Total dose effects on ATLAS-SCT front-end electronics (Englisch)
- Neue Suche nach: Ullan, M.
- Neue Suche nach: Dorfan, D.
- Neue Suche nach: Dubbs, T.
- Neue Suche nach: Grillo, A.A.
- Neue Suche nach: Spencer, E.
- Neue Suche nach: Seiden, A.
- Neue Suche nach: Spieler, H.
- Neue Suche nach: Gilchriese, M.
- Neue Suche nach: Lozano, M.
- Neue Suche nach: Ullan, M.
- Neue Suche nach: Dorfan, D.
- Neue Suche nach: Dubbs, T.
- Neue Suche nach: Grillo, A.A.
- Neue Suche nach: Spencer, E.
- Neue Suche nach: Seiden, A.
- Neue Suche nach: Spieler, H.
- Neue Suche nach: Gilchriese, M.
- Neue Suche nach: Lozano, M.
In:
RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605)
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351-356
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2001
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ISBN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Total dose effects on ATLAS-SCT front-end electronics
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Beteiligte:Ullan, M. ( Autor:in ) / Dorfan, D. ( Autor:in ) / Dubbs, T. ( Autor:in ) / Grillo, A.A. ( Autor:in ) / Spencer, E. ( Autor:in ) / Seiden, A. ( Autor:in ) / Spieler, H. ( Autor:in ) / Gilchriese, M. ( Autor:in ) / Lozano, M. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.01.2001
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Format / Umfang:314858 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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A-1 Characterization of a 63 MeV Proton Beam with Optically Stimulated Luminescent FilmsPolge, G. / Dusseau, L. / Idri, K. / Plattard, D. / Vaille, J. R. / Ranchoux, G. / Fesquet, J. / Gasiot, J. / Iborra-Brassar, N. / RADECS Association et al. | 2002
- 1
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Characterization of a 63 MeV proton beam with optically stimulated luminescent filmsPolge, G. / Dusseau, L. / Idri, K. / Plattard, D. / Vaille, J.R. / Ranchoux, G. / Fesquet, J. / Gasiot, J. / Iborra-Brassard, N. et al. | 2001
- 6
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A-2 Characterization of an Integrated Sensor Using Optically Stimulated Luminescence for In-Flight DosimetryPlattard, D. / Ranchoux, G. / Dusseau, L. / Polge, G. / Vaille, J.-R. / Gasiot, J. / Fesquet, J. / Ecoffet, R. / Iborra-Brassart, N. / RADECS Association et al. | 2002
- 6
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Characterization of an integrated sensor using optically stimulated luminescence for in-flight dosimetryPlattard, D. / Ranchoux, G. / Dusseau, L. / Polge, G. / Vaille, J.-R. / Gasiot, J. / Fesquet, J. / Ecoffet, R. / Iborra-Brassart, N. et al. | 2001
- 12
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A CCD miniature radiation monitorChugg, A.M. / Jones, R. / Jones, P. / Nieminen, P. / Mohammadzadeh, A. / Robbins, M.S. / Lovell, K. et al. | 2001
- 12
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A-3 A CCD Miniature Radiation MonitorChugg, A. M. / Jones, R. / Jones, P. / Nieminen, P. / Mohammadzadeh, A. / Robbins, M. S. / Lovell, K. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 18
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In situ measurement of the particle linear energy transfer using the sensitive junctions of the device under testReed, R.A. / Roth, D.R. / Ladbury, R. / Kniffin, S. / LaBel, K. et al. | 2001
- 18
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A-4 In Situ Measurement of the Particle Linear Energy Transfer Using the Sensitive Junctions of the Device Under TestReed, R. A. / Roth, D. R. / Ladbury, R. / Kniffin, S. / LaBel, K. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 24
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A-6 Radiation Environment Measurements with SPICA on-board the MIR StationBarde, S. / Cueto, J. / Ecoffet, R. / Falguere, D. / Nuns, T. / Duzellier, S. / Boscher, D. / Bourdarie, S. / Tsourilo, I. / RADECS Association et al. | 2002
- 24
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Radiation environment measurements with SPICA on-board the MIR stationBarde, S. / Cueto, J. / Ecoffet, R. / Falguere, D. / Nuns, T. / Duzellier, S. / Boscher, D. / Bourdarie, S. / Tsourilo, I. et al. | 2001
- 31
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A-8 SEU Measurements and Predictions on MPTB for a Large Energetic Solar EventCampbell, A. / Buchner, S. / Petersen, E. / Blake, B. / Mazur, J. / Dyer, C. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 31
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SEU measurements and predictions on MPTB for a large energetic solar particle eventCampbell, A. / Buchner, S. / Petersen, E. / Blake, B. / Mazur, J. / Dyer, C. et al. | 2001
- 37
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A-9 Observation and Analysis of Single Event Effects on-board the SOHO SatelliteHarboe-Sorensen, R. / Daly, E. / Teston, F. / Schweitzer, H. / Nartallo, R. / Perol, P. / Vandenbussche, F. / Dzitko, H. / Cretolle, J. / RADECS Association et al. | 2002
- 37
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Observation and analysis of Single Event Effects on-board the SOHO satelliteHarboe-Sorensen, R. / Daly, E. / Teston, F. / Schweitzer, H. / Nartallo, R. / Perol, P. / Vandenbussche, F. / Dzitko, H. / Cretolle, J. et al. | 2001
