14nm FDSOI technology for high speed and energy efficient applications (Englisch)
- Neue Suche nach: Weber, O.
- Neue Suche nach: Josse, E.
- Neue Suche nach: Andrieu, F.
- Neue Suche nach: Cros, A.
- Neue Suche nach: Richard, E.
- Neue Suche nach: Perreau, P.
- Neue Suche nach: Baylac, E.
- Neue Suche nach: Degors, N.
- Neue Suche nach: Gallon, C.
- Neue Suche nach: Perrin, E.
- Neue Suche nach: Chhun, S.
- Neue Suche nach: Petitprez, E.
- Neue Suche nach: Delmedico, S.
- Neue Suche nach: Simon, J.
- Neue Suche nach: Druais, G.
- Neue Suche nach: Lasserre, S.
- Neue Suche nach: Mazurier, J.
- Neue Suche nach: Guillot, N.
- Neue Suche nach: Bernard, E.
- Neue Suche nach: Bianchini, R.
- Neue Suche nach: Parmigiani, L.
- Neue Suche nach: Gerard, X.
- Neue Suche nach: Pribat, C.
- Neue Suche nach: Gourhant, O.
- Neue Suche nach: Abbate, F.
- Neue Suche nach: Gaumer, C.
- Neue Suche nach: Beugin, V.
- Neue Suche nach: Gouraud, P.
- Neue Suche nach: Maury, P.
- Neue Suche nach: Lagrasta, S.
- Neue Suche nach: Barge, D.
- Neue Suche nach: Loubet, N.
- Neue Suche nach: Beneyton, R.
- Neue Suche nach: Benoit, D.
- Neue Suche nach: Zoll, S.
- Neue Suche nach: Chapon, J.-D.
- Neue Suche nach: Babaud, L.
- Neue Suche nach: Bidaud, M.
- Neue Suche nach: Gregoire, M.
- Neue Suche nach: Monget, C.
- Neue Suche nach: Le-Gratiet, B.
- Neue Suche nach: Brun, P.
- Neue Suche nach: Mellier, M.
- Neue Suche nach: Pofelski, A.
- Neue Suche nach: Clement, L.R.
- Neue Suche nach: Bingert, R.
- Neue Suche nach: Puget, S.
- Neue Suche nach: Kruck, J.-F.
- Neue Suche nach: Hoguet, D.
- Neue Suche nach: Scheer, P.
- Neue Suche nach: Poiroux, T.
- Neue Suche nach: Manceau, J.-P.
- Neue Suche nach: Rafik, M.
- Neue Suche nach: Rideau, D.
- Neue Suche nach: Jaud, M.-A.
- Neue Suche nach: Lacord, J.
- Neue Suche nach: Monsieur, F.
- Neue Suche nach: Grenouillet, L.
- Neue Suche nach: Vinet, M.
- Neue Suche nach: Liu, Q.
- Neue Suche nach: Doris, B.
- Neue Suche nach: Celik, M.
- Neue Suche nach: Fetterolf, S.P.
- Neue Suche nach: Faynot, O.
- Neue Suche nach: Haond, M.
- Neue Suche nach: Weber, O.
- Neue Suche nach: Josse, E.
- Neue Suche nach: Andrieu, F.
- Neue Suche nach: Cros, A.
- Neue Suche nach: Richard, E.
- Neue Suche nach: Perreau, P.
- Neue Suche nach: Baylac, E.
- Neue Suche nach: Degors, N.
- Neue Suche nach: Gallon, C.
- Neue Suche nach: Perrin, E.
- Neue Suche nach: Chhun, S.
- Neue Suche nach: Petitprez, E.
- Neue Suche nach: Delmedico, S.
- Neue Suche nach: Simon, J.
- Neue Suche nach: Druais, G.
- Neue Suche nach: Lasserre, S.
- Neue Suche nach: Mazurier, J.
- Neue Suche nach: Guillot, N.
- Neue Suche nach: Bernard, E.
- Neue Suche nach: Bianchini, R.
- Neue Suche nach: Parmigiani, L.
- Neue Suche nach: Gerard, X.
- Neue Suche nach: Pribat, C.
- Neue Suche nach: Gourhant, O.
- Neue Suche nach: Abbate, F.
- Neue Suche nach: Gaumer, C.
- Neue Suche nach: Beugin, V.
- Neue Suche nach: Gouraud, P.
