40 Gbit/s directly modulated passive feedback laser (Englisch)
- Neue Suche nach: Troppenz, Ute
- Neue Suche nach: Kreissl, Jochen
- Neue Suche nach: Rehbein, Wolfgang
- Neue Suche nach: Bornholdt, Carsten
- Neue Suche nach: Sartorius, Bernd
- Neue Suche nach: Schell, Martin
- Neue Suche nach: Troppenz, Ute
- Neue Suche nach: Kreissl, Jochen
- Neue Suche nach: Rehbein, Wolfgang
- Neue Suche nach: Bornholdt, Carsten
- Neue Suche nach: Sartorius, Bernd
- Neue Suche nach: Schell, Martin
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:40 Gbit/s directly modulated passive feedback laser
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Beteiligte:Troppenz, Ute ( Autor:in ) / Kreissl, Jochen ( Autor:in ) / Rehbein, Wolfgang ( Autor:in ) / Bornholdt, Carsten ( Autor:in ) / Sartorius, Bernd ( Autor:in ) / Schell, Martin ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.05.2008
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Format / Umfang:340973 byte
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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- 1
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Growth and characterization of bulk GaInSb crystals from non-stoichiometric meltsBliss, David / Becla, Piotr et al. | 2008
- 1
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Long indium phosphide crystals : A contribution to boost commercial applicationsJacquier, Christophe / Kessler, Thierry / Jacob, Guy et al. | 2008
- 1
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Nano-aperture plasmonic VCSELSKoyama, et al. | 2008
- 1
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Fabrication of InP HEMT devices with extremely high FmaxLai, R. / Deal, W.R. / Mei, X.B. / Yoshida, W. / Lee, J. / Dang, L. / Wang, J. / Kim, Y. M. / Liu, P.H. / Radisic, V. et al. | 2008
- 1
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Advanced InP DHBT process for high speed LSI circuitsUrteaga, M. / Pierson, R. / Rowell, P. / Choe, M. / Mensa, D. / Brar, B. et al. | 2008
- 1
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Crystal growth of compound semiconductors with low dislocation densitiesFriedrich, Jochen / Kallinger, Birgit / Knoke, Isabel / Berwian, Patrick / Meissner, Elke et al. | 2008
- 1
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InAsP/InP(001) quantum dots emitting at 1.55 μm grown by metalorganic vapor phase epitaxyMichon, A. / Hostein, R. / Patriarche, G. / Beaudoin, G. / Gogneau, N. / Beveratos, A. / Robert-Philip, I. / Sagnes, I. / Laurent, S. / Sauvage, S. et al. | 2008
- 1
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40 Gbps operation of MOBILE and its application to weighted-sum threshold logic gate using only RTDSKim, Hyungtate / Park, Myunghwan / Seo, Kwangseok et al. | 2008
- 1
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Complicated effects of nitrogen on the structural and optical properties of InAs(N)/GaAs quantum dotsMa, B. S. / Falth, J. F. / Fan, W. J. / Yoon, S. F. et al. | 2008
- 1
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Room temperature photoreflectance study of InGaAs/AlAs quantum wellsMozume, T. / Gozu, S. / Inada, T. / Yoshimi, A. / Susaki, W. et al. | 2008
- 1
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Low noise and high gain-bandwidth product AlInAs avalanche photodiodesRouvie, Anne / Carpentier, Daniele / Decobert, Jean / Lagay, Nadine / Pommereau, Frederic / Achouche, Mohand et al. | 2008
- 1
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Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPEAstromskas, Gvidas / Jeppsson, Mattias / Caroff, Philippe / Wernersson, Lars-Erik et al. | 2008
- 1
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Tunneling at emitter periphery in silicon nitride passivated InP/InGaAs HBTsSachelarie, D. / Predusca, G. / Stanciu, G.A. / Stanciu, S.G. et al. | 2008
- 1
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Improved breakdown voltages for type I InP/InGaAs DHBTsLind, Erik / Griffith, Zach / Rodwell, Mark J. W. et al. | 2008
- 1
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InAs quantum dot evolution observed by in-situ scanning tunneling microscopy during molecular beam epitaxy growthTsukamoto, Shiro et al. | 2008
- 1
