Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors (Englisch)
Invited Review
- Neue Suche nach: Jang Yeon Kwon
- Neue Suche nach: Jae Kyeong Jeong
- Neue Suche nach: Jang Yeon Kwon
- Neue Suche nach: Jae Kyeong Jeong
In:
Semiconductor Science and Technology
;
30
, 2
;
024002
;
2015
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors
-
Untertitel:Invited Review
-
Weitere Titelangaben:Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors
-
Beteiligte:Jang Yeon Kwon ( Autor:in ) / Jae Kyeong Jeong ( Autor:in )
-
Erschienen in:Semiconductor Science and Technology ; 30, 2 ; 024002
-
Verlag:
- Neue Suche nach: Institute of Physics
-
Erscheinungsdatum:01.02.2015
-
Format / Umfang:16 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 30, Ausgabe 2
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 020301
-
Semiconductor functional oxidesSaskia F Fischer / Marius Grundmann et al. | 2015
- 024001
-
Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applicationsOliver Bierwagen et al. | 2015
- 024002
-
Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistorsJang Yeon Kwon / Jae Kyeong Jeong et al. | 2015
- 024003
-
From high-Tc superconductors to highly correlated Mott insulators—25 years of pulsed laser deposition of functional oxides in LeipzigMichael Lorenz / Holger Hochmuth / Max Kneiß / Michael Bonholzer / Marcus Jenderka / Marius Grundmann et al. | 2015
- 024004
-
Fano resonances in photoconductivity spectra of hydrogen donors in ZnO and rutileE V Lavrov / F Herklotz / J Weber et al. | 2015
- 024005
-
Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereonH von Wenckstern / D Splith / M Purfürst / Z Zhang / Ch Kranert / S Müller / M Lorenz / M Grundmann et al. | 2015
- 024006
-
Temperature-dependent thermal conductivity in Mg-doped and undoped β-Ga2O3 bulk-crystalsM Handwerg / R Mitdank / Z Galazka / S F Fischer et al. | 2015
- 024007
-
Towards environmental friendly solution-based ZTO/AlOx TFTsRita Branquinho / Daniela Salgueiro / Ana Santa / Asal Kiazadeh / Pedro Barquinha / Luís Pereira / Rodrigo Martins / Elvira Fortunato et al. | 2015
- 024008
-
Effect of Schottky gate type and channel defects on the stability of transparent ZnO MESFETsS Elzwawi / A Hyland / M Lynam / J G Partridge / D G McCulloch / M W Allen et al. | 2015
- 024009
-
On the coexistence of localized and extended acceptor states in high gap semiconductorsO F Schirmer et al. | 2015
- 024010
-
Bethe–Salpeter calculation of optical-absorption spectra of In2O3 and Ga2O3Joel B Varley / André Schleife et al. | 2015
- 024011
-
Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnOE Korhonen / V Prozheeva / F Tuomisto / O Bierwagen / J S Speck / M E White / Z Galazka / H Liu / N Izyumskaya / V Avrutin et al. | 2015
- 024012
-
Application of atomic layer deposited Al2O3 as charge injection layer for high-permittivity dielectricsStephan Hillmann / Karsten Rachut / Thorsten J M Bayer / Shunyi Li / Andreas Klein et al. | 2015
- 024013
-
Effect of indium as a surfactant in (Ga1−xInx)2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxyM Baldini / M Albrecht / D Gogova / R Schewski / G Wagner et al. | 2015