High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications (Englisch)
- Neue Suche nach: Goh, Youngin
- Neue Suche nach: Hwang, Junghyeon
- Neue Suche nach: Kim, Minki
- Neue Suche nach: Jung, Minhyun
- Neue Suche nach: Lim, Sehee
- Neue Suche nach: Jung, Seong-Ook
- Neue Suche nach: Jeon, Sanghun
- Neue Suche nach: Goh, Youngin
- Neue Suche nach: Hwang, Junghyeon
- Neue Suche nach: Kim, Minki
- Neue Suche nach: Jung, Minhyun
- Neue Suche nach: Lim, Sehee
- Neue Suche nach: Jung, Seong-Ook
- Neue Suche nach: Jeon, Sanghun
In:
2021 IEEE International Electron Devices Meeting (IEDM)
;
17.2.1-17.2.4
;
2021
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications
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Beteiligte:Goh, Youngin ( Autor:in ) / Hwang, Junghyeon ( Autor:in ) / Kim, Minki ( Autor:in ) / Jung, Minhyun ( Autor:in ) / Lim, Sehee ( Autor:in ) / Jung, Seong-Ook ( Autor:in ) / Jeon, Sanghun ( Autor:in )
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Erschienen in:2021 IEEE International Electron Devices Meeting (IEDM) ; 17.2.1-17.2.4
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:11.12.2021
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Format / Umfang:1416859 byte
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
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- 13.5.1
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Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET DevicesArimura, H. / Ragnarsson, L.-A. / Oniki, Y. / Franco, J. / Vandooren, A. / Brus, S. / Leonhardt, A. / Sippola, P. / Ivanova, T. / Verni, G. Alessio et al. | 2021
- 13.6.1
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Demonstration of Low EOT Gate Stack and Record Transconductance on $L_{\mathrm{g}}=90$ nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 SuperlatticeLi, W. / Wang, L. C. / Cheema, S. S. / Shanker, N. / Park, J. H. / Liao, Y. H. / Hsu, S. L. / Hsu, C. H. / Volkman, S. / Sikder, U. et al. | 2021
- 14.1.1
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Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computingPillarisetty, R. / Watson, T.F. / Mueller, B. / Henry, E. / George, H.C. / Bojarski, S. / Lampert, L. / Luthi, F. / Kotlyar, R. / Zietz, O. et al. | 2021
- 14.2.1
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Material and integration challenges for large scale Si quantum computingVinet, M. / Bedecarrats, T. / Paz, B. Cardoso / Martinez, B. / Chanrion, E. / Catapano, E. / Contamin, L. / Pallegoix, L. / Venitucci, B. / Mazzocchi, V. et al. | 2021
- 14.3.1
-
High-fidelity Two and Three Spin Operations in Si with Triple Quantum DotsTarucha, S. et al. | 2021
- 14.4.1
-
Silicon-based Quantum Computing: High-density, High-temperature QubitsDzurak, Andrew S. et al. | 2021
- 14.5.1
-
3D Integration Technology for Quantum Computer based on Diamond Spin QubitsIshihara, R. / Hermias, J. / Yu, S. / Yu, K. Y. / Li, Y. / Nur, S. / Iwai, T. / Miyatake, T. / Kawaguchi, K. / Doi, Y. et al. | 2021
- 14.6.1
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Quantum Photonics with SnV Centers in DiamondAghaeimeibodi, S. / Vuckovic, J. et al. | 2021
- 14.7.1
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Packaging and integration challenges in a superconducting-qubit-based quantum computerGiustina, M. et al. | 2021
- 15.1.1
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Surface-Functionalized Hafnia with Bespoke Ferroelectric Properties for Memory and Logic ApplicationsChoe, D.-H. / Bae, H. / Lee, H. / Lee, Y. / Moon, T. / Nam, S. G. / Jo, S. / Lee, H. J. / Lee, E. / Heo, J. et al. | 2021
- 15.2.1
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Variation and Stochasticity in Polycrystalline HZO based MFIM: Grain-Growth Coupled 3D Phase Field Model based AnalysisKoduru, R. / Saha, A. K. / Si, M. / Lyu, X. / Ye, P. D. / Gupta, S. K. et al. | 2021
- 15.3.1
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On the Channel Percolation in Ferroelectric FET Towards Proper Analog States EngineeringNi, Kai / Thomann, Simon / Prakash, Om / Zhao, Zijian / Deng, Shan / Amrouch, Hussam et al. | 2021
- 15.4.1
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NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium OxidesChen, Yu-Chen / Hsiang, Kuo-Yu / Tang, Ying-Tsan / Lee, Min-Hung / Su, Pin et al. | 2021
- 15.5.1
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Predictive Modeling of Ferroelectric Tunnel Junctions for Memory and Analog Weight Cell ApplicationsXiao, Yi / Deng, Shan / Zhao, Zijian / Narayanan, Vijaykrishnan / Ni, Kai et al. | 2021
- 15.6.1
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Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligenceManeux, C. / Mukherjee, C. / Deng, M. / Dubourg, M. / Reveil, L. / Bordea, G. / Lecestre, A. / Larrieu, G. / Trommer, J. / Breyer, E.T. et al. | 2021
