High-Performance and Low-Power Bulk Logic Platform Utilizing FET Specific Multiple-Stressors with Highly Enhanced Strain and Full-Porous Low-k Interconnects for 45-nm CMOS Technology (Englisch)
- Neue Suche nach: Miyashita, T.
- Neue Suche nach: Ikeda, K.
- Neue Suche nach: Kim, Y. S.
- Neue Suche nach: Yamamoto, T.
- Neue Suche nach: Sambonsugi, Y.
- Neue Suche nach: Ochimizu, H.
- Neue Suche nach: Sakoda, T.
- Neue Suche nach: Okuno, M.
- Neue Suche nach: Minakata, H.
- Neue Suche nach: Ohta, H.
- Neue Suche nach: Hayami, Y.
- Neue Suche nach: Ookoshi, K.
- Neue Suche nach: Shimamune, Y.
- Neue Suche nach: Fukuda, M.
- Neue Suche nach: Hatada, A.
- Neue Suche nach: Okabe, K.
- Neue Suche nach: Kubo, T.
- Neue Suche nach: Tajima, M.
- Neue Suche nach: Motoh, E.
- Neue Suche nach: Owada, T.
- Neue Suche nach: Nakamura, M.
- Neue Suche nach: Kudo, H.
- Neue Suche nach: Sawada, T.
- Neue Suche nach: Nagayama, J.
- Neue Suche nach: Satoh, A.
- Neue Suche nach: Mori, T.
- Neue Suche nach: Hasegawa, A.
- Neue Suche nach: Kurata, H.
- Neue Suche nach: Sukegawa, K.
- Neue Suche nach: Tsukune, A.
- Neue Suche nach: Yamaguchi, S.
- Neue Suche nach: Kase, M.
- Neue Suche nach: Futatsugi, T.
- Neue Suche nach: Satoh, S.
- Neue Suche nach: Sugii, T.
- Neue Suche nach: Miyashita, T.
- Neue Suche nach: Ikeda, K.
- Neue Suche nach: Kim, Y. S.
- Neue Suche nach: Yamamoto, T.
- Neue Suche nach: Sambonsugi, Y.
- Neue Suche nach: Ochimizu, H.
- Neue Suche nach: Sakoda, T.
- Neue Suche nach: Okuno, M.
- Neue Suche nach: Minakata, H.
- Neue Suche nach: Ohta, H.
- Neue Suche nach: Hayami, Y.
- Neue Suche nach: Ookoshi, K.
- Neue Suche nach: Shimamune, Y.
- Neue Suche nach: Fukuda, M.
- Neue Suche nach: Hatada, A.
- Neue Suche nach: Okabe, K.
- Neue Suche nach: Kubo, T.
- Neue Suche nach: Tajima, M.
- Neue Suche nach: Motoh, E.
- Neue Suche nach: Owada, T.
- Neue Suche nach: Nakamura, M.
- Neue Suche nach: Kudo, H.
- Neue Suche nach: Sawada, T.
- Neue Suche nach: Nagayama, J.
- Neue Suche nach: Satoh, A.
- Neue Suche nach: Mori, T.
- Neue Suche nach: Hasegawa, A.
- Neue Suche nach: Kurata, H.
- Neue Suche nach: Sukegawa, K.
- Neue Suche nach: Tsukune, A.
- Neue Suche nach: Yamaguchi, S.
- Neue Suche nach: Kase, M.
- Neue Suche nach: Futatsugi, T.
- Neue Suche nach: Satoh, S.
- Neue Suche nach: Sugii, T.
In:
2007 IEEE International Electron Devices Meeting
;
251-254
;
2007
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:High-Performance and Low-Power Bulk Logic Platform Utilizing FET Specific Multiple-Stressors with Highly Enhanced Strain and Full-Porous Low-k Interconnects for 45-nm CMOS Technology
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Beteiligte:Miyashita, T. ( Autor:in ) / Ikeda, K. ( Autor:in ) / Kim, Y. S. ( Autor:in ) / Yamamoto, T. ( Autor:in ) / Sambonsugi, Y. ( Autor:in ) / Ochimizu, H. ( Autor:in ) / Sakoda, T. ( Autor:in ) / Okuno, M. ( Autor:in ) / Minakata, H. ( Autor:in ) / Ohta, H. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.12.2007
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Format / Umfang:5000698 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
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Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory CellsCastro, D. Tio / Goux, L. / Hurkx, G.A.M / Attenborough, K. / Delhougne, R. / Lisoni, J. / Jedema, F.J. / Zandt, M.A.A. in `t / Wolters, R.A.M. / Gravesteijn, D.J. et al. | 2007
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A Novel Cross-Spacer Phase Change Memory with Ultra-Small Lithography Independent Contact AreaChen, W.S. / Lee, C.M. / Chao, D.S. / Chen, Y.C. / Chen, F. / Chen, C.W. / Yen, P.H. / Chen, M.J. / Wang, W.H. / Hsiao, T.C. et al. | 2007
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The Role of Interfaces in Damascene Phase-Change MemoryKencke, David L. / Karpov, Ilya V. / Johnson, Brian G. / Lee, Sean Jong / Kau, DerChang / Hudgens, Stephen J. / Reifenberg, John P. / Savransky, Semyon D. / Zhang, Jingyan / Giles, Martin D. et al. | 2007
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Process Technology - Gate Stack Process I - Fundamental AspectsChin, Albert / De Gendt, Stefan et al. | 2007
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Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layerPetry, J. / Singanamalla, R. / Xiong, K. / Ravit, C. / Simoen, E. / O'Connor, R. / Veloso, A. / Adelmann, C. / Van Elshocht, S. / Paraschiv, V. et al. | 2007
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Very Low Vt [Ir-Hf]/HfLaO CMOS Using Novel Self-Aligned Low Temperature Shallow JunctionsCheng, C. F. / Wu, C. H. / Su, N. C. / Wang, S. J. / McAlister, S. P. / Chin, Albert et al. | 2007
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Mechanism of Vfb roll-off with High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work functionSong, S. C. / Park, C. S. / Price, J. / Burham, C. / Choi, R. / Wen, H. C. / Choi, K. / Tseng, H. H. / Lee, B. H. / Jammy, R. et al. | 2007
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Comprehensive Study of VFB Shift in High-k CMOS - Dipole Formation, Fermi-level Pinning and Oxygen Vacancy EffectKamimuta, Y. / Iwamoto, K. / Nunoshige, Y. / Hirano, A. / Mizubayashi, W. / Watanabe, Y. / Migita, S. / Ogawa, A. / Ota, H. / Nabatame, T. et al. | 2007
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Wide Controllability of Flatband Voltage by Tuning Crystalline Microstructures in Metal Gate ElectrodesOhmori, K. / Chikyow, T. / Hosoi, T. / Watanabe, H. / Nakajima, K. / Adachi, T. / Ishikawa, A. / Sugita, Y. / Nara, Y. / Ohji, Y. et al. | 2007
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Clarification of Additional Mobility Components associated with TaC and TiN Metal Gates in scaled HfSiON MOSFETs down to sub-1.0nm EOTTatsumura, Kosuke / Goto, Masakazu / Kawanaka, Shigeru / Nakajima, Kazuaki / Schimizu, Tatsuo / Ishihara, Takamitsu / Koyama, Masato et al. | 2007
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Impact of flash annealing on performance and reliability of high-κ/metal-gate MOSFETs for sub-45 nm CMOSKalra, Pankaj / Majhi, Prashant / Heh, Dawei / Bersuker, Gennadi / Young, Chadwin / Vora, Nikhil / Harris, Rusty / Kirsch, Paul / Choi, Rino / Chang, Man et al. | 2007
