Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs (Englisch)
- Neue Suche nach: Feil, Maximilian W.
- Neue Suche nach: Reisinger, Hans
- Neue Suche nach: Kabakow, Andre
- Neue Suche nach: Aichinger, Thomas
- Neue Suche nach: Gustin, Wolfgang
- Neue Suche nach: Grasser, Tibor
- Neue Suche nach: Feil, Maximilian W.
- Neue Suche nach: Reisinger, Hans
- Neue Suche nach: Kabakow, Andre
- Neue Suche nach: Aichinger, Thomas
- Neue Suche nach: Gustin, Wolfgang
- Neue Suche nach: Grasser, Tibor
In:
2022 IEEE International Reliability Physics Symposium (IRPS)
;
3B.1-1-3B.1-9
;
2022
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs
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Beteiligte:Feil, Maximilian W. ( Autor:in ) / Reisinger, Hans ( Autor:in ) / Kabakow, Andre ( Autor:in ) / Aichinger, Thomas ( Autor:in ) / Gustin, Wolfgang ( Autor:in ) / Grasser, Tibor ( Autor:in )
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Erschienen in:2022 IEEE International Reliability Physics Symposium (IRPS) ; 3B.1-1-3B.1-9
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.03.2022
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Format / Umfang:2138255 byte
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
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Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical StressLee, Kookjin / Kaczer, Ben / Kruv, Anastasiia / Gonzalez, Mario / Eneman, Geert / Okudur, Oguzhan Orkut / Grill, Alexander / Franco, Jacopo / Vici, Andrea / Degraeve, Robin et al. | 2022
- 10A.4-1
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Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k DielectricsWu, Ernest / Li, Baozhen et al. | 2022
- 10B.1-1
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Modeling Hot-Electron Trapping in GaN-based HEMTsModolo, Nicola / De Santi, Carlo / Minetto, Andrea / Sayadi, Luca / Sicre, Sebastien / Prechtl, Gerhard / Meneghesso, Gaudenzio / Zanoni, Enrico / Meneghini, Matteo et al. | 2022
- 10B.2-1
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Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress ConditionMillesimo, M. / Bakeroot, B. / Borga, M. / Posthuma, N. / Decoutere, S. / Sangiorgi, E. / Fiegna, C. / Tallarico, A. N. et al. | 2022
- 10B.3-1
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Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltageLeurquin, C. / Vandendaele, W. / Viey, A.G / Gwoziecki, R. / Escoffier, R. / Salot, R. / Despesse, G. / Iucolano, F. / Modica, R. / Constant, A. et al. | 2022
- 10B.4-1
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GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and RecoverySong, Qihao / Kozak, Joseph P. / Ma, Yunwei / Liu, Jingcun / Zhang, Ruizhe / Volkov, Roman / Sherman, Daniel / Smith, Kurt V. / Saito, Wataru / Zhang, Yuhao et al. | 2022
- 10C.1-1
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Putting AI to Work: A Practical and Simple Application to Improve 3D X-ray FAHarris, William / Gu, Allen / Terada, Masako et al. | 2022
- 10C.2-1
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Defect-controlled Resistance Degradation of Sputtered Lead Zirconate Titanate Thin FilmsHo, Kuan-Ting / Diniz Reis, Daniel Monteiro / Hiller, Karla et al. | 2022
- 10C.3-1
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Power Cycling Reliability of SiC MOSFETs in Discrete and Module PackagesKovacevic-Badstuebner, I. / Race, S. / Ziemann, T. / Tiwari, S. / Grossner, U. / Mengotti, Elena / Bianda, Enea / Jormanainen, Joni et al. | 2022
- 10C.4-1
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Progressive Degradation Without Physical Failure During Mounting Due to Soft Overstress in Compound HBT for RF, Mobile, and Automotive ApplicationsLee, Hyeokjae / Ko, Sanggi / Suh, Ho-Joon / Jeong, Gina / Yeo, Jung-Han / Park, Hye-Min / Kim, Hee-Kyeong / Kim, Jong-Kwan / Chung, Sung S. / Kim, Youngboo et al. | 2022
