Deffect profiling in the SiO2/ Al2O3 interface using Variable Tcharge-Tdischarge Amplitude Charge Pumping (VT2ACP) (Englisch)
- Neue Suche nach: Zahid, M. B.
- Neue Suche nach: Degraeve, R.
- Neue Suche nach: Cho, M.
- Neue Suche nach: Pantisano, L.
- Neue Suche nach: Aguado, D. R.
- Neue Suche nach: Van. Houdt, J.
- Neue Suche nach: Groeseneken, G.
- Neue Suche nach: Jurczak, M.
- Neue Suche nach: Zahid, M. B.
- Neue Suche nach: Degraeve, R.
- Neue Suche nach: Cho, M.
- Neue Suche nach: Pantisano, L.
- Neue Suche nach: Aguado, D. R.
- Neue Suche nach: Van. Houdt, J.
- Neue Suche nach: Groeseneken, G.
- Neue Suche nach: Jurczak, M.
In:
2009 IEEE International Reliability Physics Symposium
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21-25
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2009
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Deffect profiling in the SiO2/ Al2O3 interface using Variable Tcharge-Tdischarge Amplitude Charge Pumping (VT2ACP)
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Beteiligte:Zahid, M. B. ( Autor:in ) / Degraeve, R. ( Autor:in ) / Cho, M. ( Autor:in ) / Pantisano, L. ( Autor:in ) / Aguado, D. R. ( Autor:in ) / Van. Houdt, J. ( Autor:in ) / Groeseneken, G. ( Autor:in ) / Jurczak, M. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.04.2009
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Format / Umfang:315781 byte
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Preface| 2009
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Copyright| 2009
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Technical program committee| 2009
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2009 IRPS tutotial program| 2009
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Assuring microelectronic component reliability and qualification — A fabless company's perspective| 2009
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2009 IRPS officers and committees| 2009
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A development alliance and manufacturing platform business model for robust chip offerings| 2009
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2010 IEEE international reliability physics symposium| 2009
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Mark your calendar and start planning to attend, and possibly contribute a paper to the following symposium: 2010 IEEE international reliability physics symposium| 2009
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Board of directors| 2009
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ESREF best paper reference| 2009
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Table of contents| 2009
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2009 IRPS reliability year in review seminar| 2009
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Biographies| 2009
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Unambiguous identification of the NBTI recovery mechanism using ultra-fast temperature changesAichinger, Thomas / Nelhiebel, Michael / Grasser, Tibor et al. | 2009
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Successful measurements of Electron energy dependence of interface-trap-induced scattering in N-MOSFETsKobayashi, Shigeki / Ishihara, Takamitsu / Saitoh, Masumi / Nakabayashi, Yukio / Numata, Toshinori / Uchida, Ken et al. | 2009
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Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - developed Hall effect measurements and comparison with theoryKobayashi, S. / Ishihara, T. / Saitoh, M. / Nakabayashi, Y. / Numata, T. / Uchida, K. et al. | 2009
- 13
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Physics and mechanisms of dielectric trap profiling by Multi-frequency Charge Pumping (MFCP) methodMasuduzzaman, M. / Islam, A.E. / Alam, M.A. et al. | 2009
- 21
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Deffect profiling in the SiO2/ Al2O3 interface using Variable Tcharge-Tdischarge Amplitude Charge Pumping (VT2ACP)Zahid, M. B. / Degraeve, R. / Cho, M. / Pantisano, L. / Aguado, D. R. / Van. Houdt, J. / Groeseneken, G. / Jurczak, M. et al. | 2009
- 26
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A unified model for permanent and recoverable NBTI based on hole trapping and structure relaxationIelmini, Daniele / Manigrasso, Mariaflavia / Gattel, Francesco / Valentini, Grazia et al. | 2009
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A two-stage model for negative bias temperature instabilityGrasser, T. / Kaczer, B. / Goes, W. / Aichinger, Th. / Hehenberger, Ph. / Nelhiebel, M. et al. | 2009
- 45
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Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrateSato, Motoyuki / Aoyama, Takayuki / Nara, Yasuo / Ohji, Yuzuru et al. | 2009
- 45
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Systematic study of the relationship between 1/f noise, interface state defects and mobility degradation of high-K/metal CMOSFETs on (110) and (100) substrateSato, M. / Aoyama, T. / Nara, Y. / Ohji, Y. et al. | 2009
- 51
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Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissionsMa, H.C. / Chiu, J.P. / Tang, C.J. / Wang, Tahui / Chang, C.S. et al. | 2009
- 55
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NBTI from the perspective of defect states with widely distributed time scalesKaczer, B. / Grasser, T. / Martin-Martinez, J. / Simoen, E. / Aoulaiche, M. / Roussel, Ph. J. / Groeseneken, G. et al. | 2009
- 61
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Reliability of GaN HEMTs: current status and future technologyOhki, Toshihiro / Kikkawa, Toshihide / Inoue, Yusuke / Kanamura, Masahito / Okamoto, Naoya / Makiyama, Kozo / Imanishi, Kenji / Shigematsu, Hisao / Joshin, Kazukiyo / Hara, Naoki et al. | 2009
- 71
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Influence of GaN cap on robustness of AlGaN/GaN HEMTsIvo, Ponky / Glowacki, Arkadiusz / Pazirandeh, Reza / Bahat-Treidel, Eldad / Lossy, Richard / Wurfl, Joachim / Boit, Christian / Trankle, Gunther et al. | 2009
- 76
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Reliability review of 250 GHz fully self aligned heterojunction bipolar transistors for millimeterwave applicationsDiop, Malick / Marin, Mathieu / Revil, Nathalie / Pourchon, Franck / Leyris, Cedric / Chevalier, Pascal / Ghibaudo, Gérard et al. | 2009