- 44
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Direct measurement of internal charging currents in geostationary transfer orbitRyden, K.A. / Rodgers, D.J. / Morris, P.A. / Frydland, A.D. / Jolly, H.S. / Dyer, C.S. et al. | 2001
- 44
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A-10 Direct Measurement of Internal Charging Currents in Geostationary Transfer OrbitRyden, K. A. / Rodgers, D. J. / Morris, P. A. / Frydland, A. D. / Jolly, H. S. / Dyer, C. S. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 51
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AP-1 Silicon Carbide Gamma Dose Rate Meter for Harsh EnvironmentsMetzger, S. / Henschel, H. / Kohn, O. / Lennartz, W. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 51
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Silicon carbide radiation detector for harsh environmentsMetzger, S. / Henschel, H. / Kohn, O. / Lennartz, W. et al. | 2001
- 57
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AP-3 Gamma-Ray Irradiation and Post-Irradiation Responses of High Dose Range RADFETsJaksic, A. / Ristic, G. / Pejovic, M. / Mohammadzadeh, A. / Sudre, C. / Lane, W. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 57
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Gamma-ray irradiation and post-irradiation responses of high dose range RADFETsJaksic, A. / Ristic, G. / Pejovic, M. / Mohammadzadeh, A. / Sudre, C. / Lane, W. et al. | 2001
- 69
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B-1 60 MeV Proton Irradiation Effects on NO-annealed and Standard-Oxide Deep Submicron MOSFETsSimoen, E. / Hermans, J. / Mercha, A. / Vereecken, W. / Vermoere, C. / Claeys, C. / Augendre, E. / Badenes, G. / Mohammadzadeh, A. / RADECS Association et al. | 2002
- 69
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60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETsSimoen, E. / Hermans, J. / Mercha, A. / Vereecken, W. / Vermoere, C. / Claeys, C. / Augendre, E. / Badenes, G. / Mohammadzadeh, A. et al. | 2001
- 77
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High energy ion irradiation effects on thin oxide p-channel MOSFETsCandelori, A. / Contarato, D. / Bacchetta, N. / Bisello, D. / Hall, G. / Noah, E. / Raymond, M. / Wyss, J. et al. | 2001
- 77
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B-2 High Energy Ion Irradiation Effects on Thin Oxide p-Channel MOSFETsCandelori, A. / Contarato, D. / Bacchetta, N. / Bisello, D. / Hall, G. / Noah, E. / Raymond, M. / Wyss, J. / RADECS Association / TIMA et al. | 2002
- 85
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Charge collection studies of SOI diodesColladant, T. / Ferlet-Cavrois, V. / Musseau, O. / L'Hoir, A. / Campbell, A.B. / Buchner, S. / Knudson, A. / McMorrow, D. / Fischer, B. / Schlogl, M. et al. | 2001
- 85
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B-3 Charge Collection Studies of SOI DiodesColladant, T. / Ferlet-Cavrois, V. / Musseau, O. / L Hoir, A. / Campbell, A. B. / Buchner, S. / Knudson, A. / Mc Morrow, D. / Fischer, B. / Shlogl, M. et al. | 2002
- 91
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B-5 Novel Results on Fluence Dependence and Annealing Behaviour of Oxygenated and Non-Oxygenated Silicon DetectorsMartinez, C. / Rafi, J. M. / Lozano, M. / Campabadal, F. / Santander, J. / Fonseca, L. / Ullan, M. / Moreno, A. / RADECS Association / TIMA et al. | 2002
- 91
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Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectorsMartinez, C. / Rafi, J.M. / Lozano, M. / Campabadal, F. / Santander, J. / Fonseca, L. / Ullan, M. / Moreno, A. et al. | 2001
- 98
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Embedding techniques for irradiation-induced defects in crystalline SiO/sub 2/Edwards, A.H. / Sushko, P.V. / Shluger, A.L. / Sulimov, V.B. et al. | 2001
- 98
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B-6 Embedding Techniques for Irradiation-induced Defects in Crystalline SiO2Edwards, A. H. / Sushko, P. V. / Shuler, A. L. / Sulimov, V. B. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 105
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B-7 Defects Produced by Medium Energy Proton Bombardment of MOS DevicesLenahan, P. M. / Mishima, T. D. / Jumper, J. B. / Fogarty, T. N. / Marreo, M. / Cruz, L. / Shojah-Ardalan, S. / Dwidedi, R. / Wilkins, R. / Trombetta, L. P. et al. | 2002
- 105
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Defects produced by medium energy proton bombardment of MOS devicesLenahan, P.M. / Mishima, T.D. / Jumper, J.B. / Fogarty, T.N. / Marrero, M. / Cruz, L. / Shojah-Ardalan, S. / Dwivedi, R. / Wilkins, R. / Trombetta, L.P. et al. | 2001
- 110
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BP-1 A Comparison of Experiment and Simulation of Light Particle Production in Silicon by 74 MeV NeutronsNovak, D. / Kerek, A. / Klamra, W. / Molnar, J. / Van der Marel, J. / Norlin, L.-O. / Nyberg, J. / Renberg, P.-U. / RADECS Association / TIMA et al. | 2002
- 110
