$0.63\ \mathrm{m}\Omega \text{cm}^{2}$ / 1170 V 4H-SiC Super Junction V-Groove Trench MOSFET (Englisch)
- Neue Suche nach: Masuda, T.
- Neue Suche nach: Saito, Y.
- Neue Suche nach: Kumazawa, T.
- Neue Suche nach: Hatayama, T.
- Neue Suche nach: Harada, S.
- Neue Suche nach: Masuda, T.
- Neue Suche nach: Saito, Y.
- Neue Suche nach: Kumazawa, T.
- Neue Suche nach: Hatayama, T.
- Neue Suche nach: Harada, S.
In:
2018 IEEE International Electron Devices Meeting (IEDM)
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8.1.1-8.1.4
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2018
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:$0.63\ \mathrm{m}\Omega \text{cm}^{2}$ / 1170 V 4H-SiC Super Junction V-Groove Trench MOSFET
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Beteiligte:Masuda, T. ( Autor:in ) / Saito, Y. ( Autor:in ) / Kumazawa, T. ( Autor:in ) / Hatayama, T. ( Autor:in ) / Harada, S. ( Autor:in )
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Erschienen in:2018 IEEE International Electron Devices Meeting (IEDM) ; 8.1.1-8.1.4
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.12.2018
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Format / Umfang:661936 byte
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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[Copyright notice]| 2018
- 1
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Executive Committee| 2018
- 1
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Award Presentations| 2018
- 1
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Welcome from the General Chair| 2018
- 1.1.1
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4th Industrial Revolution and Boundry: Challenges and OpportunitiesJung, ES et al. | 2018
- 1.2.1
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Venturing Electronics into Unknown GroundsFettweis, G. / Leo, K. / Voit, B. / Schneider, U. / Scheuvens, L. et al. | 2018
- 1.3.1
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Future Computing Hardware for AIWelser, J. / Pitera, J. W. / Goldberg, C. et al. | 2018
- 2.1.1
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Scaling Trends in NAND FlashParat, K. / Goda, A. et al. | 2018
- 2.2.1
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Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memoryLu, C.C. / Cheng, C. C. / Chiu, H.P. / Lin, W.L. / Chen, T.W. / Ku, S.H. / Tsai, Wen-Jer / Lu, T.C. / Chen, K.C. / Wang, Tahui et al. | 2018
- 2.3.1
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Implementing Spike-Timing-Dependent Plasticity and Unsupervised Learning in a Mainstream NOR Flash Memory ArrayMalavena, G. / Spinelli, A. S. / Compagnoni, C. Monzio et al. | 2018
- 2.4.1
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A Novel Voltage-Accumulation Vector-Matrix Multiplication Architecture Using Resistor-shunted Floating Gate Flash Memory Device for Low-power and High-density Neural Network ApplicationsLin, Yu-Yu / Lee, Feng-Min / Lee, Ming-Hsiu / Chen, Wei-Chen / Lung, Hsiang-Lan / Wang, Keh-Chung / Lu, Chih-Yuan et al. | 2018
- 2.5.1
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Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power MemoryFlorent, K. / Pesic, M. / Subirats, A. / Banerjee, K. / Lavizzari, S. / Arreghini, A. / Di Piazza, L. / Potoms, G. / Sebaai, F. / McMitchell, S. R. C. et al. | 2018
- 2.6.1
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Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching EffectsLuo, Qing / Gong, Tiancheng / Cheng, Yan / Zhang, Qingzhu / Yu, Haoran / Yu, Jie / Ma, Haili / Xu, Xiaoxin / Huang, Kailiang / Zhu, Xi et al. | 2018
- 2.7.1
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High-performance ($\text{EOT} < 0.4\text{nm}$, Jg∼10−7 A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitorPopovici, M. / Belmonte, A. / Oh, H. / Potoms, G. / Meersschaut, J. / Richard, O. / Hody, H. / Van Elshocht, S. / Delhougne, R. / Goux, L. et al. | 2018
- 3.1.1
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Exploiting Hybrid Precision for Training and Inference: A 2T-1FeFET Based Analog Synaptic Weight CellSun, Xiaoyu / Wang, Panni / Ni, Kai / Datta, Suman / Yu, Shimeng et al. | 2018
- 3.2.1
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Analog Computing for Deep Learning: Algorithms, Materials & ArchitecturesHaensch, W. et al. | 2018
- 3.3.1
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Hardware Acceleration of Simulated Annealing of Spin Glass by RRAM Crossbar ArrayShin, Jong Hoon / Jeong, Yeon Joo / Zidan, Mohammed A. / Wang, Qiwen / Lu, Wei D. et al. | 2018
- 3.4.1
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Demonstration of Generative Adversarial Network by Intrinsic Random Noises of Analog RRAM DevicesLin, Yudeng / Wu, Huaqiang / Gao, Bin / Yao, Peng / Wu, Wei / Zhang, Qingtian / Zhang, Xiang / Li, Xinyi / Li, Fuhai / Lu, Jiwu et al. | 2018
- 3.5.1
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Error-Resilient Analog Image Storage and Compression with Analog-Valued RRAM Arrays: An Adaptive Joint Source-Channel Coding ApproachZheng, Xin / Zarcone, Ryan / Paiton, Dylan / Sohn, Joon / Wan, Weier / Olshausen, Bruno / Wong, H. -S. Philip et al. | 2018
- 4.1.1
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Demonstration of 50-mV Digital Integrated Circuits with Microelectromechanical RelaysYe, Z. A. / Almeida, S. / Rusch, M. / Perlas, A. / Zhang, W. / Sikder, U. / Jeon, J. / Stojanovic, V. / Liu, T.-J. K. et al. | 2018
- 4.2.1
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Highly sensitive spintronic strain-gauge sensor based on magnetic tunnel junction and its application to MEMS microphoneFuji, Yoshihiko / Higashi, Yoshihiro / Kaji, Shiori / Masunishi, Kei / Yuzawa, Akiko / Nagata, Tomohiko / Okamoto, Kazuaki / Baba, Shotaro / Ono, Tomio / Hara, Michiko et al. | 2018
- 4.3.1
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Intermixing of motional currents in suspended CNT-FET based resonatorsKumar, Lalit / Jenni, Laura Vera / Haluska, Miroslav / Roman, Cosmin / Hierold, Christofer et al. | 2018
- 4.4.1
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Glowing Graphene Nanoelectromechanical Resonators at Ultra-High Temperature up to 2650KYe, Fan / Lee, Jaesung / Feng, Philip X.-L. et al. | 2018
- 4.5.1
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Monolithic Integration of Micron-scale Piezoelectric Materials with CMOS for Biomedical ApplicationsShi, C. / Costa, T. / Elloian, J. / Shepard, K. L. et al. | 2018
- 4.6.1
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A Nano-Mechanical Resonator with 10nm Hafnium-Zirconium Oxide Ferroelectric TransducerGhatge, M. / Walters, G. / Nishida, T. / Tabrizian, R. et al. | 2018
- 4.7.1
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Comprehensive optical losses investigation of VLSI Silicon optomechanical ring resonator sensorsSchwab, L. / Allain, P.E. / Banniard, L. / Fafin, A. / Gely, M. / Lemonnier, O. / Grosse, P. / Hermouet, M. / Hentz, S. / Favero, I. et al. | 2018
- 5.1.1
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Interconnect Design and Technology Optimization for Conventional and Emerging Nanoscale Devices: A Physical Design PerspectivePrasad, D. / Naeemi, A. et al. | 2018
- 5.2.1
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Mechanisms of Electromigration Damage in Cu InterconnectsHu, C.-K. / Gignac, L. / Lian, G. / Cabral, C. / Motoyama, K. / Shobha, H. / Demarest, J. / Ostrovski, Y. / Breslin, C. M. / Ali, M. et al. | 2018
- 5.3.1
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Interconnect metals beyond copper: reliability challenges and opportunitiesCroes, K. / Adelmann, Ch. / Wilson, C.J. / Zahedmanesh, H. / Pedreira, O. Varela / Wu, C. / Lesniewska, A. / Oprins, H. / Beyne, S. / Ciofi, I. et al. | 2018
- 5.4.1
