Surface control structures for high-performance AlGaN/GaN HEMTs (Englisch)
- Neue Suche nach: Hashizume, Tamotsu
- Neue Suche nach: Hashizume, Tamotsu
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Surface control structures for high-performance AlGaN/GaN HEMTs
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Beteiligte:Hashizume, Tamotsu ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.10.2008
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Format / Umfang:5119036 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
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Surface control structures for high-performance AlGaN/GaN HEMTsHashizume, Tamotsu et al. | 2008
- 23
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Quantum-Corrected Simulation of Complementary Nanowire Tunneling Transistors of 5 nm Gate-LengthHeigl, Alexander / Wachutka, Gerhard et al. | 2008
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Electrical behaviour of Au/InGaAsSb and Au/GaSb junctionsHorvath, Zs. J. / Rakovics, V. / Podor, B. et al. | 2008
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Low equivalent oxide thickness metal/insulator/metal structures for DRAM applicationHudec, B. / Tapajna, M. / Husekova, K. / Aarik, J. / Aidla, A. / Frohlich, K. et al. | 2008
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Hydrogenated Amorphous Carbon Films Prepared by Plasma-enhanced Chemical Vapor DepositionHuran, J. / Kobzev, A.P. / Balalykin, N.I. / Pezoltd, J. et al. | 2008
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Pentacene OTFT with parylene gate dielectricJakabovic, Jan / Kovac, Jaroslav / Srnanek, Rudolf / Sokolsky, Michal / Hasko, Daniel et al. | 2008
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Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion techniqueKindl, D. / Hubik, P. / Mares, J. J. / Kristofik, J. et al. | 2008
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Destruction in the Active Part of an IGBT Chip Caused by Avalanche-Breakdown at the Edge Termination StructureKnipper, U. / Pfirsch, F. / Raker, T. / Niedermeyr, J. / Wachutka, G. et al. | 2008
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Wet thermal oxidation for GaAs, GaN and Metal/GaN device applicationsKorbutowicz, Ryszard / Prazmowska, Joanna / Wagrowski, Zbigniew / Szyszka, Adam / Tlaczala, Marek et al. | 2008
- 167
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Detection of BreathingKroutil, Jiri / Husak, Miroslav et al. | 2008
- 171
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Design of the State Machine for A/D ConverterKubar, Miloslav / Jakovenko, Jiri et al. | 2008
- 175
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Design and Fabrication of High-Temperature SOI Strain-GaugesKulha, P. / Boura, A. / Husak, M. / Mikulik, P. / Kucera, M. / Valenda, S. et al. | 2008
- 179
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The investigation of semi-insulating GaAs detectors properties after neutron irradiationLadziansky, M. / Sagaitova, A. / Necas, V. et al. | 2008
- 183
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Investigation of Ti/Al ohmic contact to N-type 6H-SiCMachac, P. / Barda, B. et al. | 2008
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Ruthenium based Schottky contacts on n-type GaNMacherzynski, W. / Szyszka, A. / Paszkiewicz, B. / Paszkiewicz, R. / Tlaczala, Marek et al. | 2008
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Modelling and Characterisation of Fractal Based RF Inductors on Silicon SubstrateMaric, A. / Radosavljevic, G. / Zivanov, M. / Zivanov, Lj. / Stojanovic, G. / Mayer, M. / Jachimowicz, A. / Keplinger, F. et al. | 2008
- 195
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Sub-micrometer Hall probes prepared by tip-inducted local anodic oxidationMartaus, J. / Cambel, V. / Gregusova, D. / Kudela, R. et al. | 2008
- 199
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New progressive method suitable for the exposure optimization of large and complex defect-free chips direct written by ZBA 21 e-beam toolMatay, Ladislav / Andok, Robert / Barak, Vladislav / Konecnikova, Anna / Kostic, Ivan / Partel, Stefan / Hudek, Peter et al. | 2008
- 203