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A comparison of experiment and simulation of light particle production in silicon by 74 MeV neutronsNovak, D. / Kerek, A. / Klamra, W. / Molnar, J. / Van der Marel, J. / Norlin, L.-O. / Nyberg, J. / Renberg, P.-U. et al. | 2001
- 114
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BP-2 Effects of High-Temperature Gamma Ray and Electron Irradiation on npn Si TransistorsOhyama, H. / Hirao, T. / Simoen, E. / Claeys, C. / Kobayashik, K. / Nakabayashi, M. / Onoda, S. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 114
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Effects of high-temperature gamma ray and electron irradiation on npn Si transistorsOhyama, H. / Hirao, T. / Simoen, E. / Claeys, C. / Kobayashi, K. / Nakabayashi, M. / Onoda, S. et al. | 2001
- 120
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BP-5 MOSFET Prediction in Space Environments Taking into Account High Frequency Switched Bias ResponseShvetzov-Shilovsky, I. N. / Pershenkov, V. S. / Belyakov, V. V. / Zebrev, G. I. / Bashin, A. Y. / Ivashin, D. V. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 120
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MOSFET prediction in space environments taking into account high frequency switched bias responseShvetzov-Shilovsky, I.N. / Pershenkov, V.S. / Belyakov, V.V. / Zebrev, G.I. / Bashin, A.Y. / Ivashin, D.V. et al. | 2001
- 125
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BP-6 Temperature Dependence of Heavy Ion Induced Current Transients in Si Epilayer DevicesLaird, J. S. / Hirao, T. / Onoda, S. / Mori, H. / Itoh, H. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 125
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Temperature dependence of heavy ion induced current transients in Si epilayer devicesLaird, J.S. / Hirao, T. / Onoda, S. / Mori, H. / Itoh, H. et al. | 2001
- 132
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Charge-collection dynamics of InP-based high electron mobility transistors (HEMTs)McMorrow, D. / Boos, J.B. / Doe Park, / Buchner, S. / Knudson, A.R. / Melinger, J.S. et al. | 2001
- 132
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BP-7 Charge-CollectionDynamics of InP-Based132 High Electron Mobility Transistors (HEMTs)McMorrow, D. / Boos, J. B. / Park, D. / Buchner, S. / Knundson, A. R. / Melinger, J. S. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 141
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C-1 Radiation Hardening of Optical Fibres by High Pressure Hydrogen TreatmentHenschel, H. / Kohn, O. / Weinand, U. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 141
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Radiation hardening of pure silica optical fibres by high pressure hydrogen treatmentHenschel, H. / Kohn, O. / Weinand, U. et al. | 2001
- 150
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C-2 On the Role of Fluorine-Doped Cladding in Radiation-Induced Absorption of Silica Optical FibresZabezhailov, M. O. / Tomashuk, A. L. / Nikolin, I. V. / Golant, K. M. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 150
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The role of fluorine-doped cladding in radiation-induced absorption of silica optical fibersZabezhailov, M.O. / Tomashuk, A.L. / Nikolin, I.V. / Golant, K.M. et al. | 2001
- 154
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C-3 Design and Characterization of a Radiation Tolerant Optical Transmitter using Discrete COTS Bipolar Transistors and VCSEBerghmans, F. / Embretchts, E. / Van Uffelen, M. / Coenen, S. / Decreton, M. / Van Gorp, J. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 154
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Design and characterization of a radiation tolerant optical transmitter using discrete COTS bipolar transistors and VCSELsBerghmans, F. / Embrechts, K. / Van Uffelen, M. / Coenen, S. / Decreton, M. / Van Gorp, J. et al. | 2001
- 161
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Analysis of the proton induced permanent degradation in an optocouplerGermanicus, R. / Dusseau, L. / Saigne, F. / Barde, S. / Ecoffet, R. / Mion, O. / Calvel, P. / Fesquet, J. / Gasiot, J. et al. | 2001
- 161
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C-4 Analysis of the Proton Induced Permanent Degradation in an OptocouplerGermanicus, R. / Dusseau, L. / Saigne, F. / Barde, S. / Ecoffet, R. / Mion, O. / Calvel, P. / Fesquet, J. / Gasiot, J. / RADECS Association et al. | 2002
- 166
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Radiation characterization and test methodology study of optocouplers devices for space applicationsMangeret, R. / Bonora, L. / Bouchet, T. / Peyre, D. / Harboe-Sorensen, R. et al. | 2001
- 166
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C-5 Radiation Characterization and Test Methodology Study of Optocouplers Devices for Space ApplicationsMangeret, R. / Bonora, L. / Bouchet, T. / Peyre, D. / Harboe-Sorensen, R. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 172
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Energy dependence of proton damage in optical emittersJohnston, A.H. / Miyahira, T.F. et al. | 2001
- 172
