3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel (Englisch)
- Neue Suche nach: Mota-Frutuoso, T.
- Neue Suche nach: Lapras, V.
- Neue Suche nach: Brunet, L.
- Neue Suche nach: Basset, L.
- Neue Suche nach: Lugo, J.
- Neue Suche nach: Fenouillet-Beranger, C.
- Neue Suche nach: Vinet, M.
- Neue Suche nach: Lattard, D.
- Neue Suche nach: Boulard, F.
- Neue Suche nach: Exbraya, Y.
- Neue Suche nach: Boutry, D.
- Neue Suche nach: Billoint, O.
- Neue Suche nach: Bosch, D.
- Neue Suche nach: Maneglia, Y.
- Neue Suche nach: Peizerat, A.
- Neue Suche nach: Dumas, S.
- Neue Suche nach: Sicard, G.
- Neue Suche nach: Kerdiles, S.
- Neue Suche nach: Kanyandekwe, J.
- Neue Suche nach: Sideris, P.
- Neue Suche nach: Mazzocchi, V.
- Neue Suche nach: Sarrazin, A.
- Neue Suche nach: Loup, V.
- Neue Suche nach: Mauguen, G.
- Neue Suche nach: Morales, C.
- Neue Suche nach: Alba, P. Acosta
- Neue Suche nach: Balan, V.
- Neue Suche nach: Perrot, C.
- Neue Suche nach: Sturm, J.
- Neue Suche nach: Euvrard, C.
- Neue Suche nach: Aussenac, F.
- Neue Suche nach: Janaud, A.
- Neue Suche nach: Chapon, J-D.
- Neue Suche nach: Guillermet, M.
- Neue Suche nach: Guglieri, S.
- Neue Suche nach: Bailly, F.
- Neue Suche nach: Toresani, P.
- Neue Suche nach: Fournel, F.
- Neue Suche nach: Mouhdach, M.
- Neue Suche nach: Berthoud, A.
- Neue Suche nach: Chapelon, L-L.
- Neue Suche nach: Ribotta, M.
- Neue Suche nach: Ponthenier, F.
- Neue Suche nach: Magalhaes, A.
- Neue Suche nach: Maitrejean, S.
- Neue Suche nach: Moulin, C.
- Neue Suche nach: Michailos, J.
- Neue Suche nach: Arnaud, F.
- Neue Suche nach: Cathelin, A.
- Neue Suche nach: Arcamone, J.
- Neue Suche nach: Andrieu, F.
- Neue Suche nach: Garros, X.
- Neue Suche nach: Gaillard, F.
- Neue Suche nach: Batude., P.
- Neue Suche nach: Mota-Frutuoso, T.
- Neue Suche nach: Lapras, V.
- Neue Suche nach: Brunet, L.
- Neue Suche nach: Basset, L.
- Neue Suche nach: Lugo, J.
- Neue Suche nach: Fenouillet-Beranger, C.
- Neue Suche nach: Vinet, M.
- Neue Suche nach: Lattard, D.
- Neue Suche nach: Boulard, F.
- Neue Suche nach: Exbraya, Y.
- Neue Suche nach: Boutry, D.
- Neue Suche nach: Billoint, O.
- Neue Suche nach: Bosch, D.
- Neue Suche nach: Maneglia, Y.
- Neue Suche nach: Peizerat, A.
- Neue Suche nach: Dumas, S.
- Neue Suche nach: Sicard, G.
- Neue Suche nach: Kerdiles, S.
- Neue Suche nach: Kanyandekwe, J.
- Neue Suche nach: Sideris, P.
- Neue Suche nach: Mazzocchi, V.
- Neue Suche nach: Sarrazin, A.
- Neue Suche nach: Loup, V.
- Neue Suche nach: Mauguen, G.
- Neue Suche nach: Morales, C.
- Neue Suche nach: Alba, P. Acosta
- Neue Suche nach: Balan, V.
- Neue Suche nach: Perrot, C.
- Neue Suche nach: Sturm, J.
- Neue Suche nach: Euvrard, C.
- Neue Suche nach: Aussenac, F.
- Neue Suche nach: Janaud, A.
- Neue Suche nach: Chapon, J-D.
- Neue Suche nach: Guillermet, M.
- Neue Suche nach: Guglieri, S.
- Neue Suche nach: Bailly, F.
- Neue Suche nach: Toresani, P.
- Neue Suche nach: Fournel, F.
- Neue Suche nach: Mouhdach, M.
- Neue Suche nach: Berthoud, A.
- Neue Suche nach: Chapelon, L-L.
- Neue Suche nach: Ribotta, M.
- Neue Suche nach: Ponthenier, F.
- Neue Suche nach: Magalhaes, A.
- Neue Suche nach: Maitrejean, S.
- Neue Suche nach: Moulin, C.
- Neue Suche nach: Michailos, J.
- Neue Suche nach: Arnaud, F.
- Neue Suche nach: Cathelin, A.
- Neue Suche nach: Arcamone, J.
- Neue Suche nach: Andrieu, F.
- Neue Suche nach: Garros, X.
- Neue Suche nach: Gaillard, F.
- Neue Suche nach: Batude., P.
In:
2023 International Electron Devices Meeting (IEDM)
;
1-4
;
2023
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel
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Beteiligte:Mota-Frutuoso, T. ( Autor:in ) / Lapras, V. ( Autor:in ) / Brunet, L. ( Autor:in ) / Basset, L. ( Autor:in ) / Lugo, J. ( Autor:in ) / Fenouillet-Beranger, C. ( Autor:in ) / Vinet, M. ( Autor:in ) / Lattard, D. ( Autor:in ) / Boulard, F. ( Autor:in ) / Exbraya, Y. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:09.12.2023
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Format / Umfang:1169628 byte
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
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- 1
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- 1
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650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced CrosstalkYang, Junjie / Wei, Jin / Wang, Maojun / Nuo, Muqin / Yang, Han / Li, Teng / Yu, Jingjing / Yang, Xuelin / Hao, Yilong / Wang, Jinyan et al. | 2023
- 1
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First BEOL-compatible, 10 ns-fast, and Durable 55 nm Top-pSOT-MRAM with High TMR (>130%)Li, Kai-Shin / Shieh, Jia-Min / Chen, Yi-Ju / Hsu, Cho-Lun / Shen, Chang-Hong / Hou, Tuo-Hung / Lin, Chia-Ping / Lai, Chih-Huang / Tang, Denny D. / Yuan-Chen Sun, Jack et al. | 2023
- 1
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Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applicationsDas, Dipjyoti / Park, Hyeonwoo / Wang, Zekai / Zhang, Chengyang / Ravindran, Prasanna Venkatesan / Park, Chinsung / Afroze, Nashrah / Hsu, Po-Kai / Tian, Mengkun / Chen, Hang et al. | 2023
- 1
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Fundamental Issues in VNAND Integration Toward More Than 1K LayersHan, Jeehoon / Kang, Seogoo / Kim, Kyungdong / Jang, Jaehoon / Song, Jaihyuk et al. | 2023
- 1
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Advances in Organic PhotodetectorsDindault, Chloe / Kielar, Marcin / Roche, Gilles H. / Chambon, Sylvain / Leyney, Martial / Wantz, Guillaume / Hirsch, Lionel et al. | 2023
- 1
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Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power CircuitsKawarada, H. / Ota, K. / Fu, Y. / Narita, A. / Zhu, X. / Hiraiwa, A. / Fujishima, T. et al. | 2023
- 1
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First Demonstration of True 4-bit Memory with Record High Multibit Retention >103s and Read Window >105 by Hydrogen Self-Adaptive-Doping for IGZO DRAM ArraysYan, Gangping / Luo, Yanna / Wang, Jianjian / Song, Zhiyu / Niu, Chuqiao / Yang, Shangbo / Tian, Guoliang / Yao, Jiaxin / Ma, Xueli / Zhang, Qingzhu et al. | 2023
- 1
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Intelligent Vision Sensor and Edge Computing Envisage the FutureEki, Ryoji / Kawasaki, Ryohei / Yanagisawa, Eita et al. | 2023
- 1