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Technology development & design for 22 nm InGaAs/InP-channel MOSFETsRodwell, M. J. W. / Wistey, M. / Singisetti, U. / Burek, G. / Gossard, A. / Stemmer, S. / Engel-Herbert, R. / Hwang, Y. / Zheng, Y. / Van de Walle, C. et al. | 2008
- 1
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Characterization of 1 x 5 InP/InGaAsP waveguide switch based on optical phased arrayTanemura, T. / Takeda, K. / Nakano, Y. et al. | 2008
- 1
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Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffersSaint-Girons, G. / Regreny, P. / Cheng, Jun / Hollinger, Guy / Largeau, L. / Patriarche, G. et al. | 2008
- 1
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Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxyMichon, A. / Hostein, R. / Patriarche, G. / Beaudoin, G. / Gogneau, N. / Beveratos, A. / Robert-Philip, I. / Sagnes, I. / Laurent, S. / Sauvage, S. et al. | 2008
- 1
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InAs/InGaAs composite-channel HEMT on InP: Tailoring InGaAs thickness for performanceLange, M. D. / Mei, X. B. / Chin, T. P. / Yoshida, W. H. / Deal, W. R. / Liu, P.-H. / Lee, J. / Uyeda, J. J. / Dang, L. / Wang, J. et al. | 2008
- 1
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Polarization insensitive operation of multimode interference bistable laser all-optical flip-flopTakeda, Koji / Kanema, Yasuki / Takenaka, Mitsuru / Tanemura, Takuo / Nakano, Yoshiaki et al. | 2008
- 1
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Theoretical and experimental analysis of InAs/InP quantum dash lasersHeck, S.C. / Healy, S.B. / Osborne, S. / Williams, D.P. / Fehse, R. / O'Reilly, E.P. / Lelarge, F. / Poingt, F. / Accard, A. / Pommereau, F. et al. | 2008
- 1
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsRichard, S. / Burin, J.P. / Labbe, C. / Cornet, C. / Folliot, H. / Paranthoen, C. / Nakkar, A. / Rohel, T. / Thoumyre, F. / Tavernier, K. et al. | 2008
- 1
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Simultaneous achievement of high-speed and low-noise performance of pseudomorphic InGaAs/InAlAs HEMTsWatanabe, Issei / Endoh, Akira / Mimura, Takashi / Matsui, Toshiaki et al. | 2008
- 1
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Selective area growth engineering for 80nm spectral range AlGaInAs 10Gbit/s remote amplified modulatorDupuis, N. / Decobert, J. / Jany, C. / Alexandre, F. / Garreau, A. / Brenot, R. / Lagay, N. / Martin, F. / Carpentier, D. / Landreau, J. et al. | 2008
- 1
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Comparative collector design in InGaAs and GaAsSb based InP DHBTsNodjiadjim, V. / Riet, M. / Scavennec, A. / Berdaguer, P. / Gentner, J.L. / Godin, J. / Bove, P. / Lijadi, M. et al. | 2008
- 1
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A compact thermal-via packaging design of GaInP/GaAs collector-up HBTs in small high-power amplifiersLee, P. H. / Chou, J. H. / Tseng, H. C. et al. | 2008
- 1
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Injection type GaInAsP/InP/Si DFB lasers directly bonded on SOI substrateOkumura, Tadashi / Maruyama, Takeo / Yonezawa, Hidenori / Nishiyama, Nobuhiko / Arai, Shigehisa et al. | 2008
- 1
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Surface Fermi level in GaAsSb alloys grown by MBE on Inp substratesChouaib, Houssam / Rudno-Rudzinski, Wojciech / Apostoluk, Aleksandra / Bru-Chevallier, Catherine / Lijadi, Melania / Bove, Phillippe et al. | 2008
- 1
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InAs/InGaAs MQW lasers emitting at 2.3 μm grown by MOVPESato, Tomonari / Mitsuhara, Manabu / Kondo, Yasuhiro et al. | 2008
- 1
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DC—40-GHz SP4T switch IC using high-breakdown-voltage InGaAs/InP composite-channel HEMTs with an InAlP etch stopperKamitsuna, Hideki / Sugiyama, Hiroki / Toshihiko Kosugi, / Haruki Yokoyama, / Koichi Murata, / Yasuro Yamane, / Takatomo Enoki, et al. | 2008
- 1
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A hybrid photonic-integrated electroabsorption modulator device for 50-Gb/s DQPSK generationKazmierski, C. / Dupuis, N. / Decobert, J. / Alexandre, F. / Jany, C. / Garreau, A. / Landreau, J. / Kang, I. / Chandrasekhar, S. / Buhl, L. et al. | 2008
- 1
