1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V (Englisch)
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- Neue Suche nach: Wang, Haiyong
- Weitere Informationen zu Wang, Haiyong:
- https://orcid.org/0000-0002-0787-3678
- Neue Suche nach: Mao, Wei
- Neue Suche nach: Zhao, Shenglei
- Weitere Informationen zu Zhao, Shenglei:
- https://orcid.org/0000-0002-1406-1088
- Neue Suche nach: Du, Ming
- Neue Suche nach: Zhang, Yachao
- Weitere Informationen zu Zhang, Yachao:
- https://orcid.org/0000-0003-1864-6953
- Neue Suche nach: Zheng, Xuefeng
- Weitere Informationen zu Zheng, Xuefeng:
- https://orcid.org/0000-0001-9474-047X
- Neue Suche nach: Wang, Chong
- Weitere Informationen zu Wang, Chong:
- https://orcid.org/0000-0002-0787-3678
- Neue Suche nach: Zhang, Chunfu
- Weitere Informationen zu Zhang, Chunfu:
- https://orcid.org/0000-0001-9555-3377
- Neue Suche nach: Zhang, Jincheng
- Weitere Informationen zu Zhang, Jincheng:
- https://orcid.org/0000-0001-7332-6704
- Neue Suche nach: Hao, Yue
- Neue Suche nach: Wang, Haiyong
- Weitere Informationen zu Wang, Haiyong:
- https://orcid.org/0000-0002-0787-3678
- Neue Suche nach: Mao, Wei
- Neue Suche nach: Zhao, Shenglei
- Weitere Informationen zu Zhao, Shenglei:
- https://orcid.org/0000-0002-1406-1088
- Neue Suche nach: Du, Ming
- Neue Suche nach: Zhang, Yachao
- Weitere Informationen zu Zhang, Yachao:
- https://orcid.org/0000-0003-1864-6953
- Neue Suche nach: Zheng, Xuefeng
- Weitere Informationen zu Zheng, Xuefeng:
- https://orcid.org/0000-0001-9474-047X
- Neue Suche nach: Wang, Chong
- Weitere Informationen zu Wang, Chong:
- https://orcid.org/0000-0002-0787-3678
- Neue Suche nach: Zhang, Chunfu
- Weitere Informationen zu Zhang, Chunfu:
- https://orcid.org/0000-0001-9555-3377
- Neue Suche nach: Zhang, Jincheng
- Weitere Informationen zu Zhang, Jincheng:
- https://orcid.org/0000-0001-7332-6704
- Neue Suche nach: Hao, Yue
In:
IEEE Journal of the Electron Devices Society
;
9
;
125-129
;
2021
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
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Beteiligte:Wang, Haiyong ( Autor:in ) / Mao, Wei ( Autor:in ) / Zhao, Shenglei ( Autor:in ) / Du, Ming ( Autor:in ) / Zhang, Yachao ( Autor:in ) / Zheng, Xuefeng ( Autor:in ) / Wang, Chong ( Autor:in ) / Zhang, Chunfu ( Autor:in ) / Zhang, Jincheng ( Autor:in ) / Hao, Yue ( Autor:in )
-
Erschienen in:IEEE Journal of the Electron Devices Society ; 9 ; 125-129
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Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsdatum:01.01.2021
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Format / Umfang:1511335 byte
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 9
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Graphitic Carbon Nitride (g-C₃N₄)/Al₂O₃ Heterostructure as Double Dielectric: A Comparative Study in MIS Based on a-IGZOPatra, Purna Chandra / Mohapatra, Y. N. et al. | 2021
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Highly Sensitive Piezoresistive Sensors Based on a Voltage Divider Circuit With TFTs for Ultra-Low Pressure DetectionFeng, Jiayu / Chen, Longlong / Li, Xifeng / Zhang, Jianhua et al. | 2021
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Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed StressRen, Y. / Chen, Y. Q. / Liu, C. / Xu, X. B. / Gao, R. / Lei, D. Y. / Lai, P. / Huang, Y. / He, J. et al. | 2021
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Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETsLiu, Tianshi / Zhu, Shengnan / White, Marvin H. / Salemi, Arash / Sheridan, David / Agarwal, Anant K. et al. | 2021
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Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash MemoryCheng, Ting / Jia, Jianquan / Jin, Lei / Jia, Xinlei / Xia, Shiyu / Lu, Jianwei / Li, Kaiwei / Luo, Zhe / Li, Da / Liu, Hongtao et al. | 2021
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Efficient and Optimized Methods for Alleviating the Impacts of IR-Drop and Fault in RRAM Based Neural Computing SystemsHuang, Chenglong / Xu, Nuo / Qiu, Keni / Zhu, Yujie / Ma, Desheng / Fang, Liang et al. | 2021
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Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al ReactionYang, Huan / Li, Jiye / Zhou, Xiaoliang / Lu, Lei / Zhang, Shengdong et al. | 2021
