Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs (Englisch)
- Neue Suche nach: Feil, Maximilian W.
- Neue Suche nach: Waschneck, Katja
- Neue Suche nach: Reisinger, Hans
- Neue Suche nach: Berens, Judith
- Neue Suche nach: Aichinger, Thomas
- Neue Suche nach: Prigann, Sven
- Neue Suche nach: Pobegen, Gregor
- Neue Suche nach: Salmen, Paul
- Neue Suche nach: Rescher, Gerald
- Neue Suche nach: Gustin, Wolfgang
- Neue Suche nach: Grasser, Tibor
- Neue Suche nach: Feil, Maximilian W.
- Neue Suche nach: Waschneck, Katja
- Neue Suche nach: Reisinger, Hans
- Neue Suche nach: Berens, Judith
- Neue Suche nach: Aichinger, Thomas
- Neue Suche nach: Prigann, Sven
- Neue Suche nach: Pobegen, Gregor
- Neue Suche nach: Salmen, Paul
- Neue Suche nach: Rescher, Gerald
- Neue Suche nach: Gustin, Wolfgang
- Neue Suche nach: Grasser, Tibor
In:
2023 IEEE International Integrated Reliability Workshop (IIRW)
;
1-9
;
2023
-
ISBN:
-
ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
-
Titel:Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs
-
Beteiligte:Feil, Maximilian W. ( Autor:in ) / Waschneck, Katja ( Autor:in ) / Reisinger, Hans ( Autor:in ) / Berens, Judith ( Autor:in ) / Aichinger, Thomas ( Autor:in ) / Prigann, Sven ( Autor:in ) / Pobegen, Gregor ( Autor:in ) / Salmen, Paul ( Autor:in ) / Rescher, Gerald ( Autor:in ) / Gustin, Wolfgang ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsdatum:08.10.2023
-
Format / Umfang:1243850 byte
-
ISBN:
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Investigating Device Degradation and Revival in Resistive Random Access MemoryLiehr, Maximilian / Ravindra, Pramod / Beckmann, Karsten / Cady, Nathaniel et al. | 2023
- 1
-
On the Role of NBTI and PBTI Induced Mobility Degradation for Compact Modeling in Metal-Gate/High-k FETsBogner, Christian / Reisinger, Hans / Lahbib, Insaf / Martin, Andreas / Gustin, Wolfgang / Grasser, Tibor / Schlunder, Christian et al. | 2023
- 1
-
Evaluation of Temperature-Humidity-Reverse Bias Robustness of 3rd Generation 650V Class 4H-SiC Discrete Power MOSFET DevicesWaseem, Muhammad / Ibrahim, Mesfin Seid / Abbas, Waseem / Lu, Chang / Yuluo, Hou / Lee, Hiu Hung / Hao, Zhang / Loo, Ka-Hong et al. | 2023
- 1
-
Analysis of Effects of Aging on the Accuracy of Analog Computing-In-Memory ComputationZhang, Shida / Wang, Wei-Chun / Sharma, Sudarshan / Mukhopadhyay, Saibal et al. | 2023
- 1
-
Integrated Process-Mechanical Stress Analysis of 2.5D/3D ICs with Two Types of Interconnections in Advanced PackagingRen, Bo / Wu, C. T. / Hu, Wei / Pan, Xiaofei / Lyu, Dandan / Chang, Norman et al. | 2023
- 1
-
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime EstimationVecchi, Sara / Padovani, Andrea / Pavan, Paolo / Puglisi, Francesco Maria et al. | 2023
- 1
-
Convolution neural network inference using frequency modulation in computational phase-change memoryTrabelsi, A. / Cagli, C. / Hirtzlin, T. / Martin, S. / Billoint, O. / Vianello, E. / Sousa, V. / Bourgeois, G. / Andrieu, F. et al. | 2023
- 1
-
Advanced Extraction of Trap Parameters from Single-Defect MeasurementsWaltl, Michael / Stampfer, Bernhard / Grasser, Tibor et al. | 2023