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Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and BeyondHu, Szu-Tung / Cao, Linjun / Spinella, Laura / Ho, Paul S. et al. | 2018
- 5.5.1
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Integrating Graphene into Future Generations of Interconnect WiresLi, Ling / Wong, H.-S. Philip et al. | 2018
- 5.6.1
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Interconnect Trend for Single Digit NodesNaik, Mehul et al. | 2018
- 6.1.1
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Device challenges for near term superconducting quantum processors: frequency collisionsBrink, Markus / Chow, Jerry M. / Hertzberg, Jared / Magesan, Easwar / Rosenblatt, Sami et al. | 2018
- 6.2.1
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Scalable quantum computing with ion-implanted dopant atoms in siliconMorello, A. / Tosi, G. / Mohiyaddin, F.A. / Schmitt, V. / Mourik, V. / Botzem, T. / Laucht, A. / Pla, J.J. / Tenberg, S. / Savytskyy, R. et al. | 2018
- 6.3.1
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Qubit Device Integration Using Advanced Semiconductor Manufacturing Process TechnologyPillarisetty, R. / Thomas, N. / George, H.C. / Singh, K. / Roberts, J. / Lampert, L. / Amin, P. / Watson, T.F. / Zheng, G. / Torres, J. et al. | 2018
- 6.4.1
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Silicon Isotope Technology for Quantum ComputingMiyamoto, Satoru / Itoh, Kohei M. et al. | 2018
- 6.5.1
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Towards scalable silicon quantum computingVinet, M. / Hutin, L. / Bertrand, B. / Barraud, S. / Hartmann, J.-M. / Kim, Y.-J. / Mazzocchi, V. / Amisse, A. / Bohuslavskyi, H. / Bourdet, L. et al. | 2018
- 6.6.1
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Majorana QubitsKouwenhoven, Leo et al. | 2018
- 7.1.1
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First Demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafersVandooren, A. / Franco, J. / Wu, Z. / Parvais, B. / Li, W. / Witters, L. / Walke, A. / Peng, L. / Deshpande, V. / Rassoul, N. et al. | 2018
- 7.2.1
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Breakthroughs in 3D Sequential technologyBrunet, L. / Fenouillet-Beranger, C. / Batude, P. / Beaurepaire, S. / Ponthenier, F. / Rambal, N. / Mazzocchi, V. / Pin, J-B. / Acosta-Alba, P. / Kerdiles, S. et al. | 2018
- 7.3.1
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Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustnessJourdon, J. / Lhostis, S. / Moreau, S. / Chossat, J. / Arnoux, M. / Sart, C. / Henrion, Y. / Lamontagne, P. / Arnaud, L. / Bresson, N. et al. | 2018
- 7.4.1
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Embedded Select in Trench Memory (eSTM), best in class 40nm floating gate based cell: a process integration challengeNiel, S. / Rosa, F. La / Regnier, A. / Mantelli, M. / Trenteseaux, F. / Ghezzi, G. / Marzaki, A. / Hubert, Q. / Delalleau, J. / Cabout, T. et al. | 2018
- 7.5.1
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Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Novel Sub-Monolayer Doping TechniqueYamaguchi, T. / Zhang, T. / Omori, K. / Shimada, Y. / Kunimune, Y. / Ide, T. / Inoue, M. / Matsuura, M. et al. | 2018
- 7.6.1
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Interface Dipole Modulation in HfO2/SiO2 MOS Stack StructuresMiyata, Noriyuki / Nara, Jun / Yamasaki, Takahiro / Sumita, Kyoko / Sano, Ryousuke / Nohira, Hiroshi et al. | 2018
- 7.7.1
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Ge-based Non-Volatile Logic-Memory Hybrid Devices for NAND Memory ApplicationWei, Na / Chen, Bing / Zheng, Zejie / Cai, Zhimei / Zhang, Rui / Cheng, Ran / Lee, Shiuh-Wuu / Zhao, Yi et al. | 2018
- 8.1.1
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$0.63\ \mathrm{m}\Omega \text{cm}^{2}$ / 1170 V 4H-SiC Super Junction V-Groove Trench MOSFETMasuda, T. / Saito, Y. / Kumazawa, T. / Hatayama, T. / Harada, S. et al. | 2018
- 8.2.1
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First Demonstration of Dynamic Characteristics for SiC Superjunction MOSFET Realized using Multi-epitaxial Growth MethodHarada, S. / Kobayashi, Y. / Kyogoku, S. / Morimoto, T. / Tanaka, T. / Takei, M. / Okumura, H. et al. | 2018
- 8.3.1
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Channel engineering of 4H-SiC MOSFETs using sulphur as a deep level donorNoguchi, M. / Iwamatsu, T. / Amishiro, H. / Watanabe, H. / Kita, K. / Miura, N. et al. | 2018
- 8.4.1
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Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching LossSaraya, T. / Itou, K. / Takakura, T. / Fukui, M. / Suzuki, S. / Takeuchi, K. / Tsukuda, M. / Numasawa, Y. / Satoh, K. / Matsudai, T. et al. | 2018
- 8.5.1
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2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage currentLi, Wenshen / Hu, Zongyang / Nomoto, Kazuki / Jinno, Riena / Zhang, Zexuan / Tu, Thieu Quang / Sasaki, Kohei / Kuramata, Akito / Jena, Debdeep / Xing, Huili Grace et al. | 2018
- 9.1.1
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Multidomain Dynamics of Ferroelectric Polarization and its Coherency-Breaking in Negative Capacitance Field-Effect TransistorsOta, Hiroyuki / Ikegami, Tsutomu / Fukuda, Koichi / Hattori, Junichi / Asai, Hidehiro / Endo, Kazuhiko / Migita, Shinji / Toriumi, Akira et al. | 2018
- 9.2.1
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Modeling of Multi-domain Switching in Ferroelectric Materials: Application to Negative Capacitance FETsDasgupta, A. / Rastogi, P. / Saha, D. / Gaidhane, A. / Agarwal, A. / Chauhan, Y. S. et al. | 2018
- 9.3.1
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On the Microscopic Origin of Negative Capacitance in Ferroelectric Materials: A Toy ModelKhan, Asif Islam et al. | 2018
- 9.4.1
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Effect of Polycrystallinity and Presence of Dielectric Phases on NC-FinFET VariabilityLin, Yen-Kai / Kao, Ming-Yen / Agarwal, Harshit / Liao, Yu-Hung / Kushwaha, Pragya / Chatterjee, Korok / Duarte, Juan Pablo / Chang, Huan-Lin / Salahuddin, Sayeef / Hu, Chenming et al. | 2018
- 9.5.1
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A simulation based study of NC-FETs design: off-state versus on-state perspectiveRollo, T. / Wang, H. / Han, G. / Esseni, D. et al. | 2018
- 10.1.1
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$1.5\mu \mathrm{m}$ Dual Conversion Gain, Backside Illuminated Image Sensor Using Stacked Pixel Level Connections with 13ke-Full-Well Capacitance and 0.8e-NoiseVenezia, Vincent C. / Hsiung, Alan Chih-Wei / Ai, Kelvin / Zhao, Xiang / Lin, Zhiqiang / Mao, Duli / Yazdani, Armin / Webster, Eric A. G. / Grant, Lindsay A. et al. | 2018
- 10.2.1
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A 0.68e-rms Random-Noise 121dB Dynamic-Range Sub-pixel architecture CMOS Image Sensor with LED Flicker MitigationIida, S. / Sakano, Y. / Asatsuma, T. / Takami, M. / Yoshiba, I. / Ohba, N. / Mizuno, H. / Oka, T. / Yamaguchi, K. / Suzuki, A. et al. | 2018
- 10.3.1
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A 24.3Me− Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption ImagingMurata, M. / Kuroda, R. / Fujihara, Y. / Aoyagi, Y. / Shibata, H. / Shibaguchi, T. / Kamata, Y. / Miura, N. / Kuriyama, N. / Sugawa, S. et al. | 2018
- 10.4.1
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A HDR 98dB $3.2\mu \mathrm{m}$ Charge Domain Global Shutter CMOS Image SensorTournier, A. / Roy, F. / Cazaux, Y. / Lalanne, F. / Malinge, P. / Mcdonald, M. / Monnot, G. / Roux, N. et al. | 2018
- 10.5.1
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High Performance 2.5um Global Shutter Pixel with New Designed Light-Pipe StructureYokoyama, Toshifumi / Tsutsui, Masafumi / Nishi, Yoshiaki / Mizuno, Ikuo / Dmitry, Veinger / Lahav, Assaf et al. | 2018
