High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique (Englisch)
- Neue Suche nach: Liu, Sheng-Hsien
- Neue Suche nach: Yang, Wen-Luh
- Neue Suche nach: Lin, Yu-Hsien
- Neue Suche nach: Wu, Chi-Chang
- Neue Suche nach: Chao, Tien-Sheng
- Neue Suche nach: Liu, Sheng-Hsien
- Neue Suche nach: Yang, Wen-Luh
- Neue Suche nach: Lin, Yu-Hsien
- Neue Suche nach: Wu, Chi-Chang
- Neue Suche nach: Chao, Tien-Sheng
In:
IEEE Transactions on Electron Devices
;
60
, 10
;
3393-3399
;
2013
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique
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Beteiligte:Liu, Sheng-Hsien ( Autor:in ) / Yang, Wen-Luh ( Autor:in ) / Lin, Yu-Hsien ( Autor:in ) / Wu, Chi-Chang ( Autor:in ) / Chao, Tien-Sheng ( Autor:in )
-
Erschienen in:IEEE Transactions on Electron Devices ; 60, 10 ; 3393-3399
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.10.2013
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Format / Umfang:1568666 byte
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 60, Ausgabe 10
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Table of contents| 2013
- 2974
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SPECIAL ISSUE ON GaN ELECTRONIC DEVICES - EDITORIAL - A Warm Welcome to a New T-ED EditorCressler, J D et al. | 2013
- 2974
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A Warm Welcome to a New TED EditorCressler, John D. et al. | 2013
- 2975
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Guest Editorial Special Issue on GaN Electronic DevicesGhione, Giovanni / Chen, Kevin J. / Egawa, Takashi / Meneghesso, Gaudenzio / Palacios, Tomas / Quay, Ruediger et al. | 2013
- 2982
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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC ApplicationsShinohara, Keisuke / Regan, Dean C. / Tang, Yan / Corrion, Andrea L. / Brown, David F. / Wong, Joel C. / Robinson, John F. / Fung, Helen H. / Schmitz, Adele / Oh, Thomas C. et al. | 2013
- 2982
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SPECIAL ISSUE PAPERS - Fabrication and Characterization of GaN Based Devices - Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications (Invited Paper)Shinohara, K et al. | 2013
- 2997
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Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTsOhi, Kota / Asubar, Joel Tacla / Nishiguchi, Kenya / Hashizume, Tamotsu et al. | 2013
- 2997
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Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs (Invited Paper)Ohi, K et al. | 2013
- 3005
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p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary BackbarriersHahn, Herwig / Reuters, Benjamin / Pooth, Alexander / Hollander, Bernd / Heuken, Michael / Kalisch, Holger / Vescan, Andrei et al. | 2013
- 3012
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High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN HeterostructureIm, Ki-Sik / Won, Chul-Ho / Jo, Young-Woo / Lee, Jae-Hoon / Bawedin, Maryline / Cristoloveanu, Sorin / Lee, Jung-Hee et al. | 2013
- 3019
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DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/DrainHuang, Tongde / Liu, Zhao Jun / Zhu, Xueliang / Ma, Jun / Lu, Xing / Lau, Kei May et al. | 2013
- 3025
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Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTsTakashima, Shinya / Li, Zhongda / Chow, T. Paul et al. | 2013
- 3032
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AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High TemperatureLee, Jae-Hoon / Park, Chanho / Im, Ki-Sik / Lee, Jung-Hee et al. | 2013
- 3040
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Fabrication and Characterization of Enhancement-Mode High-κ LaLuO3-AlGaN/GaN MIS-HEMTsYang, S et al. | 2013
- 3040
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Fabrication and Characterization of Enhancement-Mode High- $\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTsYang, Shu / Huang, Sen / Schnee, Michael / Zhao, Qing-Tai / Schubert, Jrgen / Chen, Kevin J. et al. | 2013
- 3040
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Fabrication and Characterization of Enhancement-Mode High- Formula Not Shown -AlGaN/GaN MIS-HEMTsShu, Y. / Sen, H. / Schnee, M. / Qing-Tai, Z. / Schubert, J. / Chen, K.J. et al. | 2013
- 3047