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Mixed-mode stress degradation mechanisms in pnp SiGe HBTsChakraborty, Partha S. / Appaswamy, Aravind C. / Saha, Prabir K. / Jha, Nand K. / Cressler, John D. / Yasuda, Hiroshi / Eklund, Bob / Wise, Rick et al. | 2009
- 89
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Reliability issues in AlGaN based deep ultraviolet light emitting diodesKhan, Asif / Hwang, Seongmo / Lowder, Jonathan / Adivarahan, Vinod / Fareed, Qhalid et al. | 2009
- 94
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Degradation mechanisms beyond device self-heating in deep ultraviolet light emitting diodesMoe, Craig G. / Reed, Meredith L. / Garrett, Gregory A. / Metcalfe, Grace D. / Alexander, Troy / Shen, Hongen / Wraback, Michael / Lunev, Alex / Bilenko, Yuriy / Hu, Xuhong et al. | 2009
- 98
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Thermally activated degradation and package instabilities of low flux LEDSTrevisanello, L. / De Zuani, F. / Meneghini, M. / Trivellin, N. / Zanoni, E. / Meneghesso, G. et al. | 2009
- 104
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Reliability and lifetime of flexible organic electronicsKreger, Melissa / Ziera, Eitan / Eckert, Bob / Lee, Steve / Pusateri, Bob / Wicks, Steve / Rodman, Shiela / Hauch, Jens / Brabec, Christoph et al. | 2009
- 105
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Improved reliability of organic light-emitting diodes with indium-zinc-oxide anode contactPinato, A. / Meneghini, M. / Cester, A. / Wrachien, N. / Tazzoli, A. / Zanoni, E. / Meneghesso, G. / D'Andrade, B. / Esler, J. / Xia, S. et al. | 2009
- 109
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Threshold voltage instability in organic TFT with SiO2 and SiO2/parylene-stack dielectricsWrachien, Nicola / Cester, Andrea / Pinato, Alessandro / Meneghini, Matteo / Tazzoli, Augusto / Meneghesso, Gaudenzio / Kovac, Jaroslav / Jakabovic, Jan / Donoval, Daniel et al. | 2009
- 117
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Life-stress relationship for thin film transistor gate line interconnects on flexible substratesMartin, Thomas / Christou, Aris et al. | 2009
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Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devicesBoniardi, Mattia / Ielmini, Daniele / Lavizzari, Simone / Lacaita, Andrea L. / Redaelli, Andrea / Pirovano, Agostino et al. | 2009
- 128
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A new automated methodology for random telegraph signal identification and characterization: a case study on phase change memory arraysChimenton, A. / Zambelli, C. / Olivo, P. et al. | 2009
- 134
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Effect of ReRAM-stack asymmetry on read disturb immunityTerai, Masayuki / Kotsuji, Setsu / Hada, Hiromitsu / Iguchi, Noriyuki / Ichihashi, Toshinari / Fujieda, Shinji et al. | 2009
- 139
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A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junctionYoshida, Chikako / Kurasawa, Masaki / Lee, Young Min / Tsunoda, Koji / Aoki, Masaki / Sugiyama, Yoshihiro et al. | 2009
- 143
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Electromigration behavior of micro Sn bump under pulsed DCYou, Ha-Young / Kim, Byoung-Joon / Joo, Young-Chang et al. | 2009
- 149
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Comparison of electromigration behaviors of SnAg and SnCu soldersLu, Minhua / Shih, Da-Yuan / Goldsmith, Charles / Wassick, Thomas et al. | 2009
- 155
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Package design and material impact on board level reliability of fine pitch packagesSyed, Ahmer et al. | 2009
- 156
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Process integration considerations towards 300 mm TSV manufacturing-moving beyond the champion SEMRamaswami, Sesh et al. | 2009
- 157
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Impact of deep trench isolation on advanced SiGe HBT reliability in radiation environmentsPhillips, Stanley D. / Sutton, Akil K. / Appaswamy, Aravind / Bellini, Marco / Cressler, John D. / Grillo, Alex / Vizkelethy, Gyorgy / Dodd, Paul / McCurdy, Mike / Reed, Robert et al. | 2009
- 165
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Analytical expression for temporal width characterization of radiation-induced pulse noises in SOI CMOS logic gatesKobayashi, Daisuke / Makino, Takahiro / Hirose, Kazuyuki et al. | 2009
- 170
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The effect of elevated temperature on digital single event transient pulse widths in a bulk CMOS technologyGadlage, M. J. / Ahlbin, J. R. / Narasimham, B. / Ramachandran, V. / Dinkins, C. A. / Bhuva, B. L. / Schrimpf, R. D. / Shuler, R. L. et al. | 2009
- 174
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Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistorsMcLain, Michael L. / Barnaby, Hugh J. / Esqueda, Ivan S. / Oder, Jonathan / Vermeire, Bert et al. | 2009
- 180
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Improvised explosive device (IED) counter-measures in IraqZiegler, James et al. | 2009
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NSEU impact on commercial avionicsMatthews, David C. / Dion, Michael J. et al. | 2009
- 194
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Single-event effects on ultra-low power CMOS circuitsCasey, Megan C. / Bhuva, Bharat L. / Nation, Sarah A. / Amusan, Oluwole A. / Loveless, T. Daniel / Massengill, Lloyd W. / McMorrow, Dale / Melinger, Joseph S. et al. | 2009
- 199
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Comparison of alpha-particle and neutron-induced combinational and sequential logic error rates at the 32nm technology nodeGill, B. / Seifert, N. / Zia, V. et al. | 2009
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Alpha particle and neutron-induced soft error rates and scaling trends in SRAMKobayashi, Hajime / Kawamoto, Nobutaka / Kase, Jun / Shiraish, Ken et al. | 2009
- 212