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Dual QSPI 8Gb STT-MRAM For Space ApplicationsWang, Z. / Wei, Z. / Wu, G. / Hu, L. / Wu, M. / Chandrasekhar, U. / Tran, T. / Baraji, M. / Li, J. / Abedifard, E. et al. | 2023
- 1
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Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-offZhang, J. / Zhang, Z. / Dou, H. / Lin, Z. / Xu, K. / Yang, W. / Zhang, X. / Wang, H. / Ye, P. D. et al. | 2023
- 1
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Demonstration of Millimeter-Wave GaN IMPATT Oscillator at Ka-bandBian, Z. / Marshall, A. / Pao, C. / Lee, T. / Chowdhury, S. et al. | 2023
- 1
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Deep Generative Model for Device Variation ModelingDavoody, Amirhossein / Roy, Ananda S. / Mudanai, Sivakumar P. et al. | 2023
- 1
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Physical Reservoir Computing using HZO-based FeFETs for Edge-AI ApplicationsTakagi, S. / Toprasertpong, K. / Nako, E. / Suzuki, R. / Min, S.-Y. / Takenaka, M. / Nakane, R. et al. | 2023
- 1
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Fully CMOS-Compatible Room-Temperature Waveguide-Integrated Bolometer Based on Germanium-on-Insulator Platform at Mid-Infrared Operating Beyond 4 μmShim, Joonsup / Lim, Jinha / Kim, Inki / Kim, Seong Kwang / Ahn, Seung-Yeop / Park, Juhyuk / Jeong, Jaeyong / Kim, Bong Ho / Lee, Seunghyeon / An, Jihwan et al. | 2023
- 1
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Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETsOka, H. / Asai, H. / Inaba, T. / Shitakata, S. / Yui, H. / Fuketa, H. / Iizuka, S. / Kato, K. / Nakayama, T. / Mori, T. et al. | 2023
- 1
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High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS TechnologiesLee, Tsung-En / Chiang, Hung-Li / Chang, Chih-Yu / Su, Yuan-Chun / Chang, Shu-Jui / Wu, Jui-Jen / Lin, Bo-Jiun / Wang, Jer-Fu / Haw, Shu-Chih / Chiu, Shang-Jui et al. | 2023
- 1
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Process Innovations for Future Technology Nodes with Back-Side Power Delivery and 3D Device StackingKobrinsky, M. / Silva, J. D / Mannebach, E. / Mills, S. / El Qader, M. Abd / Adebayo, O. / Radhakrishna, N. Arkali / Beasley, M. / Chawla, J. / Chugh, S. et al. | 2023
- 1
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Organic Active-Matrix Imager with Ultra-low Illumination Detection Capacity for Lens-Free Optical AnalysisShan, Tong / Li, Jun / Zhou, Chao / Chang, Fangyuan / Guo, Xiaojun et al. | 2023
- 1
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Reversing a decades-long scaling law of dielectric breakdown for ReRAM forming voltage reduction - Modeling competition among defect generation and annihilation processes (invited)Wu, Ernest / Ando, Takashi / Jamison, Paul et al. | 2023
- 1
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6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contactsMorvan, E. / Gobil, Y. / Morisot, F. / Biscarat, J. / Charles, M. / Lugo, J. / Divay, A. / Medbouhi, M. / Charlet, I. / Delprato, J. et al. | 2023
- 1
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The case for hybrid analog neuromorphic chips based on silicon and 2D materialsIannaccone, G. / Rizzo, T. / Paliy, M. / Sfrangio, S. et al. | 2023
- 1
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CMOS image sensor with nano light pillars for optical performance enhancementWang, Chun-Yuan / Huang, Guang-Yu / Yu, Chung-Hsuan / Liu, Hao-Wei / Lu, Yu-Shen / Tsai, Wei-Lung / Kuo, An-Li / Kuo, Shin-Hong / Chen, Han-Son / Chen, Huang-Jen et al. | 2023
- 1
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A Target-Read Retry Scheme for 3D Charge Trap NAND Flash MemoryChou, Y. L. / Lu, C. C. / Tsai, W. J. / Lu, T. C. / Chen, K.C. / Lu, C. Y. et al. | 2023
- 1
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3-STAR: A Super-steep switching, Stackable, and Strongly Reliable Transistor Array RAM for Sub-10nm DRAM and beyondLee, Kynghwan / Yoo, Sungwon / Hong, Jaeho / Kim, Hyun-Cheol / Kim, YongSeok / Kim, Ilgweon / Ha, Daewon / Shin, Yu-Gyun / Song, Jaihyuk et al. | 2023
- 1
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A Holistic Methodology Toward Large-scale AI Implementation using Realistic ReRAM based ACiM from Cell to ArchitecturePark, S. / Kim, J. / Koo, W. / Kwon, Y. / Suh, D. / Lee, S. / Kim, K. / Han, E. / Lee, J. / Lim, Y. et al. | 2023
- 1
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Wafer-level-integrated vertical-waveguide sub-diffraction-limited color splittersKang, S. / Benelajla, M. / Ciamain, R. Mac / Ali, F. / Papadopoulou, A. / Shramkova, O. / Witters, L. / De Vos, J. / Malinowski, P.E. / Heremans, P. et al. | 2023
- 1
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Heterogeneous Power Delivery for Large Chiplet-based Systems using Integrated GaN/Si-Interconnect Fabric with sub-10 μm Bond PitchRen, Haoxiang / Sahoo, Krutikesh / Guo, Ziyi / Pugazhendhi, Rishi / Wong, Zachary / Xiang, Tianyu / Fisher, Timothy S. / Iyer, Subramanian S. et al. | 2023
- 1
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COPS: An Efficient and Reliability-Enhanced Programming Scheme for Analog RRAM and On-Chip Implementation of Denoising Diffusion Probabilistic ModelJiang, Zhixing / Xi, Yue / Tang, Jianshi / Lu, Yuyao / Yu, Ruihua / Hu, Ruofei / Hu, Qi / Gao, Bin / Qian, He / Wu, Huaqiang et al. | 2023
- 1
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Scalable biosensors using standard CMOS processNoyan, Utku / Lu, Sheung / Christen, Jennifer Blain / Abshire, Pamela / Shah, Sahil et al. | 2023
- 1
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2.16µm Back Side Illuminated Voltage Domain Global Shutter CMOS Image Sensor with single silicon layer pixelMalinge, P. / Lalanne, F. / Herault, D. / Ferrotti, T. / Simony, L. / Bigault, S. / Favreau, J. / Nassiet, T. / Sacchettini, Y. / Augier, C. et al. | 2023
- 1
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First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual ChannelsTu, Chien-Te / Hsieh, Wan-Hsuan / Chen, Yu-Rui / Huang, Bo-Wei / Liao, Yu-Tsung / Chen, Wei-Jen / Liu, Yi-Chun / Cheng, Chun-Yi / Chou, Hung-Chun / Lu, Hao-Yi et al. | 2023
- 1
