Strained Si/SiGe technology: status and opportunities (Englisch)
- Neue Suche nach: Haensch, W.
- Neue Suche nach: Haensch, W.
In:
International Semiconductor Device Research Symposium, 2003
;
48
;
2003
-
ISBN:
- Aufsatz (Konferenz) / Elektronische Ressource
-
Titel:Strained Si/SiGe technology: status and opportunities
-
Beteiligte:Haensch, W. ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsdatum:01.01.2003
-
Format / Umfang:68048 byte
-
ISBN:
-
DOI:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2
-
LEDs for illumination: past, present and futureBohler, C. et al. | 2003
- 4
-
High-power GaN-based LEDs for lighting and display applicationsStockman, S.A. / Kim, A.Y. / Misra, M. / Grillot, P. / Cook, L. / Watanabe, S. / Mann, R. / Hudson, L. / Gotz, W. / Krames, M.R. et al. | 2003
- 5
-
Enhanced blue emission from Tm-doped Al/sub x/Ga/sub 1-x/N electroluminescent thin filmsLee, D.S. / Steckl, A.J. / Hommerich, U. / Nyein, E.E. / Rack, P. / Fitzgerald, J. / Zavada, J.M. et al. | 2003
- 7
-
Experimental analysis and a new model for the high ideality factors in GaN-based diodesShah, J.M. / Li, Y.-L. / Gessmann, T. / Schubert, E.F. et al. | 2003
- 9
-
ZnO-based metal-insulator-semiconductor UV light-emitting diodes prepared by ion implantationAlivov, Ya.I. / Look, D.C. / Chukichev, M.V. / Ataev, B.M. / Nikitenko, V.A. / Mamedov, V.V. / Zinenko, V.I. / Agafonov, Yu.A. et al. | 2003
- 12
-
On the scaling limits of low-frequency noise in SiGe HBTsJohansen, J. / Jin, Z. / Cressler, J.D. / Cui, Y. / Niu, G. / Liang, Q. / Rieh, J.-S. / Freeman, G. / Ahlgren, D. / Joseph, A. et al. | 2003
- 14
-
Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressingSheng, S.R. / McAlister, S.P. / McCaffrey, J.P. / Kovacic, S. et al. | 2003
- 16
-
Buried oxide thickness effect and lateral scaling of SiGe HBT on SOI substrateChang, S.T. / Liu, Y.H. / Liu, C.W. et al. | 2003
- 18
-
Integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivityPei Z, / Shi, J.-W. / Hsu, Y.-M. / Yuan, F. / Liang, C.-S. / Liu, C.W. / Pan, T.-M. / Lu, S.C. / Hsieh, W.-Y. / Tsai, M.-J. et al. | 2003
- 20
-
Si/SiGe terahertz quantum cascade emittersPaul, D.J. / Lynch, S.A. / Townsend, P. / Ikonic, Z. / Kelsall, R.W. / Harrison, P. / Liew, S.L. / Norris, D.J. / Cullis, A.G. / Zhang, J. et al. | 2003
- 22
-
Monolithically integrated Si/SiGe resonant interband tunneling diodes/CMOS MOBILE latch with high voltage swingSudirgo, S. / Nandgaonkar, R.P. / Curanovic, B. / Hebding, J. / Hirschman, K.D. / Islam, S.S. / Rommel, S.L. / Kurinec, S.K. / Thompson, P.E. / Jin, N. et al. | 2003
- 26
-
Interface composition and band alignment issues in high-K gate stacksSayan, S. / Goncharova, L. / Starodub, D. / Bartynski, R.A. / Zhao, X. / Vanderbilt, D. / Gustafsson, T. / Garfunkel, E. et al. | 2003
- 27
-
Electronic structure of high-k gate dielectrics - applications to tunnelingLucovsky, G. et al. | 2003
- 29
-
Conduction mechanism in high-k ZrO/sub 2/ gate dielectric films on strained-Ge layersBhattacharya, S. / Dalapati, G.K. / Das, S. / Chakraborty, S. / McCarthy, J. / Armstrong, B.M. / Gamble, H.S. / Maiti, C.K. / Perova, T. / Moore, A. et al. | 2003
- 31
-
Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVDVan Elshocht, S. / Brijs, B. / Caymax, M. / Conard, T. / De Gendt, S. / Kubicek, S. / Meuris, M. / Onsia, B. / Richard, O. / Teerlinck, I. et al. | 2003
- 33
-
Characterization of tunnel oxides for non-volatile memory (NVM) applicationsAckaert, J. / Vermeulen, T. / Lowe, A. / Boonen, S. / Yao, T. / Prasad, J. / Thomason, M. / Van Houdt, J. / Degraeve, R. / Haspeslagh, L. et al. | 2003
- 36
-
Telecom-wavelength electroluminescence from processible quantum dot nanocrystalsSargent, E.H. et al. | 2003
- 38
-
Hybrid inorganic/organic luminescent devicesSteckl, A.J. / Allen, S. / Heikenfeld, J. et al. | 2003
- 40
-
Microstructural examination of the influence of Si substrate orientation on the morphology of CdTe/ZnTe filmsSarney, W.L. / Brill, G. / Dhar, N.K. et al. | 2003
- 42
-
Preliminary study of As-for-Sb exchange for device applicationsSarmiento, T. / May, G.S. et al. | 2003
- 44
-
Design of photonic crystals fabricated from DNA latticesSauer, P. / Hong-Liang Cui, / Seeman, N.C. et al. | 2003
- 48
-
Strained Si/SiGe technology: status and opportunitiesHaensch, W. et al. | 2003
- 49
-
N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architecturesOlsen, S.H. / O'Neill, A.G. / Chattopadhay, S. / Driscoll, L.S. / Kwa, K.S.K. / Paul, D.J. / Zhang, J. et al. | 2003
- 51
-
The relative performance enhancement of strained-Si and buried channel p-MOS as a function of lithographic and effective gate lengthsTemple, M.P. / Paul, D.J. / Tang, Y.T. / Waite, A.M. / Evans, A.G.R. / O'Neill, A.G. / Zhang, J. / Grasby, T. / Parker, E.H.C. et al. | 2003
- 53
-
Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: reduced self-heating on DC and RF performanceHackbarth, T. / Herzog, H.-J. / Hieber, K.-H. / Konig, U. / Mantl, S. / Hollander, B. / St Lenk, / von Kanel, H. et al. | 2003
