Two-Element 81-86 GHz SiGe Transmitter Beamformer for Backhaul Applications (Englisch)
- Neue Suche nach: Yishay, Roee Ben
- Neue Suche nach: Katz, Oded
- Neue Suche nach: Elad, Danny
- Neue Suche nach: Yishay, Roee Ben
- Neue Suche nach: Katz, Oded
- Neue Suche nach: Elad, Danny
In:
2021 16th European Microwave Integrated Circuits Conference (EuMIC)
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47-50
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2022
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ISBN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Two-Element 81-86 GHz SiGe Transmitter Beamformer for Backhaul Applications
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Beteiligte:
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:03.04.2022
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Format / Umfang:580472 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Load-pull measurement of SiGe:C HBT in BiCMOS 55 nm featuring 11 dBm of output power at 185 GHzMaye, C. / Lepilliet, S. / Okada, E. / Brezza, E. / Gauthier, A. / Margalef-Rovira, M. / Gloria, D. / Ducournau, G. / Gaquiere, C. et al. | 2022
- 1
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Book of Abstracts| 2022
- 1
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EuMIC 2021 Abstract Cards| 2022
- 1
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EuMIC 2021 Table of Contents| 2022
- 1
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A highly linear 79 GHz Low-Noise Amplifier for Civil-Automotive Radars in 22 nm FD-SOI CMOS with -6 dBm iP1dB and 5 dB NFLi, Songhui / Fritsche, David / Szilagyi, Laszlo / Xu, Xin / Le, Quang Huy / Wang, Defu / Kampfe, Thomas / Carta, Corrado / Ellinger, Frank et al. | 2022
- 5
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Nonlinear Characterization of Wideband Power Amplifiers with Frequency-Dependent Match LoadChaudhary, Sanket / Carvalho, Nuno Borges / Jordao, Marina / Bossche, Marc Vanden / Cooman, Adam / Pires, Sergio et al. | 2022
- 9
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Intermodulation Products of a CMOS SP6T Antenna Switch: Results Comparison Between an Experimental Test-Bench and a Corresponding Simulated Virtual Test-BenchBen-Sassi, M. / Saleh, H. / Sow, O. / Lahbib, I. / U'Ren, Greg D. / Hellepee, C. / Passerieux, D. / Neveux, G. / Barataud, D. et al. | 2022
- 13
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A computationally-efficient self-consistent large signal model for GaN HEMTs based on ASM-HEMTKhandelwal, S. / Kikuchi, K. / Yamamoto, H. et al. | 2022
- 17
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Large-Signal Modeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI TechnologyLe, Quang Huy / Khoa Huynh, Dang / Nayak, Anurag / Lehmann, Steffen / Zhao, Zhixing / Kampfe, Thomas / Rudolph, Matthias et al. | 2022
- 22
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Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22nm FDSOI TechnologyLe, Quang Huy / Huynh, Dang Khoa / Lehmann, Steffen / Zhao, Zhixing / Kampfe, Thomas / Rudolph, Matthias et al. | 2022
- 26
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Design Methodology of Wide Tuning Range DGS-based VCO for K-band Applications in 0.18-µm CMOS TechnologyChen, Baichuan / Thapa, Samundra K. / Jahan, Nusrat / Barakat, Adel / Pokharel, Ramesh K. et al. | 2022
- 30
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Linearity Assessment of GaN HEMTs on Si using Nonlinear CharacterisationElKashlan, Rana / Khaled, Ahmad / Rodriguez, Raul / Putcha, Vamsi / Peralagu, Uthayasankaran / Alian, AliReza / Collaert, Nadine / Wambacq, Piet / Parvais, Bertrand et al. | 2022
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Reconfigurable and Scalable Monolithic Band Reject Circuit Utilizing Phase-Change Switch MatricesSingh, Tejinder / Mansour, Raafat R. et al. | 2022
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A Bidirectional 28 GHz RF Transceiver Front-End with Test and Calibration Interface for 5G Phased ArraysKolb, Katharina / Potschka, Julian / Maiwald, Tim / Aufinger, Klaus / Hagelauer, Amelie / Dietz, Marco / Weigel, Robert et al. | 2022
