / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2019
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Investigation of InP/Si bonding condition for optimizing Photoluminescence property by Surface Activated Bonding based on Fast Atom BeamWang, Yuning / Mitarai, Takuya / Amemiya, Tomohiro / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2019
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Schedule at a Glance| 2019
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Improved on-state breakdown characteristics in AlGaN/GaN MOS-HEMTs with a gate field plateNishitani, T. / Yamaguchi, R. / Asubar, J. T. / Tokuda, H. / Kuzuhara, M. et al. | 2019
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Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for a complementary tunnel FETsTomioka, Katsuhiro / Yoshida, Akinobu / Gamo, Hironori et al. | 2019
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High-performance nanowire-based E-mode Power GaN MOSHEMTsNela, Luca / Zhu, Minghua / Ma, Jun / Matioli, Elison et al. | 2019
- 1
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Chiral Cavity Mode in a GaAs-Based Three-Dimensional Photonic Crystal Fabricated by a Micro-Manipulation Method using an Optical MicroscopeKinuta, Yuzo / Takahashi, Shun / Yamashita, Kenichi / Tatebayashi, Jun / Iwamoto, Satoshi / Arakawa, Yasuhiko et al. | 2019
- 1
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Nitrogen-Doped Channel $\beta$-Ga2O3 MOSFET with Normally-Off OperationKamimura, Takafumi / Nakata, Yoshiaki / Wong, Man Hoi / Than, Phuc Hong / Higashiwaki, Masataka et al. | 2019
- 1
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Dislocation free InP/lnGaAs/lnP islands on Si by micro-channel selective area MOVPEFu, Yufeng / Otake, Nobuyuki / Sugiyama, Masakazu et al. | 2019
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Template-assisted selective epitaxy for III-V vertical nanowires on Si tandem solar cellsTrivino, Noelia Vico / Staudinger, P. / Bologna, N. / Riel, H. / Moselund, K. / Schmid, H. et al. | 2019
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Influence of contact resistances on high-mobility top-gate organic transistors based on didodecylbenzothienobenzothiopheneTazuhara, Shion / Aiba, Tomoya / Nagase, Takashi / Kobayashi, Takashi / Sadamitsu, Yuichi / Naito, Hiroyoshi et al. | 2019
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Properties of the In2O3(111) and the $\boldsymbol{\beta}-\mathbf{Ga}_{2}\mathbf{O}_{3}(100)$ non-polar surfacesSchulze, Celina Seraphin / Hofmann, Jonathan / Bruckmann, Christian / Zielinski, Robert / Martyanov, Wjatscheslav / Janssen, Hendrik / Lenz, Andrea / Franz, Martin / Galazka, Zbigniew / Eisele, Holger et al. | 2019
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Spin-dependent quantum emission from defects in hexagonal boron nitrideBassett, Lee et al. | 2019
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Observation on Carrier Dynamics of Intermediate Band in Multi Stacked InGaAs Quantum Dots using Two Color ExcitationGoshima, Keishiro / Tsuda, Norio / Sugaya, Takeyoshi et al. | 2019
- 1
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Investigation of Morphology of InSb/InAs Quantum Nano-Stripe Grown by Molecular Beam EpitaxyRongrueangkul, Karn / Srisinsuphya, Panithan / Thainoi, Supachok / Kiravittaya, Suwit / Nuntawong, Noppadon / Sopitpan, Suwat / Yordsri, Visittapong / Thanachayanont, Chanchana / Kanjanachuchai, Songphol / Ratanathammaphan, Somchai et al. | 2019
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Cyclotron resonance absorption in trilayer grapheneOnodera, Momoko / Arai, Miho / Masubuchi, Satoru / Kinoshita, Kei / Moriya, Rai / Watanabe, Kenji / Taniguchi, Takashi / Machida, Tomoki et al. | 2019
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Toward MIR VCSELs operating in CW at RTDiaz Thomas, Daniel Andres / Stepanenko, Oleksandr / Batte, Thomas / Bahriz, Michael / Calvez, Stephane / Paranthoen, Cyril / Tournie, Eric / Almuneau, Guilhem / Levallois, Christophe / Baranov, Alexei et al. | 2019
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Ballistic spin locking in a two-dimensional Rashba systemKohda, Makoto / Okayasu, Takanori / Nitta, Junsaku et al. | 2019
- 1
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Enhanced Super-Resolution Imaging of Quantum Emitters in Hexagonal Boron NitrideKianinia, Mehran / Bradac, Carlo / Sontheimer, Bernd / Wang, Fan / Tran, Toan Trong / Nguyen, Minh / Kim, Sejeong / Xu, Zai-Quan / Jin, Dayong / Schell, Andreas W. et al. | 2019
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Effects of growth temperature of a capping layer on excited spin properties of In0.5Ga0.5As quantum dotsNakamura, Yuto / Hiura, Satoshi / Sato, Shino / Takayama, Junichi / Murayama, Akihiro et al. | 2019
