Stability improvement of Therma-Wave signal by pre-annealing (Englisch)
- Neue Suche nach: Harada, M.
- Neue Suche nach: Sano, M.
- Neue Suche nach: Izutani, H.
- Neue Suche nach: Harada, M.
- Neue Suche nach: Sano, M.
- Neue Suche nach: Izutani, H.
In:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
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252-255
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2002
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ISBN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Stability improvement of Therma-Wave signal by pre-annealing
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Beteiligte:
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.01.2002
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Format / Umfang:265509 byte
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 0_1
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Ion Implantation Technology| 2002
- 1
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Doping challenges in exploratory devices for high performance logicJones, E.C. et al. | 2002
- 1
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The distribution of boron and arsenic in SOI wafers implementing SIMSMulcahy, C. / Biswas, S. / Kelly, I. / Kirkwood, D. / Collart, E. et al. | 2002
- 7
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Source/drain engineering for sub 100-nm technology nodeOhuchi, K. / Adachi, K. / Hokazono, A. / Toyoshima, Y. et al. | 2002
- 13
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Optimization of high tilt pocket implant process for improving deep sub-micro PMOS device sensitivityYeh, K.S.Y. / Chiang, M.C. / Tsai, C.J. / Wang, Y.L. / Wang, J.K. et al. | 2002
- 17
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Process control issues for retrograde well implants for narrow n+/p+ isolation in CMOSRubin, L.M. / Morris, W. / Jasper, C. et al. | 2002
- 21
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Optimizing p-type ultra-shallow junctions for the 65 nm CMOS technology nodePawlak, B. / Lindsay, R. / Surdeanu, R. / Stolk, P. / Maex, K. / Pages, X. et al. | 2002
- 25
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Boron retarded diffusion in the presence of indium or germaniumHong-Jyh Li, Hong-Jyh Li / Kirichenko, T.A. / Kohli, P. / Banerjee, S.K. / Graetz, E. / Tichy, R. / Zeitzoff, P. et al. | 2002
- 29
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Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channelsSuvkhanov, A. / Mirabedini, M. / Hornback, V. et al. | 2002
- 29
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Investigation of Indium Activation by SRP and SIMS for sub-0.1 mum Retrograde ChannelsSuvkhanov, A. / Mirabedini, M. / Hornback, V. / Nitodas, S. F. / Kalnas, C. E. / Ye, C. W. / IEEE et al. | 2002
- 33
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Implanted-ion dose variation from Si surface status of sub-nm scale on 90 nm ULSI processKase, M. / Kubo, T. / Watanabe, K. / Okabe, K. / Nakao, H. et al. | 2002
- 36
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Fabrication of 60-nm plasma doped CMOS transistorsLenoble, D. / Grouillet, A. / Boeuf, F. / Skotnicki, T. / Hacker, D. / Scheuer, J. / Walther, S. et al. | 2002
- 40
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Impact of energy contamination of ultra-low energy implants on sub-0.1-μm CMOS device performanceLenoble, D. / Prod'homme, P. / Beutier, D. / Julien, C. et al. | 2002
- 40
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Impact of Energy Contamination of Ultra-Low Energy Implants on Sub-0.1 mum CMOS Device PerformanceLenoble, D. / Prod homme, P. / Beutier, D. / Julien, C. / IEEE et al. | 2002
- 44
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Impact of tilt angle variation on device performanceLenoble, D. / Wacquant, F. / Josse, E. / Arnaud, F. et al. | 2002
- 48
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Ultra-shallow junction formation by Point Defect EngineeringWei-Kan Chu, Wei-Kan Chu / Lin Shao, Lin Shao / Liu, J. / Thompson, P.E. / Wang, X. / Chen, H. et al. | 2002
- 52
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Optimized BF3 P2 LAD implantation with Si-PAI for shallow, abrupt and high quality p+/n junctions formed using low temperature SPE annealingFelch, S. / Borland, J. / Ziwie Fang, Ziwie Fang / Bon-Woong Koo, Bon-Woong Koo / Gossmann, H. / Jones, K. / Lindfors, C. et al. | 2002
- 56
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The use of laser annealing to reduce parasitic series resistances in MOS devicesTakamura, Y. / Eun-Ha Kim, Eun-Ha Kim / Jain, S.H. / Griffin, P.B. / Plummer, J.D. et al. | 2002
- 60
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Electrical isolation of n-GaAs by proton implantation - effects of doping implant, isolation implant and implant temperatureAhmed, S. / Sealy, B.J. / Gwilliam, R. et al. | 2002
- 64