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An industrial fault injection platform for soft-error dependability analysis and hardening of complex system-on-a-chipDaveau, Jean-Marc / Blampey, Alexandre / Gasiot, Gilles / Bulone, Joseph / Roche, Philippe et al. | 2009
- 221
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Qualification issues and pitfalls for advanced semiconductor devices in spaceSunderland, David A. et al. | 2009
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Reliability framework in a fabless-foundry environmentPai, S.Y. / Lee, J.K. Jerry / Ng, Kenny / Hsiao, Reality / Su, K.C. / Chou, E.N. et al. | 2009
- 236
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Advanced process & product reliability development in fabless environmentVerma, Gautam / Wu, Kenneth / Euzent, Bruce / Huang, Cheng et al. | 2009
- 244
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Qualification & reliability monitoring for small quantity ASIC populationsAlexander, David R. / Philpy, Stephen / Pierce, Donald et al. | 2009
- 247
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A complete and automatic advanced model verification platform for 32nm technology and beyondLi, Yanfeng / Radojcic, Riko / Nakamoto, Mark / Fatehi, Juzer / Zhang, Geng / Zhang, Xisheng / Kang, J.F. et al. | 2009
- 253
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Reliability of thyristor-based memory cellsSalling, Craig / Yang, Kevin J. / Gupta, Rajesh / Hayes, Dennis / Tamayo, Janice / Gopalakrishnan, Vasudevan / Robins, Scott et al. | 2009
- 260
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Improved integrated circuits qualification using Dynamic Laser Stimulation techniquesDeyine, A. / Sanchez, K. / Perdu, P. / Battistella, F. / Lewis, D. et al. | 2009
- 266
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Compensation of operation-related FMAX degradation by adaptive control of circuit operating voltageWiatr, M. A. / Heller, R. / Hoentschel, J. / Geilenkeuser, R. / Wong, S. J. / Shah, V. / Mantei, T. / Majer, M. / Pruefer, E. / Scott, C. et al. | 2009
- 273
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Emerging post-CMOS switch options - a product reliability perspectiveBernstein, Kerry et al. | 2009
- 274
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Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memoriesCompagnoni, Christian Monzio / Chiavarone, Luca / Calabrese, Marcello / Gusmeroli, Riccardo / Ghidotti, Michele / Lacaita, Andrea L. / Spinelli, Alessandro. S. / Visconti, Angelo et al. | 2009
- 280
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Electrical field dependence of data retention in high-k interpoly dielectricsChung, Chun-Hyung / Lim, Seung-Hyun / Lim, Sang-Wook / Kim, Young-Sun / Choi, SY / Moon, Joo-Tae et al. | 2009
- 284
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Characterization of threshold voltage instability after program in charge trap flash memoryKim, Bio / Baik, SeungJae / Kim, Sunjung / Lee, Joon-Gon / Koo, Bonyoung / Choi, Siyoung / Moon, Joo-Tae et al. | 2009
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Study of gate-injection operated SONOS-type devices using the gate-sensing and channel-sensing (GSCS) methodDu, Pei-Ying / Lue, Hang-Ting / Wang, Szu-Yu / Huang, Tiao-Yuan / Hsieh, Kuang-Yeu / Liu, Rich / Lu, Chih-Yuan et al. | 2009
- 294
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Study of localized tunnel oxide degradation after hot carrier stressing using a novel mid-bandgap voltage characterization methodTsai, Cheng-Hung / Shih, Yen-Hao / Hsiao, Yi-Hsuan / Hsu, Tzu-Hsuan / Hsieh, Kuang Yeu / Liu, Rich / Lu, Chih-Yuan et al. | 2009
- 301
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Reliability of single and dual Layer Pt nanocrystal devices for NAND flash applications: A 2-region model for endurance defect generationSingh, Pawan K / Bisht, Gaurav / Sivatheja, M / Sandhya, C / Mukhopadhyay, Gautam / Mahapatra, Souvik / Hofmann, Ralf / Singh, Kaushal / Krishna, Nety et al. | 2009
- 307
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Three bits per cell floating gate NAND flash memory technology for 30nm and beyondNitta, H. / Kamigaichi, T. / Arai, F. / Futatsuyama, T. / Endo, M. / Nishihara, N. / Murata, T. / Takekida, H. / Izumi, T. / Uchida, K. et al. | 2009
- 311
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Study of formation mechanism of nickel silicide discontinuities in high performance CMOS devicesKudo, S. / Hirose, Y. / Futase, T. / Ogawa, Y. / Yamaguchi, T. / Kihara, K. / Kashihara, K. / Murata, N. / Katayama, T. / Asayama, K. et al. | 2009
- 317
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Material analysis with a helium ion microscopeScipioni, Larry / Thompson, William / Sijbrandij, Sybren / Ogawa, Shinichi et al. | 2009
- 322
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Methodology to support laser-localized soft defects on analog and mixed-mode advanced ICsSienkiewcz, Magdalena / Firiti, Abdellatif / Crepel, Olivier / Perdu, Philippe / Sanchez, Kevin / Lewis, Dean et al. | 2009
- 327
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Electron beam induced temperature oscillation for qualitative thermal conductivity analysis by an SThM/ESEM-hybrid-systemTiedemann, A.-K. / Heiderhoff, R. / Balk, L. J. / Phang, J. C. H. et al. | 2009
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Electron beam induced current investigation of stress-induced leakage and breakdown processes in high-k stacksChen, Jun / Sekiguchi, Takashi / Fukata, Naoki / Takase, Masami / Chikyow, Toyohiro / Hasunuma, Ryu / Yamabe, Kikuo / Sato, Motoyuki / Nara, Yasuo / Yamada, Keisaku et al. | 2009
- 339
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Surface Electro-Static Discharge or mechanical damage: Solving the mystery of metal-to-metal shorts using an innovative failure analysis approachEndrinal, Lesly / Coyne, Edward et al. | 2009
- 343
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Adapted strategies for dew condensation testing to evaluate the reliability of lead free surface finishesMatzner, C. / Feldmann, K. et al. | 2009
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Reliability for manufacturing on 45nm logic technology with high-k + metal gate transistors and Pb-free packagingKasim, Rahim / Connor, Chris / Hicks, Jeff / Jopling, Jason / Litteken, Chris et al. | 2009