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The disposable Dot Field Effect Transistor: Process flow and overlay requirementsMoers, J. / Gerharz, J. / Trellenkamp, St. / Hart, A.v.d. / Mussler, G. / Gruitzmacher, D. et al. | 2008
- 207
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2-D Physical Modelling of 6-doped GaAs/AlGaAs HEMTMohiuddin, M. / Arshad, S. / Bouloukou, A. / Missous, M. et al. | 2008
- 211
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PDMS-Glass bonded Lab-on-a-chip device for Single Cell AnalysisMokkapati, V.R.S.S. / Piciu, Oana.M. / Zhang, L. / Mollinger, J. / Bastemeijer, J. / Bossche, A. et al. | 2008
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Some remarks to the nanowires grown on Ill-V substrateNemcsics, Akos / Horvath, Eniko / Nagy, Szilvia / Molnar, Laszlo Milan / Mojzes, Imre / Horvath, Zsolt J. et al. | 2008
- 219
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InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layerNovak, J. / Elias, P. / Soltys, J. / Hasenohrl, S. / Vaivra, I. et al. | 2008
- 223
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Analysis and Measurement of Capacitive Coupling in Integrated CircuitsNovak, J. / Foit, J. / Janicek, V. et al. | 2008
- 227
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3-D silicon carbide surface micromachined accelerometer compatible with CMOS processingPakula, L.S. / Yang, H. / French, P.J. et al. | 2008
- 231
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Edge-emitting laser diode with GaAs triple QW in active region investigated by NOBICPudis, D. / Suslik, L. / Martincek, I. / Kovac, J. / Gottschalch, V. et al. | 2008
- 235
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GHz Class Low-Power Flash ADC for Broadband CommunicationsSexton, J. / Tauqeer, T. / Mohiuddin, M. / Missous, M. et al. | 2008
- 239
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A new generation of cryogenic silicon diode temperature sensorsShwarts, Yu. M. / Shwarts, M. M. / Sapon, S. V. et al. | 2008
- 243
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Influence of Eu, Tb, Pd dopants on electrical and optical properties of nanostructured TiO2 thin filmsSieradzka, Karolina / Domaradzki, Jaroslaw / Kaczmarek, Danuta et al. | 2008
- 247
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Reliability issues of AlGaN/GaN heterostructures field-effect transistorsSkriniarova, J. / Florovic, M. / Kovac, J. / Donoval, D. / Kordos, P. et al. | 2008
- 251
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Hole transport in the p-type RTDSoban, Z. / Voves, J. / Cukr, M. / Novak, V. et al. | 2008
- 255
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Characterisation of organic field effect transistor structures by micro-Raman spectroscopy, AFM and XRD methodsSmanek, Rudolf / Kovac, Jaroslav / Jakabovic, Jan / Irmer, Gert / Dobrocka, Edmund / Hasko, Daniel et al. | 2008
- 259
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Purification Action of Rare-Earth Elements in the LPE Growth of III-V Semiconductors: Feedback PhenomenaSrobar, F. / Prochaizkova, Olga et al. | 2008
- 263
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Influence of annealing on electrical properties of AlGaN/GaN HFETs and MOSHFETs using A12O3Stoklas, R. / Gregusova, D. / Novak, J. / Kordos, P. et al. | 2008
- 267
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Electrical characterization of Ru-and RuO2/Ta2O5 gate stacks for nanoscale DRAM technologyTapajna, M. / Dobrocka, E. / Paskaleva, A. / Husekova, K. / Atanassova, E. / Frohlich, K. et al. | 2008
- 271
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Two-Dimensional Physical and Numerical Modelling of InP-based Heterojunction Bipolar TransistorsTauqeer, T. / Sexton, J. / Amir, F. / Missous, M. et al. | 2008
- 275
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Preparation of transparent conductive AZO thin films for solar cellsTvarozek, Vladimir / Sutta, Pavel / Novotny, Ivan / Ballo, Peter / Harmatha, Ladislav / Flickyngerova, Sona / Prusakova, Lucie / Netrvalova, Marie / Vavrunkova, Veronika / Pullmannova, Andrea et al. | 2008
- 279