- Neue Suche nach: Maury, P.
- Neue Suche nach: Lagrasta, S.
- Neue Suche nach: Barge, D.
- Neue Suche nach: Loubet, N.
- Neue Suche nach: Beneyton, R.
- Neue Suche nach: Benoit, D.
- Neue Suche nach: Zoll, S.
- Neue Suche nach: Chapon, J.-D.
- Neue Suche nach: Babaud, L.
- Neue Suche nach: Bidaud, M.
- Neue Suche nach: Gregoire, M.
- Neue Suche nach: Monget, C.
- Neue Suche nach: Le-Gratiet, B.
- Neue Suche nach: Brun, P.
- Neue Suche nach: Mellier, M.
- Neue Suche nach: Pofelski, A.
- Neue Suche nach: Clement, L.R.
- Neue Suche nach: Bingert, R.
- Neue Suche nach: Puget, S.
- Neue Suche nach: Kruck, J.-F.
- Neue Suche nach: Hoguet, D.
- Neue Suche nach: Scheer, P.
- Neue Suche nach: Poiroux, T.
- Neue Suche nach: Manceau, J.-P.
- Neue Suche nach: Rafik, M.
- Neue Suche nach: Rideau, D.
- Neue Suche nach: Jaud, M.-A.
- Neue Suche nach: Lacord, J.
- Neue Suche nach: Monsieur, F.
- Neue Suche nach: Grenouillet, L.
- Neue Suche nach: Vinet, M.
- Neue Suche nach: Liu, Q.
- Neue Suche nach: Doris, B.
- Neue Suche nach: Celik, M.
- Neue Suche nach: Fetterolf, S.P.
- Neue Suche nach: Faynot, O.
- Neue Suche nach: Haond, M.
- Aufsatz (Konferenz) / Elektronische Ressource
-
Titel:14nm FDSOI technology for high speed and energy efficient applications
-
Beteiligte:Weber, O. ( Autor:in ) / Josse, E. ( Autor:in ) / Andrieu, F. ( Autor:in ) / Cros, A. ( Autor:in ) / Richard, E. ( Autor:in ) / Perreau, P. ( Autor:in ) / Baylac, E. ( Autor:in ) / Degors, N. ( Autor:in ) / Gallon, C. ( Autor:in ) / Perrin, E. ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsdatum:01.06.2014
-
Format / Umfang:1790924 byte
-
ISBN:
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Device and technology implications of the Internet of ThingsAitken, Robert / Chandra, Vikas / Myers, James / Sandhu, Bal / Shifren, Lucian / Yeric, Greg et al. | 2014
- 1
-
Study of the impact of charge-neutrality level (CNL) of grain boundary interface trap on device variability and P/E cycling endurance of 3D NAND flash memoryChen, Wei-Chen / Lue, Hang-Ting / Hsiao, Yi-Hsuan / Lin, Xi-Wei / Huang, Jacky / Shih, Yen-Hao / Lu, Chih-Yuan et al. | 2014
- 1
-
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOISeo, K. -I. / Haran, B. / Gupta, D. / Guo, D. / Standaert, T. / Xie, R. / Shang, H. / Alptekin, E. / Bae, D. -I. / Bae, G. et al. | 2014
- 1
-
High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size SiKim, S. H. / Ikku, Y. / Yokoyama, M. / Nakane, R. / Li, J. / Kao, Y. C. / Takenaka, M. / Takagi, S. et al. | 2014
- 1
-
Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memoriesJan, Guenole / Thomas, Luc / Le, Son / Lee, Yuan-Jen / Liu, Huanlong / Zhu, Jian / Tong, Ru-Ying / Pi, Keyu / Wang, Yu-Jen / Shen, Dongna et al. | 2014
- 1
-
Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyondAndo, T. / Kannan, B. / Kwon, U. / Lai, W. L. / Linder, B. P. / Cartier, E. A. / Haight, R. / Copel, M. / Bruley, J. / Krishnan, S. A. et al. | 2014
- 1
-
Group IV channels for 7nm FinFETs: Performance for SoCs power and speed metricsBardon, M. Garcia / Raghavan, P. / Eneman, G. / Schuddinck, P. / Dehan, M. / Mercha, A. / Thean, A. / Verkest, D. / Steegen, A. et al. | 2014
- 1
-