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Emerging Technologies - Energy Harvesting Electron DevicesWhite, Bruce et al. | 2007
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Developments in Silicon Solar CellsSwanson, Richard M. et al. | 2007
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Energy Harvesting - A Systems PerspectiveRabaey, J. / Burghardt, F. / Steingart, D. / Seeman, M. / Wright, P. et al. | 2007
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Energy Harvesting for Electronics with Thermoelectric Devices using Nanoscale MaterialsVenkatasubramanian, Rama / Watkins, Cynthia / Stokes, David / Posthill, John / Caylor, Chris et al. | 2007
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Nanogenerators and NanopiezotronicsWang, Zhong Lin et al. | 2007
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Micro-Engineered Devices for Motion Energy HarvestingYeatman, Eric M. / Mitcheson, Paul D. / Holmes, Andrew S. et al. | 2007
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Quantum, Power, and Compound Semiconductors - Reliability and Characterization Of Power HEMTsKizilyalli, Isik C. / Chen, Kevin J. et al. | 2007
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A review of failure modes and mechanisms of GaN-based HEMTsZanoni, Enrico / Meneghesso, Gaudenzio / Verzellesi, Giovanni / Danesin, Francesca / Meneghini, Matteo / Rampazzo, Fabiana / Tazzoli, Augusto / Zanon, Franco et al. | 2007
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Gate Current Degradation Mechanisms of GaN High Electron Mobility TransistorsJoh, Jungwoo / Xia, Ling / del Alamo, Jesus A. et al. | 2007
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Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma TreatmentYi, Congwen / Wang, Ruonan / Huang, Wei / Tang, Wilson C.-W. / Lau, K. M. / Chen, Kevin J. et al. | 2007
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Drain Corrosion in RF Power GaAs PHEMTsVillanueva, A. / del Alamo, J.A. / Hisaka, T. / Ishida, T. et al. | 2007
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Remarkable Breakdown Voltage Enhancement in AlGaN Channel HEMTsNanjo, Takuma / Takeuchi, Misaichi / Suita, Muneyoshi / Abe, Yuji / Oishi, Toshiyuki / Tokuda, Yasunori / Aoyagi, Yoshinobu et al. | 2007
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Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substratesMeneghesso, G. / Ongaro, C. / Zanoni, E. / Brylinski, C. / di Forte-Poisson, M. A. / Hoel, V. / de Jaeger, J.C. / Langer, R. / Lahreche, H. / Bove, P. et al. | 2007
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High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power DensityWu, Y.-F. / Moore, M. / Abrahamsen, A. / Jacob-Mitos, M. / Parikh, P. / Heikman, S. / Burk, A. et al. | 2007
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Displays, Sensors, and MEMS - RF MEMSWeber, Werner / Friedman, Thomas A. et al. | 2007
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Scalable 1.1 GHz fundamental mode piezo-resistive silicon MEMS resonatorvan Beek, J.T.M. / Verheijden, G.J.A.M. / Koops, G.E.J. / Phan, K.L. / van der Avoort, C. / van Wingerden, J. / Badaroglu, D. Ernur / Bontemps, J.J.M. et al. | 2007
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Internal Dielectric Transduction of a 4.5 GHz Silicon Bar ResonatorWeinstein, Dana / Bhave, Sunil A. et al. | 2007
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Single-Resonator Dual-Frequency Thin-Film Piezoelectric-on-Substrate OscillatorAbdolvand, Reza / Mirilavasani, Hossein / Ayazi, Farrokh et al. | 2007
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Integrated MEMS LC Resonator with Sealed Air-Suspended Structure for Single-Chip RF LSIsKuwabara, K. / Sato, N. / Morimura, H. / Kodate, J. / Nakamura, M. / Ugajin, M. / Kamei, T. / Kudou, K. / Machida, K. / Ishii, H. et al. | 2007
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Variable Capacitors and Tunable LC-Tanks Formed by CMOS-Compatible Metal MEMS for RF ICsGu, Lei / Li, Xinxin et al. | 2007
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MEMS Variable Capacitor Actuated with an Electrically Floating PlateYoon, Young Jun / Lee, Hyung Suk / Yoon, Jun-Bo et al. | 2007
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High Reproducibility and Reliability of Piezoelectric MEMS Tunable Capacitors for Reconfigurable RF Front-endKawakubo, T. / Nagano, T. / Nishigaki, M. / Itaya, K. et al. | 2007
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Maneuvering Pull-in Voltage of an Electrostatic Micro-switch by Introducing a Pre-charged ElectrodeYang, Hyun-Ho / Lee, Jeong Oen / Yoon, Jun-Bo et al. | 2007
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Integrated Circuits & Manufacturing - Nonvolatile MemoriesPrall, Kirk / Specth, Michael et al. | 2007
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A High-performance Multi-level NAND Flash Memory with 43nm-node Floating-gate TechnologyNoguchi, M. / Yaegashi, T. / Koyama, H. / Morikado, M. / Ishibashi, Y. / Ishibashi, S. / Ino, K. / Sawamura, K. / Aoi, T. / Maruyama, T. et al. | 2007
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Optimal Integration and Characteristics of Vertical Array Devices for Ultra-High Density, Bit-Cost Scalable Flash MemoryFukuzumi, Yoshiaki / Katsumata, Ryota / Kito, Masaru / Kido, Masaru / Sato, Mitsuru / Tanaka, Hiroyasu / Nagata, Yuzo / Matsuoka, Yasuyuki / Iwata, Yoshihisa / Aochi, Hideaki et al. | 2007
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Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applicationsMolas, G. / Bocquet, M. / Buckley, J. / Colonna, J. P. / Masarotto, L. / Grampeix, H. / Martin, F. / Vidal, V. / Toffoli, A. / Brianceau, P. et al. | 2007
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Novel Ultra-Low Voltage and High-Speed Programming/Erasing Schemes for SONOS Flash Memory with Excellent Data RetentionChung, Steve S. / Tseng, Y. H. / Lai, C. S. / Hsu, Y. Y. / Ho, Eric / Chen, Terry / Peng, L. C. / Chu, C. H. et al. | 2007