- 10.6.1
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Back-Illuminated $2.74 \ \mu \mathrm{m}$-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e-Saturation SignalKumagai, Y. / Yoshita, R. / Osawa, N. / Ikeda, H. / Yamashita, K. / Abe, T. / Kudo, S. / Yamane, J. / Idekoba, T. / Noudo, S. et al. | 2018
- 11.1.1
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Conformal, Wafer-Scale and Controlled Nanoscale Doping of Semiconductors Via the iCVD ProcessKim, Jae Hwan / Park, Hong Keun / Pak, Kwan Yong / Yoon, Alexander / Kim, Yun Sang / Im, Sung Gap / Hwang, Wan Sik / Cho, Byung Jin et al. | 2018
- 11.2.1
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Low Temperature Sputtered Graphenic Carbon Enables Highly Reliable Contacts to SiliconStelzer, M. / Jung, M. / Wurstbauer, U. / Holleitner, A.W. / Kreupl, F. et al. | 2018
- 11.3.1
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Location-controlled-grain Technique for Monolithic 3D BEOL FinFET CircuitsYang, Chih-Chao / Hsieh, Tung-Ying / Huang, Po-Tsang / Chen, Kuan-Neng / Wu, Wan-Chi / Chen, Shih-Wei / Chang, Chia-He / Shen, Chang-Hong / Shieh, Jia-Min / Hu, Chenming et al. | 2018
- 11.4.1
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Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS TechnologyBao, Ruqiang / Hung, Steven / Wang, Miaomiao / Chung, Kisup / Barman, Soumendra / Krishnan, Siddarth A / Yang, Yixiong / Tang, Wei / Li, Luping / Lin, Yongjing et al. | 2018
- 11.5.1
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Why GeO2 growth on Ge is suppressed and GeO2/Ge stack is much improved in high pressure O2 oxidation?Wang, Xu / Toriumi, Akira et al. | 2018
- 11.6.1
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EUV Lithography at Threshold of High-Volume Manufacturing*Yen, Anthony / Meiling, Hans / Benschop, Jos et al. | 2018
- 11.7.1
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Half pitch 14 nm direct pattering with Nanoimprint lithographyNakasugi, T. / Kono, T. / Fukuhara, K. / Hatano, M. / Tokue, H. / Komori, M. / Tsuda, H. / Komukai, T. / Takahata, K. / Kato, H. et al. | 2018
- 12.1.1
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All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensingZhang, J.-R. / Rupakula, M. / Bellando, F. / Cordero, E. Garcia / Longo, J. / Wildhaber, F. / Herment, G. / Guerin, H. / Ionescu, A.M. et al. | 2018
- 12.2.1
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High Resolution Ion Detector (HRID) by 16nm FinFET CMOS TechnologyLiou, Peng-Chun / Lee, Tsung-Han / Wang, Chien-Ping / Chueh, Yu-Lun / Chih, Yue-Der / Chang, Jonathan / Lin, Chrong Jung / King, Ya-Chin et al. | 2018
- 12.3.1
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Highly Performant Integrated pH-Sensor Using the Gate Protection Diode in the BEOL of Industrial FDSOIAyele, G. T. / Monfray, S. / Ecoffey, S. / Boeuf, F. / Cloarec, J-P. / Drouin, D. / Souifi, A. et al. | 2018
- 12.4.1
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Very Large Scale Integration Optomechanics: a cure for loneliness of NEMS resonators?Hermouet, Maxime / Sansa, Marc / Defoort, Martial / Banniard, Louise / Dominauez-Medina, Sergio / Fostner, Shawn / Palanchoke, Ujwol / Fafin, Alexandre / Gely, Marc / Hutin, Louis et al. | 2018
- 12.5.1
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SiC-FET-type NOx Sensor for High-Temperature Exhaust GasSasago, Y. / Nakamura, H. / Odaka, T. / Isobe, A. / Komatsu, S. / Nakamura, Y. / Yamawaki, T. / Yorita, C. / Ushifusa, N. / Yoshikawa, K. et al. | 2018
- 12.6.1
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A Si FET-type Gas Sensor with Pulse-driven Localized Micro-heater for Low Power ConsumptionHong, Yoonki / Hong, Seongbin / Jang, Dongkyu / Jeong, Yujeong / Wu, Meile / Jung, Gyuweon / Bae, Jong-Ho / Kim, Jun Shik / Chang, Ki Soo / Jeong, Chan Bae et al. | 2018
- 13.1.1
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ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic ComputingTang, Jianshi / Bishop, Douglas / Kim, Seyoung / Copel, Matt / Gokmen, Tayfun / Todorov, Teodor / Shin, SangHoon / Lee, Ko-Tao / Solomon, Paul / Chan, Kevin et al. | 2018
- 13.2.1
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SoC Logic Compatible Multi-Bit FeMFET Weight Cell for Neuromorphic ApplicationsNi, K. / Smith, J. A. / Grisafe, B. / Rakshit, T. / Obradovic, B. / Kittl, J. A. / Rodder, M. / Datta, S. et al. | 2018
- 13.3.1
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Experimental Demonstration of Ferroelectric Spiking Neurons for Unsupervised ClusteringWang, Zheng / Crafton, Brian / Gomez, Jorge / Xu, Ruijuan / Luo, Aileen / Krivokapic, Zoran / Martin, Lane / Datta, Suman / Raychowdhury, Arijit / Khan, Asif Islam et al. | 2018
- 13.4.1
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Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below $\mathrm{V}_{\text{DD}}=400\text{mV}$Saeidi, Ali / Verhulst, Anne S. / Stolichnov, Igor / Alian, Alireza / Iwai, Hiroshi / Collaert, Nadine / Ionescu, Adrian M. et al. | 2018
- 13.5.1
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An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10KRosca, T. / Saeidi, A. / Memisevic, E. / Wernersson, L-E. / Ionescu, A.M. et al. | 2018
- 13.6.1
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High thermal tolerance of 25-nm c-axis aligned crystalline In-Ga-Zn oxide FETKunitake, Hitoshi / Ohshima, Kazuaki / Tsuda, Kazuki / Matsumoto, Noriko / Sawai, Hiromi / Yanagisawa, Yuichi / Saga, Shiori / Arasawa, Ryo / Seki, Takako / Tokumaru, Ryo et al. | 2018
- 14.1.1
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Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET TechnologyLee, H.-J. / Rami, S. / Ravikumar, S. / Neeli, V. / Phoa, K. / Sell, B. / Zhang, Y. et al. | 2018
- 14.2.1
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GaN HEMTs for 5G Base Station ApplicationsNakajima, Shigeru et al. | 2018
- 14.3.1
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100-340GHz Systems: Transistors and ApplicationsRodwell, M.J.W. / Fang, Y. / Rode, J. / Wu, J. / Markman, B. / Suran Brunelli, S. T. / Klamkin, J. / Urteaga, M et al. | 2018
- 14.4.1
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Considerations on Design of Highly-Integrated Millimeter-Wave Transceivers in SiGe HBTIssakov, V. / Trotta, S. et al. | 2018
- 14.5.1
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BAW Filters for 5G BandsAigner, R. / Fattinger, G. / Schaefer, M. / Karnati, K. / Rothemund, R. / Dumont, F. et al. | 2018
- 14.6.1
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Tunable Filter Technologies for 5G CommunicationsPeroulis, Dimitrios et al. | 2018
- 15.1.1
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Ultra-Low Power 3D NC-FinFET-based Monolithic 3D+ -IC with Computing-in-Memory for Intelligent IoT DevicesHsueh, Fu-Kuo / Chen, Wei-Hao / Li, Kai-Shin / Shen, Chang-Hong / Shieh, Jia-Min / Lee, Chun Ying / Chen, Bo-Yuan / Chen, Hsiu-Chih / Yang, Chih-Chao / Huang, Wen-Hsien et al. | 2018
- 15.2.1
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First Demonstration of Ge Ferroelectric Nanowire FET as Synaptic Device for Online Learning in Neural Network with High Number of Conductance State and Gmax/GminChung, Wonil / Si, Mengwei / Ye, Peide D. et al. | 2018
- 15.3.1
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STT-MRAM Design Technology Co-optimization for Hardware Neural NetworksXu, Nuo / Lu, Yang / Qi, Weiyi / Jiang, Zhengping / Peng, Xiaochen / Chen, Fan / Wang, Jing / Choi, Woosung / Yu, Shimeng / Kim, Dae Sin et al. | 2018
- 15.4.1
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A 68 Parallel Row Access Neuromorphic Core with 22K Multi-Level Synapses Based on Logic-Compatible Embedded Flash Memory TechnologyKim, M. / Kim, J. / Park, C. / Everson, L. / Kim, H. / Song, S. / Lee, S. / Kim, C. H. et al. | 2018