- 16.1.1
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Biohybrid Nanostructuringvan der Wijngaart, W. et al. | 2021
- 16.2.1
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Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operationCapua, L. / Sprunger, Y. / Elettro, H. / Grammoustianou, A. / Midahuen, R. / Ernst, T. / Barraud, S. / Gill, R. / Ionescu, A.M. et al. | 2021
- 16.3.1
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RF Powered Flexible Printed Ion-sensitive Organic Field Effect Transistor Chip with Design-to-manufacturing Automation for Mobile Bio-sensingOuyang, B. / Song, Y. / Cai, W. / Tang, Y. / Si, Y. / Yin, X. / Chen, S. / Tang, W. / Zhou, H. / Huang, B. et al. | 2021
- 16.4.1
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High Stretchability Ultralow-Power All-Printed Thin Film Transistor Amplifier on Strip-Helix-FiberJiang, Chen / Tsangarides, Constantinos P. / Cheng, Xiang / Ding, Li / Ma, Hanbin / Nathan, Arokia et al. | 2021
- 16.5.1
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High Throughput Neuromorphic Brain Interface with CuOx Resistive Crossbars for Real-time Spike SortingShi, Yuhan / Ananthakrishnan, Akshay / Oh, Sangheon / Liu, Xin / Hota, Gopabandhu / Cauwenberghs, Gert / Kuzum, Duygu et al. | 2021
- 16.6.1
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Wearable Pulse Wave Sensor and Interface for Real-Time Dynamic Blood Pressure MonitoringLi, Huimin / Li, Anqi / Zhou, Zhongyi / Jiang, Bowei / Yang, Qi / Liu, Xinghui / Wang, Kai et al. | 2021
- 17.2.1
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High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM ApplicationsGoh, Youngin / Hwang, Junghyeon / Kim, Minki / Jung, Minhyun / Lim, Sehee / Jung, Seong-Ook / Jeon, Sanghun et al. | 2021
- 17.3.1
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A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO ChannelLiang, Zhongxin / Tang, Kechao / Dong, Junchen / Li, Qijun / Zhou, Yuejia / Zhu, Runteng / Wu, Yanqing / Han, Dedong / Huang, Ru et al. | 2021
- 17.4.1
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High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 108 CyclesLin, Z. / Si, M. / Luo, Y.-C. / Lyu, X. / Charnas, A. / Chen, Z. / Yu, Z. / Tsai, W. / McIntyre, P. C. / Kanjolia, R. et al. | 2021
- 17.5.1
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First demonstration of three terminal MRAM devices with immunity to magnetic fields and 10 ns field free switching by electrical manipulation of exchange biasZhu, D.Q. / Guo, Z.X. / Du, A. / Xiong, D.R. / Xiao, R. / Cai, W.L. / Shi, K.W. / Peng, S.Z. / Cao, K.H. / Lu, S.Y. et al. | 2021
- 17.6.1
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Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient ≥100fJ/VmCarpenter, R. / Kim, W. / Sankaran, K. / Ao, N. / Ben Chroud, M. / Kumar, A. / Trovato, A. / Pourtois, G. / Couet, S. / Kar, G. S. et al. | 2021
- 18.1.1
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Large-scale TCAD Simulations Enabled by Hardware-Accelerated High Performance ComputingXu, Nuo / Jiang, Zhengping / Lu, Po-Sheng / Chang, Yuan Hao / Li, Ji-Ting / Ong, Kian-Chuan / Xiao, Zhi-Ren / Wu, Jeff et al. | 2021
- 18.2.1
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Restructuring TCAD System: Teaching Traditional TCAD New TricksMyung, Sanghoon / Jang, Wonik / Jin, Seonghoon / Choe, Jae Myung / Jeong, Changwook / Kim, Dae Sin et al. | 2021
- 18.3.1
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Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under New Modeling of Surface Roughness ScatteringSumita, K. / Chen, C.-T. / Toprasertpong, K. / Takenaka, M. / Takagi, S. et al. | 2021
- 18.4.1
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Quantum Transport Simulation with the First-Order Perturbation: Intrinsic AC Performance of Extremely Scaled Nanosheet MOSFETs in THz FrequenciesAhn, Phil-Hun / Hong, Sung-Min et al. | 2021
- 18.5.1
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Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETsHuang, Shijie / Wu, Zhenghua / Xu, Haoqing / Guo, Jingrui / Xu, Lihua / Duan, XinLv / Chen, Qian / Yang, Guanhua / Zhang, Qingzhu / Yin, Huaxiang et al. | 2021
- 18.6.1
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Physics-based Compact Modeling of Statistical Flicker Noise in FinFET TechnologyLiu, Minghao / Zhang, Jiayang / Sun, Zixuan / Wang, Runsheng / Huang, Ru et al. | 2021
- 19.1.1
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In-depth Understanding of Polarization Switching Kinetics in Polycrystalline $\mathbf{Hf}_{0.5} \mathbf{Zr}_{0.5} \mathbf{O}_{2}$ Ferroelectric Thin Film: A Transition From NLS to KAIWei, Wei / Zhang, Weiqiang / Tai, Lu / Zhao, Guoqing / Sang, Pengpeng / Wang, Qianwen / Chen, Fei / Tang, Mingfeng / Feng, Yang / Zhan, Xuepeng et al. | 2021