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Memory Operation of Z²-FET Without Selector at High TemperatureKwon, S. / Navarro, C. / Gamiz, F. / Cristoloveanu, S. / Kim, Y.-T. / Ahn, J. et al. | 2021
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Two-Dimensional Transient Temperature Distribution Measurement of GaN Light-Emitting Diode Using High Speed CameraXiao, Guangheng / Du, Wujun / Wang, Zhiyun / Chen, Guolong / Zhu, Lihong / Gao, Yulin / Chen, Zhong / Guo, Ziquan / Lu, Yijun et al. | 2021
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Determining the Electrical Charging Speed Limit of ReRAM Devicesvon Witzleben, M. / Walfort, S. / Waser, R. / Menzel, S. / Bottger, U. et al. | 2021
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Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT CharacteristicsMizutani, Akira / Hamano, Fuminobu / Nakamura, Daisuke / Goto, Tetsuya / Aid, Siti Rahmah / Ikenoue, Hiroshi et al. | 2021
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Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate BiasChang, Chih-Yao / Shen, Yao-Luen / Wang, Ching-Yao / Tang, Shun-Wei / Wu, Tian-Li / Kuo, Wei-Hung / Lin, Suh-Fang / Huang, Chih-Fang et al. | 2021
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Junction Design and Complementary Capacitance Matching for NCFET CMOS LogicVega, Reinaldo A. / Ando, Takashi / Philip, Timothy M. et al. | 2021
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Low Loss and Low EMI Noise CSTBT With Split Gate and Recessed Emitter TrenchZhang, Jinping / Xiao, Xiang / Zhu, Rongrong / Zhao, Qian / Zhang, Bo et al. | 2021
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A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS DiodeZhang, Jinping / Chen, Zixun / Tu, Yuanyuan / Deng, Xiaochuan / Zhang, Bo et al. | 2021
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A Modified NMOS Inverter With Rail-To-Rail Output Swing and Its Application in the Gate Driver Integrated by Metal Oxide TFTsZou, Pei-An / Chen, Jun-Wei / Xiang, Kai / Zhou, Lei / Zou, Jian-Hua / Xu, Miao / Wang, Lei / Wu, Wei-Jing / Peng, Jun-Biao / Chan, Mansun et al. | 2021
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Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETsLee, Jae-Hoon / Im, Ki-Sik / Lee, Jung-Hee et al. | 2021
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Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics Under Both Forward and Reverse Stress ConditionsLiu, Zhiwei / Cai, Puyang / Yu, Songhai / Han, Linxin / Wang, Runsheng / Wu, Yanqing / Ren, Pengpeng / Ji, Zhigang / Huang, Ru et al. | 2021
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Simultaneous Analysis of Multi-Variables Effect on the Performance of Multi-Domain MFIS Negative Capacitance Field-Effect TransistorsHe, Guan-You / Li, Ming-Hao / Liu, Wei-Dong / Ying, Lei-Ying / Zhang, Bao-Ping / Zheng, Zhi-Wei / Cheng, Chun-Hu et al. | 2021
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Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT ModelPradhan, Mamta / Alomari, Mohammed / Moser, Matthias / Fahle, Dirk / Hahn, Herwig / Heuken, Michael / Burghartz, Joachim N. et al. | 2021
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Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal ApplicationsZhou, Yuwei / Zhu, Jiejie / Mi, Minhan / Zhang, Meng / Wang, Pengfei / Han, Yutong / Wu, Sheng / Liu, Jielong / Zhu, Qing / Chen, Yilin et al. | 2021
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Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift RegionLan, Tien-Yu / Chen, Shen-Li / Chen, Hung-Wei / Lee, Yi-Mu et al. | 2021
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Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash MemoriesLee, Jun Gyu / Jung, Woo Je / Park, Jae Hyeon / Yoo, Keon-Ho / Kim, Tae Whan et al. | 2021
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Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency NoiseChen, Ya-Yi / Liu, Yuan / Wang, Li / Li, Bin / Xiong, Xiao-Ming / Chen, Rongsheng et al. | 2021
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Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FETGuan, Yunhe / Chen, Haifeng / Huang, Siwei / Liang, Feng et al. | 2021
