36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology (Englisch)
- Neue Suche nach: Jensen, J.F.
- Neue Suche nach: Stanchina, W.E.
- Neue Suche nach: Metzger, R.A.
- Neue Suche nach: Liu, T.
- Neue Suche nach: Kargodorian, T.V.
- Neue Suche nach: Pierce, M.W.
- Neue Suche nach: McCray, L.G.
- Neue Suche nach: Jensen, J.F.
- Neue Suche nach: Stanchina, W.E.
- Neue Suche nach: Metzger, R.A.
- Neue Suche nach: Liu, T.
- Neue Suche nach: Kargodorian, T.V.
- Neue Suche nach: Pierce, M.W.
- Neue Suche nach: McCray, L.G.
In:
[1991] 49th Annual Device Research Conference Digest
;
VIA_5-0_78
;
1991
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ISBN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology
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Beteiligte:Jensen, J.F. ( Autor:in ) / Stanchina, W.E. ( Autor:in ) / Metzger, R.A. ( Autor:in ) / Liu, T. ( Autor:in ) / Kargodorian, T.V. ( Autor:in ) / Pierce, M.W. ( Autor:in ) / McCray, L.G. ( Autor:in )
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Erschienen in:[1991] 49th Annual Device Research Conference Digest ; VIA_5-0_78
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.01.1991
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Format / Umfang:190274 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 0_1
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49th Annual Device Research Conference [front matter]| 1991
- IA_1
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Best Structures for Deep Submicron (0.1-0.3/spl mu/m) Mos DevicesTasch, A.F. et al. | 1991
- IA_2
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Conjugated Polymers for Electronic, Opto-Electronic and All Optical Device Applications:Bradley, D.D.C. et al. | 1991
- IA_3
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Status of Tft/lcd Flat Panel DisplayTsukada, T. et al. | 1991
- IA_4
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Current Capabilities/needs and future possibilities of multi-Chip-modules SummaryJohnson, R.R. et al. | 1991
- IIA_1
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High Speed Single Quantum Well Ingaas/gaas Laser Design and ExperimentNagarajan, R. / Fukushima, T. / Bowers, J.E. / Geels, R.S. / Coldren, L.A. et al. | 1991
- IIA_2
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200 A/cm/sup 2/ Threshold Current Density 1.5/spl mu/m Gainas/aigainas Strained-layer Grin-sch Quantum Well Laser Diodes Grown By OmcvdKasukawa, A. / Bhat, R. / Zah, C.E. / Koza, M.A. / Schwarz, S.A. / Lee, T.P. et al. | 1991
- IIA_3
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Low-threshold Ingas/gaas Strained-layer Surface Emitting Lasers With Two 45/spl deg/ Angle Etched Total Reflection MirrorsChao, C.P. / Law, K.-K. / Merz, J.L. et al. | 1991
- IIA_4
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Large Cw Power, Very Low Threshold, Single Transverse Mode Operation of Vertical Cavity Mushroom Structure Surface Emitting LasersYang, Y.J. / Dziura, T.G. / Wang, S.C. / Fernandez, R. / Wang, S. et al. | 1991
- IIA_5
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Strained Ingaas-gaas Quantum Well Lasers By Impurity-induced Disordering With Very Low Threshold and Moderate Blue-shiftZou, W.X. / Coldren, L.A. / Fu, R.J. / Hong, C.S. et al. | 1991
- IIA_6
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Stable-cw-operation of a Mqw Laser Emitting at 1.54 /spl mu/m on a Si Substrate at Room TemperatureSugo, M. / Mori, H. / Itoh, Y. / Sakai, Y. / Tachikawa, M. et al. | 1991
- IIA_7
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A Novel Sal-Pinsch Quantum Well Laser Structure for a Pinched Beam DivergenceChen, Y.K. / Wu, M.C. / Hong, M.H. / Mannaerts, J. / Chin, M.A. / Sergent, A.M. et al. | 1991
- IIA_8
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Molecular Beam Epitaxy Grown PbSnTe Buried Quantum Well Diode Lasers with PbEuSeTe Confinement LayersFeit, Z. / Kostyk, D. / Woods, R.J. / Mak, P. et al. | 1991
- IIB_1