- 11A.1-1
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Middle-of-the-Line Reliability Characterization of Recessed-Diffusion-Contact Adopted sub-5nm Logic TechnologyKim, Seongkyung / Jung, Ukjin / Choo, Seungjin / Choi, Kihyun / Chung, Taejin / Chung, Shinyoung / Lee, Euncheol / Park, Juhun / Bae, Deokhan / Um, Myungyoon et al. | 2022
- 11A.2-1
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On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-TransistorsTyaginov, Stanislav / Afzalian, Aryan / Makarov, Alexander / Grill, Alexander / Vandemaele, Michiel / Cherenev, Maksim / Vexler, Mikhail / Hellings, Geert / Kaczer, Ben et al. | 2022
- 11A.3-1
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New Modelling Off-state TDDB for 130nm to 28nm CMOS nodesGarba-Seybou, Tidjani / Federspiel, Xavier / Bravaix, Alain / Cacho, Florian et al. | 2022
- 11A.4-1
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AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum MethodologyChen, P. S. / Lee, Y. W. / Huang, D. S. / Chen, S. C. / Cheng, C. F. / Lee, J. H. / He, Jun et al. | 2022
- 11A.5-1
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Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing ApplicationsAmin, Asifa / Rathi, Aarti / Singh, Sujit K. / Dixit, Abhisek / Gonzalez, Oscar H. / Srinivasan, P. / Guarin, Fernando et al. | 2022
- 11B.1-1
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6G Roadmap for Semiconductor Technologies: Challenges and AdvancesCahoon, N. / Srinivasan, P. / Guarin, F. et al. | 2022
- 11B.2-1
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Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applicationsPutcha, V. / Yu, H. / Franco, J. / Yadav, S. / Alian, A. / Peralagu, U. / Parvais, B. / Collaert, N. et al. | 2022
- 11B.3-1
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Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G ApplicationsCioni, Marcello / Zagni, Nicolo / Chini, Alessandro et al. | 2022
- 11B.4-1
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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current CollapseChiocchetta, F. / De Santi, C. / Rampazzo, F. / Mukherjee, K. / Grunenputt, Jan / Sommer, Daniel / Blanck, Herve / Lambert, Benoit / Gerosa, A. / Meneghesso, G. et al. | 2022
- 11B.5-1
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DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited)Ganguly, Satyaki / Bothe, Kyle M. / Niyonzima, Alexandre / Smith, Thomas / Liu, Yueying / Fisher, Jeremy / Radulescu, Fabian / Gajewski, Donald A. / Sheppard, Scott T. / Milligan, Jim W. et al. | 2022
- 11C.1-1
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Exploring Fault Injection Attack Resilience of Secure IC Chips : Invited PaperNagata, Makoto et al. | 2022
- P1.1
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Reliability Analysis of Physically Unclonable Function by Using Aging Variability SimulationAhn, Jae-Gyung / Wesselkamper, Jim / Baek, Ryan SW / Yeh, Ping-Chin / Chang, Jonathan / Wong, Jennifer / Wu, Xin et al. | 2022
- P2-1
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A Calibration-Free Synthesizable Odometer Featuring Automatic Frequency Dead Zone Escape and Start-up Glitch RemovalIslam, Tahmida / Kim, Junkyu / Kim, Chris H. / Tipple, David / Nelson, Michael / Jin, Robert / Jarrar, Anis et al. | 2022
- P3-1
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A Smart SRAM-Cell Array for the Experimental Study of Variability Phenomena in CMOS TechnologiesSaraza-Canflanca, P. / Carrasco-Lopez, H. / Santana-Andreo, A. / Diaz-Fortuny, J. / Castro-Lopez, R. / Roca, E. / Fernandez, F. V. et al. | 2022