- 55
-
32 GHz and 40 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETsAbele, P. / Kallfass, I. / Schumacher, H. / Zeuner, M. / Muller, T. / Hackbarth, T. / Konig, U. / Chrastina, D. / von Kanel, H. et al. | 2003
- 57
-
Device design for a raised extrinsic base SiGe bipolar technologyHaralson, E. / Malm, G. / Ostling, M. et al. | 2003
- 60
-
Structure and stability of alternative gate dielectrics for Si CMOSStemmer, S. / Yan Yang, / Youli Li, / Foran, B. / Lysaght, P.S. / Gisby, J.A. / Taylor, J.R. / Streiffer, S.K. / Fuoss, P. / Seifert, S. et al. | 2003
- 62
-
Improved crystallization temperature and interfacial properties of HfO/sub 2/ gate dielectrics by adding Ta/sub 2/O/sub 5/ with TaN metal gateXiongfei Yu, / Chunxiang Zhu, / Qingchun Zhang, / Nan Wu, / Hang Hu, / Li, M.F. / Chin, A. / Chan, D.S.H. / Wang, W.D. / Dim-Lee Kwong, et al. | 2003
- 64
-
Composition, chemical structure and electronic band structure of rare earth oxide/Si(100) interfacial transition layerShankar Subramanian, R. et al. | 2003
- 66
-
A new approach to gate stack integrity based on mechanical and electrostatic strain relief in self-organized interfacial suboxide transition regionsLucovsky, G. / Phillips, J.C. et al. | 2003
- 68
-
The effects of nitrogen in HfO/sub 2/ for improved MOSFET performanceCho, H.-J. / Kang, C.Y. / Kang, C.S. / Choi, R. / Kim, Y.H. / Akbar, M.S. / Choi, C.H. / Rhee, S.J. / Lee, J.C. et al. | 2003
- 74
-
Luminescence of Pr and Tm ions implanted into AlN thin filmsJadwisienczak, W.M. / Lozykowski, H.J. / Bensaoula, A. / Monteiro, O. et al. | 2003
- 75
-
Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric filmsMunasinghe, C. / Heikenfeld, J. / Dorey, R. / Whatmore, R. / Bender, J. / Wager, J. / Steckl, A.J. et al. | 2003
- 77
-
Improved ESD reliability by using a modulation doped Al/sub 0.12/Ga/sub 0.88/N/GaN superlattice in nitride-based LEDWen, T.C. / Chang, S.J. / Su, Y.K. / Wu, L.W. / Kuo, C.H. / Hsu, Y.P. / Lai, W.C. / Sheu, J.K. et al. | 2003
- 79
-
Deep ultraviolet emission in AlGaN-based quantum wells on bulk AlN substratesFareed, Q. / Jain, R. / Gaska, R. / Tamulaitis, G. / Yilmaz, I. / Shur, M. / Kuokstis, E. / Khan, A. et al. | 2003
- 81
-
Nitride-based QD LEDsChang, S.J. / Su, Y.K. / Ji, L.W. / Chang, C.S. / Wu, L.W. / Lai, W.C. / Fang, T.H. / Lam, K.T. et al. | 2003
- 83
-
Dependence of film morphology on growth rate in ITO/TPD/Alq/sub 3//Al organic luminescent diodesMu, H. / Shen, H. / Klotzkin, D. et al. | 2003
- 86
-
A modified UTC-PD having high speed and efficiency characteristics utilizing a frequency compensationDong-Hwan Jun, / In-Ho Kang, / Jong-In Song, et al. | 2003
- 88
-
Analytical model for the InP/InGaAs uni-travelling carrier photodiodeSrivastava, S. / Roenker, K.P. et al. | 2003
- 90
-
Novel technology of Er-doped glassy films fabrication for applications in optoelectronicsKholodkov, A.V. / Golant, K.M. et al. | 2003
- 92
-
Mextram modeling of Si/SiGe heterojunction phototransistorsYuan, F. / Pei, Z. / Shi, J.W. / Chang, S.T. / Liu, C.W. et al. | 2003
- 94
-
Blue electroluminescence from MOS capacitors with Si-implanted SiO/sub 2/Matsuda, T. / Kawabe, M. / Nishihara, K. / Iwata, H. / Iwatsubo, S. / Ohzone, T. et al. | 2003
- 98
-
Compositional pulling effect in high Al-content AlGaN films grown on (0001) sapphire substratesYu-Li Tsai, / Cheng-Liang Wang, / Po-Hung Lin, / Wei-Tsai Liao, / Jyh-Rong Gong, et al. | 2003
- 100
-
Effect of high Al-content AlGaN/GaN short period strained-layer superlattices on the threading dislocations in GaN filmsCheng-Wei Huang, / Su-Fen Tseng, / Cheng-Liang Wang, / Yu-Li Tsai, / Wei-Tsai Liao, / Jyh-Rong Gong, / Wen-Jen Lin, / Long-Jang Hu, / Ya-Tung Cherng, et al. | 2003
- 102
-
Nitride-based devices fabricated by wet etchingChang, S.J. / Su, Y.K. / Kuan, T.M. / Ko, C.H. / Wei, S.C. / Lan, W.H. / Webb, J.B. / Cherng, Y.T. / Chen, S.C. et al. | 2003
- 104
-
Nitride-based HFETs with carrier confinement layersChang, S.J. / Su, Y.K. / Kuan, T.M. / Ko, C.H. / Wei, S.C. / Lan, W.H. / Cherng, Y.T. / Chen, S.C. et al. | 2003
- 106
-
Surface properties of Si-doped GaN filmsLin, T.Y. / Su, W.S. / Chen, Y.F. et al. | 2003
- 108
-
Ultra-high electric field transport in GaN-based heterostructuresVitusevich, S.A. / Danylyuk, S.V. / Danilchenko, B.A. / Klein, N. / Zelenskyi, S.E. / Budnik, A.P. / Avksentyev, A.Yu. / Sokolov, V.N. / Kochelap, V.A. / Belyaev, A.E. et al. | 2003
- 110
-
Growth parameter dependence of gain compression in AlGaN/GaN HFETsFaraclas, E. / Islam, S.S. / Anwar, A.F.M. et al. | 2003
- 112
-
Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing techniqueLee, J. / Liu, D. / Lu, W. et al. | 2003
- 114
-
Study of ZnO thin films grown by PLD on (100) Si for surface acoustic wave devicesChryssis, A.N. / Krishnamoorthy, S. / Iliadis, A.A. / Lee, U. et al. | 2003
