Stacked nanowires/nanosheets GAA MOSFET from technology to design enablement (Englisch)
- Neue Suche nach: Barbe, J.-Ch.
- Neue Suche nach: Barraud, S.
- Neue Suche nach: Rozeau, O.
- Neue Suche nach: Martinia, S.
- Neue Suche nach: Lacord, J.
- Neue Suche nach: Blaise, P.
- Neue Suche nach: Zeng, Z.
- Neue Suche nach: Bourdet, L.
- Neue Suche nach: Triozon, F.
- Neue Suche nach: Niquet, Y.
- Neue Suche nach: Barbe, J.-Ch.
- Neue Suche nach: Barraud, S.
- Neue Suche nach: Rozeau, O.
- Neue Suche nach: Martinia, S.
- Neue Suche nach: Lacord, J.
- Neue Suche nach: Blaise, P.
- Neue Suche nach: Zeng, Z.
- Neue Suche nach: Bourdet, L.
- Neue Suche nach: Triozon, F.
- Neue Suche nach: Niquet, Y.
In:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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5-8
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2017
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Stacked nanowires/nanosheets GAA MOSFET from technology to design enablement
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Beteiligte:Barbe, J.-Ch. ( Autor:in ) / Barraud, S. ( Autor:in ) / Rozeau, O. ( Autor:in ) / Martinia, S. ( Autor:in ) / Lacord, J. ( Autor:in ) / Blaise, P. ( Autor:in ) / Zeng, Z. ( Autor:in ) / Bourdet, L. ( Autor:in ) / Triozon, F. ( Autor:in ) / Niquet, Y. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.09.2017
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Format / Umfang:762486 byte
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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[Front cover]| 2017
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[Copyright notice]| 2017
- 1
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Physical issues in device modeling: Length-scale, disorder, and phase interferenceSano, Nobuyuki et al. | 2017
- 5
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Stacked nanowires/nanosheets GAA MOSFET from technology to design enablementBarbe, J.-Ch. / Barraud, S. / Rozeau, O. / Martinia, S. / Lacord, J. / Blaise, P. / Zeng, Z. / Bourdet, L. / Triozon, F. / Niquet, Y. et al. | 2017
- 9
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Energy efficient computing with hyperdimensional vector space modelsSalahuddin, Sayeef et al. | 2017
- 13
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New approaches for first-principles modelling of inelastic transport in nanoscale semiconductor devices with thousands of atomsGunst, Tue / Brandbyge, Mads / Palsgaard, Mattias / Markussen, Troels / Stokbro, Kurt et al. | 2017
- 17
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DFT-based analysis of the origin of traps at the InAs/Si (111) interfaceSant, Saurabh / Luisier, Mathieu / Schenk, Andreas et al. | 2017
- 21
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Simulation of doping effect for HfOi-based RRAM based on first-principles calculationsWei, Wei / Chuai, Xichen / Lu, Nianduan / Wang, Yan / Li, Ling / Ye, Cong / Liu, Ming et al. | 2017
- 25
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Phonon confinement effects in diffusive quantum transport simulations with the effective mass approximation and k·p methodZiegler, Anne / Luisier, Mathieu et al. | 2017
- 29
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Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistorsVerreck, Devin / Verhulst, Anne S. / Van de Put, Maarten L. / Soree, Bart / Magnus, Wim / Collaert, Nadine / Mocuta, Anda / Groeseneken, Guido et al. | 2017
- 33
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A hybrid MPI/OpenMP parallelization method for a quantum drift-diffusion modelSho, Shohiro / Odanaka, Shinji et al. | 2017
- 37
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An accurate metric to control time step of transient device simulation by matrix exponential methodKumashiro, Shigetaka / Kamei, Tatsuya / Hiroki, Akira / Kobayashi, Kazutoshi et al. | 2017
- 41
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Finite-difference methodology for full-chip electromigration analysis applied to 3D IC test structure: Simulation vs. experimentChoy, Jun-Ho / Sukharev, Valeriy / Chatterjee, Sandeep / Najm, Farid N. / Kteyan, Armen / Moreau, Stephane et al. | 2017
- 45
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Application of multiobjective optimizer algorithms to the design of SiC devicesBellini, Marco / Knoll, Lars et al. | 2017
- 49
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Unique challenges in compact modelingMudanai, S. / Roy, A. S. et al. | 2017
- 53