23% faster program and 40% energy reduction of carbon nanotube non-volatile memory with over 1011 enduranceNing, Sheyang / Iwasaki, Tomoko Ogura / Shimomura, Kazuya / Johguchi, Koh / Rosendale, Glen / Manning, Monte / Viviani, Darlene / Rueckes, Thomas / Takeuchi, Ken et al. | 2014
- 1
-
TSV technology and challenges for 3D stacked DRAMChang Yeol Lee, / Sungchul Kim, / Hongshin Jun, / Kyung Whan Kim, / Sung Joo Hong, et al. | 2014
- 1
-
Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cellUeda, Akitsugu / Jung, Seung-Min / Mizutani, Tomoko / Kumar, Anil / Saraya, Takuya / Hiramoto, Toshiro et al. | 2014
- 1
-
Integration of silicon photonics in bulk CMOSMeade, Roy / Orcutt, Jason S. / Mehta, Karan / Tehar-Zahav, Ofer / Miller, Daniel / Georgas, Michael / Moss, Ben / Chen Sun, / Yu-Hsin Chen, / Shainline, Jeffrey et al. | 2014
- 1
-
A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applicationsGu, Xun / Kikuchi, Yoshiyuki / Nozawa, Toshihisa / Samukawa, Seiji et al. | 2014
- 1
-
Device-level PBTI-induced timing jitter increase in circuit-speed random logic operationLu, J.W. / Vaz, C. / Campbell, J.P. / Ryan, J.T. / Cheung, K.P. / Jiao, G.F. / Bersuker, G. / Young, C.D. et al. | 2014
- 1
-
Physics based PBTI model for accelerated estimation of 10 year lifetimeZafar, S. / Kerber, A. / Muralidhar, R. et al. | 2014
- 1
-
A 1TnR array architecture using a one-dimensional selection deviceChiyui Ahn, / Zizhen Jiang, / Chi-Shuen Lee, / Hong-Yu Chen, / Liang, Jiale / Liyanage, Luckshitha S. / Wong, H.-S. Philip et al. | 2014
- 1
-
IoT design space challenges: Circuits and systemsBlaauw, D. / Sylvester, D. / Dutta, P. / Lee, Y. / Lee, I. / Bang, S. / Kim, Y. / Kim, G. / Pannuto, P. / Kuo, Y.-S. et al. | 2014
- 1
-
Direct measurement of the dynamic variability of 0.120µm2 SRAM cells in 28nm FD-SOI technologyHusseini, J. El / Garros, X. / Subirats, A. / Makosiej, A. / Weber, O. / Thomas, O. / Huard, V. / Federspiel, X. / Reimbold, G. et al. | 2014
- 1
-
Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structureMajumdar, K. / Clark, R. / Ngai, T. / Tapily, K. / Consiglio, S. / Bersch, E. / Matthews, K. / Stinzianni, E. / Trickett, Y. / Nakamura, G. et al. | 2014
- 1
-
ForewordSchruefer, Klaus / Hiramoto, Toshiro et al. | 2014
- 1
-
Flash-based nonvolatile programmable switch for low-power and high-speed FPGA by adjacent integration of MONOS/logic and novel programming schemeZaitsu, Koichiro / Tatsumura, Kosuke / Matsumoto, Mari / Oda, Masato / Fujita, Shinobu / Yasuda, Shinichi et al. | 2014
- 1
-
Investigation of InxGa1−xAs FinFET architecture with varying indium (x) concentration and quantum confinementArun, VT / Agrawal, Nidhi / Lavallee, Guy / Cantoro, Mirco / Kim, Sang-Su / Kim, Dong-Won / Datta, Suman et al. | 2014
- 1
-
Impact of contact and local interconnect scaling on logic performanceDatta, S. / Pandey, R. / Agrawal, A. / Gupta, S. K. / Arghavani, R. et al. | 2014
- 1
-
Cost and power/performance optimized 20nm SoC technology for advanced mobile devicesNallapati, G. / Zhu, J. / Wang, J. / Sheu, J.Y. / Cheng, K.L. / Gan, C. / Yang, D. / Cai, M. / Cheng, J. / Ge, L. et al. | 2014
- 1
-
Monolithic three-dimensional integration of carbon nanotube FETs with silicon CMOSShulaker, Max M. / Saraswat, Krishna / Wong, H.-S. Philip / Mitra, Subhasish et al. | 2014
- 1
-