- P4-1
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An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator ProcessSuda, Ikuo / Kishida, Ryo / Kobayashi, Kazutoshi et al. | 2022
- P5-1
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Cleaved-Gate Ferroelectric FET for Reliable Multi-Level Cell StorageBagga, Navjeet / Ni, Kai / Chauhan, Nitanshu / Prakash, Om / Hu, X. Sharon / Amrouch, Hussam et al. | 2022
- P6-1
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Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel JunctionsBenatti, Lorenzo / Pavan, Paolo / Puglisi, Francesco Maria et al. | 2022
- P7-1
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Endurance Evaluation on OTS-PCM Device using Constant Current Stress SchemeChien, W. C. / Gignac, L. M. / Chou, Y. C. / Yang, C. H. / Gong, N. / Ho, H. Y. / Yeh, C. W. / Cheng, H. Y. / Kim, W. / Kuo, I. T. et al. | 2022
- P8-1
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Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operationsEsmanhotto, E. / Hirtzlin, T. / Castellani, N. / Martin, S. / Giraud, B. / Andrieu, F. / Nodin, J. F. / Querlioz, D. / Portal, J-M. / Vianello, E. et al. | 2022
- P9-1
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Correlation between Access Polarization and High Endurance (~ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2Hsiang, K.-Y. / Liao, C.-Y. / Lin, Y.-Y. / Lou, Z.-F. / Lin, C.-Y. / Lee, J.-Y. / Chang, F.-S. / Li, Z.-X. / Tseng, H.-C. / Wang, C.-C. et al. | 2022
- P10-1
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Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectorsRavsher, Taras / Fantini, Andrea / Chasin, Adrian Vaisman / Houshmand Sharifi, Shamin / Hody, Hubert / Dekkers, Harold / Witters, Thomas / Van Houdt, Jan / Afanas'ev, Valeri / Couet, Sebastien et al. | 2022
- P11-1
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Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel JunctionsSunbul, Ayse / Ali, Tarek / Hoffmann, Raik / Revello, Ricardo / Raffel, Yannick / Duhan, Pardeep / Lehninger, David / Kuhnel, Kati / Rudolph, Matthias / Oehler, Sebastian et al. | 2022
- P12-1
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Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacksTruijen, B. / O'Sullivan, B. / Alam, Md Nur K. / Claes, D. / Thesberg, M. / Roussel, P. / Chasin, A. / Van den Bosch, G. / Kaczer, B. / Van Houdt, J. et al. | 2022
- P13-1
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Characterization and Analysis of RF Switches in SOI Technology for ESD ProtectionLiu, Jian / Carels, Nathaniel / Peachey, Nathaniel et al. | 2022
- P14-1
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Voltage Surges by Backside ESD Impacts on IC Chip in Flip Chip PackagingWadatsumi, Takuya / Kawai, Kohei / Hasegawa, Rikuu / Miki, Takuji / Nagata, Makoto / Muramatsu, Kikuo / Hasegawa, Hiromu / Sawada, Takuya / Fukushima, Takahito / Kondo, Hisashi et al. | 2022
- P15-1
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A Novel Latch-Up-Immune DDSCR Used for 12 V ApplicationsZhu, Zhihua / Wang, Songyan / Fan, Xiaomei et al. | 2022
- P16-1
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Numerical Simulation and Characterization of PCB WarpageHamid, M. / O'Connell, K. / Bielick, J. / Bennett, J. / Campbell, E. / Alfoqaha, A. et al. | 2022
- P17-1
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Adhesion-Limit in Refractory Transition Metal (Mo) Contact Relay Operation at 300 °C— Avoiding Overestimation for Modern ICsKumar, Sushil / Arya, Dhairya Singh / Garg, Manu / Singh, Pushpapraj et al. | 2022
- P18-1