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Write Strategies for 2 and 4-bit Multi-Level Phase-Change MemoryNirschl, T. / Philipp, J. B. / Happ, T. D. / Burr, G. W. / Rajendran, B. / Lee, M.-H. / Schrott, A. / Yang, M. / Breitwisch, M. / Chen, C.-F. et al. | 2007
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CMOS Devices - Device/Design InteractionHorstmann, Manfred / Mahnkopf, Reinhard et al. | 2007
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Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and TechnologiesTakeuchi, K. / Fukai, T. / Tsunomura, T. / Putra, A. T. / Nishida, A. / Kamohara, S. / Hiramoto, T. et al. | 2007
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Reducing Variation in Advanced Logic Technologies: Approaches to Process and Design for Manufacturability of Nanoscale CMOSKuhn, Kelin J. et al. | 2007
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Controllable Inverter Delay and Suppressing Vth Fluctuation Technology in Silicon on Thin BOX Featuring Dual Back-Gate Bias ArchitectureTsuchiya, Ryuta / Ishigaki, Takashi / Morita, Yusuke / Yamaoka, Masanao / Iwamatsu, Toshiaki / Ipposhi, Takashi / Oda, Hidekazu / Sugii, Nobuyuki / Kimura, Shin'ichiro / Itoh, Kiyoo et al. | 2007
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Measurements of Inter-and-Intra Device Transient Thermal Transport on SOI FETsSolomon, P. M. / Shamsa, M. / Jenkins, K. A. / D'Emic, C. P. / Balandin, A. A. / Haensch, W. et al. | 2007
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An Effective Switching Current Methodology to Predict the Performance of Complex Digital Circuitsvon Arnim, Klaus / Pacha, Christian / Hofmann, Karl / Schulz, Thomas / Schrufer, Klaus / Berthold, Jorg et al. | 2007
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Direct evaluation of DC characteristic variability in FinFET SRAM Cell for 32 nm node and beyondInaba, Satoshi / Kawasaki, Hirohisa / Okano, Kimitoshi / Izumida, Takashi / Yagishita, Atsushi / Kaneko, Akio / Ishimaru, Kazunari / Aoki, Nobutoshi / Toyoshima, Yoshiaki et al. | 2007
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CMOS & Interconnect Reliability - Advanced Dielectric ReliabilityPey, Kin Leong / Furusawa, Takeshi et al. | 2007
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On the progressive breakdown statistical distribution and its voltage accelerationWu, Ernest / Tous, Santi / Sune, Jordi et al. | 2007
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Multiple Digital Breakdowns and Its Consequence on Ultrathin Gate Dielectrics Reliability PredictionLo, V. L. / Pey, K. L. / Tung, C. H. / Li, X. et al. | 2007
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TDDB Reliability Prediction Based on the Statistical Analysis of Hard Breakdown Including Multiple Soft Breakdown and Wear-outSahhaf, S. / Degraeve, R. / Roussel, Ph. J. / Kauerauf, T. / Kaczer, B. / Groeseneken, G. et al. | 2007
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Multi-probe Two-Dimensional Mapping of Off-State Degradation in DeNMOS Transistors: How and Why Interface Damage Predicts Gate Dielectric BreakdownVarghese, D. / Kufluoglu, H. / Reddy, V. / Shichijo, H. / Mosher, D. / Krishnan, S. / Alam, M. A. et al. | 2007
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Designing Reliable Systems with Unreliable Devices Challenges and OpportunitiesBenini, Luca et al. | 2007
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Copper Wiring Encapsulation with Ultra-thin Barriers to Enhance Wiring and Dielectric Reliabilities for 32-nm Nodes and BeyondKudo, H. / Haneda, M / Ochimizu, H. / Tsukune, A. / Okano, S. / Ohtsuka, N. / Sunayama, M. / Sakai, H. / Suzuki, T. / Kitada, H. et al. | 2007
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Process Technology - Gate Stack Process II - Metal Gate / High K IntegrationEguchi, Kazuhiro / Colombo, Luigi et al. | 2007
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Feasible Integration Scheme for Dual Work Function FUSI/HfSiON Gate Stacks with Selective Metal Pile-up to nMOSFETTsuchiya, Yoshinori / Yoshiki, Masahiko / Kaneko, Akio / Inumiya, Seiji / Saito, Tomohiro / Nakajima, Kazuaki / Aoyama, Tomonori / Koga, Junji / Nishiyama, Akira / Koyama, Masato et al. | 2007
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Gate-First Processed FUSI/HfO2/HfSiOx/Si MOSFETs with EOT=0.5 nm - Interfacial Layer Formation by Cycle-by-Cycle Deposition and AnnealingTakahashi, M. / Ogawa, A. / Hirano, A. / Kamimuta, Y. / Watanabe, Y. / Iwamoto, K. / Migita, S. / Yasuda, N. / Ota, H. / Nabatame, T. et al. | 2007
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Single Metal/Dual High-k Gate Stack with Low Vth and Precise Gate Profile Control for Highly Manufacturable Aggressively Scaled CMISFETsMise, N. / Morooka, T. / Eimori, T. / Kamiyama, S. / Murayama, K. / Sato, M. / Ono, T. / Nara, Y. / Ohji, Y. et al. | 2007
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Practical dual-metal-gate dual-high-k CMOS integration technology for hp 32 nm LSTP utilizing process-friendly TiAlN metal gateKadoshima, M. / Matsuki, T. / Sato, M. / Aminaka, T. / Kurosawa, E. / Ohta, A. / Yoshinaga, H. / Miyazaki, S. / Shiraishi, K. / Yamabe, K. et al. | 2007
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A Dy2O3-capped HfO2 Dielectric and TaCx-based Metals Enabling Low-Vt Single-Metal-Single-Dielectric Gate StackChang, V. S. / Ragnarsson, L.-A. / Pourtois, G. / O'Connor, R. / Adelmann, C. / Van Elshocht, S. / Delabie, A. / Swerts, J. / Van der Heyden, N. / Conard, T. et al. | 2007
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Band Edge Gate First HfSiON/Metal Gate n-MOSFETs using ALD-La2O3 Cap Layers Scalable to EOT=0.68 nm for hp 32 nm Bulk Devices with High Performance and ReliabilityKamiyama, Satoshi / Miura, Takayoshi / Kurosawa, Etsuo / Kitajima, Masashi / Ootuka, Minoru / Aoyama, Takayuki / Nara, Yasuo et al. | 2007
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Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and BeyondSivasubramani, P. / Kirsch, P. D. / Huang, J. / Park, C. / Tan, Y. N. / Gilmer, D. C. / Young, C. / Freeman, K. / Hussain, M. M. / Harris, R. et al. | 2007
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Modeling & Simulation - Development And Applications Of Compact Models For Advanced Circuit DesignKlaassen, Dirk / Jallepalli, Srinivas et al. | 2007