- 15.5.1
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Interchangeable Hebbian and Anti-Hebbian STDP Applied to Supervised Learning in Spiking Neural NetworkChang, Che-Chia / Chen, Pin-Chun / Hudec, Boris / Liu, Po-Tsun / Hou, Tuo-Hung et al. | 2018
- 15.6.1
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Stochastic Inference and Learning Enabled by Magnetic Tunnel JunctionsSengupta, Abhronil / Srinivasan, Gopalakrishnan / Roy, Deboleena / Roy, Kaushik et al. | 2018
- 16.1.1
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In-Memory Computing Primitive for Sensor Data Fusion in 28 nm HKMG FeFET TechnologyNi, K. / Grisafe, B. / Chakraborty, W. / Saha, A. K. / Dutta, S. / Jerry, M. / Smith, J. A. / Gupta, S. / Datta, S. et al. | 2018
- 16.2.1
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Experimentally Validated, Predictive Monte Carlo Modeling of Ferroelectric Dynamics and VariabilityAlessandri, C. / Pandey, P. / Seabaugh, A. C. et al. | 2018
- 16.3.1
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Scalability Study on Fcrroclcctric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent PotentialMo, Fei / Tagawa, Yusaku / Saraya, Takuya / Hiramoto, Toshiro / Kobayashi, Masaharu et al. | 2018
- 16.4.1
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Role of Oxygen Vacancies in Electric Field Cycling Behaviors of Ferroelectric Hafnium OxideLiu, C. / Liu, F. / Luo, Q. / Huang, P. / Xu, X. X. / Lv, H. B. / Zhao, Y. D. / Liu, X.Y. / Kang, J. F. et al. | 2018
- 16.5.1
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First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf1-xZrxO2 for FEFET ApplicationsClima, Sergiu / McMitchell, S.R.C. / Florent, K. / Nyns, L. / Popovici, M. / Ronchi, N. / Di Piazza, L. / Van Houdt, J. / Pourtois, G. et al. | 2018
- 17.1.1
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Characterization Methodology and Physical Compact Modeling of in-Wafer Global and Local VariabilityPradeep, Krishna / Poiroux, Thierry / Scheer, Patrick / Juge, Andre / Gouget, Gilles / Ghibaudo, Gerard et al. | 2018
- 17.2.1
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Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and CircuitsWang, Runsheng / Guo, Shaofeng / Zhang, Zhe / Wang, Qingxue / Wu, Dehuang / Wang, Joddy / Huang, Ru et al. | 2018
- 17.3.1
-
Comprehensive Study on the “Anomalous” Complex RTN in Advanced Multi-Fin Bulk FinFET TechnologyZhang, Jiayang / Zhang, Zhe / Wang, Rusheng / Sun, Zixuan / Zhang, Zuodong / Guo, Shaofeng / Huang, Ru et al. | 2018
- 17.4.1
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An Unique Methodology to Estimate The Thermal Time Constant and Dynamic Self Heating Impact for Accurate Reliability Evaluation in Advanced FinFET TechnologiesMukhopadhyay, S. / Kundu, A. / Lee, Y.W. / Hsieh, H. D. / Huang, D.S. / Horng, J.J. / Chen, T.H. / Lee, J.H. / Tsai, Y.S. / Lin, C.K. et al. | 2018
- 17.5.1
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7nm FinFET Plasma Charge Recording DeviceTsai, Yi-Pei / Shih, Jiaw-Ren / King, Ya-Chin / Lin, Chrong Jung et al. | 2018
- 17.6.1
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Development of X-ray Photoelectron Spectroscopy under bias and its application to determine band-energies and dipoles in the HKMG stackKumar, Pushpendra / Leroux, Charles / Domengie, Florian / Martinez, Eugenie / Loup, Virginie / Guiheux, Denis / Morand, Yves / Pedini, Jean-Michel / Tabone, Claude / Gaillard, Frederic et al. | 2018
- 17.7.1
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In-situ Investigation of the Impact of Externally Applied Vertical Stress on III-V Bipolar TransistorLiu, Y. / Hiblot, G. / Gonzalez, M. / Vanstreels, K. / Velenis, D. / Badaroglu, M. / Van der Plas, G. / De Wolf, I. et al. | 2018
- 18.1.1
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MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET TechnologyGolonzka, O. / Alzate, J. -G. / Arslan, U. / Bohr, M. / Bai, P. / Brockman, J. / Buford, B. / Connor, C. / Das, N. / Doyle, B. et al. | 2018
- 18.2.1
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Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm LogicSong, Y. J. / Lee, J. H. / Han, S. H. / Shin, H. C. / Lee, K. H. / Suh, K. / Jeong, D. E. / Koh, G. H. / Oh, S. C. / Park, J. H. et al. | 2018
- 18.3.1
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Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm nodeSakhare, S. / Perumkunnil, M. / Bao, T. Huynh / Rao, S. / Kim, W. / Crotti, D. / Yasin, F. / Couet, S. / Swerts, J. / Kundu, S. et al. | 2018
- 18.4.1
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Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change MemoryArnaud, F. / Zuliani, P. / Reynard, J.P. / Gandolfo, A. / Disegni, F. / Mattavelli, P. / Gomiero, E. / Samanni, G. / Jahan, C. / Berthelon, R. et al. | 2018
- 18.5.1
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A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV deviceRichter, R. / Trentzsch, M. / Dunkel, S. / Muller, J. / Moll, P. / Bayha, B. / Mothes, K. / Henke, A. / Mazur, M. / Paul, J. et al. | 2018
- 18.6.1
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A Bi-stable 1- /2-Transistor SRAM in 14 nm FinFET Technology for High Density / High Performance Embedded ApplicationsWidjaja, Yuniarto / Wilson, James / Nguyen, Tu / Han, Jin-Woo / Norwood, Christopher / Maheshwari, Dinesh / Lai, Stefan / Vorenkamp, Pieter / Or-Bach, Zvi / Nishi, Yoshio et al. | 2018
- 19.1.1
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SiC Devices for Mainstream AdoptionFriedrichs, Peter et al. | 2018
- 19.2.1
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The current status and future prospects of SiC high voltage technologyMihaila, A. / Knoll, L. / Bianda, E. / Bellini, M. / Wirths, S. / Alfieri, G. / Kranz, L. / Canales, F. / Rahimo, M. et al. | 2018
- 19.3.1
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Progress in High and Ultrahigh Voltage Silicon Carbide Device TechnologyYonezawa, Y. / Nakayama, K. / Kosugi, R. / Harada, S. / Koseki, K. / Sakamoto, K. / Kimoto, T. / Okumura, H. et al. | 2018
- 19.4.1
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Effects of Basal Plane Dislocations on SiC Power Device ReliabilityStahlbush, R. E. / Mahakik, K. N. A. / Lelis, A. J. / Green, R. et al. | 2018
- 19.5.1
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GaN devices for automotive application and their challenges in adoptionKachi, Tetsu et al. | 2018
- 19.6.1
-
Barriers to the Adoption of Wide-Bandgap Semiconductors for Power ElectronicsKizilyalli, I.C. / Carlson, E.P. / Cunningham, D.W. et al. | 2018
- 19.7.1
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GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and ChallengesParikh, P. / Wu, Y. / Shen, L. / Barr, R. / Chowdhury, S. / Gritters, J. / Yea, S. / Smith, P. / McCarthy, L. / Birkhahn, R. et al. | 2018
- 20.1.1
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40× Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM ChipXu, Xiaoxin / Tai, Lu / Gong, Tiancheng / Yin, Jiahao / Huang, Peng / Yu, Jie / Dong, Da Nian / Luo, Qing / Liu, Jing / Yu, Zhaoan et al. | 2018
- 20.2.1
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Characterizing Endurance Degradation of Incremental Switching in Analog RRAM for Neuromorphic SystemsZhao, Meiran / Wu, Huaqiang / Gao, Bin / Sun, Xiaoyu / Liu, Yuyi / Yao, Peng / Xi, Yue / Li, Xinyi / Zhang, Qingtian / Wang, Kanwen et al. | 2018
- 20.3.1
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In-depth Characterization of Resistive Memory-Based Ternary Content Addressable MemoriesLy, D. R. B. / Giraud, B. / Noel, J-P / Grossi, A. / Castellani, N. / Sassine, G. / Nodin, J-F / Molas, G. / Fenouillet-Beranger, C. / Indiveri, G. et al. | 2018