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A New Method to Enhance Mobility of Poly-Si Tft Recrystallized by Excimer Laser AnnealingKuriyama, H. / Kiyama, S. / Kuwahara, T. / Noguchi, S. / Nakano, S. et al. | 1991
- IIB_2
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Improved Ruggedness of a High Current Vertical Power DmosKim, M.J. / Mukherjee, S. / Young, J.C. et al. | 1991
- IIB_3
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The Minority Carrier Injection Controlled Field Effect Transistor (micfet)Ajit, J.S. / Baliga, B.J. / Tandon, S. / Reisman, A. et al. | 1991
- IIB_4
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Gate-Self-Aligned N-Channel and P-Channel Germanium MosfetsRansom, C.M. / Jackson, T.N. / DeGelormo, J.F. et al. | 1991
- IIB_5
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Current Gain - Early Voltage Products In Graded Base Si/Si/sub 1-x/Ge/sub x/Si Heterojunction Bipolar TransistorsPrinz, E.J. / Sturm, J.C. et al. | 1991
- IIB_6
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Sige/si Camel-barrier Heterojunction Internal Photoemission Lwir DetectorLin, T.L. / Dejewski, S.M. / Ksendzov, A. / Jones, E.W. et al. | 1991
- IIB_7
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A New Device Structure And Process Flow For A Low Leakage Pin-diode-based Integrated Detector ArraySnoeys, W. / Plummer, J. / Parker, S. / Kenney, C. et al. | 1991
- IIB_8
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Tri-calorimetric Detector In Silicon With One PhotodiodeWolffenbuttel, R.F. / Blaauw, E.J. / Wolffenbuttel, M.R. / de Graaf, G. et al. | 1991
- IIIA_1
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Low Series Resistance Continuously-graded-mirror Multiple Quantum Well Vertical-cavity Surface-emitting Lasers Grown By MocvdPing Zhou, / Cheng, J. / Schaus, C.F. / Sun, S.Z. / Kopchik, D. / Hains, C. / Wei Hsin, / Chien-hua Chen, / Myers, D.R. / Vawter, G.A. et al. | 1991
- IIIA_2
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Optical Confinement Factor Dependence of K-factor, Differential Gain and Nonlinear Gain in 1.55/spl mu/m Mqw and Strained Mqw LasersShimizu, J. / Yamada, H. / Murata, S. / Tomita, A. / Kitamura, M. / Suzuki, A. et al. | 1991
- IIIA_3
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Heterodyne Measurement of Linewidth, Tunability and Frequency Synthesis of Vertical-Cavity Surface-Emitting Laser Diode ArraysOlbright, G.R. / Bryan, R.P. / Fu, W.S. / Apte, R. / Bloom, D.M. et al. | 1991
- IIIA_4
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Bistability and Optical Switching in an Aias-Gaas-Ingaas Vertical-Cavity Surface-emitting LaserDeppe, D.G. / Lei, C. / Lee, W.D. / Rogers, T.J. / Campbell, J.C. / Streetman, B.G. et al. | 1991
- IIIA_5
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Monolithic Integration of a Photodetector and a Vertical Cavity Surface Emitting LaserHasnain, G. / Tai, K. / Wang, Y.H. / Wynn, J.D. / Choquette, K.D. / Weir, B.E. / Cho, A.Y. et al. | 1991
- IIIA_6
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All-Electrical Laser Diode Characterization by Monolithic Integration with a PhotodiodeChu, A. / Gigase, Y. / Zeghbroeck, B.V. et al. | 1991
- IIIA_7
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Three Terminal Does Lasers with Exceptionally Low Threshold CurrentsTaylor, G.W. / Doctor, D.P. / Cooke, P. et al. | 1991
- IIIB_1
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Characteristics of Inaias/ingaasp Quantum-Well HemtsHong, W-P. / Bhat, R. / Hayes, J.R. / Chang, G.K. / Nguyen, C. / Koza, M. et al. | 1991
- IIIB_2
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0.33/spl mu/m Millimeter Wave Inp-Channel Hemts with High F/sub T/ and F/sub MAX/Aina, L. / Burgess, M. / Mattingly, M. / Meerschaert, A. / Tong, M. / Ketterson, A. / Adesida, I. et al. | 1991
- IIIB_3
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Inp Based Inverted High Electron Mobility TransistorsSchmitz, A.E. / Nguyen, L.D. / Brown, A.S. / Metzger, R.A. et al. | 1991
- IIIB_4