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A Unified Compact Model of the Gate Oxide Reliability for Complete Circuit Level AnalysisLee, Chi-Hwan / Yang, Gi-Young / Park, Jin-Kyu / Park, Young-Kwan / Kim, Hyung-Wook / Park, Donggun / Yoo, Moon-Hyun et al. | 2007
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A predictive analytical model of 3D MIM capacitors for RC ICSegura, Noel / Cremer, Sebastien / Gloria, Daniel / Ciampolini, Lorenzo / Picollet, Eric / Minondo, Michel et al. | 2007
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Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditionsReggiani, Susanna / Silvestri, Luca / Cacciatori, Alessio / Gnani, Elena / Gnudi, Antonio / Baccarani, Giorgio et al. | 2007
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A new model for 1/f noise in high-κ MOSFETsMorshed, Tanvir / Devireddy, Siva Prasad / Rahman, M. Shahriar / Celik-Butler, Zeynep / Tseng, Hsing-Huang / Zlotnicka, Ania / Shanware, Ajit / Green, Keith / Chambers, J. J. / Visokay, M. R. et al. | 2007
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A Multi-Gate MOSFET Compact Model Featuring Independent-Gate OperationLu, Darsen D. / Dunga, Mohan V. / Lin, Chung-Hsun / Niknejad, Ali M. / Hu, Chenming et al. | 2007
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High Performance CMOS Variability in the 65nm Regime and BeyondNassif, Sani / Bernstein, Kerry / Frank, David J. / Gattiker, Anne / Haensch, Wilfried / Ji, Brian L. / Nowak, Ed / Pearson, Dale / Rohrer, Norman J. et al. | 2007
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Rapid Circuit-based Optimization of Low Operational Power CMOS DevicesChristie, P. / Nackaerts, A. / Hoffmann, T. / Kumar, A. et al. | 2007
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Displays, Sensors, and MEMS - TFTs, Displays and MemoriesHatano, Mutsuko / Milne, William et al. | 2007
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ZnO Thin Film Transistor Ring Oscillators with sub 75 nsec Propagation DelaySun, Jie / Mourey, Devin A. / Zhao, Dalong / Park, Sung Kyu / Nelson, Shelby F. / Levy, David H. / Freeman, Diane / Cowdery-Corvan, Peter / Lee. Tutt, / Jackson, Thomas N. et al. | 2007
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New Approach for Passivation of Ga2O3-In2O3-ZnO Thin Film TransistorsKim, Sun Il / Kim, Chang Jung / Park, Jae Chul / Song, Ihun / Kang, Dong Hun / Lim, Hyuck / Kim, Sang Wook / Lee, Eunha / Lee, Jae Chul / Park, Youngsoo et al. | 2007
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High performance transparent thin film transistors based on indium gallium zinc oxide as the channel materialSuresh, Arun / Wellenius, Patrick / Muth, John F. et al. | 2007
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Sub-Micron CMOS / MOS-Bipolar Hybrid TFTs for System DisplaysKawachi, G. / Okada, T. / Tsuboi, S. / Mitani, M. et al. | 2007
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New In-Situ Process of Top Gate Nanocrystalline Silicon Thin Film Transistors Fabricated at 180 °C for the Suppression of Leakage CurrentPark, Joong-Hyun / Han, Sang-Myeon / Choi, Young-Hwan / Kim, Sun-Jae / Han, Min-Koo et al. | 2007
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Uniform High Current Field Emission of Electrons from Si and CNF FEAs Individually Controlled by Si Pillar Ungated FETsVelasquez-Garcia, L. F. / Adeoti, B. / Niu, Y. / Akinwande, A. I. et al. | 2007
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Compact Nano-Electro-Mechanical Non-Volatile Memory (NEMory) for 3D IntegrationChoi, Woo Young / Kam, Hei / Lee, Donovan / Lai, Joanna / Liu, Tsu-Jae King et al. | 2007
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Quantum, Power, and Compound Semiconductors - III-V FETs for Microwave, Millimiter Wave and Digital ApplicationsMicovic, Miroslav / Fay, Patrick et al. | 2007
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Sub 50 nm InP HEMT Device with Fmax Greater than 1 THzLai, R. / Mei, X. B. / Deal, W. R. / Yoshida, W. / Kim, Y. M. / Liu, P. H. / Lee, J. / Uyeda, J. / Radisic, V. / Lange, M. et al. | 2007
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610 GHz InAlAs/In0.75GaAs Metamorphic HEMTs with an Ultra-Short 15-nm-GateYeon, Seong-Jin / Park, Myonghwan / Choi, JeHyuk / Seo, Kwangseok et al. | 2007
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0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applicationsChou, Y. C. / Lange, M. D. / Bennett, B. R. / Boos, J. B. / Yang, J. M. / Papanicolaou, N. A. / Lin, C. H. / Lee, L. J. / Nam, P. S. / Gutierrez, A. L. et al. | 2007
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High Mobility III-V MOSFETs For RF and Digital ApplicationsPasslack, M. / Zurcher, P. / Rajagopalan, K. / Droopad, R. / Abrokwah, J. / Tutt, M. / Park, Y.-B. / Johnson, E. / Hartin, O. / Zlotnicka, A. et al. | 2007
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Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applicationsHudait, M. K. / Dewey, G. / Datta, S. / Fastenau, J. M. / Kavalieros, J. / Liu, W. K. / Lubyshev, D. / Pillarisetty, R. / Rachmady, W. / Radosavljevic, M. et al. | 2007
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Logic Performance of 40 nm InAs HEMTsKim, Dae-Hyun / del Alamo, Jesus A. et al. | 2007
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90 nm Self-aligned Enhancement-mode InGaAs HEMT for Logic ApplicationsWaldron, Niamh / Kim, Dae-Hyun / del Alamo, Jesus A. et al. | 2007
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High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectricsXuan, Y. / Wu, Y. Q. / Shen, T. / Yang, T. / Ye, P. D. et al. | 2007
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Device/Circuit Interactions in Highly-Scaled CMOS: Challenges and Potential SolutionsBrederlow, Ralf et al. | 2007
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Technology Circuit Co-Design for High Performance LogicBernstein, Kerry / Rohrer, Norman J. et al. | 2007
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Variability Mitigation in Highly Scaled CMOS: Challenges for EDAKahng, Andrew B. et al. | 2007
