Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL (Englisch)
- Neue Suche nach: Lacrevaz, T.
- Neue Suche nach: Flechet, B.
- Neue Suche nach: Farcy, A.
- Neue Suche nach: Torres, J.
- Neue Suche nach: Vo, T.T.
- Neue Suche nach: Bermond, C.
- Neue Suche nach: Cueto, O.
- Neue Suche nach: Defay, E.
- Neue Suche nach: Gros-Jean, M.
- Neue Suche nach: Blampey, B.
- Neue Suche nach: Angenieux, G.
- Neue Suche nach: Piquet, J.
- Neue Suche nach: de Crecy, F.
- Neue Suche nach: Lacrevaz, T.
- Neue Suche nach: Flechet, B.
- Neue Suche nach: Farcy, A.
- Neue Suche nach: Torres, J.
- Neue Suche nach: Vo, T.T.
- Neue Suche nach: Bermond, C.
- Neue Suche nach: Cueto, O.
- Neue Suche nach: Defay, E.
- Neue Suche nach: Gros-Jean, M.
- Neue Suche nach: Blampey, B.
- Neue Suche nach: Angenieux, G.
- Neue Suche nach: Piquet, J.
- Neue Suche nach: de Crecy, F.
In:
2006 International Interconnect Technology Conference
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78-80
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2006
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ISBN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL
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Beteiligte:Lacrevaz, T. ( Autor:in ) / Flechet, B. ( Autor:in ) / Farcy, A. ( Autor:in ) / Torres, J. ( Autor:in ) / Vo, T.T. ( Autor:in ) / Bermond, C. ( Autor:in ) / Cueto, O. ( Autor:in ) / Defay, E. ( Autor:in ) / Gros-Jean, M. ( Autor:in ) / Blampey, B. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.01.2006
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Format / Umfang:356457 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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The rise of the 3rd dimension for system intergrationBeyne, E. et al. | 2006
- 6
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Yield & Reliability challenges of BEOL InterconnectsTan, J.B. / Zhang, B.C. / Tang, T.J. / Perera, C. / Lim, Y.K. / Siew, Y.K. / Ee, Y.C. / Lu, W. / Liu, H. / Seet, C.S. et al. | 2006
- 9
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65nm Cu Integration and Interconnect Reliability in Low Stress K=2.75 SiCOHMcGahay, V. / Bonilla, G. / Chen, F. / Christiansen, C. / Cohen, S. / Cullinan-Scholl, M. / Demarest, J. / Dunn, D. / Engel, B. / Fitzsimmons, J. et al. | 2006
- 12
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Understanding integration damage to low-k films: mechanisms and dielectric behaviour at 100kHz and 4GHzIacopi, F. / Richard, O. / Van Aelst, J. / Mannaert, G. / Talanov, V.V. / Scherz, A. / Schwartz, A.R. / Bender, H. / Travaly, Y. / Brongersma, S.H. et al. | 2006
- 15
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Manufacturable Low Keff (Keff<2.5) Cu Interconnects by Selective / Low Damage Air Gap FormationHarada, T. / Takahashi, M. / Murakami, K. / Korogi, H. / Sasaki, T. / Hattori, T. / Ogawa, S. / Ueda, T. et al. | 2006
- 21
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BEOL Integration of Highly Damage -Resistant Porous Ultra Low-K Material Using Direct CMP and Via-first ProcessIijima, T. / Lin, Q. / Chen, S. / Labelle, C. / Fuller, N. / Ponoth, S. / Cohen, S. / Lloyd, J. / Dunn, D. / Muzzy, C. et al. | 2006
- 24
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Analysis of Plasma-Induced Modification of ULK and eULK Materials: Dual Damascene Processing Challenges for 45nm (K ⩽ 2.4) and Beyond BEOL TechnologiesFuller, N.C.M. / Worsley, M.A. / Nitta, S. / Dalton, T. / Tai, T.L. / Bent, S. / Magbitang, T. / Dubois, G. / Miller, R. / Volksen, W. et al. | 2006
- 27
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High Performance Band-Pass Filter Embedded into SoCs Using VLSI Backend Interconnects and High Resistivity Silicon SubstrateChen, C.C. / Chin, A. / Yang, M.T. / Liu, S. et al. | 2006
- 30
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Yield and Reliability of Cu Capped with CoWP using a Self-Activated ProcessGambino, J. / Wynne, J. / Gill, J. / Mongeon, S. / Meatyard, D. / Bamnolker, H. / Hall, L. / Li, N. / Hernandez, M. / Little, P. et al. | 2006