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AlGaN/GaN Three-Terminal Junction Devices for Rectification and Transistor Applications on 3C-SiC/Si PseudosubstratesHiller, Lars / Pezoldt, Jorg et al. | 2013
- 3053
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High Power GaN HEMTs for Power Switching Applications - GaN on Si Technologies for Power Switching Devices (Invited Paper)Lshida, M et al. | 2013
- 3053
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GaN on Si Technologies for Power Switching DevicesIshida, Masahiro / Ueda, Tetsuzo / Tanaka, Tsuyoshi / Ueda, Daisuke et al. | 2013
- 3060
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Lateral and Vertical Transistors Using the AlGaN/GaN HeterostructureChowdhury, Srabanti / Mishra, Umesh K et al. | 2013
- 3060
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Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure (Invited Review Paper)Chowdhury, S et al. | 2013
- 3067
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High Voltage Vertical GaN p-n Diodes With Avalanche CapabilityKizilyalli, Isik C. / Edwards, Andrew P. / Nie, Hui / Disney, Don / Bour, Dave et al. | 2013
- 3071
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Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With Formula Not Shown and Formula Not Shown Gate DielectricsVan Hove, M. / Xuanwu, K. / Stoffels, S. / Wellekens, D. / Ronchi, N. / Venegas, R. / Geens, K. / Decoutere, S. et al. | 2013
- 3071
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Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With Al2O3 and Si3N4/Al2O3 Gate DielectricsVan Hove, M et al. | 2013
- 3071
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Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate DielectricsVan Hove, Marleen / Kang, Xuanwu / Stoffels, Steve / Wellekens, Dirk / Ronchi, Nicolo / Venegas, Rafael / Geens, Karen / Decoutere, Stefaan et al. | 2013
- 3079
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High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$Freedsman, Joseph Jesudass / Kubo, Toshiharu / Egawa, Takashi et al. | 2013
- 3079
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High Drain Current Density E-Mode Al2O3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4 × 108 V2Ω-1cm-2)Freedsman, J J et al. | 2013
- 3079
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High Drain Current Density E-Mode Formula Not Shown /AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit Formula Not ShownFreedsman, J.J. / Kubo, T. / Egawa, T. et al. | 2013
- 3084
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Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC SubstratesHilt, Oliver / Kotara, Przemyslaw / Brunner, Frank / Knauer, Arne / Zhytnytska, Rimma / Wurfl, Joachim et al. | 2013
- 3091
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High Speed GaN HEMTs for RF Applications - AlInN-Based HEMTs for Large-Signal Operation at 40 GHz (Invited Paper)Tirelli, S et al. | 2013
- 3091
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AlInN-Based HEMTs for Large-Signal Operation at 40 GHzTirelli, Stefano / Lugani, Lorenzo / Marti, Diego / Carlin, Jean-Francois / Grandjean, Nicolas / Bolognesi, C. R. et al. | 2013
- 3099
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InAlN Barrier Scaled Devices for Very High Formula Not Shown and for Low-Voltage RF ApplicationsSaunier, P. / Schuette, M.L. / Tso-Min, C. / Hua-Quen, T. / Ketterson, A. / Beam, E. / Pilla, M. et al. | 2013
- 3099
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InAlN Barrier Scaled Devices for Very High fT and for Low-Voltage RF Applications (Invited Paper)Saunter, P et al. | 2013
- 3099
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InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF ApplicationsSaunier, Paul / Schuette, Michael L. / Chou, Tso-Min / Tserng, Hua-Quen / Ketterson, Andrew / Beam, Edward / Pilla, Manyam / Gao, Xiang et al. | 2013
- 3105
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Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency PerformancesRennesson, Stephanie / Lecourt, Francois / Defrance, Nicolas / Chmielowska, Magdalena / Chenot, Sebastien / Lesecq, Marie / Hoel, Virginie / Okada, Etienne / Cordier, Yvon / De Jaeger, Jean-Claude et al. | 2013
- 3105