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C-6 Energy Dependence of Proton Damage in Optical EmittersJohnston, A. H. / Miyahira, T. F. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 179
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A new radiation hard optical fibre for high dose valuesHenschel, H. / Kohn, O. / Weinand, U. et al. | 2001
- 179
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CP-1 A New Radiation Hard Optical Fibre for High Dose ValuesHenschel, H. / Kohn, O. / Weinand, U. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 186
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CP-2 Transient Noise in a CCD Camera Sensor Induced by Neutron and Gamma IrradiationBaggio, J. / D hose, C. / Martinez, M. / Musseau, O. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 186
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Transient noise in a CCD camera sensor induced by neutron and gamma irradiationBaggio, J. / D'hose, C. / Martinez, M. / Musseau, O. et al. | 2001
- 192
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CP-3 Radiation-Induced Absorption in Optical Fibers in the Near-Infrared Region: the Effect of H2-and D2-LoadingZabezhailov, M. O. / Tomashukl, A. L. / Nikolin, I. V. / Golant, K. M. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 192
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Radiation-induced absorption in optical fibers in the near-infrared region: the effect of H/sub 2/- and D/sub 2/-loadingZabezhailov, M.O. / Tomashuk, A.L. / Nikolin, I.V. / Golant, K.M. et al. | 2001
- 195
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Kinetic models and spectral dependencies of the radiation induced attenuation in pure silica fibresBorgermans, P. / Brichard, B. et al. | 2001
- 195
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CP-4 Kinetic Models and Spectral Dependencies of the Radiation Induced Attenuation in Pure Silica FibersBorgermans, P. / Brichard, B. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 201
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CP-5 The Effect of low Energy Protons on the Operational Characteristics of EPIC-MOS CCDsAbbey, A. F. / Ambrosi, R. M. / Smith, D. R. / Kendziorra, E. / Hutchinson, I. / Short, A. / Bennie, P. / Holland, A. / Clauss, T. / Kuster, M. et al. | 2002
- 201
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The effect of low energy protons on the operational characteristics of EPIC-MOS CCDsAbbey, A.F. / Ambrosi, R.M. / Smith, D.R. / Kendziorra, E. / Hutchinson, I. / Short, A. / Bennie, P. / Holland, A. / Clauss, T. / Kuster, M. et al. | 2001
- 211
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D-1 Comparison of the Sensitivity to Heavy Ions of 0.25 mum Bulk and SOI TechnologiesGasiot, G. / Ferlet-Cavrois, V. / Roche, P. / Flatresse, P. / D Hose, C. / Musseau, O. / de Poncharra, J. d. P. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 211
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Comparison of the sensitivity to heavy ions of 0.25 /spl mu/m bulk and SOI technologiesGasiot, G. / Ferlet-Cavrois, V. / Roche, P. / Flatresse, P. / D'Hose, C. / Musseau, O. / du Port de Poncharra, J. et al. | 2001
- 217
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D-2 Characterization of the Parasite Bipolar Amplification in SOI Technologies Submitted to Transient IrradiationFerlet-Cavrois, V. / Marcandella, C. / Giraud, G. / Gasiot, G. / Colladant, T. / Musseau, O. / Fenouillet, C. / de Poncharra, J. d. P. / RADECS Association / TIMA et al. | 2002
- 217
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Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiationFerlet-Cavrois, V. / Marcandella, C. / Giraud, G. / Gasiot, G. / Colladant, T. / Musseau, O. / Fenouillet, C. / du Port de Poncharra, J. et al. | 2001
- 223
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Analysis of total dose tolerance of LOCOS isolated MOSFET by 2D self consistent simulationsTorres, A. / Flament, O. et al. | 2001
- 223
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D-3 Analysis of Total Dose Tolerance of Locos Isolated MOSFET by 2D Self Consistent SimulationsTorres, A. / Flament, O. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 229
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DP-2 Proton Radiation Hardening of Silicon Oxynitride Gate nMOSFETs Formed by Nitrogen Implantation into Silicon Prior to OxidationDiniz, J. A. / Fo, J. G. M. / Zakia, M. B. P. / Doi, I. / Swart, J. W. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 229
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Proton radiation hardening of silicon oxynitride gate nMOSFETs formed by nitrogen implantation into silicon prior to oxidationDiniz, J.A. / Fo, J.G. / Zakia, M.B.P. / Doi, L. / Swart, J.W. et al. | 2001
- 237
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Evaluation of a design methodology dedicated to dose rate hardened linear integrated circuitsDeval, Y. / Lapuyade, H. / Fouillat, P. / Barnaby, H. / Darracq, F. / Briand, R. / Lewis, D. / Schrimpf, R.D. et al. | 2001
- 237
