Effective Concentration Profile: Mechanism of Gate Field-Plate Assistant Effect in SOI Lateral Power Devices (Englisch)
Freier Zugriff
- Neue Suche nach: Zhang, Jun
- Weitere Informationen zu Zhang, Jun:
- https://orcid.org/0000-0002-5688-295X
- Neue Suche nach: Guo, Yu-Feng
- Weitere Informationen zu Guo, Yu-Feng:
- https://orcid.org/0000-0002-1490-986X
- Neue Suche nach: Pan, David Z.
- Weitere Informationen zu Pan, David Z.:
- https://orcid.org/0000-0002-5705-2501
- Neue Suche nach: Zhang, Jun
- Weitere Informationen zu Zhang, Jun:
- https://orcid.org/0000-0002-5688-295X
- Neue Suche nach: Guo, Yu-Feng
- Weitere Informationen zu Guo, Yu-Feng:
- https://orcid.org/0000-0002-1490-986X
- Neue Suche nach: Pan, David Z.
- Weitere Informationen zu Pan, David Z.:
- https://orcid.org/0000-0002-5705-2501
In:
IEEE Transactions on Electron Devices
;
65
, 10
;
4476-4482
;
2018
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Effective Concentration Profile: Mechanism of Gate Field-Plate Assistant Effect in SOI Lateral Power Devices
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Beteiligte:
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Erschienen in:IEEE Transactions on Electron Devices ; 65, 10 ; 4476-4482
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.10.2018
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Format / Umfang:1321068 byte
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 65, Ausgabe 10
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Table of contents| 2018
- 4034
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Guest Editorial Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor DevicesYoon, Youngki / Das, Saptarshi / Esseni, David / De Vittorio, David / Bhat, Navakanta / Muneta, Iriya / Liang, Gengchiau / Schwierz, Frank / Moshkalev, Stanislav A. et al. | 2018
- 4034
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Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor DevicesBhat, N. et al. | 2018
- 4040
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CVD Technology for 2-D Materials (Invited Paper)Shen, P.-C. / Lin, Y. / Wang, H. / Park, J.-H. / Leong, W. S. / Lu, A.-Y. / Palacios, T. / Kong, J. et al. | 2018
- 4040
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CVD Technology for 2-D MaterialsShen, Pin-Chun / Lin, Yuxuan / Wang, Haozhe / Park, Ji-Hoon / Leong, Wei Sun / Lu, Ang-Yu / Palacios, Tomas / Kong, Jing et al. | 2018
- 4053
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Investigating Laser-Induced Phase Engineering in MoS2 TransistorsPapadopoulos, Nikos / Island, Joshua O. / van der Zant, Herre S. J. / Steele, Gary A. et al. | 2018
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Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman SpectroscopyDing, Li / Ukhtary, Muhammad Shoufie / Chubarov, Mikhail / Choudhury, Tanushree H. / Zhang, Fu / Yang, Rui / Zhang, Ao / Fan, Jonathan A. / Terrones, Mauricio / Redwing, Joan M. et al. | 2018
- 4068
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Gate-Tuned Temperature in a Hexagonal Boron Nitride-Encapsulated 2-D Semiconductor DeviceLi, Yi / Ye, Fan / Xu, Jie / Zhang, Wei / Feng, Philip X.-L. / Zhang, Xian et al. | 2018
- 4073
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Contacting and Gating 2D Nanomaterials (Invited Paper)Cheng, Z. / Price, K. / Franklin, A. D. et al. | 2018
- 4073
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Contacting and Gating 2-D NanomaterialsCheng, Zhihui / Price, Katherine / Franklin, Aaron D. et al. | 2018
- 4084
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Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS2 TransistorsAlharbi, Abdullah / Shahrjerdi, Davood et al. | 2018
- 4084
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Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS~2 Transistors (Invited Paper)Alharbi, A. / Shahrjerdi, D. et al. | 2018
- 4093
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Mobility Anisotropy in Black Phosphorus MOSFETs With HfO~2 Gate Dielectrics (Invited Paper)Haratipour, N. / Liu, Y. / Wu, R. J. / Namgung, S. / Ruden, P. P. / Mkhoyan, K. A. / Oh, S.-H. / Koester, S. J. et al. | 2018
- 4093