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Towards quantum teleportation with quantum-dot spin qubitsKojima, Yohei / Nakajima, Takashi / Noiri, Akito / Yoneda, Jun / Otsuka, Tomohiro / Takeda, Kenta / Li, Sen / Bartlett, Stephen D. / Ludwig, Arne / Dirk Wieck, Andreas et al. | 2019
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High stability of the epitaxial graphene film on SiC substrateKujime, Takaya / Taniguchi, Yoshiaki / Akiyama, Daiu / Kawamura, Yusuke / Ohno, Yasuhide / Nagase, Masao et al. | 2019
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Experimental Demonstration of Avalanche Noise in GaN PN Junctions Grown on Native GaN SubstratesCao, Lina / Wang, Jingshan / Ye, Hansheng / Fay, Patrick et al. | 2019
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Device characteristics and MIS interface evaluation of Al2O3/AlGaInN/AlGaN MIS HFETSaito, Saki / Hosomi, Daiki / Furuoka, Keita / Chen, Heng / Kubo, Toshiharu / Egawa, Takashi / Miyoshi, Makoto et al. | 2019
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Characterization of Nanowire Devices Using Nano-Focused X-Ray BeamsWallentin, Jesper et al. | 2019
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Title Page| 2019
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$1.6 \ \mu \mathbf{m}$ Emission from InAs QDs in Metamorphic InGaAs MatrixZhan, Wenbo / Ishida, Satomi / Kwoen, Jinkwan / Iwamoto, Satoshi / Arakawa, Yasuhiko et al. | 2019
- 1
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Multi-wavelength DFB laser array in InAs/GaAs quantum dot material epitaxially grown on SiliconYu, Siyuan / Liu, Huiyun / Yu, Ying / Wang, Yi et al. | 2019
- 1
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High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO PlasmaLee, J.-S. / Wakabayashi, R. / Saito, T. / Yoshimatsu, K. / Kado, M. / Ohtomo, A. et al. | 2019
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Transition Metal Doped InGaAs Photoconductors for THz DetectorsBreuer, Steffen / Kohlhaas, Robert B. / Nellen, Simon / Liebermeister, Lars / Globisch, Bjorn / Schell, Martin / Semtsiv, Mykhaylo P. / Masselink, W. Ted et al. | 2019
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Multi-wavelength Reflectivity Monitoring on Growth of AlN on SiIyechika, Yasushi / Tsukui, Masayuki / Miyano, Kiyotaka / Takahashi, Hideshi et al. | 2019
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High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN HeterostructureLyu, Qifeng / Jiang, Huaxing / Lu, Xing / Lau, Kei May et al. | 2019
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Expansion of Solid-phase Interactions between Carbon and Metals: Layer Exchange for Multilayer Graphene on InsulatorNakajima, Yoshiki / Murata, Hiromasa / Suemasu, Takashi / Toko, Kaoru et al. | 2019
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Quasi-ballistic thermal phonon transport in nanostructured Si nanowiresNomura, Masahiro / Anufriev, Roman et al. | 2019
- 1
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Fabrication of c-AIN/a-Sapphire Templates by Sputtering and High-Temperature AnnealingHayashi, Yusuke / Fujikawa, Kaito / Uesugi, Kenjiro / Shojiki, Kanako / Miyake, Hideto et al. | 2019
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Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All Around DevicesLoo, R. / Vohra, A. / Porret, C. / Hikavyy, A. / Rosseel, E. / Schaekers, M. / Capogreco, E. / Shimura, Y. / Kohen, D. / Tolle, J. et al. | 2019
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Hydrogen in semiconducting oxidesSelim, Farida et al. | 2019
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Sub-50 kHz Linewidth $1.55\ \mu \mathrm{m}$ Quantum Dot Distributed Feedback LasersBecker, Annette / Septon, Tali / Gosh, Sutapa / Shtendel, Gal / Sichkovskyi, Vitalii / Schnabel, Florian / Sengul, Anna / Bjelica, Marko / Witzigmann, Bernd / Eisenstein, Gadi et al. | 2019
- 1
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Vapor-Solid Selective Area Molecular Beam Epitaxy and N-Type Doping of Catalyst-Free GaAs:Si Nanowires on SiliconRuhstorfer, Daniel / Mejia, Simon / Riedl, Hubert / Finley, Jonathan James / Koblmuller, Gregor et al. | 2019
- 1
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Improvement of channel mobility and reliability in GaN-MOSFETsKuraguchi, M. / Kajiwara, Y. / Kato, D. / Hikosaka, T. / Ono, H. / Shindome, A. / Mukai, A. / Nunoue, S. et al. | 2019
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Highly efficient and fabrication-tolerant InP polarization rotator-splitterKeyvaninia, Shahram / Boerma, Hendrik / Wossner, Markus / Ganzer, Felix / Runge, Patrick / Schell, Martin et al. | 2019