- 19.2.1
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Apparent ‘Negative Capacitance’ Effects in the Pulse Measurements of FerroelectricsLiu, Zhan / Ma, T. P. et al. | 2021
- 19.3.1
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Standby Bias Improvement of Read After Write Delay in Ferroelectric Field Effect TransistorsWang, Zheng / Tasneem, Nujhat / Hur, Jae / Chen, Hang / Yu, Shimeng / Chern, Winston / Khan, Asif et al. | 2021
- 19.4.1
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FeFETs for Near-Memory and In-Memory ComputeSalahuddin, Saveef / Tan, Ava / Cheema, Suraj / Shanker, Nirmaan / Hoffmann, Michael / Bae, J.-H et al. | 2021
- 19.5.1
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Energy- and Area-efficient Fe-FinFET-based Time-Domain Mixed-Signal Computing In Memory for Edge Machine LearningLuo, Jin / Xu, Weikai / Du, Yide / Fu, Boyi / Song, Jiahao / Fu, Zhiyuan / Yang, Mengxuan / Li, Yiqing / Ye, Le / Huang, Qianqian et al. | 2021
- 19.6.1
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BEOL Compatible Superlattice FerroFET-based High Precision Analog Weight Cell with Superior Linearity and SymmetryAabrar, Khandker Akif / Gomez, Jorge / Kirtania, Sharadindu Gopal / Jose, Matthew San / Luo, Yandong / Ravikumar, Priyankka G. / Ravindran, Prasanna Venkatesan / Ye, Huacheng / Banerjee, Sanjukta / Dutta, Sourav et al. | 2021
- 20.1.1
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A Back Illuminated 6 µm SPAD Pixel Array with High PDE and Timing Jitter PerformanceShimada, S. / Otake, Y. / Yoshida, S. / Endo, S. / Nakamura, R. / Tsugawa, H. / Ogita, T. / Ogasahara, T. / Yokochi, K. / Inoue, Y. et al. | 2021
- 20.2.1
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3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth SensingMorimoto, K. / Iwata, J. / Shinohara, M. / Sekine, H. / Abdelghafar, A. / Tsuchiya, H. / Kuroda, Y. / Tojima, K. / Endo, W. / Maehashi, Y. et al. | 2021
- 20.3.1
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InGaAs/InP SPAD detecting single photons at 1550 nm with up to 50% efficiency and low noiseSignorelli, F. / Telesca, F. / Conca, E. / Frera, A. Della / Ruggeri, A. / Giudice, A. / Tosi, A. et al. | 2021
- 20.4.1
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Single-Chip Beam Scanner LiDAR Module for 20-m ImagingByun, Hyunil / Cho, Yongchul / Hwang, Inoh / Jang, Bongyong / Kim, Jinmyung / Lee, Changbum / Lee, Eunkyung / Lee, Jisan / Otsuka, Tatsuhiro / Shim, Dongshik et al. | 2021
- 21.1.1
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Low-Power and Scalable Retention-Enhanced IGZO TFT eDRAM-Based Charge-Domain ComputingLiu, Jialong / Sun, Chen / Tang, Wenjun / Zheng, Zijie / Liu, Yongpan / Yang, Huazhong / Jiang, Chen / Ni, Kai / Gong, Xiao / Li, Xueqing et al. | 2021
- 21.2.1
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Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS TechnologyBaba, H. / Ohshita, S. / Hamada, T. / Ando, Y. / Hodo, R. / Ono, T. / Hirose, T. / Kurokawa, Y. / Murakawa, T. / Kunitake, H. et al. | 2021
- 21.3.1
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In-Memory Annealing Unit (IMAU): Energy-Efficient (2000 TOPS/W) Combinatorial Optimizer for Solving Travelling Salesman ProblemHong, Ming-Chun / Cho, Le-Chih / Lin, Chih-Sheng / Lin, Yu-Hui / Chen, Po-An / Wang, I-Ting / Tzeng, Pei-Jer / Sheu, Shyh-Shyuan / Lo, Wei-Chung / Wu, Chih-I et al. | 2021
- 21.5.1
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Monolithic 3D Integration of Logic, Memory and Computing-In-Memory for One-Shot LearningLi, Yijun / Tang, Jianshi / Gao, Bin / Yao, Jian / Xi, Yue / Li, Yuankun / Li, Tingyu / Zhou, Ying / Liu, Zhengwu / Zhang, Qingtian et al. | 2021
- 22.1.1
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Fully Self-Aligned Via Integration for Interconnect Scaling Beyond 3nm NodeChen, H.P. / Wu, Y.H. / Huang, H.Y. / Tsai, C.H. / Lee, S.K. / Lee, C.C. / Wei, T.H. / Yao, H.C. / Wang, Y.C. / Liao, C.Y. et al. | 2021
- 22.2.1
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Electromigration and Line R of Graphene Capped Cu Dual Damascene InterconnectNogami, T. / Nguyen, S. / Huang, H. / Lanzillo, N. / Shobha, H. / Li, J. / Peethela, B. / Parbatani, A. / van Schravendijk, B. / Varadarajan, B. et al. | 2021
- 22.3.1
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System Design Technology Co-Optimization for 3D Integration at <5nm nodesSong, S.C. / Nallapati, Giri / Khan, Irfan / Nikfar, Nader / Yan, Bohan / Miranda, Miguel / Lim, Bruce / Nagarajan, Mali / Park, Joon-Young / Srinivas, Vaishnav et al. | 2021
- 22.4.1
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Design and Optimization of SRAM Macro and Logic Using Backside Interconnects at 2nm nodeChen, R. / Sisto, G. / Jourdain, A. / Hiblot, G. / Stucchi, M. / Kakarla, N. / Chehab, B. / Salahuddin, S. M. / Schleicher, F. / Veloso, A. et al. | 2021