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Optimization of Alo.29Gao.71N/GaN High Electron Mobility Heterostructures for High-Power/Frequency PerformancesRennesson, S et al. | 2013
- 3105
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Optimization of Formula Not Shown High Electron Mobility Heterostructures for High-Power/Frequency PerformancesRennesson, S. / Lecourt, F. / Defrance, N. / Chmielowska, M. / Chenot, S. / Lesecq, M. / Hoel, V. / Okada, E. et al. | 2013
- 3112
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High-Gain Millimeter-Wave AlGaN/GaN TransistorsSchwantuschke, Dirk / Bruckner, Peter / Quay, Rudiger / Mikulla, Michael / Ambacher, Oliver et al. | 2013
- 3119
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AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky JunctionZanoni, Enrico / Meneghini, Matteo / Chini, Alessandro / Marcon, Denis / Meneghesso, Gaudenzio et al. | 2013
- 3119
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Reliability and Parasitic Issues in GaN HEMTs - AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (Invited Paper)Zanoni, E et al. | 2013
- 3132
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Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTsMarcon, Denis / Meneghesso, Gaudenzio / Wu, Tian-Li / Stoffels, Steve / Meneghini, Matteo / Zanoni, Enrico / Decoutere, Stefaan et al. | 2013
- 3132
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Reliability Analysis of Permanent Degradation on AlGaN/GaN HEMTsMarcon, D. / Meneghesso, G. / Tian-Li, W. / Stoffels, S. / Meneghini, M. / Zanoni, E. / Decoutere, S. et al. | 2013
- 3142
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AlGaN/GaN HEMT Degradation: An Electro-Thermo-Mechanical Simulationder Maur, Matthias Auf / Di Carlo, Aldo et al. | 2013
- 3149
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Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTsWang, Ashu / Tadjer, Marko J. / Anderson, Travis J. / Baranyai, Roland / Pomeroy, James W. / Feygelson, Tatyana I. / Hobart, Karl D. / Pate, Bradford B. / Calle, Fernando / Kuball, Martin et al. | 2013
- 3157
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Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and ModelingTuruvekere, Sreenidhi / Karumuri, Naveen / Rahman, A. Azizur / Bhattacharya, Arnab / DasGupta, Amitava / DasGupta, Nandita et al. | 2013
- 3166
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Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient MeasurementsBisi, Davide / Meneghini, Matteo / de Santi, Carlo / Chini, Alessandro / Dammann, Michael / Bruckner, Peter / Mikulla, Michael / Meneghesso, Gaudenzio / Zanoni, Enrico et al. | 2013
- 3176
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Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation EnergyChini, Alessandro / Soci, Fabio / Meneghini, Matteo / Meneghesso, Gaudenzio / Zanoni, Enrico et al. | 2013
- 3183
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Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed $I{-}V$ MeasurementsWakejima, Akio / Wilson, Amalraj Frank / Mase, Suguru / Joka, Takuya / Egawa, Takashi et al. | 2013
- 3183
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Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed Formula Not Shown MeasurementsWakejima, A. / Wilson, A.F. / Mase, S. / Joka, T. / Egawa, T. et al. | 2013
- 3190
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Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect TransistorsJin, Donghyun / del Alamo, Jesus A. et al. | 2013
- 3197
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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free TechnologyJohnson, Derek W. / Lee, Rinus T. P. / Hill, Richard J. W. / Wong, Man Hoi / Bersuker, Gennadi / Piner, Edwin L. / Kirsch, Paul D. / Harris, H. Rusty et al. | 2013
- 3204
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Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future OutlookBellotti, Enrico / Bertazzi, Francesco / Shishehchi, Sara / Matsubara, Masahiko / Goano, Michele et al. | 2013
- 3204
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Simulation-Based Development of GaN HEMTs Devices - Theory of Carriers Transport in Ill-Nitride Materials: State of the Art and Future Outlook (Invited Paper)Bellotti, E et al. | 2013
- 3216