- 355
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Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectricsHirano, Izumi / Nakasaki, Yasushi / Fukatsu, Shigeto / Masada, Akiko / Mitani, Yuichiro / Goto, Masakazu / Nagatomo, Koji / Inumiya, Seiji / Sekine, Katsuyuki et al. | 2009
- 362
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Detrimental impact of technological processes on BTI reliability of advanced high-K/metal gate stacksGarros, X. / Casse, M. / Fenouillet-Beranger, C. / Reimbold, G. / Martin, F. / Gaumer, C. / Wiemer, C. / Perego, M. / Boulanger, F. et al. | 2009
- 367
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Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETsFukatsu, Shigeto / Hirano, Izumi / Tatsumura, Kosuke / Masada, Akiko / Fujii, Shosuke / Mitani, Yuichiro / Goto, Masakazu / Inumiya, Seiji / Nakajima, Kazuaki / Kawanaka, Shigeru et al. | 2009
- 373
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Processing impact on the reliability of single metal dual dielectric (SMDD) gate stacksKauerauf, T. / Aoulaiche, M. / Cho, M.J. / Ragnarsson, L.-A. / Schram, T. / Degraeve, R. / Hoffmann, T. / Groeseneken, G. / Biesemans, S. et al. | 2009
- 376
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Degradation of interface integrity between a high-k dielectric thin film and a gate electrode due to excess oxygen in the filmMiura, Hideo / Suzuki, Ken / Ito, Yuta / Samukawa, Seiji / Kubota, Tomonori / Ikoma, Toru / Yoshikawa, Hideki / Ueda, Shigenori / Yamashita, Yoshiyuki / Kobayashi, Keisuke et al. | 2009
- 382
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Random telegraph noise in highly scaled nMOSFETsCampbell, J.P. / Qin, J. / Cheung, K.P. / Yu, L.C. / Suehle, J.S. / Oates, A. / Sheng, K. et al. | 2009
- 389
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Vth fluctuations due to random telegraph signal on work function control in Hf-doped silicate gate stackShimizu, T. / Kato, I. / Yokogawa, S. / Kitagaki, T. / Taniguchi, J. / Suzuki, T. / Tsuboi, T. et al. | 2009
- 395
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Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processesBanno, N. / Sakamoto, T. / Hada, H. / Kasai, N. / Iguchi, N. / Imai, H. / Fujieda, S. / Ichihashi, T. / Hasegawa, T. / Aono, M. et al. | 2009
- 400
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Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect TransistorYeoh, Yun Young / Suk, Sung Dae / Li, Ming / Yeo, Kyoung Hwan / Kim, Dong-Won / Jin, Gyoyoung / Oh, Kyoungsuk et al. | 2009
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Avalanche, joule breakdown and hysteresis in carbon nanotube transistorsPop, Eric / Dutta, Sumit / Estrada, David / Liao, Albert et al. | 2009
- 409
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Reliability challenges for power devices under active cyclingKanert, Werner et al. | 2009
- 416
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Hot carrier effects in trench-based integrated power transistorsMoens, P. / Roig, J. / Desoete, B. / Bauwens, F. / Tack, M. et al. | 2009
- 421
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A new off-state drain-bias TDDB lifetime model for DENMOS deviceChang, S.W. / Chen, Chia Lin / Wang, C. J. / Wu, Kenneth et al. | 2009
- 426
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Hot carrier stress degradation modes in p-type high voltage LDMOS transistorsEnichlmair, H. / Park, J. M. / Carniello, S. / Loeffler, B. / Minixhofer, R. / Levy, M. et al. | 2009
- 432
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TDDB evaluations and modeling of very high-voltage (10kV) capacitorsHiggins, Robert et al. | 2009
- 437
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Improvement of the electrical safe operating area of a DMOS transistor during ESD eventsPodgaynaya, Alevtina / Pogany, Dionyz / Gornik, Erich / Stecher, Matthias et al. | 2009
- 443
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Thermomechanical reliability for emerging device technologies: Implications for ULK integration, 3-D structures and packagingDauskardt, Reinhold H. et al. | 2009
- 444
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The effect of a threshold failure time and bimodal behavior on the electromigration lifetime of copper interconnectsFilippi, R. G. / Wang, P.-C. / Brendler, A. / McLaughlin, P. S. / Poulin, J. / Redder, B. / Lloyd, J. R. / Demarest, J. J. et al. | 2009
- 452
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Void nucleation and growth contributions to the critical current density for failure of Cu viasOates, A. S. / Lin, M.H. et al. | 2009
- 457
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Time and temperature dependence of early stage Stress-Induced-Voiding in Cu/low-k interconnectsCroes, K. / Wilson, C.J. / Lofrano, M. / Travaly, Y. / De Roest, D. / Tokei, Zs. / Beyer, G.P. et al. | 2009
- 464
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Critical ultra low-k TDDB reliability issues for advanced CMOS technologiesChen, F. / Shinosky, M. / Li, B. / Gambino, J. / Mongeon, S. / Pokrinchak, P. / Aitken, J. / Badami, D. / Angyal, M. / Achanta, R. et al. | 2009
- 476
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New perspectives of dielectric breakdown in low-k interconnectsKok-Yong Yiang, / Yao, H. Walter / Marathe, Amit / Aubel, Oliver et al. | 2009
- 481
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Fundamental understanding of porous low-k dielectric breakdownShou-Chung Lee, / Oates, A. S. / Kow-Ming Chang, et al. | 2009
- 486
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Stress-induced leakage current and defect generation in nFETs with HfO2/TiN gate stacks during positive-bias temperature stressCartier, Eduard / Kerber, Andreas et al. | 2009
- 493
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Evidence of a new degradation mechanism in high-k dielectrics at elevated temperaturesSahhaf, S. / Degraeve, R. / O'Connor, R. / Kaczer, B. / Zahid, M.B. / Roussel, Ph.J. / Pantisano, L. / Groeseneken, G. et al. | 2009
- 499
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Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technologyPae, S. / Ghani, T. / Hattendorf, M. / Hicks, J. / Jopling, J. / Maiz, J. / Mistry, K. / O'Donnell, J. / Prasad, C. / Wiedemer, J. et al. | 2009