- 1
-
Analyzing the Conduction Mechanism and TDDB Reliability of Antiferroelectric-like MIM CapacitorsViegas, Alison E. / Everding, Maximilian / Falidas, Konstantinos E. / Lederer, Maximilian / Czernohrosky, Malte / Heitmann, Johannes et al. | 2023
- 1
-
Hot-carrier-degradation measured with charge-pumping in trench devices despite deep contactsSusnik, Sabina / Pobegen, Gregor / Grasser, Tibor et al. | 2023
- 1
-
Prevention of Al Interconnect Corrosion during Temperature-Humidity-Bias (THB) StressKeyes, Michael / Perry, Mark / O'Keeffe, Daniel / Watanabe, Yuichi / Yamane, Akira / Tanaka, Naoaki / Gambino, Jeff et al. | 2023
- 1
-
Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-ComputingRaffel, Yannick / Olivo, Ricardo / Lederer, Maximilian / Pirro, Luca / Parmar, Vivek / Chohan, Talha / Lehninger, David / De, Sourav / Kampfe, Thomas / Seidel, Konrad et al. | 2023
- 1
-
Restrictive antenna rules limiting PID degradation for MOS transistors with connected MIM-capacitorsMartin, Andreas / Pham, Phi-Long / Nielen, Heiko / Feil, Maximilian W. et al. | 2023
- 1
-
Analytical Model of SRAM VMin to Predict Reliability and Process ImpactKumar, Tanuj / Cacho, Florian / Roy, Tanmoy / De La Bardonnie, Marc / Pelle, Servan / Giner, Fabien et al. | 2023
- 1
-
Exploring the NBTI Aging and PVT effects on RRAM-based FPGA Multiplexers PerformanceRizzi, Tommaso / Baroni, Andrea / Bertozzi, Davide / Wenger, Christian / Ielmini, Daniele / Zambelli, Cristian et al. | 2023
- 1
-
Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulationsErcolano, F. / Balestra, L. / Krause, S. / Leone, S. / Streicher, I. / Waltereit, P. / Dammann, M. / Reggiani, S. et al. | 2023
- 1
-
The Impact of Operation Conditions on Potentiation, Depression and Endurance Dynamics of Tantalum Oxide RRAMsMoazzeni, Alireza / Tawsif Rahman Chowdhury, Md / Tutuncuoglu, Gozde et al. | 2023
- 1
-
Electromigration Reliability of Buried Power Rails in Vertically Stacked DevicesFilipovic, Lado / de Orio, Roberto Lacerda et al. | 2023
- 1
-
Reliability Analysis of Random Telegraph Noisebased True Random Number GeneratorsZanotti, Tommaso / Ranjan, Alok / O'Shea, Sean J. / Raghavan, Nagarajan / Thamankar, Ramesh / Pey, Kin Leong / Maria Puglisi, Francesco et al. | 2023
- 1
-
On-Chip Monitoring of Time-Dependent Dielectric Breakdown (TDDB) using a Novel Leakage Current Sensor with Digital OutputDarko, Emmanuel Nti / Bhatheja, Kushagra / Adjei, Daniel / Strong, Matthew / Chen, Degang et al. | 2023
- 1
-
A DLTS study on Deep Trench Processing induced Trap States in Silicon PhotodiodesStampfer, Paul / Stampfer, Bernhard / Roger, Frederic / Minixhofer, Rainer / Grasser, Tibor / Waltl, Michael et al. | 2023
- 1
-
Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETsFeil, Maximilian W. / Waschneck, Katja / Reisinger, Hans / Berens, Judith / Aichinger, Thomas / Prigann, Sven / Pobegen, Gregor / Salmen, Paul / Rescher, Gerald / Gustin, Wolfgang et al. | 2023
- 1
-
Modulation Of HCI in I/O analog devices Through Process SpecificationsDiouf, C. / Federspiel, X. / Bravaix, A. / Doyen, C. / Yon, V. / Basset, L. / Garros, X. et al. | 2023
