Residual phase noise performance of X-band GaAs FET amplifiers at liquid nitrogen temperature (Englisch)
- Neue Suche nach: Mizan, M.
- Neue Suche nach: McGowan, R.
- Neue Suche nach: Mizan, M.
- Neue Suche nach: McGowan, R.
In:
IEE Proceedings G (Circuits, Devices and Systems)
;
139
, 1
;
37-38
;
1992
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Residual phase noise performance of X-band GaAs FET amplifiers at liquid nitrogen temperature
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Beteiligte:Mizan, M. ( Autor:in ) / McGowan, R. ( Autor:in )
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Erschienen in:IEE Proceedings G (Circuits, Devices and Systems) ; 139, 1 ; 37-38
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Verlag:
- Neue Suche nach: IET Digital Library Archive
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Erscheinungsdatum:01.02.1992
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Format / Umfang:2 pages
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:field effect integrated circuits , gallium arsenide , MIC , X-band , FET amplifiers , solid-state microwave circuits , electron device noise , microwave amplifiers , liquid nitrogen temperature , III-V semiconductors , MMIC , GaAs , residual phase noise , cryogenics , 77 K , room temperature , microwave integrated circuits
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Datenquelle:
Inhaltsverzeichnis – Band 139, Ausgabe 1
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