- 505
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TDDB failure distribution of metal gate/high-k CMOS devices on SOI substratesKerber, A. / Cartier, E. / Linder, B.P. / Krishnan, S.A. / Nigam, T. et al. | 2009
- 510
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The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliabilityLinder, Barry P. / Cartier, Eduard / Krishnan, Siddarth / Stathis, James H. / Kerber, Andreas et al. | 2009
- 514
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Description of Si-O bond breakage using pair-wise interatomic potentials under consideration of the whole crystalTyaginov, S.E. / Gos, W. / Grasser, T. / Sverdlov, V. / Schwaha, Ph. / Heinzl, R. / timpfl, F. S et al. | 2009
- 523
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Accurate model for time-dependent dielectric breakdown of high-k metal gate stacksNigam, T. / Kerber, A. / Peumans, P. et al. | 2009
- 531
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Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperatureBravaix, A. / Guerin, C. / Huard, V. / Roy, D. / Roux, J.M. / Vincent, E. et al. | 2009
- 549
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Repeatability study of an electrothermally actuated micromirrorPal, Sagnik / Xie, Huikai et al. | 2009
- 557
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Thermal behaviour and reliability of solidly mounted Bulk Acoustic Wave Duplexers under high power RF loadsvan der Wel, P.J. / Wunnicke, O. / de Bruijn, F. / Strijbos, R.C. et al. | 2009
- 562
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Reliability characterization of interconnects in CMOS integrated circuits under mechanical stressHillebrecht, Stefan / Polian, Ilia / Becker, Bernd / Ruther, Patrick / Herwik, Stanislav / Paul, Oliver et al. | 2009
- 568
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ESD stress in RF-MEMS capacitive switches: The influence of dielectric material deposition methodRuan, J. / Papaioannou, G.J. / Nolhier, N. / Bafleur, M. / Coccetti, F. / Plana, R. et al. | 2009
- 573
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New on-chip screening of gate oxides smart power devices for automotive applicationsMalandruccolo, Vezio / Ciappa, Mauro / Rothleitner, Hubert / Fichtner, Wolfgang et al. | 2009
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Embedded powerPC 405 & 440-based SoC product qualifications on 45°-rotated substratesNsame, Pascal / Tang, George / Viau, Ernie / Outama, Khambay / Nigussie, Teddy / Dunston, Claude / Sziklas, Edward / Goth, George / Graas, Carole et al. | 2009
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Prediction of Gate Dielectric Breakdown in the CDM timescale utilizing very fast transmission line pulsingEllis, David F. / Malobabic, Slavica / Liou, Juin J. / Hajjar, Jean-Jacques et al. | 2009
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Field effect diode for effective CDM ESD protection in 45 nm SOI technologyCao, Shuqing / Beebe, Stephen G. / Salman, Akram A. / Pelella, Mario M. / Chun, Jung-Hoon / Dutton, Robert W. et al. | 2009
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On the contribution of line-edge roughness to intralevel TDDB lifetime in low-k dielectricsLloyd, J.R. / Liu, X-.H / Bonilla, G. / Shaw, T.M. / Liniger, E. / Lisi, A. et al. | 2009
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Copper line topology impact on the SiOCH low-k reliability in sub 45nm technology node. From the time-dependent dielectric breakdown to the product lifetimeVilmay, M. / Roy, D. / Monget, C. / Volpi, F. / Chaix, J-M. et al. | 2009
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Effect of chemical mechanical polishing scratch on TDDB reliability and its reduction in 45nm BEOL processLiu, W. / Lim, Y.K. / Zhang, F. / Zhang, W.Y. / Chen, C.Q. / Zhang, B.C. / Tan, J.B. / Sohn, D.K. / Hsia, L.C. et al. | 2009
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An efficient approach to quantify the impact of Cu residue on ELK TDDBChang, M.N. / Wang, Robin C.J. / Chiu, C.C. / Wu, Kenneth et al. | 2009
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CMOS device design-in reliability approach in advanced nodesHuard, Vincent / Parthasarathy, CR / Bravaix, Alain / Guerin, Chloe / Pion, Emmanuel et al. | 2009
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Accurate product lifetime predictions based on device-level measurementsNigam, T. / Parameshwaran, B. / Krause, G. et al. | 2009
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Mapping systematic and random process variations using Light emission from Off-State LeakageStellari, Franco / Song, Peilin / Weger, Alan J. / Miles, Darrell L. et al. | 2009
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Experimental study of gate oxide early-life failuresChen, Tze Wee / Kim, Young Moon / Kim, Kyunglok / Kameda, Yoshio / Mizuno, Masayuki / Mitra, Subhasish et al. | 2009
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Breakdown voltage walkout effect in ESD protection devicesLaFonteese, D. J. / Vashchenko, V. A. / Korablev, K. G. et al. | 2009
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A novel ESD protection device structure for HV-MOS ICsImoto, Tsutomu / Mawatari, Kouzou / Wakiyama, Kuniko / Kobayashi, Toshio / Yano, Motoyasu / Shinohara, Mamoru / Kinoshita, Takashi / Ansai, Hisahiro et al. | 2009
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A new physical insight and 3D device modeling of STI type denmos device failure under ESD conditionsShrivastava, Mayank / Schneider, Jens / Baghini, Maryam Shojaei / Gossner, Harald / Rao, V. Ramgopal et al. | 2009
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The mechanism of device damage during bump process for flip-chip packageLee, Jian-Hsing / Shih, J.R. / Tang, Chin-Hsin / Niu, Pao-Kang / Perng, D-J / Lin, Y-T / Su, David / Wu, Kenneth et al. | 2009
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Performanace and reliability analysis of 3D-integration structures employing Through Silicon Via (TSV)Karmarkar, Aditya P. / Xu, Xiaopeng / Moroz, Victor et al. | 2009