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E-1 Evaluation of a Design Methodology Dedicated to Dose Rate Hardened Linear Integrated CircuitsDeval, Y. / Lapuyade, H. / Fouillat, P. / Barnaby, H. / Darracq, F. / Briand, R. / Lewis, D. / Schrimpf, R. D. / RADECS Association / TIMA et al. | 2002
- 243
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E-3 Improving the SEU Hard Design Using a Pulsed LaserDutertre, J. M. / Roche, F. M. / Fouillat, P. / Lewis, D. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 243
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Improving an SEU hard design using a pulsed laserDutertre, J.M. / Roche, F.M. / Fouillat, P. / Lewis, D. et al. | 2001
- 248
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Injecting single event upsets in a digital signal processor by means of direct memory access requests: a new method for generating bit flipsFerreyra, P.A. / Marques, C.A. / Velazco, R. / Calvo, O. et al. | 2001
- 248
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E-4 Injecting Single Event Upsets in a Digital Signal Processor by Means of Direct Memory Access Requests: A New Method for Generating Bit FlipsFerreyra, P. A. / Marques, C. A. / Velazco, R. / Calvo, O. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 253
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E-5 On the Use of VHDL Simulation and Emulation to Derive Error RatesLima, F. / Rezgui, S. / Carro, L. / Velazco, R. / Reis, R. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 253
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On the use of VHDL simulation and emulation to derive error ratesLima, F. / Rezgui, S. / Carro, L. / Velazco, R. / Reis, R. et al. | 2001
- 261
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EP-1 Design and Validation Testing of the SEE-Hardened IS1825ASRH Pulse Width ModeratorVan Vonno, N. W. / Newman, W. H. / Williams, A. P. / Marshall, G. / Cartagena, E. N. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 261
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Design and validation testing of the SEE-hardened IS1825ASRH pulse width modulatorvan Vonno, N.W. / Newman, W.H. / Williams, A.P. / Marshall, T.G. / Cartagena, E.N. et al. | 2001
- 266
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EP-2 Electronic Circuit Analogue Model for CMOS DevicesVarga, L. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 266
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Electronic circuit analogue model for CMOS devicesVarga, L. et al. | 2001
- 269
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Software dependability techniques validated via fault injection experimentsBenso, A. / Di Carlo, S. / Di Natale, G. / Prinetto, P. / Tagliaferri, L. et al. | 2001
- 269
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EP-5 Software Dependability Techniques Validated via Fault Injection ExperimentsBenso, A. / Di Carlo, S. / Di Natale, G. / Prinetto, P. / Tagliaferri, L. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 275
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A fault injection analysis of Virtex FPGA TMR design methodologyLima, F. / Carmichael, C. / Fabula, J. / Padovani, R. / Reis, R. et al. | 2001
- 275
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EP-6 A Fault Injection Analysis of Virtex FPGA TMR Design MethodologyLima, F. / Carmichael, C. / Fabula, J. / Padovani, R. / Reis, R. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 285
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Heavy ion characterization of SEU mitigation methods for the Virtex FPGASturesson, F. / Mattsson, S. / Carmichael, C. / Harboe-Sorensen, R. et al. | 2001
- 285
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F-1 Heavy Ion Characterization of SEU Mitigation Methods for the Virtex FPGASturesson, F. / Mattsson, S. / Carmichael, C. / Harboe-Sorensen, R. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 292
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Effects of single-event upsets on satellite communications: Issues for blind equalizer designDestro-Filho, J.B. / Matolak, D.W. et al. | 2001
- 292
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F-2 Effects of Single -Event Upsets on Satellite Communications: Issues for Blind Equalizer DesignDestro-Filho, J. B. / Matolak, D. W. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 296
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Single-chip pressure sensor radiation hardness researchArtamonov, A.S. / Boychenko, D.V. / Nikiforov, A.Y. / Sogoyan, A.V. / Shelepin, N.A. / Telets, V.A. / Tverskoy, M.G. et al. | 2001
- 296
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FP-2 Single-Chip Pressure Sensor Radiation Hardness ResearchArtamonov, S. / Boychenko, D. V. / Nikiforov, A. Y. / Sogoyan, A. V. / Shelepin, N. A. / Telets, V. A. / Tverskoy, M. G. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 300
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Numerical study of a gg-nMOS protection transistor under ionizing radiation and electrostatic dischargeGaly, Ph. / Berland, V. / Guilhaume, A. / Foucher, B. et al. | 2001
- 300
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FP-3 Numerical Study of a gg-nMOS Protection Transistor under Ionizing Radiation and Electrostatic DischargeGaly, P. / Berland, V. / Guilhaume, A. / Foucher, B. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 305
