Analytical modelling of the current (I)–voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions (Englisch)
Freier Zugriff
- Neue Suche nach: Tripathi, Shweta
- Neue Suche nach: Jit, Satyabrata
- Neue Suche nach: Tripathi, Shweta
- Neue Suche nach: Jit, Satyabrata
In:
IET Circuits, Devices & Systems
;
7
, 1
;
42-50
;
2013
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Analytical modelling of the current (I)–voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions
-
Beteiligte:Tripathi, Shweta ( Autor:in ) / Jit, Satyabrata ( Autor:in )
-
Erschienen in:IET Circuits, Devices & Systems ; 7, 1 ; 42-50
-
Verlag:
- Neue Suche nach: The Institution of Engineering and Technology
-
Erscheinungsdatum:01.01.2013
-
Format / Umfang:9 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Schlagwörter:analytical modelling , non-analytic Gaussian doping function , photovoltaic effect , gallium arsenide , short-gate length effects , numerical analysis , Schottky gate–channel junction , Gaussian processes , semiconductor doping , Schottky gate field effect transistors , short-channel ion-implanted MESFET , current–voltage characteristics , III-V semiconductors , analytic Gaussian-like doping , channel doping , wavelength , wavelength 0.87 mum , sub-micron gate-length ion-implanted MESFET , ATLASTM device simulation software , I–V characteristics , ion implantation , semiconductor device models , electron–hole pairs , numerical simulation
-
Datenquelle:
Metadata by IET is licensed under CC BY 3.0
Inhaltsverzeichnis – Band 7, Ausgabe 1
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
1.1-V, 8-bit, 12 MS/s asynchronous reference-free successive-approximation-register analogue-todigital converter in 0.18 mu m CMOS with separated capacitor arraysHuang, G. / Lin, P. et al. | 2013
- 1
-
1.1-V, 8-bit, 12 MS/s asynchronous reference-free successive-approximation-register analogue-to-digital converter in 0.18 μm CMOS with separated capacitor arraysHuang, Guanzhong / Lin, Pingfen et al. | 2013
- 9
-
Performance characterisation of a microwave transistor for the maximum output power and the required noiseDemirel, Salih / Güneş, Filiz et al. | 2013
- 21
-
Low-component count BJT technology-based current-controlled tunable resistors and their applicationsArslanalp, Remzi / Yuce, Erkan / Tola, Abdullah T. et al. | 2013
- 31
-
A 0.38 V near/sub-VT digitally controlled low-dropout regulator with enhanced power supply noise rejection in 90 nm CMOS processKim, Yongtae / Li, Peng et al. | 2013
- 42
-
Analytical modelling of the current (I)–voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditionsTripathi, Shweta / Jit, Satyabrata et al. | 2013