- 22.5.1
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Buried Power Rail Metal exploration towards the 1 nm NodeGupta, A. / Radisic, D. / Maes, J. W. / Pedreira, O. Varela / Soulie, J-P. / Jourdan, N. / Mertens, H. / Bandyopadhyay, S. / Le, Q. T. / Pacco, A. et al. | 2021
- 23.1.1
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Hardware Neural Network using Hybrid Synapses via Transfer Learning: WOx Nano-Resistors and TiOx RRAM Synapse for Energy-Efficient Edge-AI SensorChoi, Wooseok / Kwak, Myonghoon / Heo, Seongjae / Lee, Kyumin / Lee, Seungwoo / Hwang, Hyunsang et al. | 2021
- 23.2.1
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Low-power and Self-powered Environmental Sensor Assisted by Deep-Learning TechnologyPark, I. et al. | 2021
- 23.3.1
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Human Retinal Photoreceptor-Inspired Sensor with Adjustable Gain from 0.1–106 and Wide Dynamic Range Over 140dBQi, Yihong / Liu, Xiaolin / Feng, Zhenhao / Li, Qian / Su, Kuiren / Zhou, Xianda / Guo, Jianping / Wang, Kai et al. | 2021
- 23.4.1
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$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave InfraredSteckel, J. S. / Josse, E. / Pattantyus-Abraham, A. G. / Bidaud, M. / Mortini, B. / Bilgen, H. / Arnaud, O. / Allegret-Maret, S. / Saguin, F. / Mazet, L. et al. | 2021
- 23.5.1
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CMOS-MEMS multi-sensor single chip with high heat dissipation and low-temperature hermetic sealingChang, C. Y. / Tseng, S. H. / Chiang, M. H. / Hsin, C. T. / Ke, L. Y. / Wang, Y. J. / Yeh, C. Y. / Tsai, H. H. / Juang, Y. Z. / Yeh, W. K. et al. | 2021
- 23.6.1
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Study of DC-Driven MEM Relay Oscillators for Implementation of Ising MachinesHU, Xiaoer / Tatum, Lars Prospero / Almeida, Sergio Fabian / Esatu, Tsegereda Kedir / Liu, Tsu-Jae King et al. | 2021
- 25.1.1
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Human-Centric ComputingRabaey, Jan M. et al. | 2021
- 25.2.1
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In-Memory Computing with Associative Memories: A Cross-Layer PerspectiveHu, Xiaobo Sharon / Niemier, Michael / Kazemi, Arman / Laguna, Ann Franchesca / Ni, Kai / Rajaei, Ramin / Sharifi, Mohammad Mehdi / Yin, Xunzhao et al. | 2021
- 25.3.1
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Monolithic 3D Compute-in-Memory Accelerator with BEOL Transistor based Reconfigurable InterconnectLuo, Yandong / Dutta, Sourav / Kaul, Ankit / Lim, Sung-kyu / Bakir, Muhannad / Datta, Suman / Yu, Shimeng et al. | 2021
- 25.4.1
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The Future of Hardware Technologies for Computing: N3XT 3D MOSAIC, Illusion Scaleup, Co-DesignRadway, R.M. / Sethi, K. / Chen, W.-C. / Kwon, J. / Liu, S. / Wu, T.F. / Beigne, E. / Shulaker, M.M. / Wong, H.-S.P. / Mitra, S. et al. | 2021
- 25.5.1
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Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and SystemDou, Chunmeng / Xu, Xiaoxin / Zhang, Xumeng / Wang, Linfang / Ye, Wang / An, Junjie / Yang, Jianguo / Luo, Qing / Shi, Tuo / Liu, Jing et al. | 2021
- 25.7.1
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Mm-wave automotive radar: from evolution to revolutionDoris, K. / Jansen, F. / Lont, M. / Dinh, T.V. / Syed, W. / Carluccio, G. / Tiemeijer, L. F. / Saric, T. / Zong, Z. / Osorio, J. et al. | 2021
- 26.1.1
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Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport DevicesJagannathan, H. / Anderson, B. / Sohn, C-W. / Tsutsui, G. / Strane, J. / Xie, R. / Fan, S. / Kim, K-I. / Song, S. / Sieg, S. et al. | 2021
- 26.2.1
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Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and BeyondRitzenthaler, R. / Mertens, H. / Eneman, G. / Simoen, E. / Bury, E. / Eyben, P. / Bufler, F. M. / Oniki, Y. / Briggs, B. / Chan, B.T. et al. | 2021
- 26.3.1
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Critical Elements for Next Generation High Performance Computing Nanosheet TechnologyBao, R. / Durfee, C. / Zhang, J. / Qin, L. / Rozen, J. / Zhou, H. / Li, J. / Mukesh, S. / Pancharatnam, S. / Zhao, K. et al. | 2021
- 26.4.1
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Highly Stacked 8 $\mathbf{Ge}_{\boldsymbol{0.9}}\mathbf{Sn}_{\boldsymbol{0.1}}$ Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record $\mathbf{I}_{\mathbf{ON}}/\mathbf{I}_{\mathbf{OFF}}$ of 1.4x107 and Record $\mathbf{I}_{\mathbf{ON}}$ of $\boldsymbol{92}\boldsymbol{\mu}\mathbf{A}$ at $\mathbf{V}_{\mathbf{ov}}=\mathbf{V}_{\mathbf{DS}}=$ -0.5V by CVD Epitaxy and Dry EtchingTsai, Chung-En / Liu, Yi-Chun / Tu, Chien-Te / Huang, Bo-Wei / Jan, Sun-Rong / Chen, Yu-Rui / Chen, Jyun-Yan / Chueh, Shee-Jier / Cheng, Chun-Yi / Tsen, Chia-Jung et al. | 2021
