Analysis and modelling of the electric field in the Gate oxide of 4H-SiC DMOSFET (Englisch)
- Neue Suche nach: Di Benedetto, Luigi
- Neue Suche nach: Licciardo, Gian-Domenico
- Neue Suche nach: Rubino, Alfredo
- Neue Suche nach: Di Benedetto, Luigi
- Neue Suche nach: Licciardo, Gian-Domenico
- Neue Suche nach: Rubino, Alfredo
In:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
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169-172
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2016
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Analysis and modelling of the electric field in the Gate oxide of 4H-SiC DMOSFET
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Beteiligte:Di Benedetto, Luigi ( Autor:in ) / Licciardo, Gian-Domenico ( Autor:in ) / Rubino, Alfredo ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.11.2016
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Format / Umfang:224417 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Threshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: Relation to distribution of oxide/semiconductor interface state densityTapajna, M. / Valik, L. / Gregusova, D. / Frohlich, K. / Gucmann, F. / Hashizume, T. / Kuzmlk, J. et al. | 2016
- 5
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Pseudo-vertical GaN-based trench gate metal oxide semiconductor field effect transistorHentschel, Rico / Wachowiak, Andre / Groser, Andreas / Jahn, Andreas / Merkel, Ulrich / Wille, Ada / Kalisch, Holger / Vescan, Andrei / Schmult, Stefan / Mikolajick, Thomas et al. | 2016
- 9
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DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT structures with Al2O3 gate dielectric prepared by various techniquesGucmann, F. / Gregusova, D. / Valik, L. / Tapajna, M. / Hascik, S. / Husekova, K. / Frohlich, K. / Pohorelec, O. / Kuzmik, J. et al. | 2016
- 13
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Analysis of hybrid pair Si IGBT-SiC diode for very high power applicationsNawaz, Muhammad / Chimento, Filippo et al. | 2016
- 19
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SiO2/4H-SiC interface traps effects on the input capacitance of DMOSFETLicciardo, Gian-Domenico / Di Benedetto, Luigi et al. | 2016
- 23
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Optimization of semi-insulating GaAs detector for thermal neutron detectionSagatova, A. / Zat'ko, B. / Sedlackova, K. / Necas, V. / Bohacek, P. et al. | 2016
- 27
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Towards III-nitride nano-LED based single photon emitters: Technology and applicationsHardtdegen, H. / Mikulics, M. et al. | 2016
- 33
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GaAs-based photodetector with applied PDMS membrane with photonic crystal in the surfacePudis, D. / Tlaczala, M. / Suslik, L. / Dawidowski, W. / Sciana, B. / Kovac, J. / Goraus, M. / Gaso, P. / Durisova, J. / Zborowska-Lindert, I. et al. | 2016
- 37
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Improving light extraction efficiency of PhC LEDHronec, P. / Kovac, J. / Skriniarova, J. / Uherek, F. et al. | 2016
- 41
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Photoluminescence of InGaN/GaN MQW structures — technological aspectsHospodkova, A. / Pangrac, J. / Oswald, J. / Kuldova, K. / Zikova, M. / Hulicius, E. et al. | 2016
- 45
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Electrical characterisation of MIS photoanodes annealed under different conditions for solar fuel generationMikolasek, M. / Racko, J. / Rehacek, V. / Harmatha, L. / Tapajna, M. / Frohlich, K. et al. | 2016
- 49
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Electro-physical 2-D/3-D TCAD analysis of reduce the temperature-related negative effects on silicon heterojunction solar cell for concentrated photovoltaicPribitny, P. / Mikolasek, M. / Marek, J. / Chvala, A. / Donoval, D. et al. | 2016
- 53
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Polymer 3D photonic crystals for LEDGoraus, M. / Pudis, D. / Gaso, P. / Suslik, L. / Jandura, D. et al. | 2016
- 57
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GaAsSb/InAs QDs structures for advanced telecom lasersZikova, M. / Hospodkova, A. / Pangrac, J. / Oswald, J. / Hulicius, E. et al. | 2016
- 61
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Minimization of self-heating in SOI MOSFET devices with SELBOX structureNarayanan, M. R. / Nashash, Hasan Al et al. | 2016
- 65
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Highly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrateFox, A. / Mikulics, M. / Marso, M. / Kocan, M. / Sofer, Z. / Kordos, P. / Luth, H. / Schubert, J. / Grutzmacher, D. / Hardtdegen, H. et al. | 2016
- 69
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InGaN mesoscopic structures for low energy consumption nano-opto-electronicsLuth, H. / Mikulics, M. / Winden, A. / Trellenkamp, St. / Sofer, Z. / Marso, M. / Grutzmacher, D. / Hardtdegen, H. et al. | 2016
- 73
