Improved IIP3 double-pole double-throw switch with body and gate floated multi-stack resonator in 65 nm CMOS for WiGig applications (Englisch)
Freier Zugriff
- Neue Suche nach: Kim, J.-S.
- Neue Suche nach: Shin, G.-S.
- Neue Suche nach: Oh, H.-M.
- Neue Suche nach: Choi, S.
- Neue Suche nach: Byeon, C.W.
- Neue Suche nach: Son, J.
- Neue Suche nach: Lee, J.H.
- Neue Suche nach: Kim, C.-Y.
- Neue Suche nach: Kim, J.-S.
- Neue Suche nach: Shin, G.-S.
- Neue Suche nach: Oh, H.-M.
- Neue Suche nach: Choi, S.
- Neue Suche nach: Byeon, C.W.
- Neue Suche nach: Son, J.
- Neue Suche nach: Lee, J.H.
- Neue Suche nach: Kim, C.-Y.
In:
Electronics Letters
;
52
, 8
;
665-667
;
2016
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Improved IIP3 double-pole double-throw switch with body and gate floated multi-stack resonator in 65 nm CMOS for WiGig applications
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Beteiligte:Kim, J.-S. ( Autor:in ) / Shin, G.-S. ( Autor:in ) / Oh, H.-M. ( Autor:in ) / Choi, S. ( Autor:in ) / Byeon, C.W. ( Autor:in ) / Son, J. ( Autor:in ) / Lee, J.H. ( Autor:in ) / Kim, C.-Y. ( Autor:in )
-
Erschienen in:Electronics Letters ; 52, 8 ; 665-667
-
Verlag:
- Neue Suche nach: The Institution of Engineering and Technology
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Erscheinungsdatum:14.04.2016
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Format / Umfang:3 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:WiGig application , switches , millimetre wave integrated circuits , resonant inductor technique , CMOS integrated circuits , improved IIP3 double-pole double-throw switch , gate floated multistack resonator , DPDT switch , resistive body-floating technique , body floated multistack resonator , frequency 49 GHz to 68 GHz , millimetre wave resonators , size 65 nm , TSMC CMOS technology , inductors
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Datenquelle:
Metadata by IET is licensed under CC BY 3.0
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