- 118
-
Electron mobility model for silicon carbide inversion layersZeng, Y.A. / White, M.H. et al. | 2003
- 120
-
Numerical and experimental characterization of 4H-SiC Schottky diodesXiaohu Zhang, / Goldsman, N. / Bernstein, J.B. / McGarrity, J.M. / Powell, S.K. et al. | 2003
- 122
-
A new edge termination technique for SiC power devicesShuntao Hu, / Kuang Sheng, et al. | 2003
- 124
-
A new lateral insulated gate bipolar transistor for suppressing parasitic thyristor latch-up by employing a folded gateJae-Keun Oh, / Min-Woo Ha, / Yearn-Ik Choi, / Min-Koo Han, et al. | 2003
- 126
-
A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphereDerenge, M.A. / Jones, K.A. / Kirchner, K. / Ervin, M. et al. | 2003
- 128
-
Impurity and defect centers of n-type 4H-SiC single crystals investigated by a photoluminescence and a piezoelectric photo thermal spectroscopySakai, K. / Fukuyama, A. / Shigetomi, S. / Ikari, T. et al. | 2003
- 130
-
Silicon carbide ultraviolet photodetectorsSankin, V.I. / Shkrebiy, P.P. / Savkina, N.S. et al. | 2003
- 132
-
Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)Hasanuzzama, M. / Islam, S.K. / Tolbert, L.M. / Alam, M.T. et al. | 2003
- 134
-
A study of interface charges on the operation of 4H silicon carbide (SiC) static induction transistors (SITs)Fuerherm, J. / Yu Anne Zeng, / White, M.H. et al. | 2003
- 138
-
SPICE modeling of double diffused vertical power MOSFETs exposed to gamma radiationYanqing Deng, / Ytterdal, T. / Fjeldly, T.A. / Shur, M.S. et al. | 2003
- 140
-
Modeling C-V characteristics of deep sub - 0.1 micron mesoscale MOS devicesPesic, I. / Gunther, N. / Mutlu, A. / Rahman, M. et al. | 2003
- 142
-
A new wideband modeling technique for deep sub-micron MOSFETsMing Hsiang Chiou, / Hsu, K.Y.J. et al. | 2003
- 144
-
A simple method to split base-collector capacitance of bipolar junction transistorsSeonghearn Lee, et al. | 2003
- 146
-
Electrical environment within the silicon-on-insulator MOSFET structureMody, J. / Venkatachalam, A. / Ghosh, P. et al. | 2003
- 148
-
The impact of scaling on volume inversion in symmetric double-gate MOSFETsLin, C.-H. / He, J. / Xi, X. / Kam, H. / Niknejad, A.M. / Chan, M. / Hu, C. et al. | 2003
- 150
-
Dual-gate (FinFET) and tri-Gate MOSFETs: simulation and designBreed, A. / Roenker, K.P. et al. | 2003
- 152
-
The power of using automatic device optimization, based on iterative device simulations, in design of high-performance devicesBertilsson, K. / Nilsson, H.-E. et al. | 2003
- 154
-
Impact of metal gate work function on gate leakage of MOSFETsHou, Y.T. / Li, M.F. / Low, T. / Kwong, D.L. et al. | 2003
- 156
-
An analytical retention model for SONOS nonvolatile memory devices in the excess electron stateYu Wang, / White, M.H. et al. | 2003
- 158
-
Effect of insulated shallow extension for the improved short-channel effect of sub-100 nm MOSFETChun-Hsing Shih, / Yi-Min Chen, / Chenhsin Lien, et al. | 2003
- 162
-
Self-heating effects on strained Si/SiGe n-HFETsEncisco, M. / Aniel, F. / Giguerre, L. / Hackbarth, T. / Herzog, H. / Konig, U. / Hollander, B. / Mantl, S. et al. | 2003
- 164
-
A combined UHV-CVD and rapid thermal diffusion process for SiGe Esaki diodes by ultra shallow junction formationWernersson, L.-E. / Kabeer, S. / Zela, V. / Lind, E. / Zhao, J. / Yan, Y. / Seifert, W. / Seabaugh, A. et al. | 2003
- 166
-
Transit times of SiGe:C HBTs using non selective base epitaxy| 2003
- 168
-
BSIM3v3 parameter extraction and design of VCO using SiGe hetero-CMOSIslam, S.S. / Anwar, A.F.M. et al. | 2003
- 170
-
Electrical parameters in highly doped strained n-Si/sub 1-x/Ge/sub x/ epilayers grown on Si substratesTsamakis, D. / Sargentis, C. / Kuznetsov, A.Y. / Lampakis, D. et al. | 2003
- 172
-
Optimization of the cutoff frequency for Si/sub 1-x/Ge/sub x/ HBTsAi, L. / Cheng, M.-C. et al. | 2003
- 174
-
Heating in multi-emitter SiGe HBTsMcAlister, S.P. / McKinnon, W.R. / Kovacic, S. / Lafontaine, H. et al. | 2003
- 176
-
3-D simulation of strained Si/SiGe heterojunction FinFETsChang, S.T. / Hsu, B.-C. / Hwang, S.H. et al. | 2003
- 178
-
Analysis on the temperature dependent characteristics of SiGe HBTsLiang, C.-S. / Pei, Z. / Hsu, Y.-M. / Pan, T.-M. / Liu, Y.-H. / Liu, C.W. / Lu, S.C. / Hsieh, W.-Y. / Tsai, M.-J. et al. | 2003
- 182
-
Low-frequency noise characteristics of 0.13 /spl mu/m In/sub 0.65/GaAs p-HEMT under the influence of impact ionization induced hole currentTae-Woo Kim, / Dae-Hyun Kim, / In-Ho Kang, / Jeong-Hoon Kim, / Kwang-Seok Seo, / Jong-In Song, et al. | 2003
- 184
-
Asymmetrically recessed (ASR) 0.13/spl mu/m In/sub 0.65/GaAs HEMT's using double-deck shaped (DDS) gate technologyDae-Hyun Kim, / Seong-Jin Yeon, / Jae-Hak Lee, / Kwang-Seok Seo, et al. | 2003
- 186
-
Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTsWebster, R.T. / Anwar, A.F.M. et al. | 2003
- 188
-