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Impact of V/III ratio, CBr4 and AsH3 concentrations on the MOVPE growth of GaAsSb for InP DHBT applicationsOstinelli, O. / Liu, H.G. / Zeng, Y.P. / Bolognesi, C.R. et al. | 2008
- 1
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Growth of indium phosphide bulk crystals for radiation detectorsPekarek, L. / Zdansky, K. / Prochazkova, O. et al. | 2008
- 1
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Monolithically integrated filter-free wavelength converter with widely tunable double-ring resonator coupled laserSegawa, T. / Matsuo, S. / Kakitsuka, T. / Shibata, Y. / Sato, T. / Kondo, Y. / Takahashi, R. et al. | 2008
- 1
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DC and RF characteristics of InAlAs/In0.7Ga0.3As HEMTS at 16 KEndoh, Akira / Watanabe, Issei / Shinohara, Keisuke / Mimura, Takashi / Matsui, Toshiaki et al. | 2008
- 1
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High-performance self-aligned InP/InGaAs DHBTs with a passivation ledge utilizing a thin etching stop layerOhkubo, Yukio / Matsumoto, Taisuke / Koji, Takashi / Amano, Yoshiaki / Takagi, Akio / Matsuoka, Yutaka et al. | 2008
- 1
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Optical control of InP-based HEMT millimeter-wave oscillatorsMurata, Hiroshi / Kobayashi, Noriyo / Okamura, Yasuyuki / Kosugi, Toshihiko / Enoki, Takatomo et al. | 2008
- 1
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Single-mode continuous wave operation of electrically pumped 2.25 μm GaSb-based VCSELBachmann, A. / Kashani-Shirazi, K. / Lim, T. / Dier, O. / Lauer, C. / Amann, M.-C. et al. | 2008
- 1
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40 Gbit/s directly modulated passive feedback laserTroppenz, Ute / Kreissl, Jochen / Rehbein, Wolfgang / Bornholdt, Carsten / Sartorius, Bernd / Schell, Martin et al. | 2008
- 1
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Semi-insulating InP detectors with guard ring electrodeYatskiv, Roman / Zdansky, Karel / Pekarek, Ladislav / Gorodynskyy, Vladyslav et al. | 2008
- 1
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InP DHBT circuits for 100 Gb/s Ethernet applicationsWeimann, Nils G. / Houtsma, V. / Baeyens, Y. / Weiner, J. / Tate, A. / Frackoviak, J. / Chen, Y.K. et al. | 2008
- 1
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Selective growth of InP on areas (1μm×1μm) of silicon (100) substrate by molecular beam epitaxyAraki, K. / Hasegawa, S. / Asahi, H. et al. | 2008
- 1
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X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature effectsMori, A. / Tameoka, H. / Tabuchi, M. / Takeda, Y. et al. | 2008
- 1
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1.7-μm laser emission at room temperature using highly-stacked InAs quantum dotsAkahane, Kouichi / Yamamoto, Naokatsu / Sotobayashi, Hideyuki / Tsuchiya, Masahiro et al. | 2008
- 1
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Effect of growth temperature on the thermal stability of 1.3μm InAs/InGaAs/GaAs quantum dot structuresNgo, C. Y. / Yoon, S. F. / Lim, C. S. / Wong, Vincent / Chua, S. J. et al. | 2008
- 1
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Electron effective mass determined from experimental electron eigen-energies in InGaAs/InAlas multi-quantum wellsTanaka, K. / Kotera, N. et al. | 2008
- 1
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2-port vectorial THz electro-optic sampling systemMeignien, L. / Mangeney, J. / Crozat, P. / Lupu, A. et al. | 2008
- 1
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Influence of Yb and Yb2O3 on the properties of InP layersProchazkova, O. / Grym, J. / Zavadil, J. / Lorineik, J. / Zdansky, K. et al. | 2008
- 1
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GaAsSbN/GaAs long wavelength PIN detectorsChi-Kuang Chen, / Ta-Chun Ma, / Yan-Ting Lin, / Hao-Hsiung Lin, et al. | 2008
- 1
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≫ 100 mW RT-CW output power from thermally optimized 1.55μm VECSELTourrenc, J.-P. / Bouchoule, S. / Harmand, J.-C. / Miard, A. / Oudar, J.-L. / Decobert, J. / Lagay, N. et al. | 2008
- 1
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Three level masking for improved aspect ratio InP-based photonic crystalsKarouta, F. / Docter, B. / Geluk, E.J. / Smit, M.K. / Kaspar, P. et al. | 2008
- 1