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Mobility Anisotropy in Black Phosphorus MOSFETs With HfO2 Gate DielectricsHaratipour, Nazila / Liu, Yue / Wu, Ryan J. / Namgung, Seon / Ruden, P. Paul / Mkhoyan, K. Andre / Oh, Sang-Hyun / Koester, Steven J. et al. | 2018
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Wafer-Scale Fabrication of Recessed-Channel PtSe2 MOSFETs With Low Contact Resistance and Improved Gate ControlLi, Lei / Xiong, Kuanchen / Marstell, Roderick J. / Madjar, Asher / Strandwitz, Nicholas C. / Hwang, James C. M. / McEvoy, Niall / McManus, John B. / Duesberg, Georg S. / Goritz, Alexander et al. | 2018
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2-D Layered Materials for Next-Generation Electronics: Opportunities and ChallengesCao, Wei / Jiang, Junkai / Xie, Xuejun / Pal, Arnab / Chu, Jae Hwan / Kang, Jiahao / Banerjee, Kaustav et al. | 2018
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2-D Layered Materials for Next-Generation Electronics: Opportunities and Challenges (Invited Paper)Cao, W. / Jiang, J. / Xie, X. / Pal, A. / Chu, J. H. / Kang, J. / Banerjee, K. et al. | 2018
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Complementary Black Phosphorus Nanoribbons Field-Effect Transistors and Circuits (Invited Paper)Feng, X. / Wang, L. / Huang, X. / Chen, L. / Ang, K.-W. et al. | 2018
- 4122
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Complementary Black Phosphorus Nanoribbons Field-Effect Transistors and CircuitsFeng, Xuewei / Wang, Lin / Huang, Xin / Chen, Li / Ang, Kah Wee et al. | 2018
- 4129
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All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge ContactsPandey, Himadri / Shaygan, Mehrdad / Sawallich, Simon / Kataria, Satender / Wang, Zhenxing / Noculak, Achim / Otto, Martin / Nagel, Michael / Negra, Renato / Neumaier, Daniel et al. | 2018
- 4129
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All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts (Invited Paper)Pandey, H. / Shaygan, M. / Sawallich, S. / Kataria, S. / Wang, Z. / Noculak, A. / Otto, M. / Nagel, M. / Negra, R. / Neumaier, D. et al. | 2018
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Low-Frequency Noise in Supported and Suspended MoS2 TransistorsKaushik, Naveen / Ghosh, Sayantan / Lodha, Saurabh et al. | 2018
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Low-Frequency Noise in Supported and Suspended MoS~2 Transistors (Invited Paper)Kaushik, N. / Ghosh, S. / Lodha, S. et al. | 2018
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Esaki Diodes Based on 2-D/3-D HeterojunctionsXu, Kai / Cai, Yuhang / Zhu, Wenjuan et al. | 2018
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Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance LimitsDong, Zhipeng / Zhao, Huan / DiMarzio, Don / Han, Myung-Geun / Zhang, Lihua / Tice, Jesse / Wang, Han / Guo, Jing et al. | 2018
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Modeling of Electron Devices Based on 2-D Materials (Invited Paper)Marin, E. G. / Perucchini, M. / Marian, D. / Iannaccone, G. / Fiori, G. et al. | 2018
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Modeling of Electron Devices Based on 2-D MaterialsMarin, E. G. / Perucchini, M. / Marian, D. / Iannaccone, G. / Fiori, G. et al. | 2018
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Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels (Invited Paper)Szabó, Á. / Klinkert, C. / Campi, D. / Stieger, C. / Marzari, N. / Luisier, M. et al. | 2018
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The Figure of Merit of a Semiconductor Power Electronics SwitchShenai, Krishna et al. | 2018
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Investigation of Geometry Dependence of Thermal Resistance and Capacitance in RF SOI MOSFETsChen, Zhanfei / Sun, Lingling / Liu, Jun / Su, Guodong / Zhou, Wenyong et al. | 2018
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Modeling of Effective Thermal Resistance in Sub-14-nm Stacked Nanowire and FinFETsJain, Ishita / Gupta, Anshul / Hook, Terence B. / Dixit, Abhisek et al. | 2018