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Modeling the Performance and Reliability of Two-Dimensional Semiconductor TransistorsKnobloch, T. / Waldhoer, D. / Davoudi, M. R. / Karl, A. / Khakbaz, P. / Matzinger, M. / Zhang, Y. / Smithe, K. K. H. / Nazir, A. / Liu, C. et al. | 2023
- 1
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A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Thickness (sub-8nm), Low Thermal Budget (350oC), 100% Initial Chip Yield, Low Power Consumption (0.7 pJ/bit at 2V write voltage), and Prominent Endurance (>1012)Jiang, Pengfei / Jiang, Haijun / Yang, Yang / Tai, Lu / Wei, Wei / Gong, Tiancheng / Wang, Yuan / Xu, Pan / Lv, Shuxian / Wang, Boping et al. | 2023
- 1
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Sustainable Environmental Technologies for Advanced Semiconductor Manufacturing Intelligent FABLee, Hyun Chul / Oh, Sehyeong / Yang, Dong Sik / Koo, Min Seok / Ham, Dong Jin / Jeong, Joonseon / Kang, Sungwoo / Chang, Jaehee / Heo, Hyeon-Su / Kim, Mijong et al. | 2023
- 1
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On-chip zero-field spin wave frequency multiplier and its application on qubit quantum controlLiu, Jiacheng / Wu, Jiahao / Ren, Zheyu / Yang, Sen / Shao, Qiming et al. | 2023
- 1
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A highly reliable 1.8 V 1 Mb Hf0.5Zr0.5O2-based 1T1C FeRAM Array with 3-D CapacitorsOkuno, Jun / Kunihiro, Takafumi / Yonai, Tsubasa / Ono, Ryo / Shuto, Yusuke / Alcala, Ruben / Lederer, Maximilian / Seidel, Konrad / Mikolajick, Thomas / Schroeder, Uwe et al. | 2023
- 1
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The First CMOS-Integrated Voltage-Controlled MRAM with 0.7ns Switching TimeSuhail, H. / He, H. / Yang, J. / Shu, Q. / Wang, C. -Y. / Yang, S. -Y. / Hsin, Y. -C. / Shih, C. -Y. / Lee, H. -H. / Wu, D. et al. | 2023
- 1
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3D Stacked Devices and MOL Innovations for Post-Nanosheet CMOS ScalingHoriguchi, N. / Mertens, H. / Chiarella, T. / Demuynck, S. / Vega-Gonzalez, V. / Vandooren, A. / Veloso, A. / Bardon, M. Garcia / Sisto, G. / Gupta, A. et al. | 2023
- 1
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High Performance mm Wave AlN/GaN MISHEMTs on 200 mm Si SubstrateYadav, S. / Alian, A. / ElKashlan, R. / O'Sullivan, B. J. / Khaled, A. / Kazemi, B. / Peralagu, U. / Banerjee, S. / Parvais, B. / Collaert, N. et al. | 2023
- 1
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Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to4K for ultra-low power LNAsJeong, Jaeyong / Kim, Jongmin / Lee, Jisung / Suh, Yoon-Je / Rheem, Nahyun / Kim, Seong Kwang / Park, Juhyuk / Kim, Bong Ho / Kim, Joon Pyo / Park, Seung-Young et al. | 2023
- 1
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6500-V E-mode Active-Passivation p-GaN Gate HEMT with Ultralow Dynamic RONCui, Jiawei / Wei, Jin / Wang, Maojun / Wu, Yanlin / Yang, Junjie / Li, Teng / Yu, Jingjing / Yang, Han / Yang, Xuelin / Wang, Jinyan et al. | 2023
- 1
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1200V E-mode GaN Monolithic Integration Platform on Sapphire with Ultra-thin Buffer TechnologyLi, Sheng / Ma, Yanfeng / Lu, Weihao / Li, Mingfei / Wang, Lixi / Zhang, Zikang / Zhu, Tinggang / Li, Yiheng / Wei, Jiaxing / Zhang, Long et al. | 2023
- 1
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The Era of Generative Artificial Intelligence: In-Memory Computing PerspectiveKang, Shin-Haeng / Lee, Sukhan / Sohn, Kyomin et al. | 2023
- 1
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New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOSWang, Zirui / Lu, Haoran / Sun, Zixuan / Shen, Cong / Peng, Baokang / Li, Wen-Feng / Xue, Yongkang / Wang, Da / Ji, Zhigang / Zhang, Lining et al. | 2023
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Optical design of dispersive metasurface nano-prism structure for high sensitivity CMOS image sensorChoi, Chulsoo / Park, Jonghoon / Lee, Yunki / Kim, Bumsuk / Kim, Junghoon / Kim, Sunwook / Kim, Junghyun / Roh, Sookyoung / Ahn, Sungmo / Mun, Sangeun et al. | 2023
- 1
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Variability of Trap-induced Mobility Fluctuations in Nanoscale Bulk and FD-SOI MOSFETsGauthier, O. / Haendler, S. / Rafhay, Q. / Theodorou, C. et al. | 2023
- 1
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Designing networks of resistively-coupled stochastic Magnetic Tunnel Junctions for energy-based optimum searchDanouchi, K. / Soumah, L. / Bouchard, C. / Disdier, F. / Fassatoui, A. / Phan, N.-T. / Ezzadeen, M. / Delaet, B. / Viala, B. / Prenat, G. et al. | 2023
- 1
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First demonstration of 3-dimensional stacked FET with top/bottom source-drain isolation and stacked n/p metal gatePark, Jaehyun / Kim, Wukang / Park, Sungil / Yun, Jinchan / Hwang, Kyuman / Yang, Jinwook / Kim, Dahye / Jeong, Jae Won / Yun, Chuljin / Bae, Jinho et al. | 2023
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Thin Sc0.2Al0.8N Film Based 15 GHz Wideband Filter: Towards mmWave Acoustic FiltersWang, Xinghua / Liu, Chen / Zhang, Ying / Yang, Wenjia / Qian, You / Liu, Peng / Quek, Zhan Jiang / Hong, Yan / Yi, Eugene / Woo, Zhun et al. | 2023
- 1
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Simulation in action: the application of modelling to SPAD architecture designPellegrini, S. / Nicholson, I. / Helleboid, R. / Mamdy, B. / Forcolin, G. / Al-Rawhani, M. / Buj, C. / Marchand, G. / Rae, B. / Golanski, D. et al. | 2023
- 1
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Modeling 300mm Wafer Fab Carbon EmissionsJones, Scotten W. et al. | 2023
- 1
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3D Stackable CNTFET/RRAM 1T1R Array with CNT CMOS Peripheral Circuits as BEOL Buffer Macro for Monolithic 3D Integration with Analog RRAM-based Computing-In-MemoryZhang, Yibei / Li, Yijun / Tang, Jianshi / Gao, Ningfei / Gao, Lei / Xu, Haitao / An, Ran / Qin, Qi / Liu, Zhengwu / Wu, Dong et al. | 2023
- 1
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An SRAM-based reconfigurable analog in-memory computing circuit for solving linear algebra problemsMannocci, P. / Melacarne, E. / Pezzoli, A. / Pedretti, G. / Villa, C. / Sancandi, F. / Spagnolini, U. / Ielmini, D. et al. | 2023
- 1
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Gain Cell Memory on Logic Platform – Device Guidelines for Oxide Semiconductor Transistor Materials DevelopmentLiu, Shuhan / Jana, Koustav / Toprasertpong, Kasidit / Chen, Jian / Liang, Zheng / Jiang, Qi / Wahid, Sumaiya / Qin, Shengjun / Chen, Wei-Chen / Wong, H.-S. Philip et al. | 2023