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Leakage Reduction in Sub-100nm CMOS Technologies: Bridging the Gap Between Technology, Circuit Design and Low Power Product RequirementsPacha, Christian / Berthold, Jorg et al. | 2007
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An Adaptive Design of SRAM Memory CellIshibashi, Koichiro et al. | 2007
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Looking Beyond Silicon - A Pipe Dream or the Inevitable Next Step?Antoniadis, Dimitri et al. | 2007
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Quantum, Power, & Compound Semiconductors - Ultra High Speed SiGe and InP-based HBTsGhione, Giovanni / Ida, Minoru et al. | 2007
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SiGe BiCMOS Technology with 3.0 ps Gate DelayRucker, H. / Heinemann, B. / Barth, R. / Bauer, J. / Blum, K. / Bolze, D. / Drews, J. / Fischer, G. G. / Fox, A. / Fursenko, O. et al. | 2007
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A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base ProcessDonkers, J.J.T.M. / Kramer, M.C.J.C.M. / Van Huylenbroeck, S. / Choi, L.J. / Meunier-Beillard, P. / Sibaja-Hernandez, A. / Boccardi, G. / van Noort, W. / Hurkx, G.A.M. / Vanhoucke, T. et al. | 2007
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Electrically pumped Ge Laser at room temperatureCheng, T. -H. / Kuo, P. -S. / Lee, C. T. / Liao, M. H. / Hung, T. A. / Liu, C. W. et al. | 2007
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Type-II GaAsSb/InP DHBTs with Record fT = 670 GHz and Simultaneous fT, fMAX ≫ 400 GHzSnodgrass, William / Wu, Bing-Ruey / Cheng, K. Y. / Feng, Milton et al. | 2007
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600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT x BVCEO ≫ 2.5 THz-V at Room TemperatureLiu, H.G. / Ostinelli, O. / Zeng, Y. / Bolognesi, C.R. et al. | 2007
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High-Speed InP HBT Technology for Advanced Mixed-signal and Digital ApplicationsMonier, C. / Scott, D. / D'Amore, M. / Chan, B. / Dang, L. / Cavus, A. / Kaneshiro, E. / Nam, P. / Sato, K. / Cohen, N. et al. | 2007
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Process Technology - Advanced Process & Integration TechnologyDe Salvo, Barbara / Lee, Tze-Liang et al. | 2007
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Embedded Flash on 90nm Logic Technology & Beyond for FPGAsKojima, H. / Ema, T. / Anezaki, T. / Ariyoshi, J. / Ogawa, H. / Yoshizawa, K. / Mehta, S. / Fong, S. / Logie, S. / Smoak, R. et al. | 2007
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Gatestacks for scalable high-performance FinFETsVellianitis, G. / van Dal, M.J.H. / Witters, L. / Curatola, G. / Doornbos, G. / Collaert, N. / Jonville, C. / Torregiani, C. / Lai, L.-S. / Petry, J. et al. | 2007
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Route to Low Parasitic Resistance in MuGFETs with Silicon-Carbon Source/Drain: Integration of Novel Low Barrier Ni(M)Si:C Metal Silicides and Pulsed Laser AnnealingLee, Rinus Tek-Po / Koh, Alvin Tian-Yi / Liu, Fang-Yue / Fang, Wei-Wei / Liow, Tsung-Yang / Tan, Kian-Ming / Lim, Poh-Chong / Lim, Andy Eu-Jin / Zhu, Ming / Hoe, Keat-Mun et al. | 2007
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Si/SiGe Epitaxy: a Ubiquitous Process for Advanced ElectronicsDutartre, D. / Loubet, N. / Brossard, F. / Vandelle, B. / Chevalier, P. / Chantre, A. / Monfray, S. / Fenouillet-Beranger, C. / Pouydebasque, A. / Skotnicki, T. et al. | 2007
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Localized SOI technology: an innovative Low Cost self-aligned process for Ultra Thin Si-film on thin BOX integration for Low Power applicationsMonfray, S. / Samson, MP. / Dutartre, D. / Ernst, T. / Rouchouze, E. / Renaud, D. / Guillaumot, B. / Chanemougame, D. / Rabille, G. / Borel, S. et al. | 2007
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Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process FlowTakahashi, T. / Nishimura, T. / Chen, L. / Sakata, S. / Kita, K. / Toriumi, A. et al. | 2007
- 701
-
CMOS Devices - Physics and Technologies of Mobility EnhancementTakagi, Shinichi / Clerc, Raphael et al. | 2007
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Extension of Universal Mobility Curve to Multi-Gate MOSFETsYoshimoto, Hiroyuki / Sugii, Nobuyuki / Hisamoto, Digh / Saito, Shin-ichi / Tsuchiya, Ryuta / Kimura, Shin'ichiro et al. | 2007
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More-than-Universal Mobility in Double-Gate SOI p-FETs with Sub-10-nm Body Thickness -Role of Light-Hole Band and Compatibility with Uniaxial Stress EngineeringKobayashi, Shigeki / Saitoh, Masumi / Uchida, Ken et al. | 2007
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Physical Understanding of Fundamental Properties of Si (110) pMOSFETs Inversion-Layer Capacitance, Mobility Universality, and Uniaxial Stress EffectsSaitoh, Masumi / Kobayashi, Shigeki / Uchida, Ken et al. | 2007
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Mobility Enhancement in Uniaxially Strained (110) Oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of Less Than 4 nmShimizu, Ken / Hiramoto, Toshiro et al. | 2007
- 719
-
Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETsWeber, O. / Irisawa, T. / Numata, T. / Harada, M. / Taoka, N. / Yamashita, Y. / Yamamoto, T. / Sugiyama, N. / Takenaka, M. / Takagi, S. et al. | 2007
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Interface-Engineered Ge (100) and (111), N- and P-FETs with High MobilityKuzum, Duygu / Pethe, Abhijit J. / Krishnamohan, Tejas / Oshima, Yasuhiro / Sun, Yun / McVittie, Jim P. / Pianetta, Piero A. / McIntyre, Paul C. / Saraswat, Krishna C. et al. | 2007
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High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology NodeSuthram, S. / Majhi, P. / Sun, G. / Kalra, P. / Harris, H. R. / Choi, K. J. / Heh, D. / Oh, J. / Kelly, D. / Choi, R. et al. | 2007
- 731
-
Modeling & Simulation - Nanotubes, Nanowires, and NanoribbonsIannaccone, Giuseppe / Sano, Nobuyuki et al. | 2007
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-
Three-dimensional Modeling of Gate Leakage in Si Nanowire TransistorsLuisier, Mathieu / Schenk, Andreas / Fichtner, Wolfgang et al. | 2007