- 1
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Exciton Diffusion in hBN-encapsulated Monolayer MoSe2Hotta, Takato / Higuchi, Syohei / Uchiyama, Yosuke / Ueno, Keiji / Watanabe, Kenji / Taniguchi, Takashi / Shinohara, Hisanori / Kitaura, Ryo et al. | 2019
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Resistively detected-NMR in triple-gate quantum point contact: magnetic field dependenceNoorhidayati, Annisa / Fauzi, Mohammad Hamzah / Maeda, Shunta / Sato, Ken / Nagase, Katsumi / Hirayama, Yoshiro et al. | 2019
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Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic fieldHarrysson Rodrigues, Isabel Hanna / Niepce, David / Moschetti, Giuseppe / Pourkabirian, Arsalan / Schleeh, Joel / Bauch, Thilo / Grahn, Jan et al. | 2019
- 1
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Resonant-Cavity Infrared Detector (RCID) with Very Thin AbsorberCanedy, Chadwick L. / Bewley, William W. / Merritt, Charles D. / Kim, Chul Soo / Kim, Mijin / Tomasulo, Stephanie / Warren, Michael V. / Jackson, Eric M. / Nolde, Jill A. / Affouda, Chaffra A. et al. | 2019
- 1
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Structural and optical properties of GaAs film grown on a glass substrate using a large-grained Ge seed layer for solar cell applicationsNishida, Takeshi / Moto, Kenta / Suemasu, Takashi / Toko, Kaoru et al. | 2019
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Experimental Observation of Rectification Around 280 GHz Wave in the GaAsSb/InGaAs Backward Diode Rectenna Monolithically Integrated with a Bow-Tie AntennaSuhara, Michihiko / Nakanishi, Masataka / Kitakado, Shintaro / Asakawa, Kiyoto / Sato, Masaru / Takahashi, Tsuyoshi / Kawaguchi, Kenichi / Okamoto, Naoya et al. | 2019
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Development of Hall Effect Sensor on AlGaN/GaN FinFET StructureHuo, Lili / Liang, Yung C / Gong, Xiao et al. | 2019
- 1
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Room-Temperature Electrically Pumped InP-based $1.3\boldsymbol{\mu} \mathbf{m}$ Quantum Dot Laser on on-axis (001) SiliconLuo, Wei / Xue, Ying / Shi, Bei / Zhu, Si / Lau, KeiMay et al. | 2019
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Electron selective contact for high efficiency core-shell nanowire solar cellRaj, Vidur / Vora, Kaushal / Li, Lily / Fu, Lan / Tan, Hark Hoe / Jagadish, Chennupati et al. | 2019
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Zinc Oxide Grown by ALD - from Heavily $n$-type to $p$-type MaterialGuziewicz, Elzbieta / Przezdziecka, Ewa / Krajewski, Tomasz A. et al. | 2019
- 1
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Deep-Level Defect Investigation of Si-Doped $\beta$-Ga2O3 Homoepitaxial Films Grown by Halide Vapor Phase EpitaxyNakano, Yoshitaka / Toyotome, Akira et al. | 2019
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Ga2O3 Power Schottky Barrier Diodes and Transistors: Design Principles and Experimental ValidationXing, Huili Grace / Li, Wenshen / Hu, Zongyang / Tanen, Nicholas / Jinno, Riena / Nomoto, Kazuki / Jena, Debdeep et al. | 2019
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Characterization of Silicon Nitride Capping Dielectrics on AlGaN/GaN/Silicon Substrate HEMT Structures with a Mercury ProbeBoles, Timothy / Struble, Wayne / Cueva, Gabriel / Hillard, Robert J. / Ye, Win / Byrnes, John / Hoglund, Jonny et al. | 2019
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GaN Substrates of the Highest Structural QualitySochacki, Tomasz et al. | 2019
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Electronic structure analysis of core structures of threading dislocations in GaNNakano, Takashi / Chokawa, Kenta / Araidai, Masaaki / Shiraishi, Kenji / Oshiyama, Atsushi / Kusaba, Akira / Kangawa, Yoshihiro / Tanaka, Atsushi / Honda, Yoshio / Amano, Hiroshi et al. | 2019
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Light-emitting InAs nanowires grown by MOVPE directly on flexible plastic substratesKhayrudinov, Vladislav / Haggren, Tuomas / Remennyy, Maxim / Alekseev, Prokhor / Matveev, Boris / Lipsanen, Harri et al. | 2019
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Low Noise Monolithically Integrated Membrane DFB Laser on SiliconPogoretskiy, Vadim / van der Tol, Jos / Jiao, Yuqing et al. | 2019
- 1
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Effects of thermal annealing on film quality of InAs-On-Insulator structures fabricated by Smart Cut methodSumita, Kei / Takeyasu, Jun / Kato, Kimihiko / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2019
- 1
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High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage TechniqueHan, Ping-Cheng / Yang, Chih-Yi / Lee, Ming-Wen / Wu, Jui-Sheng / Wu, Chia-Hsun / Chang, Edward Yi et al. | 2019