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Performance and reliability analysis of 3D-integration structures employing through silicon via (TSV)Karmarkar, A.P. / Xu, Xiaopeng / Moroz, V. et al. | 2009
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Soft breakdown in MgO dielectric layersMiranda, E. / O'Connor, E. / Hughes, G. / Casey, P. / Cherkaoui, K. / Monaghan, S. / Long, R. / O'Connell, D. / Hurley, P.K. et al. | 2009
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Probing the electronic structure of defective oxide: an EELS approachLi, X. / Zhang, G. / Tung, C. H. / Pey, K. L. et al. | 2009
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Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nmLo, V. L. / Pey, K. L. / Ranjan, R. / Tung, C. H. / Shih, J. R. / Wu, Kenneth et al. | 2009
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A new detection method of soft breakdown in ultra-thin gate oxides by light-emission analysisOhgata, K. / Ogasawara, M. / Kawakami, M. / Koyama, T. / Murakami, E. et al. | 2009
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Real-time observation of trap generation by scanning tunneling microscopy and the correlation to high-κ gate stack breakdownOng, Y. C. / Ang, D. S. / Pey, K. L. / O'Shea, S. J. / Kakushima, K. / Kawanago, T. / Iwai, H. / Tung, C. H. et al. | 2009
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Comprehensive physics-based breakdown model for reliability assessment of oxides with thickness ranging from 1 nm up to 12 nmWu, Ernest Y. / Sune, Jordi / Vollertsen, Rolf-Peter et al. | 2009
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Strain induced buffer layer defects in GaN HFETs and their evolution during reliability testingLi, Yinsin / Krishnan, M. / Salemi, S. / Paradee, G. / Christou, A. et al. | 2009
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Physical mechanism of buffer-related lag and current collapse in GaN-based FETs and their reduction by introducing a field plateNakajima, Atsushi / Itagaki, Keiichi / Horio, Kazushige et al. | 2009
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Analysis of degradation induced by silicon nitride InP/InGaAs heterojunction bipolar transistorsSachelarie, Dan et al. | 2009
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False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTsVerzellesi, G. / Faqir, M. / Chini, A. / Fantini, F. / Meneghesso, G. / Zanoni, E. / Danesin, F. / Zanon, F. / Rampazzos, F. / Marino, F.A. et al. | 2009
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Analysis of diffusion involved in degradation of InGaN-based laser diodesOrita, K. / Takigawa, S. / Yuri, M. / Tanaka, T. / Meneghini, M. / Trivellin, N. / Trevisanello, L. -R. / Zanoni, E. / Meneghesso, G. et al. | 2009
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Failure mechanisms in CMOS-based RF switches subjected to RF stressMadan, Anuj / Thrivikraman, Tushar / Cressler, John D. et al. | 2009
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Impact of NBTI and PBTI in SRAM bit-cells: Relative sensitivities and guidelines for application-specific target stability/performanceBansal, Aditya / Rao, Rahul / Kim, Jae-Joon / Zafar, Sufi / Stathis, James H. / Ching-Te Chuang, et al. | 2009
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Ultra-low-leakage power-rail ESD clamp circuit in nanoscale low-voltage CMOS processPo-Yen Chiu, / Ming-Dou Ker, / Fu-Yi Tsai, / Yeong-Jar Chang, et al. | 2009
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Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protectionShrivastava, Mayank / Schneider, Jens / Baghini, Maryam Shojaei / Gossner, Harald / Rao, V. Ramgopal et al. | 2009
- 760
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Latchup test failure from ESD protection circuit activation beyond ESD stress conditionLin, I-Cheng / Jao, Che-Yuan / Huang, Rei-Fu / Chien, Cheng-Hsing / Chuang, Chien-Hui / Chiang, Chen-Feng / Huang, Bo-Shih et al. | 2009
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Analysis on forward-biased electrostatic-discharge-induced degradation of InP-based buried heterostructure laser diodesIchikawa, Hiroyuki / Matsukawa, Shinji / Hamada, Kotaro / Yamaguchi, Akira / Nakabayashi, Takashi et al. | 2009
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Very fast transient simulation and measurement methodology for ESD technology developmentMalobabic, Slavica / Ellis, David F. / Liou, Juin J. / Salcedo, Javier A. / Hajjar, Jean-Jacques / Yuanzhong Zhou, et al. | 2009
- 777
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Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistorsJen-Chou Tseng, / Jenn-Gwo Hwu, et al. | 2009
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Why is oxide-trap charge-pumping (OTCP) method appropriate for extracting the radiation-induced traps in mosfet?Djezzar, Boualem / Tahi, Hakim / Mokrani, Arezki et al. | 2009
- 785
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Laser measurement techniques for detecting age-related degradation of device radiation responseHorn, Kevin M. et al. | 2009
- 791
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Analysis of radiation-hardening techniques for 6T SRAMs with structured layoutsTorrens, Gabriel / Alorda, Bartomeu / Bota, Sebastia / Segura, Jaume et al. | 2009
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Determination of the electric field distribution within multi-quantum-well light emitting diodes by the use of electron beam induced methodsGeinzer, T. / Heiderhoff, R. / Balk, L. J. et al. | 2009
- 801
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A study bipolar phototransistor action existing in CMOS process triggered by a laser beam used in a C-AFM systemHung-Sung Lin, / Mong-Sheng Wu, / Tsui-Hua Huang, et al. | 2009
- 804
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Reliable and accurate temperature measurement using scanning thermal microscopy with double lock-in amplificationHo, H.W. / Zheng, X.H. / Phang, J.C.H. / Balk, L.J. et al. | 2009
- 808
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Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitorsLieyi Sheng, / Snyder, Eric / Doub, Jason / Berti, Valerie / Kriner, Levi / Glines, Eddie et al. | 2009
- 810