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Band Structure Effects on the Current-Voltage Characteristics of SNW-FETsGnani, Elena / Gnudi, Antonio / Reggiani, Susanna / Rudan, Massimo / Baccarani, Giorgio et al. | 2007
- 741
-
1-D and 2-D Devices Performance Comparison Including Parasitic Gate Capacitance and Screening EffectWei, Lan / Deng, Jie / Wong, H.-S. Philip et al. | 2007
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-
Exciton generation in suspended carbon nanotube FETs: a computational studyKoswatta, Siyuranga O. / Perebeinos, Vasili / Lundstrom, Mark S. / Avouris, Phaedon et al. | 2007
- 749
-
A Comprehensive Atomic Study of Carbon Nanotube Schottky Diode Using First Principles ApproachBai, Ping / Lam, Kai Tak / Li, Erping / Chang, Ken Kai-fu et al. | 2007
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-
Analytical Model of Carbon Nanotube Electrostatics: Density of States, Effective Mass, Carrier Density, and Quantum CapacitanceAkinwande, Deji / Nishi, Yoshio / Wong, H.-S. Philip et al. | 2007
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Performance Comparison of Graphene Nanoribbon Schottky Barrier and MOS FETsFiori, Gianluca / Yoon, Youngki / Hong, Seokmin / Iannaccone, Giuseppe / Guo, Jing et al. | 2007
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-
Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB MethodGuan, Ximeng / Zhang, Ming / Liu, Qiang / Yu, Zhiping et al. | 2007
- 765
-
Solid-State and Nanoelectronic Devices - Emerging Resistive RAM and New Function On SiliconSeo, Sunae / Gautier, Jacques et al. | 2007
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Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 VTsunoda, K. / Kinoshita, K. / Noshiro, H. / Yamazaki, Y. / Iizuka, T. / Ito, Y. / Takahashi, A. / Okano, A. / Sato, Y. / Fukano, T. et al. | 2007
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2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM ApplicationsLee, Myoung-Jae / Park, Youngsoo / Kang, Bo-Soo / Ahn, Seung-Eon / Lee, Changbum / Kim, Kihwan / Xianyu, Wenxu. / Stefanovich, G. / Lee, Jung-Hyun / Chung, Seok-Jae et al. | 2007
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Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAMRusso, U. / Ielmini, D. / Cagli, C. / Lacaita, A. L. / Spiga, S. / Wiemer, C. / Perego, M. / Fanciulli, M. et al. | 2007
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Fast switching and long retention Fe-O ReRAM and its switching mechanismMuraoka, S. / Osano, K. / Kanzawa, Y. / Mitani, S. / Fujii, S. / Katayama, K. / Katoh, Y. / Wei, Z. / Mikawa, T. / Arita, K. et al. | 2007
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A Novel Resistance Memory with High Scalability and Nanosecond SwitchingAratani, K. / Ohba, K. / Mizuguchi, T. / Yasuda, S. / Shiimoto, T. / Tsushima, T. / Sone, T. / Endo, K. / Kouchiyama, A. / Sasaki, S. et al. | 2007
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A Silicon Photonics Approach for the Nanotechnology EraOhashi, K. / Nishi, K. / Shimizu, T. / Nakada, M. / Fujikata, J. / Ushida, J. / Gomyo, A. / Ishi, T. / Nose, K. / Mizuno, M. et al. | 2007
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Single-electron circuit for stochastic data processing using nano-MOSFETsNishiguchi, Katsuhiko / Fujiwara, Akira et al. | 2007
- 795
-
CMOS and Interconnect Reliability - Negative Bias Temperature InstabilityBersuker, Gennadi / Suehle, John et al. | 2007
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New characterization and modeling approach for NBTI degradation from transistor to product levelHuard, V. / Parthasarathy, C. / Rallet, N. / Guerin, C. / Mammase, M. / Barge, D. / Ouvrard, C. et al. | 2007
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Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature InstabilityGrasser, T. / Kaczer, B. / Hehenberger, P. / Gos, W. / O'Connor, R. / Reisinger, H. / Gustin, W. / Schlunder, C. et al. | 2007
- 805
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Theory and Practice of On-the-fly and Ultra-fast VT Measurements for NBTI Degradation: Challenges and OpportunitiesIslam, A.E. / Kumar, E. N. / Das, H. / Purawat, S. / Maheta, V. / Aono, H. / Murakami, E. / Mahapatra, S. / Alam, M.A. et al. | 2007
- 809
-
Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN TechniqueKumar, E. N. / Maheta, V. D. / Purawat, S. / Islam, A. E. / Olsen, C. / Ahmed, K. / Alam, M. A. / Mahapatra, S. et al. | 2007
- 813
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On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate DielectricLiu, W.J. / Liu, Z.Y. / Huang, Daming / Liao, C.C. / Zhang, L.F. / Gan, Z.H. / Wong, Waisum / Shen, C. / Li, Ming-Fu et al. | 2007
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Real Vth instability of pMOSFETs under practical operation conditionsZhang, J. F. / Ji, Z. / Chang, M. H. / Kaczer, B. / Groeseneken, G. et al. | 2007
- 821
-
New Observations on the Hot Carrier and NBTI Reliability of Silicon Nanowire TransistorsWang, Runsheng / Huang, Ru / Kim, Dong-Won / He, Yandong / Wang, Zhenhua / Jia, Gaosheng / Park, Donggun / Wang, Yangyuan et al. | 2007
- 825
-
Impact of TiN Metal gate on NBTI assessed by interface states and fast transient effect characterizationRafik, M. / Garros, X. / Ribes, G. / Ghibaudo, G. / Hobbs, C. / Zauner, A. / Muller, M. / Huard, V. / Ouvrard, C. et al. | 2007
- 829
-
Displays, Sensors, and MEMS - Chemical and Biological Sensors, and MicrosystemsGardner, Julian / van Beek, Joost et al. | 2007
- 831
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Three technologies for a smart miniaturized gas-sensor: SOI CMOS, micromachining, and CNTs - challenges and performanceUdrea, F. / Maeng, S. / Gardner, J.W. / Park, J. / Haque, M.S. / Ali, S.Z. / Choi, Y. / Guha, P.K. / Vieira, S.M.C. / Kim, H.Y. et al. | 2007
- 835
-
AlGaN/GaN Heterostructure Field Effect Transistors for High Temperature Hydrogen Sensing with Enhanced SensitivitySong, Junghui / Lu, Wu et al. | 2007
- 839
-
Improved Liquid Phase Chromatography Separation using Sub-micron Micromachining TechnologyTezcan, Deniz Sabuncuoglu / Verbist, Agnes / De Malsche, Wim / Vangelooven, Joris / Eghbali, Hamed / Clicq, David / Desmet, Gert / De Moor, Piet et al. | 2007