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Effects of beam incident angle control on NMOS source/drain extension applicationsUkyo Jeong, Ukyo Jeong / Mehta, S. / Campbell, C. / Lindberg, R. / Zhiyong Zhao, Zhiyong Zhao / Cusson, B. / Buller, J. et al. | 2002
- 69
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An enhanced 100nm CMOS logic technology with germanium preamorphized PMOSChan, S.T.H. / Benistant, F. / Al-Bayati, A. et al. | 2002
- 69
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An Enhancement of 100 nm CMOS Logic Technology with Germanium Preamorphized PMOSChan, S. T. H. / Benistant, F. / Al-Bayati, A. / IEEE et al. | 2002
- 72
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Channeling effects and quad chain implantation process optimization for low energy boron ionsKondratenko, S. / Reece, R.N. / Ra, G.-J. / Salam, S. et al. | 2002
- 76
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The role of pre-anneal conditions on the microstructure of Ge+ implanted Si after high temperature milli-second flash annealingJones, K.S. / Crane, S.P. / Ross, C.E. / Malmborg, T. / Downey, D. / Arevalo, E. et al. | 2002
- 79
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The Effect of Sub-1000^oC Source/Drain Anneal Temperature on Transistor in Conventional SiO~2 Integration and High-k Dielectric IntegrationLim, J. E. / Kim, Y. / Torres, K. / Bersuker, G. / Brown, G. / Bennett, J. / Foran, B. / Larson, L. / IEEE et al. | 2002
- 79
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The effect of sub-1000°C source/drain anneal temperature on transistor in conventional SiO2 integration and high-k dielectric integrationJae Eun Lim, Jae Eun Lim / Yudong Kim, Yudong Kim / Torres, K. / Bersuker, G. / Brown, G. / Bennett, J. / Foran, B. / Larson, L. et al. | 2002
- 83
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Production worthy repeatability of spike annealsPaul, S. / Bayha, B. / Lerch, W. / Merkl, C. / Downey, D.F. / Arevalo, E.A. et al. | 2002
- 87
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Ultra-shallow implant anneal using single wafer rapid thermal furnaceWoo Sik Yoo, Woo Sik Yoo / Takahashi, N. et al. | 2002
- 91
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Selective silicon processing for advanced ultra shallow junction engineeringScudder, L. / Al-Bayati, A. et al. | 2002
- 96
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Recessed junction and low energy n-junction implantation characteristicsLee, B.C. / Yoo, J.R. / Lee, D.H. / Kim, C.S. / Kim, S.M. / Choi, S. / Chung, U.I. / Moon, J.T. et al. | 2002
- 100
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Ultrashallow P+/N junctions using BCl2+ implantations for sub 0.1 μm CMOS devicesLaviron, C. / Milesi, F. / Mathieu, G. et al. | 2002
- 100
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Ultrashallow P+/N Junctions Using BC12+ Implantation for Sub 0.1 muM CMOS DevicesLaviron, C. / Milesi, F. / Mathieu, G. / IEEE et al. | 2002
- 103
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Shallow junction technology for advanced CMOS devices - transitioning to plasma doping from beamline implantationWalther, S.R. / Variam, N. / Norasethekul, S. / Weeman, J. / Mehta, S. et al. | 2002
- 107
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Considerations for integrated monitoring of the shallow junction formation processLeung, B. / Leung, S. / Tam, N. / McIntosh, R. / Tsai, G. / Chang, M. / Jao, A. / Huang, H. / Hsueh-Lin Sun, Hsueh-Lin Sun et al. | 2002
- 111
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Arsenic Dimer Implants for Shallow Extension in 0.13 mum Logic DevicesChang, B. / Chang, J. / Agarwal, A. / Ameen, M. S. / Reece, R. N. / IEEE et al. | 2002
- 111
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Arsenic dimer implants for shallow extension in 0.13μm logic devicesChang, B. / Chang, J. / Agarwal, A. / Ameen, M.S. / Reece, R.N. / Chen, H.I. / Chien, D. / Tsai, C.C. / Tsai, M. / Weng, C.L. et al. | 2002
- 115
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Evaluation of the boron activation and depth distribution using BBr2+ implantsWinston, S.H. / Gwilliam, R.M. / Sealy, B.J. / Boudreault, G. / Jeynes, C. / Webb, R.P. / Kirkby, K.J. et al. | 2002
- 119
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Molecular n-type dopant implantsAgarwal, A. / Stevenson, B.A. / Ameen, M.S. / Freer, B.S. / Poate, J.M. et al. | 2002
- 122
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Low energy implant throughput improvement by using the Arsenic dimer ion (As2+) on the Axcelis GSDIII/LED ion implanterKopalidis, P. / Sohl, C. / Freer, B.S. / Arneen, M. / Reece, R. / Rathmell, M. et al. | 2002
- 126
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TCAD modeling and experimental investigation of indium for advanced CMOS technologyGraoui, H. / Al-Bayati, A. / Erlebach, A. / Zechner, C. / Benistant, F. / Allen, A. / Banks, P. / Murrell, A. et al. | 2002
- 131
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Experimental and simulation studies of the channeling phenomena for high energy implantationGuo, B.N. / Variam, N. / Jeong, U. / Mehta, S. / Posselt, M. / Lebedev, A. et al. | 2002