Slow-wave characteristics of interconnects on silicon substratesMing-Hsiang Cho, / Guo-Wei Huang, / Kun-Ming Chen, / Hua-Chou Tseng, / Tsun-Lai Hsu, et al. | 2003
- 190
-
Temperature effects on the performance of 4-port transformersSheng-Chun Wang, / Guo-Wei Huang, / Shi-Dao Wu, / Kun-Ming Chen, / An-Sam Peng, / Ming-Hsiang Cho, / Hua-Chou Tseng, / Tsun-Lai Hsu, et al. | 2003
- 192
-
Simulation study of InP/GaAsSb double heterojunction bipolar transistorsBalaraman, P.A. / Roenker, K.P. et al. | 2003
- 194
-
Low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illuminationKruppa, W. / Boos, J.B. / Bennett, B.R. / Tinkham, B.P. et al. | 2003
- 196
-
Ultra high speed, very low power InSb-based quantum well FETs for logic applicationsAshley, T. / Barnes, A.R. / Datta, S. / Dean, A.B. / Emeny, M.T. / Fearn, M. / Hareland, S. / Haworth, L. / Hayes, D.G. / Hilton, K.P. et al. | 2003
- 198
-
Crossover from diffusive to ballistic transport as a function of frequency in a two dimensional electron gasKang, S. / Burke, P.J. / Pfeiffer, L.N. / West, K.W. et al. | 2003
- 200
-
Plasma wave electronics devicesRyzhii, V. / Shur, M.S. et al. | 2003
- 202
-
InAlAsSb/InGaSb double heterojunction bipolar transistorMagno, R. / Boos, J.B. / Campbell, P.M. / Bennett, B.R. / Glaser, E.R. / Ancona, M.G. / Tinkham, B.P. / Park, D. / Papanicolaou, N.A. / Ikossi, K. et al. | 2003
- 206
-
AC characterization of top-gated carbon nanotube field effect transistorsSingh, D.V. / Jenkins, K.A. / Appenzeller, J. / Wong, H.-S.P. et al. | 2003
- 208
-
Polyaniline/single-walled carbon nanotube composite electronic deviceRamamurthy, P.C. / Malshe, A.M. / Harrell, W.R. / Gregory, R.V. / McGuire, K. / Rao, A.M. et al. | 2003
- 210
-
Negative differential resistance in silicon-molecule heterostructure| 2003
- 212
-
Numerical modeling study of organic pentacene-based MOSFETsPrentice, D. / Roenker, K.P. et al. | 2003
- 214
-
Modeling of nonvolatile floating gate quantum dot memoryHasaneen, E.-S. / Heller, E. / Bansal, R. / Huang, W. / Jain, F. et al. | 2003
- 216
-
Study of ZnO nanocluster formation within styrene-acrylic acid and styrene-methacrylic acid diblock copolymers on Si and SiO/sub 2/ surfacesAli, H.A. / Iliadis, A.A. / Lee, U. et al. | 2003
- 218
-
Process and device characteristics of Pd nanocrystals MOS memorySargentis, C. / Giannakopoulos, K. / Travlos, A. / Tsamakis, D. et al. | 2003
- 220
-
A two-dimensional numerical simulation of a cylindrical resonant tunneling structure using a parallelized two-dimensional lattice Weyl-Wigner transport modelRecine, G. / Rosen, B. / Hong-Liang Cui, et al. | 2003
- 221
-
Growth properties of self-assembled InAs quantum dots on a thin tensile-strained layerJin Soo Kim, / Jin Hong Lee, / Sung Ui Hong, / Won Seok Han, / Ho-Sang Kwack, / Dae Kon Oh, et al. | 2003
- 223
-
Control of emission wavelength of InAs quantum dots grown by various growth techniquesSung Ui Hong, / Jin Soo Kim, / Jin Hong Lee, / Ho-Sang Kwack, / Won Seok Han, / Dae Kon Oh, et al. | 2003
- 225
-
Temperature variation of nonradiative electron transitions in GaInNAs/GaAs SQW investigated by a piezoelectric photothermal spectroscopyIkari, T. / Imai, K. / Fukushima, S. / Kondow, M. et al. | 2003
- 228
-
A novel SONOS nonvolatile flash memory device using hot hole injection for write and tunneling to/from gate for eraseWang, Y. / Zhao, Y. / Khan, B.M. / Doherty, C.L. / Krayer, J.D. / White, M.H. et al. | 2003
- 230
-
Modeling and simulation of high-bandwidth Si-based MOS/SOI photodetectorsLiang, C.-Y. / Hsu, B.-C. / Lin, C.-H. / Chang, S.T. / Liu, C.W. et al. | 2003
- 232
-
Analytical threshold voltage model for design and evaluation of tri-gate MOSFETsZeng, C. / Barlage, D.W. et al. | 2003
- 234
-
The simultaneous logic and IDDQ testing of CMOS ICs with mixed-mode testing facility for sequential circuitsReaz, M.B.I. / Yasin, F.M. / Sulaiman, M.S. / Ali, M.A.M. et al. | 2003
- 236
-
The field effect diodeTaghibakhsh, F. et al. | 2003
- 238
-
A new dual-material double-gate (DMDG) SOI MOSFET for nanoscale CMOS designReddy, G.V. / Kumar, M.J. et al. | 2003
- 240
-
Nonparabolicity and negative differential conductance in tunnelling from metal into 2D channelFeiginov, M. et al. | 2003
- 242
-
Suppression of DIBL of deep sub-micron FD SOI MOSFETs by source/drain engineeringNakajima, Y. / Hanajiri, T. / Toyabe, T. / Morikawa, T. / Sugano, T. et al. | 2003
- 246
-
Interfacial oxide thickness determination and interface studies of HfO/sub 2//SiO/sub 2//Si dielectricsLing Xie, / Yijie Zhao, / White, M.H. et al. | 2003
- 248
-
Structure, chemistry, and electrical performance of silicon oxide-nitride-oxide stacks on siliconLevin, I. / Kovler, M. / Leapman, R.D. / Yoder, D. / Fischer, D. / Roizin, Y. et al. | 2003
- 250
-
Characterizing damage to thin oxides induced during programming floating trap non-volatile semiconductor memory devicesWrazien, S.J. / Yu Wang, / Khan, B.M. / White, M.H. et al. | 2003