Enhanced drivability of high-Vbd dual-oxide-based complementary BEOL-FETs for compact on-chip pre-driver applicationsSunamura, H. / Inoue, N. / Furutake, N. / Saito, S. / Narihiro, M. / Hane, M. / Hayashi, Y. et al. | 2014
- 1
-
Customer value creation in the information explosion eraShimada, Keiichiro et al. | 2014
- 1
-
14nm FDSOI technology for high speed and energy efficient applicationsWeber, O. / Josse, E. / Andrieu, F. / Cros, A. / Richard, E. / Perreau, P. / Baylac, E. / Degors, N. / Gallon, C. / Perrin, E. et al. | 2014
- 1
-
Ultra thinning down to 4-µm using 300-mm wafer proven by 40-nm node 2Gb DRAM for 3D multi-stack WOW applicationsKim, Y. S. / Kodama, S. / Mizushima, Y. / Maeda, N. / Kitada, H. / Fujimoto, K. / Nakamura, T. / Suzuki, D. / Kawai, A. / Arai, K. et al. | 2014
- 1
-
An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substratesWaldron, N. / Merckling, C. / Guo, W. / Ong, P. / Teugels, L. / Ansar, S. / Tsvetanova, D. / Sebaai, F. / van Dorp, D.H. / Milenin, A. et al. | 2014
- 1
-
Paper memory by all printing technologyLien, Der-Hsien / Kuo, Zhen-Kai / Huang, Teng-Han / Liao, Ying-Chih / Lee, Si-Chen / He, Hau et al. | 2014
- 1
-
A highly scalable STT-MRAM fabricated by a novel technique for shrinking a magnetic tunnel junction with reducing processing damageIba, Y. / Takahashi, A. / Hatada, A. / Nakabayashi, M. / Yoshida, C. / Yamazaki, Y. / Tsunoda, K. / Sugii, T. et al. | 2014
- 1
-
First demonstration of strained SiGe nanowires TFETs with ION beyond 700µA/µmVillalon, A. / Le Royer, C. / Nguyen, P. / Barraud, S. / Glowacki, F. / Revelant, A. / Selmi, L. / Cristoloveanu, S. / Tosti, L. / Vizioz, C. et al. | 2014
- 1
-
The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme designLiao, M.-H. / Huang, S. C. / Liu, C. Y. / Chen, P. G. / Kao, S. C. / Lien, C. et al. | 2014
- 1
-
Applying a redundancy scheme to address post-assembly yield loss in 3D FPGAsCamarota, Rafael C / Wong, Jennifer / Liu, Henley / McGuire, Pat et al. | 2014
- 1
-
NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM ApplicationWan Gee Kim, / Hyun Min Lee, / Beom Yong Kim, / Kyoo Ho Jung, / Tae Geun Seong, / Seonghyun Kim, / Ha Chang Jung, / Hyo June Kim, / Jong Hee Yoo, / Hyung Dong Lee, et al. | 2014
- 1
-
1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice filmsTai, M. / Ohyanagi, T. / Kinoshita, M. / Morikawa, T. / Akita, K. / Kato, S. / Shirakawa, H. / Araidai, M. / Shiraishi, K. / Takaura, N. et al. | 2014
- 1
-
Anti-fuse memory array embedded in 14nm FinFET CMOS with novel selector-less bit-cell featuring self-rectifying characteristicsLiu, Y. / Chi, M.H. / Mittal, A. / Aluri, G. / Uppal, S. / Paliwoda, P. / Banghart, E. / Korablev, K. / Liu, B. / Nam, M. et al. | 2014
- 1
-
Comprehensive statistical investigation of STT-MRAM thermal stabilityHofmann, Karl / Knobloch, Klaus / Peters, Christian / Allinger, Robert et al. | 2014
- 1
-
Verification on the extreme scalability of STT-MRAM without loss of thermal stability below 15 nm MTJ cellKim, Ju Hyun / Lim, W. C. / Pi, U. H. / Lee, J. M. / Kim, W. K. / Kim, J. H. / Kim, K. W. / Park, Y. S. / Park, S. H. / Kang, M. A. et al. | 2014
- 1
-
Novel Critical Path Aware transistor optimization for mobile SoC device-circuit co-designMojumder, Niladri N. / Song, S. C. / Wang, Joseph / Lin, Ken / Rim, Ken / Xu, Jeff / Yeap, Geoffrey et al. | 2014
- 1
-
Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM deviceGoux, L. / Fantini, A. / Redolfi, A. / Chen, C.Y. / Shi, F.F. / Degraeve, R. / Chen, Y.Y. / Witters, T. / Groeseneken, G. / Jurczak, M. et al. | 2014
- 1
-
Process technology scaling in an increasingly interconnect dominated worldClarke, James S. / George, Christopher / Jezewski, Christopher / Caro, Arantxa Maestre / Michalak, David / Torres, Jessica et al. | 2014
- 1
-
What can we do about barrier layer scaling to 5 nm node technology ?Koike, Junichi et al. | 2014
- 1
-
Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)Woo, Jiyong / Jeonghwan Song, / Kibong Moon, / Lee, Ji Hyun / Euijun Cha, / Prakash, Amit / Daeseok Lee, / Sangheon Lee, / Jaesung Park, / Yunmo Koo, et al. | 2014
- 1
-
Copyright| 2014
- 1
-
High performance mobile SoC design and technology co-optimization to mitigate high-K metal gate process induced variationsYang, Sam / Ge, Lixin / Lin, Jeff / Han, Michael / Yang, Da / Wang, Joseph / Mahmood, Kasim / Song, Tony / Yuan, Dana / Seo, Dongwon et al. | 2014
- 1
-
Bottom oxidation through STI (BOTS) — A novel approach to fabricate dielectric isolated FinFETs on bulk substratesCheng, K. / Seo, S. / Faltermeier, J. / Lu, D. / Standaert, T. / Ok, I. / Khakifirooz, A. / Vega, R. / Levin, T. / Li, J. et al. | 2014
- 1
-
15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last processMitard, J. / Witters, L. / Loo, R. / Lee, S.H. / Sun, J.W. / Franco, J. / Ragnarsson, L.-A. / Brand, A. / Lu, X. / Yoshida, N. et al. | 2014
- 1
-
Demonstration of ultimate CMOS based on 3D stacked InGaAs-OI/SGOI wire channel MOSFETs with independent back gateIrisawa, T. / Ikeda, K. / Moriyama, Y. / Oda, M. / Mieda, E. / Maeda, T. / Tezuka, T. et al. | 2014
- 1
-
Scaling to 50-nm C-axis aligned crystalline In-Ga-Zn oxide FET with surrounded channel structure and its application for less-than-5-nsec writing speed memoryKobayashi, Y. / Matsubayashi, D. / Nagatsuka, S. / Yakubo, Y. / Atsumi, T. / Shionoiri, Y. / Hondo, S. / Yamamoto, T. / Okazaki, Y. / Nagai, M. et al. | 2014
- 1
-
Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyondHashemi, Pouya / Balakrishnan, Karthik / Majumdar, Amlan / Khakifirooz, Ali / Kim, Wanki / Baraskar, Ashish / Yang, Li A. / Chan, Kevin / Engelmann, Sebastian U. / Ott, John A. et al. | 2014
- 1
-
Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-sShin, C.-S. / Park, W.-K. / Shin, SH. / Cho, YD. / Ko, DH. / Kim, T.-W. / Koh, D.H. / Kwon, HM. / Hill, R. J. W. / Kirsch, P. et al. | 2014
- 1
-
A copper ReRAM cell for Storage Class Memory applicationsSills, Scott / Yasuda, Shuichiro / Strand, Jonathan / Calderoni, Alessandro / Aratani, Katsuhisa / Johnson, Adam / Ramaswamy, Nirmal et al. | 2014
- 1
-
Band-to-band tunneling current enhancement utilizing isoelectronic trap and its application to TFETsMori, Takahiro / Morita, Yukinori / Miyata, Noriyuki / Migita, Shinji / Fukuda, Koichi / Masahara, Meishoku / Yasuda, Tetsuji / Ota, Hiroyuki et al. | 2014
- 1
-
Time-dependent variation: A new defect-based prediction methodologyDuan, M. / Zhang, J. F. / Ji, Z. / Zhang, W. / Kaczer, B. / Schram, T. / Ritzenthaler, R. / Thean, A. / Groeseneken, G. / Asenov, A. et al. | 2014
- 1
-
Low-loss silicon interposer for three-dimensional system integration with embedded microfluidic coolingThadesar, Paragkumar A. / Zheng, Li / Bakir, Muhannad S. et al. | 2014