- 135
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Method of forming high voltage CMOS transistors using a modified SADS processWong, J. / Daryanani, S. et al. | 2002
- 139
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Different ion implanted edge terminations for Schottky diodes on SiCWeiss, R. / Frey, L. / Ryssel, H. et al. | 2002
- 143
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Effect of implant temperature on electrical characteristics of implanted monocrystalline-emitter bipolar transistorsSargunas, V. / Thiefain, P. / Singh, A. / Taduri, S. / Melosky, S. et al. | 2002
- 147
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Characterisation of low energy antimony (2-5 keV) implantation into siliconCollart, E.J.H. / Kirkwood, D. / Van den Berg, J.A. / Werner, M. / Vandervorst, W. / Brijs, B. / Bailey, P. / Noakes, T.C.Q. et al. | 2002
- 151
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Comparison of plasma doping and beamline technologies for low energy ion implantationRenau, A. / Scheuer, J.T. et al. | 2002
- 157
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Ion implant requirements for high volume DRAM manufacturingStuber, A. / Soo-Chul Jang, Soo-Chul Jang / Wang-Kuen Kim, Wang-Kuen Kim et al. | 2002
- 161
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USJ process requirements on low energy doping and spike anneal for production for 90 nm node CMOS LOGICNakao, H. / Momiyama, Y. / Kase, M. / Ito, H. / Matsunaga, Y. et al. | 2002
- 165
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High accuracy and rapid dose measurements for ultra-low energy ion implantation using low energy x-ray emission spectroscopyCorcoran, S.F. / Hombourger, C. / Staub, P. / Schuhmacher, M. et al. | 2002
- 169
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In-line measurement of Xj on 300 mm wafersCorcoran, S. / Gillespie, P. / Segovia, M. / Borden, P. et al. | 2002
- 173
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Advantages of single and mixed species chaining for high productivity in high and mid-energy implantationNitodas, S.F. / Ameen, M.S. / Rubin, L.M. et al. | 2002
- 177
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Characterization of boron and phosphorus surface contamination in high current ion implantationBernstein, J.D. / Alvarez, A.W. / Benton, E.B. / Cherukuri, K.C. / Otten, C.M. et al. | 2002
- 181
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Charge exchange and neutral transport contributions to energy contamination in decel mode, sub-keV ion implantationArmour, D.G. / van den Berg, J.A. / Wostenholm, G. / Al-Bayati, A.H. / Murrell, A. / Goldberg, R.D. / Collart, E.H.J. et al. | 2002
- 185
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Advanced CMOS device sensitivity to USJ processes and the required accuracy of doping and activationAl-Bayati, A. / Graoui, H. / Spear, J. / Ito, H. / Matsunaga, Y. / Ohuchi, K. / Adachi, K. / Miyashita, K. / Nakayama, T. / Oowada, M. et al. | 2002
- 189
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Accuracy of Doping and Process Optimization for 0.18 mum PMOS TechnologyGraoui, H. / Al-Bayati, A. / Tichy, R. / IEEE et al. | 2002
- 189
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Accuracy of doping and process optimization for 0.18 μm PMOS technologyGraoui, H. / Al-Bayati, A. / Tichy, R. et al. | 2002
- 193
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Beam angle control on the VIISta 80 ion implanterCampbell, C. / Cummings, J. / Lindberg, R. / Olson, J.C. / Radovanov, S.B. / Smatlak, D.L. et al. | 2002
- 197
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Investigation of implantation-induced defects in thin gate oxides using low field tunnel currentsJank, M.P.M. / Frey, L. / Bauer, A.J. / Ryssel, H. et al. | 2002
- 201
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Characterization of charging damage in plasma dopingHenke, D. / Walther, S. / Weeman, J. / Dirnecker, T. / Ruf, A. / Beyer, A. / Lee, K. et al. | 2002
- 205
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In-line implant/anneal module monitoring of ultra shallow junctionsBorden, P. / Gillespie, P. / Al-Bayati, A. / Lazik, C. et al. | 2002
- 209
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Charging on resist-patterned wafers during high-current ion implantsLukaszek, W. / Daryanani, S. / Shields, J. et al. | 2002
- 213
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Issues involved in the use of an As++ punch-through implant for a PMOS transistorDaryanani, S. / Suda, D. et al. | 2002
- 217
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ENCOTION - A new simulation tool for energetic contamination analysisHaublein, V. / Frey, L. / Ryssel, H. et al. | 2002
- 221
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Energy contamination control during ion beam deceleration for low energy ion implantationZhimin Wan, Zhimin Wan / Jiong Chen, Jiong Chen / Tang, D. / Linuan Chen, Linuan Chen et al. | 2002
