λ = 8.3 µm GaAs/AlAs quantum cascade lasers incorporating InAs monolayers (Englisch)
- Neue Suche nach: Wilson, L.R.
- Neue Suche nach: Cockburn, J.W.
- Neue Suche nach: Carder, D.A.
- Neue Suche nach: Steer, M.J.
- Neue Suche nach: Hopkinson, M.
- Neue Suche nach: Chia, C.K.
- Neue Suche nach: Airey, R.
- Neue Suche nach: Hill, G.
- Neue Suche nach: Wilson, L.R.
- Neue Suche nach: Cockburn, J.W.
- Neue Suche nach: Carder, D.A.
- Neue Suche nach: Steer, M.J.
- Neue Suche nach: Hopkinson, M.
- Neue Suche nach: Chia, C.K.
- Neue Suche nach: Airey, R.
- Neue Suche nach: Hill, G.
In:
Electronics Letters
;
37
, 21
;
1292-1293
;
2001
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:λ = 8.3 µm GaAs/AlAs quantum cascade lasers incorporating InAs monolayers
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Beteiligte:Wilson, L.R. ( Autor:in ) / Cockburn, J.W. ( Autor:in ) / Carder, D.A. ( Autor:in ) / Steer, M.J. ( Autor:in ) / Hopkinson, M. ( Autor:in ) / Chia, C.K. ( Autor:in ) / Airey, R. ( Autor:in ) / Hill, G. ( Autor:in )
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Erschienen in:Electronics Letters ; 37, 21 ; 1292-1293
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Verlag:
- Neue Suche nach: The Institution of Engineering and Technology
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Erscheinungsdatum:11.10.2001
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Format / Umfang:2 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 37, Ausgabe 21
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