- 1
-
Systematic study of RTN in nanowire transistor and enhanced RTN by hot carrier injection and negative bias temperature instabilityOta, Kensuke / Saitoh, Masumi / Tanaka, Chika / Matsushita, Daisuke / Numata, Toshinori et al. | 2014
- 1
-
Electrostatics and performance benchmarking using all types of III–V multi-gate FinFETs for sub 7nm technology node logic applicationBaek, R.-H. / Kim, D.-H. / Kim, T.-W. / Shin, CS. / Park, WK. / Michalak, T. / Borst, C. / Song, S. C. / Yeap, Geoffrey / Hill, R. et al. | 2014
- 1
-
Laser thermal anneal of polysilicon channel to boost 3D memory performanceLisoni, J. G. / Arreghini, A. / Congedo, G. / Toledano-Luque, M. / Toque-Tresonne, I. / Huet, K. / Capogreco, E. / Liu, L. / Tan, C.-L. / Degraeve, R. et al. | 2014
- 1
-
Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si FinsMertens, H. / Ritzenthaler, R. / Hikavyy, A. / Franco, J. / Lee, J. W. / Brunco, D. P. / Eneman, G. / Witters, L. / Mitard, J. / Kubicek, S. et al. | 2014
- 1
-
Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyondRagnarsson, L.-A. / Chew, S. A. / Dekkers, H. / Luque, M. Toledano / Parvais, B. / De Keersgieter, A. / Devriendt, K. / Van Ammel, A. / Schram, T. / Yoshida, N. et al. | 2014
- 1
-
III–V CMOS devices and circuits with high-quality atomic-layer-epitaxial La2O3/GaAs interfaceDong, L. / Wang, X.W. / Zhang, J.Y. / Li, X.F. / Lou, X.B. / Conrad, N. / Wu, H. / Gordon, R.G. / Ye, P. D. et al. | 2014
- 1
-
A double-density dual-mode phase change memory using a novel background storage schemeWu, J.Y. / Lee, M.H. / Khwa, W. S. / Lu, H. C. / Li, H. P. / Chen, Y.Y. / BrightSky, M. / Chen, T. S. / Wang, T.Y. / Cheek, R. et al. | 2014
- 1
-
A high-performance low-cost chip-on-Wafer package with sub-μm pitch Cu RDLLiao, W.S. / Chiang, C.C. / Wu, W.M. / Fan, C. H. / Chiu, S.L. / Chiu, C.C. / Chen, T.Y. / Hsieh, C.C. / Chen, H.Y. / Lo, H.Y. et al. | 2014
- 1
-
Design methodology of tri-gate poly-Si MOSFETs with 10nm nanowire channel to enhance short-channel performance and reduce Vth & Id variabilitySaitoh, Masumi / Ota, Kensuke / Tanaka, Chika / Numata, Toshinori et al. | 2014
- 1
-
Germanium-Tin on Silicon avalanche photodiode for short-wave infrared imagingYuan Dong, / Wei Wang, / Xin Xu, / Xiao Gong, / Dian Lei, / Qian Zhou, / Zhe Xu, / Soon-Fatt Yoon, / Gengchiau Liang, / Yee-Chia Yeo, et al. | 2014
- 1
-
III–V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on SiYokoyama, M. / Yokoyama, H. / Takenaka, M. / Takagi, S. et al. | 2014
- 1
-
A high-density logic CMOS process compatible non-volatile memory for sub-28nm technologiesShen, Rick Shih-Jye / Wu, Meng-Yi / Chen, Hsin-Ming / Lu, Chris Chun-Hung et al. | 2014
- 1
-
Embedded STT-MRAM for energy-efficient and cost-effective mobile systemsKang, Seung H. et al. | 2014
- 1
-
Analog, RF, and ESD device challenges and solutions for 14nm FinFET technology and beyondSingh, Jagar / Jerome, Ciavatti / Wei, Andy / Miller, Roderick / Arnaud, Bousquet / Lili, Cheng / Zang, Hui / Kasun, Punchihewa / Manjunatha, Prabhu / Biswanath, Senapati et al. | 2014
- 1
-
Spatial mapping of non-uniform time-to-breakdown and physical evidence of defect clusteringWu, Ernest Y. / Baozhen Li, / Stathis, James H. / Linder, Barry / Shaw, Thomas et al. | 2014
- 1
-