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Electrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip linesMikulics, M. / Marso, M. / Adam, R. / Schuck, M. / Fox, A. / Sobolewski, R. / Kordos, P. / Luth, H. / Grutzmacher, D. / Hardtdegen, H. et al. | 2016
- 77
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Hybrid optoelectronics based on a nanocrystal/III-N nano-LED platformMarso, M. / Mikulics, M. / Luth, H. / Sofer, Z. / Kordos, P. / Hardtdegen, H. et al. | 2016
- 81
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Fabrication of UV sources for novel lithographical techniques: Development of nano-LED etching proceduresMoers, J. / Mikulics, M. / Marso, M. / Trellenkamp, St. / Sofer, Z. / Grutzmacher, D. / Hardtdegen, H. et al. | 2016
- 85
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The effect of process parameters and annealing on the properties of Ti/Pt films for miniature temperature sensorsHotovy, I. / Hascik, S. / Predanocy, M. / Mikolasek, M. / Rehacek, V. / Kostic, I. / Nemec, P. / Bencurova, A. / Rossberg, D. / Spiess, L. et al. | 2016
- 89
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Multi-bit adder design using ME-MTJ technologySharma, Nishtha / Marshall, Andrew / Bird, Jonathan / Dowben, Peter et al. | 2016
- 93
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Technology of AlSb/GaSb based LED nanostructures for high temperature superlinear luminescenceHulicius, E. / Hospodkova, A. / Pangrac, J. / Zikova, M. et al. | 2016
- 97
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3D energy harvester with tunable resonant frequencyJanicek, V. et al. | 2016
- 101
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Reducing crosstalk in the internal structures of integrated circuitsNovak, J. / Foit, J. et al. | 2016
- 105
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Magnetically levitated and guided systemsPuci, Florian et al. | 2016
- 109
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Model of the triboelectric generatorHusak, M. / Bily, A. et al. | 2016
- 113
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Gas analyzer for quick indicative measurementsHusak, M. / Laposa, A. / Kroutil, J. et al. | 2016
- 117
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Acoustic method for respiratory monitoringKroutil, Jiri / Laposa, Alexandr / Husak, Miroslav / Sio, Ratanak et al. | 2016
- 121
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Gas sensor based on sputtered NiO thin filmsPredanocy, M. / Hotovy, I. / Rehacek, V. et al. | 2016
- 125
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Gold nanoisland arrays prepared by sputtering and bio-functionalization of their surfacesSzabo, O. / Tvarozek, V. / Kovacova, S. / Novotny, I. et al. | 2016
- 129
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Study of repetitive avalanche stress invoked degradation of electrical properties of DMOS and TrenchMOS transistorsMarek, Juraj / Stuchlikova, Lubica / Jagelka, Martin / Chvala, Ales / Pribytny, Patrik / Donoval, Martin / Donoval, Daniel et al. | 2016
- 133
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Study of negative electron beam nanoresist HSQ on GaAs substrateAndok, R. / Bencurova, A. / Kostic, I. / Ritomsky, A. / Skriniarova, J. / Vutova, K. et al. | 2016
- 137
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Simple patterning method of sub-micro- and nanometer structures for gas sensorDurina, P. / Bencurova, A. / Truchly, M. / Andok, R. / Kostic, I. / Grancic, B. / Plecenik, A. / Kus, P. / Vutova, K. / Koleva, E. et al. | 2016
- 141
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Particle detectors based on 4H-SiC epitaxial layer and their propertiesZat'ko, B. / Hrubcin, L. / Sagatova, A. / Bohacek, P. / Dubecky, F. / Sedlackova, K. / Sekacova, M. / Arbet, J. / Necas, V. / Skuratov, V. A. et al. | 2016
- 145
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Investigation of AlGaN/GaN Schottky structures by deep level fourier transient spectroscopy with optical excitationStuchlikova, L. / Kosa, A. / Szobolovszky, R. / Petrus, M. / Harmatha, L. / Delage, S. L. / Kovac, J. et al. | 2016
- 149
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DLTFS study of InGaAs/AlInAs heterostructures grown on n-InP:S substratesKosa, A. / Stuchlikova, L. / Harmatha, L. / Kovac, J. / Badura, M. / Bielak, K. / Sciana, B. / Tlaczala, M. et al. | 2016
- 153
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Impedance characterisation of NiO based gas sensorMikolasek, M. / Predanocy, M. / Jom, P. / Hotovy, I. et al. | 2016
- 157
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Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition processBabchenko, O. / Vanko, G. / Dzuba, J. / Izak, T. / Vojs, M. / Lalinsky, T. / Kromka, A. et al. | 2016
- 161
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Characterization and gas sensor testing of single and mixed metal oxides based on NiO and TiO2 thin filmsHotovy, I. / Predanocy, M. / Mikolasek, M. / Benko, P. / Rehacek, V. et al. | 2016
- 165