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Nanoscale-nMOSFET junction design: Quantum transport approachPourghaderi, M. Ali / Park, Chulwoo / Kim, Jongchol / Jeong, Changwook / Chung, Won-Young / Lee, Keun-Ho / Park, Hong-Hyun / Pham, Anh-Tuan / Jin, Seonghoon / Choi, Woosung et al. | 2017
- 57
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Does a nanowire transistor follow the golden ratio? A 2D Poisson-Schrödinger/3D Monte Carlo simulation studyAl-Ameri, Talib / Georgiev, V. P. / Adamu-Lema, Fikru / Asenov, Asen et al. | 2017
- 61
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Timing and power fluctuations on gate-all-around nanowire CMOS circuit induced by various sources of random discrete dopantsSung, Wen-Li / Chao, Pei-Jung / Li, Yiming et al. | 2017
- 65
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Small-signal analysis of silicon nanowire transistors based on a Poisson/Schrödinger/Boltzmann solverNoei, Maziar / Ruic, Dino / Jungemann, Christoph et al. | 2017
- 69
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Novel experimentally calibrated multiphase TCAD model for cobalt germanide growthRabie, Mohamed A. / Aden-Ali, Ishaq / Haddara, Yaser M. et al. | 2017
- 73
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Accelerated direct flux calculations using an adaptively refined icosahedronManstetten, Paul / Hossinger, Andreas / Weinbub, Josef / Selberherr, Siegfried et al. | 2017
- 77
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3D simulation of silicon-based single-electron transistorsKlupfel, F. J. / Pichler, P. et al. | 2017
- 81
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Simulation of micro-mirrors for optical MEMSZanuccoli, M. / Fiegna, C. / Cianci, E. / Wiemer, C. / Lamperti, A. / Tallarida, G. / Lamagna, L. / Losa, S. / Rossini, S. / Vercesi, F. et al. | 2017
- 85
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Modeling of BTI-aging VT stability for advanced planar and FinFET SRAM reliabilityLee, Y.-H. / Lee, J. H. / Tsai, Y.S. / Mukhopadhyay, S. / Wang, Y.F. et al. | 2017
- 89
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Single event transient in bulk MOSFETs: Original modelling for SPICE applicationRostand, N. / Martinie, S. / Lacord, J. / Rozeau, O. / Barbe, J-C. / Hubert, G. et al. | 2017
- 93
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A unified aging model with recovery effect and its impact on circuit designLee, Wai-Kit / Huang, Kasa / Hsu, Li Chung / Huang, Clement / Liang, Jim / Chen, Julian / Hsiao, Cheng / Su, Ke-Wei / Lin, Chung-Kai / Jeng, Min-Chie et al. | 2017
- 97
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Circuit-aging modeling based on dynamic MOSFET degradation and its verificationRohbani, Nezam / Miyamoto, Hidenori / Kikuchihara, Hideyuki / Navarro, Dondee / Maiti, Tapas Kumar / Ma, Chenyue / Miura-Mattausch, Mitiko / Miremadi, Seyed-Ghassem / Mattausch, Hans Jurgen et al. | 2017
- 101
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FinFET NBTI degradation reduction and recovery enhancement through hydrogen incorporation and self-heatingWong, Hiu Yung / Motzny, Steve / Moroz, Victor / Mishra, Subrat / Mahapatra, Souvik et al. | 2017
- 105
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Modeling of flicker noise in quasi-ballistic FETsDasgupta, Avirup / Chauhan, Yogesh Singh et al. | 2017
- 109
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Dependence of avalanche breakdown on surface & buffer traps in AlGaN/GaN HEMTsJoshi, Vipin / Shankar, Bhawani / Tiwari, Shree Prakash / Shrivastava, Mayank et al. | 2017
- 113
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TCAD for gate stack optimization in pGaN Gate HEMT devicesJaud, M.-A. / Baines, Y. / Charles, M. / Morvan, E. / Scheiblin, P. / Torres, A. / Plissonnier, M. / Barbe, J.-C. et al. | 2017
- 117
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Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gatesEmekar, Sumit / Jha, Jaya / Mukherjee, S. / Meer, M. / Takhar, K. / Saha, D. / Ganguly, S. et al. | 2017
- 121
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Local stress engineering for the optimization of p-GaN gate HEMTs power devicesCosnier, T. / Lucci, L. / Torres, A. / Pala, M. et al. | 2017
- 125
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Modeling of electrical activation ratios of phosphorus and nitrogen doped silicon carbideSimonka, Vito / Hossinger, Andreas / Weinbub, Josef / Selberherr, Siegfried et al. | 2017
- 129
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Soft error rate estimation with TCAD and machine learningHashimoto, Masanori / Liao, Wang / Hirokawa, Soichi et al. | 2017
- 133