- 27.1.1
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Self-energies in Atomistic Quantum Transport for Energy Transfer at Irregular InterfacesCharles, James / Lemus, Daniel / Kubis, Tillmann et al. | 2021
- 27.2.1
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Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device PerformanceSang, Pengpeng / Wang, Qianwen / Wei, Wei / Tai, Lu / Zhan, Xuepeng / Li, Yuan / Chen, Jiezhi et al. | 2021
- 27.3.1
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Extended Scale Length Theory Targeting Low-Dimensional FETs for Carbon Nanotube FET Digital Logic Design-Technology Co-optimizationGilardi, C. / Chehab, B. / Sisto, G. / Schuddinck, P. / Ahmed, Z. / Zografos, O. / Lin, Q. / Hellings, G. / Ryckaert, J. / Wong, H.-S.P. et al. | 2021
- 27.4.1
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Design Guidelines of Magnetic Tunnel Junctions with Two-dimensional Tunneling Barrier Layer: Atomistic Simulation Study from Material to DeviceMa, Xiaolei / Chen, Jiezhi / Wang, Kaiyou / Wang, Runsheng / Huang, Ru et al. | 2021
- 27.5.1
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Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear ArchitectureMohiyaddin, F.A. / Li, R. / Brebels, S. / Simion, G. / Dumoulin Stuyck, N. I. / Godfrin, C. / Shehata, M. / Elsayed, A. / Gys, B. / Kubicek, S. et al. | 2021
- 27.6.1
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Time Division Multiplexing Ising Computer Using Single Tunable True Random Number Generator Based on Spin Torque Nano-OscillatorZhang, Bolin / Liu, Yu / Gao, Tianqi / Zhang, Deming / Zhao, Weisheng / Zeng, Lang et al. | 2021
- 28.1.1
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Heater system optimization for robust ePCM reliability and scalability in 28nm FDSOI technologyRanica, R. / Berthelon, R. / Gandolfo, A. / Samanni, G. / Gomiero, E. / Jasse, J. / Mattavelli, P. / Sandrini, J. / Querre, M. / Le-Friec, Y. et al. | 2021
- 28.2.1
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Uncertainty Quantification Based on Multilevel Conductance and Stochasticity of Heater Size Dependent C-doped Ge2Sb2Te5 PCM ChipYan, Longhao / Li, Xi / Zhu, Yihang / Yan, Bonan / Lu, Yingming / Zhang, Teng / Yang, Yuchao / Song, Zhitang / Huang, Ru et al. | 2021
- 28.3.1
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Temperature sensitivity of analog in-memory computing using phase-change memoryBoybat, I. / Kersting, B. / Sarwat, S. Ghazi / Timoneda, X. / Bruce, R. L. / BrightSky, M. / Gallo, M. Le / Sebastian, A. et al. | 2021
- 28.4.1
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Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunitiesRavsher, Taras / Degraeve, Robin / Garbin, Daniele / Fantini, Andrea / Clima, Sergiu / Donadio, Gabriele Luca / Kundu, Shreya / Hody, Hubert / Devulder, Wouter / Van Houdt, Jan et al. | 2021
- 28.5.1
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Low variability high endurance and low voltage arsenic-free selectors based on GeCTeAmbrosi, E. / Wu, C. H. / Lee, H. Y. / Chang, P. C. / Hsu, C. F. / Lee, C. M. / Chang, C. C. / Chen, Y. Y / Heh, D. W. / Hou, D. H. et al. | 2021
- 28.6.1
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Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint MemoryCheng, H. Y. / Chien, W C. / Kuo, I. T. / Yang, C. H. / Chou, Y. C. / Bruce, R. L. / Lai, E. K. / Daudelin, D. / Yeh, C. W. / Gignac, L. et al. | 2021
- 29.1.1
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Reconfigurable Si-based Active Metasurface with Ultra Low Loss and Crosstalk for LiDARJeong, Byung Gil / Park, Junghyun / Kim, Sun Il / Lee, Minkyung / Jang, Jaeduck / Ha, Kyoungho / Choo, Hyuck et al. | 2021
- 29.2.1
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Silicon Photonics Beyond Optical InterconnectsBoeuf, F. / Barrera, C. / Fincato, A. / Tang, H. / Guerber, S. / Monfray, S. / Ohno, S. / Fowler, D. / Charlet, I. / Gianini, L. et al. | 2021
- 29.3.1
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Nanolasers: towards large-scale phase-locked laser arraysFainman, Yeshaiahu / Jiang, Sizhu et al. | 2021
- 29.4.1
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First Demonstration of Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrate for $2\ \mu \mathrm{m}$ Optoelectronic Integrated CircuitsWang, Haibo / Chen, Yue / Zhang, Gong / Zhang, Jishen / Xu, Haiwen / Huang, Yi-Chiau / Gong, Xiao et al. | 2021
- 30.1.1
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Highly Efficient Color Separation and Focusing in the Sub-micron CMOS Image SensorYun, Seokho / Roh, Sookyoung / Lee, Sangyun / Park, Hongkyu / Lim, Minwoo / Ahn, Sungmo / Choo, Hyuck et al. | 2021
- 30.2.1