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Reliability of gas filled surge arresters characteristics under the influence of induced and built-in radiationLoncar, B. / Osmokrovic, P. / Stankovic, S.J. / Stojanovic, M. et al. | 2001
- 305
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FP-4 Reliability of Gas Filled Surge Arresters Characteristics under the Influence of Induced and Built-in RadiationLoncar, B. / Osmokrovic, P. / Stankovic, S. J. / Stojanovic, M. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 315
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G-1 Single Event Burnout in DC-DC Converters for the LHC ExperimentsRivetta, C. / Allongue, B. / Berger, G. / Faccio, F. / Hajdas, W. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 315
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Single event burnout in DC-DC converters for the LHC experimentsRivetta, C. / Allongue, B. / Berger, G. / Faccio, F. / Hajdas, W. et al. | 2001
- 323
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Radiation effects on high performance spaceborne electronicsBerger, R.W. / Brown, R. / Doyle, S. / Haddad, N. / Kapcio, P. / Rodgers, J. / Wood, N. et al. | 2001
- 323
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G-2 Radiation Effects on High Performance Spaceborne ElectronicsBerger, R. W. / Brown, R. / Doyle, S. / Haddad, N. / Kapcio, P. / Rodgers, J. / Wood, N. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 328
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G-3 Implications of Advanced Microelectronics Technologies for Heavy Ion Single Event Effect (SEE) TestingPoivey, C. / Barth, J. A. / Reed, R. A. / Stassinopoulos, E. G. / LaBel, K. A. / Xapsos, M. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 328
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Implications of advanced microelectronics technologies for heavy ion single event effect (SEE) testingPoivey, C. / Barth, J.A. / Reed, R. / Stassinopoulos, E.G. / LaBel, K.A. / Xapsos, M. et al. | 2001
- 332
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Effects of previous ionizing radiation exposure on programming EPROMSMcNulty, P.J. / Yow, S. / Scheick, L.Z. / Polge, G. / Dusseau, L. / Davis, M.G. / Tortora, M. et al. | 2001
- 332
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G-4 Effects of Previous Ionizing Radiation Exposure on Programming EPROMSMcNulty, P. J. / Yow, S. / Scheick, L. Z. / Polge, G. / Dusseau, L. / Davis, M. G. / Tortora, M. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 338
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G-5 Test Conditions for COTS CMOS PEMs in Total Dose EnvironmentsDowling, S. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 338
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"Test conditions for COTS CMOS PEMs in total dose environments"Dowling, S. et al. | 2001
- 343
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G-6 Towards a Single Event Transient Hardness Assurance MethodologyMarec, R. / Chatry, C. / Adell, P. / Mion, O. / Barillot, C. / Calvel, P. / Cresciucci, L. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 343
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Towards a single event transient hardness assurance methodologyMarec, R. / Chatry, C. / Adell, P. / Mion, O. / Barillot, C. / Calvel, P. / Cresciucci, L. et al. | 2001
- 351
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GP-2 Total Dose Effects on ATLAS-SCT Front-End ElectronicsUllan, M. / Dorfan, D. / Dubbs, T. / Grillo, A. A. / Spencer, E. / Seiden, A. / Spieler, H. / Gilchriese, M. / Lozano, M. / RADECS Association et al. | 2002
- 351
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Total dose effects on ATLAS-SCT front-end electronicsUllan, M. / Dorfan, D. / Dubbs, T. / Grillo, A.A. / Spencer, E. / Seiden, A. / Spieler, H. / Gilchriese, M. / Lozano, M. et al. | 2001
- 357
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GP-6 Dose and Dose Rate Effects on NPN Bipolar Junction Transistors Irradiated at High TemperatureBoch, J. / Saigne, F. / Maurel, T. / Giustino, F. / Dusseau, L. / Schrimpf, R. D. / Galloway, K. F. / David, J. P. / Ecoffet, R. / Fesquet, J. et al. | 2002
- 357
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Dose and dose rate effects on NPN bipolar junction transistors irradiated at high temperatureBoch, J. / Saigne, F. / Maurel, T. / Giustino, F. / Dusseau, L. / Schrimpf, R.D. / Galloway, K.F. / David, J.P. / Ecoffet, R. / Fesquet, J. et al. | 2001
- 365
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Nuclear models for proton induced upsets: a critical comparisonAkkerman, A. / Barak, J. / Lifshitz, Y. et al. | 2001
- 365
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H-1 Nuclear Models for Proton Induced Upsets: a Critical ComparisonAkkerman, A. / Barak, J. / Lifshitz, Y. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 373
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Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMsInguimbert, C. / Duzellier, S. / Ecoffet, R. et al. | 2001
- 373
