High-Voltage Amorphous InGaZnO TFT With Al2O3 High- $k$ Dielectric for Low-Temperature Monolithic 3-D Integration (Englisch)
- Neue Suche nach: Yu, Ming-Jiue
- Neue Suche nach: Lin, Ruei-Ping
- Neue Suche nach: Chang, Yu-Hong
- Neue Suche nach: Hou, Tuo-Hung
- Weitere Informationen zu Hou, Tuo-Hung:
-
https://orcid.org/0000-0002-9686-7076
- Neue Suche nach: Yu, Ming-Jiue
- Neue Suche nach: Lin, Ruei-Ping
- Neue Suche nach: Chang, Yu-Hong
- Neue Suche nach: Hou, Tuo-Hung
- Weitere Informationen zu Hou, Tuo-Hung:
-
https://orcid.org/0000-0002-9686-7076
In:
IEEE Transactions on Electron Devices
;
63
, 10
;
3944-3949
;
2016
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:High-Voltage Amorphous InGaZnO TFT With Al2O3 High- $k$ Dielectric for Low-Temperature Monolithic 3-D Integration
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Beteiligte:Yu, Ming-Jiue ( Autor:in ) / Lin, Ruei-Ping ( Autor:in ) / Chang, Yu-Hong ( Autor:in ) / Hou, Tuo-Hung ( Autor:in )
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Erschienen in:IEEE Transactions on Electron Devices ; 63, 10 ; 3944-3949
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.10.2016
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Format / Umfang:1372463 byte
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 63, Ausgabe 10
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