- 33
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Integration of multi-level self-aligned CoWP barrier compatible with high performance BEOLChhun, S. / Gosset, L.G. / Besling, W. / Van ypre, T. / Brun, Ph. / Ollier, E. / Mellier, M. / Imbert, G. / Jullian, S. / Margain, A. et al. | 2006
- 36
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New etch challenges for the 65-nm technology node Low-k integration using An enhanced Trench First Hard Mask architecturePosseme, N. / Maurice, C. / Brun, / Ollier, E. / Guillermet, M. / Verove, C. / Berger, T. / Fox, R. / Hinsinger, O. et al. | 2006
- 39
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On-Chip Copper-Based vs. Optical Interconnects: Delay Uncertainty, Latency, Power, and Bandwidth Density Comparative PredictionsGuoqing Chen, / Hui Chen, / Haurylau, M. / Nelson, N.A. / Albonesi, D.H. / Fauchet, P.M. / Friedman, E.G. et al. | 2006
- 42
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Low-k properties and integration processes enabling reliable interconnect scaling to the 32 nm technology nodeIkeda, A. / Travaly, Y. / Humbert, A. / Hoofman, R.J.O.M. / Li, Y.L. / Tokei, Zs. / Iacopi, F. / Michelon, J. / Bruynseraede, C. / Willegems, M. et al. | 2006
- 45
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Performance Trend in Three-Dimensional Integrated CircuitsHao Hua, / Mineo, C. / Schoenfliess, K. / Sule, A. / Melamed, S. / Davis, W.R. et al. | 2006
- 48
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A New Global Interconnect Paradigm: MIM Power-Ground Plane CapacitorsSekar, D.C. / Demaray, E. / Hongmei Zhang, / Kohl, P.A. / Meindl, J.D. et al. | 2006
- 51
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Advanced Preclean for Integration of PECVD SiOCH (k=2.5) Dielectrics with Copper Metallization Beyond 45nm TechnologyFu, X. / Forster, J. / Yu, J. / Gopalraja, P. / Bhatnagar, A. / Ahn, S. / Demos, A. / Ho, P. et al. | 2006
- 57
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Electron Scattering in Narrow Metal WiresGall, D. / Purswani, J.M. / Timochevskib, V. / Ke, Y. / Guo, H. et al. | 2006
- 60
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Low-loss LSI Interconnects on Novel "Partially Low-k Plugged Si Substrate" (PLP-Sub) for RF/ubiquitous ApplicationsHijioka, K. / Tanabe, A. / Ohtake, H. / Onodera, T. / Hayashi, Y. et al. | 2006
- 63
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High Performance High-k MIM Capacitor with Plug-in Plate (PiP) for Power Delivery Line Hige-Speed MPUsInoue, N. / Ohtake, H. / Kume, I. / Furutake, N. / Onodera, T. / Saito, S. / Tanabe, A. / Tagami, M. / Tada, M. / Hayashi, Y. et al. | 2006
- 66
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UV/EB Cure Mechanism for Porous PECVD/SOD Low-k SiCOH MaterialsNakao, S. / Ushio, J. / Ohno, T. / Hamada, T. / Kamigaki, Y. / Kato, M. / Yoneda, K. / Kondo, S. / Kobayashi, N. et al. | 2006
- 69
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Metallization in Memory Device: Present & FutureSang woo Lee, / Gil Heyun Choi, / Sung Tae Kim, / U-In Chung, / Joo Tae Moon, et al. | 2006
- 75
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Damage-Free Low-k Treatment Verified by a Novel Microwave MeasurementTsai, J.S. / Liang, M.C. / Lee, T.L. / Cher, L.C. / Shieh, J.H. / Lee, J.J. / Hwang, R.L. / Jang, S.M. / Liang, M.S. et al. | 2006
- 78
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Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOLLacrevaz, T. / Flechet, B. / Farcy, A. / Torres, J. / Vo, T.T. / Bermond, C. / Cueto, O. / Defay, E. / Gros-Jean, M. / Blampey, B. et al. | 2006
- 81
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Effect of CH4 plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodesAimadeddine, M. / Arnal, V. / Roy, D. / Farcy, A. / David, T. / Chevolleau, T. / Posseme, N. / Vitiello, J. / Chapelon, L.L. / Guedj, C. et al. | 2006
- 84