- 1
-
Current Driven Modeling and SILC Investigation of Oxide Breakdown under Off-state TDDB in 28nm dedicated to RF applicationsGarba-Seybou, Tidjani / Bravaix, Alain / Federspiel, Xavier / Hai, Joycelyn / Diouf, Cheikh / Cacho, Florian et al. | 2023
- 1
-
A Device to Circuit Framework for NBTIChatterjee, Payel / Thakor, Karansingh / Bisht, Arnav Shaurya / Ansari, Aseer / Samaga, Suraj / Mahapatra, Souvik et al. | 2023
- 1
-
Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO2/HfO2 TransistorsMoxim, S. J. / Ashton, J. P. / Anders, M. A. / Lawson, N. W. / Ryan, J. T. et al. | 2023
- 1
-
TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET DevicesNeuendank, Jereme / Al Mamun, Fahad / Barnaby, Hugh / Bonaldo, Stefano / Spear, Matthew / Wallace, Trace / Loveless, Daniel / Pew, Jacob / Nour, Mohamed / Manos, Pete et al. | 2023
- 1
-
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTsZagni, Nicolo / Chini, Alessandro / Verzellesi, Giovanni / Cioni, Marcello / Giorgino, Giovanni / Nicotra, Maria Concetta / Eloisa Castagna, Maria / Iucolano, Ferdinando et al. | 2023
- 1
-
RESET Kinetics of 28 nm Integrated ReRAMWiefels, Stefan / Kopperberg, Nils / Hofmann, Karl / Otterstedt, Jan / Wouters, Dirk / Waser, Rainer / Menzel, Stephan et al. | 2023
- 1
-
Advanced Method for Predicting Lifetime of NAND Memory Data Retention Using Long term (1 Year) CharacterizationLee, Ji Seok / Kim, Namyong / Kim, Shinhyung / Park, Il Han / Song, Hwangju / Lee, Kul / Cho, Young-Hoon / Hwang, Sangwon / Ko, Seungbum / Pae, Sangwoo et al. | 2023
- 1
-
Pulsed Power Electromigration in Copper Metallization (10 Hz – 4 MHz)Mattoo, Mueen / Lloyd, J. R. et al. | 2023
- 1
-
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperaturesLa Torraca, Paolo / Padovani, Andrea / Wernersson, Lars-Erik / Cherkaoui, Karim / Hurley, Paul / Larcher, Luca et al. | 2023
- 1
-
Low-Frequency Noise Sources and Back-Gate Coupling Effects in FDX-SOI DeviceYadav, Nandakishor / Raffel, Yannick / Olivo, Ricardo Revello / Pirro, Luca / Kampfe, Thomas / Seidel, Konrad et al. | 2023
- 1
-
On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability StudiesAllridge, Elijah A. / Lenahan, Patrick M. et al. | 2023
- 1
-
Investigation of X-ray Irradiation Impact on CeRAMGruszecki, A. A. / Fernandez-Izquierdo, L. / Suryavanshi, S. V. / Yeric, G. / Quevedo-Lopez, M. / Young, C. D. et al. | 2023
- 1
-
IIRW 2023 Abstract Page| 2023
- 1
-
Plasma Induced Damage Test Methodology applied to a 3D Vertical NAND Memory TechnologyBeckmeier, Daniel / LaRow, Charles / Kerber, Andreas et al. | 2023
- 1
-
Ruthenium Metallization and Via Prefill for Electromigration Reliability Enhancement in Advanced Sub-3 nm Node InterconnectsEsposto, Simone / Sisto, Giuliano / Ciofi, Ivan / Milojevic, Dragomir / Croes, Kristof / Zahedmanesh, Houman et al. | 2023
- i
-
IIRW 2023 Committees| 2023
- i
-
IIRW 2023 Future Events Page| 2023
- i
-
IIRW 2023 Program Schedule| 2023
- i
-
IIRW 2023 Photos| 2023
- i
-
IIRW 2023 Invited| 2023
- i
-
IIRW 2023 Foreword| 2023
- i
-
IIRW 2023 Keynote Speaker| 2023
- i
-
IIRW 2023 Tutorial| 2023