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Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3 and GeOx ILs Using Ultrafast Charge Trap–Detrap TechniquesJoishi, Chandan / Ghosh, Sayantan / Kothari, Shraddha / Parihar, Narendra / Mukhopadhyay, Subhadeep / Mahapatra, Souvik / Lodha, Saurabh et al. | 2018
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A $\Pi$ -Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTsLatorre Rey, Alvaro D. / Albrecht, John D. / Saraniti, Marco et al. | 2018
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A Π-Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTsLatorre-Rey, A. D. / Albrecht, J. D. / Saraniti, M. et al. | 2018
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A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETsJi, Dong / Li, Wenwen / Chowdhury, Srabanti et al. | 2018
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Compressed Sensing With Approximate Message Passing Using In-Memory ComputingLe Gallo, Manuel / Sebastian, Abu / Cherubini, Giovanni / Giefers, Heiner / Eleftheriou, Evangelos et al. | 2018
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Delta Doping in HgCdTe-Based Unipolar Barrier PhotodetectorsAkhavan, Nima Dehdashti / Umana-Membreno, Gilberto Armando / Gu, Renjie / Antoszewski, Jarek / Faraone, Lorenzo et al. | 2018
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Comprehensive Predictive Device Modeling and Analysis of a Si/Si1-xGex Multiquantum-Well DetectorShafique, Atia / Abbasi, Shahbaz / Ceylan, Omer / Yamamoto, Yuji / Baristiran Kaynak, Canan / Kaynak, Mehmet / Gurbuz, Yasar et al. | 2018
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Novel Nanofabricated Mo Field-Emitter Array for Low-Cost and Large-Area ApplicationLi, Nannan / Yan, Fei / Pang, Shucai / Zeng, Baoqing / Luo, Yi et al. | 2018
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A 3-D Device-Level Investigation of a Lag-Free PPD Pixel With a Capacitive Deep Trench Isolation as Shared Vertical Transfer GateAlaibakhsh, Hamzeh / Karami, Mohammad Azim et al. | 2018
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A Back-Illuminated Voltage-Domain Global Shutter Pixel With Dual In-Pixel StorageStark, Laurence / Raynor, Jeffrey M. / Lalanne, Frederic / Henderson, Robert K. et al. | 2018
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CMOS Single-Photon Avalanche Diode Pixel Design for a Gun Muzzle Flash Detection CameraKatz, A. / Vainstein, C. / Shoham, A. / Blank, T. / Leitner, T. / Fenigstein, A. / Birk, Y. / Nemirovsky, Y. et al. | 2018
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Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal PhotodetectorsZhao, Yiming / Donaldson, William Raymond et al. | 2018
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Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation AreaFujita, Ryusei / Tani, Kazuki / Konishi, Kumiko / Shima, Akio et al. | 2018
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Piecewise Linear Approximation for Extraction of JFET Resistance in SiC MOSFETYang, Tongtong / Huang, Runhua / Bai, Song et al. | 2018
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Lateral Charge Distribution and Recovery of Dynamic RON in AlGaN/GaN HEMTsWaller, W. M. / Gajda, M. / Pandey, S. / Uren, M. J. / Kuball, M. et al. | 2018
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Static and Dynamic Effects of the Incomplete Ionization in Superjunction DevicesDonato, Nazareno / Udrea, Florin et al. | 2018
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Effective Concentration Profile: Mechanism of Gate Field-Plate Assistant Effect in SOI Lateral Power DevicesZhang, Jun / Guo, Yu-Feng / Pan, David Z. et al. | 2018
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Optimization of SiC Power p-i-n Diode Parameters by Proton IrradiationHazdra, Pavel / Popelka, Stanislav / Schoner, Adolf et al. | 2018
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Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si ContactsMao, Shujuan / Wang, Guilei / Xu, Jing / Luo, Xue / Zhang, Dan / Duan, Ningyuan / Liu, Shi / Wang, Wenwu / Chen, Dapeng / Li, Junfeng et al. | 2018