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Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI TechnologyZhang, Junjun / Liu, Fanyu / Li, Bo / Huang, Yang / Chen, Siyuan / Wang, Yuchong / Luo, Jiajun / Wan, Jing et al. | 2022
- P19-1
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Failure Analysis of AlGaN/GaN Power HEMTs through an innovative sample preparation approachTorrisi, R. L. / Adamo, S. / Alessandrino, S. / Bottari, C. / Carbone, B. / Palmisciano, M. / Vitanza, E. et al. | 2022
- P20-1
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Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETsFavero, D. / De Santi, C. / Mukherjee, K. / Geens, K. / Borga, M. / Bakeroot, B. / You, S. / Decoutere, S. / Meneghesso, G. / Zanoni, E. et al. | 2022
- P21-1
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Impact of Gate Offset on PBTI of p-GaN Gate HEMTsLee, Ethan S. / Joh, Jungwoo / Lee, Dong Seup / del Alamo, Jesus A. et al. | 2022
- P22-1
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Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage StressesKozak, Joseph P. / Song, Qihao / Liu, Jingcun / Zhang, Ruizhe / Li, Qiang / Saito, Wataru / Zhang, Yuhao et al. | 2022
- P23-1
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Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOIChauhan, Nitanshu / Garg, Chirag / Ni, Kai / Behera, Amit Kumar / Yadav, Sarita / Banchhor, Shashank / Bagga, Navjeet / Dasgupta, Avirup / Datta, Arnab / Dasgupta, Sudeb et al. | 2022
- P24-1
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Effect of Non-identical Annealing on the Breakdown Characteristics of Sputtered IGZO FilmsKishore, Rishabh / Vishwakarma, Kavita / Datta, Arnab et al. | 2022
- P25-1
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Frequency dependant gate oxide TDDB modelArabi, M. / Federspiel, X. / Cacho, F. / Rafik, M. / Blonkowski, S. / Garros, X. / Guibaudo, G. et al. | 2022
- P26-1
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Robust Off-State TDDB Reliability of n-LDMOSLiu, Wen / Ioannou, Dimitris P. / Kantarovsky, Johnatan / Min, Byoung / Nigam, Tanya et al. | 2022
- P27-1
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Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacksVici, Andrea / Degraeve, Robin / Bastos, Joao Pedro / Roussel, Philippe / De Wolf, Ingrid et al. | 2022
- P28-1
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A Realistic Modeling Approach To Explain the Physical Mechanism of TDDB For Automotive Grade-Zero ApplicationsYang, C. H. / Chien, P. S. / Cho, Y. S. / Hung, W.S. et al. | 2022
- P29-1
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Electric Field Impact on Lateral Charge Diffusivity in Charge Trapping 3D NAND Flash MemoryLee, Juwon / Seo, Junho / Nam, Jeonghun / Kim, YongLae / Song, Ki-Whan / Song, Jai Hyuk / Young Choi, Woo et al. | 2022
- P30-1
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An Abnormal Negative Temperature Dependence of Erasestate Vt Retention Shift in 3-D NAND Flash MemoriesLiu, Y. H. / Yang, Y. S. / Zhan, T. C. / Hu, M. / Liu, Z. J. / Lin, W. / Liu, A. C. / Hsu, Y. C. et al. | 2022
- P31-1
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Investigation of Retention Characteristics in a Triple-level Charge Trap 3D NAND Flash MemoryFan, Yunjie / Wang, Zhiqiang / Yang, Shengwei / Han, Kun / He, Yi et al. | 2022
- P32-1
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High-k MIM dielectric reliability study in 65nm nodeAchanta, Ravi / McGahay, V. / Boffoli, S. / Kothandaraman, C. / Gambino, J. et al. | 2022
- P35-1
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Effect of OTS Selector Reliabilities on NVM Crossbar-based Neuromorphic TrainingMa, Wen / Hoang, Tung Thanh / Hoskins, Brian / Daniels, Matthew W. / McClelland, Jabez / Gao, Yutong / Adam, Gina / Lueker-Boden, Martin et al. | 2022