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Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical ModelMalik, Rasik Rashid / Mir, Mehak Ashraf / Bhat, Zarak / Pampori, Ahtisham / Chauhan, Yogesh Singh / Ahsan, Sheikh Aamir et al. | 2021
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MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on GlassYu, Fangzhou / Hong, Wen-Chiang / Li, Guangyuan / Li, Yuxuan / Lu, Ming / Lu, Yicheng et al. | 2021
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An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETsKim, Dongyoung / yun, Nick / Jang, Seung Yup / Morgan, Adam J. / Sung, Woongje et al. | 2021
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Erratum to “Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories”Lee, Jun Gyu / Jung, Woo Je / Park, Jae Hyeon / Yoo, Keon-Ho / Kim, Tae Whan et al. | 2021
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Improved Performance of InGaZnO Thin-Film Transistor With Ti Incorporation Into La2O3 Gate DielectricSong, J. Q. / Yu, Y. Q. / Zheng, K. L. / Su, Y. T. et al. | 2021
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Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS TechnologyHuang, Haiyun / Xu, Yue et al. | 2021
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Determining Two-Dimensional Phosphor Surface Temperature Distribution of Phosphor-Coated LEDs Based on Hyper-Spectral ImagingYang, Chen / Li, Zhi-Hui / Li, Zhen / Zhu, Fang-Yuan / Chen, Hui-Min / Gong, Yu-Jia / Dong, Xiao-Ya / Guo, Zi-Quan / Chen, Guo-Long / Zhu, Li-Hong et al. | 2021
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On the Challenges of Reliable Threshold Voltage Measurement in Ohmic and Schottky Gate p-GaN HEMTsMurukesan, Karthick / Efthymiou, Loizos / Udrea, Florin et al. | 2021
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A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel DiodeLi, Xinyu / Jia, Yunpeng / Zhou, Xintian / Zhao, Yuanfu / Wu, Yu / Hu, Dongqing / Fang, Xingyu / Deng, Zhonghan et al. | 2021
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Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level DetectionSun, Keyang / Pan, Liyang / Wu, Dong / Xu, Jun / Wang, Zheyao et al. | 2021
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Impact of Die Carrier on Reliability of Power LEDsKyatam, Shusmitha / Alves, Luis N. / Maslovski, Stanislav / Mendes, Joana C. et al. | 2021
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Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse FormingOh, Seungyeol / Lee, Seungwoo / Hwang, Hyunsang et al. | 2021
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Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au PassivationLiu, Demin / Chen, Po-Chih / Chou, Tzu-Chieh / Hu, Han-Wen / Chen, Kuan-Neng et al. | 2021
- 876
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Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETsNayak, Suvendu / Lodha, Saurabh / Ganguly, Swaroop et al. | 2021
- 881
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Study on CDM ESD Robustness Among On-Chip Decoupling Capacitors in CMOS Integrated CircuitsHuang, Yi-Chun / Ker, Ming-Dou et al. | 2021
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Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic TemperaturesT Hart, P. A. / Babaie, M. / Vladimirescu, A. / Sebastiano, F. et al. | 2021
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No-Snapback LDMOS Using Adaptive RESURF and Hybrid Source for Ideal SOAToner, B. / Eisenbrandt, S. / Frank, M. / Granzner, R. / Steinbeck, L. / Davis, D. / Dolny, G. M. / Johnson, T. J. / Richards, W. R. et al. | 2021
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Guest Editorial Special Section From the Selected Extended Papers Presented at the CAD-TFT 2020Saha, Samar K. / Nathan, Arokia / Guo, Xiaojun / Sambandan, Sanjiv et al. | 2021
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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTsIniguez, Benjamin / Nathan, Arokia / Kloes, Alexander / Bonnassieux, Yvan / Romanjek, Krunoslav / Charbonneau, Micael / Steen, Jan Laurens Van Der / Gelinck, Gerwin / Gneiting, Thomas / Mohamed, Firas et al. | 2021