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Automotive 8.3 MP CMOS Image Sensor with 150 dB Dynamic Range and Light Flicker MitigationInnocent, Manuel / Velichko, Sergey / Lloyd, Denver / Beck, Jeff / Hernandez, Augie / Vanhoff, Barry / Silsbv, Chris / Oberoi, Anirudh / Singh, Gurvinder / Gurindagunta, Sundaraiah et al. | 2021
- 30.3.1
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A $2.9\mu \mathrm{m}$ Pixel CMOS Image Sensor for Security Cameras with high FWC and 97 dB Single-Exposure Dynamic RangeUchida, T. / Yamashita, K. / Masagaki, A. / Kawamura, T. / Tokumitsu, C. / IwabuchI, S. / Onizawa, T. / Ohura, M. / Ansai, H. / Izukashi, K. et al. | 2021
- 30.4.1
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3D Sequential Process Integration for CMOS Image SensorNakazawa, K. / Yamamoto, J. / Mori, S. / Okamoto, S. / Shimizu, A. / Baba, K. / Fujii, N. / Uehara, M. / Hiramatsu, K. / Kumano, H. et al. | 2021
- 31.1.1
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Understanding and modelling the PBTI reliability of thin-film IGZO transistorsChasin, A. / Franco, J. / Triantopoulos, K. / Dekkers, H. / Rassoul, N. / Belmonte, A. / Smets, Q. / Subhechha, S. / Claes, D. / van Setten, M. J. et al. | 2021
- 31.2.1
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Understanding Hot Carrier Reliability in FinFET Technology from Trap-based ApproachWang, Runsheng / Sun, Zixuan / Liu, Yue-Yang / Yu, Zhuoqing / Wang, Zirui / Jiang, Xiangwei / Huang, Ru et al. | 2021
- 31.3.1
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Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOSMichl, J. / Grill, A. / Stampfer, B. / Waldhoer, D. / Schleich, C. / Knobloch, T. / Ioannidis, E. / Enichlmair, H. / Minixhofer, R. / Kaczer, B. et al. | 2021
- 31.4.1
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Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacksFranco, J. / Arimura, H. / de Marneffe, J.-F. / Wu, Z. / Vandooren, A. / Ragnarsson, L.-A / Litta, E. Dentoni / Horiguchi, N. / Croes, K. / Linten, D. et al. | 2021
- 31.5.1
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Next Generation of Robust Aviation Electrification - Challenges and OpportunitiesKshirsagar, Parag / Ewanchuk, Jeffery / Kheraluwala, Mustansir et al. | 2021
- 32.1.1
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Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and SimulationsShao, Yanjie / Pala, Marco G. / Esseni, David / del Alamo, Jesus A. et al. | 2021
- 32.2.1
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High-Speed Ternary CMOS Inverter by Monolithic Integration of NbO2 Threshold Switch with MOSFETHeo, Seongjae / Lee, Junjong / Lee, Sangmin / Lee, Seungwoo / Lee, Chuljun / Baek, Rock-Hyun / Hwang, Hyunsang et al. | 2021
- 32.3.1
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Magnetic domain walls: from physics to devicesRaymenants, E. / Wan, D. / Couet, S. / Canvel, Y. / Thiam, A. / Tsvetanova, D. / Souriau, L. / Asselberghs, I. / Carpenter, R. / Jossart, N. et al. | 2021
- 32.4.1
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Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit DeviceVaz, Diogo C. / Lin, Chia-Ching / Plombon, John / Choi, Won Young / Groen, Inge / Arango, Isabel / Pham, Van Tuong / Nikonov, Dmitri E. / Li, Hai / Debashis, Punyashloka et al. | 2021
- 32.5.1
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Narrow-Band Semiconductor Heterostructures for Efficient Spintronic Memory Device ApplicationsXue, Fenghua / Zhang, Yong / Zhang, Yu / Liao, Liyang / Li, Lun / Ruan, Hanzhi / Sun, Lu / Dong, Jing / Tang, Chenjia / Yu, Guoqiang et al. | 2021
- 33.1.1
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16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow CompatibilityFrancois, T. / Coignus, J. / Makosiej, A. / Giraud, B. / Carabasse, C. / Barbot, J. / Martin, S. / Castellani, N. / Magis, T. / Grampeix, H. et al. | 2021
- 33.2.1
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FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded MemoryChang, S. -C. / Haratipour, N. / Shivaraman, S. / Neumann, C. / Atanasov, S. / Peck, J. / Kabir, N. / Tung, I. -C. / Liu, H. / Krist, B. et al. | 2021
- 33.3.1
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Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZOSung, Minchul / Rho, Kwangmyoung / Kim, Jayong / Cheon, Junho / Choi, Kiyoung / Kim, Dohee / Em, Hoseok / Park, Gyeongcheol / Woo, Jungwook / Lee, Yeongyu et al. | 2021
- 33.4.1
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Embedding ferroelectric HfOx in memory hierarchy: Material- defects - device entanglementPcsic, Milan / Beltrando, Bastien et al. | 2021
- 33.5.1
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Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocationZheng, Yunzhe / Zheng, Yonghui / Gao, Zhaomeng / Yuan, Jun-Hui / Cheng, Yan / Zhong, Qilan / Xin, Tianjiao / Wang, Yiwei / Liu, Cheng / Huang, Yaru et al. | 2021