- 20.4.1
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Mixed-Signal Neuromorphic Inference Accelerators: Recent Results and Future ProspectsBavandpour, M. / Mahmoodi, M.R. / Nili, H. / Bayat, F. Merrikh / Prezioso, M. / Vincent, A. / Strukov, D.B. / Likharev, K.K. et al. | 2018
- 20.5.1
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Temporal sequence learning with a history-sensitive probabilistic learning rule intrinsic to oxygen vacancy-based RRAMDoevenspeck, J. / Degraeve, R. / Fantini, A. / Debacker, P. / Verkest, D. / Lauwereins, R. / Dehaene, W. et al. | 2018
- 20.6.1
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In-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural NetworksBocquet, M. / Hirztlin, T. / Klein, J.-O. / Nowak, E. / Vianello, E. / Portal, J.-M. / Querlioz, D. et al. | 2018
- 20.7.1
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A new hardware implementation approach of BNNs based on nonlinear 2T2R synaptic cellZhou, Z. / Huang, P. / Xiang, Y. C. / Shen, W. S. / Zhao, Y. D. / Feng, Y. L. / Gao, B. / Wu, H. Q. / Qian, H. / Liu, L. F. et al. | 2018
- 21.1.1
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Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETsvan Dal, M.J.H. / Vellianitis, G. / Doornbos, G. / Duriez, B. / Holland, M.C. / Vasen, T. / Afzalian, A. / Chen, E. / Su, S.K. / Chen, T.K. et al. | 2018
- 21.2.1
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Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFETArimura, H. / Eneman, G. / Capogreco, E. / Witters, L. / De Keersgieter, A. / Favia, P. / Porret, C. / Hikavyy, A. / Loo, R. / Bender, H. et al. | 2018
- 21.3.1
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Tunability of Parasitic Channel in Gate-All-Around Stacked NanosheetsBarraud, S. / Previtali, B. / Lapras, V. / Vizioz, C. / Hartmann, J.-M. / Martinie, S. / Lacord, J. / Casse, M. / Dourthe, L. / Loup, V. et al. | 2018
- 21.4.1
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Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applicationsSung, P.-J. / Chang, C.-Y. / Chen, L.-Y. / Kao, K.-H. / Su, C.-J. / Liao, T.-H. / Fang, C.-C. / Wang, C.-J. / Hong, T.-C. / Jao, C.-Y. et al. | 2018
- 21.5.1
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Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance OptimizationRitzenthaler, R. / Mertens, H. / Pena, V. / Santoro, G. / Chasin, A. / Kenis, K. / Devriendt, K. / Mannaert, G. / Dekkers, H. / Dangol, A. et al. | 2018
- 22.1.1
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2D materials: roadmap to CMOS integrationHuyghebaert, C. / Schram, T. / Smets, Q. / Kumar Agarwal, T. / Verreck, D. / Brems, S. / Phommahaxay, A. / Chiappe, D. / El Kazzi, S. / Lockhart de la Rosa, C. et al. | 2018
- 22.2.1
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First Demonstration of WSe2 Based CMOS-SRAMPang, Chin-Sheng / Thakuria, Niharika / Gupta, Sumeet Kumar / Chen, Zhihong et al. | 2018
- 22.3.1
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Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative CapacitanceWang, Jingli / Guo, Xuyun / Yu, Zhihao / Ma, Zichao / Liu, Yanghui / Chan, Masun / Zhu, Ye / Wang, Xinran / Chai, Yang et al. | 2018
- 22.4.1
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Toward High-mobility and Low-power 2D MoS2 Field-effect TransistorsYu, Zhihao / Zhu, Ying / Li, Weisheng / Shi, Yi / Zhang, Gang / Chai, Yang / Wang, Xinran et al. | 2018
- 22.5.1
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3D Monolithic Stacked 1T1R cells using Monolayer MoS2 FET and hBN RRAM Fabricated at Low (150°C) TemperatureWang, Ching-Hua / McClellan, Connor / Shi, Yuanyuan / Zheng, Xin / Chen, Victoria / Lanza, Mario / Pop, Eric / Philip Wong, H.-S. et al. | 2018
- 22.6.1
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Atomristors: Memory Effect in Atomically-thin Sheets and Record RF SwitchesGe, Ruijing / Wu, Xiaohan / Kim, Myungsoo / Chen, Po-An / Shi, Jianping / Choi, Junho / Li, Xiaoqin / Zhang, Yanfeng / Chiang, Meng-Hsueh / Lee, Jack C. et al. | 2018
- 22.7.1
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An Ultra-fast Multi-level MoTe2-based RRAMZhang, F. / Zhang, H. / Shrestha, P.R. / Zhu, Y. / Maize, K. / Krylyuk, S. / Shakouri, A. / Campbell, J.P. / Cheung, K.P. / Bendersky, L.A. et al. | 2018
- 23.1.1
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First cryogenic electro-optic switch on silicon with high bandwidth and low power tunabilityEltes, F. / Barreto, J. / Caimi, D. / Karg, S. / Gentile, A. A. / Hart, A. / Stark, P. / Meier, N. / Thompson, M. G. / Fompeyrine, J. et al. | 2018
- 23.2.1
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High Speed ($\boldsymbol{f}_{3-\boldsymbol{d}\boldsymbol{B}}$ above 10 GHz) Photo Detection at Two-micron-wavelength Realized by GeSn/Ge Multiple-quantum-well Photodiode on a 300 mm Si SubstrateXu, Shengqiang / Wang, Wei / Huang, Yi-Chiau / Dong, Yuan / Masudy-Panah, Saeid / Wang, Hong / Gong, Xiao / Yeo, Yee-Chia et al. | 2018
- 23.3.1
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Quadratic electro-optical silicon-organic hybrid RF modulator in a photonic integrated circuit technologySteglich, P. / Mai, C. / Peczek, A. / Korndorfer, F. / Villringer, C. / Dietzel, B. / Mai, A. et al. | 2018
- 23.4.1
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Silicon Photonics: a Scaling Technology for Communications and InterconnectsDong, P. / Kim, K. W. / Melikyan, A. / Baeyens, Y. et al. | 2018
- 23.5.1
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InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV PlatformLi, Keshuang / Tang, Mingchu / Liao, Mengya / Wu, Jiang / Chen, Siming / Seeds, Alwyn / Liu, Huiyun et al. | 2018
- 23.6.1
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Heterogeneously integrated ligtht sources on bulk-silicon platformShin, Dongjae / Cha, Jungho / Shin, Yonghwack / Ha, Kyoungho / Lee, Chang Bum / Shin, Changgyun / Shim, Dongshik / Choi, Byoung Lyong / Hong, Hyeongsun / Lee, Kyupil et al. | 2018
- 24.1.1
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Interfacial Thermal Conductivity of 2D Layered Materials: An Atomistic ApproachParto, Kamyar / Pal, Arnab / Xie, Xuejun / Cao, Wei / Banerjee, Kaustav et al. | 2018
- 24.2.1
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Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial LayerMa, Xiaolei / Fan, Zhiqiang / Wu, Jixuan / Jiang, Xiangwei / Chen, Jiezhi et al. | 2018
- 24.3.1
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First Principles Study of Memory Selectors using Heterojunctions of 2D Layered MaterialsLi, Linsen / Magyari-Kope, Blanka / Wang, Ching-Hua / Deshmukh, Sanchit / Jiang, Zizhen / Li, Haitong / Yang, Yi / Li, Huanglong / Tian, He / Pop, E. et al. | 2018
- 24.4.1
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Can Kinetic Inductance in Low-Dimensional Materials Enable a New Generation of RF-Electronics?Agashiwala, Kunjesh / Pal, Arnab / Cao, Wei / Jiang, Junkai / Banerjee, Kaustav et al. | 2018
- 24.5.1
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A Surface Potential- and Physics- Based Compact Model for 2D Polycrystalline-MoS2FET with Resistive Switching Behavior in Neuromorphic ComputingWang, Lingfei / Wang, Lin / Ang, Kah-Wee / Thean, Aaron Voon-Yew / Liang, Gengchiau et al. | 2018
- 24.6.1
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Design and Optimization of $\boldsymbol{\beta}$-Ga2O3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package PerspectiveMahajan, Bikram K. / Chen, Yen-Pu / Ahn, Woojin / Zagni, Nicolo / Alam, Muhammad Ashraful et al. | 2018
- 25.1.1
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Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and ReliabilityPesic, Milan / Padovani, Andrea / Slcsazeck, Stefan / Mikolajick, Thomas / Larcher, Luca et al. | 2018