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Control of absorption properties of MEMS terahertz bolometers using metamaterialsNiu, Tianye / Qiu, Boqi / Zhang, Ya / Hirakawa, Kazuhiko et al. | 2019
- 1
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Superconductor/Semiconductor Devices for Majorana Zero ModesFornieri, Antonio / Whiticar, Alexander M. / Setiawan, F. / Marin, Elias Portoles / Drachmann, Asbjorn C. C. / Keselman, Anna / Gronin, Sergei / Thomas, Candice / Wang, Tian / Kallaher, Ray et al. | 2019
- 1
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Thermal dependence of the emission linewidth of $1.52-\mu \mathrm{m}$ single mode InAs/InP quantum dot lasersDuan, J. / Dong, B. / Huang, H. / Lu, Z. G. / Poole, P. J. / Grillot, F. et al. | 2019
- 1
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Effects of Ga-OH Bond at Initial GaN Surface on Electrical Characteristics of SiO2/GaN InterfaceUenuma, Mutsunori / Ando, Ryota / Furukawa, Masaaki / Ishikawa, Yasuaki / Uraoka, Yukiharu et al. | 2019
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Improvement of External Quantum Efficiency of C60/ZnPc Organic Photovoltaic Cells by Polymerization between C60 moleculesMatoba, Yuki / Kato, Masahiro / Watanabe, Shinta / Okamoto, Koichi / Nakaya, Masato / Onoe, Jun et al. | 2019
- 1
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High efficiency 100-nm-sized InGaN/GaN active region fabricated by neutral-beam-etching and GaN regrowth for directional micro-LEDZhang, Kexiong / Takahashi, Tokio / Ohori, Daisuke / Cong, Guangwei / Endo, Kazuhiko / Kumagai, Naoto / Samukawa, Seiji / Shimizu, Mitsuaki / Wang, Xuelun et al. | 2019
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High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi SubstrateBesancon, Claire / Decobert, Jean / Le Goec, Jean-Pierre / Vaissiere, Nicolas / Dupre, Cecilia / Muffato, Viviane / Fournel, Frank / Jany, Christophe / Bassani, Franck / David, Sylvain et al. | 2019
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InAs/InP QD and InGaAsP/InP QW comb lasers for $> 1$ Tb/s transmissionZander, Marlene / Rehbein, Wolfgang / Mohrle, Martin / Breuer, Steffen / Franke, Dieter / Bimberg, Dieter et al. | 2019
- 1
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Persistent resonance frequency shift of MoS2 mechanical resonator by laser irradiationInoue, Taichi / Endo, Takahiko / Takei, Kuniharu / Arie, Takayuki / Miyata, Yasumitsu / Akita, Seiji et al. | 2019
- 1
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Pressure characters of defects in hexagonal boron nitride flakesXue, Yongzhou / Dou, Xiuming / Sun, Baoquan et al. | 2019
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Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN -Uedono, Akira / Egger, Werner / Hugenschmidt, Christoph / Ishibashi, Shoji et al. | 2019
- 1
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A Sub-THz RTD-pair Oscillator with Enhanced RF Output Power CharacteristicsKim, Maengkyu / Yang, Kyounghoon et al. | 2019
- 1
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Luminescence efficiency of hexagonal boron nitrideBarjon, Julien / Plaud, Alexandre / Sponza, Lorenzo / Schue, Leonard / Stenger, Ingrid / Fossard, Frederic / Watanabe, Kenji / Taniguchi, Takashi / Ducastelle, Francois / Loiseau, Annick et al. | 2019
- 1
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Green Semipolar ($11\overline{2}2$) InGaN Micro-Light-Emitting-Diodes on ($11\overline{2}2$) GaN/Sapphire TemplateWong, Matthew S. / Khoury, Michel / Li, Hongjian / Bonef, Bastien / Taylor, Aidan A. / Zhang, Haojun / De Mierry, Philippe / Nakamura, Shuji / DenBaars, Steven P. et al. | 2019
- 1
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Investigation of type-II superlattices InAs/InAsSb photoconductor system by $8\times 8\quad \mathrm{k}\cdot \mathrm{p}$ model and application of localization landscape theory for transportWu, Yuh-Renn / Tsai, Tsung-Yin / Wu, Chaohsin / Michalczewski, Krystian / Martyniuk, Piotr et al. | 2019
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AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots and Its Optical CharacteristicsKorkerdsantisuk, Thanadul / Tharawatcharasart, Katanyu / Zon / Thainoi, Supachok / Kiravittaya, Suwit / Tandaechanurat, Aniwat / Nuntawong, Noppadon / Sopitpan, Suwat / Yordsri, Visittapong / Thanachayanont, Chanchana et al. | 2019
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Semi-ballistic thermal phonon transport in Sil-xGex nanowiresOkamoto, Noboru / Yanagisawa, Ryoto / Alam, Md. Mahfuz / Sawano, Kentarou / Kurosawa, Masashi / Nomura, Masahiro et al. | 2019