- 252
-
Ge pMOSFETs with MOCVD HfO/sub 2/ gate dielectricNan Wu, / Qingchun Zhang, / Chunxiang Zhu, / Li, M.F. / Chan, D.S.H. / Chin, A. / Kwong, D.L. / Bera, L.K. / Balasubramanian, N. / Du, A.Y. et al. | 2003
- 254
-
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectrics and metal gate electrodeShiyang Zhu, / Yu, H.Y. / Whang, S.J. / Chen, J.H. / Chen Shen, / Chunxiang Zhu, / Lee, S.J. / Li, M.F. / Chan, D.S.H. / Yoo, W.J. et al. | 2003
- 256
-
Germanium pMOSFET with HfON gate dielectricQingchun Zhang, / Nan Wu, / Chunxiang Zhu, / Li, M.F. / Chan, D.S.H. / Chin, A. / Kwong, D.L. / Bera, L.K. / Balasubramanian, N. / Du, A.Y. et al. | 2003
- 260
-
Breakdown of a simple scaling rule of SOI MOSFETs and its prolong by thinning BOXHanajiri, T. / Niizato, M. / Aoto, K. / Toyabe, T. / Nakajima, Y. / Morikawa, T. / Sugano, T. et al. | 2003
- 262
-
Beta engineering and circuit styles for SEU hardening SOI SRAM cellsIoannou, D.P. / Ioannou, D.E. et al. | 2003
- 264
-
Application of the EKV model to the DTMOS SOI transistorColinge, J.P. / Park, J.T. et al. | 2003
- 266
-
Circuit performance of double-gate SOI CMOSLin, C.-H. / Su, P. / Taur, Y. / Xi, X. / He, J. / Niknejad, A.M. / Chan, M. / Hu, C. et al. | 2003
- 268
-
A novel high current gain lateral PNP transistor on SOI for complementary bipolar technologyKumar, M.J. / Parihar, V. et al. | 2003
- 272
-
An approach to low-cost fabrication of lateral COOLMOS structuresShahrjerdi, D. / Hekmatshoar, B. / Khakifirooz, A. / Fathipour, M. et al. | 2003
- 274
-
Lateral diffusion of phosphorus ions by excimer laser annealing in the poly-Si film on silicon dioxide filmMin-Cheol Lee, / Min-Koo Han, et al. | 2003
- 278
-
Characterization of a MEMS biochip for planar patch-clamp recordingPandey, S. / Mehrotra, R. / Wykosky, S. / White, M.H. et al. | 2003
- 280
-
Design and fabrication of an InP-based moving waveguide 1/spl times/2 optical MEMS switchPruessner, M.W. / Kelly, D. / Datta, M. / Lim, H. / Maboudian, R. / Ghodssi, R. et al. | 2003
- 282
-
MEMS-tunable novel monolithic optical filters in InP with horizontal Bragg mirrorsDatta, M. / Pruessner, M.W. / Kelly, D.P. / Ghodssi, R. et al. | 2003
- 284
-
Rapid prototyping of 3D microstructures by direct scanning laser writingHui Yu, / Biao Li, / Xin Zhang, et al. | 2003
- 286
-
Exploration of magnetoelectric thin-film sensors using superlattice composition spreadsChang, K.-S. / Aronova, M.A. / Gao, C. / Lin, C.-L. / Simpers, J.H. / Murakami, M. / Takeuchi, I. et al. | 2003
- 287
-
Room temperature wafer bonding by elastomeric polymer-supported cold weldingZhang, W.Y. / Ferguson, G.S. / Tatic-Lucic, S. et al. | 2003
- 290
-
A new wideband modeling technique for spiral inductorsMIng Hsiang Chiou, / Hsu, K.Y.J. et al. | 2003
- 292
-
Frequency-dependent modeling of on-chip inductors on lossy substratesBai, Y. / Dilli, Z. / Goldsman, N. / Metze, G. et al. | 2003
- 294
-
Design and fabrication of Schottky diode, on-chip RF power detectorJeon, W. / Rodgers, J. / Melngailis, J. et al. | 2003
- 296
-
Noise mitigation in high-speed systems using electromagnetic high-impedance surfaceRamahi, O.M. / Shahparnia, S. / Mohajer-Iravani, B. / Kamgaing, T. et al. | 2003
- 300
-
Photonic bandgap based designs for nano-photonic integrated circuitsYablonovitch, E. et al. | 2003
- 301
-
A new spin on electronics - spintronicsWolf, S.A. et al. | 2003
- 302
-
Enhanced functionality in GaN and SiC devices by using novel processingPearton, S.J. / Abernathy, C.R. / Gila, B.P. / Ren, F. / Zavada, J.M. / Chu, S.N.G. et al. | 2003
- 304
-
Gallium-arsenide deep-level devices for 1.55 /spl mu/m fiber-opticsPan, J.L. / McManis, J.E. / Osadchy, T. / Grober, L. / Woodall, J.M. et al. | 2003
- 306
-
Drift dominated InP/GaP photodiodesSun, Y. / Yulius, A. / Li, G. / Woodall, J.M. et al. | 2003
- 308
-
Rapid modulation of GaAs luminesence intensity using lateral drift with selectable aperturesBoone, T.D. / Tsukamoto, H. / Woodall, J.M. et al. | 2003
- 310
-
Exploration of the epitaxial layer affecting behaviors of CMOS photodiodesWei-Jean Liu, / Chen, O.T.-C. / Li-Kuo Dai, / Ping-Kuo Weng, / Far-Wen Jih, et al. | 2003
- 314
-
Carbon nanotube devices for GHz to THz applicationsBurke, P.J. et al. | 2003
- 316
-
Terahertz sources and detectors based on nonlinear diodesCrowe, T.W. et al. | 2003
- 318
-
Tunable CW-THz system with a log-periodic photoconductive emitterMendis, R. / Sydlo, C. / Sigmund, J. / Feiginov, M. / Meissner, P. / Hartnagel, H.L. et al. | 2003
- 322
-
Characterization of charge trapping in SiO/sub 2//HfO/sub 2/ dielectricsDegraeve, R. / Kerber, A. / Cartier, E. / Pantisano, L. / Groeseneken, G. et al. | 2003
- 324
-
Effect of polySi/high-/spl kappa/ interface on device reliabilityWang, X.W. / Bu, H.M. / Ma, T.P. / Tseng, H. / Tobin, P. et al. | 2003
- 326
-
Electrical characterization of dielectrics (oxide, nitride, oxy-nitride) for use in MIM capacitors for mixed signal applicationsPrasad, J. / Anser, M. / Thomason, M. et al. | 2003