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Complementary-Like Inverter Based on Organic-Inorganic Heterojunction Ambipolar Transistors on Flexible SubstratePeng, Zhaohan / Liu, Fengjing / Sun, Huijuan / Wang, Yanjie / Wang, Jiawei / Jiang, Chao et al. | 2021
- 939
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Electrolyte-Gated Field Effect Transistors in Biological Sensing: A Survey of ElectrolytesWang, Guan Ying / Lian, Keryn / Chu, Ta-Ya et al. | 2021
- 951
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Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier DiodeZheng, Ya Liang / Tang, Wing Man / Chau, Tony / Kin On Sin, Johnny / Lai, Peter T. et al. | 2021
- 958
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Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron TransistorsJarndal, Anwar et al. | 2021
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High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET ModuleChen, Yue / Lei, Guangyin / Lu, Guo-Quan / Mei, Yun-Hui et al. | 2021
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Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm ProcessChao, Calvin Yi-Ping / Wu, Meng-Hsu / Yeh, Shang-Fu / Chang, Chin-Hao / Lee, Chi-Lin / Yin, Chin / Chou, Kuo-Yu / Tu, Honyih et al. | 2021
- 985
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Effect of Statistical Dopant Fluctuations on Threshold Voltage of Emerging DevicesSaha, Samar K. et al. | 2021
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Analysis of CMOS Extended-Gate Field-Effect Transistor With On-Chip Window Based on Uricase/RuO2 Sensing FilmKuo, Po-Yu / Chen, Yung-Yu / Lai, Wei-Hao / Chang, Chun-Hung et al. | 2021
- 1003
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Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETsLee, Ching-Sung / Li, Chia-Lun / Hsu, Wei-Chou / You, Cheng-Yang / Liu, Han-Yin et al. | 2021
- 1009
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A Numerical Approach for Space Charge Limited Bipolar Flow in Cylindrical diodesLiao, Mei Yan / Yao, Ruo He / Zhu, Ying Bin et al. | 2021
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4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage ApplicationsDo, Kyoung-Il / Jin, Seung-Hoo / Lee, Byung-Seok / Koo, Yong-Seo et al. | 2021
- 1024
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An RF Stress-Based Thermal Shock Test Method for a CMOS Power AmplifierZhou, Shaohua / Wang, Jian et al. | 2021
- 1030
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Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic TemperatureXie, Tiantian / Wang, Qing / Ge, Hao / Lv, Yinghuan / Ren, Zhipeng / Chen, Jing et al. | 2021
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Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) SubstrateOhmi, S. / Ohtaguchi, Y. / Ihara, A. / Morita, H. et al. | 2021
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Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded GateHuang, Sung-Wei / Hwu, Jenn-Gwo et al. | 2021
- 1049
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Utilization of Unsigned Inputs for NAND Flash-Based Parallel and High-Density Synaptic Architecture in Binary Neural NetworksLee, Sung-Tae / Yeom, Gyuho / Hwang, Joon / Kim, Hyeongsu / Yoo, Honam / Park, Byung-Gook / Lee, Jong-Ho et al. | 2021
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Gate Oxide and Implantation Process Co-Optimization for Low-Power MCU ApplicationsZhao, Zijian / Zhou, Yao / Zhu, Hao / Sun, Qingqing / Zhang, David Wei et al. | 2021
- 1060
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An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance EquationPei, Y. / Al-Saman, Amgad A. / Yin, Chengong / Ryndin, Eugeny A. / Lin, Fujiang et al. | 2021
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Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJsNela, Luca / Erine, Catherine / Oropallo, Maria Vittoria / Matioli, Elison et al. | 2021
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Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO NanostructuresChu, Yen-Lin / Young, Sheng-Joue / Cai, Du-Yi / Chu, Tung-Te et al. | 2021