The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devicesHsieh, E. R. / Lu, P. Y. / Chung, Steve S. / Chang, K. Y. / Liu, C. H. / Ke, J. C. / Yang, C. W. / Tsai, C. T. et al. | 2014
- 1
-
Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrateLee, C. H. / Lu, C. / Nishimura, T. / Nagashio, K. / Toriumi, A. et al. | 2014
- 1
-
Advanced RMG module to improve AC/DC performance for 14nm FinFETs and beyondTogo, M. / Joshi, M. / Meer, H. V. / Liu, Y. / Yong, C. / Liu, B. / He, X. / Wu, X. / Mun, S. Y. / Zhang, X. et al. | 2014
- 1
-
In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOSMiyoshi, Hidenori / Ueno, Tetsuji / Akiyama, Koji / Hirota, Yoshihiro / Kaitsuka, Takanobu et al. | 2014
- 1
-
3D CMOS-MEMS stacking with TSV-less and face-to-face direct metal bondingChua, S. L. / Razzaq, A. / Wee, K. H. / Li, K. H. / Yu, H. / Tan, C. S. et al. | 2014
- 1
-
Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT eraKamohara, Shiro / Sugii, Nobuyuki / Yamamoto, Yoshiki / Makiyama, Hideki / Yamashita, Tomohiro / Hasegawa, Takumi / Okanishi, Shinobu / Yanagita, Hiroshi / Kadoshima, Masaru / Maekawa, Keiichi et al. | 2014
- 1
-
High-Q inductors on locally semi-insulated Si substrate by helium-3 bombardment for RF CMOS integrated circuitsNing Li, / Okada, Kenichi / Inoue, Takeshi / Hirano, Takuichi / Qinghong Bu, / Narayanan, Aravind Tharayil / Siriburanon, Teerachot / Sakane, Hitoshi / Matsuzawa, Akira et al. | 2014
- 1
-
Effect of traps on transient bit-line current behavior in word-line stacked nand flash memory with poly-Si bodyKang, Ho-Jung / Jeong, Min-Kyu / Joe, Sung-Min / Seo, Ji-Hyun / Park, Sung-Kye / Jin, Sung Hun / Park, Byung-Gook / Lee, Jong-Ho et al. | 2014
- 1
-
Deep insights into low frequency noise behavior of tunnel FETs with source junction engineeringHuang, Qianqian / Huang, Ru / Chen, Cheng / Wu, Chunlei / Wang, Jiaxin / Wang, Chao / Wang, Yangyuan et al. | 2014
- 1
-
Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping methodShin, Yunsang / Chung, Wonil / Seo, Yujin / Lee, Choong-Ho / Sohn, Dong Kyun / Cho, Byung Jin et al. | 2014
- 1
-
Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabricationKai-Shin Li, / Ho, ChiaHua / Ming-Taou Lee, / Min-Cheng Chen, / Cho-Lun Hsu, / Lu, J. M. / Lin, C. H. / Chen, C. C. / Wu, B. W. / Hou, Y. F. et al. | 2014
- 1
-
Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopantsChen, Y. Y. / Roelofs, R. / Redolfi, A. / Degraeve, R. / Crotti, D. / Fantini, A. / Clima, S. / Govoreanu, B. / Komura, M. / Goux, L. et al. | 2014
- 1
-
Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energiesChen, Jiezhi / Higashi, Yusuke / Kato, Koichi / Mitani, Yuichiro et al. | 2014
- 1
-
The demonstration of D-SMT stressor on Si and Ge n-FinFETsLiao, M.-H. / Chen, P. G. / Huang, S. C. / Kao, S. C. / Hung, C. X. / Liu, K. H. / Lien, C. / Liu, C. Y. et al. | 2014
- 1
-
Advanced 1.1um pixel CMOS image sensor with 3D stacked architectureLiu, J.C. / Yaung, D.N. / Sze, J.J. / Wang, C.C. / Hung, Gene. / Wang, C.J. / Hsu, T.H. / Lin, R.J. / Wang, T.J. / Wang, W.D. et al. | 2014
- 1
-
Fast step-down set algorithm of resistive switching memory with low programming energy and significant reliability improvementMeng, Y. / Xue, X. Y. / Song, Y. L. / Yang, J. G. / Chen, B. A. / Lin, Y. Y. / Zou, Q. T. / Huang, R. / Wu, J. G. et al. | 2014