- 225
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Integrated implant-RTP process monitor using solid phase epitaxy activationMacKinnon, S.L. / Batinica, G. / Clayton, S. / Csanadi, O. et al. | 2002
- 229
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Plasma doping junction depth measurement using Therma-Probe systemBon-Woong Koo, Bon-Woong Koo / Ziwei Fang, Ziwei Fang / Bakshi, M. / Nicolaides, L. / Cherekdjian, S. et al. | 2002
- 233
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Improved dose performance using Threshold Activated Dose Control™Breeden, T. / Rendon, M.J. / Wissel, D. / Lillian, P. et al. | 2002
- 233
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Improved Dose Performance Using Threshold Activated Dose Control™Breeden, T. / Rendon, M. J. / Wissel, D. / Lillian, P. / IEEE et al. | 2002
- 237
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Absolute dose performance of the SWIFT single wafer ion implanterClaudio, G. / Boudreault, G. / Jeynes, C. / Sealy, B.J. / Low, R. et al. | 2002
- 240
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Advances in optical densitometry for low dose measurementsKuzbyt, R. / Eddy, R. / White, N.R. / Callahan, R. et al. | 2002
- 244
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Accurate characterization of dose and shape of ultra low energy arsenic (1keV and 2keV) implants by SIMSBiswas, S. / Mulcahy, C. / Banks, P. / Collart, E. et al. | 2002
- 248
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Dose monitoring of heavy ion implantation by Therma-Wave signalSano, M. / Harada, M. / Kabasawa, M. / Sato, F. / Sugitani, P. et al. | 2002
- 252
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Stability improvement of Therma-Wave signal by pre-annealingHarada, M. / Sano, M. / Izutani, H. et al. | 2002
- 256
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Ultra shallow junction monitoringCherekdjian, S. / Nicolaides, L. / Bakshi, M. et al. | 2002
- 260
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Dose theory and pressure compensation on Axcelis GSD high current implanterKraupner, J. / Kyek, A. / Vogl, J. / Weiss, S. et al. | 2002
- 264
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Shallow arsenic profiling using medium energy ion scattering (MEIS)Nakagawa, T. / Fujita, M. / Ichihara, S. / Abo, S. / Kinomura, A. / Inoue, Y. / Takai, M. et al. | 2002
- 268
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Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instrumentsBersani, M. / Lazzeri, P. / Giubertoni, D. / Barozzi, M. / Marchi, E.B. / Anderle, M. et al. | 2002
- 272
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SIMS analysis of small area device samplesSams, D.B. / Wang, L. / Wang, A. / Sheng, J. et al. | 2002
- 276
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Precise beam incidence angle control on the VIISta 810HPWeeman, J. / Olson, J. / Guo, B.N. / Jeong, U. / Li, G.C. / Mehta, S. et al. | 2002
- 279
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Precision halo control with antimony and indium on Axcelis medium current ion implantersLuckman, G. / Harris, M. / Rathmell, R.D. / Kopalidis, P. / Ray, A.M. / Sato, F. / Sano, M. et al. | 2002
- 283
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Seamless transferability of doping processes between the VIISta platform of ion implantersVariam, N. / Mehta, S. / Norasetthekul, S. / Guo, B.N. et al. | 2002
- 287
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Influence of batch-to-batch substrate variation and cone effect on high energy implant distribution profileHai, Y. / Shauly, E.N. et al. | 2002
- 291
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Influence of antenna shape and resist patterns on charging damage during ion implantationDirnecker, T. / Frey, L. / Bauer, A.J. / Ryssel, H. / Ruf, A. / Henke, D. / Beyer, A. et al. | 2002
- 295
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Application of non-contact C-V measurement in evaluation of ion implantation induced wafer chargingKo, S. / Kohno, M. et al. | 2002
- 299
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Charging effects on medium current implanter on CMOS and mixed signal IC'sGandy, T.H. / Sargunas, V. / Singh, A. / Taduri, S. / Thiefain, P. / Ameen, M.S. / Rathmell, R. et al. | 2002
- 303
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Photoresist wafer processing with the SWIFT ion implanterMast, K. / Low, R.J. / Knowles, D. / Junker, M. et al. | 2002
- 307
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Performance of RF plasma flood gun for medium current implanterHamamoto, N. / Sakai, S. / Ikejiri, T. / Tanjyo, M. et al. | 2002
- 311
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Development of DC-PFG for a large size ion beam in ion doping systemMaeno, S. / Ando, Y. / Inouchi, Y. / Tanaka, H. / Naito, M. et al. | 2002
- 315
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Plasma electron flood for a scanned beam implanterSano, M. / Kabasawa, M. / Sato, F. / Sugitani, M. et al. | 2002
