Circuit Failure Prediction for Robust System Design (Englisch)
- Neue Suche nach: Mitra, Subhasish
- Neue Suche nach: Mitra, Subhasish
In:
2008 IEEE International Integrated Reliability Workshop Final Report
;
1-51
;
2008
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Circuit Failure Prediction for Robust System Design
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Beteiligte:Mitra, Subhasish ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.10.2008
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Format / Umfang:2415020 byte
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 0
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Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability (NBTI)Benard, Christelle / Ogier, Jean-Luc / Goguenheim, Didier et al. | 2008
- 0
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Total Recovery of Defects Generated by Negative Bias Temperature Instability (NBTI)Benard, Christelle / Ogier, Jean-Luc / Goguenheim, Didier et al. | 2008
- 145
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Circuit Failure Prediction for Robust System Design in Scaled CMOSMitra, Subhasish et al. | 2008
- 1
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2008 IIRW Attendance List| 2008
- 1
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The effect of recovery on NBTI characterization of thick non-nitrided oxidesReisinger, H. / Vollertsen, R.P. / Wagner, P.J. / Huttner, T. / Martin, A. / Aresu, S. / Gustin, W. / Grasser, T. / Schlunder, C. et al. | 2008
- 1
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Towards Understanding Negative Bias Temperature InstabilityGrasser, Tibor et al. | 2008
- 1
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Electrical characterization techniques for the high-κ era| 2008
- 1
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Zero Defects Quality and Reliability Challenges for Growing MarketsDakshinamoorthy, S. et al. | 2008
- 1
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advert| 2008
- 1
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Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETsIoannou, Dimitris P. / Mittl, Steve / LaRosa, Giuseppe et al. | 2008
- 1
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JEDEC - Tutorial; Everything you wanted to know But were afraid to askStrong, Alvin et al. | 2008
- 1
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Stress Characterization for Stress-Induced Voiding in Cu/Low K Interconnects with Geometry and Upper Cap Layer DependencesLin, Mingte / Liang, James W. / Su, K. C. et al. | 2008
- 1
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Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate StacksSouthwick, Richard G. / Reed, J. / Buu, C. / Bui, H. / Butler, R. / Bersuker, G. / Knowlton, W.B. et al. | 2008
- 1
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Investigation of GIDL current Injection Disturb Mechanism in two-transistor-eNVM memory devicesKim, Sung-Rae / Han, K. J. / Lee, Junmin / Lee, P. Y. / Zhou, Tony / Lee, Kin-Sing / Liu, Patty / Tseng, Huan-Chung / Cronguist, Brian et al. | 2008
- 1
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Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Ta2O5 MIM CapacitorsMartinez, V. / Besset, C. / Monsieur, F. / Montes, L. / Ghibaudo, G. et al. | 2008
- 1
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Circuit Failure Prediction for Robust System DesignMitra, Subhasish et al. | 2008
- 1
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eFuse Design and ReliabilityTonti, W.R. et al. | 2008
- 1
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Reliability for "Future" DevicesHaensch, Wilfried et al. | 2008
- 1
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Coupled Approach for Reliability Study of Fully Self Aligned SiGe:C 250GHz HBTsDiop, M. / Revil, N. / Marin, M. / Monsieur, F. / Schwartzmann, T. / Ghibaudo, G. et al. | 2008
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The Effect of the Subthreshold Slope Degradation on NBTI Device CharacterizationBrisbin, D. / Chaparala, P. et al. | 2008
- 1
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The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETsCampbell, J.P. / Qin, J. / Cheung, K.P. / Yu, L. / Suehle, J.S. / Oates, A. / Sheng, K. et al. | 2008
- 1
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Breaker pages| 2008
- 1
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Effect of substrate hot carrier stress on high-k gate stackPark, H. / Bersuker, G. / Kang, C. Y. / Young, C. / Tseng, H-H / Jammy, R. et al. | 2008
- 1
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Geometry effects on the NBTI degradation of PMOS transistorsMath, Gaetan / Benard, Christelle / Ogier, Jean-Luc / Goguenheim, Didier et al. | 2008
- 1
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Effect of Threshold-Voltage Instability on SiC DMOSFET ReliabilityLelis, Aivars / Habersat, D. / Green, R. / Goldsman, N. et al. | 2008
- 1
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Negative Bias Temperature Stress on PFETs within fast Wafer Level Reliability MonitoringVollertsen, R.-P. / Reisinger, H. / Schlunder, C. et al. | 2008
- 1
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Interface Traps in Silicon Carbide MOSFETsCochrane, C.J. / Lenahan, P. M. / Lelis, A.J. et al. | 2008
- 1
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Reliability Guard Band Reduction by Differential Targeting of pMOS Gate Oxide ThicknessGeilenkeuser, R. / Wieczorek, K. / Trentzsch, M. / Graetsch, F. / Bayha, B. / Samohvalov, V. / Paetzold, T. / Schink, T. et al. | 2008
- 1
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The Influence Of Complex Geometries and Stress Non-Uniformity On ReliabilityAal, A. et al. | 2008
- 1
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Breakdown mechanism for the thin EOT Dy2O3/HfO2 dielectricsLee, Tackhwi / Park, S. / Lee, Jack / Banerjee, Sanjay K. et al. | 2008
- 1
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Study of Transistor and Product NBTI Lifetime DistributionsQin, Jin / Yan, Baoguang / Shoshany, Yossi / Roy, Druker / Rahamim, Hezi / Marom, Haim / Bernstein, Joseph B. et al. | 2008
- 1
