Active mode-locking of an external cavity GaInAsP laser incorporating a fibre-grating reflector (Englisch)
- Neue Suche nach: Burns, D.
- Neue Suche nach: Crust, D.W.
- Neue Suche nach: Chang, J.T.K.
- Neue Suche nach: Sibbett, W.
- Neue Suche nach: Burns, D.
- Neue Suche nach: Crust, D.W.
- Neue Suche nach: Chang, J.T.K.
- Neue Suche nach: Sibbett, W.
In:
Electronics Letters
;
24
, 23
;
1439-1441
;
1988
- Aufsatz (Zeitschrift) / Print
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Titel:Active mode-locking of an external cavity GaInAsP laser incorporating a fibre-grating reflector
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Beteiligte:Burns, D. ( Autor:in ) / Crust, D.W. ( Autor:in ) / Chang, J.T.K. ( Autor:in ) / Sibbett, W. ( Autor:in )
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Erschienen in:Electronics Letters ; 24, 23 ; 1439-1441
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Verlag:
- Neue Suche nach: IET Digital Library Archive
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Erscheinungsdatum:10.11.1988
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Format / Umfang:3 pages
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:gallium arsenide , fibre optics , laser cavity resonators , gallium compounds , laser mode locking , mirrors , bandwidth limiting mirror , semiconductor junction lasers , III-V semiconductors , 1.53 micron , optical fibre grating , diffraction gratings , central emission wavelength , external cavity GaInAsP laser , indium compounds , semiconductor diode amplifier , wavelength selective mirror , mode-locked pulses , fibre-grating reflector , 10 ps , repetition rate , active mode locking
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Datenquelle:
Inhaltsverzeichnis – Band 24, Ausgabe 23
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