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High-speed directly and indirectly modulated VCSELsHopfer, F. / Mutig, A. / Strittmatter, A. / Fiol, G. / Moser, P. / Bimberg, D. / Shchukina, V.A. / Ledentsova, N.N. / Lott, J.A. / Quast, H. et al. | 2008
- 1
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A new method to grow III–V crystals from melt in travelling magnetic fieldsRudolph, P. / Frank-Rotsch, Ch. / Lux, B. / Jockel, D. / Kiessling, F.M. / Czupalla, M. et al. | 2008
- 1
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The development and application of novel Ru precursors for atmospheric pressure MOVPE growth of Ru doped current blocking layersDosanjh, S. / Cannard, P. / Firth, R. / Lealman, I. / Moore, R. / Rivers, L. / Robertson, M. / Rushworth, S. / Odedra, R. / Viswanathan, P. et al. | 2008
- 1
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Origin of the annealing-induced blue-shift in GaAsSbNLin, Yan-Ting / Ma, Ta-Chun / Chen, Tsung-Yi / Lin, Hao-Hsiung et al. | 2008
- 1
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Multilayer 1.4 μm InAs quantum dots with thin spacer using GaNAs strain compensation layerSuzuki, R. / Miyamoto, T. / Sengoku, T. / Koyama, F. et al. | 2008
- 1
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A Low DC-Power Multiplexer IC using an InP-based CML-MOBILE RTD/HBT TechnologySunkyu Choi, / Jongwon Lee, / Yongsik Jeong, / Kyounghoon Yang, et al. | 2008
- 1
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Characterization of 1×5 InP/InGaAsP waveguide switch based on optical phased arrayTanemura, Takuo / Takeda, Koji / Nakano, Yoshiaki et al. | 2008
- 1
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Static and dynamic properties of p-doped quantum dash lasers on InPHein, S. / von Hinten, V. / Hofling, S. / Forchel, A. et al. | 2008
- 1
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High frequency characterisation of single InAs nanowire field-effect transistorsBlekker, K. / Do, Q. T. / Matiss, A. / Prost, W. / Tegude, F. J. et al. | 2008
- 1
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10 GHz modulation bandwidth of 1550nm InAs/InP Quantum Dash based lasersLelarge, F. / Brenot, R. / Rousseau, B. / Martin, F. / Poingt, F. / LeGouezigou, L. / Le Gouezigou, O. / Derouin, E. / Drisse, O. / Pommereau, F. et al. | 2008
- 1
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A 6-20 GHz compact multi-bit digital attenuator using InP/InGaAs PIN DiodesEom, Hyunchul / Yang, Kyounghoon et al. | 2008
- 1
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Luminescence of n-InGaAs/p-InP light emitting diode with superconducting Nb electrodeHayashi, Y. / Jo, M. / Kumano, H. / Suemune, I. / Tanaka, K. / Akazaki, T. et al. | 2008
- 1
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Growth and applications of GaSb crystalsDieguez, E. et al. | 2008
- 1
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Semiconductor nanowires in InP and related material systems: MBE growth and propertiesCirlin, G.E. / Dubrovskii, V.G. / Harmand, J.-C. / Patriarche, G. / Glas, F. / Tchernycheva, M. / Sartel, C. et al. | 2008
- 1
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Waveguide optical isolators fabricated by direct bondingMizumoto, Tetsuya / Shoji, Yuya / Ryouhei Takei, et al. | 2008
- 1
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InP-HEMT MMICs for passive millimeter-wave imaging sensorsSato, M. / Hirose, T. / Ohki, T. / Takahashi, T. / Makiyama, K. / Hara, N. / Sato, H. / Sawaya, K. / Mizuno, K. et al. | 2008
- 1
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Enhancement of the recombination rate of InAs quantum dots in a photonic crystal light emitting diodeChauvin, N. / Bitauld, D. / Fiore, A. / Balet, L. / Li, L. H. / Alloing, B. / Francardi, M. / Gerardino, A. et al. | 2008
- 1
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Continuous wave InGaAsP/InP Fabry-Perot lasers on siliconDupont, T. / Grenouillet, L. / Philippe, P. / Perrin, M. / Gilet, P. / Bakir, B. Ben / Fedeli, J.M. / Grosse, P. / Di Cioccio, L. / Chelnokov, A. et al. | 2008
- 1
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Experimental demonstration of 1 x 4 InP/InGaAsP optical integrated multimode interference waveguide switchNiwa, S. / Matsuo, S. / Kakitsuka, T. / Kitayama, K.I. et al. | 2008
- 1
