Review of SiC crystal growth technology (Englisch)
Topical Review
- Neue Suche nach: Peter J Wellmann
- Neue Suche nach: Peter J Wellmann
In:
Semiconductor Science and Technology
;
33
, 10
;
103001
;
2018
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Review of SiC crystal growth technology
-
Untertitel:Topical Review
-
Weitere Titelangaben:Review of SiC crystal growth technology
-
Beteiligte:Peter J Wellmann ( Autor:in )
-
Erschienen in:Semiconductor Science and Technology ; 33, 10 ; 103001
-
Verlag:
- Neue Suche nach: Institute of Physics
-
Erscheinungsdatum:01.10.2018
-
Format / Umfang:21 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 33, Ausgabe 10
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Review of SiC crystal growth technologyPeter J Wellmann et al. | 2018
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