- 25.2.1
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Impact of self-heating on reliability predictions in STT-MRAMVan Beek, S. / O'Sullivan, B. J. / Roussel, P. J. / Degraeve, R. / Bury, E. / Swerts, J. / Couet, S. / Souriau, L. / Kundu, S. / Rao, S. et al. | 2018
- 25.3.1
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Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating ConditionsLim, J.H. / Raghavan, N. / Padovani, A. / Kwon, J.H. / Yamane, K. / Yang, H. / Naik, V.B. / Larcher, L. / Lee, K.H. / Pey, K.L. et al. | 2018
- 25.4.1
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Trap Reduction and Performances Improvements Study after High Pressure Anneal Process on Single Crystal Channel 3D NAND DevicesSubirats, A. / Arreghini, A. / Delhougne, R. / Rosseel, E. / Hikavyy, A. / Breuil, L. / Palayam, S. Vadakupudhu / Van den bosch, G. / Linten, D. / Furnemont, A. et al. | 2018
- 27.1.1
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22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU ApplicationsLee, K. / Chao, R. / Yamane, K. / Naik, V. B. / Yang, H. / Kwon, J. / Chung, N. L. / Jang, S. H. / Behin-Aein, B. / Lim, J.H. et al. | 2018
- 27.2.1
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14ns write speed 128Mb density Embedded STT-MRAM with endurance>1010 and 10yrs retention@85°C using novel low damage MTJ integration processSato, H. / Honjo, H. / Watanabe, T. / Niwa, M. / Koike, H. / Miura, S. / Saito, T. / Inoue, H. / Nasuno, T. / Tanigawa, T. et al. | 2018
- 27.3.1
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STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodesThomas, Luc / Jan, Guenole / Serrano-Guisan, Santiago / Liu, Huanlong / Zhu, Jian / Lee, Yuan-Jen / Le, Son / Iwata-Harms, Jodi / Tong, Ru-Ying / Patel, Sahil et al. | 2018
- 27.4.1
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Microwave Neural Processing and Broadcasting with Spintronic Nano-OscillatorsTalatchian, P. / Romera, M. / Tsunegi, S. / Araujo, F. Abreu / Cros, V. / Bortolotti, P. / Trastoy, J. / Yakushiji, K. / Fukushima, A. / Kubota, H. et al. | 2018
- 27.5.1
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High Endurance Phase Change Memory Chip Implemented based on Carbon-doped Ge2Sb2Te5 in 40 nm Node for Embedded ApplicationSong, Z. T. / Cai, D. L. / Li, X. / Wang, L. / Chen, Y. F. / Chen, H. P. / Wang, Q. / Zhan, Y. P. / Ji, M. H. et al. | 2018
- 27.6.1
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A 40nm Low-Power Logic Compatible Phase Change Memory TechnologyWu, J.Y. / Chen, Y.S. / Khwa, W. S. / Yu, S. M. / Wang, T. Y. / Tseng, J.C. / Chih, Y.D. / Diaz, Carlos H. et al. | 2018
- 27.7.1
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8-bit Precision In-Memory Multiplication with Projected Phase-Change MemoryGiannopoulos, I. / Sebastian, A. / Le Gallo, M. / Jonnalagadda, V.P. / Sousa, M. / Boon, M.N. / Eleftheriou, E. et al. | 2018
- 28.1.1
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System Performance: From Enterprise to AIKumar, A. / Chang, L. / Tellez, G.E. / Clevenger, L.A. / Burns, J.L. et al. | 2018
- 28.2.1
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Design-Technology Co-Optimization of Standard Cell Libraries on Intel 10nm ProcessWang, Xinning / Kumar, Ranjith / Prakash, Somashekar Bangalore / Zheng, Peng / Wu, Tai-Hsuan / Shi, Quan / Nabors, Marni / Gadigatla, Srinivasa Chaitanya / Realov, Simeon / Chen, Chin-Hsuan et al. | 2018
- 28.3.1
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An Accurate FinFET's Vmin Estimation Method for Extreme Low Operation Voltage DesignChoi, H. W. / Kim, S. K. / Jung, H. / Chang, D. R. / Park, S. / Yasuda-Masuoka, Y. / Yoon, J.S. et al. | 2018
- 28.4.1
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Tackling Fundamental Challenges of Carrier Transport and Device Variability in Advanced SinFinFETs for 7nm Node and BeyondLin, Ming-Huei / Chang, Vincent S. / Lu, Jen-Hsiang / Wang, Shu-Hui / Yang, Shyh-Horng et al. | 2018
- 28.5.1
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Extendable and Manufacturable Volume-less Multi-Vt Solution for 7nm Technology Node and BeyondBao, Ruqiang / Zhou, Huimei / Wang, Miaomiao / Guo, Dechao / Haran, Bala S / Narayanan, Vijay / Divakaruni, Rama et al. | 2018
- 28.6.1
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Channel Geometry Impact and Narrow Sheet Effect of Stacked NanosheetYeung, Chun Wing / Zhang, Jingyun / Chao, Robin / Kwon, Ohseong / Vega, Reinaldo / Tsutsui, Gen / Miao, Xin / Zhang, Chen / Sohn, Chang-Woo / Moon, Bum Ki et al. | 2018
- 28.7.1
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3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance ApplicationsBae, Geumjong / Bae, D.-I. / Kang, M. / Hwang, S.M. / Kim, S.S. / Seo, B. / Kwon, T.Y. / Lee, T.J. / Moon, C. / Choi, Y.M. et al. | 2018
- 29.1.1
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A CMOS Proximity Capacitance Image Sensor with $16\mu \mathrm{m}$ Pixel Pitch, 0.1aF Detection Accuracy and 60 Frames Per SecondYamamoto, M. / Kuroda, R. / Suzuki, M. / Goto, T. / Hamori, H. / Murakami, S. / Yasuda, T. / Sugawa, S. et al. | 2018
- 29.2.1
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3D Expandable Microwire Electrode Arrays Made of Programmable Shape Memory MaterialsZhao, Ruoyu / Liu, Xin / Lu, Yichen / Ren, Chi / Mehrsa, Armaghan / Komiyama, Takaki / Kuzum, Duygu et al. | 2018
- 29.3.1
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Bio-inspired 3D neural electrodes for the peripheral nerves stimulation using shape memory polymersZhang, Yingchao / Zheng, Ning / Ma, Yinji / Xie, Tao / Feng, Xue et al. | 2018
- 29.4.1
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Fabrication and Characterization of 3D Multi-Electrode Array on Flexible Substrate for In Vivo EMG Recording from Expiratory Muscle of SongbirdZia, Muneeb / Chung, Bryce / Sober, Samuel J. / Bakir, Muhannad S. et al. | 2018
- 29.5.1
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Bioelectronics at the Single Molecule LevelGul, O. Tolga / Pugliese, Kaitlin M. / Choi, Yongki / Rajapakse, Arith J. / Lau, Calvin J. / Kumar, Narendra / Gabriel, Kristin N. / Marushchak, Denys / Olsen, Tivoli J. / Pan, Deng et al. | 2018
- 29.6.1
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Si Nanowire Biosensors Using a FinFET Fabrication Process for Real Time Monitoring Cellular Ion ActitiviesZhang, Qingzhu / Tu, Hailing / Yin, Huaxiang / Wei, Feng / Zhao, Hongbin / Xue, Chunling / Wei, Qianhui / Zhang, Zhaohao / Zhang, Xiao / Zhang, Shaoming et al. | 2018
- 29.7.1
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A Flexible, Heterogeneously Integrated Wireless Powered System for Bio-Implantable Applications using Fan-Out Wafer-Level PackagingEzhilarasu, G. / Hanna, A. / Irwin, R. / Alam, A. / Iyer, S. S. et al. | 2018
- 30.1.1
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Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel TerminationMaeda, T. / Narita, T. / Ueda, H. / Kanechika, M. / Uesugi, T. / Kachi, T. / Kimoto, T. / Horita, M. / Suda, J. et al. | 2018
- 30.2.1
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Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: study of walkout due to residual carbon concentrationDe Santi, C. / Fabris, E. / Nomoto, K. / Hu, Z. / Li, W. / Gao, X. / Jena, D. / Xing, H. G. / Meneghesso, G. / Meneghini, M. et al. | 2018
- 30.3.1
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Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline $\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}}$ ChannelHua, Mengyuan / Cai, Xiangbin / Yang, Song / Zhang, Zhaofu / Zheng, Zheyang / Wei, Jin / Wang, Ning / Chen, Kevin J. et al. | 2018
- 30.4.1