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Enhancement of Mobility In Pseudomorphic FETs with up and down MonolayersGoronkin, H. / Tehrani, S. / Droopad, R. / Maracas, G.N. / J. Shen, / Legge, R.N. / X.T. Zhu, et al. | 1991
- IIIB_5
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High-Transconductance Ingaas/Inaias SisfetsJackson, T.N. / Solomon, P.M. / Tischler, M.A. / Pettit, G.D. / Canora, F.J. / DeGelormo, J.F. / Bucchignano, J.J. / Wind, S.J. et al. | 1991
- IIIB_6
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0.2μm Gate AlGaAs/GaAs HIGFETt (Heterostructure Insulated gate FET) with a (111) face of n+-GaAs selectively grown by MOCVDUmemoto, Y. / Matsumoto, H. / Hiruma, K. / Ohishi, Y. / Oda, H. / Takahama, M. / Miyazaki, M. / Imamura, Y. et al. | 1991
- IIIB_7
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A Vertically-Integrated Gaas Bipolar Dram CellStellwag, T.B. / Cooper, J.A. / Melloch, M.R. et al. | 1991
- IIIB_8
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Development of an Interactive Design Environment for Heterostructure and Quantum-Well DevicesFrensley, W.R. et al. | 1991
- IVA_1
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High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam EpitaxyDodabalapur, A. / Chang, T.Y. et al. | 1991
- IVA_2
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Delta-Doped Sagm-Avalanche PhotodiodesKuchibhotla, R. / Campbell, J.C. / Tsai, C. / Tsang, W.T. et al. | 1991
- IVA_3
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Dynamic Characteristics of Photonic Gate with Multiple-Quantum-Well Reflection Modulator and Heterojunction PhototransistorMatsuo, S. / Amano, C. / Kurokawa, T. et al. | 1991
- IVA_4
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High Density, Planar Zn-Diffused Ingaas/InP Photodetector Arrays with Extended Short Wavelength ResponseWilliamson, J.B. / Carey, K.W. / Kellert, F.G. / Braun, D.M. / Hodge, L.A. / Loncasty, D.W. et al. | 1991
- IVA_5
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GaAs Sees THE lightWoodall, J.M. / Warren, A.C. / Mclnturff, D.T. / Burroughes, J. / Hodgson, R. / Melloch, M.R. et al. | 1991
- IVA_6
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Long Wavelength (10 /spl mu/m) Infrared Detector Using Si/sub 1-x/Ge/sub x/Si Multiple Quantum WellsKarunasiri, R.P.G. / Park, J.S. / Wang, K.L. et al. | 1991
- IVB_1
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Comparison of Performance and Reliability Between Mosfets with Lpcvd Gate Oxide and Thermal Gate OxideAhn, J. / Ting, W. / Kwong, D.L. et al. | 1991
- IVB_2
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Improved Device Performance and Reliability of N-Channel and P-Channel Mosfets with Ultrathin Gate Oxides Prepared by Conventional Furnace Oxidation of Si in Pure N/sub 2/O AmbientLo, G.Q. / Ting, W. / Ahn, J. / Kwong, D.L. et al. | 1991
- IVB_3
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Effectiveness of N/sub 2/O-nitrided Gate Oxide for High Performance CmosfetsHayashi, T. / Ohno, M. / Uchiyama, A. / Fukuda, H. / Iwabuchi, T. / Ohno, S. et al. | 1991
- IVB_4
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Endurance of Mosfets with Rapid Thermally Deoxidized Nitrided Thin Gate Oxides to Hot Carrier Induced GidlJoshi, A.B. / Kwong, D.L. et al. | 1991
- IVB_5
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Thermal Re-Emission of Trapped Hot Electrons in NMOS TransistorsOr, S.S.B. / Forbes, L. / Haddad, H. et al. | 1991
- IVB_6
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Electrical and Reliability Characteristics of Submicron Nmosfet's with Oxynitride Gate Dielectric Prepared by Rapid Thermal Oxidation in N/sub 2/OHytmsang Hwang, / Wenchi Ting, / Dim-Lee Kwong, / Jack Lee, et al. | 1991
- VA_1
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10 Gbit/s Monolithic Integrated Msm-Photodiode AlGaAs/GaAs-Hemt Optoelectronic ReceiverHurm, V. / Rosenzweig, J. / Ludwig, M. / Benz, W. / Osorio, R. / Berroth, M. / Hulsmann, A. / Kaufel, G. / Kohler, K. / Raynor, B. et al. | 1991
- VA_2