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Two-dimensional photonic crystal phosphors for efficient and polarization-insensitive excitationLee, Tae-Yun / Lee, Jongho / Park, Yeonsang / Cho, Kyung-Sang / Kim, Myeong-Eun / Min, Kyungtaek / Jeon, Heonsu et al. | 2019
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Picosecond spin relaxation in GaSb/AlSb multiple quantum wells with a $1.55-\boldsymbol{\mu} \mathbf{m}$ energy band gapNakamura, Yuichi / Li, Lianhe / Kamezaki, Takuya / Yamada, Kizuku / Linfield, Edmund / Tackeuchi, Atsushi et al. | 2019
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Resonant Enhancement of Band-to-band Tunneling in In-plane MoS2/WS2Heterojunction Tunnel TransistorsKuroda, Tatsuya / Hashimoto, Futo / Mori, Nobuya et al. | 2019
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Ultralow Loss Polaritons in Isotopically Pure Hexagonal Boron NitrideGiles, A.J. / Iyer, G. R. S. / Sunku, S. S. / Folland, T. G. / Liu, S. / Ellis, C.T. / Tischler, J.G. / Owrutsky, J.C. / Edgar, J. H. / Basov, D. N. et al. | 2019
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Quantification of external quantum efficiency for near-band-edge emission of $h$-BN bulk crystals under photo-excitationKojima, Kazunobu / Watanabe, Kenji / Taniguchi, Takashi / Chichibu, Shigefusa F. et al. | 2019
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Heat transport in GaAs membranes studied by using a GaAs MEMS thermal sensorZhang, Ya / Qiu, Boqi / Du, Shaoqing / Nagai, Naomi / Hirakawa, Kazuhiko et al. | 2019
- 1
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Detection of Nonradiative Recombination Levels in UV-LEDs by Irradiating Below-Gap Excitation LightKamata, Norihiko / Matsuda, Ken / Shirai, Sota / Honda, Zentaro / Hirayama, Hideki et al. | 2019
- 1
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The growth of boron nitride on poly-crystalline Ni by plasma-assisted molecular beam epitaxyHuang, Wei-Cyuan / Huang, Chia-Wei / Chen, Sheng-Chung / Yu, Ing-Sung / Li, Hui / Cheng, Hung-Hsiang et al. | 2019
- 1
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Growth of InGaAs solar cells on InP(001) miscut substrates using solid-source molecular beam epitaxyIshitsuka, Yuki / Oshima, Ryuji / Sugaya, Takeyoshi / Okano, Yoshinobu et al. | 2019
- 1
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Simultaneous extraction of Rashba and Dresselhaus spin-orbit coefficients in GaAs/AlGaAs (110) two-dimensional electron gasIizasa, Daisuke / Kitamura, Shu / Sato, Dai / Iba, Satoshi / Ohno, Yuzo / Karube, Shutaro / Nitta, Junsaku / Kohda, Makoto et al. | 2019
- 1
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Fabrication of Resonant-Tunneling-Diode Terahertz Oscillators Using Rectangular Cavity Resonators and Bow-Tie Antennas for High Output PowersTanaka, Hiroki / Kobayashi, Kazunori / Izumi, Ryunosuke / Suzuki, Safumi / Asada, Masahiro et al. | 2019
- 1
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The underlying signatures of the spin- and momentum-forbidden dark exciton states in the temperature-dependent photoluminescences from WSe2 monolayersPeng, Guan-Hao / Lo, Ping-Yuan / Li, Wei-Hua / Huang, Yan-Chen / Chen, Yan-Hong / Lee, Chi-Hsuan / Yang, Chih-Kai / Cheng, Shun-Jen et al. | 2019
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Fabrication of Transparent Solar Cell with Atomically Thin Layered MaterialsHe, Xing / Yamaguchi, Yoshiki / Kaneko, Toshiro / Kato, Toshiaki et al. | 2019
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Observation of a.c. Josephson effect in gate tunable Josephson junction on topological insulator (Bi0.2Sb0.8)2 Te3 filmsTakeshige, Yuusuke / Matsuo, Sadashige / Stewart Deacon, Russell / Ueda, Kento / Sato, Yosuke / Zhao, Yi-Fan / Zhang, Ling / Chang, Cui-Zu / Ishibashi, Koji / Tarucha, Seigo et al. | 2019
- 1
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Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga2O3 Films on $(\overline{2}01)\ \beta$-Ga2O3 by Laser Molecular Beam EpitaxyChen, Xuanhu / Ye, Jiandong / Gu, Shulin / Zhang, Rong / Zheng, Youdou et al. | 2019
- 1
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Smart Stack Technology for III-V/Si Multi-Junction Solar CellsMizuno, Hidenori et al. | 2019
- 1
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Horn-Shaped Metal-Clad Modulator Coupled to InP WaveguideWang, Yuguang / Watanabe, Mitsuhiro / Xiao, Yi / Tanemura, Takuo / Nakano, Yoshiaki et al. | 2019
- 1
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Numerical Analysis of III-V/Si Hybrid MOS Microdisk ModulatorOhno, Shuhei / Takagi, Shinichi / Takenaka, Mitsuru et al. | 2019
- 1
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Effects of Channel Scaling on Electron Transport Properties of Sb-based HEMTsKishimoto, N. / Endoh, Y. / Hayashi, T. / Hiraoka, M. / Machida, R. / Endoh, A. / Fujishiro, H. I. et al. | 2019