- 328
-
Investigation of PVD HfO/sub 2/MIM capacitors for Si RF and mixed signal ICs applicationHang Hu, / Shi-Jin Ding, / Chunxiang Zhu, / Rustagi, S.C. / Lu, Y. / Li, M.F. / Byung Jin Cho, / Chan, D.S.H. / Yu, M.B. / Chin, A. et al. | 2003
- 332
-
Heteroepitaxial growth of GaN, AlN, and AlGaN layers on SiC substrates by HVPEMelnik, Y. / Kovalenkov, O. / Soukhoveev, V. / Ivantsov, V. / Shapovalova, Y. / Usikov, A. / Dmitriev, V. et al. | 2003
- 334
-
Development of ohmic contact materials for wide gap p-type 4H-SiCTsukimoto, S. / Nakatsuka, O. / Moriyama, M. / Murakami, M. et al. | 2003
- 336
-
High temperature Hall effect measurements of semi-insulating 4H-SiC substratesMitchel, W.C. / Mitchell, W.D. / Zvanut, M.E. et al. | 2003
- 338
-
Mobility of (112~0) and (0001) orientated 4H-SiC quantized inversion layersPennington, G. / Goldsman, N. / McGarrity, J.M. / Lelis, A. / Scozzie, C.J. et al. | 2003
- 340
-
Wannier-Stark localization in 6H-SiC JFETsSankin, V.I. / Shkrebiy, P.P. / Lebedev, A.A. et al. | 2003
- 344
-
High-speed 6.1 Angstrom InAs HBT devices and circuitsThomas, S. / Elliott, K. / Chow, D.H. / Rajavel, R. / Deelman, P. / McLaughlin, D. / Boegeman, Y. / Fields, C.H. et al. | 2003
- 346
-
Advanced substrate/buffer layer polishing techniques to optimize the growth and performance of 6.1Angstrom InAs HBTsGoorsky, M.S. / Noori, A.M. / Sandhu, R.S. / Hayashim, S.L. / Mescrole, E.D. / Lange, M. / Cavus, A. / Monier, C. / Hsing, R. / Sawdai, D. et al. | 2003
- 348
-
InP heterojunction bipolar transistor with a selectively implanted collector pedestalYingda Dong, / Yun Wei, / Griffith, Z. / Urteaga, M. / Dahlstrom, M. / Rodwell, M.J.W. et al. | 2003
- 350
-
Low leakage and high speed InP/In/sub 0.53/Ga/sub 0.47/As/InP metamorphic double heterojunction bipolar transistors in GaAs substratesKim, Y.M. / Griffith, Z. / Rodwell, M.J.W. / Gossard, A.C. et al. | 2003
- 352
-
6.2 /spl Aring/ In/sub 0.2/Al/sub 0.8/Sb/InAs/sub 0.7/Sb/sub 0.3/ HEMTs for low voltage high-frequency applicationsPapanicolaou, N.A. / Tinkham, B.P. / Boos, J.B. / Bennett, B.R. / Bass, R. / Park, D. et al. | 2003
- 354
-
The evolution of silicon-on-insulator MOSFETsColinge, J.-P. et al. | 2003
- 356
-
Scaling and reliability of deeply scaled SOI CMOSIoannou, D.E. et al. | 2003
- 357
-
Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectricsZhao, E. / Salman, A. / Zhang, J. / Subba, N. / Chan, J. / Marathe, A. / Beebe, S. / Taylor, K. et al. | 2003
- 359
-
Time-resolved measurements of self-heating in SOI and strained-Si MOSFETs using off-state leakage current luminescencePolonsky, S. / Jenkins, K.A. et al. | 2003
- 361
-
Experimental study on the mobility universality in ultra thin body SOI pMOSFETsTsutsui, G. / Saitoh, M. / Nagumo, T. / Hiramoto, T. et al. | 2003
- 364
-
Latest advances in high voltage, drift free 4H-SiC p-i-n diodesDas, M.K. / Sumakeris, J.J. / Krishnaswami, S. / Paisley, M.J. / Agarwal, A.K. / Powell, A. et al. | 2003
- 366
-
An analytical model of SiC MESFETs incorporating trapping and thermal effectsMukherjee, S.S. / Islam, S.S. / Bowman, R.J. et al. | 2003
- 368
-
Reliability concerns in contemporary SiC power devicesSingh, R. / Hefner, A.R. / McNutt, T.R. et al. | 2003
- 370
-
Calculation of lattice heating in 4H-SiC RF power devices, based on 2D electrical and 3D thermal simulationsBertilsson, K. / Harris, C. / Nilsson, H.-E. et al. | 2003
- 372
-
Recent results in InGaP Schottky diodes and GaP FETsChen, A. / Woodall, J.M. et al. | 2003
- 376
-
A novel interband-resonant-tunneling-diode(I-RTD) based high-frequency oscillatorWoolard, D. / Weidong Zhang, / Gelmont, B. et al. | 2003
- 378
-
Fundamentals of high-field electron transport in nitride semiconductors for terahertz applicationsKim, K.W. / Sokolov, V.N. / Kochelap, V.A. / Korotyeyev, V.V. / Woolard, D.L. et al. | 2003
- 380
-
A system-level analysis of Schottky diodes for incoherent THz imaging arraysBrown, E.R. et al. | 2003
- 382
-
Terahertz emission using quantum dots and microcavitiesSolomon, G.S. et al. | 2003
- 386
-
A CMOS compatible low power ultra dense capacitor less SOI RAMFazan, P. / Okhonin, S. / Nagoga, M. et al. | 2003
- 388
-
Low-power device design of fully-depleted SOI MOSFETsHiramoto, T. / Nagumo, T. / Ohtou, T. et al. | 2003
- 390
-
DG-SOI ratioed logic with symmetric DG load - a novel approach for sub 50 nm LV/LP circuit designMitra, S. / Salman, A. / Ioannou, D.P. / Tretz, C. / Ioannou, D.E. et al. | 2003
- 392
-
Heat flow in SOI current mirrorsFeixia Yu, / Cheng, M.-C. et al. | 2003
- 394
-
Simulation study of RF linearity in 50 nm DG and SOI MOSFETsKaya, S. / Ma, W. et al. | 2003
- 398
-
Insulated gate III-N devices and ICsSimin, G. / Adivarahan, V. / Fatima, H. / Saygi, S. / Koudymov, A. / He, X. / Shuai, W. / Rai, S. / Yang, J. / Asif Khan, M. et al. | 2003
- 400
-