- 1
-
Record Ion (0.50 mA/µm at VDD = 0.5 V and Ioff = 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETsLee, S. / Chobpattana, V. / Huang, C.-Y. / Thibeault, B. J. / Mitchell, W. / Stemmer, S. / Gossard, A. C. / Rodwell, M. J. W. et al. | 2014
- 1
-
Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientationLiu, Mingshan / Han, Genquan / Liu, Yan / Zhang, Chunfu / Wang, Hongjuan / Li, Xiangdong / Zhang, Jincheng / Cheng, Buwen / Hao, Yue et al. | 2014
- 1
-
Chip Package Interaction with fine pitch Cu pillar bump using mass reflow and thermal compression bonding assembly process for 20nm/16nm and beyondLily Zhao, / Bao, Andy / Yangyang Sun, / Chun-Jen Chen, / Tsai, Scott / Lee, Kenny / Xuefeng Zhang, / Perry, Dan / Kalleberg, Tor / Han, Michael et al. | 2014
- 1
-
High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)Lingming Yang, / Majumdar, Kausik / Du, Yuchen / Liu, Han / Heng Wu, / Hatzistergos, Michael / Hung, P. Y. / Tieckelmann, Robert / Tsai, Wilman / Hobbs, Chris et al. | 2014
- 1
-
Towards high-speed, write-disturb tolerant 3D vertical RRAM arraysChen, Hong-Yu / Bin Gao, / Li, Haitong / Rui Liu, / Peng Huang, / Zhe Chen, / Bing Chen, / Feifei Zhang, / Liang Zhao, / Zizhen Jiang, et al. | 2014
- 1
-
A fast and low-voltage Cu complementary-atom-switch 1Mb array with high-temperature retentionBanno, N. / Tada, M. / Sakamoto, T. / Miyamura, M. / Okamoto, K. / Iguchi, N. / Nohisa, T. / Hada, H. et al. | 2014
- 1
-
Committees| 2014
- 1
-
A novel curved CMOS image sensor integrated with imaging systemItonaga, K. / Arimura, T. / Matsumoto, K. / Kondo, G. / Terahata, K. / Makimoto, S. / Baba, M. / Honda, Y. / Bori, S. / Kai, T. et al. | 2014
- 1
-
Ge CMOS: Breakthroughs of nFETs (Imax=714 mA/mm, gmax=590 mS/mm) by recessed channel and S/DWu, Heng / Si, Mengwei / Dong, Lin / Zhang, Jingyun / Ye, Peide D. et al. | 2014
- 1
-
Towards the integration of both ROM and RAM functions phase change memory cells on a single die for system-on-chip (SOC) applicationsLung, H.L. / BrightSky, M. / Chien, W. C. / Wu, J.Y. / Kim, S. / Kim, W. / Cheng, H.Y. / Zhu, Y. / Wang, T.Y. / Cheek, R. et al. | 2014
- 1
-
Surface-controlled ultrathin (2 nm) Poly-Si channel junctionless FET towards 3D NAND flash memory applicationsPark, Jong Kyung / Kim, Seung-Yoon / Lee, Ki-Hong / Pyi, Seung Ho / Lee, Seok-Hee / Cho, Byung Jin et al. | 2014
- 1
-
Lowest variability SOI FinFETs having multiple Vt by back-biasingMatsukawa, T. / Fukuda, K. / Liu, Y.X. / Endo, K. / Tsukada, J. / Yamauchi, H. / Ishikawa, Y. / O'uchi, S. / Mizubayashi, W. / Migita, S. et al. | 2014
- 1
-
A novel capacitive-coupled floating gate antenna protection design and its application to prevent in-process charging effects for 3D NAND flash memoryLue, Hang-Ting / Ten-Hao Yeh, / Kuo-Ping Chang, / Tzu-Hsuan Hsu, / Yen-Hao Shih, / Chih-Yuan Lu, et al. | 2014
- 1
-
In0.53Ga0.47As quantum-well MOSFET with source/drain regrowth for low power logic applicationsZhou, X. / Alian, A. / Mols, Y. / Rooyackers, R. / Eneman, G. / Lin, D. / Ivanov, T. / Pourghaderi, A. / Collaert, N. / Thean, A. et al. | 2014
- 1
-
Lateral and vertical scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM devicesFantini, A. / Goux, L. / Redolfi, A. / Degraeve, R. / Kar, G. / Chen, Y.Y / Jurczak, M. et al. | 2014