- 43
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A 2-channel TX and 4-channel RX in SiGe BiCMOS for X-band MIMO Radar ApplicationsKucharski, M. / Blaszczuk, B. / Klemm, M. / Piesiewicz, R. et al. | 2022
- 47
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Two-Element 81-86 GHz SiGe Transmitter Beamformer for Backhaul ApplicationsYishay, Roee Ben / Katz, Oded / Elad, Danny et al. | 2022
- 51
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A W-Band Single-Chip Receiver in a 60 nm GaN-on-Silicon Foundry ProcessMalmqvist, Robert / Jonsson, Rolf / Bao, Mingquan / LeBlanc, Remy / Buisman, Koen / Fager, Christian / Andersson, Kristoffer et al. | 2022
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A 30-to-38 GHz Active and Passive Combined Down-conversion Variable Gain Mixer with Low OP1dB Variation in 65-nm CMOSLi, Mu-Heng / Chen, Chun-Nien / Wang, Yunshan / Wang, Huei et al. | 2022
- 59
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Analog Linearization of a 10-W GaN Power Amplifier by Baseband FeedbackEltayeb, Mathani / Olavsbraten, Morten / Gibiino, Gian Piero / Santarelli, Alberto et al. | 2022
- 63
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Statistical Modeling of GaN HEMTs by Direct Transfer of Variations to Model ParametersBeleniotis, Petros / Chevtchenko, Serguei / Rudolph, Matthias et al. | 2022
- 67
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Design of Terahertz InP pHEMT Using Machine Learning Assisted Global Optimization TechniquesWang, Jing / Xue, Li-Yuan / Liu, Bo / Li, Chong et al. | 2022
- 71
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Low-Power Ka- and V-Band Miller Compensated Amplifiers in 130-nm SiGe BiCMOS TechnologySutbas, Batuhan / Ng, Herman Jalli / Wessel, Jan / Koelpin, Alexander / Kahmen, Gerhard et al. | 2022
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A High GBW High Power Wideband Power Amplifier for Automotive Radar ApplicationHadipour, Kambiz / Amschl, Dominik / Knauder, Daniel / Di Martino, Stefano et al. | 2022
- 80
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A highly rugged 39 GHz 19.3 dBm Power Amplifier for 5G Applications in 45nm SOI TechnologyBossuet, Alice / Martineau, Baudouin / Dehos, Cedric / Blampey, Benjamin / Divay, Alexis / Morandini, Yvan et al. | 2022
- 84
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44 dBm Output Power and High Gain K-band GaN Power Amplifier for Satellite CommunicationTorii, Takuma / Kawamura, Yoshifumi / Kuwata, Eigo / Tsuru, Masaomi et al. | 2022
- 88
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125 W Solid State Power Amplifier for 17.3-20.2 GHz SatCom ApplicationsGiofre, R. / Colantonio, P. / Cabria, L. / Lopez, M. et al. | 2022
- 92
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A Ka-Band MMIC Single-Chip Frequency Converter for Telecom Satellite ApplicationsScappaviva, Francesco / Resca, Davide / Cariani, Luca / Biondi, Andrea / Vitulli, Francesco / Deborgies, Francois et al. | 2022
- 96
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A V-band Low-Power and Compact Down-Conversion Mixer with Low LO Power in 130-nm SiGe BiCMOS TechnologySutbas, Batuhan / Ng, Herman Jalli / Wessel, Jan / Koelpin, Alexander / Kahmen, Gerhard et al. | 2022
- 100
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A 60 GHz Frequency Doubler with 3.4-dBm Output Power and 4.4% DC-to-RF-Efficiency in 130-nm SiGe BiCMOSZhu, Yu / Ghaleb, Hatem / Ries, Vincent / Joram, Niko / Ellinger, Frank et al. | 2022
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A 14.6 GHz–19.2 GHz Digitally Controlled Injection Locked Frequency Doubler in 45 nm SOI CMOSKursu, Olli / Rahkonen, Timo / Parssinen, Aarno et al. | 2022
- 108
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A W-Band Up-Conversion Mixer with Integrated LO Frequency Doublers in a 60 nm GaN TechnologyBao, Mingquan / Malmqvist, Robert / Jonsson, Rolf / Hansryd, Jonas / Andersson, Kristoffer et al. | 2022