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Physical modeling of the electroforming process in resistive-switching devicesMarchewka, A. / Waser, R. / Menzel, S. et al. | 2017
- 137
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Efficient models for designing GB-level 3-D 1S1R horizontal-stacked-RRAM and vertical-RRAM arraysSong, Lin / Zhang, Jinyu et al. | 2017
- 141
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A computationally efficient compact model for leakage in cross-point arrayAziz, Ahmedullah / Jao, Nicholas / Datta, Suman / Narayanan, Vijaykrishnan / Gupta, Sumeet Kumar et al. | 2017
- 145
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A SPICE-compatible model of SG-MONOS for 28nm flash macro design considering the parasitic resistance caused by trapped chargesKoh, Risho / Miyamori, Mitsuru / Tsuneno, Katsumi / Muta, Tetsuya / Kawashima, Yoshiyuki et al. | 2017
- 149
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Back-end limitations in advanced nodes and alternativesAyres, A. / Rozeau, O. / Borot, B. / Fesquet, L. / Cibrario, G. / Vinet, M. et al. | 2017
- 153
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Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technologyLee, Jaehyun / Liang, Jie / Amoroso, Salvatore M. / Sadi, Toufik / Wang, Liping / Asenov, Flamen / Pender, Andrew / Reid, Dave T. / Georgiev, Vihar P. / Millar, Campbell et al. | 2017
- 157
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The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulationsLee, Jaehyun / Berrada, Salim / Liang, Jie / Sadi, Toufik / Georgiev, Vihar P. / Todri-Sanial, Aida / Kalita, Dipankar / Ramos, Raphael / Okuno, Hanako / Dijon, Jean et al. | 2017
- 161
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Modeling electromigration in nanoscaled copper interconnectsFilipovic, L. / de Orio, R.L. / Zisser, W.H. / Selberherr, S. et al. | 2017
- 165
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Comparison of basis sets for efficient Ab-initio modeling of semiconductorsVaidya, Dhirendra / Lodha, Saurabh / Ganguly, Swaroop et al. | 2017
- 169
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On electronic structure and geometry of MoX2 (X = S, Se, Te) and black phosphorus by ab initio Simulation with various van der waals correctionsTsai, Yi-Chia / Li, Yiming et al. | 2017
- 173
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Atomistic simulation of band-to-band tunneling in SiGe: Influence of alloy scatteringPark, Hong-Hyun / Jin, Seonghoon / Choi, Woosung / Luisier, Mathieu / Kim, Jongchol / Lee, Keun-Ho et al. | 2017
- 177
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Transport simulations with density-matrix-based real-time time-dependant density functional theoryAndermatt, Samuel / Bani-Hashemian, Mohammad Hossein / Bruck, Sascha / VandeVondele, Joost / Luisier, Mathieu et al. | 2017
- 181
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Analysis of screening effects in multiple-gate and gate-all-around Si NW array FETsDarbandy, Ghader / Mothes, Sven / SchrOter, Michael / Claus, Martin et al. | 2017
- 185
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Analysis of neutron-induced soft error rates on 28nm FD-SOI and 22nm FinFET latches by the PHITS-TCAD simulation systemFuruta, Jun / Umehara, Shigehiro / Kobayashi, Kazutoshi et al. | 2017
- 189
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On the design challenges of drain extended FinFETs for advance SoC integrationKumar, B. Sampath / Paul, Milova / Shrivastava, Mayank et al. | 2017
- 193
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Evaluation of reconfigurable tunnel FETs for low power and high performance operationBlawid, Stefan / de Andrade, Denise L.M. / Wolf, Florian / Mothes, Sven / Claus, Martin et al. | 2017
- 197
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PNIN-GAA-tunnel FET with palladium catalytic metal gate as a highly sensitive hydrogen gas sensorMadan, Jaya / Shekhar, Skanda / Chaujar, Rishu et al. | 2017
- 201
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Computational modeling of hybrid graphene/quantum dot photodetectorsImran, Hassan / Iqbal, Saqib / Farooq, Amina / Butt, Nauman Z. et al. | 2017
- 205
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Design of high performance Graphene/Silicon photodetectorsIqbal, Saqib / Imran, Hassan / Qasim, Usama B. / Butt, Nauman Z. et al. | 2017
- 209
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Effect of strain on electron mobility in grapheneHirai, Hideki / Ogawa, Matsuto / Souma, Satofumi et al. | 2017
- 213
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Time dependent quantum dynamical study of laser induced current switching in grapheneSouma, Satofumi / Akiyama, Takashi / Sasaoka, Kenji / Ogawa, Matsuto et al. | 2017