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A High-Performance SiC Super-Junction MOSFET With a Step-Doping ProfileHuang, Hao / Wang, Ying / Yu, Cheng-Hao / Tang, Zhao-Huan / Li, Xing-Ji / Yang, Jian-Qun / Cao, Fei et al. | 2021
- 1093
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Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin FilmsShao, Minghao / Lu, Tianqi / Wang, Zhibo / Liu, Houfang / Zhao, Ruiting / Liu, Xiao / Zhao, Xiaoyue / Liang, Renrong / Yang, Yi / Ren, Tian-Ling et al. | 2021
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Quenching Statistics of Silicon Single Photon Avalanche DiodesCazimajou, Thibauld / Pala, Marco / Saint-Martin, Jerome / Helleboid, Remi / Grebot, Jeremy / Rideau, Denis / Dollfus, Philippe et al. | 2021
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Analysis and Optimization of Defect Generation Due to Mechanical Stress in High-Density SRAMIshimaru, Kazunari / Tamura, Mizuki / Fujii, Osamu et al. | 2021
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Editorial for the JEDS Special Issue for EDTM 2021Ikeda, Shuji / Li, Yi / Misra, Durga / Nathan, Arokia / Nguyen, Bich-Yen / Shao, Qiming / Surya, Charles / Tang, Jianshi / Wang, Albert / Wakabayashi, Hitoshi et al. | 2021
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Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-All-Around FETsZhao, Yu / Iwase, Taku / Satake, Makoto / Hamamura, Hirotaka et al. | 2021
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WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and BoxHamada, Takuya / Hamada, Masaya / Igarashi, Satoshi / Horiguchi, Taiga / Muneta, Iriya / Kakushima, Kuniyuki / Tsutsui, Kazuo / Tatsumi, Tetsuya / Tomiya, Shigetaka / Wakabayashi, Hitoshi et al. | 2021
- 1125
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Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide ThicknessHan, Kaizhen / Samanta, Subhranu / Sun, Chen / Gong, Xiao et al. | 2021
- 1131
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Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology NodeChoe, Gihun / Yu, Shimeng et al. | 2021
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Analyze Scalable Sudoku-Type DTSCR ESD Protection Array Structures in 22nm FDSOILi, Cheng / Zhang, Feilong / Wang, Chenkun / Pan, Zijin / Di, Mengfu / Wang, Albert et al. | 2021
- 1145
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Ferroelectric-Like Non-Volatile FET With Amorphous Gate Insulator for Supervised Learning ApplicationsPeng, Yue / Zhang, Guoqing / Xiao, Wenwu / Liu, Fenning / Liu, Yan / Wang, Guosheng / Wang, Shulong / Yu, Xiao / Han, Genquan / Hao, Yue et al. | 2021
- 1151
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Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic TemperatureSekiguchi, Shohei / Ahn, Min-Ju / Mizutani, Tomoko / Saraya, Takuya / Kobayashi, Masaharu / Hiramoto, Toshiro et al. | 2021
- 1155
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Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance OperationSun, Shaoyu / Xia, Ling / Wu, Wengang / Jin, Yufeng et al. | 2021
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Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated DiodesWei, Jie / Dai, Kaiwei / Luo, Xiaorong / Ma, Zhen / Li, Jie / Li, Congcong / Zhang, Bo et al. | 2021
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Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality FactorsGong, Hehe / Wang, Zhengpeng / Yu, Xinxin / Ren, Fangfang / Yang, Yi / Lv, Yuanjie / Feng, Zhihong / Gu, Shulin / Zhang, Rong / Zheng, Youdou et al. | 2021
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Investigating Graphene gNEMS ESD Switch for Design OptimizationLi, Cheng / Di, Mengfu / Pan, Zijin / Zhang, Feilong / Chen, Qi / Wang, Albert et al. | 2021
- 1181
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High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBTOoi, Ai Loon / Goh, David / Ngwan, Voon Cheng et al. | 2021
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Hot-Carrier-Induced Reliability for Lateral DMOS Transistors With Split-STI StructuresLu, Li / Lin, Feng / Ma, Shulang / Yin, Zhibo / Sang, Yuanchang / Sun, Weifeng / Liu, Siyang / Su, Wei et al. | 2021
- 1194