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Self Aligned Barrier Approach: Overview on Process, Module Integration and Interconnect Performance Improvement ChallengesGosset, L.G. / Chhun, S. / Guillan, J. / Gras, R. / Flake, J. / Daamen, R. / Michelon, J. / Haumesser, P.-H. / Olivier, S. / Decorps, T. et al. | 2006
- 89
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A metallurgical prescription for electromigration (EM) reliability improvment in scaled-down, Cu dual damascene interconnectsTada, M. / Abe, M. / Ohtake, H. / Furutake, N. / Tonegawa, T. / Motoyama, K. / Tohara, M. / Ito, F. / Ueki, M. / Takeuchi, T. et al. | 2006
- 92
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Evaluation and Numerical Simulation of Optimal Structural Designs for Reliable Packaging of Ultra Low K Process TechnologyHuang, T.C. / Peng, C.T. / Yao, C.H. / Huang, C.H. / Li, S.Y. / Liang, M.S. / Wang, Y.C. / Wan, W.K / Lin, K.C. / Hsia, C.C. et al. | 2006
- 95
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Stress Engineering in CuILow-k Interconnects by using UV-Cure of Cu Diffusion Barrier DielectricsGoto, K. / Kodama, D. / Suzumura, N. / Hashii, S. / Matsumoto, M. / Miura, N. / Furusawa, T. / Matsuura, M. / Asai, K. et al. | 2006
- 98
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Electromigration Results with Large Sample Size for Dual Damascene Structures in a Copper/CVD Low-k Dielectric TechnologyFilippi, R.G. / Christiansen, C. / Li, B. / Gill, J. / McLaughlin, P.S. / Demarest, J.J. / Wang, P.-C. et al. | 2006
- 101
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Reliability Improvement by Adopting Ti-barrier Metal B for Porous Low-k IL StructureSakata, A. / Yamashita, S. / Omoto, S. / Hatano, M. / Wada, J. / Higashi, K. / Yamaguchi, H. / Yosho, T. / lmamizu, K. / Yamada, M. et al. | 2006
- 107
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Electromigration Reliability of 60 nm Dual Damascene Cu InterconnectsPyun, J.W. / Baek, W.-C. / Denning, D. / Knorr, A. / Smith, L. / Pfeifer, K. / Ho, P.S. et al. | 2006
- 110
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New low k a-SiC:H dielectric barrier for advanced interconnectsFavennec, L. / Jousseaume, V. / Zenasni, A. / Bouchu, D. / Passemard, G. et al. | 2006
- 113
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Effect of Cu Line Capping Process on Stress Migration ReliabilityYeh, M.-S. / Chang, H.L. / Shih, C.H. / Lin, C.J. / KO, T. / Su, H.W. / Chen, C.H. / Tsai, M.H. / Shue, W.S. / Yu, C.H. et al. | 2006
- 116
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3D Crystalline Structures of Stress Induced Voiding in Cu Interconnects by Focused Ion Beam and Electron Backscattered DiffractionHyo-Jong Lee, / Heung Nam Han, / Suk Hoon Kang, / Jeong-Yun Sun, / Do Hyun Kim, / Kyu Hwan Oh, et al. | 2006
- 119
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A Study of Water Absorption Induced-Dielectric Constant Increase and Its Suppression on Copper Damascene Interconnect Structure with Porous Low-k (k=2.3) DielectricsNakamura, N. / Matsunaga, N. / Higashi, K. / Shimada, M. / Miyajima, H. / Yamada, M. / Enomoto, Y. / Hasegawa, T. / Shibata, H. et al. | 2006
- 122
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Carbon-Rich SiOCH Films with Hydrocarbon Network Bonds for Low-k Dielectrics: First-Principles InvestigationTajima, N. / Ohno, T. / Hamada, T. / Yoneda, K. / Kobayashi, N. / Shinriki, M. / Miyazawa, K. / Sakota, K. / Hasaka, S. / Inoue, M. et al. | 2006
- 125
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Highly Reliable Interface of Self-aligned CuSiN process with Low-k Sic barrier dielectric (k3.5) for 65nm node and beyondUsami, T. / Ide, T. / Kakuhara, Y. / Ajima, Y. / Ueno, K. / Maruyama, T. / Yu, Y. / Apen, E. / Chattopadhyay, K. / van Schravendijk, B. et al. | 2006
- 128
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New CMP Process that Inhibits Delamination of Copper Low-k IntegrationShibuki, S. / Sakairi, T. / Fujii, M. / Furui, R. / Arakawa, S. / Negoro, Y. / Hirata, T. / Hasegawa, K. / Okamoto, T. / Nishimura, H. et al. | 2006
- 131