- 319
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Particle reduction strategies for high current-high volume manufacturingBeatty, T. / Hatch, P. / Santiesteban, R. / Taduri, S. / Krantz, B. / Melosky, S. / Marshall, D.A. / Ameen, M.S. et al. | 2002
- 323
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Successful integration of in-situ particle monitoring into a volume 300mm high current implant manufacturing systemSimmons, J. / Scottney-Castle, M. / Maskiell, C. / Lumpkin, J. et al. | 2002
- 327
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Investigation of phosphorus contamination in 49BF2+ implantsSahores, F. / Lenoble, D. / Labrado, F. / Baylac, B. et al. | 2002
- 331
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Ion implant data log analysis for process control and fault detectionRendon, M.J. / Sing, D.C. / Beard, M. / Hartig, M. / Arnold, J.C. et al. | 2002
- 335
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Local area network (LAN) address manufacturing and development implant tool issuesRendon, M.J. / Sing, D.C. et al. | 2002
- 338
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Comparison of Indium Metrology using LEXES and SIMsKouzminov, D. / Li, Y. / Hunter, J. / Staub, P. / Hombourger, C. / Schuhmacher, M. / Graoui, H. / Al-Bayati, A. / Foad, M. / IEEE et al. | 2002
- 338
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Comparison of indium metrology using LEXES and SIMS [semiconductor doping]Kouzminov, D. / Yupu Li, Yupu Li / Hunter, J. / Graoui, H. / Al-Bayati, A. / Foad, M. / Staub, P. / Hombourger, C. / Schuhmacher, M. et al. | 2002
- 342
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Construction and performance of a bench-top mapping positron alpha toolColeman, P.G. / Burrows, C.P. / Knights, A.P. / Sealy, B.J. / Gwilliam, R.M. et al. | 2002
- 346
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Investigation of lanthanum contamination from a lanthanated tungsten ion sourceHaublein, V. / Frey, L. / Ryssel, H. / Walser, H. et al. | 2002
- 350
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Dose reproducibility in Axcelis GSD implanters using Stabil-Ion gaugeJohnson, R.C. / Tysinger, R. et al. | 2002
- 353
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Monitoring of ion implanters using multiple dopantsPong, R. / Schuur, J. / Weisenberger, W. / Johnson, R. et al. | 2002
- 356
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In-Line/In-Situ Doping Monitoring Facility Using Ion Beams at Alabama A&M University-Current StatusMuntele, C. I. / Muntele, I. C. / Ila, D. / Holland, L. R. / Zimmerman, R. L. / Nisen, D. / Schilloff, M. / IEEE et al. | 2002
- 356
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In-line/in-situ doping monitoring facility using ion beams at Alabama A&M UniversityMuntele, C.I. / Muntele, I.C. / Ila, D. / Holland, L.R. / Zimmerman, R.L. / Nisen, D. / Schilloff, M. et al. | 2002
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Low energy ion beam transportGraf, M.A. / Vanderberg, B. / Benveniste, V. / Tieger, D.R. / Ye, J. et al. | 2002
- 365
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Quantum II™: Low Energy Beamline Innovations for Increased Manufacturing ProductivityGoldberg, R. / Burgess, C. / Murrell, A. / Armour, D. / IEEE et al. | 2002
- 365
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Quantum II TM : low energy beamline innovations for increased manufacturing productivityGoldberg, R. / Burgess, C. / Murrell, A. / Armour, D. et al. | 2003
- 365
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Quantum II™ : low energy beamline innovations for increased manufacturing productivityGoldberg, R. / Burgess, C. / Murrell, A. / Armour, D. et al. | 2002
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Implications of halo and well implant conditions on sub-140nm device technologiesFoad, M.A. / Doherty, R. / Ito, H. / Matsunaga, Y. / Mitsuda, K. / Honda, M. / Ikeda, S. / Hess, D. et al. | 2002
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Introducing the LEX/LEX3, new low energy high current implantersTsukihara, M. / Sugitani, M. / Kabasawa, M. / Murooka, H. / Murakami, J. / Hidaka, Y. et al. | 2002
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Versatile medium ion implanter EXCEED2300VFujisawa, H. / Matsumoto, T. / Nakaya, M. / Yamashita, T. / Miyamoto, N. / Miyabayashi, K. / Kobayashi, T. / Yamamoto, Y. / Nakamura, M. / Nagayama, T. et al. | 2002
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Introducing the ORion II NV7392 flat panel ion doping systemSato, M. / Maruyama, M. / Sakanishi, H. / Isobe, E. / Yoshida, K. / Nishihara, T. / Ochi, T. / Inada, K. / Murata, H. / Brailove, A. et al. | 2002
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High current and wide beam ion implanter for LTPS TFT-LCDMiyatake, N. / Tsuji, Y. / Itou, K. / Hoshijima, H. / Shimamura, K. et al. | 2002
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The Ibis i2000 SIMOX ion implanterBlake, J. / Richards, S. et al. | 2002