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H-2 Contribution of GEANT4 to the Determination of Sensitive Volumes in Case of High-Integrated RAMsInguimbert, C. / Duzellier, S. / Ecoffet, R. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 380
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H-3 A New Approach to Measuring the Sensitive Volume Using a Pulsed Laser SystemJones, R. / Chugg, A. M. / Harboe-Sorensen, R. / Fitzgerald, R. / Allison, R. / O Shea, T. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 380
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A new approach to measuring the sensitive volume using a pulsed laser systemJones, R. / Chugg, A.M. / Jones, P. / Harboe-Sorensen, R. / Fitzgerald, R. / Allison, R. / O'Shea, T. et al. | 2001
- 387
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H-4 Single-Event Sensitivity of a Single SRAM CellDarracq, F. / Beauchene, T. / Pouget, V. / Lapuyade, H. / Lewis, D. / Fouillat, P. / Touboul, A. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 387
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Single-event sensitivity of a single SRAM cellDarracq, F. / Beauchene, T. / Pouget, V. / Lapuyade, H. / Lewis, D. / Fouillat, P. / Touboul, A. et al. | 2001
- 392
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Coping with SEUs/SETs in microprocessors by means of low-cost solutions: a comparison studyRebaudengo, M. / Sonza Reorda, M. / Violante, M. / Nicolescu, B. / Velano, R. et al. | 2001
- 392
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H-6 Coping with SEUs/SETs in Microprocessors by Means of Low-cost Solutions: A Comparison StudyRebaudengo, M. / Reorda, M. S. / Violante, M. / Nicolescu, B. / Velazco, R. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 398
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H-7 Effect of Amplifier Parameters on Single Event Transients in an Inverting Operational AmplifierSternberg, A. L. / Massengill, L. W. / Schrimpf, R. D. / Boulghassoul, Y. / Barnaby, H. J. / Buchner, S. / Pease, R. L. / Howard, J. W. / RADECS Association / TIMA et al. | 2002
- 398
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Effect of amplifier parameters on single-event transients in an inverting operational amplifierSternberg, A.L. / Massengill, L.W. / Schrimpf, R.D. / Boulghassoul, Y. / Barnaby, H.J. / Buchner, S. / Pease, R.L. / Howard, J.W. et al. | 2001
- 405
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Estimation of ion- and proton-induced SEU rate by two values of saturation cross sectionsChumakov, A.I. / Tverskoy, M.G. et al. | 2001
- 405
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HP-1 Estimation of Ion-and Proton-Induced SEU Rate by Two Values of Saturation Cross SectionsChumakov, A. I. / Tverskoy, M. G. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 410
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Two-parameter model calculations of the proton and pion-induced SEU cross sectionsTverskoy, M.G. / Duzellier, S. et al. | 2001
- 410
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HP-2 Two-Parameter Model Calculations of the Proton and Pion-Induced SEU Cross SectionsTverskoy, M. G. / Duzellier, S. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 418
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HP-3 Recent Studies of Single-Event Phenomena in Devices Using the Heavy-Ion Microbeam at JAERIHirao, T. / Laird, J. S. / Mori, H. / Onoda, S. / Itoh, H. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 418
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Recent studies of single-event phenomena in devices using the heavy-ion microbeam at JAERIHirao, T. / Laird, J.S. / Mori, H. / Onoda, S. / Itoh, H. et al. | 2001
- 423
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HP-4 Heavy Ion Induced Hard Errors in Memory Devices with Sub-Micron Feature SizesKoga, R. / Crain, S. / Crawford, K. / Yu, P. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 423
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Heavy ion induced hard errors in memory devices with sub-micron feature sizesKoga, R. / Crain, S. / Crawford, K. / Yu, P. et al. | 2001
- 431
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HP-6 Single-Event Transient (SET) Characterization of a LM119 Voltage Comparator: an Approach to SET Model Validation Using a Pulsed LaserBuchner, S. / McMorrow, D. / Sternberg, A. / Massengill, L. / Pease, R. L. / Maher, M. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 431
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Single-event transient (SET) characterization of a LM119 voltage comparator: an approach to SET model validation using a pulsed laserBuchner, S. / McMorrow, D. / Sternberg, A. / Massengill, L. / Pease, R.L. / Maher, M. et al. | 2001
- 438
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HP-7 Single-Event Testing Using Heavy Ion Irradiation Through Thick Layers of MaterialSwift, G. M. / Millward, D. G. / Clark, H. L. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 438
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Single-event testing using heavy ion irradiation through thick layers of materialSwift, G.M. / Millward, D.G. / Clark, H.L. et al. | 2001