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Simulation of signal propagation with prospective air gap architectures as potential solutions to achieve Moore's law for the 32 nm node and below Cu Introduction of ULKBlampey, B. / Gallitre, M. / Farcy, A. / Gosset, L.G. / Bermond, C. / Flechet, B. / Torres, J. et al. | 2006
- 134
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Integration of air gaps based on selective ozone/TEOS deposition into a multi layer metallization schemeStich, A. / Gabric, Z. / Pamler, W. / Schindler, G. / Traving, M. / Engelhardt, M. et al. | 2006
- 137
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Novel CMP Barrier Slurry for Integrated Porous Low-k Technology of 45nm NodeKuo, H.H. / Song, J.Y. / Lin, K.C. / Chou, C.C. / Chen, Y.H. / Jeng, S.M. / Yu, C.H. / Liang, M.S. et al. | 2006
- 140
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Effect of Porosity on Charge Transport in Porous Ultra-Low-k DielectricsChangsoo Hong, / Milor, L. et al. | 2006
- 143
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Non-destructive electrical characterization of low-k sidewall damage before metallization by a near-field scanned microwave probeSchwartz, A.R. / Talanov, V.V. / Scherz, A. / Kastenmeier, B. / White, B. / Satyanarayana, S. et al. | 2006
- 146
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Laser Spike Annealing: A Novel Post-Porosity Treatment for Significant Toughening of Low-k OrganosilicatesVolksen, W. / Dubois, G. / Kellock, A. / Magbitang, T.P. / Miller, R.D. / Cohen, S. / Simonyi, E.E. / Ramirez, L. / Yun Wang, et al. | 2006
- 149
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UV Curing Effects on Glass Structure and Mechanical Properties of Organosilicate Low-k Thin FilmsGage, D.M. / Guyer, E.P. / Stebbins, J.F. / Zhenjiang Cui, / Al-Bayati, A. / Demos, A. / MacWilliams, K.P. / Dauskardt, R.H. et al. | 2006
- 152
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A Novel CoWP Cap Integration for Porous Low-WCu Interconnects With NH3 Plasma Treatment and Low-k Top (LKT) Dielectric StructureKawahara, N. / Tagami, M. / Withers, B. / Kakuhara, Y. / Imura, H. / Ohto, K. / Taiji, T. / Arita, K. / Kurokawa, T. / Nagase, M. et al. | 2006
- 155
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Growth Behavior of Self-Formed Barrier Using Cu-Mn Alloys at 350 to 600oCIijima, J. / Haneda, M. / Koike, J. et al. | 2006
- 161
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Cu Alloy Metallization for Self-Forming Barrier ProcessKoike, J. / Haneda, M. / Iijima, J. / Wada, M. et al. | 2006
- 164
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Direct CMP on Porous Low-k Film for Damage-less Cu IntegrationKondo, S. / Fukaya, K. / Ohashi, N. / Miyazaki, T. / Nagano, H. / Wada, Y. / Ishibashi, T. / Kato, M. / Yoneda, K. / Soda, E. et al. | 2006
- 167
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Misalignment-Free Air-Gap (MFAG) Interconnect with Via Base Structure for 45/65nm Node and BelowNoguchi, J. / Oshima, T. / Matsumoto, T. / Uno, S. / Sato, K. / Konishi, N. / Saito, T. / Miyauchi, M. / Hotta, S. / Aoki, H. et al. | 2006
- 170
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Polymer Pillars as Optical I/O for Gigascale Chips using Mirror-Terminated WaveguidesOgunsola, O.O. / Thacker, H.D. / Bachim, B.L. / Bakir, M.S. / Gaylord, T.K. / Meindl, J.D. et al. | 2006
- 175
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Evolution of Cu Electro-Deposition Technologies for 45nm and BeyondShue, W.S. et al. | 2006
- 178
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Impact of Cu contacts on front-end performance: a projection towards 22nm nodeDemuynck, S. / Nackaerts, A. / Van den bosch, G. / Chiarella, T. / Ramos, J. / Tokei, Zs. / Vaes, J. / Heylen, N. / Beyer, G.P. / Van Hove, M. et al. | 2006
- 181
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Water and Copper Contamination in SiOC:H Damascene: Novel Characterization Methodology based on Triangular Voltage Sweep MeasurementsCiofi, I. / Tokei, Z. / Visalli, D. / Van Hove, M. et al. | 2006
