1.3 µm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs (Englisch)
- Neue Suche nach: Hurm, V.
- Neue Suche nach: Benz, W.
- Neue Suche nach: Berroth, M.
- Neue Suche nach: Fink, T.
- Neue Suche nach: Fritzsche, D.
- Neue Suche nach: Haupt, M.
- Neue Suche nach: Hofmann, P.
- Neue Suche nach: Jakobus, T.
- Neue Suche nach: Ko¨hler, K.
- Neue Suche nach: Ludwig, M.
- Neue Suche nach: Mause, K.
- Neue Suche nach: Raynor, B.
- Neue Suche nach: Rosenzweig, J.
- Neue Suche nach: Hurm, V.
- Neue Suche nach: Benz, W.
- Neue Suche nach: Berroth, M.
- Neue Suche nach: Fink, T.
- Neue Suche nach: Fritzsche, D.
- Neue Suche nach: Haupt, M.
- Neue Suche nach: Hofmann, P.
- Neue Suche nach: Jakobus, T.
- Neue Suche nach: Ko¨hler, K.
- Neue Suche nach: Ludwig, M.
- Neue Suche nach: Mause, K.
- Neue Suche nach: Raynor, B.
- Neue Suche nach: Rosenzweig, J.
In:
Electronics Letters
;
31
, 1
;
67-68
;
1995
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:1.3 µm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
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Beteiligte:Hurm, V. ( Autor:in ) / Benz, W. ( Autor:in ) / Berroth, M. ( Autor:in ) / Fink, T. ( Autor:in ) / Fritzsche, D. ( Autor:in ) / Haupt, M. ( Autor:in ) / Hofmann, P. ( Autor:in ) / Jakobus, T. ( Autor:in ) / Ko¨hler, K. ( Autor:in ) / Ludwig, M. ( Autor:in )
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Erschienen in:Electronics Letters ; 31, 1 ; 67-68
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Verlag:
- Neue Suche nach: The Institution of Engineering and Technology
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Erscheinungsdatum:05.01.1995
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Format / Umfang:2 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 31, Ausgabe 1
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ERRATA| 1995