On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects (Englisch)
- Neue Suche nach: Kaczer, B.
- Neue Suche nach: Amoroso, S. M.
- Neue Suche nach: Hussin, R.
- Neue Suche nach: Asenov, A.
- Neue Suche nach: Franco, J.
- Neue Suche nach: Weckx, P.
- Neue Suche nach: Roussel, Ph. J.
- Neue Suche nach: Rzepa, G.
- Neue Suche nach: Grasser, T.
- Neue Suche nach: Horiguchi, N.
- Neue Suche nach: Kaczer, B.
- Neue Suche nach: Amoroso, S. M.
- Neue Suche nach: Hussin, R.
- Neue Suche nach: Asenov, A.
- Neue Suche nach: Franco, J.
- Neue Suche nach: Weckx, P.
- Neue Suche nach: Roussel, Ph. J.
- Neue Suche nach: Rzepa, G.
- Neue Suche nach: Grasser, T.
- Neue Suche nach: Horiguchi, N.
In:
2016 IEEE International Integrated Reliability Workshop (IIRW)
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18-20
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2016
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects
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Beteiligte:Kaczer, B. ( Autor:in ) / Amoroso, S. M. ( Autor:in ) / Hussin, R. ( Autor:in ) / Asenov, A. ( Autor:in ) / Franco, J. ( Autor:in ) / Weckx, P. ( Autor:in ) / Roussel, Ph. J. ( Autor:in ) / Rzepa, G. ( Autor:in ) / Grasser, T. ( Autor:in ) / Horiguchi, N. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.01.2016
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Format / Umfang:801871 byte
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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BTI variability of SRAM cells under periodically changing stress profilesGiering, Kay-Uwe / Lange, Andre / Kaczer, Ben / Jancke, Roland et al. | 2016
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[Back matter]| 2016
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AC stress and standard cell aging characterization to enhance reliability coverage of logic circuitsHuang, Y.-C. / Hsu, L.-C. / Chou, W.-S. / Hsieh, M.-H. / Shih, K.-W. / Tseng, N.-H. / Pittu, R. B. / Wang, W. / Lee, Y.-H. et al. | 2016
- 8
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The sources of erase voltage variability in split-gate flash memory cell arraysTkachev, Yuri / Walls, James A. et al. | 2016
- 13
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Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devicesPuglisi, Francesco Maria et al. | 2016
- 18
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On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defectsKaczer, B. / Amoroso, S. M. / Hussin, R. / Asenov, A. / Franco, J. / Weckx, P. / Roussel, Ph. J. / Rzepa, G. / Grasser, T. / Horiguchi, N. et al. | 2016
- 21
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Time dependent junction degradation in FinFETHo, T.Y. / Joshi, K. / Lee, K.H. / Liao, P.J. / Shih, J.R. / Lee, Y.-H. et al. | 2016
- 24
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Layout Dependent Effect: Impact on device performance and reliability in recent CMOS nodesNdiaye, C. / Huard, V. / Bertholon, R. / Rafik, M. / Federspiel, X. / Bravaix, A. et al. | 2016
- 29
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SiC power device reliabilityGajewski, Donald A. / Hull, Brett / Lichtenwalner, Daniel J. / Ryu, Sei-Hyung / Bonelli, Eric / Mustain, Habib / Wang, Gangyao / Allen, Scott T. / Palmour, John W. et al. | 2016
- 35
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Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTsMeneghesso, Gaudenzio / Bisi, Davide / Rossetto, Isabella / Ruzzarin, Maria / Meneghini, Matteo / Zanoni, Enrico et al. | 2016
- 41
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Reduction of hot carrier degradation in high voltage n-channel LDMOS BCD (Bipolar-CMOS-DMOS) technologyHao, Jifa / Hahn, Daniel et al. | 2016
- 45
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Self-heating impact on TDDB in bulk FinFET devices: Uniform vs Non-uniform StressChbili, Z. / Kerber, A. et al. | 2016
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A physical manifestation of interfacial roughness pitfalls in assessing dielectric TDDB lifetimesSheng, Lieyi et al. | 2016
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Fast TDDB for early reliability monitoringLaRow, C. / Liu, Y. / Chbili, Z. / Gondal, A. et al. | 2016
- 57
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Effect of texture and elastic anisotropy of copper microstructure on reliabilityBasavalingappa, Adarsh / Shen, Ming Y. / Lloyd, James R. et al. | 2016
- 61
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Vth is dead - long live the threshold voltageHillebrand, Theodor / Taddiken, Maike / Tscherkaschin, Konstantin / Paul, Steffen / Peters-Drolshagen, Dagmar et al. | 2016
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Humidity and polarity influence on MIM PZT capacitor degradation and breakdownWang, Jiahui / Salm, Cora / Houwman, Evert / Nguyen, Minh / Schmitz, Jurriaan et al. | 2016
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Reliability of integrated resistors and the influence of WLCSP bakeJose, S. / Bisschop, J. / Girault, V. / Marwijk, L. v. / Zhang, J. / Nath, S. et al. | 2016
- 73
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AC TDDB analysis for circuit-level gate oxide wearout reliability assessmentKopley, T.E. / O'Brien, K. / Chang, W.-C. et al. | 2016
- 77
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1/f Noise analysis of Hafnium Oxide based ReRAM devices using ac + dc measurement techniqueMahmud, Niaz / Narasimham, Avyaya J. / Lloyd, J. R. et al. | 2016
- 80
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Intrinsic reliability characterization for stand-alone MEMS switch technologyCeccarelli, Edoardo Maria / Heffernan, Colm / Browne, John / Fitzgerald, Padraig et al. | 2016
- 83
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Improved analysis of NBTI relaxation behavior based on fast I–V measurementNouguier, D. / Ndiaye, C. / Ghibaudo, G. / Federspiel, X. / Rafik, M. / Roy, D. et al. | 2016
- 87
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Increasing velocity of wafer level reliability characterization: Novel approaches and limitationsBittel, B. / Vadlamani, S. / Ramey, S. / Padiyar, S. et al. | 2016
- 91
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Study on off-state hot carrier degradation and recovery of NMOSFET in SWD circuits of DRAMKim, Kangil / Chung, Ilsub / Sun, Duan / Rhe, Sangjae / Kim, Ilgweon / Hwang, Hongsun / Cho, Kangyong / Jin, Gyoyoung et al. | 2016
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On the effect of interface traps on the carrier distribution function during hot-carrier degradationTyaginov, S.E. / Makarov, A. / Jech, M. / Franco, J. / Sharma, P. / Kaczer, B. / Grasser, T. et al. | 2016
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Radiation induced leakage currents in dense and porous low-k dielectricsWaskiewicz, Ryan J. / Mutch, Michael J. / Lenahan, Patrick M. / King, Sean W. et al. | 2016
- 103
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Bias temperature instability and its correlation to flicker (1/f) noise in FinFETsDing, Y. M. / Misra, D. / Srinivasan, P. et al. | 2016
- i
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[Front matter]| 2016
- xxxii
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Author index| 2016
- xxxv
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[Back matter photos]| 2016