- 184
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Robust Low-k Diffusion Barrier (k=3.5) for 45-nm Node Low-k (k=2.3)/Cu IntegrationYoneda, K. / Kato, M. / Nakao, S. / Kondo, S. / Matsuki, N. / Matsushita, K. / Ohara, N. / Kaneko, S. / Fukazawa, A. / Kimura, T. et al. | 2006
- 187
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Physical, Electrical, and Reliability Characterization of Ru for Cu InterconnectsYang, C.-C. / Spooner, T. / Ponoth, S. / Chanda, K. / Simon, A. / Lavoie, C. / Lane, M. / Hu, C.-K. / Liniger, E. / Gignac, L. et al. | 2006
- 193
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The Impact of Back-End-of-Line Process Variations on Critical Path TimingV. Nguyen Hoang, / Kumar, A. / Christie, P. et al. | 2006
- 196
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Effects of Chip-Package Interaction on Mechanical Reliability of Cu Interconnects for 65nm Technology Node and BeyondUchibori, C.J. / Xuefeng Zhang, / Ho, P.S. / Nakamura, T. et al. | 2006
- 199
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Optimal Repeaters for Sub-50nm Interconnect NetworksSekar, D.C. / Venkatesan, R. / Bowman, K.A. / Joshi, A. / Davis, J.A. / Meindl, J.D. et al. | 2006
- 201
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On-Chip Interconnect Networks at the End of the Roadmap: Limits and Nanotechnology OpportunitiesNaeemi, A. / Sarvari, R. / Meindl, J.D. et al. | 2006
- 202
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Performance Comparison of Interconnect Technology and Architecture Options for Deep Submicron Technology NodesBamal, M. / List, S. / Stucchi, M. / Verhulst, A.S. / Van Hove, M. / Cartuyvels, R. / Beyer, G. / Maex, K. et al. | 2006
- 204
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Dielectric/TaN Interface Design with Self-Assembled Monolayer Liner for 45nm & Beyond Cu/Porous Low-k Damascene InterconnectsKo, C.C. / Lin, K.C. / Choug, C.C. / Bao, T.I. / Tseng, T.C. / Jeng, S.M. / Yu, C.H. / Liang, M.S. et al. | 2006
- 207
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Robust 45-nm Node Cu/LJLK Interconnects using Effective Porogen ControlKagawa, Y. / Enornoto, Y. / Shimayama, T. / Kameshima, T. / Okamoto, M. / Kawashima, H. / Yamada, A. / Hasegawa, T. / Ahyama, K. / Masuda, H. et al. | 2006
- 207
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Spectral photoresponse of advanced interconnects: a possible solution to the ITRS most difficult characterization challengesGuedj, C. / Arnal, V. / Girault, V. / Imbert, G. / Daamen, R. / Hoofman, R.J.O.M / Gaillard, F. / Gosset, L. / Assous, M. / Bouchu, D. et al. | 2006
- 210
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Breakthrough Integration of 32nm-node CulCntra Low-k SiOC (k=2.0) Interconnects by using Advanced Pore-Sealing and Low-k Hard Mask TechnologiesArakawa, S. / Mizuno, I. / Ohoka, Y. / Nagahata, K. / Tabuchi, K. / Kanamura, R. / Kadomura, S. et al. | 2006
- 213
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45 nm Node Multi Level Interconnects with Porous SiOCH Dielectric k=2.5Arnal, V. / Farcy, A. / Aimadeddine, M. / Icard, B. / Guedj, C. / Maitrejean, S. / Todeschini, J. / Besling, W. / Brun, P. / Ollier, E. et al. | 2006
- 216
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High Performance Ultra Low-k (k=2.0/keff=2.4)/Cu Dual-Damascene Interconnect Technology with Self-Formed MnSixOy Barrier Layer for 32 nm-nodeUsui, T. / Tsumura, K. / Nasu, H. / Hayashi, Y. / Minamihaba, G. / Toyoda, H. / Sawada, H. / Ito, S. / Miyajima, H. / Watanabe, K. et al. | 2006
- 230
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Novel approach to fabricating carbon nanotube via interconnects using size-controlled catalyst nanoparticlesSato, S. / Nihei, M. / Mimura, A. / Kawabata, A. / Kondo, D. / Shioya, H. / Iwai, T. / Mishima, M. / Ohfuti, M. / Awano, Y. et al. | 2006
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2006 IITC Organizing Committee| 2006
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Table of Contents| 2006