- 217
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Performance evaluation of ferroelectric MOSFETs based on Gibbs free energyZhang, Xiaoyi / Liang, Gengchiau et al. | 2017
- 221
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Angular dependence of nonparabolicity factor of energy band structuresFujimoto, Nobuya / Hiroki, Akira / Hiratoko, Shin et al. | 2017
- 225
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Analytical model of energy level alignment at metal-organic interface facilitating hole injectionShi, Xuewen / Xu, Guangwei / Duan, Xinlv / Lu, Nianduan / Chen, Jiezhi / Li, Ling / Liu, Ming et al. | 2017
- 229
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Effects of surface orientation and body thickness on the performance of III-V ultrathin-body nMOSFETsYu, Tsung-Hsing et al. | 2017
- 233
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Simulation of GaN MOS capacitance with frequency dispersion and hysteresisFukuda, Koichi / Hattori, Junichi / Asai, Hidehiro / Shimizu, Mitsuaki / Hashizume, Tamotsu et al. | 2017
- 241
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Modeling of the effective field dependent mobility for TCAD simulation of DRAM cell transistors considering the random discrete dopantsKim, Daewon / Yu, Hoin / Rhee, Seungman / Park, Young June et al. | 2017
- 245
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Towards physics-based DTCO for performance of advanced technology nodesStanojevic, Z. / Baumgartner, O. / Karner, M. / Kernstock, C. / Karner, H. W. / Demel, H. / Strof, G. / Mitterbauer, F. et al. | 2017
- 249
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TCAD simulation methodology for full 3-D electro-physical and advanced thermal analysis of power modulesPribytny, Patrik / Chvala, Ales / Marek, Juraj / Donoval, Daniel et al. | 2017
- 253
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Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulationChvala, Ales / Marek, Juraj / Pribytny, Patrik / Satka, Alexander / Donoval, Daniel / Stoffels, Steve / Posthuma, Niels / Decoutere, Stefaan et al. | 2017
- 257
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Simulation of turn-off oscillation suppression in silicon insulated gate bipolar transistorsMachida, Satoru / Nomura, Katsuya et al. | 2017
- 261
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Compact modeling of normally-on mosfet applicable for any technology generationsIizuka, T. / Hirano, Y. / Umeda, T. / Kikuchihara, H. / Miyamoto, H. / Navarro, D. / Miura-Mattausch, M. / Mattausch, H. J. et al. | 2017
- 265
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Accurate BEOL statistical modeling methodology with circuit-level multi-layer process variationsSong, Young-Seok / Chu, Chun-Yee / Jeon, Jongwook / Kwon, Ui-Hui / Lee, Keun-Ho / Kim, SoYoung et al. | 2017
- 269
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Implementing physical unclonable functions using PCM arraysPiccinini, Enrico / Rudan, Massimo / Brunetti, Rossella et al. | 2017
- 273
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The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETsSchenk, A. / Sant, S. / Moselund, K. / Riel, H. / Memisevic, E. / Wernersson, L.-E. et al. | 2017
- 277
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Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equationTanaka, Hajime / Suda, Jun / Kimoto, Tsunenobu et al. | 2017
- 281
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Multi-subband ensemble Monte Carlo study of tunneling leakage mechanismsMedina-Bailon, C. / Sampedro, C. / Padilla, J.L. / Godoy, A. / Donetti, L. / Gamiz, F. / Sadi, T. / Georgiev, V. / Asenov, A. et al. | 2017
- 285
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Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distributionSawabe, Ryosuke / Ito, Naoto / Awano, Yuji et al. | 2017
- 289
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Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band Monte Carlo simulationFujita, R. / Konaga, K. / Ueoka, Y. / Kamakura, Y. / Mori, N. / Kotani, T. et al. | 2017
- 293
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Hot carrier study including e-e scattering based on a backward Monte Carlo methodKampl, Markus / Kosina, Hans et al. | 2017
- 297
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Advanced non-quasi-static(NQS) compact model for characterization of non-resonant plasmonic terahertz detectorAhn, Sang Hyo / Ryu, Min Woo / Jang, Esan / Jeon, Hyeong Ju / Kim, Kyung Rok et al. | 2017