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Addressing IC component Quality and Reliability assurance challengesWen, ShiJie / Morusupalli, Rao R / Hartranft, Marc et al. | 2009
- 814
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TDDB lifetime of asymmetric patterns and its comprehension from percolation theoryMiyazaki, H. / Kodama, D. et al. | 2009
- 819
-
Statistical outlook into the physics of failure for copper low-k intra-metal dielectric breakdownRaghavan, Nagarajan / Prasad, Krishnamachar et al. | 2009
- 825
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The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stressJung, Sung-Yup / Kim, Byoung-Joon / Lee, Nam Yeal / Kim, Baek-Mann / Yeom, Seung Jin / Kwak, Noh Jung / Joo, Young-Chang et al. | 2009
- 828
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Electromigration tests for critical stress and failure mechanism evaluation in Cu/W via/Al hybrid interconnectChoi, Zungsun / Park, Byung-Lyul / Lee, Jong Myeong / Choi, Gil-Heyun / Lee, Hyeon-Deok / Moon, Joo-Tae et al. | 2009
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Process options for improving electromigration performance in 32nm technology and beyondAubel, O. / Hohage, J. / Feustel, F. / Hennesthal, C. / Mayer, U. / Preusse, A. / Nopper, M. / Lehr, M. U. / Boemmels, J. / Wehner, S. et al. | 2009
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Joule heating effects on electromigration in Cu/low-κ interconnectsYokogawa, S. / Kakuhara, Y. / Tsuchiya, H. et al. | 2009
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Effect of multiple via layout on electromigration performance and current density distribution in copper interconnectLin, Mingte / Jou, Nick / Liang, James W. / Su, K. C. et al. | 2009
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A novel test structure to study intrinsic reliability of barrier/low-kZhao, Larry / Tokei, Zsolt / Gischia, Gianni Giai / Pantouvaki, Marianna / Croes, Kristof / Beyer, Gerald et al. | 2009
- 851
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Effects of photoinduced carrier injection on timedependent dielectric breakdownAtkin, J. M. / Laibowitz, R. B. / Heinz, T. F. / Lloyd, J. R. / Shaw, T. M. / Cartier, E. et al. | 2009
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A comprehensive look at PVD scaling to meet the reliability requirements of advanced technologyShaviv, Roey / Gopinath, Sanjay / Marshall, Marcelle / Mountsier, Tom / Dixit, Girish / Jiang, Yu et al. | 2009
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The dynamic thermal behavior of silicided polysilicon under hight current stress eventLee, Jian-Hsing / Shih, J.R. / David-Su, / Wu, Kenneth et al. | 2009
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Temperature scaling of electromigration threshold product in Cu/low-K interconnectsPetitprez, E. / Doyen, L. / Ney, D. et al. | 2009
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Methodology to analyze failure mechanisms of ohmic contacts on MEMS switchesBroue, Adrien / Dhennin, Jeremie / Seguineau, Cedric / Lafontan, Xavier / Dieppedale, Christel / Desmarres, Jean-Michel / Pons, Patrick / Plana, Robert et al. | 2009
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Understanding barrier engineered charge-trapping NAND flash devices with and without high-K dielectricLue, Hang-Ting / Lai, Sheng-Chih / Hsu, Tzu-Hsuan / Du, Pei-Ying / Wang, Szu-Yu / Hsieh, Kuang-Yeu / Liu, Rich / Lu, Chih-Yuan et al. | 2009
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Study of the charge-trapping characteristics of silicon-rich nitride thin films using the gate-sensing and channel-sensing (GSCS) methodLu, Chi-Pin / Hsieh, Jung-Yu / Du, Pei-Ying / Lue, Hang-Ting / Yang, Ling-Wu / Yang, Tahone / Chen, Kuang-Chao / Lu, Chih-Yuan et al. | 2009
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Statistical retention modeling in floating-gate cell: ONO scalingSerov, Andrey / Shin, Dongwan / Kim, Dae Sin / Kim, Taikyung / Lee, Keun-Ho / Park, Young-Kwan / Yoo, Moon-Hyun / Kim, Taehun / Sung, Sug-Kang / Lee, Choong-Ho et al. | 2009
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Cell endurance prediction from a large-area SONOS capacitorLee, C. H. / Tu, W. H. / Gu, S. H. / Wu, C.W. / Lin, S. W. / Yeh, T. H. / Chen, K.F. / Chen, Y. J. / Hsieh, J. Y. / Huang, I. J. et al. | 2009
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Charge loss behavior of manos-type flash memory cell with different levels of charge injectionChang, Man / Jo, Minseok / Hasan, Musarrat / Kim, Seonghyun / Ju, Yongkyu / Jung, Seungjae / Choi, Hyejung / Hwang, Hyunsang et al. | 2009
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A statistical model of erratic erase based on an automated random telegraph signal characterization techniqueChimenton, A. / Zambelli, C. / Olivo, P. et al. | 2009
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Indications for an ideal interface structure of oxynitride tunnel dielectricsLiu, Ziyuan / Ito, Shuu / Ide, Takashi / Nakata, Masashi / Ishigaki, Hirokazu / Makabe, Mariko / Wilde, Markus / Fukutani, Katsuyuki / Mitoh, Hiroyuki / Kamigaki, Yoshiaki et al. | 2009
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Post-cycling data retention failure in multilevel nor flash memory with nitrided tunnel-oxideLee, Wook H. / Hur, Chang-Hyun / Lee, Hyun-Min / Yoo, Hwanbae / Lee, Sang-Eun / Lee, Bong-Yong / Park, Chankwang / Kim, Kijoon et al. | 2009
- 909
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Critical thermal issues in nanoscale IC designJiang, Lei / Pantuso, Daniel / Sverdrup, Per G. / Shih, Wei-kai et al. | 2009
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Investigation of chip-package interaction-looking for more acceleration in product qualification testsKanert, Werner / Pufall, Reinhard et al. | 2009
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Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressorKim, Jae Chul / Lee, Kyong Taek / Song, Seung Hyun / Park, Min Sang / Hong, Seung Ho / Choi, Gil Bok / Choi, Hyun Sik / Baek, Rock Hyun / Sagong, Hyun Chul / Jeong, Yoon-Ha et al. | 2009
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The role of nitrogen in HfSiON defect passivationO'Connor, R. / Aoulaiche, M. / Pantisano, L. / Shickova, A. / Degraeve, R. / Kaczer, B. / Groeseneken, G. et al. | 2009
