Subject index (Englisch)
In:
IEEE Transactions on Electron Devices
;
47
, 12
;
16-50
;
2000
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Subject index
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Erschienen in:IEEE Transactions on Electron Devices ; 47, 12 ; 16-50
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.12.2000
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Format / Umfang:307762 byte
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 47, Ausgabe 12
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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2000 index IEEE Transactions on electron devices vol. 47| 2000
- 16
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Subject index| 2000
- 2245
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Change of editor-in-chiefHillenius, S.J. et al. | 2000
- 2247
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Launching the TRANSACTIONS into the New Millennium -- A Historical PerspectiveJindal, R.P. et al. | 2000
- 2249
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PAPERS - Compound Semiconductor Devices - Photogeneration and Carrier Recombination in Graded Gap Cu(In,Ga)Se2 Solar CellsDullweber, T. et al. | 2000
- 2249
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Photogeneration and carrier recombination in graded gap Cu(In, Ga)Se2 solar cellsDullweber, T. / Rau, U. / Contreras, M.A. / Noufi, R. / Schock, H.W. et al. | 2000
- 2255
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On the frequency dependent drain conductance of ion-implanted GaAs MESFETsNakajima, S. / Yanagisawa, M. / Tsumura, E. / Sakurada, T. et al. | 2000
- 2255
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PAPERS - Compound Semiconductor Devices - On the Frequency Dependent Drain Conductance of Ion-Implanted GaAs MESFETsNakajima, S. et al. | 2000
- 2261
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PAPERS - Compound Semiconductor Devices - Current Transient in Polymide-Passivated InP-InGaAs Heterojunction Bipolar Transistors: Systematic Experiments and Physical ModelWang, H. et al. | 2000
- 2270
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PAPERS - Compound Semiconductor Devices - Numerical Analysis of Surface-State Effects on Kink Phenomena of GaAs MESFETsHorio, K. et al. | 2000
- 2277
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GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiersMochizuki, K. / Welty, R.J. / Asbeck, P.M. / Lutz, C.R. / Welser, R.E. / Whitney, S.J. / Pan, N. et al. | 2000
- 2277
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PAPERS - Compound Semiconductor Devices - GaInP-GaAs Collector-Up Tunneling-Collector Heterojunction Bipolar Transistors (C-Up TC-HBTs): Optimization of Fabrication Process and Epitaxial Layer Structure for High-Efficiency High Power AmplifiersMochizuki, K. et al. | 2000
- 2284
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PAPERS - Materials Processing and Packgaging - Surface Passivation of InGaP-InGaAs-GaAs Pseudomorphic HEMTs with Ultrathin GaS FilmOkamoto, N. et al. | 2000
- 2290
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PAPERS - Optoelectronics, Displays, Imaging - Cell Gap and Twist Angle Determinations of a Reflective Liquid Crystal DisplayWu, S.-T. et al. | 2000
- 2294
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PAPERS - Optoelectronics, Displays, Imaging - Non-Optical Characterization Techniques for Uncooled Microbolometer Infrared SensorsHornsey, R. et al. | 2000
- 2294
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Nonoptical characterization techniques for uncooled microbolometer infrared sensorsHornsey, R. / Thomas, P. / Savchenko, A. / Pope, T. et al. | 2000
- 2301
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PAPERS - Reliability - Weibull Breakdown Characteristics and Oxide Thickness UniformityWu, E. et al. | 2000
- 2310
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PAPERS - Silicon Devices - Density-Gradient Analysis of MOS TunnelingAncona, M.G. et al. | 2000
- 2320
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PAPERS - Silicon Devices - FinFET -- A Self-Aligned Double-Gate MOSFET Scalable to 20 nmHisamoto, D. et al. | 2000
- 2326
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PAPERS - Silicon Devices - Threshold Voltage Reduction Model for Buried Channel PMOSFETs Using Quasi-2-D Poisson EquationLee, Y.-T. et al. | 2000
- 2334
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PAPERS - Silicon Devices - Coulomb Blockade Memory Using Integrated Single-Electron Transistor-Metal-Oxide-Semiconductor Transistor Gain CellsDurrani, Z.A.K. et al. | 2000
