AlN capped annealing of Se and Sn implanted semi-insulating GaAs (Englisch)
- Neue Suche nach: Bensalem, R.
- Neue Suche nach: Barrett, N.J.
- Neue Suche nach: Sealy, B.J.
- Neue Suche nach: Bensalem, R.
- Neue Suche nach: Barrett, N.J.
- Neue Suche nach: Sealy, B.J.
In:
Electronics Letters
;
19
, 3
;
112-113
;
1983
- Aufsatz (Zeitschrift) / Print
-
Titel:AlN capped annealing of Se and Sn implanted semi-insulating GaAs
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Beteiligte:
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Erschienen in:Electronics Letters ; 19, 3 ; 112-113
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Verlag:
- Neue Suche nach: IET Digital Library Archive
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Erscheinungsdatum:03.02.1983
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Format / Umfang:2 pages
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 19, Ausgabe 3
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