- 33.6.1
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Comprehensive Understanding of the HZO-based n/pFeFET Operation and Device Performance Enhancement StrategyKuk, Song-Hyeon / Han, Seung-Min / Kim, Bong-Ho / Baek, Seung-Hyub / Han, Jae-Hoon / Kim, Sang-hyeon et al. | 2021
- 34.1.1
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Opportunities in 3-D stacked CMOS transistorsRadosavljevic, M. / Huang, C.-Y. / Rachmady, W. / Seung, S.H. / Thomas, N. K. / Dewey, G. / Agrawal, A. / Owens, K. / Kuo, C. C. / Jezewski, C. J. et al. | 2021
- 34.2.1
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Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FABSmets, Quentin / Schram, Tom / Verreck, Devin / Cott, Daire / Groven, Benjamin / Ahmed, Zubair / Kaczer, Ben / Mitard, Jerome / Wu, Xiangyu / Kundu, Souvik et al. | 2021
- 34.3.1
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Enabling Hybrid Bonding on Intel ProcessElsherbini, Adel / Jun, Kimin / Vreeland, Richard / Brezinski, William / Niazi, Haris Khan / Shi, Yi / Yu, Qiang / Qian, Zhiguo / Xu, Jessica / Liff, Shawna et al. | 2021
- 34.4.1
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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF ApplicationsChang, S.-W. / Lu, T.-H. / Yang, C.-Y. / Yeh, C.-J. / Huang, M.-K. / Meng, C.-F. / Chen, P.-J. / Chang, T.-H. / Chang, Y.-S. / Jhu, J.-W. et al. | 2021
- 34.5.1
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Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage RegulatorsChung, Hao-Tung / Shih, Bo-Jheng / Yang, Chih-Chao / Lin, Nei-Chih / Huang, Po-Tsang / Lan, Yun-Ping / Lai, Kuan-Fu / Hsu, Wan-Ting / Pan, Yu-Ming / Hong, Zhong-Jie et al. | 2021
- 35.1.1
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Integrating Taste Technology with Audiovisual MediaMiyashita, Homei et al. | 2021
- 35.2.1
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A Miniature Electronic Nose for Breath AnalysisLi, Zhaofang / Sie, Syuan-Hao / Lee, Jye-Luen / Chen, Yi-Ren / Chou, Ting-I / Wu, Ping-Chun / Chuang, Yu-Ting / Lin, Yu-Te / Chen, I-Cherng / Lu, Chih-Cheng et al. | 2021
- 35.3.1
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Computational Imaging with Vision Sensors embedding In-pixel ProcessingMartel, J.N.P. / Wetzstein, G. et al. | 2021
- 35.4.1
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AI SoCs for AR/VR User-InteractionRyu, Junha / Im, Dongseok / Yoo, Hoi-Jun et al. | 2021
- 35.5.1
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AR Glasses: Fatigue-free Optical Engines and Energy-efficient SLAM SensorsLee, Hong-Seok / Kim, Sunil / Kim, Yun-Tae / Jeon, Myungjae / Seo, Wontaek / Yang, Daeho / Lee, Chang-Kun / Moon, Seokil / Kwon, Namseop / Seo, Juwon et al. | 2021
- 36.1.1
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Physics and Innovative Technologies in SiC Power DevicesKimoto, T. / Kaneko, M. / Tachiki, K. / Ito, K. / Ishikawa, R. / Chi, X. / Stefanakis, D. / Kobayashi, T. / Tanaka, H. et al. | 2021
- 36.2.1
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Toward High Performance 4H-SiC MOSFETs Using Low Temperature Annealing Process with Supercritical FluidWang, Menghua / Yang, Mingchao / Liu, Weihua / Yang, Songquan / Han, Chuanyu / Geng, Li / Hao, Yue et al. | 2021
- 36.3.1
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Gate Oxide Instability against a Wide Range of Negative Electric Field Stress of SiC MOSFETsNoguchi, M. / Koyama, A. / Iwamatsu, T. / Watanabe, H. / Miura, N. et al. | 2021
- 36.4.1
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Recent Progress in Silicon Devices for Ultra-High Power ApplicationsVobecky, J. / Vemulapati, U. / Wikstrom, T. / Boksteen, B. / Dugal, F. / Stiasny, T. / Corvasce, C. et al. | 2021
- 36.5.1
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1.2 kV GaN/SiC-based Hybrid High Electron Mobility Transistor with Non-destructive BreakdownNakajima, A. / Hirai, H. / Miura, Y. / Harada, S. et al. | 2021
- 36.6.1
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First Demonstration of RESURF and Superjunction ß- Ga2O3 MOSFETs with p-NiO/n- Ga2O3 JunctionsWang, Yibo / Gong, Hehe / Jia, Xiaole / Han, Genquan / Ye, Jiandong / Liu, Yan / Hu, Haodong / Ou, Xin / Ma, Xiaohua / Hao, Yue et al. | 2021
- 37.1.1
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Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smootheningShi, Yuanyuan / Groven, Benjamin / Smets, Quentin / Sutar, Surajit / Banerjee, Sreetama / Medina, Henry / Wu, Xiangyu / Huyghebaert, Cedric / Brems, Steven / Lin, Dennis et al. | 2021
- 37.2.1
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Contact Engineering for High-Performance N-Type 2D Semiconductor TransistorsLin, Y. / Shen, P.-C. / Su, C. / Chou, A.-S. / Wu, T. / Cheng, C.-C. / Park, J.-H. / Chiu, M.-H. / Lu, A.-Y. / Tang, H.-L. et al. | 2021