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Robust Surface-Potential-Based Compact Model for GaN HEMT IC DesignKhandelwal, Sourabh / Yadav, Chandan / Agnihotri, Shantanu / Chauhan, Yogesh Singh / Curutchet, Arnaud / Zimmer, Thomas / De Jaeger, Jean-Claude / Defrance, Nicolas / Fjeldly, Tor A. et al. | 2013
- 3223
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Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical ApproachSi, Jia / Wei, Jin / Chen, Wanjun / Zhang, Bo et al. | 2013
- 3230
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Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMTLi, Zhongda / Chow, T. Paul et al. | 2013
- 3238
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GaN-Based Robust Low-Noise AmplifiersColangeli, Sergio / Bentini, Andrea / Ciccognani, Walter / Limiti, Ernesto / Nanni, Antonio et al. | 2013
- 3238
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GaN-Based Low Noise Amplifiers and Gate Drive Circuits - GaN-Based Robust Low-Noise AmplifiersColangeli, S et al. | 2013
- 3249
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Capacitor-Less Gate Drive Circuit Capable of High-Efficiency Operation for Non-Insulating-Gate GaN FETsHattori, Fumiya / Umegami, Hirokatsu / Yamamoto, Masayoshi et al. | 2013
- 3256
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REVIEW PAPER - Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory DevicesLee, M C et al. | 2013
- 3256
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Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory DevicesLee, Meng Chuan / Wong, Hin Yong et al. | 2013
- 3265
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REGULAR PAPERS - Silicon and Column IV Semiconductors Devices - Piezoelectric Strain Modulation in FETsvan Hemert, T et al. | 2013
- 3265
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Piezoelectric Strain Modulation in FETsvan Hemert, Tom / Hueting, Raymond J. E. et al. | 2013
- 3271
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Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate StacksLitta, Eugenio Dentoni / Hellstrom, Per-Erik / Henkel, Christoph / Ostling, Mikael et al. | 2013
- 3277
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Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor VariabilityLeung, Greg / Chui, Chi On et al. | 2013
- 3285
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Doping-Less Tunnel Field Effect Transistor: Design and InvestigationKumar, M. Jagadesh / Janardhanan, Sindhu et al. | 2013
- 3291
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Characterization and Modeling of the Band-to-Band Current Variability of Nanoscale Device JunctionsGhetti, Andrea / Compagnoni, Christian Monzio / Calloni, Andrea / Vendrame, Loris / Spinelli, Alessandro S. / Lacaita, Andrea L. et al. | 2013
- 3298
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Impact of Transistor Architecture (Bulk Planar, Trigate on Bulk, Ultrathin-Body Planar SOI) and Material (Silicon or III–V Semiconductor) on Variation for Logic and SRAM ApplicationsAgrawal, Nidhi / Kimura, Yoshie / Arghavani, Reza / Datta, Suman et al. | 2013
- 3305
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Flexible High- Formula Not Shown /Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) FabricRojas, J.P. / Ghoneim, M.T. / Young, C.D. / Hussain, M.M. et al. | 2013
- 3305
-
Flexible High-κ/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) FabricRojas, J P et al. | 2013
- 3305
-
Flexible High-$\kappa$/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) FabricRojas, Jhonathan Prieto / Ghoneim, Mohamed Tarek / Young, Chadwin D. / Hussain, Muhammad Mustafa et al. | 2013
- 3310
-
Improvement of Electrical Properties in a Novel Partially Depleted SOI MOSFET With Emphasizing on the Hysteresis EffectAnvarifard, Mohammad K. / Orouji, Ali Asghar et al. | 2013
- 3318
-
More Accurate and Reliable Extraction of Tunneling Resistance in Tunneling FET and Verification in Small-Signal Circuit OperationCho, Seongjae / Kang, In Man / Kim, Kyung Rok et al. | 2013
- 3325
-
Gate-Stack Engineering in Formula Not Shown -Type Ultrascaled Si Nanowire Field-Effect TransistorsLuisier, M. / Schenk, O. et al. | 2013
- 3325
-
Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect TransistorsLuisier, Mathieu / Schenk, Olaf et al. | 2013
- 3330
-
Heat Channeling in Extremely Thin Silicon-on-Insulator Devices: A Simulation StudyOrfanidou, Charis Mina / Giapintzakis, John et al. | 2013
- 3335
-