- P36-1
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Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristicsFarmer, J. / Veksler, D. / Tang, E. / Bersuker, G. / Gao, D. Z. / El-Sayed, A.-M. / Durrant, T. / Shluger, A. / Rueckes, T. / Cleveland, L. et al. | 2022
- P37-1
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Investigation on Contacts Thermal Stability for 3D Sequential IntegrationMao, S. J. / Liu, J. B. / Wang, Y. / Liu, W. B. / Hu, Y. P. / Cui, H. W. / Zhang, R. / Liu, H. C. / Wang, Z. X. / Zhou, N. et al. | 2022
- P38-1
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Applying Universal Chip Telemetry to Detect Latent Defects and Aging in Advanced ElectronicsLandman, A. Evelyn / Burlak, Alex / Sever, C. Nir / Marc Hutner, D. et al. | 2022
- P39-1
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Pre-O2 treatment for LNA gate oxide leakage improvementKe, Zheng / Goyal, Sachin / Arputharaj, Solomon / Wendy Lau, Wee Yee / Tam Lyn, Tan / Fatt, Lim Dau / Madhavan, Pandurangan / Venkataramani, Chandrasekar et al. | 2022
- P40-1
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Novel Electrical Detection Method for Random Defects on Peripheral Circuits in NAND Flash MemoryNam, Bu-Il / Choi, Youngha / Hong, Sungki / Dong, Ki-Young / Jung, Wontaeck / Park, Sang-Won / Lee, Soon-Yong / Jung, Dooyeun / Kim, Byoung-Hee / Kim, Eunkyoung et al. | 2022
- P41-1
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An Analytical Model of Transient Response of MEMS under High-G shock for Reliability AssessmentPeng, Tianfang / You, Zheng et al. | 2022
- P42-1
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The Optimal Shape of MEMS Beam Under High-G Shock Based on a Probabilistic Fracture ModelPeng, Tianfang / You, Zheng et al. | 2022
- P43-1
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NBTI Characterization with in Situ Poly HeaterCheng, Yu-Hsing / Cook, Michael / Allman, Derryl D. J. et al. | 2022
- P45-1
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A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test StructuresTan, T. L. / Eng, C. W. / Xu, H. / Soon, J. M. / Ebard, E. / Siddabathula, M. / Phoong, B. F. / Poh, K. H. / Prabhu, M. / Zhao, X. -L. et al. | 2022
- P46-1
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Infant Mortality and Wear-Out Failures in Polymer and MnO2 Tantalum CapacitorsTeverovsky, Alexander et al. | 2022
- P47-1
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Reliability of Ferroelectric and Antiferroelectric Si:HfO2 materials in 3D capacitors by TDDB studiesViegas, A. / Falidas, K. / Ali, T. / Kuhnel, K. / Hoffmann, R. / Mart, C. / Czernohorsky, M. / Heitmann, J. et al. | 2022
- P48-1
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Nanoscale Analysis of Breakdown Induced Crack Propagation in DTSCR DevicesChen, Xinqian / Hou, Fei / Dong, Zuoyuan / Zhang, Yuxin / Wang, Chaolun / Liang, Fang / Du, Feibo / Liu, Zhiwei / Wu, Xing et al. | 2022
- P49-1
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Insights on Inter-metal Reliability Assessment of High Voltage InterconnectsYew, Kwang Sing / Ong, Ran Xing / Yap, Hin Kiong / Yi, Wanbing / Phang, Jacquelyn / Chockalingam, R. / Tan, Juan Boon et al. | 2022
- P50-1
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Degradation Behaviors of 22 nm FDSOI CMOS Inverter Under Gigahertz AC StressDing, Yaru / Liu, Wei / Qu, Yiming / Zhao, Liang / Zhao, Yi et al. | 2022
- P51-1
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Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrierGao, Z. / Chiocchetta, F. / De Santi, C. / Modolo, N. / Rampazzo, F. / Meneghini, M. / Meneghesso, G. / Zanoni, E. / Blanck, H. / Stieglauer, H. et al. | 2022
- P52-1