- 37.3.1
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High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi ContactLi, Weisheng / Fan, Dongxu / Shao, Liangwei / Huang, Futao / Liang, Lei / Li, Taotao / Xu, Yifei / Tu, Xuecou / Wang, Peng / Yu, Zhihao et al. | 2021
- 37.4.1
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Short-Channel Double-Gate FETs with Atomically Precise Graphene NanoribbonsMutlu, Z. / Lin, Y. / Barin, G. B. / Zhang, Z. / Pitner, G. / Wang, S. / Darawish, R. / Giovannantonio, M. Di / Wang, H. / Cai, J. et al. | 2021
- 37.5.1
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Source/Drain Engineering by Tantalum Nitride (TaNx) Electrode for Boosting OSFET PerformanceOkuno, N. / Sato, Y. / Jimbo, Y. / Honda, H. / Kurata, M. / Wakuda, M. / Kunitake, H. / Kobayashi, M. / Yamazaki, S. et al. | 2021
- 37.6.1
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Computational Associative Memory Based on Monolithically Integrated Metal-Oxide Thin Film Transistors for Update-Frequent Search ApplicationsZhao, Zijian / Gomez, Jorge / Ye, Huacheng / Imani, Mohsen / Yin, Xunzhao / Deng, Shan / Melanson, Bryan / Zhang, Jing / Gong, Xiao / Abusleme, Angel et al. | 2021
- 38.1.1
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Spin-charge interconversion in topological insulators and topological semimetals for spin-orbit torque devicesSamarth, N. / Yanez, W. / Ou, Y. et al. | 2021
- 38.2.1
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Proposal for a Negative Capacitance Topological Quantum Field-Effect TransistorFuhrer, M.S. / Edmonds, M.T. / Culcer, D. / Nadeem, M. / Wang, X. / Medhekar, N. / Yin, Y. / Cole, J.H et al. | 2021
- 38.3.1
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Essential Design Criteria for Topological Electronics and Spintronicsde Coster, George J. / Gilbert, Matthew J. et al. | 2021
- 38.4.1
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Topological Semimetals for Electronic DevicesRashidi, A. / Shoron, O. F. / Goyal, Manik / Kealhofer, David A. / Stemmer, S. et al. | 2021
- 38.5.1
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Semiconductor Topological NanophotonicsOta, Y. / Arakawa, Y. / Iwamoto, S. et al. | 2021
- 38.6.1
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Symmetry-Enabled New MicrolasersFeng, Liang / Zhang, Zhifeng / Qiao, Xingdu et al. | 2021
- 39.1.1
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From reliability to security of devicesTria, Assia / Fournier, Jacques et al. | 2021
- 39.2.1
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Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching ArrayDing, Qingting / Jiang, Haijun / Li, Jing / Liu, Chao / Yu, Jie / Chen, Pei / Zhao, Yulin / Ding, Yaxin / Gong, Tiancheng / Yang, Jianguo et al. | 2021
- 39.3.1
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65nm RFSOI Power Amplifier Transistor Ageing at mm W frequencies, 14 GHz and 28 GHzDivay, A. / Forest, J. / Knopik, V. / Hai, J. / Revil, N. / Antonijevic, J. / Michard, A. / Cacho, F. / Vincent, E. / Gaillard, F. et al. | 2021
- 39.4.1
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Thorough Investigation of Low Frequency Noise Mechanisms in AlGaN/GaN and Al2O3/GaN HEMTsKammeugne, R. Kom / Theodorou, C. / Leroux, C. / Mescot, X. / Vauche, L. / Gwoziecki, R. / Becu, S. / Charles, M. / Bano, E. / Ghibaudo, G. et al. | 2021
- 39.5.1
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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTsWu, W.-M. / Chen, S.-H. / Sibaja-Hernandez, A. / Yadav, S. / Peralagu, U. / Yu, H. / Alian, A. / Putcha, V. / Parvais, B. / Groeseneken, G. et al. | 2021
- 40.1.1
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Pseudo-Static 1T Capacitorless DRAM using 22nm FDSOI for Cryogenic Cache MemoryChakraborty, Wriddhi / Saligram, Rakshith / Gupta, Aniket / Jose, Matthew San / Aabrar, Khandker Akif / Dutta, Sourav / Khanna, Abhishek / Raychowdhury, Arijit / Datta, Suman et al. | 2021
- 40.2.1
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Overcoming the Accuracy vs. Performance Trade-off in Oscillator Ising MachinesMallick, A. / Bashar, M. K. / Truesdell, D. S. / Calhoun, B. H. / Shukla, N. et al. | 2021
- 40.3.1
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Computing with Invertible Logic: Combinatorial Optimization with Probabilistic BitsAadit, Navid Anjum / Grimaldi, Andrea / Carpentieri, Mario / Theogarajan, Luke / Finocchio, Giovanni / Camsari, Kerem Y. et al. | 2021
- 40.5.1
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High-Performance 300mm Integrated Superconducting Resonators for Quantum Computing ApplicationsMongillo, M. / Potocnik, A. / Verjauw, J. / Mohiyaddin, F.A. / Ivanov, T. / Acharya, R / Piao, X. / Lozano, D.Perez / Wan, D. / Pacco, A. et al. | 2021