Titanium oxide vertical resistive random-access memory device (Englisch)
Freier Zugriff
- Neue Suche nach: Fryauf, David M.
- Neue Suche nach: Norris, Kate J.
- Neue Suche nach: Zhang, Junce
- Neue Suche nach: Wang, Shih-Yuan
- Neue Suche nach: Kobayashi, Nobuhiko P.
- Neue Suche nach: Fryauf, David M.
- Neue Suche nach: Norris, Kate J.
- Neue Suche nach: Zhang, Junce
- Neue Suche nach: Wang, Shih-Yuan
- Neue Suche nach: Kobayashi, Nobuhiko P.
In:
Micro & Nano Letters
;
10
, 7
;
321-323
;
2015
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Titanium oxide vertical resistive random-access memory device
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Beteiligte:Fryauf, David M. ( Autor:in ) / Norris, Kate J. ( Autor:in ) / Zhang, Junce ( Autor:in ) / Wang, Shih-Yuan ( Autor:in ) / Kobayashi, Nobuhiko P. ( Autor:in )
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Erschienen in:Micro & Nano Letters ; 10, 7 ; 321-323
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Verlag:
- Neue Suche nach: The Institution of Engineering and Technology
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Erscheinungsdatum:01.07.2015
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Format / Umfang:3 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:scanning electron microscopy , cross-sectional scanning electron microscopy , active switching cross-sectional area , vertical three-dimensional structure , photolithography , titanium compounds , semiconductor materials , current-voltage characteristics , dielectric layers , resistive RAM , vacuum deposition , atomic layer deposition , transmission electron microscopy , electrical characteristics , electrical resistivity , vertical resistive random-access memory switching devices , electron-beam evaporation , electrodes , metal-semiconductor-metal structures , platinum , Pt-TiO2-Pt , electron beam deposition , nanosized devices , structural integrity
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Datenquelle:
Metadata by IET is licensed under CC BY 3.0
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