Impact of pre-amorphization for the reduction of contact resistance using laser thermal process (Englisch)
- Neue Suche nach: Yamamoto, T.
- Neue Suche nach: Goto, K.
- Neue Suche nach: Kubo, T.
- Neue Suche nach: Wang, Y.
- Neue Suche nach: Lin, T.
- Neue Suche nach: Talwar, S.
- Neue Suche nach: Kase, M.
- Neue Suche nach: Sugii, T.
- Neue Suche nach: Yamamoto, T.
- Neue Suche nach: Goto, K.
- Neue Suche nach: Kubo, T.
- Neue Suche nach: Wang, Y.
- Neue Suche nach: Lin, T.
- Neue Suche nach: Talwar, S.
- Neue Suche nach: Kase, M.
- Neue Suche nach: Sugii, T.
In:
Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.
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27-30
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2002
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ISBN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Impact of pre-amorphization for the reduction of contact resistance using laser thermal process
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Beteiligte:Yamamoto, T. ( Autor:in ) / Goto, K. ( Autor:in ) / Kubo, T. ( Autor:in ) / Wang, Y. ( Autor:in ) / Lin, T. ( Autor:in ) / Talwar, S. ( Autor:in ) / Kase, M. ( Autor:in ) / Sugii, T. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.01.2002
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Format / Umfang:194721 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Extended Abstracts of the Third International Workshop on Junction Technology. IWJT (IEEE Cat. No.02EX615)| 2002
- 1
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Detailed modeling of source/drain parasitics and their impact on MOSFETs scalingSeong-Dong Kim, / Woo, J.C.S. et al. | 2002
- 5
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SOI formation by light ion implantation and annealing in oxygen including atmosphereOgura, A. et al. | 2002
- 9
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Doping accuracy requirements of USJ processes for advanced sub-100 nm CMOS devicesMurrell, A. / Al-Bayati, A. / Graoui, H. / Spear, J. / Ito, H. / Matsunaga, Y. / Ohuchi, K. / Adachi, K. / Miyashita, K. / Nakayama, T. et al. | 2002
- 9
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LE doping and USJ BKM (Tentative)Murrell, A. et al. | 2002
- 15
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The angle control within a wafer in high-energy implanter of batch typeKawasaki, Y. / Yamashita, T. / Kitazawa, M. / Kuroi, T. / Ohno, Y. / Yoneda, M. et al. | 2002
- 19
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The drain current asymmetry of 130 nm MOSFETs due to extension implant shadowing originated by mechanical angle error in high current implanterYoneda, K. / Niwayama, M. et al. | 2002
- 23
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Flash lamp annealing technology for ultra-shallow junction formationIto, T. / Suguro, K. / Tamura, M. / Taniguchi, T. / Ushiku, Y. / Iinuma, T. / Itani, T. / Yoshioka, M. / Owada, T. / Imaoka, Y. et al. | 2002
- 27
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Impact of pre-amorphization for the reduction of contact resistance using laser thermal processYamamoto, T. / Goto, K. / Kubo, T. / Wang, Y. / Lin, T. / Talwar, S. / Kase, M. / Sugii, T. et al. | 2002
- 31
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Influence of pulse duration on KrF excimer laser annealing process for ultra shallow junction formationKagawa, K. / Niwatsukino, Y. / Matsuno, A. / Shibahara, K. et al. | 2002
- 35
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Formation of low-resistive ultra-shallow n+/p junction by heat-assisted excimer laser annealingKurobe, K. / Ishikawa, Y. / Kagawa, K. / Niwatsukino, Y. / Matusno, A. / Shibahara, K. et al. | 2002
- 37
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Helicon wave plasma doping systemSasaki, Y. / Mizuno, B. / Akama, S. / Higaki, R. / Tsutsui, K. / Ohomi, S. / Iwai, H. et al. | 2002
- 39
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Gas phase doping at room temperatureSasaki, Y. / Mizuno, B. / Akama, S. / Higaki, R. / Tsutsui, K. / Ohomi, S. / Iwai, H. et al. | 2002
- 41
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Characterization of materials critical to high-speed silicon devices using secondary ion mass spectrometryMagee, C.W. et al. | 2002
- 43
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Gate insulating layer impact on the extension profile of the sub-50 nm p-MOSFETFukutome, H. / Arimoto, H. / Watanabe, S. / Ohta, H. / Hori, M. et al. | 2002