- 445
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WP-1 Memory Irradiation Measurements for the European SMART-1 SpacecraftNovak, D. / Kerek, A. / Norlin, L. O. / Dajko, G. / Fenyvesi, A. / Molnar, J. / Szekely, G. / Granholm, L. / Wallin, S. / Matilainen, A. et al. | 2002
- 445
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Memory irradiation measurements for the European SMART-1 spacecraftNovak, D. / Kerek, A. / Norlin, L.-O. / Dajko, G. / Fenyvesi, A. / Molnar, J. / Szekely, G. / Granholm, L. / Wallin, S. / Matilainen, A. et al. | 2001
- 450
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WP-2 Spectral Response of Gamma and Electron Irradiated Pin PhotodiodeOnoda, S. / Hirao, T. / Laird, J. S. / Mori, H. / Okamoto, T. / Koizumi, Y. / Itoh, H. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 450
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Spectral response of gamma and electron irradiated pin photodiodeOnoda, S. / Hirao, T. / Laird, J.S. / Mori, H. / Okamoto, T. / Koizumi, Y. / Itoh, H. et al. | 2001
- 455
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WP-3 Characterization of Power Transistors and Low Voltage Logic Circuits at High Dose and TemperatureLe Gac, J. P. / Giraud, A. / Brichard, B. / Brisset, C. / Picard, C. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 455
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Characterization of power transistors and low voltage logic circuits at high dose and temperatureLe Gac, J.-P. / Giraud, A. / Brichard, B. / Brisset, C. / Picard, C. et al. | 2001
- 461
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WP-4 TH7890M & TH7891M Image Sensors for Star TrackersJulien, F. / Vaillant, J. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 461
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TH7890M & TH7891M Image sensors for star trackersJulien, F. / Vaillant, J. et al. | 2001
- 464
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WP-6 Total-Dose Tolerance of the Commercial American Microsystems Inc. (AMI) 0.35 mum CMOS ProcessLacoe, R. C. / Osborn, J. V. / Mayer, D. C. / Brown, S. / Gambles, J. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 464
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Total-dose tolerance of the commercial American Microsystems Inc. (AMI) 0.35-/spl mu/m CMOS processLacoe, R.C. / Osborn, J.V. / Mayer, D.C. / Brown, S. et al. | 2001
- 469
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Observation of changes in the single event upset rate in 4MB SRAM due to intervening materials in a neutron environmentWilkins, R. / Huff, H. / Badhwar, G.D. / Moore, J. / Zhou, J. / Singleterry, R.C. / Wender, S.A. / Fogarty, T.N. et al. | 2001
- 469
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WP-7 Observation of Changes in the Single Event Upset Rate in 4MB SRAM Due to Intervening Materials in a Neutron EnvironmentWilkins, R. / Huff, H. / Badhwar, G. D. / Moore, J. / Zhou, J. / Singleterry, R. C. / Wender, S. A. / Fogarty, T. N. / RADECS Association / TIMA et al. | 2002
- 474
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Ion beam testing of SRAM-based FPGA'sBellato, M. / Ceschia, M. / Menichelli, M. / Papi, A. / Wyss, J. / Paccagnella, A. et al. | 2001
- 474
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WP-8 Ion Beam Testing of SRAM-based FPGA'sBellato, M. / Ceschia, M. / Menichelli, M. / Papi, A. / Wyss, J. / Paccagnella, A. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 481
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WP-9 Radiation Effects on Commercial CCDsNuns, T. / David, J.-P. / Loquet, J.-G. / Gardillou, F. / Lescure, M. / Barde, S. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 481
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Radiation effects on commercial CCDsNuns, T. / David, J.-P. / Loquet, J.-G. / Gardillou, F. / Lescure, M. / Barde, S. et al. | 2001
- 488
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WP-12 The Influence of Dose Rate on Total Dose Radiation Effects on MOSFETsSharp, R. E. / Pater, S. L. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 488
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The influence of dose rate on total dose radiation effects on MOSFETsSharp, R.E. / Pater, S.L. et al. | 2001
- 494
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Characterization of low voltage SRAM response to gamma radiationGiraud, A. / Le Gac, J.-P. / Armani, J.M. et al. | 2001
- 494
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WP-13 Characterization of Low Voltage SRAM Response to Gamma RadiationGiraud, A. / Le Gac, J. P. / Armani, J. M. / RADECS Association / TIMA / Institute of Electrical and Electronics Engineers et al. | 2002
- 501
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Author index| 2001
- i
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2001 6th European Conference on Radiation and Its Effects on Components and Systems| 2001
- ix
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Reviewers| 2001
- xi
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RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605)| 2001