- 1
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High Performance Nanosheet Technology Optimized for 77 KBao, R. / Qin, L. / Frougier, J. / Suk, S. / Rabie, M. / Bajpai, U. / Chou, A. / Nechay, B. / Mohamed, M. / Pujari, R. et al. | 2023
- 1
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Charge Movement in Back Barrier Induced Time-Dependent On-State Breakdown of GaN HEMTYu, Hao / Fang, J. / Vermeersch, B. / Peralagu, U. / Han, H. / Richard, O. / Alian, A. / de Almeida Braga, N. / Esfeh, B. Kazemi / Banerjee, S. et al. | 2023
- 1
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Beyond Exascale: A Paradigm shift for AI and HPCGomes, W. et al. | 2023
- 1
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Bayesian In-Memory Computing with Resistive MemoriesTurck, C. / Bonnet, D. / Harabi, K.-E. / Dalgaty, T. / Ballet, T. / Hirtzlin, T. / Pontlevy, A. / Renaudineau, A. / Esmanhotto, E. / Bessiere, P. et al. | 2023
- 1
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Emerging Memory RRAM Embedded in 12FFC FinFET Technology for industrial ApplicationsWu, Chun-Yu / Yang, Chang-Feng / Lai, Chih-Wei / Wu, Yu-Tien / Chien, Ta-Chun / Yang, Ming-Han / Yang, Ming-Ta / Kao, Yu-Neng / Cheng, Chih-Lin / Wang, Chia-Yu et al. | 2023
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Highly Manufacturable, Cost-Effective, and Monolithically Stackable 4F2 Single-Gated IGZO Vertical Channel Transistor (VCT) for sub-10nm DRAMHa, Daewon / Lee, Wonsok / Cho, M.H. / Terai, M. / Yoo, S.-W. / Kim, H. / Lee, Y. / Uhm, S. / Ryu, M. / Sung, C. et al. | 2023
- 1
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Live-Cell Imaging with Integrated Capacitive Sensor ArraysRosenstein, J. K. / Yin, Y. / Hu, K. / Epstein, S. / Wanunu, M. / Adler, A. / Larkin, J. W. et al. | 2023
- 1
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Power-Efficient Clustering Using Programmable VT FETs in Neuromorphic ArchitecturesBarve, S. / Haehn, N. / Socolik, C. / Ruen, Aaron / Mayersky, Joshua / Reed, Amber / Leedy, Kevin / Jha, R. et al. | 2023
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2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic RobustnessQin, Yuan / Porter, Matthew / Xiao, Ming / Du, Zhonghao / Zhang, Hongming / Ma, Yunwei / Spencer, Joseph / Wang, Boyan / Song, Qihao / Sasaki, Kohei et al. | 2023
- 1
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Enhancing Se-based Selector-only Memory with Ultra-fast Write Speed (~ 10 ns) and Superior Retention Characteristics (> 10 years at RT) via Material Design and UV Treatment EngineeringLee, Jangseop / Seo, Yoori / Ban, Sanghyun / Kim, Dongmin / Heo, Seongjae / Kang, Daehwan / Hwang, Hyunsang et al. | 2023
- 1
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Memcapacitor Crossbar Array with Charge Trapping Layer for Physical Unclonable Function in NAND Flash ArchitectureSong, Min Suk / Ahn, Suhyeon / Hwang, Hwiho / Kim, Hyungjin et al. | 2023
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A 2.2μm 2-Layer Stacked HDR Voltage Domain Global Shutter CMOS Image Sensor with Dual Conversion Gain and 1.2e- FPNGao, Zhe / Park, Geunsook / Fu, Linda / Chapinal, Genis / Yang, Joseph / Freson, Tom / Qin, Qing / Guo, Jiayu / Zhu, Fan / Ding, Shaomin et al. | 2023
- 1
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Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM Accelerating RRAM-based Computing-In-Memory via Monolithic 3D Integration for Edge AIShi, Mingcheng / Su, Yanbo / Tang, Jianshi / Li, Yijun / Du, Yiwei / An, Ran / Li, Jiaming / Li, Yuankun / Yao, Jian / Hu, Ruofei et al. | 2023
- 1
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New Gas Identification Method Using Gas Sensor-Amplifier Merged Array and In-Memory Computing-Based PreprocessingJung, Gyuweon / Kim, Jaehyeon / Jeong, Yujeong / Park, Jinwoo / Shin, Wonjun / Choi, Woo Young / Lee, Jong-Ho et al. | 2023
- 1
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Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In2O3 TFTs Reaching the Quantum LimitNiu, C. / Lin, Z. / Zhang, Z. / Tan, P. / Si, M. / Shang, Z. / Zhang, Y. / Wang, H. / Ye, P. D. et al. | 2023
- 1
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Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor DevicesLiu, Gan / Kong, Qiwen / Wang, Xiaolin / Tu, Yi-Hsin / Zheng, Zijie / Sun, Chen / Zhang, Dong / Kang, Yuye / Han, Kaizhen / Liang, Gengchiau et al. | 2023
- 1
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Miniaturized Dual-Mode SAW Filters using 6-inch LiNbO3-on-SiC for 5GNR and WiFi 6Zheng, Pengcheng / Zhang, Shibin / Xu, Jin-Xu / Fang, Xiaoli / Chen, Yang / Huang, Kai / Sui, Dongchen / Zhang, Xiuyin / Ou, Xin et al. | 2023
- 1
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Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe HeterostuctureYang, Ling / Jia, Fuchun / Lu, Hao / Hou, Bin / Zhang, Meng / Du, Jiale / Chang, Qingyuan / Deng, Longge / Yu, Qian / Li, Shiming et al. | 2023
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First Demonstration of Stacked 2T0C-DRAM Bit-Cell Constructed by Two-Layers of Vertical Channel-All-Around IGZO FETs Realizing 4F2 Area CostChen, Chuanke / Xiang, Jinjuan / Duan, Xinlv / Lu, Congyan / Niu, Jiebin / Zhang, Kaiping / Liu, Yu / Lu, Nianduan / Jiao, Zhengying / Shen, Yongqing et al. | 2023
- 1
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N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+Memory Ultra-Dense 3D, 3D Thermal ScaffoldingSrimani, T. / Bechdolt, A. / Choi, S. / Gilardi, C. / Kasperovich, A. / Li, S. / Lin, Q. / Malakoutian, M. / McEwen, P. / Radway, R.M. et al. | 2023
- 1
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First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator StructureYu, X.-R. / Hsieh, C.-C. / Chuang, M.-H. / Chiu, M.-Y. / Sun, T.-C. / Geng, W.-Z. / Chang, W.-H. / Shih, Y.-J. / Lu, W.-H. / Chang, W.-C. et al. | 2023
- 1
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Ultimate Layer Stacking Technology for High Density Sequential 3D IntegrationRadu, I. / Nguyen, B-Y. / Chang, C-H. / Neve, C. Roda / Gaudin, G. / Besnard, G. / Batude, P. / Loup, V. / Brunet, L. / Vandooren, A. et al. | 2023
- 1