- 47
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Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMSYoshikawa, S. / Toujou, F. / Homma, Y. / Takenaka, H. / Hayashi, S. / Inoue, M. / Goto, K. / Shimizu, R. et al. | 2002
- 49
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Photoluminescence and ab initio study of {311} defect nucleation in SiTsuji, H. / Kim, R. / Hirose, T. / Furuhashi, M. / Tachi, M. / Taniguchi, K. et al. | 2002
- 51
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Source/drain elevation process using implantation enhanced selective etchingHuda, M.Q. / Sakamoto, K. / Tanoue, H. et al. | 2002
- 55
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Elevated source/drain engineering with smooth surface morphology for ultrathin-SOI CMOSSugihara, K. / Nakahata, T. / Matsumoto, T. / Maeda, S. / Maegawa, S. / Ota, K. / Sayama, H. / Oda, H. / Eimori, T. / Abe, Y. et al. | 2002
- 59
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Ultra shallow sidewall GaAs tunnel junctions implemented with molecular layer epitaxyOhno, T. / Oyama, Y. / Tezuka, K. / Suto, K. / Nishizawa, J. et al. | 2002
- 63
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SOI NMOSFETs with SiGe elevated S/D and Ni silicideHoon Choi, / Hyuckjae Oh, / JeoungChill Shim, / Sakaguchi, T. / Kurino, H. / Koyanagi, M. et al. | 2002
- 63
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SOI NMOSFETs with SiGe Elevated S/D and NiChoi, H. / Oh, H. / Shim, J. C. / Sakaguchi, T. / Kurino, H. / Koyanagi, M. et al. | 2002
- 65
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Suppression of migration during low pressure annealing for selective epitaxial growth on ultra-thin SOIMizushima, I. / Sato, T. / Miyano, K. / Tsunashima, Y. et al. | 2002
- 65
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Suppression of Migration During Low Temperature Annealing for Selective Epitaxial Growth on Ultra-Thin SOIMizushima, I. / Sato, T. / Miyano, K. / Tsunashima, Y. et al. | 2002
- 67
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Silicide technology for USJ in next technology nodeSuguro, K. / Iinuma, T. / Izuha, M. / Ohuchi, K. / Hokazono, A. / Miyano, K. / Mizushima, I. et al. | 2002
- 71
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Improvement in morphology of nickel silicide film with carbonNakatsuka, O. / Tsuchiya, Y. / Sakai, A. / Zaima, S. / Murota, J. / Yasuda, Y. et al. | 2002
- 73
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Influence of a small amount of oxygen during rapid thermal processing on cobalt salicide at 65 nm gate lengthKanda, Y. / Ogura, M. / Honda, K. / Tsutsumi, S. / Maekawa, K. / Kobayashi, K. / Yoneda, M. et al. | 2002
- 75
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Atomistic impurity diffusion simulation of shallow junction fabrication processes and dopant-induced intrinsic fluctuationsHane, M. / Ikezawa, T. et al. | 2002
- 81
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TCAD simulation in development and fabrication of deep-sub-/spl mu/m devicesErlebach, A. / Zechner, C. / Al-Bayati, A. et al. | 2002
- 81
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TCAD Simulation in Development and Fabrication of Deep-Sub-mum DevicesErlebach, A. / Zechner, C. / Al-Bayati, A. et al. | 2002
- 85
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Low temperature activation of ion implanted dopants: a reviewBorland, J.O. et al. | 2002
- 89
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As and Sb diffusion profiles in thin silicon-on-insulator wafersShibata, Y. / Ichimura, M. / Arai, E. et al. | 2002
- 91
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Bulk CMOS technology for SOCDiaz, C.H. et al. | 2002
- 97
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Nanocleaving: an enabling technology for ultra-thin SOICurrent, M.I. et al. | 2002
- 103
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S/D extension formation utilizing offset spacer for 65 nm node high performance CMOSAdachi, K. / Ohuchi, K. / Toyoshima, Y. et al. | 2002
- 105
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55nm gate CMOS technology using sub-keV ion implantation without through surface oxideSayama, H. / Miyoshi, H. / Kawasaki, Y. / Ota, K. / Oda, H. / Kuroi, T. / Eimori, T. / Morimmo, H. / Nakauka, H. / Fuse, G. et al. | 2002
- 107
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SOI technology for future SoCInoue, Y. et al. | 2002