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A Micro Ionizer for Portable Mass Spectrometers using Double-gated Isolated Vertically Aligned Carbon Nanofiber ArraysChen, L.-Y. / Velasquez-Garcia, L. F. / Wang, X. / Teo, K. / Akinwande, A. I. et al. | 2007
- 847
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Optoelectronic Tweezers for Manipulation of Cells and NanowiresWu, Ming C. et al. | 2007
- 851
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Integrated ZnO Surface Acoustic Wave Microfluidic and Biosensor SystemLee, D. S. / Fu, Y. Q. / Maeng, S. / Du, X. Y. / Tan, S. C. / Luo, J. K. / Flewitt, A. J. / Kim, S. H. / Park, N. M. / Choi, Y. J. et al. | 2007
- 855
-
Electrical measurement of adhesion and viability of living cells with a silicon chipBandiera, L. / Borgo, M. / Cellere, G. / De Toni, A. / Santoni, L. / Maschio, M. Dal / Girardi, S. / Lorenzelli, L. / Paccagnella, A. et al. | 2007
- 859
-
Quantum, Power, and Compound Semiconductors - High Voltage Power Devicesvan Rijs, Fred / Khemka, Vishnu et al. | 2007
- 861
-
8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN PassivationUemoto, Yasuhiro / Shibata, Daisuke / Yanagihara, Manabu / Ishida, Hidetoshi / Matsuo, Hisayoshi / Nagai, Shuichi / Batta, Nagaraj / Li, Ming / Ueda, Tetsuzo / Tanaka, Tsuyoshi et al. | 2007
- 865
-
650 V 3.1 mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistorMorita, Tatsuo / Yanagihara, Manabu / Ishida, Hidetoshi / Hikita, Masahiro / Kaibara, Kazuhiro / Matsuo, Hisayoshi / Uemoto, Yasuhiro / Ueda, Tetsuzo / Tanaka, Tsuyoshi / Ueda, Daisuke et al. | 2007
- 869
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Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter OperationSaito, Wataru / Kuraguchi, Masahiko / Takada, Yoshiharu / Tsuda, Kunio / Saito, Yasunobu / Omura, Ichiro / Yamaguchi, Masakazu et al. | 2007
- 873
-
High-performance p-channel diamond MOSFETs with alumina gate insulatorHirama, Kazuyuki / Takayanagi, Hidenori / Yamauchi, Shintaro / Jingu, Yoshikatsu / Umezawa, Hitoshi / Kawarada, Hiroshi et al. | 2007
- 877
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Stress-Induced Mobility Enhancement for Integrated Power TransistorsMoens, P. / Roig, J. / Clemente, F. / De Wolf, I. / Desoete, B. / Bauwens, F. / Tack, M. et al. | 2007
- 881
-
Impact of Self-Heating Effect on Hot Carrier Degradation in High-Voltage LDMOSCheng, Chih-Chang / Lin, J.F. / Wang, Tahui / Hsieh, T.H. / Tzeng, J.T. / Jong, Y.C. / Liou, R.S. / Pan, Samuel C. / Hsu, S.L. et al. | 2007
- 885
-
CMOS Devices - Advanced Device StructuresChang, Chih-Sheng / Hokazono, Akira et al. | 2007
- 887
-
Observation of Mobility Enhancement in Strained Si and SiGe Tri-Gate MOSFETs with Multi-Nanowire Channels Trimmed by Hydrogen Thermal EtchingTezuka, T. / Toyoda, E. / Nakaharai, S. / Irisawa, T. / Hirashita, N. / Moriyama, Y. / Sugiyama, N. / Taoka, N. / Yamashita, Y. / Kiso, O. et al. | 2007
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-
Investigation of nanowire size dependency on TSNWFETSuk, Sung Dae / Li, Ming / Yeoh, Yun Young / Yeo, Kyoung Hwan / Cho, Keun Hwi / Ku, In Kyung / Cho, Hong / Jang, WonJun / Kim, Dong-Won / Park, Donggun et al. | 2007
- 895
-
New Self-Aligned Silicon Nanowire Transistors on Bulk Substrate Fabricated by Epi-Free Compatible CMOS Technology: Process Integration, Experimental Characterization of Carrier Transport and Low Frequency noiseTian, Yu / Huang, Ru / Wang, Yiqun / Zhuge, Jing / Wang, Runsheng / Liu, Jia / Zhang, Xing / Wang, Yangyuan et al. | 2007
- 899
-
Experimental Investigation on Superior PMOS Performance of Uniaxial Strained ≪110≫ Silicon Nanowire Channel By Embedded SiGe Source/DrainLi, Ming / Yeo, Kyoung Hwan / Yeoh, Yun Young / Suk, Sung Dae / Cho, Keun Hwi / Kim, Dong-Won / Park, Donggun / Lee, Won-Seong et al. | 2007
- 903
-
A Novel Body Effect Reduction Technique to Recessed Channel Transistor Featuring Partially Insulating Layer Under Source and Drain : Application to Sub-50nm DRAM CellPark, Jong-Man / Sohn, Si-Ok / Park, Jung-Soo / Han, Sang-Yeon / Lee, Jun-Bum / Kim, Wookje / Jeon, Chang-Hoon / Kim, Shin-Deuk / Kim, Young-Pil / Lee, Yong-Seok et al. | 2007
- 907
-
Ultra-Low Leakage Silicon-on-Insulator Technology for 65 nm Node and BeyondCai, Jin / Majumdar, Amlan / Dobuzinsky, David / Ning, Tak H. / Koester, Steven J. / Haensch, Wilfried E. et al. | 2007
- 911
-
Solid-State and Nanoelectronic Devices - Nanoscale Flash and DRAM TechnologiesKrishnamohan, Tejas / Fung, Samuel et al. | 2007
- 913
-
A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFETHsu, Tzu-Hsuan / Lue, Hang-Ting / Lai, Erh-Kun / Hsieh, Jung-Yu / Wang, Szu-Yu / Yang, Ling-Wu / King, Ya-Chin / Yang, Tahone / Chen, Kuang-Chao / Hsieh, Kuang-Yeu et al. | 2007
- 917
-
Highly Scalable Vertical Double Gate NOR Flash MemoryCho, Hoon / Kapur, Pwan / Kalavade, Pranav / Saraswat, Krishna C. et al. | 2007
- 921
-
Advantages of the FinFET architecture in SONOS and Nanocrystal memory devicesLombardo, S. / Gerardi, C. / Breuil, L. / Jahan, C. / Perniola, L. / Cina, G. / Corso, D. / Tripiciano, E. / Ancarani, V. / Iannaccone, G. et al. | 2007
- 925
-
New Generation of Z-RAMOkhonin, S. / Nagoga, M. / Carman, E. / Beffa, R. / Faraoni, E. et al. | 2007
- 929
-
A Unified-RAM (URAM) Cell for Multi-Functioning Capacitorless DRAM and NVMHan, Jin-Woo / Ryu, Seong-Wan / Kim, Chungjin / Kim, Sungho / Im, Maesoon / Choi, Sung Jin / Kim, Jin Soo / Kim, Kwang Hee / Lee, Gi Sung / Oh, Jae Sub et al. | 2007
- 933
-
Extremely Low-voltage and High-speed Operation Bulk Thyristor-SRAM/DRAM (BT-RAM) Cell with Triple Selective Epitaxy Layers (TEL)Sugizaki, T. / Nakamura, M. / Yanagita, M. / Shinohara, M. / Ikuta, T. / Ohchi, T. / Kugimiya, K. / Kanda, S. / Yagami, K. / Oda, T. et al. | 2007
- 937
-
Modeling and Simulation - Simulation of Processes and Advanced MemoriesHane, Masami / Ghetti, Andrea et al. | 2007
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-
Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxationIelmini, D. / Lavizzari, S. / Sharma, D. / Lacaita, A. L. et al. | 2007
- 943
-