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Quantitative reliability assessment of Plasma Induced Damage on product wafers with fast WLR measurementsMartin, Andreas / Bukethal, Christoph / Ryden, Karl-Henrik / Baier, Sascha / Schwerd, Markus et al. | 2008
- 1
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Copper line topology impact of SiOCH low-k dielectric reliability in advanced 45nm technology node and beyondVilmay, M. / Roy, D. / Monget, C. / Volpi, F. / Chaix, J-M. et al. | 2008
- 1
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Ageing under illumination of MOS transistors for active pixel sensors (APS) applicationsLopez, Diana / Monsieur, Frederic / Balestra, Francis et al. | 2008
- 1
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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and HK Gate StacksGrasser, Tibor / Kaczer, Ben / Aichinger, Thomas / Goes, Wolfgang / Nelhiebel, Michael et al. | 2008
- 12
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Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability ReliabilityBenard, Christelle / Ogier, Jean-Luc / Goguenheim, Didier et al. | 2008
- 16
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Copper line topology impact on the reliability of low-k SIOCH for the 45nm technology node and beyondVilmay, M. / Roy, D. / Monget, C. / Volpi, F. / Chaix, J-M. et al. | 2008
- 21
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Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Tantalum Pentoxide Metal-Insulator-Metal (MIM) CapacitorsMartinez, Vincent / Besset, Carine / Monsieur, Frederic / Montes, Laurent / Ghibaudo, Gerard et al. | 2008
- 48
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Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate StacksSouthwick, Richard G. / Reed, J. / Buu, C. / Bui, H. / Butler, R. / Bersuker, G. / Knowlton, W.B. et al. | 2008
- 58
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Breakdown mechanism for the thin EOT Dy2O3/HfO2 dielectricLee, Tackhwi / Park, Sung Il / Lee, Jack C / Banerjee, Sanjay K. et al. | 2008
- 91
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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate StacksGrasser, Tibor / Kaczer, Ben / Aichinger, Thomas / Goes, Wolfgang / Nelhiebel, Michael et al. | 2008
- 110
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Repeatability and Stress Level Dependence on ESD-CDM Testing for Microelectronic ComponentsSatirakul, Yuparwadee / Butngam, Tanawat / Phunyapinuant, Surapol et al. | 2008
- 114
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Concept and implementation of an in-situ test structure for HTGS reliability testing of PowerFETs on a wafer level basisBaier, Sascha et al. | 2008
- 118
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Fully Automatical Test and Qualification System for a High Endurance Embedded EEPROM ModuleFellner, Johannes / Schatzberger, Gregor / Wiesner, Andreas et al. | 2008
- 121
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A Robust Single Event Upset Hardened Clock Distribution NetworkMallajosyula, Aahlad / Zarkesh-Ha, Payman et al. | 2008
- 125
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Reliability Simulation and Design Consideration of High Speed ADC CircuitsYan, Baoguang / Qin, Jin / Dai, Jun / Fan, Qingguo / Bernstein, Joseph B. et al. | 2008
- 129
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Dispersion and the Worst Case of Thermal Fatigue Life of Solder Joints in Vehicle Electronic DevicesMaruoka, Toshiaki / Yu, Qiang / Shibutani, Tadahiro / Miyauci, Hiroki et al. | 2008
- 133
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A Comparison Between V-Ramp TDDB Techniques For Reliability EvaluationAal, A. et al. | 2008
- 137
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An Electrically-Detected Magnetic Resonance Study of the Atomic-Scale Effects of Fluorine on the Negative Bias Temperature InstabilityRyan, J.T. / Lenahan, P.M. / Krishnan, A.T. / Krishnan, S. / Campbell, J.P. et al. | 2008
- 141
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Oxide Reliability of SiC MOS DevicesYu, Liangchun / Cheung, Kin P. / Campbell, Jason / Suehle, John S. / Sheng, Kuang et al. | 2008
- 145
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JEDEC OverviewStrong, Alvin et al. | 2008
- 145
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Measurement Issues for High-k Technology including NBTIYoung, Chadwin et al. | 2008
- 146
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Discussion Group (DG) summary: fast Wafer Level Reliability (fWLR) MonitoringMartin, Andreas et al. | 2008
- 150
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Discussion Group (DG) summary: NVM ReliabilityTao, Guoqiao / O'Shea, Peter J et al. | 2008
- 151
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Discussion Group (DG) summary: NBTIGrasser, Tibor et al. | 2008
- 152
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Discussion Group (DG) summary: Dielectric Electrical CharacterizationYoung, Chadwin / Southwick, Richard et al. | 2008
- 153
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Discussion Group (DG) summary: Product ReliabilityTurner, Drew et al. | 2008
- 154
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Biographies| 2008
- 157
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2008 IIRW Attendees| 2008
- C1
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Covers| 2008
- i
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2008 IEEE International Integrated Reliability Workshop Final Report| 2008
- ii
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Copyright page| 2008
- ii
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IIRW Board of Directors| 2008
- ii
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Management Committee| 2008
- ii
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Session Chairs| 2008
- iii
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contents| 2008
- vii
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Foreword| 2008
- xi
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First Call for Papers| 2008
- xii
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Paper and Poster Submission Instructions| 2008