Contacts to group III nitride semiconductor alloysMohney, S.E. / Hull, B.A. / Wang, J.H. et al. | 2003
- 402
-
Migration enhanced metal organic chemical vapor deposition of AlN/GaN/InN-based heterostructuresFareed, Q. / Gaska, R. / Shur, M.S. et al. | 2003
- 404
-
Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contactsBradley, S.T. / Brillson, L.J. / Hwang, J. / Schaff, W.J. et al. | 2003
- 406
-
Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidationWu, H.-M. / Lin, J.-Y. / Peng, L.-H. / Lee, C.-M. / Chyi, J.-I. / Chen, E. et al. | 2003
- 410
-
Electronic transport in carbon nanotube field-effect transistorsAppenzeller, J. et al. | 2003
- 412
-
Electron mobility of a semiconducting carbon nanotubePennington, G. / Akturk, A. / Goldsman, N. et al. | 2003
- 414
-
Carbon nanotube networks: applications on flexible substratesNovak, J.P. / Perkins, F.K. / Snow, E.S. et al. | 2003
- 415
-
The analysis, design, and simulation of molecular electronic devices using ab initio based methods: the negative differential resistanceSeminario, J.M. / Araujo, R. / Liuming Yan, / Yufei Ma, et al. | 2003
- 417
-
Molecular devices formed by direct monolayer attachment to siliconRichter, C.A. / Hacker, C.A. / Richter, L.J. et al. | 2003
- 420
-
Suppression of the reverse short channel effect in sub-micron CMOS devicesThomason, M. / Prasad, J. / De Greve, J. et al. | 2003
- 422
-
Chlorine-hydrogen ECR etching of InGaAsP/InPWelty, R.J. / Reinhardt, C.E. / Han, I.Y. / Du, Y. / Yoo, S.J. et al. | 2003
- 424
-
A novel polysilicon gate engineering by laser thermal process for high performance sub-40 nm CMOS devicesYamamoto, T. / Okabe, K. / Kubo, T. / Goto, K. / Morioka, H. / Wang, Y. / Lin, T. / Talwar, S. / Kase, M. / Sugii, T. et al. | 2003
- 426
-
Maskless fabrication of JFETs via focused ion beamsDe Marco, A.J. / Melngailis, J. et al. | 2003
- 428
-
Optimizing pattern fill for planarity and parasitic capacitanceNelson, M. / Williams, B. / Belisle, C. / Aytes, S. / Beasterfield, D. / Liu, J. / Donaldson, S. / Prasad, J. et al. | 2003
- 430
-
An improved shift-and-ratio Leff extraction method for MOS transistors with halo/pocket implantsFathi, E. / Afzal, B. / Fathipour, M. / Khakifirooz, A. et al. | 2003
- 430
-
An improved shift-and-ratio L/sub eff/ extraction method for MOS transistors with halo/pocket implantsFathi, E. / Afzal, B. / Fathipour, M. / Khakifirooz, A. et al. | 2003
- 434
-
High performance AlGaN/GaN HEMTs with a field plated gate structureChini, A. / Buttari, D. / Coffie, R. / Shen, L. / Heikman, S. / Chakraborty, A. / Keller, S. / Mishra, U.K. et al. | 2003
- 436
-
High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted molecular beam epitaxyManfra, M.J. et al. | 2003
- 437
-
Influence of layer structure and surface passivation on performance of AlGaN/GaN HEMTs on Si and SiC substratesBernat, J. / Javorka, P. / Wolter, M. / Fox, A. / Marso, M. / Kordos, P. et al. | 2003
- 439
-
Effects of gate recess depth on pulsed I-V characteristics of AlGaN/GaN HFETsConway, A. / Li, J. / Asbeck, P. et al. | 2003
- 441
-
Barrier thickness and mole fraction dependence of power performance of undoped supply layer-AlGaN/GaN HFETsIslam, S.S. / Rahman, M.N. / Anwar, A.F.M. et al. | 2003
- 444
-
Fundamental electronic properties of metal-organic contacts and organic-organic heterojunctionsKahn, A. et al. | 2003
- 446
-
Metal-molecule-semiconductor heterostructures for nanoelectronic applicationsLodha, S. / Janes, D.B. et al. | 2003
- 448
-
Silicon nano-devices and single-electron devicesTakahashi, Y. / Ono, Y. / Fujiwara, A. / Nishiguchi, K. / Inokawa, H. et al. | 2003
- 450
-
Comparing options for "ultimate" scale SOI MOSFETsWalls, T.J. / Sverdlov, V.A. / Likharev, K.K. et al. | 2003
- 452
-
Nanoscale FinFETs for low power applicationsRosner, W. / Landgraf, E. / Kretz, J. / Dreeskornfeld, L. / Schafer, H. / Stadele, M. / Schulz, T. / Hofmann, F. / Luyken, R.J. / Specht, M. et al. | 2003
- 456
-
Microwave heating for advanced semiconductor processingBooske, J.H. et al. | 2003
- 458
-
Specular X-ray reflectivity and small angle X-ray scattering study of ultra-low dielectric constant methylsilesquioxane filmsGoh, T.K. / Wu, S. / Wong, T.K.S. et al. | 2003
- 460
-
Proton irradiation damages in CuInSe/sub 2/ thin film solar cell materials by a piezoelectric photothermal spectroscopyAkaki, Y. / Ohryoji, N. / Yoshino, K. / Kawakita, S. / Imaizumi, M. / Niki, S. / Sakurai, K. / Ishizuka, S. / Ohshima, T. / Ikari, T. et al. | 2003
- 462
-
Screening in Si-H bonds during plasma processingSrinivasan, P. / Vootukuru, B. / Misra, D. et al. | 2003
- 464
-
A novel self-aligned gate-lost MOSFET process comparing high-/spl kappa/ candidatesChi On Chui, / Kim, H. / McVittie, J.P. / Triplett, B.B. / McIntyre, P.C. / Saraswat, K.C. et al. | 2003
- 468
-
Modeling of direct tunneling current through interfacial SiO/sub 2/ and high-K gate stacksZhao, Y. / White, M.H. et al. | 2003