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ESD Reliability in Advanced NodesPoon, Steven S. / Kao, Ming-Hong / Chang, Wei-Chao / Huang, Teng-Fu et al. | 2023
- 1
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BEOL-compatible 4F2 Single Crystalline Semiconductor Oscillator for Low-power and Large-scale Oscillatory Neural Network HardwareKim, Joon Pyo / Kim, Hyun Wook / Jeong, Jaeyong / Park, Juhyuk / Kim, Seong Kwang / Kim, Jongmin / Woo, Jiyong / Kim, Sanghyeon et al. | 2023
- 1
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A Highly Pitch-Scalable Capacitor-less 3D DRAM Using Cross-bar Selection with Gate-Controlled Thyristor (GCT) Featuring High Endurance and Free Read-DisturbChen, Wei-Chen / Lue, Hang-Ting / Wu, Ming-Hung / Lin, Yu-Tang / Wang, Keh-Chung / Lu, Chih-Yuan et al. | 2023
- 1
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The Challenges and Solutions of Cu/SiCN Wafer-to-Wafer Hybrid Bonding Scaling Down to 400nm PitchChew, Soon-Aik / Zhang, Boyao / Vanstreels, Kris / Chery, Emmanuel / De Messemaeker, Joke / Witters, Liesbeth / Van Sever, Koen / Iacovo, Serena / Dewilde, Sven / Stucchi, Michele et al. | 2023
- 1
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Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal ContactChung, Yun-Yan / Yun, Wei-Sheng / Chou, Bo-Jhih / Hsu, Chen-Feng / Yu, Shao-Ming / Arutchelvan, G. / Li, Ming-Yang / Lee, Tsung-En / Lin, Bo-Jiun / Li, Chen-Yi et al. | 2023
- 1
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Role of Inter-Layer Dielectric on the Electrical and Heat Dissipation Characteristics in the Heterogeneous 3D Sequential CFETs with Ge p-FETs on Si n-FETsKim, Seong Kwang / Lim, Hyeong-Rak / Shim, Joonsup / Baek, Woojin / Kim, Seongho / Park, Youngkeun / Jeong, Jaejoong / Lim, Jinha / Kim, Joon Pyo / Jeong, Jaeyong et al. | 2023
- 1
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NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI WorkloadsRamaswamy, N. / Calderoni, A. / Zahurak, J. / Servalli, G. / Chavan, A. / Chhajed, S. / Balakrishnan, M. / Fischer, M. / Hollander, M. / Ettisserry, D. P. et al. | 2023
- 1
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Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet TechnologyMochizuki, Shogo / Loubet, Nicolas / Mirdha, Pial / Durfee, Curtis / Zhou, Huimei / Tsusui, Gen / Frougier, Julien / Vega, Reinaldo / Qin, Liqiao / Felix, Nelson et al. | 2023
- 1
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Scaling opportunities for Gate-All-Around: A patterning perspectiveSeshadri, I. / Miller, E. / Church, J. / Chu, A. / Zhang, J. / Greene, A. / Frougier, J. / Li, T. / Cabrera, Y. / Kenath, G. et al. | 2023
- 1
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Ultimate MRAM Scaling: Design Exploration of High-Density, High-Performance and Energy-Efficient VGSOT for Last Level CacheGupta, M. / Xiangt, Y. / Garcia-Redondo, F. / Cai, K. / Abdi, D. / Liu, H.-H. / Rao, S. / Hiblot, G. / Couet, S. / Garcia-Bardon, M. et al. | 2023
- 1
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Semiconductor Challenges in the 5G and 6G Technology PlatformsEkelund, Bjorn et al. | 2023
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Complementary Field-Effect Transistor (CFET) Demonstration at 48nm Gate Pitch for Future Logic Technology ScalingLiao, S. / Yang, L. / Chiu, T.K. / You, W.X. / Wu, T.Y. / Yang, K.F. / Woon, W.Y. / Ho, W.D. / Lin, Z.C. / Hung, H.Y. et al. | 2023
- 1
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Photonic BiCMOS Technology with 80 GHz Ge Photo Detectors and 100 GHz Ge Electro-Absorption ModulatorsSteckler, D. / Lischke, S. / Peczek, A. / Kroh, A. / Zimmermann, L. et al. | 2023
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Innovations For Energy Efficient Generative AINaffziger, S. et al. | 2023
- 1
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A silicon photonic 8λ, x 32Gbps/λ, WDM transceiver with integrated laser array and SOA for optical I/OHuang, D. / Xuan, Z. / Kumar, R. / Levy, C. / Su, G. / Ma, C. / Wu, X. / Liu, S. / Sharma, J. / Kim, J. et al. | 2023
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Thermal dissipation in stacked devicesWoon, W. Y. / Vaziri, Sam / Shih, C. C. / Datye, I. / Malakoutian, M. / Hsu, James / Yang, K. F. / Huang, J. R. / Shen, T. M. / Chowdhury, S. et al. | 2023
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Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric DopingSafion, Nathaniel / Chiu, Hsin-Yuan / Chao, Tzu-Ang / Su, Sheng-Kai / Passlack, Matthias / Chiu, Kuang-Hsiang / Chen, Chien-Wei / Kei, Chi-Chung / Chou, Chen-Han / Lee, Tsung-En et al. | 2023
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In-Situ Encrypted NAND FeFET Array for Secure Storage and Compute-in-MemoryZhao, Zijian / Xu, Yixin / Read, James / Hsu, Po-Kai / Qin, Yixin / Huang, Tzu-Jung / Lim, Suhwan / Kim, Kijoon / Kim, Kwangsoo / Kim, Wanki et al. | 2023
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ReRAM-Based NeoHebbian Synapses for Faster Training-Time-to-Accuracy Neuromorphic HardwareBhattacharya, T. / Bezugam, S.S. / Pande, S. / Wlazlak, E. / Strukov, D. et al. | 2023
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Developing Sustainable Technologies for a more Sustainable FutureNicoleau, S. / Champseix, J-L. / Tagarian, D. / Boeuf, F. / Quinio, P. et al. | 2023
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1-Phototransistor-1-Threshold Switching Optoelectronic Neuron for In-Sensor Compression via Spiking Neuron NetworkWang, Rui / Li, Fanfan / Li, Dingwei / Wang, Chuanqing / Tang, Yingjie / Liu, Guolei / Wang, Saisai / Xie, Yong / Sawan, Mohamad / Ma, Xiaohua et al. | 2023
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Field programmable digital microfluidics chip for high-throughput droplet array manipulationYu, Jun / Jiang, Shengzhe / Wang, Dongping / Chang, Chunyu / Jia, Zhiqiang / Du, Maohua / Shi, Subao / Li, Jiahao / Dong, Wenfei / Ma, Hanbin et al. | 2023
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Highly Responsive Broadband (250~1000 nm) DUV-NIR Photodetector and Tunable Emitter Enabled by III-V Nanowire on Silicon for Integrated PhotonicsYu, Huabin / Wang, Rui / Xiao, Shudan / Fu, Lan / Sun, Haiding et al. | 2023