- 395
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Boron bromide as a source precursor for low energy applicationsGwilliam, R. et al. | 2002
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Development of new antimony and indium dopants for ion implantationWang, Z. / McMahon, C.N. / Xu, C. / Baum, T.H. / Mayer, J. / Wang, L. et al. | 2002
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Study of pulsed plasma doping by Langmuir probe and ion mass-energy analyzerZiwei Fang, Ziwei Fang / Bon-Woong Koo, Bon-Woong Koo / Felch, S. / Yu Lei, Yu Lei / Overzet, L.J. / Goeckner, M. et al. | 2002
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Increasing B+ current from a microwave ion source by simultaneously utilizing new techniquesSakudo, N. / Tazaki, Y. / Matsumine, M. / Tamashiro, Y. / Nishimoto, R. / Ito, H. / Takahashi, M. / Matsunaga, Y. et al. | 2002
- 411
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Application of isotopically enriched germanium tetrafluoride for contaminant reduction and ion source lifetime benefitsSinn, C. et al. | 2002
- 413
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Production of multicharged iron ions from solid and application to material processingKato, Y. / Sugiyama, S. / Miyata, M. / Ishii, S. et al. | 2002
- 417
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Varian semiconductor indirectly heated cathode sourcesOlson, J.C. / Maciejowski, P.E. / Shengwu Chang, Shengwu Chang / Klos, L. et al. | 2002
- 420
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Germanium operation on the GSDIII/LED and ultra high current ion implantersFreer, B.S. / Rutishauser, H. / Tieger, D.R. / Graf, M.A. / Stone, M. / Perel, A.S. / Matsushita, H. / Muto, H. / Kabasawa, M. et al. | 2002
- 424
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Evaluation and integration of a new gas source package for boron trifluoride used in ion implantationMckee, D.J. / Van Horn, L.J. et al. | 2002
- 428
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Oxygen implants using water vapor as source feed gas in high and medium current implantersPlatow, W. / Todorov, S. et al. | 2002
- 432
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Water cooled plasma flood source for intense ion beam implantationZhimin Wan, Zhimin Wan / Linuan Chen, Linuan Chen / Jiong Chen, Jiong Chen et al. | 2002
- 436
-
Reduction of charge exchange effects on the VIISta810Schmeide, M. / Gammel, G. / Scheuer, J. et al. | 2002
- 440
-
Process performance for Virtual Slot Disk/Triple Surface Disk Faraday on a multi-wafer high current ion implantation systemLee, H. / Mikkilineni, S. / Knerr, R. / Harris, M.A. / Chow, J. / Kopalidis, P. / Ameen, M.S. et al. | 2002
- 444
-
Refurbishment of epoxy accelerator column bushingsPeebles, H. / Bishop, S. et al. | 2002
- 448
-
Optimisation of large beam mass analysisAitken, D. et al. | 2002
- 452
-
Report on in-situ antimony fluoride generation for ion implant processesArno, J. et al. | 2002
- 455
-
Cleaning procedure for indium implantationYamashita, T. / Miyamoto, N. / Miyabayashi, K. / Nagayama, T. et al. | 2002
- 459
-
Utilizing SDS® and VAC™ Gas Sources as a Hazardous Gas Management Strategy within an Ion Implant ModuleIsaacs, B. W. / Seekon, D. R. / Mayer, J. J. / IEEE et al. | 2002
- 459
-
Utilizing SDS® and VAC™ gas sources as a hazardous gas management strategy within an ion implant moduleIsaacs, B.W. / Seekon, D.R. / Mayer, J.J. et al. | 2002
- 463
-
Evaluation of a novel antimony source delivered as vapor from an implanter gas boxIsaacs, B.W. / Seekon, D.R. / Newman, D. et al. | 2002
- 467
-
Elemental analysis of residual deposits in an ion implanter using IBA techniquesMefo, J. / Kirkby, K.J. / Sealy, B.J. / Boudreault, G. / Jeynes, C. / Collart, E.J.H. et al. | 2002
- 471
-
Characterization and environmental impact of plasma products within an ion implanterZarrug, H. / Mefo, J. / Sealy, B. / Boudreault, G. / Jeynes, C. / Webb, R.P. / Kirkby, K.J. / Collart, E.J.H. et al. | 2002
- 475
-
Gas-phase FT-IR characterization of ion implant process effluentsArno, J. / Sweeney, J. / Marganski, P. / Faller, R. / Roberge, S. / Dolan, M.C. et al. | 2002
- 479
-
Zero Footprint Dry Scrubber for Ion Implant-Development and Evaluation in a Manufacturing EnvironmentSweeney, J. / Arno, J. / Faller, R. / Marganski, P. / Ramirez, C. / Dunn, J. / IEEE et al. | 2002
- 479
-
Zero footprint dry scrubber for ion implantSweeney, J. / Arno, J. / Faller, R. / Marganski, P. / Ramirez, C. / Dunn, J. et al. | 2002
- 483
-
Developments in the abatement of ion implant process effluentsArno, J. / Sweeney, J. / Marganski, P. / Kingston, B. / Roberge, S. / Dolan, M.C. et al. | 2002
- 487
-
An effective scheme for the application of a life safety system for the entire ion implant moduleRivera, N. / Sherrett, M. / Mayer, J. et al. | 2002
- 491
-
Process performance of the ULVAC IW-630 200/300mm implanterRhoad, T. / Lovelace, B. / Suzuki, H. / Niikura, K. / McLaughlin, T. et al. | 2002
- 495
-
