Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process (Englisch)
- Neue Suche nach: Zhang, Yongkui
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In:
IEEE Transactions on Electron Devices
;
68
, 6
;
2604-2610
;
2021
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process
-
Beteiligte:Zhang, Yongkui ( Autor:in ) / Ai, Xuezheng ( Autor:in ) / Yin, Xiaogen ( Autor:in ) / Zhu, Huilong ( Autor:in ) / Yang, H. ( Autor:in ) / Wang, G. L. ( Autor:in ) / Li, J. J. ( Autor:in ) / Du, A. Y. ( Autor:in ) / Li, C. ( Autor:in ) / Huang, W. X. ( Autor:in )
-
Erschienen in:IEEE Transactions on Electron Devices ; 68, 6 ; 2604-2610
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsdatum:01.06.2021
-
Format / Umfang:3693012 byte
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 68, Ausgabe 6
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- 3034
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Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter DevicesDoundoulakis, Georgios / Pavlidis, Dimitris et al. | 2021
- 3040
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A High-Current-Density Electron Beam for Millimeter-Wave AmplifiersCook, Alan M. / Wright, Edward L. / Nguyen, Khanh T. / Joye, Colin D. / Rodgers, John C. / Jaynes, Reginald L. / Atkinson, John / Kimura, Takuji et al. | 2021
- 3045
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Experimental Investigation of a Super Klystron-Like Relativistic Backward Wave Oscillator Operating With Low Magnetic FieldWang, Huida / Xiao, Renzhen / Chen, Changhua / He, Chaoxiong / Shi, Yanchao / Huang, Wenhua / Fan, Ruyu et al. | 2021
- 3051
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Demonstration of a 220-GHz Continuous Wave Traveling Wave TubeJiang, Yi / Lei, Wenqiang / Hu, Peng / Song, Rui / Ma, Guowu / Chen, Hongbin / Jin, Xiao et al. | 2021
- 3056
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Focusing of the Sheet Electron Beam With Two-Plane Periodic Cusped Magnetic System for Terahertz TWTsZhang, Changqing / Feng, Jinjun / Cai, Jun / Pan, Pan / Su, Siming / Gong, Yubin et al. | 2021
- 3063
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Multifaceted Simulations Reproducing Experimental Results From the 1.5-MW 140-GHz Preprototype Gyrotron for W7-XAvramidis, Konstantinos A. / Ioannidis, Zisis C. / Illy, Stefan / Jin, Jianbo / Ruess, Tobias / Aiello, Gaetano / Thumm, Manfred / Jelonnek, John et al. | 2021
- 3070
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Impact of Channel Length on the Operation of Junctionless Transistors With Substrate BiasingJeon, Dae-Young / Mouis, Mireille / Barraud, Sylvain / Ghibaudo, Gerard et al. | 2021
- 3074
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Theoretical Study of Negative Capacitance FinFET With Quasi-Antiferroelectric MaterialZhang, Fan / Peng, Yue / Deng, Xinran / Huo, Jiali / Liu, Yan / Han, Genquan / Wu, Zhenhua / Yin, Huaxiang / Hao, Yue et al. | 2021
- 3080
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Close-Packed PEDOT:PSS-Coated Graphene Microelectrodes for High-Resolution Interrogation of Neural ActivitySun, Feng / Xiong, Zheshun / Park, Jinyoung / Xu, Guangyu et al. | 2021
- 3087
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Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS₂ TransistorsZhao, Xin-Yuan / Liu, Lu / Xu, Jing-Ping et al. | 2021
- 3091
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Mobility Degradation and Series Resistance in Graphene Field-Effect TransistorsJeppson, Kjell / Asad, Muhammad / Stake, Jan et al. | 2021
- 3096
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A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit DesignAhsan, Sheikh Aamir / Singh, Shivendra Kumar / Mir, Mehak Ashraf / Perucchini, Marta / Polyushkin, Dmitry K. / Mueller, Thomas / Fiori, Gianluca / Marin, Enrique G. et al. | 2021
- 3104
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Doping Profile Engineered Triple Heterojunction TFETs With 12-nm Body ThicknessChen, Chin-Yi / Tseng, Hsin-Ying / Ilatikhameneh, Hesameddin / Ameen, Tarek A. / Klimeck, Gerhard / Rodwell, Mark J. / Povolotskyi, Michael et al. | 2021
- 3112
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Threshold Switching Enabled Sub-pW-Leakage, Hysteresis-Free CircuitsCheng, Bojun / Emboras, Alexandros / Passerini, Elias / Lewerenz, Mila / Koch, Ueli / Wu, Lianbo / Liao, Jiawei / Ducry, Fabian / Aeschlimann, Jan / Jang, Taekwang et al. | 2021
- 3119
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Flexible Dual-Gate MoS₂ Neuromorphic Transistors on Freestanding Proton-Conducting Chitosan MembranesChen, Chunsheng / He, Yongli / Zhu, Li / Zhu, Ying / Shi, Yi / Wan, Qing et al. | 2021
- 3124
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Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit PropertiesSung, Wen-Li / Li, Yiming et al. | 2021
- 3129
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Solid-State Image Sensors| 2021
- 3130
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IEEE Transactions on Semiconductor Manufacturing CALL FOR PAPERS for Special Issue on Process-Level Machine Learning Applications in Semiconductor Manufacturing| 2021
- 3131
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Spintronics-Devices and Circuits| 2021
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Table of contents| 2021
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IEEE Transactions on Electron Devices publication information| 2021
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IEEE Transactions on Electron Devices information for authors| 2021