Effective Doping Concentration Theory: A New Physical Insight for the Double-RESURF Lateral Power Devices on SOI Substrate (Englisch)
Freier Zugriff
- Neue Suche nach: Zhang, Jun
- Weitere Informationen zu Zhang, Jun:
- https://orcid.org/0000-0002-5688-295X
- Neue Suche nach: Guo, Yu-Feng
- Weitere Informationen zu Guo, Yu-Feng:
- https://orcid.org/0000-0002-1490-986X
- Neue Suche nach: Pan, David Z.
- Neue Suche nach: Yang, Ke-Meng
- Weitere Informationen zu Yang, Ke-Meng:
- https://orcid.org/0000-0003-2970-993X
- Neue Suche nach: Lian, Xiao-Juan
- Neue Suche nach: Yao, Jia-Fei
- Neue Suche nach: Zhang, Jun
- Weitere Informationen zu Zhang, Jun:
- https://orcid.org/0000-0002-5688-295X
- Neue Suche nach: Guo, Yu-Feng
- Weitere Informationen zu Guo, Yu-Feng:
- https://orcid.org/0000-0002-1490-986X
- Neue Suche nach: Pan, David Z.
- Neue Suche nach: Yang, Ke-Meng
- Weitere Informationen zu Yang, Ke-Meng:
- https://orcid.org/0000-0003-2970-993X
- Neue Suche nach: Lian, Xiao-Juan
- Neue Suche nach: Yao, Jia-Fei
In:
IEEE Transactions on Electron Devices
;
65
, 2
;
648-654
;
2018
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Effective Doping Concentration Theory: A New Physical Insight for the Double-RESURF Lateral Power Devices on SOI Substrate
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Beteiligte:Zhang, Jun ( Autor:in ) / Guo, Yu-Feng ( Autor:in ) / Pan, David Z. ( Autor:in ) / Yang, Ke-Meng ( Autor:in ) / Lian, Xiao-Juan ( Autor:in ) / Yao, Jia-Fei ( Autor:in )
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Erschienen in:IEEE Transactions on Electron Devices ; 65, 2 ; 648-654
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Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsdatum:01.02.2018
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Format / Umfang:1689707 byte
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 65, Ausgabe 2
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