Beam parallelism in the ULVAC IW-630 medium current implanterSuzuki, H. / Niikura, K. / McLaughlin, T. / Rhoad, T. et al. | 2002
- 498
-
Introduction of the new high voltage, engineering (HVE) accelerator for high energy/high current ion implantationKoudijs, R. / Gottdang, A. / Mous, D.J.W. et al. | 2002
- 501
-
Performance characteristics of the Varian Semiconductor VIISta 3000 single wafer high energy ion implanterThornton, A. / Shengwu Chang, Shengwu Chang / Hacker, D. et al. | 2002
- 505
-
Capacity increase for existing Varian EHP220 and EHP500 implantersAli, K.X. et al. | 2002
- 507
-
Process and productivity improvements during high pressure photoresist outgassingCarpenter, N. / Fecteau, T. et al. | 2002
- 511
-
Optimizing implanter vacuum performance with various cassette materialsEvans, M. / O'Neil, J. / Komma, B. et al. | 2002
- 515
-
Implant energy determination from time-of-flight measurementScherer, E. / Wenzel, K.W. / Halling, M. et al. | 2002
- 519
-
Improvements to the ease of LINAC Dataset generation for high energyHalling, A.M. / Murphy, J. / Nitodas, S.F. et al. | 2002
- 522
-
High efficiency and low cost LINAC system design suitable for high energy ion implantersJiong Chen, Jiong Chen / Zhimin Wan, Zhimin Wan et al. | 2002
- 526
-
Recipe generator for the VIISta platformCucchetti, A. / Gibilaro, G. et al. | 2002
- 530
-
Meeting the well doping requirement of sub 100nm devices - process performance characteristics of the VIISta 3000 implanterNorasetthekul, S. / Guo, B.N. / Flanagan, J. / Variam, N. / Mehta, S. et al. | 2002
- 534
-
He++ implants using the EHPi-500 implanterPlatow, W. / Todorov, S. / Hamilton, I. et al. | 2002
- 538
-
Thermal evolution of interstitial defects in implanted siliconClaverie, A. / Cristiano, F. / Colombeau, B. / Scheid, E. / De Mauduit, B. et al. | 2002
- 544
-
Effect of microwave radiation on boron activationThompson, K. / Booske, J.H. / Downey, D.F. / Arevalo, E.A. et al. | 2002
- 548
-
Electrical activation of implanted single crystal germanium substratesJasper, C. / Rubin, L. / Lindfors, C. / Jones, K.S. / Jungwoo Oh, Jungwoo Oh et al. | 2002
- 552
-
Effects of carbon content and annealing conditions, on the electrical activation of indium implanted siliconGennaro, S. / Sealy, B.J. / Jeynes, C. / Gwilliam, R. / Collart, E.H.J. / Licciardello, A. et al. | 2002
- 556
-
Quantum mechanical model of electronic stopping power for ions in a free electron gasYang, C. / Di Li, Di Li / Geng Wang, Geng Wang / Li Lin, Li Lin / Tasch, A.F. / Banerjee, S. et al. | 2002
- 560
-
Study of damage formation by low-energy boron cluster ion implantationAoki, T. / Matsuo, J. / Takaoka, G. et al. | 2002
- 564
-
A compact model for the simulation of ion implantationAndreas, K. et al. | 2002
- 567
-
New implantation tables for B, BF2, P, As, In and SbZechner, C. / Erlebach, A. / Terterian, A. / Scholze, A. / Johnson, M. et al. | 2002
- 571
-
Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impactsInsepov, Z. / Toyoda, N. / Yamada, I. / Allen, L.P. / Santeufemio, C.L. et al. | 2002
- 575
-
Dopant ion induced electron emission yield from IC target materialsArrale, A.M. / Zhao, Z.Y. / Cherekdjian, S. et al. | 2002
- 579
-
Effect of Implant Conditions on the Optical and Structural Properties of beta-FeSi~2Butler, T. M. / McKinty, C. N. / Homewood, K. P. / Gwilliam, R. M. / Kirkby, K. J. / Shao, G. / Edwards, S. / IEEE et al. | 2002
- 579
-
Effect of implant conditions on the optical and structural properties of β-FeSi2Butler, T.M. / McKinty, C.N. / Homewood, K.P. / Gwilliam, R.M. / Kirkby, K.J. / Shao, G. / Edwards, S. et al. | 2002
- 583
-
Sputtering of Si with decaborane cluster ionsCheng Li, Cheng Li / Gladczuk, L. / Sosnowski, M. / Gossmann, H.-J.L. et al. | 2002
- 587
-
NEXAFS study of DLC films prepared by Ar cluster and monomer ion assisted depositionKitagaw', T. / Miyauchi, K. / Toyoda, N. / Kanda, K. / Matsui, S. / Tsubakino, H. / Mastuo, J. / Yamada, I. et al. | 2002
- 591
-
The effect of temperature during helium ion implantation-induced crystallization of iron-based amorphous alloysWakabayashi, H. / San-no, T. / Toriyama, T. / Hayashi, N. et al. | 2002
- 594
-
Ultra-shallow p-n junction formation by ion implantation at high energy?Vyatkin, A.F. / Zinenko, V.I. / Pustovit, A.N. / Agafonov, Yu.A. et al. | 2002
- 597
-
High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Sivan den Berg, J.A. / Armour, D.G. / Werner, M. / Whelan, S. / Vandervorst, W. / Clarysse, T. / Collart, E.H.J. / Goldberg, R.D. / Bailey, P. / Noakes, T.C.Q. et al. | 2002
- 601
-
Ellipsometric characterization of shallow damage profiles created by Xe-implantation into siliconPetrik, P. / Polgar, O. / Lohner, T. / Fried, M. / Khanh, N.Q. / Gyulai, J. / Ramadan, E. et al. | 2002
- 605
-
Dose and implantation temperature influence on disorder produced by Ar+ ion implantation into GaNUsov, I. / Parikh, N. / Thomson, D. / Reitmeier, Z. / Davis, R. / Kudriavtsev, Y. / Asomoza, R. et al. | 2002
- 610
-
An effective electrical isolation scheme by iron implantation at different substrate temperaturesToo, P. / Ahmed, S. / Sealy, B.J. / Gwilliam, R. et al. | 2002