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Recent advancement of GaN HEMT with InAlGaN barrier layer and future prospects of A1N-based electron devicesKotani, J. / Yamada, A. / Ohki, T. / Minoura, Y. / Ozaki, S. / Okamoto, N. / Makiyama, K. / Nakamura, N. et al. | 2018
- 30.5.1
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Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effectsMeneghini, M. / Barbato, A. / Borga, M. / De Santi, C. / Barbato, M. / Stoffels, S. / Zhao, M. / Posthuma, N. / Decoutere, S. / Haeberlen, O. et al. | 2018
- 31.1.1
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New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETsWang, Huimin / Yang, Mengxuan / Huang, Qianqian / Zhu, Kunkun / Zhao, Yang / Liang, Zhongxin / Chen, Cheng / Wang, Zhixuan / Zhong, Yuan / Zhang, Xing et al. | 2018
- 31.2.1
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A Critical Examination of ‘Quasi-Static Negative Capacitance’ (QSNC) theoryLiu, Z. / Bhuiyan, M. A. / Ma, T. P. et al. | 2018
- 31.3.1
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Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitorLi, Xiuyan / Toriumi, Akira et al. | 2018
- 31.4.1
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Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric-Gate Field-Effect Transistors Caused by Positive Feedback of Polarization ReversalMigita, Shinji / Ota, Hiroyuki / Toriumi, Akira et al. | 2018
- 31.5.1
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Experimental Study on the Role of Polarization Switching in Subthreshold Characteristics of HfO2-based Ferroelectric and Anti-ferroelectric FETJin, Chengji / Jang, Kyungmin / Saraya, Takuya / Hiramoto, Toshiro / Kobayashi, Masaharu et al. | 2018
- 31.6.1
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Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2Hoffmann, M. / Max, B. / Mittmann, T. / Schroeder, U. / Slesazeck, S. / Mikolajick, T. et al. | 2018
- 31.7.1
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Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and FtLi, Kai-Shin / Wei, Yun-Jie / Chen, Yi-Ju / Chiu, Wen-Cheng / Chen, Hsiu-Chih / Lee, Min-Hung / Chiu, Yu-Fan / Hsueh, Fu-Kuo / Wu, Bo-Wei / Chen, Pin-Guang et al. | 2018
- 31.8.1
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Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETsLee, M. H. / Chen, K.-T. / Liao, C.-Y. / Gu, S.-S. / Siang, G.-Y. / Chou, Y.-C. / Chen, H.-Y. / Le, J. / Hong, R.-C. / Wang, Z.-Y. et al. | 2018
- 32.1.1
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Optocoupling in CMOSAgarwal, V. / Dutta, S. / Annema, A. J. / Hueting, R. J. E. / Schmitz, J. / Lee, M.J. / Charbon, E. / Nauta, B. et al. | 2018
- 32.2.1
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High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated ProcessKaklin, F. / Raynor, J. M. / Henderson, R. K. et al. | 2018
- 32.3.1
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Through-silicon-trench in back-side-illuminated CMOS image sensors for the improvement of gate oxide long term performanceVici, A. / Russo, F. / Lovisi, N. / Latessa, L. / Marchioni, A. / Casella, A. / Irrera, F. et al. | 2018
- 32.4.1
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High-Performance Germanium-an-Silicon Lock-in Pixels for Indirect Time-of-Flight ApplicationsNa, N. / Cheng, S.-L. / Liu, H.-D. / Yang, M.-J. / Chen, C.-Y. / Chen, H.-W. / Chou, Y.-T. / Lin, C.-T. / Liu, W.-H. / Liang, C.-F. et al. | 2018
- 32.5.1
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CMOS-Integrated Single-Photon-Counting X-Ray Detector using an Amorphous-Selenium Photoconductor with $11\times 11-\boldsymbol{\mu}\mathbf{m}^{2}$ PixelsCamlica, A. / El-Falou, A. / Mohammadi, R. / Levine, P. M. / Karim, K. S. et al. | 2018
- 33.1.1
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Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devicesPala, Marco G. / Badami, Oves / Esseni, David et al. | 2018
- 33.2.1
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First Principles Simulation of Energy efficient Switching by Source Density of States EngineeringLiu, Fei / Qiu, Chenguang / Zhang, Zhiyong / Peng, Lian-Mao / Wang, Jian / Wu, Zhenhua / Guo, Hong et al. | 2018
- 33.3.1
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Universal Swing Factor Approach For Performance Analysis Of Logic NodesPourghaderi, M. Ali / Pham, Anh-Tuan / Kim, Seungkyu / Chung, Hyein / Jiang, Zhengping / Ilatikhameneh, Hesameddin / Park, Hong-hyun / Jin, Seonghoon / Kim, Jongchol / Chung, Won-Young et al. | 2018
- 33.4.1
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Multi-domain process modeling for advanced logic and memory devices: from equimpments to materialsJang, Inkook / Ko, Hyoungsoo / Schmidt, Alexander / Kim, Sae-Jin / Cha, Moonhyun / Ahn, Hyoshin / Park, Honglae / Kim, Dae Sin / Kang, Ho-Kyu et al. | 2018
- 33.5.1
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Entire Bias Space Statistical Reliability Simulation By 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs based CircuitsChen, Wangyong / Li, Yun / Cai, Linlin / Chang, Pengying / Du, Gang / Liu, Xiaoyan et al. | 2018
- 33.6.1
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A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-designCai, Linlin / Chen, Wangyong / Chang, Pengying / Du, Gang / Zhang, Xing / Kang, Jinfeng / Liu, Xiaoyan et al. | 2018
- 34.1.1
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Understanding the intrinsic reliability behavior of $\boldsymbol{n}$ -/$\boldsymbol{p}$-Si and $\boldsymbol{p}$-Ge nanowire FETs utilizing degradation mapsChasin, Adrian / Bury, Erik / Franco, Jacopo / Kaczer, Ben / Vandemaele, Michiel / Arimura, Hiroaki / Capogreco, Elena / Witters, Liesbeth / Ritzenthaler, Romain / Mertens, Hans et al. | 2018
- 34.2.1
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BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential IntegrationFranco, J. / Wu, Z. / Rzepa, G. / Vandooren, A. / Arimura, H. / Ragnarsson, L. -A / Hellings, G. / Brus, S. / Cott, D. / De Heyn, V. et al. | 2018
- 34.3.1
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Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfacesKe, M. / Cheng, P. / Kato, K. / Takenaka, M. / Takagi, S. et al. | 2018
- 34.4.1
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Soft Error Trends in Advanced Silicon Technology NodesBhuva, B. et al. | 2018
- 34.5.1
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CMOS-Compatible Doped-Multilayer-Graphene Interconnects for Next-Generation VLSIJiang, Junkai / Chu, Jae Hwan / Banerjee, Kaustav et al. | 2018
- 34.6.1
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Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs Under Fast Cyclic Transient StressShankar, Bhawani / Soni, Ankit / Dutta Gupta, Sayak / Shikha, Swati / Singh, Sandeep / Raghavan, Srinivasan / Shrivastava, Mayank et al. | 2018
- 35.1.1
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Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming SiLee, C. H. / Southwick, R. G. / Mochizuki, S. / Li, J. / Miao, X. / Wang, M. / Bao, R. / Ok, I. / Ando, T. / Hashemi, P. et al. | 2018
- 35.2.1
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Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET DevicesMochizuki, S. / Colombeau, B. / Yu, L. / Dube, A. / Choi, S. / Stolfi, M. / Bi, Z. / Chang, F. / Conti, R. A. / Liu, P. et al. | 2018
- 35.3.1
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External Resistance Reduction by Nanosecond Laser Anneal in Si/SiGe CMOS TechnologyGluschenkov, Oleg / Wu, Heng / Brew, Kevin / Niu, Chengyu / Yu, Lan / Sulehria, Yasir / Choi, Samuel / Durfee, Curtis / Demarest, James / Carr, Adra et al. | 2018
- 35.4.1