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Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS TransistorsMahajan, Bikram Kishore / Chen, Yen-Pu / Rivera, Ulisses Alberto Heredia / Rahimi, Rahim / Alam, Muhammad Ashraful et al. | 2022
- P53-1
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Accelerator-Based Thermal-Neutron Beam by Compact and Low-Cost Moderator for Soft-Error Evaluation in Semiconductor DevicesUemura, Taiki / Chung, Byungjin / Kim, Jegon / Shim, Hyewon / Chung, Shinyoung / Lee, Brandon / Choi, Jaehee / Ohnishi, Shota / Machida, Ken et al. | 2022
- P54-1
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Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error ReliabilityWatanabe, K. / Shimada, T. / Hirose, K. / Shindo, H. / Kobayashi, D. / Tanigawa, T. / Ikeda, S. / Shinada, T. / Koike, H. / Endoh, T. et al. | 2022
- P55-1
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Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETsDiwakar, Himanshu / Thakor, Karansingh / Mahapatra, Souvik et al. | 2022
- P56-1
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Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD StressChoudhury, Nilotpal / Ranjan, Ayush / Mahapatra, Souvik et al. | 2022
- P57-1
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Optimized LDMOS Offering for Power Management and RF ApplicationsCimino, S. / Singh, J. / Johnson, J. B. / Zheng, W. / Chen, Y. / Liu, W. / Srinivasan, P. / Gonzales, O. / Hauser, M. / Koskinen, M. et al. | 2022
- P58-1
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Reverse Body Bias Dependence of HCI Reliability in Advanced FinFETMahmud, Md Iqbal / Ranjan, Rakesh / Lee, Ki-Don / Perepa, Pavitra Ramadevi / Dongkyun Kwon, Caleb / Choo, Seungjin / Choi, Kihyun et al. | 2022
- P59-1
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Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device PerformancePirro, L. / Liebscher, P. / Brantz, C. / Kessler, M. / Herzog, H. / Zimmerhackl, O. / Jain, R. / Ebrand, E. / Gebauer, K. / Otto, M. et al. | 2022
- P60-1
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SiGe Gate-All-around Nanosheet ReliabilityZhou, Huimei / Wang, Miaomiao / Bao, Ruqiang / Durfee, Curtis / Qin, Liqiao / Zhang, Jingyun et al. | 2022
- P61-1
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Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layerAlessandrino, S. / Carbone, B. / Cordiano, F. / Mazza, B. / Russo, A. / Coco, W. / Boscaglia, M. / Salvo, A. Di / Lombardo, A. / Scarcella, D. et al. | 2022
- P62-1
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Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and TemperaturesMancini, Stephen A. / Yup Jang, Seung / Chen, Zeyu / Kim, Dongyoung / Lynch, Justin / Liu, Yafei / Raghothamachar, Balaji / Kang, Minseok / Agarwal, Anant / Mahadik, Nadeemullah et al. | 2022
- P63-1
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Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETsSenzaki, Junji / Kosugi, Ryoji / Masumoto, Keiko / Mitani, Takeshi / Kuroiwa, Takeharu / Yamaguchi, Hiroshi et al. | 2022
- P64-1
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Characteristic Degradation of Power MOSFETs by X-Ray Irradiation and Their RecoveryShiozaki, Masato / Sato, Takashi et al. | 2022
- P65-1
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Defects in 4H-SiC epilayers affecting device yield and reliabilityStahlbush, Robert / Mahadik, Nadeemullah / Bonanno, Peter / Soto, Jake / Odekirk, Bruce / Sung, Woongje / Agarwal, Anant et al. | 2022
- P66-1
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Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS CapacitorsTerao, Yutaka / Hosoi, Takuji / Kobayashi, Takuma / Shimura, Takayoshi / Watanabe, Heiji et al. | 2022