Theoretical Investigation of Trigate AlGaN/GaN HEMTsAlsharef, Mohamed A. / Granzner, Ralf / Schwierz, Frank et al. | 2013
- 3335
-
Compound Semiconductor Devices - Theoretical Investigation of Trigate AlGaN/GaN HEMTsAlsharef, M A et al. | 2013
- 3342
-
High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction TechnologyKim, SangHyeon / Yokoyama, Masafumi / Nakane, Ryosho / Ichikawa, Osamu / Osada, Takenori / Hata, Masahiko / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2013
- 3351
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On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility TransistorsKaushik, Janesh K. / Balakrishnan, V. Raman / Panwar, Brishbhan Singh / Muralidharan, Rangarajan et al. | 2013
- 3358
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Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance ThermometrySchwitter, Bryan K. / Parker, Anthony E. / Fattorini, Anthony P. / Mahon, Simon J. / Heimlich, Michael C. et al. | 2013
- 3365
-
Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode StructureMatioli, Elison / Lu, Bin / Palacios, Tomas et al. | 2013
- 3371
-
High-Performance and Robust SRAM Cell Based on Asymmetric Dual-$k$ Spacer FinFETsPal, Pankaj Kumar / Kaushik, Brajesh Kumar / Dasgupta, Sudeb et al. | 2013
- 3371
-
Memory Devices and Technology - High-Performance and Robust SRAM Cell Based on Asymmetric Dual-k Spacer FinFETsPal, P K et al. | 2013
- 3371
-
High-Performance and Robust SRAM Cell Based on Asymmetric Dual- Formula Not Shown Spacer FinFETsPal, P.K. / Kaushik, B.K. / Dasgupta, S. et al. | 2013
- 3378
-
Dynamic Modeling of Dual Speed Ferroelectric and Charge Hybrid MemoryRajwade, Shantanu Rajaram / Auluck, Kshitij / Naoi, Taro A. / Jayant, Krishna / Kan, Edwin Chihchuan et al. | 2013
- 3385
-
The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array PerformanceMandapati, Raju / Borkar, Abhijit Shripat / Srinivasan, V. S. Senthil / Bafna, Pranil / Karkare, Prateek / Lodha, Saurabh / Ganguly, Udayan et al. | 2013
- 3393
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High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment TechniqueLiu, Sheng-Hsien / Yang, Wen-Luh / Lin, Yu-Hsien / Wu, Chi-Chang / Chao, Tien-Sheng et al. | 2013
- 3400
-
Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type SwitchingKamiya, Katsumasa / Yang, Moon Young / Magyari-Kope, Blanka / Niwa, Masaaki / Nishi, Yoshio / Shiraishi, Kenji et al. | 2013
- 3407
-
Thin Film Transistors - Gigahertz Operation of a-IGZO Schottky DiodesChasin, A et al. | 2013
- 3407
-
Gigahertz Operation of a-IGZO Schottky DiodesChasin, Adrian / Nag, Manoj / Bhoolokam, Ajay / Myny, Kris / Steudel, Soeren / Schols, Sarah / Genoe, Jan / Gielen, Georges / Heremans, Paul et al. | 2013
- 3413
-
Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film TransistorsXifeng, Li / Enlong, Xin / Jianhua, Zhang et al. | 2013
- 3417
-
Surface Potential-Based Polycrystalline-Silicon Thin-Film Transistors Compact Model by Nonequilibrium ApproachIkeda, Hiroyuki / Sano, Nobuyuki et al. | 2013
- 3424
-
Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 ${\rm cm}^{2}/{\rm Vs}$Brox-Nilsen, Christian / Jin, Jidong / Luo, Yi / Bao, Peng / Song, Aimin M. et al. | 2013
- 3424
-
Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 Formula Not ShownBrox-Nilsen, C. / Jidong, J. / Yi, L. / Peng, B. / Song, A.M. et al. | 2013
- 3424
-
Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 cm2/VsBrox-Nilsen, C et al. | 2013
- 3430
-
Low Cell Gap Polymeric Liquid Crystal Lens for 2-D/3-D Switchable Auto-Stereoscopic DisplayMun, Byung-June / Baek, Ji-Ho / Lee, Joun Ho / Kim, Byeong Koo / Choi, Hyun Chul / Kim, Jae-Hoon / Lee, Gi-Dong et al. | 2013
- 3430
-
Optoelectronics, Displays, and Imaging - Low Cell Gap Polymeric Liquid Crystal Lens for 2-D/3-D Switchable Auto-Stereoscopic DisplayMun, B-J et al. | 2013
- 3435
-
Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/ Formula Not Shown Multilayer Avalanche PhotodiodesChing, K.C. / Dalapati, G.K. et al. | 2013
- 3435
-
Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/${\rm Al}_{x}{\rm Ga}_{1-x}{\rm As}~(0\leq x\leq 0.8)$ Multilayer Avalanche PhotodiodesChia, Ching Kean / Dalapati, Goutam Kumar et al. | 2013
- 3435
-
Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/AlxGa1-xAs (0Chia, C K et al. | 2013
- 3442
-
SPAD Image Sensor With Analog Counting Pixel for Time-Resolved Fluorescence DetectionPancheri, Lucio / Massari, Nicola / Stoppa, David et al. | 2013