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BEOL Compatible High-Performance Monolayer WSe2 pFETs with Record Gm=190 μS/μm and Ion=350 μA/μm by Direct-Growth on SiO2 Substrate at Reduced TemperaturesWang, Xin / Shi, Xinhang / Xiong, Xiong / Huang, Ru / Wu, Yanqing et al. | 2023
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Power Conversion Semiconductor and Circuit Trends and Challenges for a Sustainable Energy FutureMcDonald, Timothy et al. | 2023
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BEOL Compatible Oxide Power Transistors for On- Chip Voltage Conversion in Heterogenous 3D (H3D) Integrated CircuitsDeng, Sunbin / Kwak, Jungyoun / Lee, Junmo / Aabrar, Khandker Akif / Kim, Tae-Hyeon / Choe, Gihun / Kirtania, Sharadindu Gopal / Zhang, Chengyang / Li, Wantong / Phadke, Omkar et al. | 2023
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Zeroth and higher-order logic with content addressable memoriesPedretti, G. / Bohm, F. / Hizzani, M. / Bhattacharya, T. / Bruel, P. / Moon, J. / Serebryakov, S. / Strukov, D. / Strachan, J.P. / Ignowski, J. et al. | 2023
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14nm High-Performance MTJ with Accelerated STT-Switching and High-Retention Doped Co-Pt Alloy Storage Layer for 1Znm MRAMNakayama, Masahiko / Oikawa, Soichi / Kamata, Chikayoshi / Toko, Masaru / Itai, Shogo / Takashima, Rina / Sugiyama, Hideyuki / Fukuda, Kenji / Koike, Takeo / Saitoh, Masumi et al. | 2023
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Ultrasensitive Retinomorphic Dim-Light Vision with In-Sensor Convolutional Processing Based on Reconfigurable Perovskite-Bi2O2Se HeterotransistorsXu, Lei / Liu, Junling / Liu, Shuo / Zhang, Liangliang / He, Ming / Huang, Ru et al. | 2023
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Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric CapacitorsMukherjee, S. / Bizindavyi, J. / Luo, Y-C. / Clima, S. / Read, J. / Popovici, M. I. / Xiang, Y. / Bazzazian, N. / Belmonte, A. / Delhougne, R. et al. | 2023
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ESD Challenges in 300nm Si Substrate of DTCO/STCO Scaling OptionsChen, W.-C. / Chen, S.-H. / Veloso, A. / Serbulova, K. / Hellings, G. / Groeseneken, G. et al. | 2023
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Demonstration of a Stacked CMOS Inverter at 60nm Gate Pitch with Power Via and Direct Backside Device ContactsRadosavljevic, Marko / Huang, C.-Y. / Galatage, R. / Qayyum, M. F. / Wiedemer, J. A. / Clinton, E. / Bennett, D. / Ryu, H. / Thomas, N. K. / Morrow, P. et al. | 2023
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Towards CMOS Capacitance Sensors for DNA Origami CharacterizationSajal, M. S. R. / Lin, K.-C. / Gilpin, Y. / Walawalkar, V. / Dehghandehnavi, F. / Taylor, R. E. / Dandin, M. et al. | 2023
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First Demonstration of Trench-shaped 6.5-kV n-channel SiC IGBT with Trench-etched Double-diffused MOS (TED-MOS) StructureWatanabe, Naoki / Shimizu, Haruka / Shima, Akio et al. | 2023
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Bayesian Neural Network Implemented by Dynamically Programmable Noise in Vanadium OxideOh, S. / Xiao, T. P. / Bennett, C. / Weiss, A. J / Bishop, S. R. / Finnegen, P. S. / Fuller, E. J. / Agarwal, S. / Talin, A. A. et al. | 2023
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Geometric Scattering Describing Mode-Coupling Effects in Non-Uniform Cross-Sections for Non-Equilibrium Green’s Function and Multi Subband Boltzmann Transport Equation SolversAhn, Phil-Hun / Hong, Sung-Min et al. | 2023
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Enhanced Endurance Characteristics in High Performance 16nm Selector Only Memory (SOM)Park, I.-M. / Lee, K. W. / Park, J.-H. / Song, S. J. / Kim, T. Y. / Wu, Z. / Lee, W. J. / Choi, B. D. / Jeong, Y. J. / Oh, S. C. et al. | 2023
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Reliability-Aware Ultra-Scaled IDG-InGaZnO-FET Compact Model to Enable Cross-layer Co-design for Highly Efficient Analog Computing in 2T0C-DRAMXu, Lihua / Chen, Kaifei / Li, Zhi / Guo, Jingrui / Wang, Linfang / Zhao, Yue / Huang, Shijie / Zhou, Zhidao / Dou, Chunmeng / Yang, Guanhua et al. | 2023
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Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In2O3 Dual-Gate TransistorAabrar, Khandker Akif / Gopal Kirtania, Sharadindu / Deng, Sunbin / Choe, Gihun / Khan, Asif / Yu, Shimeng / Datta, Suman et al. | 2023
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Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide ChannelChou, Ang-Sheng / Hsu, Ching-Hao / Lin, Yu-Tung / Arutchelvan, Goutham / Chen, Edward / Hung, Terry Y.T. / Hsu, Chen-Feng / Chou, Sui-An / Lee, Tsung-En / Madia, Oreste et al. | 2023
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HyFET—A GaN/SiC Hybrid Field-Effect TransistorFeng, Sirui / Zheng, Zheyang / Wang, Yuru / Lyu, Gang / Liu, Kai / Cheng, Yan / Chen, Junting / Chen, Tao / Zhang, Li / Song, Wenjie et al. | 2023
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First Demonstration of a Bayesian Machine based on Unified Memory and Random Source Achieved by 16-layer Stacking 3D Fe-Diode with High Noise Density and High Area EfficiencyGong, Tiancheng / Wu, Qiqiao / Huang, Yuanquan / Jiang, Haijun / Yang, Jianguo / Luo, Qing / Chung, Steve S. / Liu, Ming et al. | 2023
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Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention DegradationSun, Zixuan / Cai, Puyang / Song, Jiahao / Wang, Da / Liu, Zhuyou / Zhou, Longda / Zhu, Tianxiang / Xue, Yongkang / Liu, Yong / Wang, Zirui et al. | 2023
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Comprehensive Design Guidelines of Gate Stack for QLC and Highly Reliable Ferroelectric VNANDLim, Suhwan / Kim, Taeyoung / Myeong, Ilho / Park, Sanghyun / Noh, Suseong / Lee, Seung Min / Woo, Jongho / Ko, Hanseung / Noh, Youngji / Choi, Moonkang et al. | 2023
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A Selective Overtone MEMS-based Quartz Oscillator with Low Acceleration SensitivityChang, Chin-Yu / Hsieh, Po-Cheng / Yao, Chun-Wei / Yang, Chien-Cheng / Li, Sheng-Shian et al. | 2023
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Dual-wavelength neural probe for simultaneous opto-stimulation and recording fabricated in a monolithically integrated CMOS/photonics technology platformNeutens, P. / O'Callaghan, J. / De Ceulaer, J. / Tonon, E. / Welkenhuysen, M. / Lopez, C. M. / Andrei, A. / Putzeys, J. / Mahmud-Ul-Hasan, Md. / Tilmans, H.A.C. et al. | 2023