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ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room TemperatureShen, Mei / Muneshwar, Triratna P. / Cadien, Kenneth C. / Tsui, Ying Yin / Barlage, Douglas W. et al. | 2018
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Analysis on Self-Heating Effects in Three-Stacked Nanoplate FETKim, Hyunsuk / Son, Dokyun / Myeong, Ilho / Kang, Myounggon / Jeon, Jongwook / Shin, Hyungcheol et al. | 2018
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- 4659
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Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory ComputingWang, Zhuo-Rui / Li, Yi / Su, Yu-Ting / Zhou, Ya-Xiong / Cheng, Long / Chang, Ting-Chang / Xue, Kan-Hao / Sze, Simon M. / Miao, Xiang-shui et al. | 2018
- 4667
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Complementary Skyrmion Racetrack Memory Enables Voltage-Controlled Local Data Update FunctionalityChen, Xing / Kang, Wang / Zhu, Daoqian / Zhang, Xichao / Lei, Na / Zhang, Youguang / Zhou, Yan / Zhao, Weisheng et al. | 2018
- 4674
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Impact of Metal Nanocrystal Size and Distribution on Resistive Switching Parameters of Oxide-Based Resistive Random Access MemoriesLiu, Chang / Wang, Lai-Guo / Qin, Kang / Cao, Yan-Qiang / Zhang, Xue-Jin / Wu, Di / Li, Ai-Dong et al. | 2018
- 4679
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Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron–Hole Bilayer Tunneling Field-Effect TransistorPadilla, Jose L. / Medina-Bailon, Cristina / Marquez, Carlos / Sampedro, Carlos / Donetti, Luca / Gamiz, Francisco / Ionescu, Adrian Mihai et al. | 2018
- 4687
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Novel Cascadable Magnetic Majority Gates for Implementing Comprehensive Logic FunctionsLi, Xin / Song, Min / Xu, Nuo / Luo, Shijiang / Zou, Qiming / Zhang, Shuai / Hong, Jeongmin / Yang, Xiaofei / Min, Tai / Han, Xiufeng et al. | 2018
- 4694
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The Understanding of SiNR and GNR TFETs for Analog and RF Application With Variation of Drain-Doping Molar FractionMech, Bhubon Chandra / Koley, Kalyan / Kumar, Jitendra et al. | 2018
- 4701
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Dopingless Tunnel Field-Effect Transistor With Oversized Back Gate: Proposal and InvestigationRaushan, Mohd Adil / Alam, Naushad / siddiqui, Mohammad Jawaid et al. | 2018
- 4709
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Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET SimulationKumar, Kunal / Hsieh, Yu-Feng / Liao, Jen-Hong / Kao, Kuo-Hsing / Wang, Yeong-Her et al. | 2018
- 4716
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Implementation of Convolutional Kernel Function Using 3-D TiOx Resistive Switching Devices for Image ProcessingKwak, Myonghoon / Park, Jaesung / Woo, Jiyong / Hwang, Hyunsang et al. | 2018
- 4719
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Switch-OFF Avalanche-Breakdown-Induced Electrical Degradations of RF-LDMOS Transistor for SMPAs ApplicationsLiu, Siyang / Yang, Hanqi / Li, Zhichao / Sun, Weifeng et al. | 2018
- 4724
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Analytical Modeling of Gate-Stack DG-MOSFET in Subthreshold Regime by Green’s Function ApproachNandi, Ashutosh / Pandey, Nilesh / Dasgupta, Sudeb et al. | 2018
- 4729
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A High Bidirectional Blocking Capability Insulated-Gate Bipolar Transistor With Ultralow LossLuo, Xiaorong / Liu, Qing / Wei, Jie / Huang, Linhua / Sun, Tao / Li, Zhaoji / Zhang, Bo et al. | 2018
- 4734
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices| 2018
- 4735
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2019 IEEE International Reliability Physics Symposium| 2018
- 4736
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3rd Electron Devices Technology and Manufacturing (EDTM) Conference 2019| 2018
- C1
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Front cover| 2018
- C2
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IEEE Transactions on Electron Devices publication information| 2018
- C3
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IEEE Transactions on Electron Devices information for authors| 2018