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Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs Beyond 7nmWu, H. / Gluschenkov, O. / Tsutsui, G. / Niu, C. / Brew, K. / Durfee, C. / Prindle, C. / Kamineni, V. / Mochizuki, S. / Lavoie, C. et al. | 2018
- 35.5.1
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Sub-$10^{-9}\ \Omega-\text{cm}^{2}$ Specific Contact Resistivity on P-type Ge and GeSn: In-situ Ga Doping with Ga Ion Implantation at 300 °C, 25 °C, and −100 °CWu, Ying / Chua, Lye-Hing / Wang, Wei / Han, Kaizhen / Zou, Wei / Henry, Todd / Gong, Xiao et al. | 2018
- 35.6.1
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Selective Fin Trimming after Dummy Gate Removal as the Local Fin Width Scaling Approach for N5 and BeyondMiyashita, Toshihiko / Sun, Shiyu / Mittal, Sushant / Kim, Myung Sun / Pal, Ashish / Sachid, Angada / Pathak, Kalpana / Cogorno, Matt / Kim, Nam Sung et al. | 2018
- 36.1.1
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First experimental demonstration of a scalable linear majority gate based on spin wavesCiubotaru, Florin / Talmelli, Giacomo / Devolder, Thibaut / Zografos, Odysseas / Heyns, Marc / Adelmann, Christoph / Radu, Iuliana P. et al. | 2018
- 36.2.1
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Spintronic devices for low energy dissipationWang, Kang L. / Wu, Hao / Razavi, Seyed Armin / Shao, Qiming et al. | 2018
- 36.3.1
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Room Temperature Highly Efficient Topological Insulator/Mo/CoFeB Spin-Orbit Torque Memory with Perpendicular Magnetic AnisotropyShao, Qiming / Wu, Hao / Pan, Quanjun / Zhang, Peng / Pan, Lei / Wong, Kin / Che, Xiaoyu / Wang, Kang L. et al. | 2018
- 36.4.1
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Scaled spintronic logic device based on domain wall motion in magnetically interconnected tunnel junctionsRaymenants, E. / Wan, D. / Couet, S. / Zografos, O. / Nguyen, V.D. / Vaysset, A. / Souriau, L. / Thiam, A. / Manfrini, M. / Brus, S. et al. | 2018
- 36.5.1
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Binary and Ternary True Random Number Generators Based on Spin Orbit TorqueChen, Huiming / Zhang, Shuai / Xu, Nuo / Song, Min / Li, Xin / Li, Ruofan / Zeng, Yi / Hong, Jeongmin / You, Long et al. | 2018
- 37.1.1
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High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCMKim, Taehoon / Choi, Hyejung / Kim, Myoungsub / Yi, Jaeyun / Kim, Donghoon / Cho, Sunglae / Lee, Hyunmin / Hwang, Changyoun / Hwang, Eung-Rim / Song, Jeongho et al. | 2018
- 37.2.1
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A Highly Efficient and Scalable Model for Crossbar Arrays with Nonlinear SelectorsChen, An et al. | 2018
- 37.3.1
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Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint MemoryCheng, H. Y. / Chien, W. C. / Kuo, I. T. / Yeh, C. W. / Gignac, L. / Kim, W. / Lai, E. K. / Lin, Y. F. / Bruce, R. L. / Lavoie, C. et al. | 2018
- 37.4.1
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Optimized Reading Window for Crossbar Arrays Thanks to Ge-Se-Sb-N-based OTS SelectorsVerdy, A. / Bernard, M. / Garrione, J. / Bourgeois, G. / Cyrille, M. C. / Nolot, E. / Castellani, N. / Noe, P. / Socquet-Clerc, C. / Magis, T. et al. | 2018
- 37.5.1
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Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 1012 cycles), excellent Vth stability (5%), fast (< 10 ns) switching, and promising scaling propertiesHennen, T. / Bedau, D. / Rupp, J. A. J. / Funck, C. / Menzel, S. / Grobis, M. / Waser, R. / Wouters, D. J. et al. | 2018
- 38.1.1
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Fully Multi-Functional GaN-based Micro-LEDs for 2500 PPI Micro-displays, Temperature Sensing, Light Energy Harvesting, and Light DetectionLiu, Zhaojun / Zhang, Ke / Liu, Yibo / Yan, Siwa / Kwok, Hoi Sing / Deen, Jamal / Sun, Xiaowei et al. | 2018
- 38.2.1
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Environmentally Friendly Quantum Dots for Display ApplicationsJang, E. et al. | 2018
- 38.3.1
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Solution Processed High Performance Short Channel Organic Thin-Film Transistors with Excellent Uniformity and Ultra-low Contact Resistance for Logic and DisplayFeng, L. / Huang, Y. / Fan, J. / Zhao, J. / Pandya, S. / Chen, S. / Tang, W. / Ogier, S. / Guo, X. et al. | 2018
- 38.4.1
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Record Static and Dynamic Performance of Flexible Organic Thin-Film TransistorsBorchert, James W. / Zschieschang, Ute / Letzkus, Florian / Giorgio, Michele / Caironi, Mario / Burghartz, Joachim N. / Ludwigs, Sabine / Klauk, Hagen et al. | 2018
- 38.5.1
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Hybrid Structure of Silicon Nanocrystals and 2D WSe2 for Broadband Optoelectronic Synaptic DevicesNi, Zhenyi / Wang, Yue / Liu, Lixiang / Zhao, Shuangyi / Xu, Yang / Pi, Xiaodong / Yang, Deren et al. | 2018
- 38.6.1
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High Performance 2D Perovskite/Graphene Optical Synapses as Artificial EyesTian, He / Wang, Xuefeng / Wu, Fan / Yang, Yi / Ren, Tian-Ling et al. | 2018
- 39.1.1
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First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALDLu, Wenjie / Lee, Younghee / Murdzek, Jessica / Gertsch, Jonas / Vardi, Alon / Kong, Lisa / George, Steven M. / del Alamo, Jesus A. et al. | 2018
- 39.2.1
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InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record PerformanceConvertino, C. / Zota, C. / Sant, S. / Eltes, F. / Sousa, M. / Caimi, D. / Schenk, A. / Czornomaz, L. et al. | 2018
- 39.3.1
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Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on SiJonsson, Adam / Svensson, Johannes / Wemersson, Lars-Erik et al. | 2018
- 39.4.1
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High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF ApplicationsZota, C. B. / Convertino, C. / Baumgartner, Y. / Sousa, M. / Caimi, D. / Czornomaz, L. et al. | 2018
- 39.5.1
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High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective EpitaxyLee, S. / Cheng, C. -W. / Sun, X. / D'Emic, C. / Miyazoe, H. / Frank, M. M. / Lofaro, M. / Bruley, J. / Hashemi, P. / Ott, J. A. et al. | 2018
- 39.6.1
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Scaling Acoustic Filters Towards 5GYang, Yansong / Lu, Ruochen / Gong, Songbin et al. | 2018
- 40.1.1
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Physics of hole trapping process in high-k gate stacks: A direct simulation formalism for the whole interface system combining density-functional theory and Marcus theoryLiu, Yue-Yang / Jiang, Xiangwei et al. | 2018
- 40.2.1
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Parasitic Surface Reactions in High-Aspect Ratio Via Filling using ALD: A Stochastic Kinetic ModelMuneshwar, T. / Shoute, G. / Barlage, D. / Cadien, K. et al. | 2018
- 40.3.1
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Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computingWang, W. / Bricalli, A. / Laudato, M. / Ambrosi, E. / Covi, E. / Ielmini, D. et al. | 2018
- 40.4.1
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Analytic Model for Statistical State Instability and Retention Behaviors of Filamentary Analog RRAM Array and Its Applications in Design of Neural NetworkHuang, P. / Xiang, Y. C. / Zhao, Y. D. / Liu, C. / Gao, B. / Wu, H. Q. / Qian, H. / Liu, X. Y. / Kang, J. F. et al. | 2018
- 40.5.1
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Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin ModelingSankaran, K. / Swerts, J. / Carpenter, R. / Couet, S. / Garello, K. / Evans, R. F. L. / Rao, S. / Kim, W. / Kundu, S. / Crotti, D. et al. | 2018