Monolithic integration of a transverse-junction stripe laser and metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate (Englisch)
- Neue Suche nach: Ohta, J.
- Neue Suche nach: Kuroda, K.
- Neue Suche nach: Mitsunaga, K.
- Neue Suche nach: Kyuma, K.
- Neue Suche nach: Hamanaka, K.
- Neue Suche nach: Nakayama, T.
- Neue Suche nach: Ohta, J.
- Neue Suche nach: Kuroda, K.
- Neue Suche nach: Mitsunaga, K.
- Neue Suche nach: Kyuma, K.
- Neue Suche nach: Hamanaka, K.
- Neue Suche nach: Nakayama, T.
In:
Electronics Letters
;
23
, 10
;
509-510
;
1987
- Aufsatz (Zeitschrift) / Print
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Titel:Monolithic integration of a transverse-junction stripe laser and metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate
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Beteiligte:Ohta, J. ( Autor:in ) / Kuroda, K. ( Autor:in ) / Mitsunaga, K. ( Autor:in ) / Kyuma, K. ( Autor:in ) / Hamanaka, K. ( Autor:in ) / Nakayama, T. ( Autor:in )
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Erschienen in:Electronics Letters ; 23, 10 ; 509-510
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Verlag:
- Neue Suche nach: IET Digital Library Archive
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Erscheinungsdatum:07.05.1987
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Format / Umfang:2 pages
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:integrated optoelectronics , transverse-junction stripe laser , OEIC , GaAs substrate , high-speed operation , Schottky gate field effect transistors , monolithic integration , MESFET , molecular beam epitaxial growth , semiconductor junction lasers , two-step molecular beam epitaxy , flat surface well
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Datenquelle:
Inhaltsverzeichnis – Band 23, Ausgabe 10
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