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SiGe BiCMOS Building Blocks for E- and D-Band Backhauling Front-EndsAmendola, G. / Boccia, L. / Centurelli, F. / Chevalier, P. / Fonte, A. / Karman, S. / Levantino, S. / Mazzanti, A. / Mustacchio, C. / Pallotta, A. et al. | 2022
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A Superheterodyne 300GHz Transmit Receive Chipset for Beyond 5G Network IntegrationDan, Iulia / Grotsch, Christopher / John, Laurenz / Wagner, Sandrine / Tessmann, Axel / Kallfass, Ingmar et al. | 2022
- 121
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Implementation of Slow-Wave Thin-Film Microstrip Transmission Lines in a 35nm InGaAs TechnologyGatzastras, Athanasios / Massler, Hermann / Leuther, Arnulf / Chartier, Sebastien / Kallfass, Ingmar et al. | 2022
- 125
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A 140 GHz to 170 GHz Active Tunable Noise Source Development in SiGe BiCMOS 55 nm TechnologyFiorese, Victor / Azevedo Goncalves, Joao Carlos / Bouvot, Simon / Dubois, Emmanuel / Gaquiere, Christophe / Ducournau, Guillaume / Danneville, Francois / Lepilliet, Sylvie / Gloria, Daniel et al. | 2022
- 129
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200 GHz Low Noise Amplifiers in 250 nm InP HBT TechnologySoylu, Utku / Ahmed, Ahmed S. H. / Seo, Munkyo / Farid, Ali / Rodwell, Mark et al. | 2022
- 133
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Output Power Limited Rugged GaN LNA MMICKaule, Evelyne / Andrei, Cristina / Rudolph, Matthias et al. | 2022
- 140
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Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT TechnologyHossain, M. / Doerner, R. / Yacoub, H. / Johansen, T. K. / Heinrich, W. / Krozer, V. et al. | 2022
- 144
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C-Band Low-Noise Amplifier MMIC with an Average Noise Temperature of 44.5 K and 24.8 mW Power ConsumptionHeinz, Felix / Thome, Fabian / Leuther, Arnulf / Ambacher, Oliver et al. | 2022
- 148
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Transient Field-Plate Thermometry Demonstrated on a 20-W X-Band GaN Power AmplifierMahon, Simon J. / Gorman, Melissa C. / Heimlich, Michael C. et al. | 2022
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A 27dBm Ku-Band SiGe Power Amplifier Working up to 90°C with High Robustness to the 2:1 SWRCoquillas, B. / Kerherve, E. / Redois, S. / Amiaud, AC. / Roussel, L. / Louis, B. / Itcia, E. / Merlet, T. et al. | 2022
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400-Watt S-band Power Amplifier MMICde Hek, A. P. / van der Bent, G. / van Vliet, F. E. et al. | 2022
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120 GBd SiGe-Based 2:1 Analog Multiplexer Module for Ultra-Broadband Transmission SystemsSchmidt, C. / Tannert, T. / Choi, J.H. / Caspar, C. / Pech, D. / Wunsch, S. / Ropers, G. / Schostak, J. / Jungnickel, V. / Freund, R. et al. | 2022
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Multi-Phase Clock Path Circuit up to 57 GHz Including 5 bit Programmable Phase Interpolators for Time-Interleaved Broadband Data Converters in a 28 nm FD-SOI CMOS TechnologyWidmann, Daniel / Tannert, Tobias / Du, Xuan-Quang / Grozing, Markus / Berroth, Manfred et al. | 2022
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Noise Modeling of GaN/AlN HEMTHaque, Sanaul / Schnieder, Frank / Hilt, Oliver / Doerner, Ralf / Brunner, Frank / Rudolph, Matthias et al. | 2022
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Efficient TCAD Temperature-dependent Large-Signal Simulation of a FinFET Power AmplifierCatoggio, E. / Donati Guerrieri, S. / Bonani, F. / Ghione, G. et al. | 2022
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Trap Characterization in InAlN/GaN and AlN/GaN based HEMTs with Fe- and C-doped BuffersDupouy, Emmanuel / Raja, P. Vigneshwara / Gaillard, Florent / Sommet, Raphael / Nallatamby, Jean-Christophe et al. | 2022
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Mechanisms of Buffer and Surface Traps in GaN HEMTs for Low Frequency Y21 and Y22 parametersOtsuka, Tomohiro / Yamaguchi, Yutaro / Tsuru, Masaomi / Oishi, Toshiyuki et al. | 2022