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3-D device and circuit electrothermal simulations of power integrated circuit including packageChvala, Ales / Benko, Peter / Pribytny, Patrik / Marek, Juraj / Donoval, Daniel et al. | 2016
- 169
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Analysis and modelling of the electric field in the Gate oxide of 4H-SiC DMOSFETDi Benedetto, Luigi / Licciardo, Gian-Domenico / Rubino, Alfredo et al. | 2016
- 173
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Impact of repetitive UIS on modern GaN power devicesMarek, Juraj / Stuchlikova, Lubica / Jagelka, Martin / Chvala, Ales / Pribytny, Patrik / Donoval, Martin / Donoval, Daniel et al. | 2016
- 177
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Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTsBlaho, M. / Gregusova, D. / Hascik, S. / Seifertova, A. / Tapajna, M. / Soltys, J. / Satka, A. / Nagy, L. / Chvala, A. / Marek, J. et al. | 2016
- 181
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Scaling and traps induced degradation of cutoff frequency in GaN HEMTUbochi, B. C. / Faramehr, S. / Ahmeda, K. / Igic, P. / Kalna, K. et al. | 2016
- 185
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Trap analysis of GaN-based heterostructures using current transients mesurementsFlorovic, M. / Skriniarova, J. / Gregusova, D. / Kovac, J. / Kordos, P. et al. | 2016
- 189
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Temperature-dependent of sub-threshold slope of AlGaN/GaN MOSHFETs with HfO2 gate oxide prepared by ALDStoklas, Roman / Gregusova, Dagmar / Frohlich, Karol / Kuzmik, Jan et al. | 2016
- 193
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Nanocrystalline diamond films for electronic monitoring of gas and organic moleculesKromka, A. / Izak, T. / Davydova, M. / Rezek, B. et al. | 2016
- 199
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Modelling the I-V-T characteristics of 4H-SiC DMOSFET in presence of SiO2/SiC interface traps and fixed oxideLicciardo, Gian-Domenico / Di Benedetto, Luigi / Rubino, Alfredo et al. | 2016
- 203
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The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devicesAhmeda, K. / Faramehr, S. / Igic, P. / Kalna, K. / Duffy, S. J. / Soltani, A. / Benbakhti, B. et al. | 2016
- 207
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Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown A12O3 gate dielectricTapajna, M. / Husekova, K. / Pohorelec, O. / Valik, L. / Hascik, S. / Gucmann, F. / Frohlich, K. / Gregusova, D. / Kuzmlk, J. et al. | 2016
- 211
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RF performance optimization of SiGe:C transistors via Ge-B doping strategies and RTPYarimbiyik, A. Emre / Oksuz, Duygu Isler / Cesur, Enes et al. | 2016
- 215
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Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devicesHuran, J. / Bohacek, P. / Sasinkova, V. / Kleinova, A. / Mikolasek, M. / Kobzev, A.P. / Hrubcin, L. / Arbet, J. / Sekacova, M. et al. | 2016
- 219
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Investigation of metal contacts on semi-insulating GaAs: Physics, technology and applicationsDubecky, F. / Vanko, G. / Kindl, D. / Hubik, P. / Gombia, E. / Bohacek, P. / Sekacova, M. / Zat'ko, B. et al. | 2016
- 223
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Nanostructuring by femtosecond laser ablation and RIE for MEMS and microfluidic systems fabricationZehetner, J. / Vanko, G. / Dzuba, J. / Lalinsky, T. et al. | 2016
- 227
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Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membraneDzuba, J. / Vanko, G. / Babchenko, O. / Lalinsky, T. / Horvat, F. / Szarvas, M. / Kovac, T. / Hucko, B. et al. | 2016
- 231
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Electrical properties of back-to-back metal/insulator/semiconductor diodes based on AlGaN/GaN heterostructureOsvald, J. et al. | 2016
- 235
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Evaluation of TIGBT field stop layer generated by helium implantationPechal, Radim / Dornak, Lubomir / Vavro, Juraj / Kozelsky, Adam / Klimsza, Adam et al. | 2016
- 239
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Incremental control techniques for layout modificationVacula, Patrik / Kote, Vlastimil / Kubacak, Adam / Lzicar, Milan / Zeleny, Radek / Husak, Miroslav / Jakovenko, Jiri et al. | 2016
- 243
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The influence of ozone pre-treatment in HfO2-based resistive switching memory structuresBenko, P. / Mikolasek, M. / Harmatha, L. / Frohlich, K. et al. | 2016
- 247
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Author index| 2016
- c1
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Front cover| 2016
- I
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Front matters| 2016
- V
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Contents| 2016
- XI
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Preface| 2016