- 2340
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Analysis of the depletion layer of exponentially graded p-n junctions with nonuniformly doped substratesRinaldi, N. et al. | 2000
- 2340
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PAPERS - Silicon Devices - Analysis of the Depletion Layer of Exponentially Graded P-N Junctions with Nonuniformly Doped SubstratesRinaldi, N. et al. | 2000
- 2347
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PAPERS - Silicon Devices - Semiconductor Thickness and Back-Gate Voltage Effects on the Gate Tunnel Current in the MOS-SOI System with an Ultrathin OxideMajkusiak, B. et al. | 2000
- 2352
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PAPERS - Silicon Devices - Analytical Model and Characterization of Abnormally Structured MOSFETsLee, J.-S. et al. | 2000
- 2358
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Tunneling into interface states as reliability monitor for ultrathin oxidesGhetti, A. / Sangiorgi, E. / Bude, J. / Sorsch, T.W. / Weber, G. et al. | 2000
- 2358
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PAPERS - Silicon Devices - Tunneling into Interface States as Reliability Monitor for Ultrathin OxideGhetti, A. et al. | 2000
- 2366
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PAPERS - Silicon Devices - Polysilicon Quantization Effects on the Electrical Properties of MOS TransistorsSpinelli, A.S. et al. | 2000
- 2372
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PAPERS - Silicon Devices - Short Channel Epi-MOSFET ModelSuzuki, K. et al. | 2000
- 2379
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PAPERS - Silicon Devices - High-Performance and High-Reliability 8-nm Gate-Length DTMOS with Indium Super Steep Retrograde ChannelChang, S.-J. et al. | 2000
- 2379
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high-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channelChang, Sun-Jay / Chang, Chun-Yen / Chen, Coming / Chao, Tien-Sheng / Lee, Yao-Jen / Huang, Tiao-Yuan et al. | 2000
- 2385
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PAPERS - Silicon Devices - Power SI-MOSFET Operating with High Efficiency Under Low Supply VoltageOhguro, T. et al. | 2000
- 2392
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PAPERS - Solid-State Device Phenomena - Iron Contamination in Silicon Wafers Measured with the Pulsed MOS Capacitor Generation Lifetime TechniqueTan, S.-E. et al. | 2000
- 2399
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The leakage currents of amorphous silicon thin-film transistors: channel charge emissionLemmi, F. / Street, R.A. et al. | 2000
- 2399
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PAPERS - Solid-State Device Phenomena - The Leakage Currents of Amorphous Silicon Thin-Film Transistors: Channel Charge EmissionLemmi, F. et al. | 2000
- 2404
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PAPERS - Solid-State Device Phenomena - The Leakage Currents of Amorphous Silicon Thin-Film Transistors: Injection Currents, Back Channel Currents, and Stress EffectsLemmi, F. et al. | 2000
- 2410
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PAPERS - Solid-State Device Phenomena - An Accurate and Efficient High Frequency Noise Simulation Technique for Deep Submicron MOSFETsGoo, J.-S. et al. | 2000
- 2420
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PAPERS - Solid-State Power and High Voltage - Modeling of High Current Density Trench Gate MOSFETDhannawardana, K.G.P. et al. | 2000
- 2429
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Mechanical stress related instabilities in silicon under metal coverageManic, D. / Igic, P.M. / Mawby, P.A. / Haddab, Y. / Popovic, R.S. et al. | 2000
- 2429
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PAPERS - Solid-State Sensors and Actuators - Mechanical Stress Related Instabilities in Silicon Under Metal CoverageManic, D. et al. | 2000
- 2438
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PAPERS - Vacuum Electron Devices - Design of Helix Slow-Wave Structures for High Efficiency TWTsSrivastava, V. et al. | 2000
- 2444
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Modeling of short geometry polycrystalline-silicon thin-film transistorChopra, S. / Gupta, R.S. et al. | 2000
- 2444
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BRIEFS - Modeling of Short Geometry Polycrystalline-Silicon Thin-Film TransistorChopra, S. et al. | 2000
- 2446
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2000 INDEX| 2000