n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy (Englisch)
Paper
- Neue Suche nach: Sang-Heon Han
- Neue Suche nach: Akhil Mauze
- Neue Suche nach: Elaheh Ahmadi
- Neue Suche nach: Tom Mates
- Neue Suche nach: Yuichi Oshima
- Neue Suche nach: James S Speck
- Neue Suche nach: Sang-Heon Han
- Neue Suche nach: Akhil Mauze
- Neue Suche nach: Elaheh Ahmadi
- Neue Suche nach: Tom Mates
- Neue Suche nach: Yuichi Oshima
- Neue Suche nach: James S Speck
In:
Semiconductor Science and Technology
;
33
, 4
;
045001
;
2018
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy
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Untertitel:Paper
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Weitere Titelangaben:n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy
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Beteiligte:Sang-Heon Han ( Autor:in ) / Akhil Mauze ( Autor:in ) / Elaheh Ahmadi ( Autor:in ) / Tom Mates ( Autor:in ) / Yuichi Oshima ( Autor:in ) / James S Speck ( Autor:in )
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Erschienen in:Semiconductor Science and Technology ; 33, 4 ; 045001
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Verlag:
- Neue Suche nach: Institute of Physics
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Erscheinungsdatum:01.04.2018
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 33, Ausgabe 4
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n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxySang-Heon Han / Akhil Mauze / Elaheh Ahmadi / Tom Mates / Yuichi Oshima / James S Speck et al. | 2018
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