3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (Englisch)
Freier Zugriff
- Neue Suche nach: Green, Andrew J.
- Weitere Informationen zu Green, Andrew J.:
- https://orcid.org/0000-0003-2421-5607
- Neue Suche nach: Chabak, Kelson D.
- Neue Suche nach: Heller, Eric R.
- Neue Suche nach: Fitch, Robert C.
- Neue Suche nach: Baldini, Michele
- Neue Suche nach: Fiedler, Andreas
- Neue Suche nach: Irmscher, Klaus
- Neue Suche nach: Wagner, Gunter
- Neue Suche nach: Galazka, Zbigniew
- Neue Suche nach: Tetlak, Stephen E.
- Neue Suche nach: Crespo, Antonio
- Neue Suche nach: Leedy, Kevin
- Neue Suche nach: Jessen, Gregg H.
- Neue Suche nach: Green, Andrew J.
- Weitere Informationen zu Green, Andrew J.:
- https://orcid.org/0000-0003-2421-5607
- Neue Suche nach: Chabak, Kelson D.
- Neue Suche nach: Heller, Eric R.
- Neue Suche nach: Fitch, Robert C.
- Neue Suche nach: Baldini, Michele
- Neue Suche nach: Fiedler, Andreas
- Neue Suche nach: Irmscher, Klaus
- Neue Suche nach: Wagner, Gunter
- Neue Suche nach: Galazka, Zbigniew
- Neue Suche nach: Tetlak, Stephen E.
- Neue Suche nach: Crespo, Antonio
- Neue Suche nach: Leedy, Kevin
- Neue Suche nach: Jessen, Gregg H.
In:
IEEE Electron Device Letters
;
37
, 7
;
902-905
;
2016
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs
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Beteiligte:Green, Andrew J. ( Autor:in ) / Chabak, Kelson D. ( Autor:in ) / Heller, Eric R. ( Autor:in ) / Fitch, Robert C. ( Autor:in ) / Baldini, Michele ( Autor:in ) / Fiedler, Andreas ( Autor:in ) / Irmscher, Klaus ( Autor:in ) / Wagner, Gunter ( Autor:in ) / Galazka, Zbigniew ( Autor:in ) / Tetlak, Stephen E. ( Autor:in )
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Erschienen in:IEEE Electron Device Letters ; 37, 7 ; 902-905
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Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsdatum:01.07.2016
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Format / Umfang:1354308 byte
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 37, Ausgabe 7
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