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Ultra-High-Speed Pin/hbt Monolithic Oeic PhotoreceiverPedrotti, K.D. / Pierson, R.L. / Nubling, R.B. / Farley, C.W. / Sovero, E.A. / Chang, M.F. et al. | 1991
- VA_3
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Ultra-Compact Monolithic Integration of Polarization Diversity Waveguide/PhotodiodesPennings, E.C.M. / Hawkins, R.J. / Caneau, C. et al. | 1991
- VA_4
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A 1920 X 1080 Element Deformable Mirror Device for High Definition DisplaysBoysel, R.M. et al. | 1991
- VB_1
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Planar Field-Effect Coupled Quantum WiresEugster, C.C. / Rooks, M.J. et al. | 1991
- VB_2
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Avalanche Electron Emitter Arrays Using Si Ultra-Shallow P-N JunctionsEa, J.Y. / Yicheng Lu, / Dazhong Zhu, / Lalevic, B. / Zeto, R.J. et al. | 1991
- VB_3
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Low Shot Noise in High-Speed Resonant-tunneling diodesBrown, E.R. / Parker, C.D. / Calawa, A.R. / Manfra, M.J. et al. | 1991
- VB_4
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rf Response of High-T/sub c/ Sns Josephson Microbridges Suitable for Integrated Circuit ApplicationsOno, R.H. / Beall, J-A. / Cromar, M.W. / Harvey, T.E. / Johansson, M.E. / Reintsema, C.D. / Rudman, D.A. et al. | 1991
- VIA_1
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Effects of Substrate Tilting in Substantial Improvement of Dc Performance of Aigaas/gaas Npn Dhbt's Grown by MbeChand, N. / Berger, P.R. / Dutta, N.K. et al. | 1991
- VIA_2
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Molecular Beam Epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As Heterojunction Bipolar Transistor onLi, W.Q. / Bhattacharya, P. et al. | 1991
- VIA_3
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Reduction of Low-Frequency Noise in Npn Aigaas/gaas HBTsCosta, D. / Liu, W.U. / Harris, J.S. et al. | 1991
- VIA_4
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On the Investigation of Degradation Mechanisms in Ultra-High Performance Gaas Heterojunction Bipolar TransistorsYang-Hua Chang, / Li, G.P. / Oki, A.K. / Streit, D. / Hafizi, M.E. / Kim, M.E. et al. | 1991
- VIA_5
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36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt TechnologyJensen, J.F. / Stanchina, W.E. / Metzger, R.A. / Liu, T. / Kargodorian, T.V. / Pierce, M.W. / McCray, L.G. et al. | 1991
- VIA_6
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60 Ghz A l InAs/gainas/inp Dhbts Grown by Movpe+mbeStanchina, W.E. / Metzger, R.A. / Liu, T. / Lou, P.F. / Jensen, J.F. / Pierce, M.W. / McCray, L.G. et al. | 1991
- VIA_7
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Znse/gaas Heterostructure Bipolar Transistors: Design and Operation of a New II-VI/III-V Device StructureGlaeser, A. / Nahory, R. / Tamargo, M. / Merz, J. et al. | 1991
- VIB_1
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Integration of Poly Buffered Locos and Gate Processing for Submicron Isolation TechniqueHillenius, S.J. / Chen, M.L. / Fritzinger, L.B. et al. | 1991
- VIB_2
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3-D Simulation of Parasitic Mosfet Effects for Box Isolation TechnologiesHeiser, G. / Noell, M. / Orlowski, M. et al. | 1991
- VIB_3
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Characterization of Back-Channel Subthreshold Conduction of Walled Soi DevicesChen, H. / Yue, J. / Dougal, G. et al. | 1991
- VIB_4
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A Novel Substrate Hot Electron and Hole Injection Structure with a Double Implanted Buried Channel MosfetSukvoon Yoon, / Siergiej, R. / White, M.H. et al. | 1991
- VIB_5
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A New Method of Interface Trap Modeling in Quantized MOSFET Inversion LayersSiergiej, R.R. / Yoon, S. / White, M.H. et al. | 1991
- VIB_6
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Over-estimate of Thin Dielectric Lifetime in Single Doping Type Poly-Gate CapacitorsWang, S.J. / Chen, I.C. / Tigelaar, H.L. et al. | 1991