- 3450
-
A 252-V/lux.s, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled DeviceArai, T et al. | 2013
- 3450
-
A 252-${\rm V/lux}{\cdot}{\rm s}$, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled DeviceArai, Toshiki / Yonai, Jun / Hayashida, Tetsuya / Ohtake, Hiroshi / van Kuijk, Harry / Etoh, Takeharu Goji et al. | 2013
- 3450
-
A 252- Formula Not Shown, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled DeviceArai, T. / Jun, Y. / Hayashida, T. / Ohtake, H. / van Kuijk, H. / Etoh, T.G. et al. | 2013
- 3459
-
Closed-Form and Explicit Analytical Model for Crosstalk in CMOS PhotodiodesBlanco-Filgueira, Beatriz / Lopez, Paula / Roldan, Juan Bautista et al. | 2013
- 3465
-
Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film TransistorsBae, Minkyung / Lee, Kyung Min / Cho, Eou-Sik / Kwon, Hyuck-In / Kim, Dong Myong / Kim, Dae Hwan et al. | 2013
- 3474
-
Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B PhotodetectorsHou, Yaonan / Mei, Zengxia / Liang, Huili / Ye, Daqian / Gu, Changzhi / Du, Xiaolong / Lu, Yicheng et al. | 2013
- 3478
-
Photo-Induced Coplanar Waveguide RF Switch and Optical Crosstalk on High-Resistivity Silicon Trap-Rich Passivated SubstrateAli, Khaled Ben / Neve, Cesar Roda / Gharsallah, Ali / Raskin, Jean-Pierre et al. | 2013
- 3485
-
Exoemission Properties of PDP Protective LayersChen, Yuxiang / Li, Qing / Kuang, Wenjian / Hu, Kai / Tolner, Harm et al. | 2013
- 3493
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Impact Ionization in Absorption, Grading, Charge, and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge LayerZhao, Yanli et al. | 2013
- 3500
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Solid-State Power and High Voltage Devices - Power-Rail ESD Clamp Circuit With Diode-String ESD Detection to Overcome the Gate Leakage Current in a 40-nm CMOS ProcessAltolaguirre, F A et al. | 2013
- 3500
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Power-Rail ESD Clamp Circuit With Diode-String ESD Detection to Overcome the Gate Leakage Current in a 40-nm CMOS ProcessAltolaguirre, Federico Agustin / Ker, Ming-Dou et al. | 2013
- 3508
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Study on Dual Channel n-p-LDMOS Power Devices With Three TerminalsKong, Moufu / Du, Wenfang / Chen, Xingbi et al. | 2013
- 3515
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High-Voltage LDMOS Transistor With Split-Gate Structure for Improved Electrical PerformanceNa, Kee-Yeol / Baek, Ki-Ju / Lee, Gun-Woong / Kim, Yeong-Seuk et al. | 2013
- 3521
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Electrical Performance and Reliability Investigation of Cosputtered Cu/Ti Bonded InterconnectsChen, Hsiao-Yu / Hsu, Sheng-Yao / Chen, Kuan-Neng et al. | 2013
- 3521
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Materials, Processing and Packaging - Electrical Performance and Reliability Investigation of Cosputtered Cu/Ti Bonded InterconnectsChen, H-Y et al. | 2013
- 3527
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First Principles Simulations of Nanoscale Silicon Devices With Uniaxial StrainZhang, Lining / Zahid, Ferdows / Zhu, Yu / Liu, Lei / Wang, Jian / Guo, Hong / Chan, Philip Ching Ho / Chan, Mansun et al. | 2013
- 3527
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Solid State Device Phenomena - First Principles Simulations of Nanoscale Silicon Devices With Uniaxial StrainZhang, L et al. | 2013
- 3534
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Improved ON-State Reliability of Atom Switch Using Alloy ElectrodesTada, Munehiro / Sakamoto, Toshitsugu / Banno, Naoki / Okamoto, Koichiro / Iguchi, Noriyuki / Hada, Hiromitsu / Miyamura, Makoto et al. | 2013
- 3541
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Determination of Diffusion Length for the Finite Thickness Normal-Collector Configuration Using EBIC TechniqueTan, Chee Chin / Ong, Vincent K. S. / Radhakrishnan, K. / Sunar, Siti Hairunnisah Bte et al. | 2013
- 3548
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Solution of Time Dependent Joule Heat Equation for a Graphene Sheet Under Thomson EffectVerma, Rekha / Bhattacharya, Sitangshu / Mahapatra, Santanu et al. | 2013
- 3555
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A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel TransistorsKuroda, Rihito / Yonezawa, Akihiro / Teramoto, Akinobu / Li, Tsung-Ling / Tochigi, Yasuhisa / Sugawa, Shigetoshi et al. | 2013