Physical Model for NAND operation in SOI and Body-Tied Nanocrystal FinFLASH memoriesPerniola, L. / Nowak, E. / Iannaccone, G. / Scheiblin, P. / Jahan, C. / Pananakakis, G. / Razafindramora, J. / De Salvo, B. / Deleonibus, S. / Reimbold, G. et al. | 2007
- 947
-
Development of A 3D Simulator for Metal Nanocrystal (NC) Flash Memories under NAND OperationNainani, A. / Palit, S. / Singh, P. K. / Ganguly, U. / Krishna, N. / Vasi, J. / Mahapatra, S. et al. | 2007
- 951
-
Current Capabilities and Future Prospects of Atomistic Process SimulationJaraiz, M. / Castrillo, P. / Pinacho, R. / Rubio, J. E. et al. | 2007
- 955
-
Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo ApproachNoda, T. / Vandervorst, W. / Felch, S. / Parihar, V. / Cuperus, A. / Mcintosh, R. / Vrancken, C. / Rosseel, E. / Bender, H. / Van Daele, B. et al. | 2007
- 959
-
Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers: Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation AnnealCho, Y. / Zographos, N. / Thirupapuliyur, S. / Moroz, V. et al. | 2007
- 963
-
Novel doping technology for a 1nm NiSi/Si junction with dipoles comforting Schottky (DCS) barrierYamauchi, Takashi / Nishi, Yoshifumi / Tsuchiya, Yoshinori / Kinoshita, Atsuhiro / Koga, Junji / Kato, Koichi et al. | 2007
- 967
-
Process Technology - Interconnect & 3D-IC'sIacoponi, John / Hasegawa, Toshiaki et al. | 2007
- 969
-
32 nm node Ultralow-k(k=2.1)/Cu Damascene Multilevel Interconnect using High-Porosity (50 %) High-Modulus (9 GPa) Self-Assembled Porous SilicaChikaki, S. / Kinoshita, K. / Nakayama, T. / Kohmura, K. / Tanaka, H. / Hirakawa, M. / Soda, E. / Seino, Y. / Hata, N. / Kikkawa, T. et al. | 2007
- 973
-
Cost-effective and High Performance Cu Interconnects (keff=2.75) with Continuous SiOCH Stack Incorporating a Low-k Barrier Cap (k=3.1)Ueki, M. / Yamamoto, H. / Ito, F. / Kawahara, J. / Tada, M. / Takeuchi, T. / Saito, S. / Furutake, N. / Onodera, T. / Hayashi, Y. et al. | 2007
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Bulk and interface band diagrams of advanced intermetal dielectricsGuedj, C. / Martinez, E. / Licitra, C. / Imbert, G. / Barnes, J.P. / Lafond, D. / Toffoli, A. / Arnal, V. / Anaud, L. et al. | 2007
- 981
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FR-4 and CMOS: Enabling Technologies for Consumer Volume Millimeterwave ApplicationsLaskar, J. / Pinel, S. / Dawn, D. / Sarkar, S. / Sen, P. / Perunama, B. / Yeh, D. et al. | 2007
- 985
-
New Three-Dimensional Integration Technology Based on Reconfigured Wafer-on-Wafer Bonding TechniqueFukushima, Takafumi / Kikuchi, Hirokazu / Yamada, Yusuke / Konno, Takayuki / Liang, Jun / Sasaki, Keiichi / Inamura, Kiyoshi / Tanaka, Tetsu / Koyanagi, Mitsumasa et al. | 2007
- 989
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Highly Reliable Thin MIM Capacitor on Metal (CoM) Structure with Vertical Scalability for Analog/RF ApplicationsInoue, N. / Kume, I. / Kawahara, J. / Furutake, N. / Toda, T. / Matsui, K. / Furumiya, M. / Iwaki, T. / Shida, S. / Hayashi, Y. et al. | 2007
- 993
-
Mass Production Worthy MIM Capacitor On Gate polysilicon(MIM-COG) Structure using HfO2/HfOxCyNz/HfO2 Dielectric for Analog/RF/Mixed Signal ApplicationPark, Jung-Min / Song, Min-Woo / Kim, Weon-Hong / Park, Pan-Kwi / Jung, Yong-Kuk / Kim, Ju-Youn / Won, Seok-Jun / Lee, Jong-Ho / Lee, Nae-In / Kang, Ho-Kyu et al. | 2007
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Toward next high performances MIM generation: up to 30fF/μm2 with 3D architecture and high-κ materialsJeannot, S. / Bajolet, A. / Manceau, J.-P. / Cremer, S. / Deloffre, E. / Oddou, J.-P. / Perrot, C. / Benoit, D. / Richard, C. / Bouillon, P. et al. | 2007
- 1001
-
Displays, Sensors, and MEMS - Imagers and Optical DetectorsPain, Bedabrata / Bosiers, Jan et al. | 2007
- 1003
-
A 0.5 μm pixel frame-transfer CCD image sensor in 110 nm CMOSFife, Keith / El Gamal, Abbas / Wong, H.-S. Philip et al. | 2007
- 1007
-
Development of a Production-Ready, Back-Illuminated CMOS Image Sensor with Small PixelsJoy, Tom / Pyo, Sunggyu / Park, Sunghyung / Choi, Changhoon / Palsule, Chintamani / Han, Hyungjun / Feng, Chen / Lee, Sangjoo / McKee, Jeff / Altice, Parker et al. | 2007
- 1011
-
Two-Transistor Active Pixel Sensor for High Resolution Large Area Digital X-ray ImagingTaghibakhsh, Farhad / Karim, Karim S. et al. | 2007
- 1015
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Fully Implantable Retinal Prosthesis Chip with Photodetector and Stimulus Current GeneratorTanaka, T. / Sato, K. / Komiya, K. / Kobayashi, T. / Watanabe, T. / Fukushima, T. / Tomita, H. / Kurino, H. / Tamai, M. / Koyanagi, M. et al. | 2007
- 1019
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3 D real-time CCD imager based on Background-Level-Subtraction schemeHashimoto, Y. / Kurihara, F. / Tsunesada, F. / Imai, K. / Takada, Y. / Taniguchi, K. et al. | 2007
- 1023
-
Potentiality of Silicon Optical Modulator Based on Free-Carrier AbsorptionTabei, Tetsuo / Hirata, Tomoki / Kajikawa, Kenta / Sunami, Hideo et al. | 2007
- 1029
-
Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm NodeOhuchi, Kazuya / Lavoie, Christian / Murray, Conal / D'Emic, Chris / Lauer, Isaac / Chu, Jack O. / Yang, Bin / Besser, Paul / Gignac, Lynne / Bruley, John et al. | 2007
- 1032
-
(110) channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (Rext) engineeringYang, B. / Waite, A. / Yin, H. / Yu, J. / Black, L. / Chidambarrao, D. / Domenicucci, A. / Wang, X. / Ku, S. H. / Wang, Y. et al. | 2007
- 1035
-
45nm SOI CMOS Technology with 3X hole mobility enhancement and Asymmetric transistor for high performance CPU applicationFung, Samuel K.H. / Lo, H.C. / Cheng, C.F. / Lu, W.Y. / Wu, K.C. / Chen, K.H. / Lee, D.H. / Liu, Y.H. / Wu, I.L. / Li, C.T. et al. | 2007
- 1038
-
Ferrite-Partially-Filled on-Chip RF Inductor Fabricated Using Low-Temperature Nano-Powder-Mixed-Photoresist Filling Technique for Standard CMOSYang, Chen / Liu, Feng / Ren, Tian-Ling / Liu, Li-Tian / Chen, Guang / Guan, Xiao-Kang / Wang, Albert / Yue, Zhen-Xing et al. | 2007
- 1041
-
High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/DrainYamamoto, Toyoji / Yamashita, Yoshimi / Harada, Masatomi / Taoka, Noriyuki / Ikeda, Keiji / Suzuki, Kunihiro / Kiso, Osamu / Sugiyama, Naoharu / Takagi, Shin-ichi et al. | 2007