- 1
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Kinetical limitations of h-BN MOVPE growthPakula, Krzysztof / Dabrowska, Aleksandra / Tokarczyk, Mateusz / Binder, Johannes / Borysiuk, Jolanta / Bozek, Rafal / Kowalski, Grzegorz / Wysmolek, Andrzej / Stepniewski, Roman et al. | 2019
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Hydride vapor phase epitaxy reactor for bulk GaN growthVoronenkov, Vladislav / Bochkareva, Natalia / Gorbunov, Ruslan / Zubrilov, Andrey / Kogotkov, Viktor / Latyshev, Philippe / Lelikov, Yuri / Leonidov, Andrey / Shreter, Yuri et al. | 2019
- 1
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The Output Power Characteristics of the Series-connected RTD PairKim, Maengkyu / Yang, Kyounghoon et al. | 2019
- 1
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Sputtering Ambient Effects on Functionality of Al-doped Gallium Oxide Films for Deep-Ultraviolet DetectorsChen, Po-Wei / Huang, Shiau-Yuan / Wang, Chao-Chun / Hsiao, Po-Wen / Yuan, Shuo-Huang / Wuu, Dong-Sing et al. | 2019
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GaSb/GaAs quantum nanostructures for intermediate band solar cell under high sunlight concentrationOteki, Yusuke / Shoji, Yasushi / Miyashita, Naoya / He, Yilun / Okada, Yoshitaka et al. | 2019
- 1
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Growth of Ga2(O,S)3 Alloy Films on YSZ Substrates by Mist Chemical Vapor DepositionAkaiwa, Kazuaki / Hiroe, Tsubasa / Nagano, Moe / Abe, Tomoki / Kado, Motohisa / Ichino, Kunio et al. | 2019
- 1
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Performance Limits of 2H-GaN Vertical Superjunction Schottky rectifiers, MOSFETs and HEMTsZhou, Xiang / Chow, T. Paul et al. | 2019
- 1
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Topological semimetals in InAs/GaInSb superlattices at room temperaturePatrashin, Mikhail / Sekine, Norihiko / Akahane, Kouichi / Kasamatsu, Akifumi / Hosako, Iwao et al. | 2019
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Crystal Structures and Surface Plasmon Properties of GaZnO NanostructuresYao, Yu-Feng / Chou, Keng-Ping / Chen, Chi-Chung / Tu, Charng-Gan / Li, Tsai-Pei / Cheng, Yung-Chen / Chang, Wen-Yen / Wang, Yao-Tseng / Tse, Wai Fong / Kiang, Yean-Woei et al. | 2019
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Rectified Schottky diodes that use low-cost carbon paste/InGaZnO junctionsWu, Chia-Ling / Hsu, Fu-Fan / Huang, Chun-Ying et al. | 2019
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Radiative and Nonradiative Tunneling in Nanowire Light-Emitting DiodesMotohisa, Junichi / Kameda, Hiroki / Sasaki, Masahiro / Tomioka, Katsuhiro et al. | 2019
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Ultraflexible Biosignal Amplifier Based on Organic Thin-Film TransistorsUemura, Takafumi / Sekitani, Tsuyoshi et al. | 2019
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Reflectivity of hexagonal Boron-Nitride in deep UVElias, Christine et al. | 2019
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Highly rectifying contacts on (In,Ga)2O3 thin films grown by PLDSplith, Daniel / Hassa, Anna / Schlupp, Peter / von Wenckstern, Holger / Grundmann, Marius et al. | 2019
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Effect of Buffer Layer on Improvement of SnO2 Thin Film on Sapphire Substrate Formed by Mist Chemical Vapor DepositionWin, Thant Zin / Furukawa, Takumi / Tanaka, Yudai / Okita, Koshi / Sue, Koji / Yatabe, Zenji / Nakamura, Yusui et al. | 2019
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In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowiresSugitani, Kanya / Sasaki, Takuo / Tomohiro, Uesugi / Takahasi, Masamitu et al. | 2019
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Tuning Lasing Emission towards Long Wavelengths in GaAs-(In, Al)GaAs Core-Multishell Nanowires on SiliconStettner, Thomas / Schmiedeke, Paul / Thurn, Andreas / Doeblinger, Markus / Bissinger, Jochen / Ruhstorfer, Daniel / Finley, Jonathan J. / Koblmueller, Gregor et al. | 2019
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Investigation of second harmonic generation efficiency in ultrahigh-Q SiC photonic crystal nanocavitiesKim, Heungjoon / Asano, Takashi / Song, Bong-Shik / Nodal, Susumu et al. | 2019
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Suppressing beam deflections by introducing phosphorous in the GaAs-based terahertz MEMS bolometersQiu, Boqi / Zhang, Ya / Akahane, Kouichi / Nagai, Naomi / Hirakawa, Kazuhiko et al. | 2019
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Long-term stability of organic physically unclonable function for IoE securityKuribara, Kazunori / Nobeshima, Taiki / Takei, Atsushi / Kozasa, Takehito / Uemura, Sei / Yoshida, Manabu et al. | 2019