- 614
-
Electrical behaviour of arsenic implanted silicon wafers at large tilt angleClaudio, G. / Jeynes, C. / Kirkby, K.J. / Sealy, B.J. / Gwilliam, R. / Low, R. et al. | 2002
- 618
-
Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regimeBayha, B. / Paul, S. / Lerch, W. / Downey, D.F. / Arevalo, E.A. / Hebras, X. / Cherkashin, N. et al. | 2002
- 622
-
Structural and electronic properties of Fe+ implanted Cr filmsHeck, C. / Chayahara, A. / Horino, Y. / Funahashi, R. / Miranda, R.M.N. / Baibich, M.N. et al. | 2002
- 625
-
SIMS depth profiling and SRIM simulation to lower energy antimony implantation into siliconYupu Li, Yupu Li / Shyue, J. / Hunter, J. / McComb, B. / Chun, M. / Doherty, R. / Foad, M. et al. | 2002
- 629
-
SIMOX wafer fabrication by 100mA O+ implantation using the UI-6000 implanterTokiguchi, K. / Seki, H. / Seki, T. / Itou, J. / Higuchi, Y. / Mera, K. / Tanaka, S. / Yamashita, Y. / Hashimoto, I. / Yoshikawa, A. et al. | 2002
- 633
-
Low energy ion implantation into SOI substratesKirkwood, D. / Murrell, A. / Collart, E. / Banks, P. / Fontaniere, R. / Maleville, C. et al. | 2002
- 637
-
The mainstreaming of SOICeller, G.K. / Wittkower, A. et al. | 2002
- 641
-
Crystal fracture induced by decorating of postimplantation defects: Silicon layer delaminationUsenko, A. / Carr, W. / Bo Chen, Bo Chen et al. | 2002
- 645
-
Depth Positioning of Silicon Nanoparticules Created by Si ULE Implants in Ultrathin SiO~2Assayag, G. B. / Carrada, M. / Bonafos, C. / Chassaing, D. / Claverie, A. / Soncini, V. / Normand, P. / Tsoukalas, D. / Dimitrakis, P. / Kapetanakis, E. et al. | 2002
- 645
-
Depth positioning of silicon nanoparticles created by Si ULE implants in ultrathin SiO2Ben Assayag, G. / Carrada, M. / Bonafos, C. / Chassaing, D. / Claverie, A. / Normand, P. / Tsoukalas, D. / Dimitrakis, P. / Kapetanakis, E. / Soncini, V. et al. | 2002
- 649
-
Accurate TEM measurements of the injection distances in nanocrystal based memoriesCarrada, A. / Assayag, B.G. / Bonafos, C. / Claverie, A. / Normand, P. / Tsoukalas, D. et al. | 2002
- 653
-
Optical properties and applications of heavily Fe implanted InPCesca, T. / Gasparotto, A. / Fraboni, B. / Priolo, F. / Moreira, E.C. / Scamarcio, G. et al. | 2002
- 657
-
Evolution of the local Fe environment in high temperature implanted InPGasparotto, A. / Cesca, T. / Mattei, G. / Rampazzo, V. / Priolo, F. / Moreira, E.C. / Bocchi, C. / Fraboni, B. / Boscherini, F. / Ciatto, G. et al. | 2002
- 661
-
Cluster ion beam processing - METI/NEDO projects and recent progress $Yamada, I. / Matsuo, J. / Toyoda, N. et al. | 2002
- 665
-
Design issues in gas cluster ion beamlinesMack, M.E. / Becker, R. / Gwinn, M. / Swenson, D.R. / Torti, R.P. / Roby, R. et al. | 2002
- 669
-
Gas cluster ion beam processing equipmentBachand, J. / Freytsis, A. / Harrington, E. / Gwinn, M. / Hofmeester, N. / Hautala, J. / Mack, M.E. / Regan, K. et al. | 2002
- 673
-
Development of the large current cluster ion beam technologySeki, T. / Matsuo, J. / Takaoka, G.H. et al. | 2002
- 677
-
Nanometer-scale silicide structures formed by focused ion-beam implantationAlford, T.L. / Mitan, M. / Mayer, J.W. et al. | 2002
- 682
-
Diffusion and defect formation in ion implanted Si nanostructuresHogg, S.M. / Kluth, P. / Lenk, S. / Zhang, M. / Trellenkamp, S. / Moers, J. / Mantl, S. et al. | 2002
- 686
-
Activation behavior of BF2+ implants in RTP annealed siliconDrobny, V.F. / Chang, K. / Robinson, D. et al. | 2002
- 690
-
Negative-ion implantation into thin SiO2 film on Si and formation of silver nanoparticles in the filmIshikawa, J. / Tsuji, H. / Motono, M. / Gotoh, Y. / Arai, N. / Adachi, K. / Kotaki, H. et al. | 2002
- 694
-
Optimization of P+/N junction formation using solid phase epitaxy for the 100 nm technology node and beyondGraoui, H. / Al-Bayati, A. / Duane, M. / Tichy, R. et al. | 2002
- 698
-
Boron diffusion in Si1-xGex alloy layersOhno, N. et al. | 2002
- 701
-
High quality optical thin film formation with low energy gas cluster ion beam irradiationToyoda, N. / Yamada, I. et al. | 2002
- 705
-
Metal negative-ion implantation into rutile TiO2 and enhancement of photocatalytic property under irradiation of fluorescent lightTsuji, H. / Sugahara, H. / Gotoh, Y. / Ishikawa, J. et al. | 2002
- 709
-
Gold Nanocluster Formation in Silicon Carbide Using Ion ImplantationBlanchet, X. / Muntele, I. / Muntele, C. I. / Ila, D. / IEEE et al. | 2002
- 709
-
Gold nanoclusters formation in silicon carbide using ion implantationBlanchet, X. / Muntele, I. / Muntele, C.I. / Ila, D. et al. | 2002
- 713
-
Raman and FTIR studies on nanostructure formation on silicon carbideMuntele, I. / Muntele, C.I. / Ila, D. / Poker, D.B. / Hensley, D.K. et al. | 2002
- 716
-
Ion implantation and dynamic annealing effects in perovskite oxidesYupu Li, Yupu Li et al. | 2002
- 721
-
Author index| 2002
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2002 14th International Conference on Ion Implantation Technology Proceedings (IEEE Cat. No.02EX505)| 2002