High efficiency nanosecond generator based on semiconductor opening switch (Englisch)
- Neue Suche nach: Lyubutin, S. K.
- Neue Suche nach: Pedos, M. S.
- Neue Suche nach: Ponomarev, A. V.
- Neue Suche nach: Rukin, S. N.
- Neue Suche nach: Slovikovsky, B. G.
- Neue Suche nach: Tsyranov, S. N.
- Neue Suche nach: Vasiliev, P. V.
- Neue Suche nach: Lyubutin, S. K.
- Neue Suche nach: Pedos, M. S.
- Neue Suche nach: Ponomarev, A. V.
- Neue Suche nach: Rukin, S. N.
- Neue Suche nach: Slovikovsky, B. G.
- Neue Suche nach: Tsyranov, S. N.
- Neue Suche nach: Vasiliev, P. V.
In:
IEEE Transactions on Dielectrics and Electrical Insulation
;
18
, 4
;
1221-1227
;
2011
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:High efficiency nanosecond generator based on semiconductor opening switch
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Beteiligte:Lyubutin, S. K. ( Autor:in ) / Pedos, M. S. ( Autor:in ) / Ponomarev, A. V. ( Autor:in ) / Rukin, S. N. ( Autor:in ) / Slovikovsky, B. G. ( Autor:in ) / Tsyranov, S. N. ( Autor:in ) / Vasiliev, P. V. ( Autor:in )
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Erschienen in:IEEE Transactions on Dielectrics and Electrical Insulation ; 18, 4 ; 1221-1227
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.08.2011
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Format / Umfang:16564427 byte
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 18, Ausgabe 4
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IEEE Transactions on Dielectrics and Electrical Insulation - Table of contents| 2011
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IEEE Dielectrics and Electrical Insulation Society - Committee| 2011
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IEEE Transactions on Dielectrics and Electrical Insulation [Editorial Board]| 2011
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Information for authors| 2011