Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts (Englisch)
Paper
- Neue Suche nach: D E Guzmán-Caballero
- Neue Suche nach: M A Quevedo-López
- Neue Suche nach: W De la Cruz
- Neue Suche nach: R Ramírez-Bon
- Neue Suche nach: D E Guzmán-Caballero
- Neue Suche nach: M A Quevedo-López
- Neue Suche nach: W De la Cruz
- Neue Suche nach: R Ramírez-Bon
In:
Semiconductor Science and Technology
;
33
, 3
;
035010
;
2018
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts
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Untertitel:Paper
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Weitere Titelangaben:Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts
-
Beteiligte:D E Guzmán-Caballero ( Autor:in ) / M A Quevedo-López ( Autor:in ) / W De la Cruz ( Autor:in ) / R Ramírez-Bon ( Autor:in )
-
Erschienen in:Semiconductor Science and Technology ; 33, 3 ; 035010
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Verlag:
- Neue Suche nach: Institute of Physics
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Erscheinungsdatum:01.03.2018
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Format / Umfang:8 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 33, Ausgabe 3
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