- 301
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Simulation of THz emission by plasma waves in GaAs devices based on the Boltzmann transport equationKargar, Zeinab / Ruic, Dino / Linn, Tobias / Jungemann, Christoph et al. | 2017
- 305
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High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effectGao, Tianqi / Zeng, Lang / Zhang, Deming / Qin, Xiaowan / Long, Mingzhi / Zhang, Youguang / Zhao, Weisheng et al. | 2017
- 309
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Sub 0.5 V bias voltage operation of a triple-topgate graphene tunnel field effect transistorSuzuki, Shunei / Hammam, Ahmed M. M. / Schmidt, Marek E. / Muruganathan, Manoharan / Mizuta, Hiroshi et al. | 2017
- 313
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Random telegraph noise analysis in redox-based resistive switching devices using KMC simulationsAbbaspour, Elhameh / Menzel, Stephan / Jungemann, Christoph et al. | 2017
- 317
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Simulation based DC and dynamic behaviour characterization of Z2FETAdamu-Lema, F. / Duan, M. / Navaro, C. / Georgiev, V. / Cheng, B. / Wang, X. / Millar, C. / Gamiz, F. / Asenov, A. et al. | 2017
- 321
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Z2-FET DC hysteresis: Deep understanding and preliminary modelLacord, J. / Martinia, S. / Parihar, M.-S. / Lee, K. / Bawedin, M. / Cristoloveanu, S. / Taur, Y. / Barbe, J.-Ch. et al. | 2017
- 325
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2D-TCAD simulation on retention time of Z2FET for DRAM applicationDuan, M. / Adam-Lema, F. / Cheng, B. / Navarro, C. / Wang, X. / Georgiev, V. P. / Gamiz, F. / Millar, C. / Asenov, A. et al. | 2017
- 329
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Optimization guidelines of A2RAM cell performance through TCAD simulationsWakam, F. Tcheme / Lacord, J. / Martinie, S. / Barbe, J.-Ch. / Bawedin, M. / Cristoloveanu, S. et al. | 2017
- 333
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A physical model of the abnormal behavior of hydrogen-terminated Diamond MESFETWong, Hiu Yung / Braga, Nelson / Mickevicius, R. V. et al. | 2017
- 337
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Dielectric properties of mono- and bilayers determined from first principlesLaturia, Akash / Vandenberghe, William G. et al. | 2017
- 341
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Performance investigation of uniaxially strained phosphorene n-MOSFETsJung, Sungwoo / Seo, Junbeom / Heo, Seonghyun / Shin, Mincheol et al. | 2017
- 345
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Modeling of black phosphorus vertical TFETs without chemical doping for drainLu, Shang-Chun / Kim, Youngseok / Gilbert, Matthew J. / Ravaioli, Umberto / Mohamed, Mohamed Y. et al. | 2017
- 349
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First-principles calculations of the non-equilibrium polarization in ultra-small Si nanowire devicesMilnikov, Gennady / Iwata, Jun-ichi / Mori, Nobuya / Osbiyama, Atsushi et al. | 2017
- 353
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Modeling of crystal impurities in III-V ultra-thin body field-effect transistors within the empirical tight-binding frameworkRau, Martin / Luisier, Mathieu / Park, Hong-Hyun et al. | 2017
- 357
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TCAD analysis of SiGe channel FinFET devicesCho, Jin / Geelhaar, Frank / Rana, Uzma / Vanamurthy, Laks / Sporer, Ryan / Benistant, Francis et al. | 2017
- 361
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Fast evaluation of continuous-RX impact on performance for strained FDSOILacord, J. / Jaud, M.-A. / Poiroux, T. / Barbe, J.-Ch. et al. | 2017
- 365
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Versatile technology modeling for 22FDX platform developmentBazizi, E. M. / Zaka, A. / Herrmann, T. / Cortes, I. / Jiang, L. / Goh, M. H. J. / Deb Roy, S. / Nowak, E. / Kluth, G. / Javorka, P. et al. | 2017
- 369
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Optimization of RF-22nm FDSOI figures of merit with 3D TCAD simulationScheiblin, P. / Lacord, J. / Lucci, L. / Barbe, J.C. / Zaka, A. / Bazizi, E. M. / Herrmann, T. / Morvan, S. / Pirro, L. / Andee, Y. et al. | 2017
- 373
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Author index| 2017
- iii
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Foreword| 2017
- v
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Committee members| 2017
- vi
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Conference schedule| 2017
- vii
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Program| 2017