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Soft error rate cross-technology prediction on embedded DRAMYi-Pin Fang, / Vaidyanathan, Balaji / Oates, Anthony S. et al. | 2009
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ANITA — a new neutron facility for accelerated SEE testing at the svedberg laboratoryProkofiev, Alexander V. / Blomgren, Jan / Platt, Simon P. / Nolte, Ralf / Rottger, Stefan / Smirnov, Andrey N. et al. | 2009
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Role of the deep parasitic bipolar device in mitigating the single event transient phenomenonMikami, Nobukazu / Nakauchi, Takuya / Oyama, Akira / Kobayashi, Hajime / Usui, Hiroki et al. | 2009
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Proposal for a new integrated circuit and electronics neutron experiment source at oak ridge national laboratoryDominik, Laura / Normand, Eugene / Dion, Michael J. / Ferguson, Phillip et al. | 2009
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Correlation of soft error rates between mono-energetic and full spectrum beams on a 90nm SRAM technologyPatel, Nayan B / Puchner, Helmut et al. | 2009
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A new dedicated neutron facility for accelerated SEE testing at the ISIS facilityFrost, Christopher D / Ansell, Stuart / Gorini, Giuseppe et al. | 2009
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The correlation between trap states and mechanical reliability of amorphous Si:H TFTs for flexible electronicsLee, M. H. / Chang, S. T. / Weng, S.-C. / Liu, W.-H. / Chen, K.-J. / Ho, K.-Y. / Liao, M. H. / Huang, J.-J. / Hu, G.-R. et al. | 2009
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Comparison of device degradation of n-type metal-induced laterally crystallized poly-Si TFTs with or without hydrogenationWang, Mingxiang / Hu, Chunfeng / Zhou, Yan / Xu, Meijuan et al. | 2009
- 964
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Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methodsLiu, W. J. / Huang, D. / Sun, Q.Q. / Liao, C. C. / Zhang, L.F. / Gan, Z.H. / Wong, W. / Li, Ming-Fu et al. | 2009
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Layout dependency of PMOS off current degradation due to off-state stressSeo, Jae Yong / Park, Hong Sik / Lee, Sabina / Kang, Tae hun / Kang, Gu Gwan / Kwak, Byung Heon / Lee, Won Shik et al. | 2009
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Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2Jung, Hyung-Suk / Park, Tae Joo / Kim, Jeong Hwan / Lee, Sang Young / Lee, Joohwi / Oh, Him Chan / Na, Kwang Duck / Park, Jung-Min / Kim, Weon-Hong / Song, Min-Woo et al. | 2009
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Theoretical approach and precise description of PBTI in high-k gate dielectrics based on electron trap in pre-existing and stress-induced defectsShimokawa, Junji / Sato, Motoyuki / Suzuki, Chikashi / Nakamura, Mitsutoshi / Ohji, Yuzuru et al. | 2009
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Negative bias temperature instability of p-channel transistors with diamond-like carbon liner having ultra-high compressive stressLiu, Bin / Tan, Kian-Ming / Yang, Ming-Chu / Yeo, Yee-Chia et al. | 2009
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-
Applying the universal recovery equation for fast wafer level reliability monitoring NBTI assessmentVollertsen, R.-P. / Reisinger, H. / Aresu, S. / Schlunder, C. et al. | 2009
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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instabilityRyan, J.T. / Lenahan, P.M. / Krishnan, A.T. / Krishnan, S. / Campbell, J.P. et al. | 2009
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RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperatureSagong, Hyun Chul / Lee, Kyong Taek / Hong, Seung-Ho / Choi, Hyun-Sik / Choi, Gil-Bok / Baek, Rock-Hyun / Song, Seung-Hyun / Park, Min-Sang / Kim, Jae Chul / Jeong, Yoon-Ha et al. | 2009
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Asymmetry of RTS characteristics along source-drain direction and statistical analysis of process-induced RTSAbe, Kenichi / Kumagai, Yuki / Sugawa, Shigetoshi / Watabe, Shunichi / Fujisawa, Takafumi / Teramoto, Akinobu / Ohmi, Tadahiro et al. | 2009
- 1002
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Observation of two gate stress voltage dependence of NBTI induced threshold voltage shift of ultra-thin oxynitride gate p-MOSFETTeo, Z. Q. / Ang, D. S. / Du, G. A. et al. | 2009
- 1005
-
A new fast switching NBTI characterization method that determines subthreshold slope degradation during stressBrisbin, D. / Chaparala, P. et al. | 2009
- 1011
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Investigation of Plasma Charging damage impact on device and gate dielectric reliability in 180nm SOI CMOS RF switch technologyIoannou, D.P. / Harmon, D. / Abadeer, W. et al. | 2009
- 1014
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Positive and negative bias temperature instability in La2O3 and Al2O3 capped high-k MOSFETsAoulaiche, M. / Kaczer, B. / Cho, M. / Houssa, M. / Degraeve, R. / Kauerauf, T. / Akheyar, A. / Schram, T. / Roussel, Ph. / Maes, H.E. et al. | 2009
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Effect of mechanical strain on the NBTI of short-channel p-MOSFETS: Role of impactionizationTeo, Z. Q. / Ang, D. S. / See, K. S. / Yang, P. Z. et al. | 2009
- 1023
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Frequency and recovery effects in high-κ BTI degradationRamey, Stephen / Prasad, Chetan / Agostinelli, Marty / Pae, Sangwoo / Walstra, Steven / Gupta, Satrajit / Hicks, Jeffrey et al. | 2009
- 1028
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New insights into the wide ID range channel hot-carrier degradation in high-k based devicesAmat, E. / Rodriguez, R. / Nafria, M. / Aymerich, X. / Kauerauf, T. / Degraeve, R. / Groeseneken, G. et al. | 2009
- 1033
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Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement techniqueHehenberger, Ph. / Aichinger, Th. / Grasser, T. / Gos, W. / Triebl, O. / Kaczer, B. / Nelhiebel, M. et al. | 2009