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Fabrication of CH3NH3PbBr3 Based Perovskite Single Crystal Arrays by Spin-coating Method Using Hydrophobic Patterned SubstrateAbe, Ryogo / Takeuchi, Keita / Suzuki, Asuka / Watanabe, Kosuke / Kikuchi, Akihiko et al. | 2019
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Synthesis and characterization of AlTiO films by mist-CVDYatabe, Zenji / Nishiyama, Koshi / Tsuda, Takaaki / Nishimura, Kazuki / Nakamura, Yusui et al. | 2019
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Below-bandgap photoluminescence from GaAsRoca, Ronel Christian / Fukui, Kosei / Mizuno, Hiroto / Suzuki, Mikihito / Kamiya, Itaru et al. | 2019
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Organic Sensor Array Distributed in Flexible and Curved SurfaceSakai, Masatoshi / Miyai, Yuichi / Okada, Yugo / Sadamitsu, Yuichi / Hashimoto, Yuta / Onodera, Nozomi / Kudo, Kazuhiro et al. | 2019
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Growth of Ga2O3 Regular Column Structures by Halide Vapour Phase Epitaxy: $\alpha$- and $\varepsilon$-phase RelationNikolaev, V.I. / Pechnikov, A.I. / Nikolaev, V.V. / Sheglov, M.P. / Chikiryaka, A.V. / Stepanov, S.I. et al. | 2019
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Ka band LNA and PA based on 100 nm GaN/Si HEMT processTong, Xiaodong / Zhang, Shiyong / Zheng, Penghui / Xu, Jianxing / Wang, Rong et al. | 2019
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Superpower Transistor Consisting of Only LED and Silicon Solar Cell — Its Application to Electric Vehicle Drive ControlOkamoto, Kensho / Nakano, Ituo / Hosokawa, Masami / Matsushita, Fumio et al. | 2019
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Transparent $\mathbf{Ni}_{\mathbf{x}}\mathbf{Cd}_{1-\mathbf{x}}\mathbf{O}_{1+\boldsymbol{\delta}}$ alloy thin films with bipolar conductivityLiu, Chao Ping / Ebgo, Kingsley O. / Ho, Chun Yuen / Walukiewicz, Wladek / Yu, Kin Man et al. | 2019
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Dynamic $\mathrm{R}_{\mathrm{ON}}$ in $\beta$-Ga2O3 MOSFET Power DevicesMoule, Taylor / Singh, Manikant / Pomeroy, James / Karboyan, Serge / Uren, Michael J. / Wong, Man Hoi / Sasaki, Kohei / Kuramata, Akito / Yamakoshi, Shigenobu / Higashiwaki, Masataka et al. | 2019
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The Josephson effect in InAs quantum wells with the spin Hall effectNakamura, Taketomo / Hashimoto, Yoshiaki / Katsumoto, Shingo et al. | 2019
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Real space imaging of the quantum-Hall incompressible states influenced by the strong disorderWang, Yihao / Hashimoto, Katsushi / Hirayama, Yoshiro et al. | 2019
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Molecular Beam Epitaxial Growth of InSb and AlSb Heterostructure on InSb SubstratesOunpipat, Jirapat / Rattanawongnara, Engrhyt / Zon / Thainoi, Supachok / Kiravittaya, Suwit / Tandaechanurat, Aniwat / Nuntawong, Noppadon / Sopitpan, Suwat / Yordsri, Visittapong / Thanachayanont, Chanchana et al. | 2019
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Low temperature growth of h-BN on graphene via molecular beam epitaxyHeilmann, Martin / Prikhodko, Alexander S. / Hanke, Michael / Bashouti, Muhammad Y. / Borgardt, Nikolai I. / Riechert, Henning / Lopes, Marcelo J. et al. | 2019
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Low resistivity ohmic contacts to n-ZnSe by utilizing a novel regrowth techniqueJanssen, J. / Hartz, F. / Huckemann, T. / Schreiber, L. R. / Grutzmacher, D. / Pawlis, A. et al. | 2019
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Coherent control of a GaAs quantum dot spin qubit operated in a feedback loopNakajima, Takashi et al. | 2019
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Multi-band valley-protected topological edge states in GaAs-based nanophononic crystals with complete phononic bandgapsKim, Ingi / Sun, Zhaoyin / Arakawa, Yasuhiko / Iwamoto, Satoshi et al. | 2019
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Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBECallsen, Gordon / Tamariz, Sebastian / Grandjean, Nicolas et al. | 2019
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Carbon nanowalls/diamond heterojunctions as novel photo-switching memory devicesImai, Yuuta / Ueda, Kenji / Itou, Hideharu / Mizuno, Yuki / Asano, Hidefumi et al. | 2019
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Growth of Single Crystalline c-In2O3(111) Layers on Off-Axis c-Plane Sapphire Substrates by Halide Vapor Phase EpitaxySaimoto, Yuya / Nagai, Kenta / Nakahata, Hidetoshi / Konishi, Keita / Kumagai, Yoshinao et al. | 2019