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A Low Phase Noise Phase-Locked Loop With Short Settling Times for Automotive RadarBraun, Tobias T. / van Delden, Marcel / Bredendiek, Christian / Schoepfel, Jan / Pohl, Nils et al. | 2022
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A Passively-Coupled 39.5 GHz Colpitts Quadrature VCO in SiGe HBT TechnologyWormann, Janis / Dyskin, Aleksey / Chartier, Sebastien / Kallfass, Ingmar et al. | 2022
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30-46 GHz 1.5dB IL Negative Gate Control SPDT with 24.5dBm IP1 in 130nm CMOSLondhe, Sumeet / Bar-Helmer, Noam / Jameson, Samuel / Socher, Eran et al. | 2022
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A Highly Linear SiGe BiCMOS Gilbert-Cell based Downconversion Mixer for 5G ApplicationsMahmud, Mir Hassan / Burak, Abdurrahman / Caliskan, Can / Ozkan, Tahsin Alper / Bahadir Ozdol, Ali / Yazici, Melik / Gurbuz, Yasar et al. | 2022
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37.2-to-42.0 GHz VCO with -93.4 dBc/Hz Phase Noise for FMCW Radar in 22 nm FDSOISzilagyi, Laszlo / Li, Songhui / Xu, Xin / Testa, Paolo Valerio / Seidel, Andres / Carta, Corrado / Ellinger, Frank et al. | 2022
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A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAEShrestha, Amit / Doerner, Ralf / Yacoub, Hady / Johansen, Tom K. / Heinrich, Wolfgang / Krozer, Viktor / Rudolph, Matthias / Wentzel, Andreas et al. | 2022
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A 117.5-130 GHz 22.1 dBm 11.5% PAE DAT Based Power Amplifier in InP 130 nm HBT TechnologyZhang, Linsheng / Iyer, Vinay / Sheth, Jay / Xie, Linli / Weikle, Robert M. / Bowers, Steven M. et al. | 2022
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A 47-50 GHz 3 W MMIC Power Amplifier Using 100 nm Gallium Nitride TechnologyFakhfakh, Seifeddine / Callet, Guillaume / Byk, Estelle / Favede, Laurent / Malko, Aleksandra / Riedmueller, Sandra / Denis, Pierre / Blanck, Herve / Camiade, Marc et al. | 2022
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A Derating-Rules Compliant Ka-Band GaN-on-Si Power Amplifier Designed for Highly Reliable Satellite ApplicationsCostanzo, F. / Pace, L. / Longhi, P. E. / Ciccognani, W. / Colangeli, S. / Leblanc, R. / Limiti, E. et al. | 2022
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Benefits of AlGaN/GAN thermal ROM coupling with industrial non-linear transistor modelChang, C. / Brunel, L. et al. | 2022
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A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT TechnologyTurhaner, Arsen / Hossain, Maruf / Brahem, Mohamed / Johansen, Tom K. et al. | 2022
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55% Fractional-Bandwidth Doherty Power Amplifier in 130-nm SiGe for 5G mm-Wave ApplicationsFranzese, Aniello / Maletic, Nebojsa / Eissa, Mohamed / Wei, Muh-Dey / Negra, Renato / Malignaggi, Andrea et al. | 2022
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Full Octave Continuously Tunable SiGe Bipolar LC-VCO in Ku-BandBredendiek, Christian / Aufinger, Klaus / Pohl, Nils et al. | 2022
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Probabilistic Poly Harmonic Distortion ModelManjaly, Anna Davis / King, Justin et al. | 2022
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An S-band 34dBm Stacked-HBT Phase Driver in 0.25μm BiCMOS Technology for GaN-Based Phased-Array Radar Transmit ChainEssing, J. / Bossuet, A. / Knight, R. / de Hek, A. P. / van Vliet, F. E. et al. | 2022
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A Phase Coherent DC-25 GHz 6-bit SiGe BiCMOS Step Attenuator with IP1dB >20 dBmKandis, Hamza / Burak, Abdurrahman / Kana, Cengizhan / Yazici, Melik / Gurbuz, Yasar et al. | 2022
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Numerical and Experimental Investigations of Self-mixing Effect of a Planar Gunn Diode OscillatorZhong, Ming Yan / Cumming, David R. S. / Li, Chong et al. | 2022
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