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Electro-Optical Monitoring of Human Cognitive ProcessesVavrinsky, Erik / Stopjakova, Viera / Brezina, Igor / Tvarozek, Vladimir / Majer, Libor / Solarikova, Petra et al. | 2008
- 283
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Photoelectrical properties of TOS thin films based on TiO2 prepared by modified magnetron sputteringWojcieszak, D. / Domaradzki, J. / Kaczmarek, D. / Adamiak, B. et al. | 2008
- 287
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Role of Spacer Thickness on Magnetoresistance Characteristics under Mechanical strainAnwarzai, Branislav / Ac, Vladimir / Luby, Stefan / Majkova, Eva / Senderak, Rudolf et al. | 2008
- 291
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PECVD Silicon Carbon Nitrid Thin Films: PropertiesBohacek, P. / Huran, J. / Kobzev, A.P. / Balalykin, N.I. / Pezoltd, J. et al. | 2008
- 295
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Study of bulk semi-insulating GaAs radiation detectors: Role of ohmic contact metallization in electrical charge transport and detection performanceDubecky, F. / Zat'ko, B. / Hubik, P. / Bohacek, P. / Gombia, E. / Chromik, S. et al. | 2008
- 299
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Registration of fast neutrons emissions from hot plasmas by bulk semi-insulating GaAs detectorsDubecky, F. / Ryc, L. / Kaczmarczyk, J. / Scholz, M. / Zat'ko, B. / Bohacek, P. / Huran, J. / Ladziansky, M. et al. | 2008
- 303
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Localised etching of (100) GaAs via an AlAs sacrificial layerElias, P. / Kostic, I. / Kudela, R. / Novak, J. et al. | 2008
- 307
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Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applicationsFerrari, C. / Bosi, M. / Attolini, G. / Frigeri, C. / Gombia, E. / Pelosi, C. / Arumainathan, S. / Musayeva, N. et al. | 2008
- 311
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Surface Acoustic Wave Excitation on SF6 Plasma Treated AlGaN/GaN HeterostructureLalinsky, T. / Rufer, L. / Vanko, G. / Ryger, I. / Hascik, S. / Tomaska, M. / Mozolova, Z. / Vincze, A. et al. | 2008
- 315
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Analysis of Novel MagFET Structures for Built-in Current Sensors Supported by 3D Modeling and SimulationMarek, Juraj / Donoval, Daniel / Donoval, Martin / Daricek, Martin et al. | 2008
- 319
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Simulation of Influence of AlGaN/GaN Heterojunction Parameters on Its Capacitance CurvesOsvald, J. et al. | 2008
- 323
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Preparation and properties of micro-hotplates for gas sensors based on GaAsTengeri, D. / Pullmannova, A. / Hotovy, I. / Rehacek, V. / Hascik, S. / Lalinsky, T. et al. | 2008
- 327
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DRIE and Bonding Assisted Low Cost MEMS Processing of In-plane HAR Inertial SensorsRajaraman, V. / Makinwa, K.A.A. / French, P.J. et al. | 2008
- 331
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High Frequency Characterization and Properties of AlGaN/GaN HEMT StructuresTomaska, M. / Lalinsky, T. / Vanko, G. / Misun, M. et al. | 2008
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Impact of SF6 Plasma on DC and Microwave Performance of AIGaN/GaN HEMT StructuresVanko, G. / Lalinsky, T. / Tomaska, M. / Hascik, S. / Mozolova, Z. / Skriniarova, J. / Kostic, I. / Vincze, A. / Uherek, F. et al. | 2008
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Preliminary tests of semi-insulating GaAs radiation detectors coupled to the multichannel ASIC DX64 readout chipZat'ko, B. / Dubecky, F. / Scepko, P. / Grybos, P. / Mudron, J. et al. | 2008
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Author index| 2008
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Covers| 2008
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The Seventh International Conference on Advanced Semiconductor Devices and Microsystems| 2008
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advert| 2008
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International Programme Committee| 2008
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Contents| 2008
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Preface| 2008