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Spin Blockade and Magnetoresistance in Double Quantum Well Diode with Inverted Electric FieldHashimoto, Yoshiaki / Ke, Tong / Nakamura, Taketomo / Katsumoto, Shingo et al. | 2019
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Irradiation Effects on Induced Electron Conductivity in an un-doped GaAs/AlGaAs Quantum Well Hall BarFujita, T. / Hayashi, R. / Kohda, M. / Ritzmann, J. / Ludwig, A. / Nitta, J. / Wieck, A.D. / Oiwa, A. et al. | 2019
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Towards semiconductor-superconductor hybrid qubits based on InAs/Al core/shell nanowiresZellekens, P. / Deacon, R. / Schlor, S. / Perla, P. / Liebisch, P. / Bennemann, B. / Lepsa, M. / Weides, M. / Ishibashi, K. / Grutzmacher, D. et al. | 2019
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High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminated GaN(0001) surfaceYamada, Shinya / Goto, Yuki / Tatebayashi, Jun / Ichikawa, Shuhei / Fujiwara, Yasufumi / Hamaya, Kohei et al. | 2019
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Evaluate Fixed Charge and Oxide Trapped Charge on SiO2/GaN MOS Structure Before and After Post AnnealingFurukawa, Masaaki / Uenuma, Mutsunori / Ishikawa, Yasuaki / Uraoka, Yukiharu et al. | 2019
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Selective-area MOVPE growth of multi-$\lambda$ InGaAlAs-based MQWs on patterned InP-on-insulator substrateFujii, Takuro / Sato, Tomonari / Takeda, Koji / Kakitsuka, Takaaki / Matsuo, Shinji et al. | 2019
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Control of electron spin at spin-resolved quantum Hall edgesShimizu, Takase / Hashimoto, Yoshiaki / Nakamura, Taketomo / Endo, Akira / Katsumoto, Shingo et al. | 2019
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Crystal Phase Tuning in Planar Films of III-V SemiconductorsStaudinger, Philipp / Tappy, Nicolas / Mauthe, Svenja / Moselund, Kirsten / i Morral, Anna Fontcuberta / Schmid, Heinz et al. | 2019
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Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave ApplicationsSong, Wenjie / Zheng, Zheyang / Lei, Jiacheng / Wei, Jin / Yuan, Li / Chen, Kevin J. et al. | 2019
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Current injection and light confinement for UVB light emitting devices with graded p-AlGaNSato, Kosuke / Yasue, Shinji / Ogino, Yuya / Iwaya, Motoaki / Takeuchi, Tetsuya / Kamiyama, Satoshi / Akasaki, Isamu et al. | 2019
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Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depthIsawa, S. / Akashi, Y. / Matsumoto, A. / Akahane, K. / Matsushima, Y. / Ishikawa, H. / Utaka, K. et al. | 2019
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Bio-sensing of small peptides by open sandwich immunoassay on graphene FETsKanai, Yasusshi / Ohmuro-Matsuyama, Yuki / Tanioku, Masami / Ushiba, Shota / Ono, Takao / Inoue, Kouichi / Kimura, Masahiko / Ueda, Hiroshi / Matsumoto, Kazuhiko et al. | 2019
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In situ synchrotron X-ray reciprocal space mapping during InGaN/GaN heterostructure nanowire growthTomohiro, Uesugi / Sasaki, Takuo / Sugitani, Kanya / Takahasi, Masamitu et al. | 2019
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Transmission Characteristics of a Novel Waveguide Structure for Wavelength Division MultiplexingYamaguchi, Takuya / Horiba, Takahiro / Morifuji, Masato / Kondow, Masahiko et al. | 2019
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Adsorbtion of Oxygen and Hydrogen Atoms on the GaAs(110) SurfaceEckert, Dorothee Sophie / Bruckmann, Christian / Baraz, Sam / Eisele, Holger et al. | 2019
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Chalcogen passivation of GaAs(111)B surfacesSuga, Takayuki / Goto, Shunji / Ohtake, Akihiro / Nakamura, Jun et al. | 2019
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Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN layer regrowthKawabata, Shinsaku / Asubar, Joel Tacla / Tokuda, Hirokuni / Yamamoto, Akio / Kuzuhara, Masaaki et al. | 2019
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Halide Vapor Phase Epitaxy of $\alpha$-Ga2O3Oshima, Yuichi et al. | 2019
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Epitaxial Lift-Off of Ultrathin Heterostructures for Hot-Carrier Solar Cell ApplicationsGiteau, Maxime / Watanabe, Kentaroh / Sodabanlu, Hassanet / Miyashita, Naoya / Sugiyama, Masakazu / Cattoni, Andrea / Collin, Stephane / Guillemoles, Jean-Francois / Okada, Yoshitaka et al. | 2019
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Copyright Page| 2019
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Hexagonal Boron Nitride NanophotonicsDuong, Hanh et al. | 2019