Research progress of Ge on insulator grown by rapid melting growth Project supported in part by the National Key Research and Development Program of China (No. 2017YFA0206404) and the National Natural Science Foundation of China (Nos. 61435013, 61534005, 61534004, 61604146). (Englisch)
Paper
- Neue Suche nach: Zhi Liu
- Neue Suche nach: Juanjuan Wen
- Neue Suche nach: Chuanbo Li
- Neue Suche nach: Chunlai Xue
- Neue Suche nach: Buwen Cheng
- Neue Suche nach: Zhi Liu
- Neue Suche nach: Juanjuan Wen
- Neue Suche nach: Chuanbo Li
- Neue Suche nach: Chunlai Xue
- Neue Suche nach: Buwen Cheng
In:
Journal of Semiconductors
;
39
, 6
;
061005
;
2018
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Research progress of Ge on insulator grown by rapid melting growth Project supported in part by the National Key Research and Development Program of China (No. 2017YFA0206404) and the National Natural Science Foundation of China (Nos. 61435013, 61534005, 61534004, 61604146).
-
Untertitel:Paper
-
Weitere Titelangaben:Research progress of Ge on insulator grown by rapid melting growth
-
Beteiligte:Zhi Liu ( Autor:in ) / Juanjuan Wen ( Autor:in ) / Chuanbo Li ( Autor:in ) / Chunlai Xue ( Autor:in ) / Buwen Cheng ( Autor:in )
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Erschienen in:Journal of Semiconductors ; 39, 6 ; 061005
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Verlag:
- Neue Suche nach: Institute of Physics
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Erscheinungsdatum:01.06.2018
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Format / Umfang:10 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 39, Ausgabe 6
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