Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices (Englisch)
Freier Zugriff
- Neue Suche nach: Garduño-Nolasco, Edson
- Neue Suche nach: Carrington, Peter J.
- Neue Suche nach: Krier, Anthony
- Neue Suche nach: Missous, Mohamed
- Neue Suche nach: Garduño-Nolasco, Edson
- Neue Suche nach: Carrington, Peter J.
- Neue Suche nach: Krier, Anthony
- Neue Suche nach: Missous, Mohamed
In:
IET Optoelectronics
;
8
, 2
;
71-75
;
2014
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices
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Beteiligte:Garduño-Nolasco, Edson ( Autor:in ) / Carrington, Peter J. ( Autor:in ) / Krier, Anthony ( Autor:in ) / Missous, Mohamed ( Autor:in )
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Erschienen in:IET Optoelectronics ; 8, 2 ; 71-75
-
Verlag:
- Neue Suche nach: The Institution of Engineering and Technology
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Erscheinungsdatum:01.04.2014
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:bandfilling , short-circuit current density , voltage 0.70 V , open-circuit voltage , III-V semiconductors , optical properties , semiconductor epitaxial layers , photovoltaic cells , indium compounds , photovoltaic devices , indium arsenide-gallium arsenide quantum dots , gallium arsenide , solar cells , structural properties , voltage 0.73 V , molecular beam epitaxial growth , molecular beam epitaxy , wide band gap semiconductors , sun illumination , InAs−GaAs , QD layers , quantum optics , n dopant sheet densities , electric properties , short-circuit currents , QD array , electrical properties , semiconductor quantum dots
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Datenquelle:
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