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2-micrometer wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applicationsMereuta, A. / Iakovlev, V. / Caliman, A. / Syrbu, A. / Rudra, A. / Kapon, E. et al. | 2008
- 1
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Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 micrometer by varying cap-layer growth rate in metalorganic vapor phase epitaxyMichon, A. / Hostein, R. / Patriarche, G. / Beaudoin, G. / Gogneau, N. / Beveratos, A. / Robert-Philip, I. / Sagnes, I. / Laurent, S. / Sauvage, S. et al. | 2008
- 1
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The upper limits of cut-off frequency in ultra-short gate length InP-based p-HEMTsAkis, R. / Faralli, N. / Ferry, D. K. / Goodnick, S.M. / Saraniti, M. / Ayubi-Moak, J. S. et al. | 2008
- 1
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Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In0.37Ga0.63As0.89Sb0.11 baseChen, Shu-Han / Wang, Sheng-Yu / Chen, Hsin-Yuan / Teng, Kuo-Hung / Chyi, Jen-Inn et al. | 2008
- 1
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Studies on TlInGaAsN double quantum well structuresKrishnamurthy, D. / Ishimaru, M. / Ozasa, M. / Tanaka, Y. / Hasegawa, S. / Hirotsu, Y. / Asahi, H. et al. | 2008
- 1
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2-μm wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applicationsMereuta, Alexandru / Iakovlev, Vladimir / Caliman, Andrei / Syrbu, Alexei / Rudra, Alok / Kapon, Eli et al. | 2008
- 1
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Optimization of InP APDs for high-speed lightwave systemsOng, D. S. G. / Ng, J. S. / David, J. P. R. / Hayat, M. M. / Sun, P. et al. | 2008
- 1
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AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolationOlivier, Aurelien / Gehin, Thomas / Desplanque, Ludovic / Wallart, Xavier / Roelens, Yannick / Dambrine, Gilles / Cappy, Alain / Bollaert, Sylvain / Lefebvre, Eric / Malmkvist, Mikael et al. | 2008
- 1
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Low temperature MBE-grown In(Ga,Al)As/InP structures for 1.55 μm THz photoconductive antenna applicationsKuenzel, H. / Boettcher, J. / Biermann, K. / Hensel, H.J. / Roehle, H. / Sartorius, B. et al. | 2008
- 1
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Mode locking of optically pumped long wavelength InP-Based semiconductor disk lasers with GaInNAs saturable absorberKhadour, A. / Bouchoule, S. / Aubin, G. / Tourrenc, J. P. / Miard, A. / Harmand, J.C. / Decobert, J. / Oudar, J.L. et al. | 2008
- 1
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Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InPKicken, H.H.J.E. / Barbu, I. / Gabriels, J. / van der Heijden, R.W. / Notzel, R. / Karouta, F. / Salemink, H.W.M. / van der Drift, E. et al. | 2008
- 1
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Performance comparison of InP and AlGaN/GaN Schottky diode hydrogen sensorsAkazawa, Masamichi / Hasegawa, Hideki et al. | 2008
- 1
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Graded-bandgap quantum-dot lasers and arraysYanson, Dan A. / Marsh, John H. / McDougall, Stewart D. / Kowalski, Olek P. / Bryce, A. Catrina / Kim, Shin-Sung et al. | 2008
- 1
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InP double heterojunction bipolar transistor technology for 311 GHz oscillator and 255 GHz amplifierScott, Dennis W. / Sawdai, Donald / Radisic, Vesna / Monier, Cedric / Dang, Linh / Li, Danny / Deal, William R. / Lai, Richard / Gutierrez-Aitken, Augusto et al. | 2008
- 1
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Current gain enhancement in GaAsSb/InP - DHBT type grown by MBE with a graded composition AlInP emitterZaknoune, M. / Colder, H. / Yarekha, D. A. / Dambrine, G. / Mollot, F. et al. | 2008
- 1
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Evidence of RTS noise in emitter-base periphery of InP/GaAsSb/InP HBTGrandchamp, Brice / Maneux, Cristell / Labat, Nathalie / Touboul, Andre / Scavennec, Andre / Riet, Muriel / Godin, Jean et al. | 2008
- 1
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Reliable large format arrays of Geiger-mode avalanche photodiodesSmith, G.M. / Donnelly, J.P. / McIntosh, K.A. / Duerr, E.K. / Shaver, D.C. / Verghese, S. / Funk, J.E. / Mahoney, L.J. / Molvar, K.M. / Chapman, D.C. et al. | 2008