Top-Gate Staggered a-IGZO TFTs Adopting the Bilayer Gate Insulator for Driving AMOLED (Englisch)
- Neue Suche nach: Lin, Chang-Yu
- Neue Suche nach: Chien, Chih-Wei
- Neue Suche nach: Wu, Cheng-Han
- Neue Suche nach: Hsieh, Hsing-Hung
- Neue Suche nach: Wu, Chung-Chih
- Neue Suche nach: Yeh, Yung-Hui
- Neue Suche nach: Cheng, Chun-Cheng
- Neue Suche nach: Lai, Chih-Ming
- Neue Suche nach: Yu, Ming-Jiue
- Neue Suche nach: Lin, Chang-Yu
- Neue Suche nach: Chien, Chih-Wei
- Neue Suche nach: Wu, Cheng-Han
- Neue Suche nach: Hsieh, Hsing-Hung
- Neue Suche nach: Wu, Chung-Chih
- Neue Suche nach: Yeh, Yung-Hui
- Neue Suche nach: Cheng, Chun-Cheng
- Neue Suche nach: Lai, Chih-Ming
- Neue Suche nach: Yu, Ming-Jiue
In:
IEEE Transactions on Electron Devices
;
59
, 6
;
1701-1708
;
2012
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Top-Gate Staggered a-IGZO TFTs Adopting the Bilayer Gate Insulator for Driving AMOLED
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Beteiligte:Lin, Chang-Yu ( Autor:in ) / Chien, Chih-Wei ( Autor:in ) / Wu, Cheng-Han ( Autor:in ) / Hsieh, Hsing-Hung ( Autor:in ) / Wu, Chung-Chih ( Autor:in ) / Yeh, Yung-Hui ( Autor:in ) / Cheng, Chun-Cheng ( Autor:in ) / Lai, Chih-Ming ( Autor:in ) / Yu, Ming-Jiue ( Autor:in )
-
Erschienen in:IEEE Transactions on Electron Devices ; 59, 6 ; 1701-1708
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Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsdatum:01.06.2012
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Format / Umfang:523889 byte
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 59, Ausgabe 6
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