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First Demonstration of Innovative 3D AND-Type Fully-Parallel Convolution Block with Ultra-High Area-and Energy-EfficiencyKim, Jangsaeng / Im, Jiseong / Ko, Jonghyun / Lee, Soochang / Kwon, Dongseok / Shin, Wonjun / Hwang, Joon / Koo, Ryun-Han / Choi, WooYoung / Lee, Jong-Ho et al. | 2023
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Comparative Advantages of 2T-nC FeRAM in Empowering High Density 3D Ferroelectric Capacitor MemoryDeng, Shan / Xiao, Yi / Zhao, Zijian / Huang, Tzu-Jung / Kampfe, Thomas / Narayanan, Vijaykrishnan / Ni, Kai et al. | 2023
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Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based ModelingWu, Junjie / Ren, Pengpeng / Zhang, Chenyang / Xiao, Yu / Xue, Yongkang / Li, Yu / Wang, Xiaolin / Zhang, Lining / Liu, Junhua / Zhang, Jianfu et al. | 2023
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Tungsten Interconnect Resistance Reduction Enabling Energy Efficient and High Performance Applications for 2nm Node and BeyondThareja, Gaurav / Pal, Ashish / Ma, Quan / Ching, Chi / Patel, Sahil / Gao, Xingyao / Dag, Sefa / Qi, Zhimin / Zhang, Aixi / Yue, Shiyu et al. | 2023
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Electromigration of Backside Power Delivery Networks for PPA-Reliability Tradeoffs at N2 NodeCai, Linlin / Chen, Yutao / Zhang, Haoyu / Lin, Jianwen / Yin, Binyu / Chen, Wangyong et al. | 2023
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EUV Energy EfficiencyThijssen, Theo / Van der Net, Ton / Janssen, Toni / Luijten, Carlo et al. | 2023
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A Noble Design Methodology to Minimize Plasma Induced Damage Using a Distributed Network Model in VNAND Flash MemoryLee, Se Hoon / Um, Junghwan / Kim, Kanglib / Lee, Kyoungseo / Chang, Seongpil / Lee, Jaeshin / Han, Hunhee / Cho, Sungil / Lim, Junhee / Park, Minchul et al. | 2023
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Status and Perspectives of Chalcogenide-based CrossPoint MemoriesPellizzer, F. / Pirovano, A. / Bez, R. / Meyer, R. L. et al. | 2023
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Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETsChen, Chun-Kuei / Xu, Zefeng / Hooda, Sonu / Pan, Jieming / Zamburg, Evgeny / Thean, Aaron Voon-Yew et al. | 2023
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Back-Illuminated SPAD in 40 nm CIS Technology Achieving 56 ps Timing Jitter With 15 V Breakdown Voltage for Short/Mid-Range LiDAR ApplicationsPark, Eunsung / Eom, Doyoon / Kim, Joo-Hyun / An, Hyuk / Yi, Suhyun / Kim, Kyung-Do / Kim, Jongchae / Oh, Hoon-Sang / Choi, Woo-Young / Lee, Myung-Jae et al. | 2023
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Multi-gate FeFET Discriminates Spatiotemporal Pulse Sequences for Dendrocentric LearningChen, Hugo J.-Y. / Beauchamp, Matthew / Toprasertpong, Kasidit / Huang, Fei / Le Coeur, Louis / Nemec, Thorgund / Wong, H.-S. Philip / Boahen, Kwabena et al. | 2023
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Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer DepositionIto, Kenji / Narita, Tetsuo / Iguchi, Hiroko / Iwasaki, Shiro / Kikuta, Daigo / Kano, Emi / Ikarashi, Nobuyuki / Tomita, Kazuyoshi / Horita, Masahiro / Suda, Jun et al. | 2023
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IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETsKim, Bong Ho / Kim, Seong Kwang / Kuk, Song-hyeon / Suh, Yoon-Je / Jeong, Jaeyong / Kim, Joon Pyo / Geum, Dae-Myeong / Kim, Sanghyeon et al. | 2023
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Wafer-scale CVD Monolayer WSe2 p-FETs with Record-high 727 μA/μm Ion and 490 μS/ μm gmax via Hybrid Charge Transfer and Molecular DopingLan, Hao-Yu / Tripathi, Rahul / Liu, Xiangkai / Appenzeller, Joerg / Chen, Zhihong et al. | 2023
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Interlayer Engineering to Achieve <1 m2K/GW Thermal Boundary Resistances to Diamond for Effective Device CoolingWoo, K. / Malakoutian, M. / Jo, Y. / Zheng, X. / Pfeifer, T. / Mandia, R. / Hwang, T. / Aller, H. / Field, D. / Kasperovich, A. et al. | 2023
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3D Monolithically Integrated Device of Si CMOS Logic, IGZO DRAM-like, and 2D MoS2 Phototransistor for Smart Image SensingLee, F.M. / Tseng, P. H. / Lin, Y. Y. / Lin, Y. H. / Weng, W. L. / Lin, N. C. / Sung, P. J. / Yang, C. C. / Wu, W. F. / Shen, C. H. et al. | 2023
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1.1 A/mm ß-Ga2O3-on-SiC RF MOSFETs with 2.3 W/mm Pout and 30% PAE at 2 GHz and fT/fmax of 27.6/57 GHzZhou, Min / Zhou, Hong / Huang, Sen / Si, Mengwei / Zhang, Yuhao / Luan, Tiantian / Yue, Hongqing / Dang, Kui / Wang, Chenlu / Liu, Zhihong et al. | 2023
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A Novel FeFET Array-Based PUF: Co-optimization of Entropy Source and CRP Generation for Enhanced Robustness in IoT SecurityShao, Hanyong / Zhou, Yuejia / Huang, Weiqin / Su, Chang / Fu, Zhiyuan / Luo, Wenpu / Tang, Kechao / Huang, Ru et al. | 2023
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In-Memory Compute Chips with Carbon-based Projected Phase-Change Memory DevicesSyed, G. S. / Brew, K. / Vasilopoulos, A. / Jonnalagadda, V. P. / Kersting, B. / Philip, T. / Bragaglia, V. / Ambrogio, S. / Buchel, J. / Giannopoulos, J. et al. | 2023
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High-Performance Monolayer and Bilayer MoS2 Vibrating Channel Transistors for Ultrasensitive Drain-Source Current Readout of Resonant MotionEnamul Hoque Yousuf, S M / Feng, Philip X.-L. et al. | 2023
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Engineering the kinetics of redox-based memristive devices for neuromorphic computingDittmann, R. / Sarantopoulos, A. / Bengel, C. / Gutsche, A. / Cuppers, F. / Hoffmann-Eifert, S. / Menzel, S. et al. | 2023
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Wafer Bonding as Next Generation Scaling BoosterWernicke, T. / Lindner, P. / Uhrmann, T. / Wimplinger, M. et al. | 2023
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Thermal Management in Multi-Finger GaN-on-Si HEMTs: Understanding and Mitigating Self-Heating and Thermal Crosstalk for Enhanced Device ReliabilityJeong, Jaeyong / Choi, Sung Joon / Shim, Joonsup / Kim, Eunjung / Kim, Seong Kwang / Kim, Bong Ho / Kim, Joon Pyo / Suh, Yoon-Je / Beak, Woo Jin / Geum, Dae-Myeong et al. | 2023