- 3562
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Three-Side Buttable Integrated Ultrasound Chip With a 16 x 16 Reconfigurable Transceiver and Capacitive Micromachined Ultrasonic Transducer Array for 3-D Ultrasound Imaging SystemsJung, S-J et al. | 2013
- 3562
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Three-Side Buttable Integrated Ultrasound Chip With a 16 Formula Not Shown 16 Reconfigurable Transceiver and Capacitive Micromachined Ultrasonic Transducer Array for 3-D Ultrasound Imaging SystemsSung-Jin, J. / Jong-Keun, S. / Oh-Kyong, K. et al. | 2013
- 3562
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Three-Side Buttable Integrated Ultrasound Chip With a 16$\,\times\,$16 Reconfigurable Transceiver and Capacitive Micromachined Ultrasonic Transducer Array for 3-D Ultrasound Imaging SystemsJung, Sung-Jin / Song, Jong-Keun / Kwon, Oh-Kyong et al. | 2013
- 3570
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Vacuum Electron Devices - Design of a High-Harmonic Gyrotron With a Permanent Magnet SystemXu, S X et al. | 2013
- 3570
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Design of a High-Harmonic Gyrotron With a Permanent Magnet SystemXu, Shou Xi / Liu, Pu Kun / Liu, G. F. / Geng, Z. H. / Du, Chao Hai / Shi, S. H. / Wang, H. / Gu, W. / Zhang, S. C. et al. | 2013
- 3576
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Theory, Simulations, and Experiments of the Dispersion and Interaction Impedance for the Double-Slot Coupled-Cavity Slow Wave Structure in TWTHe, Fangming / Luo, Jirun / Zhu, Min / Guo, Wei et al. | 2013
- 3584
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Graphene Base Transistors: A Simulation Study of DC and Small-Signal OperationDi Lecce, Valerio / Grassi, Roberto / Gnudi, Antonio / Gnani, Elena / Reggiani, Susanna / Baccarani, Giorgio et al. | 2013
- 3584
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Emerging Technologies and Devices - Graphene Base Transistors: A Simulation Study of DC and Small-Signal OperationLecce, V D et al. | 2013
- 3592
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BRIEF PAPERS - High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio LinksCamarchia, V et al. | 2013
- 3592
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High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio LinksCamarchia, Vittorio / Rubio, Jorge Jiulian Moreno / Pirola, Marco / Quaglia, Roberto / Colantonio, Paolo / Giannini, Franco / Giofre, Rocco / Piazzon, Luca / Emanuelsson, Thomas / Wegeland, Tobias et al. | 2013
- 3596
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Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFETHu, Vita Pi-Ho / Fan, Ming-Long / Su, Pin / Chuang, Ching-Te et al. | 2013
- 3601
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A Gain-Adaptive Column Amplifier for Wide-Dynamic-Range CMOS Image SensorsLe-Thai, Ha / Xhakoni, Adi / Gielen, Georges et al. | 2013
- 3605
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Corrections to “Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors”Verreck, Devin / Verhulst, Anne S. / Kao, Kuo-Hsing / Vandenberghe, William G. / De Meyer, Kristin / Groeseneken, Guido et al. | 2013
- 3605
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Corrections to ``Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors'' [Jul 13 2128-2134]Verreck, D. / Verhulst, A.S. / Kao, K.-H. / Vandenberghe, W.G. / De Meyer, K. / Groeseneken, G. et al. | 2013
- 3606
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26th International Symposium on Power semiconductor Devices and ICs| 2013
- 3607
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2014 IEEE International Reliablity Physics Symposium| 2013
- 3608
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40th IEEE Photovoltaic Specialists Conference| 2013
- C1
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Front cover| 2013
- C2
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IEEE Transactions on Electron Devices publication information| 2013
- C3
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IEEE Transactions on Electron Devices information for authors| 2013
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COMMENTS AND CORRECTIONS - Correction to "Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors"Verreck, D et al. | 2013