Effects of thermal annealing condition on N-incorporated ZnO films in FBAR devices (Englisch)
- Neue Suche nach: Zhang, R.
- Neue Suche nach: Lee, E.
- Neue Suche nach: Yoon, G.
- Neue Suche nach: Zhang, R.
- Neue Suche nach: Lee, E.
- Neue Suche nach: Yoon, G.
In:
Electronics Letters
;
46
, 9
;
605-606
;
2010
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Effects of thermal annealing condition on N-incorporated ZnO films in FBAR devices
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Beteiligte:
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Erschienen in:Electronics Letters ; 46, 9 ; 605-606
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Verlag:
- Neue Suche nach: The Institution of Engineering and Technology
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Erscheinungsdatum:29.04.2010
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Format / Umfang:2 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 46, Ausgabe 9
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