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ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD SimulationDi, Mengfu / Pan, Zijin / Li, Cheng / Wang, Albert et al. | 2021
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Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic ComputingFontanini, Riccardo / Segatto, Mattia / Massarotto, Marco / Specogna, Ruben / Driussi, Francesco / Loghi, Mirko / Esseni, David Esseni et al. | 2021
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GaN MSM UV Detectors With Different Electrode MaterialsAn, Yangjie / Liao, Jun / Wu, Cheng / Zhang, Rui / Li, Yong / Li, Tao et al. | 2021
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Design of a Horizontally Aligned Perovskite Nanowire LED With Improved Light ExtractionZhang, Qianpeng / Lin, Yuanjing / Tang, Haoning / Sun, Xiaofei / Cao, Bryan / Zhang, Daquan / Poddar, Swapnadeep / Fan, Zhiyong et al. | 2021
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Semi-Disposable Self-Adhesive Sensor System for Wearable Electrocardiogram DetectionChen, Sujie / Bian, Fangran / Li, Ming / Pei, Yisen / Guo, Xiaojun et al. | 2021
- 1227
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Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband AmplifierOhmori, Kenji / Amakawa, Shuhei et al. | 2021
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Low-Temperature Packaging of Ion-Sensitive Organic Field-Effect Transistors on Plastic for Multiple Ion DetectionTang, Yixiao / Tang, Wei / Song, Yawen / Han, Lei / Huang, Yukun / Liu, Ruili / Su, Yuezeng / Guo, Xiaojun et al. | 2021
- 1243
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Optimization of Bump Defect at High-Concentration In-Situ Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory ApplicationZhao, Dongxue / Xia, Zhiliang / Wu, Linchun / Yang, Tao / Fan, Dongyu / Yang, Yuancheng / Liu, Lei / Zhou, Wenxi / Huo, Zongliang et al. | 2021
- 1248
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Non-Pad-Based in Situ In-Operando CDM ESD Protection Using Internally Distributed NetworkDi, Mengfu / Li, Cheng / Pan, Zijin / Wang, Albert et al. | 2021
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Nonlinear Weight Quantification for Mitigating Stress Induced Disturb Effect on Multilevel RRAM-Based Neural Network AcceleratorWu, Lindong / Yu, Zhizhen / Qin, Yabo / Chen, Qingyu / Cai, Yimao / Huang, Ru et al. | 2021
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On the Critical Role of Ferroelectric Thickness for Negative Capacitance Device-Circuit InteractionPrakash, Om / Gupta, Aniket / Pahwa, Girish / Chauhan, Yogesh S. / Amrouch, Hussam et al. | 2021
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Two-Dimensional Inverters Based on MoS₂-hBN-Graphene Heterostructures Enabled by a Layer-by-Layer Dry-Transfer MethodLiang, Yachun / Zhu, Jiankai / Xiao, Fei / Xu, Bo / Wen, Ting / Wu, Song / Li, Jing / Xia, Juan / Wang, Zenghui et al. | 2021
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Analog Resistive Switching in BEOL, Ferroelectric Synaptic WeightsBegon-Lours, L. / Halter, M. / Popoff, Y. / Yu, Z. / Falcone, D. F. / Davila, D. / Bragaglia, V. / Porta, A. La / Jubin, D. / Fompeyrine, J. et al. | 2021
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Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic ApplicationAnsari, Md. Hasan Raza / Cho, Seongjae / Lee, Jong-Ho / Park, Byung-Gook et al. | 2021
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A Study of ESD-mmWave-Switch Co-Design of 28GHz Distributed Travelling Wave Switch in 22nm FDSOI for 5G SystemsDi, Mengfu / Pan, Zijin / Zhang, Feilong / Li, Cheng / Wang, Han / Wang, Albert et al. | 2021
- 1298
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Golden List of Reviewers for 2021| 2021
- 1309
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IEEE Transactions in Technology and Society| 2021
- 1309
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2021 Index IEEE Journal of the Electron Devices Society Vol. 9| 2021
- C2
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IEEE ELECTRON DEVICES SOCIETY| 2021
- C3
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IEEE Journal of the Electron Devices Society information for authors| 2021
- i
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Table of Contents| 2021