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Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed-Polarization DopingKumabe, T. / Yoshikawa, A. / Kushimoto, M. / Honda, Y. / Arai, M. / Suda, J. / Amano, H. et al. | 2023
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Wake-Up of Ultrathin Ferroelectric Hf0.5Zr0.5O2: The Origin and Physical ModelingCho, Chen-Yi / Chao, Tzu-Yi / Lin, Tzu-Yao / Wang, I-Ting / Chen, Yu-Sheng / Ong, Yi-Ching / Lin, Yu-De / Yeh, Po-Chun / Sheu, Shyh-Shyuan / Hou, Tuo-Hung et al. | 2023
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First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 mA/μm and gm of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °CHu, Qianlan / Gu, Chengru / Liu, Shiyuan / Zeng, Min / Zhu, Shenwu / Kang, Jiyang / Liu, Ranhui / Zhao, Wenjie / Tong, Anyu / Li, Qijun et al. | 2023
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High-Endurance FeFET with Metal-Doped Interfacial Layer for Controlled Charge Trapping and Stabilized PolarizationSuzuki, Kunifumi / Sakuma, Kiwamu / Yoshimura, Yoko / Ichihara, Reika / Matsuo, Kazuhiro / Hagishima, Daisuke / Fujiwara, Makoto / Saitoh, Masumi et al. | 2023
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A Device Design Approach to Mitigate Strain Impact on Stretchable Carbon-Nanotube Thin-Film TransistorsWu, Can / Zhong, Donglai / Wang, Weichen / Jiang, Yuanwen / Nishio, Yuya / Yuan, Yujia / Tok, Jeffrey B.-H. / Bao, Zhenan et al. | 2023
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Unveiling the Impact of High Frequency On-State and Off-State Operation on Gate Dielectric Reliability: A Comprehensive AnalysisChang, Y. K. / Liao, P. J. / Liu, Y. S. / Chen, P. S. / Sou, K. P. / Wang, C. H. / Huang, T. J. / Chuang, W. H. / Lee, J. H. et al. | 2023
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Point-of-Care Testing (POCT) System based on self-Recovery Memoristor Chip with Low Energy Consuption(1.547 TOPS/W) and High Recognition (1142 fram/s)Zheng, Xu / Wu, Lizhou / Liu, Yixuan / Wu, Qiqiao / Xie, Yuanlu / Li, Yi / Lai, Jinru / Sun, Wenxuan / Dong, Danian / Yu, Jie et al. | 2023
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ESD HBM 3kV Discharge for Monolithic GaN-on-Si HEMTs Integrated ChinsWang, Tz-Wun / Go, Chang-Lin / Hung, Sheng-Hsi / Chen, Chi-Yu / Chiu, Po-Jui / Chen, Ke-Homg / Zheng, Kuo-Lin / Lin, Ying-Hsi / Tsai, Tsung-Yen / Lin, Shian-Ru et al. | 2023
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A Liouville Model for Polycrystalline Ferroelectrics Emphasizing Kinetic Integrity and Deployability in Circuits with Charge and Current ConstraintsYau, Zhao-Yi / Zhao, Ruiting / Wang, Zhenze / Lu, Tian / Liu, Houfang / Xue, Kan-Hao / Miao, Xiangshui / Yang, Yi / Ren, Tian-Ling et al. | 2023
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Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability AnalysesProvias, A. / Knobloch, T. / Kitamura, A. / O'Brien, K. P. / Dorow, C. J. / Waldhoer, D. / Stampfer, B. / Penumatcha, A. V. / Lee, S. / Ramamurthy, R. et al. | 2023
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Paradigm Shift in Semiconductor Technology Scaling Calling for Advancements in Design ModellingPrasad, Divya / Kini, Girish / Chandrasekaran, Sriram / Gurumurthi, Sudhanva / Novak, Amy / Burd, Tom et al. | 2023
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Simultaneously Achieving Large Gate Swing and Enhanced Threshold Voltage Stability in Metal/Insulator/n-GaN Gate HEMTYang, Junjie / Wei, Jin / Wang, Maojun / Li, Teng / Yu, Jingjing / Yang, Xuelin / Wang, Jinyan / Hao, Yilong / Shen, Bo et al. | 2023
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Low voltage (<1.8 V) and high endurance (>1M) 1-Selector/1-STT-MRAM with ultra-low (1 ppb) read disturb for high density embedded memory arraysAmbrosi, E. / Wu, C. H. / Song, M. Y. / Lee, H. Y. / Li, K. S. / Lin, C. C. / Hsu, C. F. / Kuo, C. C. / Chang, W. N. / Chen, Y. J. et al. | 2023
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First Demonstration of HZO-LNOI Integrated Ferroelectric Electro-Optic Modulator and Memory to Enable Reconfigurable Photonic SystemsXu, Zefeng / Chen, Chun-Kuei / Lin, Hong-Lin / Gao, Yuan / Ke, Wei / Xu, Baochang / Dmitriev, Pavel / Arbiz, Carlan / Zamburg, Evgeny / Touzard, Steven et al. | 2023
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High-Speed Embedded Memory for AI and High-Performance ComputeWang, Yih / Chen, Yen-Huei / Chih, Y.D. / Fujiwara, Hidehiro / Mori, Haruki / Wang, Yu-Jen / Chang, Tsung-Yung Jonathan et al. | 2023
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THz InP/GaAsSb DHBTs with Record fAVG=800 GHz: Characterization to 330 GHzArabhavi, A.M. / Deng, M. / Ciabattini, F. / Hamzeloui, S. / Saranovac, T. / Chaudhary, R. / Ebrahimi, M. / Ostinelli, O. / Maneux, C. / Bolognesi, C.R. et al. | 2023
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A Low Phase Noise Piezoelectric MEMS Oscillator with Low Power ConsumptionLo, Pang-Che / Lin, Wei / Li, Sheng-Shian et al. | 2023
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3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixelMota-Frutuoso, T. / Lapras, V. / Brunet, L. / Basset, L. / Lugo, J. / Fenouillet-Beranger, C. / Vinet, M. / Lattard, D. / Boulard, F. / Exbraya, Y. et al. | 2023
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High Area Efficiency (6 TOPS/mm2) Multimodal Neuromorphic Computing System Implemented by 3D Multifunctional RRAM ArraySun, Wenxuan / Li, Yi / Zhang, Woyu / Zheng, Xu / Dong, Danian / Yu, Jie / Lai, Jinru / Fan, Shaoyang / Wang, Hongzhou / Xu, Xiaoxin et al. | 2023
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AC Impedance Characteristics of Ferroelectric Hf0.5Zr0.5O2: from 1 kHz to 10 GHzKim, Taekyong / Borujeny, Elham Rafie / Sardinero-Meiras, Ignacio / Grajal, Jesus / Cadien, Kenneth C. / Antoniadis, Dimitri A. / Del Alamo, Jesus A. et al. | 2023
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Intercalated Graphene as Next Generation Back-end-of-Line ConductorsLi, S. W. / Chan, Y. C. / Hsu, C. H. / Yang, S. Y. / Liao, K. Y. / Ho, C. H. / Chen, C. Y. / Chen, H. P. / Lee, M. H. / Magyari-Kope, B. et al. | 2023