- 470
-
An analytical model of short-channel effect for sub-100 nm MOSFET with graded junction and halo doped channelChun-Hsing Shih, / Chenhsin Lien, et al. | 2003
- 472
-
Compact models for silicon carbide power devicesMcNutt, T. / Hefner, A. / Mantooth, A. / Berning, D. / Ranbir Singh, et al. | 2003
- 474
-
A modeling of the optical properties of the zinc oxide-zinc magnesium oxide double barrier systemKrokidis, G. / Xanthakis, J.P. / Iliadis, A.A. et al. | 2003
- 476
-
Analytical expression of body factor in short channel bulk MOSFETsKumar, A. / Nagumo, T. / Tsutsui, G. / Hiramoto, T. et al. | 2003
- 478
-
Impact of asymmetric metal coverage on high performance MOSFET mismatchFukumoto, J. / Burleson, J. / Das, T. / Moon, J.E. / Mukund, P.R. et al. | 2003
- 482
-
Prospects of III-V quantum LSIs based on hexagonal BDD approachKasai, S. / Sato, T. / Hasegawa, H. et al. | 2003
- 484
-
A numerical study of vertical transport in arbitrary quantum well structuresRecine, G. / Rosen, B. / Hong-Liang Cui, et al. | 2003
- 485
-
Single-electron turnstile using Si-wire charge-coupled devicesFujiwara, A. / Zimmerman, N.M. / Ono, Y. / Takahashi, Y. et al. | 2003
- 487
-
Resonant Tunneling Permeable Base Transistor for RF applicationsLind, E. / Lindstrom, P. / Wernersson, L.-E. et al. | 2003
- 489
-
Excellent 2-bit silicon-oxide-nitride-oxide-silicon(SONOS) memory (TSM) with a 90-nm merged-triple gateYong Kyu Lee, / Jae Sung Sim, / Suk Kang Sung, / Tae Hoon Kim, / Jong Duk Lee, / Byung-Gook Park, / Sung Taeg Kang, / Chilhee Chung, / Donggun Park, / Kim, K. et al. | 2003
- 491
-
MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responsesHsu, B.-C. / Chang, S.T. / Kuo, P.-S. / Chen, P.S. / Liu, C.W. / Lu, J.-H. / Kuan, C.H. et al. | 2003
- 494
-
A micromachined preconcentrator for enhanced trace detection of illicit materialsMcGill, R.A. / Martin, M. / Ross, S. / Stepnowski, J. / Stepnowski, S. / Houser, E. / Mott, D. / Walsh, K. / Crain, M. / Nguyen, V. et al. | 2003
- 495
-
Multi-functional biochip for biological agent detectionTuan Vo-Dinh, / Griffin, G.D. / Wintenberg, A.L. / Stokes, D.L. / Stratis, D. / Mobley, J. / Maples, R. et al. | 2003
- 496
-
Suspended waveguides for InP optical MEMSKelly, D. / Pruessner, M.W. / Datta, M. / Ghodssi, R. et al. | 2003
- 498
-
Photoacoustic chemical sensing on a MEMS-based platformPellegrino, P.M. / Polcawich, R.G. / Firebaugh, S.L. et al. | 2003
- 500
-
MEMS-based embedded sensor virtual components for SoCAfridi, M. / Hefner, A. / Berning, D. / Ellenwood, C. / Varma, A. / Jacob, B. / Semancik, S. et al. | 2003
- 504
-
Closure relations for macroscopic transport modelsGrasser, T. et al. | 2003
- 506
-
Time-domain tools for the investigation of gain-quenched laser logicBond, T.C. / Kallman, J.S. et al. | 2003
- 508
-
Mixed-mode simulation of non-isothermal quantum device operation and full-chip heatingAkturk, A. / Parker, L. / Goldsman, N. / Metze, G. et al. | 2003
- 510
-
Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixingTait, G.B. / Ameen, D.B. et al. | 2003
- 512
-
Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green's functionsFonseca, J. / Kaya, S. et al. | 2003
- 516
-
A concept of semiconductor optical routing device utilizing minority carrier driftTsukamoto, H. / Boone, T.D. / Woodall, J.M. et al. | 2003
- 518
-
A low-cost Horizontal Current Bipolar Transistor (HCBT) technology for the BiCMOS integration with FinFETsSuligoj, T. / Haitao Liu, / Sin, J.K.O. / Tsui, K. / Chen, K.J. / Biljanovic, P. / Wang, K.L. et al. | 2003
- 520
-
Si doped p- and n-type Al/sub x/ Ga/sub 1-x/As epilayers for high density lateral-junction LED arrays on (311)A patterned substrateSaravanan, S. / Dharmarasu, N. / Vaccaro, P.O. / Ocampo, J.M.Z. / Kubota, K. / Saito, N. et al. | 2003
- 522
-
Silicon MOSFET-based field induced band-to-band tunneling effect transistor - "FIBTET"Kyung Rok Kim, / Gwang-Hyun Baek, / Ki-Whan Song, / Hyun Ho Kim, / Jung-Im Huh, / Jong Duk Lee, / Byung-Gook Park, et al. | 2003
- 524
-
Improved quantization of 2DEG of p-HEMTGudimetta, S. / Mil'shtein, S. et al. | 2003
- 528
-
Negative-refractive-index metamaterials using loaded transmission lines and enabling RF devicesEleftheriades, G.V. et al. | 2003
- 530
-
Study of the effects of microwave interference on MOSFET devices in CMOS integrated circuitsKim, K. / Iliadis, A.A. / Granatstein, V. et al. | 2003
- 532
-
Modeling RF effects in integrated circuits with a new 3D alternating-direction-implicit Maxwell equation solverXi Shao, / Goldsman, N. / Ramahi, O. / Guzdar, P.N. et al. | 2003
- 534
-
Measured RF induced non-linear effects in digital electronicsFirestone, T.M. / Rodgers, J.C. / Granatstein, V.L. et al. | 2003
- 536
-
An impedance transformer with silicon RF MEMS switchesNithianandam, J. et al. | 2003
- 538
-
Author index| 2003
-
2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)| 2003